JPH0567768A - Photoelectronic apparatus - Google Patents

Abstract

PURPOSE:To provide a compact and efficient relay apparatus for multiple wavelength optical communications. CONSTITUTION:On a main face in a relay apparatus package 1, light emitting device units 23 and 24 and photodetector units 21 and 22 are provided in pair for receiving and emitting light with different wavelengths (lambdaA, lambdaB). Then, light is conducted through a receiving cable 6 to the photodetector unit 21 or 22, and is transmitted by the light emitting device unit 23 or 24 through a transmitting cable 7 to the outside. By connecting the relay apparatus with an amplifier circuit in an optical communication system, a signal detected by the photodetector unit can be amplifier and transmitted from the light emitting unit so that the relay apparatus functions as a relay apparatus for multiple wavelength communications.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optoelectronic device, and more particularly to an optoelectronic device having a plurality of light emitting element parts and light receiving element parts, and more particularly to a technique effective when applied to a repeater of multiple optical communication in optical communication.

[0002]

2. Description of the Related Art A light emitting diode is widely used as one of light emitting sources for a display device or optical communication. The light emitting diode is described, for example, in "Electronic Material", November 1983 issue, published by the Industrial Research Society, and P67 to P73, issued November 1, 1983. In this document,
Short wavelength band light emitting _{diode, Ga 1-y Al y As} (0 ≦
y ≦ 1) as an active layer and a heterojunction structure in which a GaAlAs mixed crystal having a higher Al composition ratio (mixed crystal ratio: y) is used as a confinement layer, and the light emitting diode element has a heterojunction on one side of the active layer. It is described that it has a single heterojunction structure provided in the above or a double heterojunction structure in which heterojunctions are provided on both surfaces of the active layer. Also,
The document also describes that "a light emission wavelength in the range of 0.65 to 0.9 [mu] m can be manufactured by changing the Al composition ratio in the active layer." Also, Ohmsha "Semiconductor laser and optical integrated circuit", published April 25, 1984, P
97 describes a Ga _-x In _1x As _y P _1-y / InP light emitting diode. GaInAsP / InP
The emission wavelength of the light emitting diode is 1.1 to 1.5 μm by appropriately selecting the mixed crystal ratio x, y of Ga or As.
m.

On the other hand, "National" issued by Ohmsha
Technical Report (January 1988, January 1988, January 1988)
Published on May 18, P35 to P40, introduces an optoelectronic integrated circuit (OEIC) used for optical communication in which a light receiving element and an electronic circuit are integrated on the same semiconductor substrate.

Further, the present applicant has proposed an optical repeater for optical communication in which a plurality of laser diodes are arranged on one surface of a semiconductor substrate and a light receiving element is provided on the other surface (Japanese Patent Application No. 60-15).
No. 8162).

[0005]

In the near infrared light emitting diode (IRED), product series having different emission wavelengths are commercially available. The emission wavelength of the light emitting diode is
As is clear from the above-mentioned reference, GaA forming the active layer
As a result of being determined by the Al mixed crystal ratio of the 1As layer, the wafer (G
In a light emitting diode element which is determined by a unit of a compound semiconductor substrate composed of aAs and is finally divided into chips into chips, a plurality of emission wavelengths cannot be obtained within a single (monolithic) chip. It is in. Also,
An optoelectronic device having a structure for emitting and receiving light of a plurality of emission wavelengths different from each other on the same surface side of a semiconductor substrate has not been developed.

An object of the present invention is to provide an optoelectronic device having a structure for emitting and receiving light having a plurality of emission wavelengths different from each other on the same surface side of a semiconductor substrate. The above and other objects and novel features of the present invention will be apparent from the description of the present specification and the accompanying drawings.

[0007]

The outline of a typical one of the inventions disclosed in the present application will be briefly described as follows. That is, the optoelectronic device of the present invention is
Appearance is composed of a package, an optical cable extending from the package, and a plurality of leads extending from the package, and is configured to perform wavelength division multiplexing communication. A semiconductor chip is arranged in the package. The semiconductor chip has two main surfaces on the same surface.
One light emitting element section and two light receiving element sections are provided.
One of the two light emitting element portions emits light having a wavelength λ _A , and the other light emitting element portion emits light having a wavelength λ _B. In the two light receiving element portions, one light receiving element portion has a wavelength λ _A and the other light receiving element portion has a wavelength λ _A.
It is configured so that the light _B can be received. Further, the package is provided with an optical cable extending inside and outside the package. The optical cable consists of a receiving cable and a transmitting cable. The tip of the receiving cable extending inside the package is connected to the optical demultiplexer. Two optical fibers are connected to the optical demultiplexer, and the tips of the respective optical fibers face the light receiving surfaces of the two light receiving element sections. The tip of the transmission cable extending into the package is connected to the optical demultiplexer. Two optical fibers are connected to the optical demultiplexer, and the tips of the respective optical fibers face the light emitting surfaces of the two light emitting element portions. Also, the package is fixed with leads extending inside and outside the package. The ends of these leads inside the package are electrically connected to the respective electrodes of the semiconductor chip.

[0008]

According to the above means, the optoelectronic device of the present invention is provided with two light emitting element portions and two light receiving element portions for receiving and emitting light of different wavelengths on the main surface of the semiconductor chip. Light is guided to these light receiving element sections by a receiving cable, and light is sent from the light emitting element section to the outside by a transmitting cable.
Therefore, by connecting this optoelectronic device to the amplifier circuit of the optical communication system, the signal detected by the light receiving element section can be amplified from the light emitting element section and transmitted, and can be used as a repeater in wavelength division multiplexing communication. ..

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 is a perspective view showing a semiconductor chip in an optoelectronic device according to an embodiment of the present invention, FIGS. 2 to 9 are schematic cross-sectional views in each step of manufacturing the semiconductor chip, and FIG. 2 is a first multilayer growth layer. FIG. 3 is a cross-sectional view showing a semiconductor substrate in which a region is formed, FIG. 3 is a cross-sectional view showing a semiconductor substrate in which a second multi-layer growth layer region is formed, and FIG. 4 is a cross-section showing a semiconductor substrate in which a third multi-layer growth layer region is formed. FIG. 5 is a cross-sectional view showing a semiconductor substrate in which a fourth multilayer growth layer region is formed, FIG.
Is a sectional view showing a semiconductor substrate having electrode materials formed on the front and back surfaces, FIG. 7 is a sectional view showing a semiconductor substrate having electrodes on the light emitting / receiving surface side patterned, and FIG. 8 is an isolation groove on the light emitting / receiving surface side. A cross-sectional view showing a semiconductor substrate on which is formed,
9 is a sectional view showing a semiconductor chip having a light emitting element section and a light receiving element section formed therein, FIG. 10 is a schematic enlarged sectional view showing an essential part of the light emitting element section, and FIG. 11 is a schematic view showing an essential section of the light receiving element section. FIG. 12 is a front view showing an essential part of an optoelectronic device for wavelength division multiplexing communication.

As shown in FIG. 12, the optoelectronic device of the present invention is a package 1 which is a closed box in appearance, and extends over the inside and outside of the package 1 and is attached to one side of the package 1. A plurality of leads 2 and the package 1
And an optical cable 3 attached to one side of the package 1. In the figure, the lid 5 attached to the package body 4 is removed so that the inside of the package can be seen. The optical cable 3
Consists of a receiving cable 6 and a transmitting cable 7.
The receiving cable (optical cable) 6 and the transmitting cable (optical cable) 7 are branched in a guide 9 attached to the outer surface of one side of the package body 4, and are separated from each other in the package body 4. ..
The tip of the receiving cable 6 is connected to the optical demultiplexer 10, and the tip of the transmitting cable 7 is connected to the optical multiplexer 1.
It is connected to 1. Two optical fibers 12 and 13 extend from the optical demultiplexer 10, and the ends of the optical fibers 12 and 13 face separate light receiving surfaces of two light receiving element portions described later. Also, two optical fibers 14 and 15 extend from the optical multiplexer 11, and the tips thereof face separate light emitting surfaces of two light emitting element portions described later.

On the other hand, in the package body 4, a chip carrier 17 made of an insulator is arranged. A metallization layer 19 is provided in a desired pattern on the main surface and the side surface of the chip carrier 17, although only a part thereof is shown. A semiconductor chip 20 described later is fixed on the metallized layer on the main surface of the chip carrier 17. Two light-receiving element portions 21 and 22 and two light-emitting element portions 2 are provided on the main surface of the semiconductor chip 20, that is, on the same surface.
3, 24 are provided. Then, the optical demultiplexer 10
The ends of the two optical fibers 12 and 13 extending from the optical fiber face the light receiving surfaces of the two light receiving element portions 21 and 22. In addition, the tips of the two optical fibers 14 and 15 extending from the optical multiplexer 11 are connected to the two light emitting element portions 23 and 23.
It faces 24 light emitting surfaces. Further, each metallized layer 19 on the main surface side of the chip carrier 17 and the electrode of the semiconductor chip 20 are electrically connected by a conductive wire 25. Further, the metallized layer 19 extending on the side surface of the chip carrier 17 and the inner end of the lead 2 are electrically connected by a conductive wire 26.

Therefore, when the optoelectronic device, that is, the optoelectronic device for wavelength division multiplex communication is incorporated in the amplifier circuit of the optical communication system, the optoelectronic device 27 can be used as a repeater for the wavelength division multiplex communication. That is, the receiving cable 6 of the optical cable 3 has a wavelength λ _A ,
When the reception information 28 on the wavelength λ _B is sent, the reception information 28 is separated into two by the optical demultiplexer 10 due to the difference in the wavelength. The separated reception signals are sent by the optical fibers 12 and 13 to the light receiving surfaces of the receivable light receiving element units 21 and 22, respectively. The light receiving element section 2
The signals detected by 1 and 22 have their outputs increased by the amplifier circuit, and are sent again from the light emitting element sections 23 and 24 to the optical fibers 14 and 15. The optical fiber 14,
Lights having different wavelengths (wavelength λ _A and wavelength λ _B ) are sent to 15 respectively, and they are combined by the optical multiplexer 11 and sent to the transmission cable 7. As a result, the transmission cable 7
The transmission information 29 is sent to the outside via the.

Next, the semiconductor chip 20 and its manufacturing method will be described. The semiconductor chip 20 is shown in FIG.
As shown in, a rectangular semiconductor substrate (semiconductor substrate) 30
Two light emitting element portions 23 and 24 as indicated by E ₁ and E ₂ and two light receiving element portions 21 and 22 as indicated by R ₁ and R ₂ are provided on the main surface of. On the back surface of the semiconductor substrate 30, a cathode electrode (electrode) 31 which is common to all elements is provided. In addition, the semiconductor substrate 30
An anode electrode (electrode) 32 is provided on the surface of each element portion of the main surface of the semiconductor substrate, and an isolation groove 33 is provided on the main surface of the semiconductor substrate 30, so that the anode electrode 32 of each element portion is formed. They are electrically isolated from each other. The anode electrode 32 is a light receiving element portion 21,
22 becomes a ring-shaped electrode, and the light emitting element portion 23,
In the case of No. 24, it is a rectangular electrode with the center part missing. The center of each of the electrodes is removed so that the reception light 34 and the transmission light 35 are not disturbed. A wire 25 is connected to each of the anode electrodes 32. In such a semiconductor chip 20, the emission light 35 of wavelength λ _A is emitted from the light emitting element portion 23 of E _{1, and the} emission light 3 of wavelength λ _B is emitted from the light emitting element portion 24 of E _2.
5 is emitted. Further, the light receiving element section R ₁ receives the received light 34 having the wavelength λ _A, and the light receiving element section 22 R _{2 is} received.
Can receive the received light 34 having the wavelength λ _B.

Next, a method of manufacturing such a semiconductor chip 20 will be described. In manufacturing the semiconductor chip 20, as shown in FIG. 2, a semiconductor substrate 30, specifically, an n ⁺ -InP substrate 30 is prepared. This n ⁺ −
The InP substrate 30 has an impurity concentration of 2 × 10 ¹⁸ cm ⁻³ and a final thickness of about 300 μm. In this embodiment, two light emitting element portions 23 and 24 are provided on the main surface of the n ⁺ -InP substrate 30, that is, on the same surface from left to right.
Then, two light receiving element portions 21 and 22 are formed. Also,
The two light emitting element portions 23 and 24 and the two light receiving element portions 21 and 22 have different wavelengths (wavelength λ _A , wavelength λ _A) .
The light of _B ) is emitted or received. Thus each element portion, for emitting or receiving light of different wavelengths, an In _1x
It is necessary to appropriately select and form the mixed crystal ratio of the active layer composed of Ga _−x As _y P _{1 -y} . Therefore, n ⁺ -InP substrate 30
Four multi-layer growth layer regions (first multi-layer growth layer region, second multi-layer growth layer region, third multi-layer growth layer region, fourth multi-layer growth layer region) are sequentially formed on the main surface of ..

As shown in FIG. 2, the first multilayer growth layer region is formed on the left end side of the main surface of the n ⁺ -InP substrate 30.
The first multi-layer growth layer region forms the light emitting element section 23. Therefore, the principal surface of the n ⁺ -InP substrate 30 except the region where the first multilayer growth layer region is formed is covered with the photoresist film 41. Next, the exposed n ⁺ -InP substrate 30
On the main surface of p-I by a conventional epitaxial growth method.
The nGaAsP layer 42 is formed. This p-InGaAs
The P layer 42 has an impurity concentration of 5 × 10 ¹⁷ cm ⁻³ and is formed with a thickness of 0.5 μm. Also, this p-I
The substantially center of the nGaAsP layer 42 is removed in a circular shape by etching. The p-InGaAsP layer 42 becomes the current confinement layer 43 by this etching process. The etched portion has a diameter of several tens of μm and finally becomes a current path region.

Next, epitaxial growth is sequentially performed on the current confinement layer 43 to form the n-InP buffer layers 44, p.
-InGaAsP active layer 45, p-InP confinement layer 46,
An n-InGaAsP surface layer 47 is formed. N-I
The nP buffer layer 44 has an impurity concentration of 1 × 10 ¹⁸ cm
The thickness becomes ^-3 and the thickness becomes 3 μm. P-
The InGaAsP active layer 45 has an impurity concentration of 3.5 × 1.
The thickness is 0 ¹⁸ cm ⁻³ and the thickness is 0.5 μm. The p-InP confinement layer 46 has an impurity concentration of 5.5.
The thickness is × 10 ¹⁷ cm ^-3 and the thickness is 1 μm. The n-InGaAsP surface layer 47 has an impurity concentration of 8 × 10 ¹⁷ cm ⁻³ and a thickness of 1 μm. In the formation of the light emitting element portion, that is, the light emitting diode, the above-described multilayer growth layer 4 for forming the light emitting element portion is formed.
8 is formed (see FIG. 10).

After the formation of the first multi-layer growth layer region, the photoresist film 41 is removed and, as shown in FIG. 3, the semiconductor substrate 30 excluding the second multi-layer growth layer region formation region is formed.
A photoresist film 50 is formed on the main surface and the multi-layered growth layer 48 for forming a light emitting element in the first multi-layered growth layer region.
Next, the light emitting element portion forming multilayer growth layer 48 is formed in the second multilayer growth layer region in the same manner as the above processing procedure. By the way, in this embodiment, the emission wavelength λ _A of the emitted light 35 of the light emitting element portion formed in the first multilayer growth layer region and the emission wavelength of the emitted light 35 of the light emitting element portion formed in the second multilayer growth layer region. It is formed so as to be different from λ _B. Therefore,
P-InGaAsP in the multi-layer growth layer 48 for forming the light emitting element portion in the first multi-layer growth layer region and the second multi-layer growth layer region
Active layer 45, i.e., the mixed crystal ratio of _{p-In 1x Ga -x As y} P 1-y active layer 45 (x, y) appropriately selected, InGaAs
The wavelength λ _A and the wavelength λ _B are selected and determined according to the application within the emission wavelength band of 1.1 to 1.5 μm in the sP system.

Next, after removing the photoresist film 50, as shown in FIG. 4, the main surface of the semiconductor substrate 30 and the first and second multilayer growth layer regions except the third multilayer growth layer region forming region are removed. A photoresist film 51 is formed on the surface of the light emitting element portion forming multilayer growth layer 48. Then, the n ^-- InP buffer layer 53 and the n ^-- InGa are sequentially formed on the exposed main surface of the semiconductor substrate 30 by the epitaxial growth method.
AsP active layer 54, n ^-- InP layer 55, n ^-- InP
The window layer 56 is formed, and the light-receiving element portion forming multilayer growth layer 57 is formed (see FIG. 11). The n ⁻ -InP buffer layer 53 has a thickness of 1.5 μm and an impurity concentration of 1 × 10 ¹⁵ c.
It is m ^-3 . The n ⁻ -InGaAsP active layer 5
No. 4 has a thickness of 2.3 μm and an impurity concentration of 3 × 10 ¹⁵ cm
^-3 . The n ⁻ -InP layer 55 has an impurity concentration of 1 × 10 ¹⁷ cm ⁻³ and a thickness of 0.2 μm. The n ⁻ -InP window layer 56 has an impurity concentration of 1 × 10 ¹⁵ cm ⁻³ and a thickness of 3 μm.

After removing the photoresist film 51, a photoresist film 58 is formed on the light emitting element portion forming multilayer growth layer 48 and the light receiving element portion forming multilayer growth layer 57, as shown in FIG. .. Then, similar to the above procedure, the light-receiving element portion forming multilayer growth layer 57 is formed on the exposed main surface of the semiconductor substrate 30, that is, the fourth multilayer growth layer region forming region. Two adjacent multi-layer growth layers 57 for forming light receiving element portions
As in the case of the two light emitting element portion forming multilayer growth layers 48, one of the light receiving element portion forming multilayer growth layers 57 receives the received light 34 of wavelength λ _A and the other light receiving element portion forming multilayer growth layers 57. The layer 57 is formed to receive the received light 34 having the wavelength λ _B. Therefore, ⁿ in the light-receiving element portion forming multilayer growth layer 57 - -InGaAsP active layer 54, i.e. ⁿ - -In _1x Ga _-x As _y mixed crystal ratio of P _1-y active layer 54 (x, y) wherein It is appropriately selected as in the case of the light emitting element section.

Next, the photoresist film 58 is removed. Thereafter, as shown in FIG. 6, electrode materials 60 and 61 are formed on the front and back surfaces of the semiconductor substrate 30. The electrode material 60 on the main surface of the semiconductor substrate 30 is AuGe-Ni-Au, and has a total thickness of about 2.7 μm. This electrode material 60
Are patterned later to become the anode electrodes 32 of the light receiving element and the light emitting element, as shown in FIGS. 7 and 1. The electrode material 61 is made of Ti-Pt-Au and has a total thickness of about 1.2 μm. The electrode material 61 is used as it is as the cathode electrode 31. Before providing the electrode material 61 on the back surface of the semiconductor substrate 30, the back surface of the semiconductor substrate 30 is ground to a predetermined thickness to a thickness of about 300 μm.

Next, as shown in FIG. 8, an isolation groove 33 is provided on the main surface of the semiconductor substrate 30. The isolation groove 33 is provided to electrically separate the anode electrodes 32 of the adjacent element portions from each other, and is provided at the boundary between the element portions to a depth reaching the surface of the semiconductor substrate 30.

Next, as shown in FIG. 9, each element portion is formed as a light emitting element portion 23, 24 and a light receiving element portion 21, 22. Thereby, the semiconductor chip 20 is formed. In the multilayer growth layer 48 for forming the light emitting element part,
The portion of the n-InGaAsP surface layer 47 substantially corresponding to the current path region is removed. As a result, as shown in the enlarged sectional view of FIG. 10, the light emitting element portions 23 and 24 are formed. In the light emitting element portions 23 and 24, when a predetermined voltage is applied to the anode electrode 32 and the cathode electrode 31, as shown in FIG. 1, light (transmitted light 35:
It emits light of wavelength λ _A and wavelength λ _B ). Further, in the light-receiving element portion forming multilayer growth layer 57, as shown in the enlarged cross-sectional view of FIG. 11, impurities (Zn) are diffused in the circular region corresponding to the ring-shaped anode electrode 32 to form a pn junction. To be done. The diffusion area 62, which is dotted with zinc diffused,
It is formed so as to reach the n ⁻ -InGaAsP active layer 54. The light-receiving element portion 21 thus formed,
In FIG. 22, as shown in FIG. 1, the light (reception light 34: wavelength λ _A , wavelength λ _B ) incident on the light receiving surface is received, and its light intensity is changed by the cathode electrode 31 and the anode electrode 32. Take out as electric output.

[0023]

According to such an embodiment, the following effects can be obtained. (1) In the optoelectronic device of the present invention, since a single semiconductor chip has a plurality of light emitting element portions and light receiving element portions, it is possible to obtain an effect that the application can be expanded.

(2) According to the above (1), in the semiconductor chip of the present invention, light emitting / light receiving element portions corresponding to a plurality of applications are arrayed in a minute area. Therefore, according to the present invention, it is possible to obtain an effect that an element having stable light output and light receiving sensitivity over a wide wavelength band can be modularized.

(3) In the optoelectronic device of the present invention, a single semiconductor chip has a plurality of light emitting element portions and light receiving element portions, and has a structure capable of exchanging specific emission wavelengths. Therefore, there is an effect that it can be used as a semiconductor chip of a repeater for wavelength division multiplexing communication.

(4) Due to the above (3), according to the present invention, since the received light can be received and the emitted light can be emitted by the single semiconductor chip, the optoelectronic device as the repeater can be miniaturized. The effect is obtained.

(5) Due to the above (3), according to the present invention, a structure having a plurality of light emitting element portions and light receiving element portions on a single semiconductor chip and capable of exchanging specific different emission wavelengths is provided. However, by advancing further, it is possible to provide redundancy between each element by providing multiple element sections for receiving and transmitting light of the same emission wavelength, and appropriately using them. be able to. By doing so, it is possible to obtain the effects that the life of the repeater can be extended and the reliability can be improved.

(6) Since the semiconductor chip of the present invention has a structure having a plurality of light emitting element portions and light receiving element portions on the same surface, in an optoelectronic device, an optical cable for signal transmission / reception is provided on one side of the package. It is possible to arrange it at any position, and it is easy to use.

(7) From the above (1) to (6), according to the present invention, there is a synergistic effect that an optical repeater having high reliability and long life can be provided at low cost in an optical communication system. can get.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say, for example,
In the above-mentioned embodiment, in order to emit or receive light having different wavelengths, in order to change the mixed crystal ratio, the multi-layer growth layer is formed separately by dividing the region, but other structures may be used. That is, the epitaxial layer has a tendency that the impurity concentration gradually decreases along the growth direction. Therefore, the impurity concentration (mixed crystal ratio) distribution in the depth direction in the epitaxial layer is positively changed, and the epitaxial layer is inclined by polishing as shown in FIG. 13 or selected as shown in FIG. It is also possible to form a surface having a different mixed crystal ratio by forming a step by etching, and form a desired epitaxial layer on this surface to form a light emitting element section or a light receiving element section. 13 and 14 show only the light emitting element portions 23 and 24. The light receiving element portions 21 and 22 are formed on the back side or the front side thereof. In this example, p-G
forming a p-GaAlAs active layer 66 thickness aAs substrate 65 mole fraction y on is sequentially changed from 3.5 to 0.05 consists of a hundred μm of Ga _1-y Al y As, the p -Ga
The AlAs active layer 66 is obliquely cut or formed in a step shape. In the case of FIG. 13, the n-GaAlAs confinement layer 6 having a thickness of 1.0 μm is epitaxially grown on the p-GaAlAs active layer 66 having the inclined surface.
7. An n ⁺ -GaAs surface layer 68 having a thickness of 1.5 μm is sequentially formed. The n-GaAlAs confinement layer 67 and the n ⁺ -GaAs surface layer 68 are provided in the light emitting element portions 23, 2 respectively.
An insulating film 69 electrically separates the four. The center of the n ⁺ -GaAs surface layer 68 is removed in a circular shape. The cathode electrode 31 is formed on the n ⁺ -GaAs surface layer 68, and the p-GaAs substrate 65 is formed.
An anode electrode 32 is provided on the back surface of the. Therefore, when a predetermined current is applied between the cathode electrode 31 and the anode electrode 32, light (transmitted light 35: wavelength λ _A ,
Emits a wavelength λ _B ). In the case of FIG. 14, the p-GaA is used.
All are the same except that the lAs active layers 66 are different in a stepwise manner.

In the above-mentioned embodiment, the light emitting element portion is constituted by the light emitting diode, but it is needless to say that it may be constituted by the semiconductor laser. In this case, in the case of a surface emitting semiconductor laser, the light emitting element section and the light receiving element section can be arranged on the same surface side of the semiconductor substrate.

In the above description, the case where the invention made by the present inventor is mainly applied to the repeater in the optical communication system which is the field of application of the background has been described, but the invention is not limited thereto.

[Brief description of drawings]

FIG. 1 is a perspective view showing a semiconductor chip in an optoelectronic device according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a semiconductor substrate on which a first multilayer growth layer region is formed.

FIG. 3 is a schematic cross-sectional view of a semiconductor substrate in which a second multilayer growth layer region is formed.

FIG. 4 is a schematic cross-sectional view of a semiconductor substrate on which a third multilayer growth layer region is formed.

FIG. 5 is a schematic cross-sectional view of a semiconductor substrate on which a fourth multilayer growth layer region is formed.

FIG. 6 is a schematic cross-sectional view of a semiconductor substrate having electrode materials formed on the front and back surfaces.

FIG. 7 is a schematic cross-sectional view of a semiconductor substrate on which electrodes on a light emitting / light receiving surface side are patterned.

FIG. 8 is a schematic cross-sectional view of a semiconductor substrate having an isolation groove formed on the light emitting / receiving surface side.

FIG. 9 is a schematic cross-sectional view of a semiconductor chip in which a light emitting element section and a light receiving element section are formed.

FIG. 10 is a schematic enlarged cross-sectional view showing a main part of a light emitting element section.

FIG. 11 is a schematic enlarged cross-sectional view showing a main part of a light receiving element section.

FIG. 12 is a front view showing a main part of an optoelectronic device for wavelength division multiplexing communication.

FIG. 13 is a sectional view of a semiconductor chip according to another embodiment of the present invention.

FIG. 14 is a sectional view of a semiconductor chip according to another embodiment of the present invention.

[Explanation of symbols]

1 ... Package, 2 ... Lead, 3 ... Optical cable, 4 ... Package body, 5 ... Lid, 6 ... Receiving cable, 7 ... Transmitting cable, 9 ... Guide, 10 ... Optical demultiplexer, 11 ... Optical multiplexer, 12 , 13, 14, 15 ... Optical fiber, 17 ... Chip carrier, 19 ... Metallized layer, 20 ... Semiconductor chip 21, 22 ... Light receiving element section, 23, 24 ... Light emitting element section, 25, 26 ... Wire, 27 ... Photoelectron Device, 28 ... Reception information, 29 ... Transmission information, 30 ... Semiconductor substrate (n ⁺ -I
nP substrate), 31 ... Cathode electrode, 32 ... Anode electrode, 33 ... Isolation groove, 34 ... Received light, 35 ...
Transmitted light, 41 ... Photoresist film, 42 ... p-InGaA
sP layer, 43 ... Current constriction layer, 44 ... n-InP buffer layer, 45 ... p-InGaAsP active layer, 46 ... p-I
nP confinement layer, 47 ... n-InGaAsP surface layer, 48 ...
Multi-layered growth layer for forming light emitting element part, 50 ... Photoresist film,
51 ... photoresist film, 53 ... ⁿ - -InP buffer ^layer, 54 ... n - -InGaAsP active layer, 55 ... n ^- -
InP layer, 56 ... N ^-- InP window layer, 57 ... Multilayer growth layer for forming light receiving element portion, 58 ... Photoresist film, 60, 61
... electrode material, 62 ... diffusion region, 65 ... p-GaAs substrate, 66 ... p-GaAlAs active layer, 67 ... n-GaA
lAs confinement layer, 68 ... N ⁺ -GaAs surface layer, 69 ... Insulating film.

Claims (3)

[Claims] 1. An optoelectronic device, wherein one or more light emitting element portions and one or more light receiving element portions are provided on the same surface side of a single semiconductor substrate. 2. The light emitting element section and the light receiving element section are respectively provided in plurality, and the plurality of light receiving element sections have a structure for receiving lights of different emission wavelengths, respectively. The optoelectronic device according to claim 1, wherein the optoelectronic device has a structure that emits light having different emission wavelengths. 3. A package, a semiconductor substrate arranged in the package and having a plurality of light emitting element portions and a plurality of light receiving element portions, respectively, and fixed to the package and guiding light from outside the package to the light receiving element portion. An input optical fiber, an output optical fiber that is fixed to the package and guides light emitted from the light emitting element to the outside of the package, and an inner end that extends inside and outside the package and has an inner end that is the semiconductor substrate. A plurality of leads electrically connected to a predetermined electrode of the optoelectronic device.