JPH0570253A - Joining method for ceramics with each other and thermal joining insert material - Google Patents

Joining method for ceramics with each other and thermal joining insert material

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Publication number
JPH0570253A
JPH0570253A JP3415792A JP3415792A JPH0570253A JP H0570253 A JPH0570253 A JP H0570253A JP 3415792 A JP3415792 A JP 3415792A JP 3415792 A JP3415792 A JP 3415792A JP H0570253 A JPH0570253 A JP H0570253A
Authority
JP
Japan
Prior art keywords
heating
ceramics
joining
joined
induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3415792A
Other languages
Japanese (ja)
Inventor
Koji Okuda
浩司 奥田
Tokuzo Nishi
徳三 西
Hiroshi Takai
博史 高井
Hisakiyo Hoshino
久清 星野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daihen Corp
Original Assignee
Daihen Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daihen Corp filed Critical Daihen Corp
Priority to JP3415792A priority Critical patent/JPH0570253A/en
Publication of JPH0570253A publication Critical patent/JPH0570253A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To effectively, firmly join ceramics with each other in a short time by energizing an induction heating coil to induction-heat heating ceramics interposed between low conductive ceramics members abutted on each other. CONSTITUTION:Between ceramics members to be jointed 1a, 1b consisting of low conductive SiC, etc., are disposed heating ceramics 2 made of high conductive SiC, etc., through a joining agent to abut them on each other. At this time, the abutted surface is preferably cleaned by specular polishing. The constituted body to be jointed is fixed by applying pressure P of about 100 MPa in the abutted direction. Next, at induction heating coil 4 disposed near the outer circumference of the abutted part is energized by a high frequency power unit 5, causing the heating ceramics 2 to be induction-heated. On the heating, the abutted part is heated to the joining formed temp. to join the ceramics members with each other.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、導電率の小さいセラミ
ックス部材同士を接合する際に、突合せ部を誘導加熱し
て接合する方法及び加熱接合用インサ−ト材に関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for inducing and heating a butt portion when joining ceramic members having low electric conductivity, and an insert material for heating and joining.

【0002】[0002]

【従来の技術】誘導加熱、例えば高周波加熱によりセラ
ミックス部材同士またはセラミックス部材と金属部材と
を接合する場合、これらの部材間に適宜の接合剤を介在
させ、この突合せ部の外周に円筒状に巻回した誘導加熱
用コイルに通電する。この際、導電性の大きなセラミッ
クス部材または金属部材に対しては、部材自体に誘導電
流が流れ、このときの誘導加熱により突合せ部を加熱し
て、セラミックスの接合が行われる。また、高温で導電
性を有するセラミックス部材または金属部材に対して
は、部材の突合せ面に金属等の導電性材料をコ−ティン
グし、このコ−ティングを誘導加熱して、これに伴って
導電性が高められたセラミックス部材にも誘導電流が流
れ、両者の誘導加熱により突合せ部を加熱して、セラミ
ックスを接合する方法が提案されている(特開61−3
6180号)。また、絶縁性セラミックス部材同士を接
合する場合、導電性接合剤を介在させ、この接合剤を誘
導加熱させる方法も考えられる。
2. Description of the Related Art When ceramic members are joined together or ceramic members and metal members are joined together by induction heating, for example, high frequency heating, a suitable bonding agent is interposed between these members and the outer periphery of the butted portion is wound in a cylindrical shape. Energize the rotated induction heating coil. At this time, an induction current flows through the ceramic member or metal member having high conductivity, and the butt portion is heated by induction heating at this time to join the ceramics. Further, for a ceramic member or a metal member having conductivity at high temperature, a conductive material such as metal is coated on the abutting surface of the member, and the coating is induction-heated so that the conductive material is conductive. A method has been proposed in which an induced current also flows through a ceramic member having improved properties, and the butt portion is heated by induction heating of both members to join the ceramics (JP-A-61-3).
6180). Further, when joining the insulating ceramic members together, a method of interposing a conductive joining agent and inductively heating the joining agent is also conceivable.

【0003】[0003]

【発明が解決しようとする問題点】しかしながら、従来
の接合においては、Si3 4 ,Al2 3 などの高温
においても絶縁性であるセラミックス部材同士を絶縁性
の接合剤を用いて接合する場合には適用できないという
問題がある。また、ZrO2 などの高温で導電性を有す
るセラミックスを接合する場合や導電性の接合剤を用い
て接合する場合、導電性材料をコ−ティングする手段が
講じられているが、一般的にコ−ティングの厚さが非常
に小さいために、この部分での誘導加熱だけでは、体積
の圧倒的に大きい被接合部材を効果的に高温まで加熱さ
せることが困難である。すなわち、接合に長時間を要
し、また大きな電力を必要とし、さらに被接合部材の大
きさが小さいものに限られるという問題がある。
However, in the conventional joining, ceramic members such as Si 3 N 4 and Al 2 O 3 which are insulative even at a high temperature are joined together by using an insulative joining agent. There is a problem that it cannot be applied in some cases. Further, when joining ceramics having conductivity at a high temperature such as ZrO 2 or joining using a conductive bonding agent, a means for coating a conductive material has been taken, but generally, -Because the thickness of the coating is very small, it is difficult to effectively heat the members to be welded having an overwhelmingly large volume to a high temperature only by induction heating in this portion. That is, there is a problem that the joining requires a long time, a large amount of electric power is required, and the size of the member to be joined is small.

【0004】[0004]

【問題点を解決するための手段】本発明は、上記の問題
点を解決するために、請求項1においては、被接合セラ
ミックス部材同士間に、一部または全部が被接合セラミ
ックス部材よりも大きい導電率を有する加熱用セラミッ
クスを介在させ、被接合セラミックス部材を突合せて被
接合構成体を構成し、被接合構成体を突合せ方向に加圧
して突合せ部の近傍に設けた誘導加熱用コイルに通電す
ることにより、主に加熱用セラミックスを誘導加熱さ
せ、誘導加熱により突合せ部を接合形成温度まで加熱し
て接合することを特徴としている。また、請求項2にお
いては、被接合セラミックス部材同士間に接合剤を介し
て、一部または全部が被接合セラミックス部材よりも大
きい導電率を有する加熱用セラミックスを介在させ、被
接合セラミックス部材を突合せて被接合構成体を構成
し、突合せ部の近傍に設けた誘導加熱用コイルに通電す
ることにより、主に加熱用セラミックスまたは加熱用セ
ラミックス及び接合剤を誘導加熱させ、誘導加熱により
突合せ部を接合形成温度まで加熱して接合することを特
徴としている。さらに、請求項3においては、上記の誘
導加熱による本加熱を開始する前から終了する後まで、
補助加熱手段により被接合構成体の一部または全部を、
接合形成温度よりも低い温度まで加熱することを特徴と
している。また、請求項4においては、被接合セラミッ
クス部材間に介在させる加熱接合用インサ−ト材であっ
て、上記の加熱用セラミックスの突合せ面に接合剤層を
形成して一体化したことを特徴としている。
According to the present invention, in order to solve the above-mentioned problems, in Claim 1, a part or all of the members to be joined are larger than the members to be joined. Conducting heating ceramics having conductivity to butt the ceramic members to be joined together to form a structure to be joined, pressurize the structure to be joined in the butt direction, and energize the induction heating coil provided near the butt portion. By doing so, the heating ceramics is mainly induction-heated, and the butt portion is heated to the bonding formation temperature by the induction heating to bond. Further, in claim 2, the ceramics for heating, which are partially or wholly larger in electrical conductivity than the ceramics to be joined, are interposed between the ceramics to be joined, and the ceramics to be joined are butted. By constructing a structure to be joined and energizing the induction heating coil provided in the vicinity of the butt portion, mainly the heating ceramics or the heating ceramics and the bonding agent are induction-heated, and the butt portion is joined by induction heating. It is characterized by heating to the forming temperature and joining. Further, in claim 3, from before the main heating by the induction heating is started to after the main heating is finished,
Part or all of the structure to be joined by the auxiliary heating means,
It is characterized by heating to a temperature lower than the junction formation temperature. According to a fourth aspect of the present invention, there is provided an insert material for heating and joining which is interposed between ceramic members to be joined, wherein a joining agent layer is formed on a butting surface of the heating ceramics and integrated. There is.

【0005】[0005]

【作用】以上のような方法及び加熱接合用インサ−ト材
とすることにより、被接合セラミックス部材間に介在し
た加熱用セラミックスを主に誘導加熱して、その突合せ
部を集中的に加熱させることができるので、導電率が小
さいセラミックス、特に絶縁性セラミックスを接合する
場合に、本発明が最大限に発揮される。
By using the above-described method and the insert material for heat bonding, the heating ceramics interposed between the ceramic members to be bonded are mainly induction-heated and the butt portions thereof are intensively heated. Therefore, the present invention can be maximally exhibited when joining ceramics having a low electric conductivity, particularly insulating ceramics.

【0006】[0006]

【実施例】実施例1 図1は本発明の接合方法を示す第1の実施例の概略構成
図であって、接合剤を用いることなく低導電性セラミッ
クス同士を接合する場合を示している。まず、導電率が
10-2[Ω・cm]-1である丸パイプ状の低導電性SiC
セラミックス(φ12×φ5×50)の被接合部材1
a,1b間に、導電率が約102 [Ω・cm]-1であるリ
ング状の高導電性SiCセラミックス製の加熱用セラミ
ックス2(φ12×φ5×5)を配設して突合せる。こ
の際、被接合部材及び加熱用セラミックスの突合せ面
は、予め鏡面研磨された清浄な面にしておく。つぎに、
この被接合構成体を図示しない加圧装置により、突合せ
方向に約100MPaの圧力Pを加えて固定する。さら
に、上記構成体の突合せ部を主に加熱させるために、こ
の突合せ部の外周に適宜の長さの円形コイル状に巻回し
た水冷の誘導加熱用コイル4を配設し、コイル4の両端
に高周波電源装置5を接続する。このような構成におい
て、接合雰囲気を真空とし、高周波電源装置5によりコ
イル4に50KHz の高周波電流を通じ、加熱用セラミッ
クス2を誘導加熱させ、その熱伝導により被接合部材1
a,1bの温度が上昇すると、その抵抗が減少し、この
部分にも誘導電流が流れるようになり、これら全ての発
熱が相まって、突合せ部全体を加熱させる。この場合に
おいては、加熱用セラミックス2の発熱が最も大きいた
めに、突合せ部を中心とした効果的な加熱ができる。突
合せ部の温度が約1900℃になるように、放射温度計
からの信号により投入電力を自動的に調整した。約19
00℃で1時間保持した後、室温まで冷却して接合を完
了した。この接合体の気密性をHeリ−クディテクタ−
により評価したところ、検出限界以下の高気密性を示
し、また切断して接合部組織を観察した結果、良好な接
合が得られることがわかった。
EXAMPLE 1 FIG. 1 is a schematic constitutional view of a first example showing a joining method of the present invention, showing a case where low-conductivity ceramics are joined together without using a joining agent. First, a round pipe-shaped low-conductivity SiC having an electric conductivity of 10 -2 [Ω · cm] -1.
Ceramic (φ12 × φ5 × 50) bonded member 1
A heating ceramics 2 (φ12 × φ5 × 5) made of a ring-shaped high-conductivity SiC ceramics having an electric conductivity of about 10 2 [Ω · cm] −1 is disposed between a and 1b and abutted. At this time, the abutting surfaces of the members to be joined and the heating ceramics should be mirror-polished and clean surfaces in advance. Next,
The structure to be joined is fixed by applying a pressure P of about 100 MPa in the butt direction by a pressure device (not shown). Further, in order to mainly heat the abutting portion of the above-mentioned structure, a water-cooled induction heating coil 4 wound in a circular coil shape of an appropriate length is arranged on the outer circumference of the abutting portion, and both ends of the coil 4 are arranged. The high frequency power supply device 5 is connected to. In such a structure, the joining atmosphere is made vacuum, and the high-frequency power supply device 5 causes a high-frequency current of 50 KHz to pass through the coil 4 to induction-heat the heating ceramics 2, and the heat conduction of the induction heats the member 1 to be joined.
When the temperatures of a and 1b rise, their resistance decreases, and an induced current also flows in this portion, and all of these heat generations combine to heat the entire butt portion. In this case, since the heating ceramics 2 generate the largest amount of heat, effective heating centering on the butted portion can be performed. The input power was automatically adjusted by the signal from the radiation thermometer so that the temperature at the butt section was about 1900 ° C. About 19
After holding at 00 ° C. for 1 hour, it was cooled to room temperature to complete the joining. The airtightness of this bonded body is determined by the He leak detector.
As a result of the evaluation, it was shown that the airtightness was below the detection limit, and the joint structure was observed after cutting to find that good joining was obtained.

【0007】実施例2 図2は本発明の接合方法を示す第2の実施例の概略構成
図であって、導電性接合剤を用いて絶縁性セラミックス
同士を接合する場合を示している。まず、導電率が10
-13 [Ω・cm]-1以下である丸パイプ状のSi3 4
ラミックス(φ20×φ15×100)の被接合部材1
a,1b間に、導電率が約102 [Ω・cm]-1以下であ
るリング状のTiN含有Si3 4セラミックス製の加
熱用セラミックス2(φ20×φ15×5)の両突合せ
面に、Ti系活性金属ろう剤の接合剤3a,3b(20
0μm )を設けて配設する。つぎに、実施例1と同様
に、この被接合構成体に図示しない加圧装置により、突
合せ方向に適宜の圧力Pを加えて固定し、さらに上記構
成体の突合せ部の外周に誘導加熱用コイル4を配設し、
コイル4の両端に高周波電源装置5を接続する。このよ
うな構成において、接合雰囲気を真空とし、上記構成体
を中心軸の回りに回転させながら、高周波電源装置5に
よりコイル4に50KHz の高周波電流を通じ、加熱用セ
ラミックス2及び接合剤3a,3bを誘導加熱させ、そ
の発生熱により突合せ部及びその近傍を加熱させた。突
合せ部の温度が約900℃になるように、放射温度計に
よりモニターしながら投入電力を調整した。約900℃
で5分間保持した後、室温まで冷却して接合を完了し
た。この接合体の気密性をHeリ−クディテクタ−によ
り評価したところ、検出限界以下の高気密性を示し、ま
た切断して接合部組織を観察した結果、約15μm の均
一な接合層が形成されており、良好な接合が得られるこ
とがわかった。
Embodiment 2 FIG. 2 is a schematic constitutional view of a second embodiment showing a joining method of the present invention, showing a case where insulating ceramics are joined together using a conductive joining agent. First, the conductivity is 10
-13 [Ω · cm] -1 or less circular pipe-shaped Si 3 N 4 ceramics (φ20 × φ15 × 100) to-be-joined member 1
Between a and 1b, on both abutting surfaces of heating ceramics 2 (φ20 × φ15 × 5) made of ring-shaped TiN-containing Si 3 N 4 ceramics having a conductivity of about 10 2 [Ω · cm] -1 or less. , Ti-based active metal brazing agents 3a, 3b (20
0 μm) is provided. Next, as in the first embodiment, a pressure device (not shown) is applied to the structure to be joined to fix the structure, and the induction heating coil is attached to the outer periphery of the butt portion of the structure. 4 is arranged,
The high frequency power supply device 5 is connected to both ends of the coil 4. In such a configuration, the heating atmosphere 2 and the bonding agents 3a and 3b are applied to the heating ceramic 2 and the bonding agents 3a and 3b by applying a high-frequency current of 50 KHz to the coil 4 by the high-frequency power supply device 5 while making the bonding atmosphere a vacuum and rotating the above-described structure around the central axis. Induction heating was performed, and the generated heat was used to heat the butt section and its vicinity. The input power was adjusted while monitoring with a radiation thermometer so that the temperature at the butt section was about 900 ° C. About 900 ° C
After holding for 5 minutes, it was cooled to room temperature to complete the bonding. When the airtightness of this joined body was evaluated by a He leak detector, it showed a high airtightness below the detection limit, and when the joint structure was observed by cutting, a uniform joining layer of about 15 μm was formed. It was found that good bonding was obtained.

【0008】実施例3 本発明の第3の実施例は、第2の実施例の概略構成図
(図2参照)で示しており、絶縁性接合剤を用いて絶縁
性セラミックス同士を接合する例である。導電率が10
-13 [Ω・cm]-1以下である丸パイプ状のAl2 3
ラミックス(φ20×φ15×100)の被接合部材1
a,1b間に、導電率が約102 [Ω・cm]-1であるリ
ング状のTiN含有Al2 3 セラミックス製の加熱用
セラミックス2(φ20×φ15×5)の両突合せ面
に、B2 3 系酸化物ソルダーの接合剤3a,3b(4
00μm )を設けて配設し、適宜の圧力Pを加えて固定
する。なお、誘導加熱用コイル4及び高周波電源装置5
は、第1の実施例と同様である。このような構成におい
て、接合雰囲気を大気中とし、上記被接合構成体を中心
軸の回りに回転させながら、高周波電源装置5によりコ
イル4に50KHz の高周波電流を通じ、加熱用セラミッ
クス2を誘導加熱させ、その発生熱により突合せ部及び
その近傍を加熱させた。突合せ部の温度が約750℃に
なるように、放射温度計からの信号により投入電力を自
動的に調整した。約750℃で5分間保持した後、室温
まで冷却して接合を完了した。上記実施例と同様の評価
を行った結果、良好な接合が得られることがわかった。
Example 3 The third example of the present invention is shown in the schematic configuration diagram of the second example (see FIG. 2), and an example in which insulating ceramics are bonded to each other using an insulating bonding agent. Is. Conductivity is 10
-13 [Ω · cm] -1 or less circular pipe-shaped Al 2 O 3 ceramics (φ20 × φ15 × 100) to be joined member 1
Between a and 1b, on both abutting surfaces of heating ceramics 2 (φ20 × φ15 × 5) made of ring-shaped TiN-containing Al 2 O 3 ceramics having a conductivity of about 10 2 [Ω · cm] −1 , B 2 O 3 -based oxide solder bonding agent 3 a, 3 b (4
00 μm) is provided and fixed, and an appropriate pressure P is applied and fixed. The induction heating coil 4 and the high frequency power supply device 5
Is the same as in the first embodiment. In such a structure, the bonding atmosphere is set to the atmosphere, and the high-frequency power supply device 5 applies a high-frequency current of 50 KHz to the coil 4 to cause the heating ceramics 2 to be induction-heated while rotating the structure to be bonded around the central axis. The butt and its vicinity were heated by the generated heat. The input power was automatically adjusted by the signal from the radiation thermometer so that the temperature of the butt section was about 750 ° C. After holding at about 750 ° C. for 5 minutes, it was cooled to room temperature to complete the bonding. As a result of performing the same evaluation as that of the above-mentioned example, it was found that good bonding was obtained.

【0009】実施例4 本発明の第4の実施例は、第2の実施例の概略構成図
(図2参照)で示しており、導電性接合剤を用いて低導
電性セラミックス同士を接合する例である。導電率が1
-2[Ω・cm]-1である丸パイプ状の低導電性SiCセ
ラミックス(φ20×φ15×100)の被接合部材1
a,1b間に、導電率が約102 [Ω・cm]-1であるリ
ング状の高導電性SiCセラミックス製の加熱用セラミ
ックス2(φ20×φ15×5)の両突合せ面に、Ti
系活性金属ろう剤の接合剤3a,3b(200μm )を
設けて配設し、適宜の圧力Pを加えて固定する。なお、
誘導加熱用コイル4及び高周波電源装置5は、第1の実
施例と同様である。このような構成において、接合雰囲
気を真空とし、上記被接合構成体を中心軸の回りに回転
させながら、高周波電源装置5によりコイル4に50KH
z の高周波電流を通じ、加熱用セラミックス2及び接合
剤3a,3bを誘導加熱させ、その熱伝導により被接合
部材1a,1bの温度が上昇すると、その抵抗が減少
し、この部分にも誘導電流が流れるようになり、これら
全ての発熱が相まって、突合せ部全体を加熱させる。こ
の場合においては、加熱用セラミックス2及び接合剤3
a,3bの発熱が最も大きいために、突合せ部を中心と
した効果的な加熱ができる。突合せ部の温度が約900
℃になるように、放射温度計によりモニターしながら投
入電力を調整した。約900℃で5分間保持した後、室
温まで冷却して接合を完了した。この接合体の気密性を
Heリ−クディテクタ−により評価したところ、検出限
界以下の高気密性を示し、また切断して接合部組織を観
察した結果、約15μm の均一な接合層が形成されてお
り、良好な接合が得られることがわかった。SiCセラ
ミックスは、原料、不純物、焼成条件、組織などでその
導電性が大きく変化する素材であり、102 [Ω・cm]
-1から10-13 [Ω・cm]-1まで種々のものが市販され
ている。また、その温度特性も種々で、温度上昇に対
し、初めは導電性が増加するが、その後、逆に減少する
ものもある。このように種々の導電性の特性を有する素
材に対しても、本発明の接合方法が適用できることは言
うまでもない。
Embodiment 4 The fourth embodiment of the present invention is shown in the schematic configuration diagram of the second embodiment (see FIG. 2), in which low-conductivity ceramics are bonded together using a conductive bonding agent. Here is an example. Conductivity is 1
Round pipe-shaped low-conductivity SiC ceramics (φ20 × φ15 × 100), which is 0 −2 [Ω · cm] −1 , to be joined 1
Between a and 1b, the two butting surfaces of the heating ceramics 2 (φ20 × φ15 × 5) made of ring-shaped highly conductive SiC ceramics having a conductivity of about 10 2 [Ω · cm] −1 , Ti
The bonding agents 3a and 3b (200 μm) of the system active metal brazing agent are provided and arranged, and fixed by applying an appropriate pressure P. In addition,
The induction heating coil 4 and the high frequency power supply device 5 are the same as those in the first embodiment. In such a structure, the bonding atmosphere is set to be vacuum, and the high frequency power supply device 5 rotates the coil 4 to 50 KH while rotating the structure to be bonded around the central axis.
When the heating ceramics 2 and the bonding agents 3a and 3b are induction-heated by the high frequency current of z and the temperature of the members 1a and 1b to be bonded rises due to the heat conduction, the resistance decreases, and the induction current is also applied to this part. It flows and all of these heat generations are combined to heat the entire butt section. In this case, the heating ceramics 2 and the bonding agent 3
Since a and 3b generate the largest amount of heat, effective heating can be performed centering on the butted portion. Butt temperature is about 900
The input power was adjusted while monitoring with a radiation thermometer so that the temperature became 0 ° C. After holding at about 900 ° C. for 5 minutes, it was cooled to room temperature to complete the joining. When the airtightness of this joined body was evaluated by a He leak detector, it showed a high airtightness below the detection limit, and when the joint structure was observed by cutting, a uniform joining layer of about 15 μm was formed. It was found that good bonding was obtained. SiC ceramics is a material whose conductivity changes greatly depending on the raw material, impurities, firing conditions, structure, etc., and is 10 2 [Ω · cm].
Various products ranging from -1 to 10 -13 [Ω · cm] -1 are commercially available. Further, the temperature characteristics are also various, and there is a case where the conductivity increases at first as the temperature rises, but then decreases conversely. Needless to say, the joining method of the present invention can be applied to such materials having various conductive properties.

【0010】実施例5 本発明の第5の実施例は、第2の実施例の概略構成図
(図2参照)で示しており、絶縁性接合剤を用いて低導
電性セラミックス同士を接合する例である。導電率が1
-2[Ω・cm]-1である丸パイプ状の低導電性SiCセ
ラミックス(φ20×φ15×100)の被接合部材1
a,1b間に、導電率が約102 [Ω・cm]-1であるリ
ング状の高導電性SiCセラミックス製の加熱用セラミ
ックス2(φ20×φ15×5)の両突合せ面に、Ca
2 系の接合剤3a,3b(400μm )を設けて配設
し、適宜の圧力Pを加えて固定する。なお、誘導加熱用
コイル4及び高周波電源装置5は、第1の実施例と同様
である。このような構成において、接合雰囲気を大気中
とし、上記被接合構成体を中心軸の回りに回転させなが
ら、高周波電源装置5によりコイル4に50KHz の高周
波電流を通じ、加熱用セラミックス2を誘導加熱させ、
その熱伝導により被接合部材1a,1bの温度が上昇す
ると、その抵抗が減少し、この部分にも誘導電流が流れ
るようになり、これら全ての発熱が相まって、突合せ部
全体を加熱させる。この場合においては、加熱用セラミ
ックス2の発熱が最も大きいために、突合せ部を中心と
した効果的な加熱ができる。突合せ部の温度が約150
0℃になるように、放射温度計からの信号により投入電
力を自動的に調整した。約1500℃で10分間保持し
た後、室温まで冷却して接合を完了した。上記実施例と
同様の評価を行った結果、良好な接合が得られることが
わかった。
Fifth Embodiment A fifth embodiment of the present invention is shown in a schematic configuration diagram of the second embodiment (see FIG. 2), in which low-conductivity ceramics are bonded to each other using an insulating bonding agent. Here is an example. Conductivity is 1
Round pipe-shaped low-conductivity SiC ceramics (φ20 × φ15 × 100), which is 0 −2 [Ω · cm] −1 , to be joined 1
Between the a and the 1b, Ca is applied to both abutting surfaces of the heating ceramics 2 (φ20 × φ15 × 5) made of a ring-shaped highly conductive SiC ceramics having a conductivity of about 10 2 [Ω · cm] −1.
The F 2 -based bonding agents 3a and 3b (400 μm) are provided and disposed, and an appropriate pressure P is applied and fixed. The induction heating coil 4 and the high frequency power supply device 5 are the same as those in the first embodiment. In such a structure, the bonding atmosphere is set to the atmosphere, and the high-frequency power supply device 5 applies a high-frequency current of 50 KHz to the coil 4 to cause the heating ceramics 2 to be induction-heated while rotating the structure to be bonded around the central axis. ,
When the temperature of the members to be joined 1a, 1b rises due to the heat conduction, the resistance thereof decreases, and the induced current also flows in this portion, and all of these heat generations combine to heat the entire butt portion. In this case, since the heating ceramics 2 generate the largest amount of heat, effective heating centering on the butted portion can be performed. Butt temperature is about 150
The input power was automatically adjusted by the signal from the radiation thermometer so that the temperature became 0 ° C. After holding at about 1500 ° C. for 10 minutes, it was cooled to room temperature to complete the bonding. As a result of performing the same evaluation as that of the above-mentioned example, it was found that good bonding was obtained.

【0011】実施例6 図3は本発明の接合方法を示す第6の実施例の概略構成
図であって、補助加熱手段を併用して接合する場合を示
している。その目的は、室温において導電性が小さく、
ほとんど高周波誘導加熱が期待できないような素材に対
して、接合部の耐熱性を高めるために接合温度を高くす
る必要があったり、また、生産性を高めるためや接合部
の劣化を最小限にとどめる目的などで接合時間を極端に
短くしたいような場合、上記までのような方法のみで
は、接合時の熱応力のために被接合セラミックス部材ま
たは加熱用セラミックスが破損することがある。このよ
うな場合、被接合構成体の突合せ部近傍または全体にわ
たって補助加熱手段により、前もってある温度まで予備
加熱しておくことにより、その後の高周波加熱により加
熱用セラミックスを中心に接合温度まで急速加熱した時
の熱勾配を穏やかにし、熱衝撃による部材の破損を防ぐ
ことができる。導電率が100 [Ω・cm]-1である丸パ
イプ状の低導電性多孔質SiCセラミックス(φ20×
φ15×100)の被接合部材1a,1b間に、導電率
が約102 [Ω・cm]-1であるリング状の高導電性Si
含浸反応焼結SiCセラミックス製の加熱用セラミック
ス2(φ20×φ15×5)の両突合せ面に、Si系ろ
う剤の接合剤3a,3b(200μm )を設けて配設
し、適宜の圧力Pを加えて固定する。なお、誘導加熱用
コイル4及び高周波電源装置5は、第1の実施例と同様
である。さらに、本実施例では、突合せ部を誘導加熱に
よる本加熱開始前から、ある温度まで予備加熱させるた
めに、2組のランプ加熱装置による補助加熱手段6a,
6a及び6b,6bを配設する。このような構成におい
て、接合雰囲気をArガスとし、上記被接合構成体を中
心軸の回りに回転させながら、補助加熱手段6a,6b
により誘導加熱用コイル4近傍の被接合セラミックス部
材1a,1bを約1000℃まで予備加熱をした後、約
1分間の誘導加熱により、加熱用セラミックスおよび接
合剤を発熱させ、突合せ部全体を約1450℃まで加熱
して接合剤とセラミックス部材および加熱用セラミック
スを反応させた。その後、室温まで冷却して接合を完了
した。この接合体を切断して接合部組織を観察した結
果、約30μm の均一な接合層が形成されており、良好
な接合が得られることがわかった。なお、比較のため
に、補助加熱手段による予備加熱を行わずに高周波誘導
加熱のみで接合しようとしたが、加熱時に被接合セラミ
ックス部材にクラックが発生し、その部分で破損してし
まった。
Embodiment 6 FIG. 3 is a schematic constitutional view of a sixth embodiment of the joining method of the present invention, showing the case where joining is carried out together with auxiliary heating means. Its purpose is to have low conductivity at room temperature,
For materials for which high frequency induction heating cannot be expected, it is necessary to raise the bonding temperature in order to increase the heat resistance of the joint, and to improve productivity and minimize deterioration of the joint. When it is desired to shorten the joining time extremely for the purpose, the above-mentioned methods alone may damage the ceramic members to be joined or the heating ceramics due to thermal stress at the time of joining. In such a case, auxiliary heating means preliminarily heats the vicinity of the abutting portion of the structure to be bonded or the entire structure to a certain temperature in advance, and thereafter the high frequency heating rapidly heats the heating ceramics to the bonding temperature. It is possible to make the thermal gradient gentle and prevent damage to the member due to thermal shock. Round pipe-shaped low-conductivity porous SiC ceramics with a conductivity of 10 0 [Ω · cm] -1 (φ20 x
A ring-shaped highly conductive Si having a conductivity of about 10 2 [Ω · cm] −1 between the bonded members 1 a and 1 b of φ15 × 100)
The heating ceramics 2 (φ20 × φ15 × 5) made of the impregnation reaction sintered SiC ceramics are provided with the bonding agents 3a and 3b (200 μm) of the Si-based brazing agent on both abutting surfaces, and an appropriate pressure P is applied. In addition, fix. The induction heating coil 4 and the high frequency power supply device 5 are the same as those in the first embodiment. Further, in this embodiment, in order to preheat the butt portion to a certain temperature before the main heating by the induction heating is started, the auxiliary heating means 6a, which includes two sets of lamp heating devices,
6a and 6b, 6b are provided. In such a structure, the bonding atmosphere is Ar gas, and the auxiliary heating means 6a and 6b are rotated while rotating the structure to be bonded around the central axis.
After preheating the ceramic members to be bonded 1a, 1b in the vicinity of the induction heating coil 4 to about 1000 ° C., the induction heating for about 1 minute causes the heating ceramics and the bonding agent to generate heat, and the entire butt portion is heated to about 1450. The bonding agent was reacted with the ceramic member and the heating ceramics by heating to ℃. Then, it cooled to room temperature and completed joining. As a result of slicing this bonded body and observing the bonded structure, it was found that a uniform bonded layer of about 30 μm was formed and good bonding was obtained. For comparison, an attempt was made to join only by high-frequency induction heating without performing preheating by the auxiliary heating means, but a crack was generated in the ceramic member to be joined during heating, and the portion was broken.

【0012】実施例7 本発明の第7の実施例は、第6の実施例の概略構成図
(図3参照)で示しており、補助加熱手段を併用して接
合する他の例である。導電率が100 [Ω・cm]-1であ
る丸パイプ状の低導電性多孔質SiCセラミックス(φ
20×φ15×100)の被接合部材1a,1b間に、
導電率が約102 [Ω・cm]-1であるリング状の高導電
性Si含浸反応焼結SiCセラミックス製の加熱用セラ
ミックス2(φ20×φ15×5)の両突合せ面に、S
i/C/有機バインダーからなる接合剤3a,3b(1
00μm )を設けて配設し、適宜の圧力Pを加えて固定
する。なお、誘導加熱用コイル4及び高周波電源装置5
は、第1の実施例と同様であり、また補助加熱手段6
a,6a及び6b,6bは、実施例6と同様でる。この
ような構成において、接合雰囲気をArガスとし、上記
被接合構成体を中心軸の回りに回転させながら、補助加
熱手段6a,6bにより誘導加熱用コイル4近傍の被接
合セラミックス部材1a,1bを約1000℃まで予備
加熱をした後、約1分間の誘導加熱により、加熱用セラ
ミックスおよび接合剤を発熱させ、突合せ部全体を約1
500℃まで加熱すると、加熱用セラミックス中のSi
が接合剤中のカーボンと反応してSiC化することによ
り、セラミックス部材および加熱用セラミックスを結合
させた。その後、室温まで冷却して接合を完了した。こ
の接合体を切断して接合部組織を観察した結果、約10
0μm の均一な接合層が形成されており、良好な接合が
得られることがわかった。上記の実施例6及び7の補助
加熱手段として、ランプ加熱装置を使用したが、他の加
熱法、例えば、通常の電気抵抗加熱、間接的な高周波誘
導加熱、ガス炎による加熱、レ−ザ−による加熱などが
使用可能である。補助加熱温度は高いほど、後工程の高
周波加熱時の熱衝撃が抑えられるが、上記の補助加熱手
段は表面からの加熱であり、間接加熱であるので、その
エネルギ−効率が悪いため、被接合部材の寸法、形状、
接合温度、耐熱衝撃性などによって、できるだけ熱衝撃
による悪影響を防止でき得る最小限の加熱にとどめるの
が望ましい。また、その加熱領域も試料全体を加熱して
も良いが、本発明の本来の目的(局部加熱による接合)
からすると、やはり熱衝撃による悪影響を防止できるよ
うな温度分布を形成するように、突合せ部近傍のみの補
助加熱を行う方が望ましい。なお、実施例1乃至5の被
接合構成体においても、実施例6及び7の方法が適用可
能である。以上の実施例において、被接合セラミックス
部材1a,1bとしては、実施例で示したSi3 4
Al2 3 ,SiC以外の絶縁性セラミックス(例え
ば、AlN,サイアロン,ムライトなど)や低導電性セ
ラミックス(例えば、ZrO 2 ,低導電性複合セラミッ
クスなど)が適用可能である。また、同種のセラミック
ス同士間の接合のみならず、異種のセラミックス同士の
接合にも適用可能である。加熱用セラミックス2として
は、SiC,WCなどの炭化物、TiN,TaNなどの
窒化物、ZrO2 ,LaCrO2 などの酸化物、MoS
2 ,MoSiなどのケイ化物、TiB2 などのホウ化
物、TiN,SiCなどの導電性付与物質を含むSi3
4 やサイアロンなどの複合セラミックス、セラミック
スと金属とからなるサ−メットなどのあらゆる導電性セ
ラミックスが例示できるが、被接合部材と同等の性能を
得るために、被接合部材に近い物性、その他の特性を有
するものを選定することが望ましい。また、その厚みは
被接合部材の熱容量、熱伝導率などの熱的物性や接合温
度などから必要な加熱が得られるように選定される。ま
た、接合時の温度分布により、室温時に発生する残留応
力の影響を軽減するために、接合時の温度分布や使用す
る接合剤の熱膨張率などに応じて、残留応力が最低にな
るような適当な熱膨張率及び厚みを有する材料を選定す
るのが望ましい。さらに、接合部表面にも電気絶縁性が
要求される用途に対しては、導電性セラミックスの周囲
の内で、電気絶縁性が要求される部分に絶縁性セラミッ
クスを設けた構造にすることもできる。実施例1のよう
に、接合剤を用いることなく直接接合する方法は、被接
合部材と同等の接合部が形成されるために、接合性能と
しては理想的であるが、高温、高圧力を必要とし、簡便
な方法とは言えない。その点、接合剤を用いる方法の方
が簡便な方法と言える。接合剤としては、実施例2,4
及び6のような活性金属ろう材や貴金属などの金属系接
合剤や実施例3及び5のような酸化物やフッ化物などか
らなる無機物接合剤などが使用でき、被接合セラミック
ス部材との反応性や要求性能(例えば、耐熱性、耐食性
などは無機物接合剤の方が優れている。)から最も適当
なものを選択すればよい。無機物接合剤の内、絶縁性の
接合剤を用いた場合、発熱は加熱用セラミックスのみで
発生することになる。また、上記実施例のような接合剤
を溶融させて、セラミックス部材と反応させる方法の他
に、実施例7のような反応焼結法や固相拡散法など接合
剤を溶融させない方法にも本発明が適用できる。接合剤
を溶融させる方法は、最も簡便で気密性が得られ易い
が、一般に耐熱性は低い。これに対し、他の方法は、耐
熱性、高強度の接合が可能であるが、高温、高圧力が必
要であったりして簡便性には欠ける。したがって、必要
な接合性能に応じてどのような接合剤を使用するかを選
択して、本発明に適用すればよい。誘導加熱用コイルの
形状、寸法や電源の周波数などは、加熱用セラミックス
の形状、寸法や導電率などの物性より、効率のよいもの
を選定する。この誘導加熱用コイルは、通常パイプ状の
被接合部材の外周側に設置するが、内周側に設置しても
よい。ただし、コイルが上記被接合構成体の導電性部分
に接触しないように設ける必要がある。また、通電電流
の周波数として、50KHz に限定されるものではなく、
300Hz乃至500KHz の周波数が使用できる。被接合
構成体を回転させているのは、突合せ部の円周方向にお
ける温度を均一にするためであり、加熱用セラミックス
などの各部分が円周方向に電気的に均一であり、かつコ
イルとの位置関係が正確に制御される場合やそれほど温
度分布が影響しないような場合は、構成体を静止した状
態で接合してもよい。加熱冷却速度は、セラミックスが
熱衝撃で破損しないような速度とする必要がある。接合
雰囲気は、接合剤、被接合部材、加熱用セラミックスの
機能を損なわないような雰囲気を選ぶ必要がある。この
雰囲気調整を行う方法としては、被接合構成体の全体ま
たは突合せ部の近傍部分のみとコイルをチャンバー内に
置き、チャンバー内を真空置換またはガスフローを行う
方法、コイルと被接合構成体との間に被接合構成体の全
体または突合せ部の近傍部分のみを覆うように、耐熱、
絶縁性の管状反応管を設け、反応管内を真空置換または
ガスフローを行う方法、単に突合せ部にガスを吹きかけ
る方法などがある
[0012]Example 7 7th Example of this invention is a schematic block diagram of 6th Example.
(See Fig. 3).
It is another example of combining. Conductivity is 100[Ω · cm]-1And
Round pipe-shaped low conductive porous SiC ceramics (φ
20 × φ15 × 100) between the members 1a and 1b to be joined,
Conductivity is about 102[Ω · cm]-1Ring-shaped high conductivity
Heating impregnation made of reactive Si-impregnated reaction-sintered SiC ceramics
S on both butting surfaces of Mix 2 (φ20 × φ15 × 5)
i / C / organic binder bonding agent 3a, 3b (1
00 μm) is installed and fixed, and an appropriate pressure P is applied and fixed.
To do. The induction heating coil 4 and the high frequency power supply device 5
Is the same as in the first embodiment, and the auxiliary heating means 6
a, 6a and 6b, 6b are the same as in the sixth embodiment. this
In such a structure, the bonding atmosphere is Ar gas, and
While rotating the structure to be joined around the central axis,
Contact by the heating means 6a, 6b near the induction heating coil 4
Preliminarily prepare composite ceramic members 1a and 1b up to about 1000 ° C
After heating, apply induction heating for about 1 minute, and
Heats the mix and bonding agent to about 1
When heated to 500 ° C, Si in heating ceramics
By reacting with carbon in the bonding agent to form SiC
The ceramic member and heating ceramics
Let Then, it cooled to room temperature and completed joining. This
As a result of observing the joint structure by cutting the joint body of about 10
A uniform bonding layer of 0 μm is formed, and good bonding is achieved.
It turned out to be obtained. Auxiliary of Examples 6 and 7 above
A lamp heating device was used as the heating means, but other heating
Thermal methods such as normal electrical resistance heating, indirect high frequency induction
Conductive heating, gas flame heating, laser heating, etc.
It can be used. The higher the auxiliary heating temperature, the higher the post-process.
Although the thermal shock during frequency heating is suppressed, the above auxiliary heating
Since the step is heating from the surface and indirect heating,
Since the energy efficiency is poor, the size, shape, and
Thermal shock as much as possible depending on the bonding temperature and thermal shock resistance
The minimum heating that can prevent the adverse effects of
Is desirable. In addition, the heating area also heats the entire sample.
Although good, the original purpose of the present invention (joining by local heating)
Therefore, it is possible to prevent the adverse effects of thermal shock.
In order to form a temperature distribution like
It is desirable to perform auxiliary heating. It should be noted that the samples of Examples 1 to 5 were
The method of Examples 6 and 7 can also be applied to the bonded structure.
Noh. In the above examples, the ceramics to be bonded
As the members 1a and 1b, Si shown in the embodiment is used.3NFour
Al2O3, Insulating ceramics other than SiC (eg
For example, AlN, sialon, mullite, etc.) and low conductivity cell
Ramix (eg ZrO 2, Low conductivity composite ceramic
Kusu) is applicable. Also the same kind of ceramic
Not only the joining of two ceramics
It can also be applied to joining. As heating ceramics 2
Is a carbide such as SiC or WC, or TiN or TaN
Nitride, ZrO2, LaCrO2Oxides such as MoS
i2, Silicides such as MoSi, TiB2Boring such as
And Si containing a conductivity-imparting substance such as TiN or SiC3
NFourCeramics such as and sialon, ceramics
All conductive cermets such as cermets consisting of
Lamix can be used as an example, but it has the same performance as the materials to be joined.
In order to obtain
It is desirable to select one that does. Also, its thickness is
Thermal properties such as heat capacity and thermal conductivity of the materials to be joined and the joining temperature
It is selected so that the required heating can be obtained from the degree. Well
In addition, due to the temperature distribution during joining, the residual reaction that occurs at room temperature
In order to reduce the effect of force, the temperature distribution and
Depending on the coefficient of thermal expansion of the bonding agent,
Select a material with an appropriate coefficient of thermal expansion and thickness
Is desirable. Furthermore, the surface of the joint also has electrical insulation.
Surrounding conductive ceramics for required applications
Insulating ceramic
It is also possible to have a structure with a box. As in Example 1
In addition, the method of directly joining without using a bonding agent is
Since a joint part equivalent to a composite member is formed,
Ideal, but requires high temperature and pressure, and is simple
I can't say that. In that respect, the method using a bonding agent
Can be said to be a simple method. Examples of the bonding agent are Examples 2 and 4.
And active metal brazing filler metals such as 6 and metal-based contacts such as precious metals
Mixture or oxide or fluoride as in Examples 3 and 5
Inorganic bonding agent consisting of
Reactivity with steel members and required performance (for example, heat resistance, corrosion resistance
For example, the inorganic binder is superior. ) Most suitable
You can select the right one. Of the inorganic binders, the insulating
When using a bonding agent, heat is generated only by the heating ceramics.
Will occur. In addition, the bonding agent as in the above example
Other than the method of melting and reacting with the ceramic member
In addition, bonding such as reaction sintering method or solid phase diffusion method as in Example 7 is performed.
The present invention can be applied to a method in which the agent is not melted. Bonding agent
The method of melting is the simplest and the airtightness is easily obtained.
However, the heat resistance is generally low. On the other hand, other methods
Although it is possible to bond with heat and high strength, high temperature and high pressure are required.
However, it is not convenient. Therefore necessary
Which bonding agent to use according to the desired bonding performance
Alternatively, it may be applied to the present invention. Of induction heating coil
Shapes, dimensions, power supply frequency, etc.
More efficient than the physical properties such as shape, size and conductivity
Is selected. This induction heating coil is usually a pipe
Although it is installed on the outer peripheral side of the members to be joined,
Good. However, the coil is a conductive part of the structure to be joined.
It is necessary to provide it so that it does not come into contact with. Also, the energizing current
The frequency is not limited to 50KHz,
Frequencies between 300Hz and 500KHz can be used. To be joined
The structure is rotated in the circumferential direction of the abutting part.
This is because the heating temperature is made uniform and the heating ceramics
, Etc. are electrically uniform in the circumferential direction, and
If the positional relationship with the
If the degree distribution does not affect the state of static
You may join in a state. The heating / cooling rate is
The speed must be such that it will not be damaged by thermal shock. Joining
The atmosphere is made up of the bonding agent, the members to be bonded,
It is necessary to choose an atmosphere that does not impair the function. this
As a method of adjusting the atmosphere, the entire structure to be joined can be
Or the coil in the chamber only near the butt
Place and perform vacuum replacement or gas flow in the chamber
Method, the entire structure to be bonded between the coil and the structure to be bonded
Heat resistance to cover only the body or the vicinity of the butt,
An insulating tubular reaction tube is provided, and the inside of the reaction tube is vacuum replaced or
How to do gas flow, just spray gas on the butt
There are ways to

【0013】実施例8 図4(A)及び(B)は、それぞれ本発明の加熱接合用
インサ−ト材の第1の実施例を示す概略断面図及び斜視
図であって、本発明の接合方法を用いて接合する好適例
を示している。例えば、丸パイプ状の被接合部材同士を
接合する場合、リング状に製作された導電性の加熱用セ
ラミックス2の両突合せ面に、予め接合剤3a,3bを
形成して一体化する。本実施例の加熱用セラミックス2
の形状としては、被接合部材の寸法がφ20×φ15×
100であれば、被接合部材の突合せ面形状に合うよう
に、φ20×φ15×5の単純なリング状となる。ま
た、接合剤の形成方法としては、真空蒸着、イオンプレ
−ティング、スパッタリング、CVD、ディッピング、
メタライジング、溶射などの公知の薄膜または厚膜作成
技術が適用できる。このような加熱接合用インサ−ト材
を用いると、接合時の取扱いが容易になる。
Embodiment 8 FIGS. 4 (A) and 4 (B) are a schematic sectional view and a perspective view showing a first embodiment of the insert material for heating and joining of the present invention, respectively. A preferred example of joining using a method is shown. For example, when joining members to be joined in the shape of a round pipe, the joining agents 3a and 3b are previously formed on both abutting surfaces of the ring-shaped conductive ceramics for heating 2 to be integrated. Ceramics for heating 2 of this embodiment
As for the shape, the dimensions of the members to be joined are φ20 × φ15 ×
If it is 100, a simple ring shape of φ20 × φ15 × 5 is formed so as to match the shape of the abutting surface of the members to be joined. In addition, as a method of forming the bonding agent, vacuum deposition, ion plating, sputtering, CVD, dipping,
Known thin film or thick film forming techniques such as metallizing and thermal spraying can be applied. When such an insert material for heat bonding is used, handling at the time of bonding becomes easy.

【0014】実施例9 図5(A)及び(B)は、それぞれ本発明の加熱接合用
インサ−ト材の第2の実施例を示す概略断面図及び斜視
図であって、例えばリング状の導電性を有する加熱用セ
ラミックス2の両突合せ面に、被接合部材が嵌合容易に
なるように、つば構造を設けた形状に製作し、実施例8
と同様に、予め接合剤3a,3bを形成して一体化す
る。なお、接合剤の形成方法は、実施例8と同様である
ので省略する。このようなインサ−ト材を用いると、接
合時の位置合せがさらに容易になり、また接合性能が向
上する。
Embodiment 9 FIGS. 5 (A) and 5 (B) are a schematic sectional view and a perspective view, respectively, showing a second embodiment of the insert material for heat bonding of the present invention. The heating ceramics 2 having electroconductivity is manufactured in a shape in which a brim structure is provided on both abutting surfaces of the abutting surfaces so that the members to be joined can be fitted easily.
Similarly, the bonding agents 3a and 3b are previously formed and integrated. The method for forming the bonding agent is the same as in Example 8 and will not be described. When such an insert material is used, the alignment at the time of joining becomes easier and the joining performance is improved.

【0015】実施例10 図6は本発明の加熱接合用インサ−ト材の第3の実施例
を示す概略断面図であって、リング状に製作された導電
性の加熱用セラミックス2の内外周面全体に、それぞれ
絶縁性セラミックス21,22を設けた構成とする。次
いで、加熱用セラミックス2及び絶縁性セラミックス2
1,22の両突合せ面に、予め接合剤3a,3bを形成
して一体化する。また、導電性の加熱用セラミックス2
の内外周面全体及び両突合せ面全体に、絶縁性セラミッ
クスを設けた構成の両突合せ面に、予め接合剤3a,3
bを形成して一体化することができる。この絶縁性セラ
ミックスは、実施例4の接合剤の形成方法である薄膜ま
たは厚膜作成技術による導電性セラミックス上へのコー
ティングや導電性セラミックス作製時に、同時に一体焼
結してしまうなどの方法により形成される。なお、接合
剤の形成方法は、実施例8と同様であるので省略する。
このような加熱接合用インサ−ト材を用いると、接合部
表面にも電気絶縁性が要求される用途に対応できる。
Embodiment 10 FIG. 6 is a schematic cross-sectional view showing a third embodiment of the insert material for heating and joining of the present invention, in which the inner and outer circumferences of the ring-shaped conductive ceramics 2 for heating. Insulating ceramics 21 and 22 are provided on the entire surface, respectively. Next, the heating ceramics 2 and the insulating ceramics 2
Bonding agents 3a and 3b are previously formed on both abutting surfaces of 1 and 22 to be integrated. In addition, conductive heating ceramics 2
The bonding agents 3a, 3
b can be formed and integrated. This insulating ceramic is formed by a method such as simultaneous sintering during coating on conductive ceramics by the thin film or thick film forming technique which is the method of forming the bonding agent of Example 4, or simultaneous production of the conductive ceramics. To be done. The method for forming the bonding agent is the same as in Example 8 and will not be described.
By using such an insert material for heat bonding, it is possible to meet applications in which electrical insulation is required even on the surface of the bonding portion.

【0016】[0016]

【発明の効果】本発明の請求項1の効果は、導電率が小
さいセラミックス、特に絶縁性セラミックスに対して、
高周波加熱による局部加熱により、加熱効率の改善や接
合時間の大幅な短縮による低コストの接合が可能になる
と共に、大型形状の被接合部材にも対応できる。請求項
2の効果は、請求項1の効果に加えて、接合剤を介在さ
せることにより低加圧、低温度での接合が可能であり、
簡便な接合方法を提供することができる。請求項3の効
果は、請求項1及び2の効果に加えて、短時間接合、高
温接合が要求される接合または熱衝撃に弱い部材を接合
する場合、熱衝撃によるセラミックス部材の破損を防止
することができる。請求項4の効果は、取扱い及び接合
時の位置合せが容易になり、接合工程を簡略することが
でき、また現場作業が容易となる。
The effect of claim 1 of the present invention is that ceramics having a low electric conductivity, particularly insulating ceramics,
Local heating by high-frequency heating makes it possible to improve the heating efficiency and significantly reduce the joining time to achieve low-cost joining, and also to cope with large-sized members to be joined. The effect of claim 2 is, in addition to the effect of claim 1, that it is possible to perform bonding at low pressure and low temperature by interposing a bonding agent.
A simple joining method can be provided. In addition to the effects of claims 1 and 2, the effect of claim 3 prevents damage to the ceramic member due to thermal shock when bonding for a short time, high temperature bonding or a member vulnerable to thermal shock. be able to. The effect of claim 4 is that the handling and the alignment at the time of joining are easy, the joining process can be simplified, and the on-site work becomes easy.

【0017】[0017]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の接合方法を示す第1の実施例の概略構
成図である。
FIG. 1 is a schematic configuration diagram of a first embodiment showing a joining method of the present invention.

【図2】本発明の接合方法を示す第2乃至第5の実施例
の概略構成図である。
FIG. 2 is a schematic configuration diagram of second to fifth embodiments showing a joining method of the present invention.

【図3】本発明の接合方法を示す第6及び第7の実施例
の概略構成図である。
FIG. 3 is a schematic configuration diagram of sixth and seventh embodiments showing a joining method of the present invention.

【図4】(A)及び(B)は、それぞれ本発明の加熱接
合用インサ−ト材の第1の実施例を示す概略断面図及び
斜視図である。
4 (A) and 4 (B) are respectively a schematic sectional view and a perspective view showing a first embodiment of the insert material for heat bonding of the present invention.

【図5】(A)及び(B)は、それぞれ本発明の加熱接
合用インサ−ト材の第2の実施例を示す概略断面図及び
斜視図である。
5 (A) and 5 (B) are respectively a schematic sectional view and a perspective view showing a second embodiment of the insert material for heat bonding of the present invention.

【図6】本発明の加熱接合用インサ−ト材の第3の実施
例を示す概略断面図である。
FIG. 6 is a schematic sectional view showing a third embodiment of the insert material for heat bonding of the present invention.

【符号の説明】[Explanation of symbols]

1a,1b 被接合セラミックス部材 2 加熱用セラミックス 3a,3b 接合剤 4 誘導加熱用コイル 6a,6b 補助加熱手段 1a, 1b Ceramic member to be bonded 2 Ceramics for heating 3a, 3b Bonding agent 4 Coil for induction heating 6a, 6b Auxiliary heating means

───────────────────────────────────────────────────── フロントページの続き (72)発明者 星野 久清 大阪市淀川区田川2丁目1番11号 株式会 社ダイヘン内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hisashiki Hoshino 2-1-11, Tagawa, Yodogawa-ku, Osaka City Daihen Stock Company

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 被接合セラミックス部材同士間に、一部
または全部が前記被接合セラミックス部材よりも大きい
導電率を有する加熱用セラミックスを介在させ、前記被
接合セラミックス部材を突合せて被接合構成体を構成
し、前記被接合構成体を突合せ方向に加圧して前記突合
せ部の近傍に設けた誘導加熱用コイルに通電することに
より、主に前記加熱用セラミックスを誘導加熱させ、前
記誘導加熱により前記突合せ部を接合形成温度まで加熱
して接合するセラミックス同士の接合方法。
1. A ceramic body for heating, which is partially or wholly larger in electrical conductivity than the ceramic body to be joined, is interposed between the ceramic body to be joined, and the ceramic body to be joined is abutted to form a structural body to be joined. The heating ceramics are mainly heated by induction heating the induction heating coil provided in the vicinity of the butting portion by pressurizing the structure to be joined in the butting direction, and the butting is performed by the induction heating. A method for joining ceramics to each other by heating the parts to the joining temperature.
【請求項2】 被接合セラミックス部材同士間に接合剤
を介して、一部または全部が前記被接合セラミックス部
材よりも大きい導電率を有する加熱用セラミックスを介
在させ、前記被接合セラミックス部材を突合せて被接合
構成体を構成し、前記突合せ部の近傍に設けた誘導加熱
用コイルに通電することにより、主に前記加熱用セラミ
ックスまたは前記加熱用セラミックス及び接合剤を誘導
加熱させ、前記誘導加熱により前記突合せ部を接合形成
温度まで加熱して接合するセラミックス同士の接合方
法。
2. A ceramics for heating, which is partially or wholly larger in electrical conductivity than the ceramics to be bonded, is interposed between the ceramics to be bonded, and the ceramics to be bonded are butted to each other. By constructing a structure to be joined and energizing the induction heating coil provided in the vicinity of the butt portion, mainly the heating ceramics or the heating ceramics and the bonding agent are induction-heated, and the induction heating is performed to A method for joining ceramics in which the abutting portions are heated to a joint forming temperature and joined.
【請求項3】 請求項1または2記載の誘導加熱による
本加熱を開始する前から終了する後まで、補助加熱手段
により前記被接合構成体の一部または全部を、前記接合
形成温度よりも低い温度まで加熱するセラミックス同士
の接合方法。
3. From before the main heating by the induction heating according to claim 1 or 2 is started to after the main heating is completed, part or all of the constituents to be bonded are lower than the bonding formation temperature by auxiliary heating means. A method of joining ceramics that are heated to a temperature.
【請求項4】 請求項2記載の加熱用セラミックスの突
合せ面に接合剤層を形成して一体化した加熱接合用イン
サ−ト材。
4. An insert material for heating and joining, wherein a joining agent layer is formed on the abutting surface of the heating ceramics according to claim 2 and integrated.
JP3415792A 1991-02-26 1992-01-24 Joining method for ceramics with each other and thermal joining insert material Pending JPH0570253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3415792A JPH0570253A (en) 1991-02-26 1992-01-24 Joining method for ceramics with each other and thermal joining insert material

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3-56140 1991-02-26
JP5614091 1991-02-26
JP3415792A JPH0570253A (en) 1991-02-26 1992-01-24 Joining method for ceramics with each other and thermal joining insert material

Publications (1)

Publication Number Publication Date
JPH0570253A true JPH0570253A (en) 1993-03-23

Family

ID=26372941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3415792A Pending JPH0570253A (en) 1991-02-26 1992-01-24 Joining method for ceramics with each other and thermal joining insert material

Country Status (1)

Country Link
JP (1) JPH0570253A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009071297A (en) * 2007-08-22 2009-04-02 Mitsubishi Materials Corp Manufacturing device for substrate for power module and manufacturing method for substrate for power module
JP2013203586A (en) * 2012-03-28 2013-10-07 Mitsui Mining & Smelting Co Ltd Apparatus for producing ceramic joint body
JP2019023158A (en) * 2012-03-22 2019-02-14 サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド Extended length tube structures
CN113402289A (en) * 2021-05-08 2021-09-17 中广核研究院有限公司 Silicon carbide cladding induction heating connection method and silicon carbide cladding

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009071297A (en) * 2007-08-22 2009-04-02 Mitsubishi Materials Corp Manufacturing device for substrate for power module and manufacturing method for substrate for power module
JP2019023158A (en) * 2012-03-22 2019-02-14 サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド Extended length tube structures
JP2013203586A (en) * 2012-03-28 2013-10-07 Mitsui Mining & Smelting Co Ltd Apparatus for producing ceramic joint body
CN113402289A (en) * 2021-05-08 2021-09-17 中广核研究院有限公司 Silicon carbide cladding induction heating connection method and silicon carbide cladding

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