JPH0572052A - Method for measuring thin-film treating temperature - Google Patents

Abstract

PURPOSE:To obtain a method for measuring thin-film treating temperature, which can accurately and readily measure the post-treatment temperature after the formation of a metal oxide thin film with thickness of 50nm or more wherein the effects of especially the surface roughness of a substrate, combination and corrosion of the surface of the film and the like are suppressed without contaminating vacuum atmosphere. CONSTITUTION:This method is applied in temperature measurement when a resistor film is treated in a manufacturing process. A vapor deposition film having the composition of, e.g. Cr-Si-O is formed with the thickness of 0.2mum by a sputtering vapor deposition method using a Cr-SiO2 target at 60 deg.C in order to obtain a metal oxide thin film. The resistivity of the formed metal oxide film is measured before and after the heating treatment (steps 202 and 204). The temperature in heating treatment is obtained by using the relationship of a resistivity/highest-temperature curve which is calibrated beforehand (step 205).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of measuring a thin film processing temperature, and particularly to a thin film which can be easily and highly accurately measured in temperature measurement of a metal oxide thin film used for electronic parts and the like. The present invention relates to a technique effectively applied to a method for measuring a processing temperature.

[0002]

2. Description of the Related Art As a conventional method for measuring a thin film processing temperature, for example, in the case of measuring a substrate processing temperature in a vacuum vapor deposition apparatus having an automatic transfer mechanism, a thermocouple or a radiation thermometer cannot be used, and a heat label can also be used. These temperature measuring methods have not been practical because the degree of vacuum in the vacuum chamber is lowered and the temperature can be measured only intermittently.

Therefore, as described in JP-A-59-79821, Au, Pt, Ni, Fe, Pd,
A temperature measuring method is disclosed in which a single metal such as Cu or Ag is used and the resistivity of a vacuum deposited film of the single metal is changed by heating.

[0004]

However, in the above-mentioned prior art, since a simple metal having a low resistivity is used, the film thickness is 5 to 50 nm because of the ease of resistance measurement.
Is appropriate. However, with such a film thickness, there is a problem that accurate measurement cannot be performed because the surface roughness of the base material forming the film and the effect of chemicals and corrosion due to gas on the film surface appear strongly.

Therefore, the present inventor has noticed that the resistivity can be increased by using a metal oxide as a simple substance metal, and the processing temperature is measured by the change in the resistivity of the metal oxide thin film due to the film formation of this metal oxide. I found that is possible.

That is, an object of the present invention is to form a metal oxide thin film, particularly a metal oxide thin film having a thickness of 50 nm or more, which can suppress the effects of the surface roughness of the substrate, the compounding and corrosion of the film surface. It is an object of the present invention to provide a method for measuring a thin film processing temperature, which can accurately and easily measure a post processing temperature without polluting a vacuum atmosphere.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0008]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

That is, the method for measuring the thin film processing temperature of the present invention is a method for measuring the thin film processing temperature in heat treatment, in which a single metal and oxygen deposited at a temperature lower than the temperature to be measured during the heat treatment, or The treatment temperature of a metal oxide thin film composed of a plurality of metals and oxygen is measured from the change in resistivity of the metal oxide thin film.

In this case, the metal oxide is replaced by Au, C
A metal oxide composed of a simple metal of r, Ta, Ni, or Ru and oxygen, or a metal oxide composed of this simple metal, Si, and oxygen.

Further, the change in resistivity of the metal oxide thin film is measured at arbitrary plural positions.

[0012]

According to the method for measuring the thin film processing temperature described above, metal oxides such as Au, Cr, Ta, Ni or Ru are used.
The treatment temperature during the heat treatment can be measured by measuring the change in resistivity of the metal oxide thin film composed of the elemental metal and oxygen or the elemental metal and Si and oxygen. That is, the resistivity of a metal oxide thin film having a large resistivity formed on a desired substrate at a temperature lower than the temperature to be measured is measured before and after the treatment, and the resistivity calibrated in advance from the change in the resistivity-maximum temperature curve The relationship can be used to determine the temperature during processing. As a result, the processing temperature can be easily and easily measured without polluting the vacuum atmosphere.

Further, the temperature distribution during the heat treatment can be obtained by measuring the change in resistivity at a plurality of arbitrary positions on the metal oxide thin film. As a result, it becomes possible to accurately measure the temperature unevenness of the processing temperature and the maximum temperature.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a perspective view showing a substrate used in an embodiment of the thin film processing temperature measuring method of the present invention, and FIG. 2 is a flow chart showing the processing temperature measuring procedure of the substrate used in this embodiment. FIG. 3 is an explanatory diagram showing a change in sheet resistance value due to heating of a thin film formed by a sputter deposition method at 60 ° C. in a vapor deposition film having a composition of Cr—Si—O in the present embodiment, and FIG. 3 is an explanatory view showing a temperature distribution when measured at arbitrary plural positions. FIG.

First, the structure of the substrate used in this embodiment will be described with reference to FIG.

The substrate of the present embodiment is applied to, for example, temperature measurement at the time of resistance film processing in the manufacturing process, and glass,
In order to obtain the metal oxide thin film 2 on the insulating base 1 made of an insulating material such as ceramic or plastic, a vapor deposition film having a composition of Cr-Si-O, for example, is used as a Cr-SiO ₂ target at 60 ° C. It is used to form a film with a thickness of 0.2 μm by the sputter deposition method.

Next, the operation of the present embodiment will be described with reference to FIG.

First, the metal oxide thin film 2 is formed on the substrate 1 at 60 ° C., which is lower than the temperature to be measured, by the sputter deposition method (step 201). After the film formation, that is, before the heat treatment, the sheet resistance value of the metal oxide thin film 2 is measured (step 202).

Further, after the heat treatment (step 203),
The sheet resistance value of the metal oxide thin film 2 is measured again (step 204). Then, the processing temperature during the heat treatment is obtained from the rate of change of the sheet resistance value (step 205).

In this case, the resistivity can be obtained by measuring the sheet resistance value and film thickness of the film. In the case of a metal film or a metal oxide film, the change in film thickness before and after heating at the temperature to be measured does not occur. Since it is very small, it is possible to obtain the maximum temperature to be measured only by measuring the sheet resistance value of the film.

That is, the treatment temperature (T) of the formed metal oxide thin film 2 is the rate of change ((R-R ₀ )) between the initial value (R ₀ ) of the sheet resistance and the temperature after heating (R) with respect to the heating temperature. / R
It can be obtained from the relationship of ₀ ).

For example, the sheet resistance before treatment is 200
When the sheet resistance after treatment is 140Ω, the rate of change = (140−200) / 200 × 100 is −30%. Therefore, the relationship between the previously calibrated resistivity and the maximum temperature curve shown in FIG. It can be determined that the treatment temperature is 300 ° C.

Therefore, according to the measurement of the processing temperature of the substrate used in this embodiment, the resistivity of the metal oxide thin film 2 formed at a temperature lower than the temperature to be measured during the heat treatment is measured before and after the heat treatment. By doing so, it is possible to obtain the temperature during the heat treatment by using the relationship of the resistivity-maximum temperature curve that has been calibrated in advance from the change in the resistivity before and after the treatment, without the need to form a stylus or electrodes as in the past. You can

Further, in this case, the change in resistivity of the metal oxide thin film 2 is divided into meshes and measured at a plurality of positions to obtain a temperature distribution during the heat treatment as shown in FIG. 4, for example. Therefore, it becomes possible to accurately determine the temperature unevenness and the maximum temperature.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, regarding the measurement of the treatment temperature in this embodiment, the case where the metal oxide thin film 2 is a vapor deposition film having a composition of Cr--Si--O has been described, but the present invention is not limited to the above embodiment. Not Au, Ta,
The present invention is widely applicable to metal oxides composed of Ni or Ru simple metals and O, or these simple metals and Si and O, and it is particularly preferable that the metal oxide thin film is a metal having a large resistivity. ..

As the substrate 1, a conductor substrate whose surface has been subjected to an insulation treatment, for example, a Si substrate, is formed of SiO ₂ or SiN.
It is also applicable to a substrate treated with ₂ .

Further, regarding the film thickness of the metal oxide thin film 2, a single metal such as Au, Cr, Ta, Ni and Ru and S are used.
The metal oxide thin film composed of i and O has a high specific resistance, and the film thickness is 0.1 to 1 μm when the sheet resistance is measured with a stylus.
In addition, it is appropriate to set the film thickness to 0.01 to 1 μm for resistance measurement by electrode formation, but the present embodiment is not necessarily limited to this range.

In the above description, the case where the invention made by the present inventor is mainly applied to the measurement of the processing temperature of the metal oxide thin film 2 used in the electronic parts and the like which is the field of application thereof has been described, but the invention is not limited to this. However, it is not limited to this, and is widely applied to other thin film processing temperature measurement methods, particularly those for manufacturing semiconductor integrated circuit devices such as bake furnaces or sputtering devices, where the transport system is complicated and requires processing in a vacuum state. It is possible.

[0030]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.

That is, the treatment temperature of a metal oxide thin film composed of a single metal and oxygen or a plurality of metals and oxygen formed at a temperature lower than the measured temperature at the time of heat treatment is By measuring from the change in resistivity,
Since the processing temperature at the time of heat processing can be obtained from the resistivity-maximum temperature curve that has been calibrated in advance from the change in resistivity, it is possible to easily and easily measure the processing temperature without polluting the vacuum atmosphere. Become.

Further, since the temperature distribution during the heat treatment can be obtained by measuring the resistivity change of the metal oxide thin film at arbitrary plural positions, the temperature unevenness of the treatment temperature and the maximum temperature can be accurately measured. It is possible to measure with high accuracy.

As a result, it becomes possible to measure the temperature of the metal oxide thin film used for electronic parts and the like during processing, and in particular, the effects of the surface roughness of the substrate, the compounding and corrosion of the film surface are suppressed, and the measurement substrate is not always required. Since no electrode is required, a thin film processing temperature measuring method can be obtained which enables simple and easy temperature measurement.

[Brief description of drawings]

FIG. 1 is a perspective view showing a substrate used in an embodiment of a thin film processing temperature measuring method of the present invention.

FIG. 2 is a flowchart showing a procedure for measuring a processing temperature of a substrate used in this embodiment.

FIG. 3 is an explanatory diagram showing a change in sheet resistance value due to heating of a thin film formed by a sputter deposition method at 60 ° C. in a vapor deposition film having a composition of Cr—Si—O in this example.

FIG. 4 is an explanatory diagram showing a temperature distribution when measured at arbitrary plural positions in the present embodiment.

[Explanation of symbols]

 1 substrate 2 metal oxide thin film

Claims (3)

[Claims] 1. A method for measuring a thin film processing temperature in a heat treatment, comprising a single metal and oxygen formed at a temperature lower than a temperature to be measured during the heat treatment, or a metal composed of a plurality of metals and oxygen. A method for measuring a thin film processing temperature, which comprises measuring a processing temperature of an oxide thin film from a change in resistivity of the metal oxide thin film. 2. The metal oxide is Au, Cr, Ta,
The thin film processing temperature measuring method according to claim 1, wherein a metal oxide composed of a single metal of Ni or Ru and oxygen, or a metal oxide of the single metal and Si and oxygen. 3. The method for measuring a thin film processing temperature according to claim 1, wherein the change in the resistivity of the metal oxide thin film is measured at arbitrary plural positions.