JPH0567071B2 - - Google Patents

Info

Publication number
JPH0567071B2
JPH0567071B2 JP62146608A JP14660887A JPH0567071B2 JP H0567071 B2 JPH0567071 B2 JP H0567071B2 JP 62146608 A JP62146608 A JP 62146608A JP 14660887 A JP14660887 A JP 14660887A JP H0567071 B2 JPH0567071 B2 JP H0567071B2
Authority
JP
Japan
Prior art keywords
pattern
resistance
resistance value
patterns
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62146608A
Other languages
Japanese (ja)
Other versions
JPS63310153A (en
Inventor
Hidenori Egawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62146608A priority Critical patent/JPS63310153A/en
Publication of JPS63310153A publication Critical patent/JPS63310153A/en
Publication of JPH0567071B2 publication Critical patent/JPH0567071B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄膜抵抗パターンの作成方法に関し、
特にCADシステムを用いた薄膜抵抗パターンの
作成方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for creating a thin film resistor pattern.
In particular, it relates to a method for creating thin film resistor patterns using a CAD system.

〔従来の技術〕[Conventional technology]

従来、この種の薄膜抵抗パターン作成方法とし
ては、入力されたパラメーターより、矩形或い
は、L形、ハツト形等のパターン形状を自動作成
するものがあるが、波形、ジグザグ形あるいはラ
ダー形等の比較的形状の複雑なパターンについて
は、パターンの各折れ曲り点の座標をすべて設計
者が指定する方法で行なつていた。
Conventionally, this type of thin film resistor pattern creation method automatically creates a pattern shape such as a rectangle, L shape, or hat shape based on input parameters. For patterns with complex shapes, the designer specified all the coordinates of each bending point of the pattern.

第3図は、従来の薄膜パターン形成方法作業フ
ロー図である。最初にステツプ21で、大まかな
抵抗の予備計算を行なつて、形状、大きさ等の目
安を把握しておき、次にステツプ22でパターン
の全ての折れ曲がり点の座標の指定を伴うパター
ンレイアウトを行なう。次に、ステツプ23で描
いたパターンについて、抵抗値計算を行い、ステ
ツプ24で目標値との比較を行なう。目標値と合
つていれば終了となり、目標値と異つていれば、
ステツプ25で修正を行なうという作業を繰り返
えす。即ち、基本的にCADを使用してはいるが、
パターンが自動作成されず、作成されたパターン
の抵抗値は別途計算を行うまで不明である。
FIG. 3 is a work flow diagram of a conventional thin film pattern forming method. First, in step 21, perform a rough preliminary calculation of resistance to get a rough idea of the shape, size, etc., and then, in step 22, create a pattern layout that involves specifying the coordinates of all bending points of the pattern. Let's do it. Next, the resistance value is calculated for the pattern drawn in step 23, and compared with the target value in step 24. If it matches the target value, it ends; if it differs from the target value,
The operation of making the correction in step 25 can be repeated. In other words, although CAD is basically used,
The pattern is not automatically created, and the resistance value of the created pattern is unknown until a separate calculation is performed.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上述した従来のパターン形成方
法は、抵抗パターン形状を作成したステツプ22
の段階で、この抵抗パターンが、どの範囲の抵抗
値を持ち得るかの計算が別に必要となり、目標と
する値の範囲となるまでパターン修正及び抵抗計
算の過程を繰り返えし行なわなければならず、結
果的に多くの工数を必要とし、かつ、ミスも招き
易いという欠点がある。
However, in the conventional pattern forming method described above, the step 22 in which the resistor pattern shape is created is
At this stage, it is necessary to separately calculate the range of resistance values that this resistance pattern can have, and the process of pattern modification and resistance calculation must be repeated until the target value range is achieved. However, this method requires a large number of man-hours and is prone to errors.

本発明の目的は、このような欠点を除き、薄膜
抵抗パターンの細部に渡たる複雑な設計作業を、
対角2点を繰り返えし指定するという単純作業に
置き替えることにより、作業性を飛躍的に向上さ
せた薄膜抵抗パターン作成方法を提供することに
ある。
The purpose of the present invention is to eliminate such drawbacks and to simplify the detailed and complicated design work of thin film resistor patterns.
It is an object of the present invention to provide a thin film resistor pattern creation method that dramatically improves workability by replacing the simple work of repeatedly specifying two diagonal points.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の薄膜抵抗パターン形状の作成方法は、
CADシステムの座標入力装置を用いて、デイス
プレイの所定平面上で対角の2点を指定すること
によつて与えられる仮想矩形領域を設定し、この
仮想矩形領域を埋め尽くす形で、波形、ジグザグ
形、ラダー形あるいは長方形等の抵抗パターン形
状を発生させ、これら抵抗パターンの抵抗値のう
ち所定値に最も近くて低い側の抵抗パターンを指
示し、さらにその残抵抗値について前記対角2点
に続く対角2点で同様な抵抗パターンを指示し、
これら抵抗パターンの和の抵抗値が所望抵抗値に
なるまで順次繰り返すことにより、抵抗形状の全
体を作成することを特徴とする。
The method for creating a thin film resistance pattern shape of the present invention is as follows:
Using the coordinate input device of the CAD system, set a virtual rectangular area given by specifying two diagonal points on a predetermined plane of the display, and create waveforms, zigzags, etc. that fill this virtual rectangular area. A resistance pattern shape such as a shape, a ladder shape, or a rectangle is generated, and the resistance pattern on the lowest side that is closest to a predetermined value is specified among the resistance values of these resistance patterns, and the residual resistance value is determined at the two diagonal points. Indicate a similar resistance pattern at the next two diagonal points,
It is characterized in that the entire resistance shape is created by sequentially repeating the process until the resistance value of the sum of these resistance patterns reaches a desired resistance value.

〔実施例〕〔Example〕

次に本発明を図面により詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.

第1図は本発明の一実施例を説明するフロー
図、第2図は本実施例の薄膜抵抗パターン6の一
例の平面図である。本実施例のパターンは、第2
図のように、各パターンA〜Dの種類とその対角
位置の座標ce1〜5を指定することにより所望の
抵抗値が得られるようにしている。パターンA1
A2はステツプ状に抵抗値を設定する横のジグザ
グパターン、パターンB1〜B3は同様のステツプ
状からなる縦のジグザグパターン、パターンC1
〜C3ははしご形パターン、パターンD1〜D4はベ
タ(平面)パターンを示し、パターンA1,B1
C1およびD1の間で所望抵抗値を得ようとするも
のである。はしご形パターンC、ベタパターンD
は、レーザトリミングを用いてはしごのステツプ
あるいは平面領域を切断して抵抗値を微細調整す
ることができる個所である。また、パターンA2
B2,B3,C2,C3,D2〜D4はダミーパターンとし
て抵抗パターンを示しているが、抵抗パターン以
外の物でかまわない。
FIG. 1 is a flowchart for explaining one embodiment of the present invention, and FIG. 2 is a plan view of an example of the thin film resistor pattern 6 of this embodiment. The pattern of this example is the second
As shown in the figure, a desired resistance value can be obtained by specifying the type of each pattern A to D and its diagonal coordinates ce1 to ce5. Pattern A 1 ,
A 2 is a horizontal zigzag pattern that sets the resistance value in steps, patterns B 1 to B 3 are vertical zigzag patterns made of similar steps, and pattern C 1
~ C3 represents a ladder pattern, patterns D1 ~ D4 represent solid (plane) patterns, and patterns A1 , B1 ,
The objective is to obtain a desired resistance value between C 1 and D 1 . Ladder pattern C, solid pattern D
This is where laser trimming can be used to cut steps or flat areas of the ladder to fine tune the resistance value. Also, pattern A 2 ,
B 2 , B 3 , C 2 , C 3 , D 2 to D 4 are resistance patterns shown as dummy patterns, but they may be other than resistance patterns.

第1図のフロー図において、最初にステツプ11
で、抵抗値、シート抵抗値範囲、精度、ワツト
数、パターン幅等の必要パターンの入力を行な
い、次のステツプ12で、タブレツト等の座標入力
装置より、例えば座標ce1,ce2(第2図)のよ
うに、対角2点の指定を行なう。ステツプ13
で、それにより決定される仮想矩形領域内を埋め
尽す形で抵抗パターン形状の自動作成を行い、ス
テツプ14で残抵抗値分についての形状比(NS)
の表示を行い、さらにステツプ15で目標値に達
したかどうかの判定を行い、目標値に達していれ
ば終了し、目標値に達していなければステツプ1
2に戻り、それまで作成されている抵抗パターン
の終点を含む対角2点の指定を再度行なう。
In the flowchart shown in Figure 1, step 11 is the first step.
Then, input the required pattern such as resistance value, sheet resistance value range, accuracy, wattage, pattern width, etc., and in the next step 12, input the coordinates ce1, ce2, for example, from a coordinate input device such as a tablet (Fig. 2). Specify two diagonal points as shown below. Step 13
Then, a resistance pattern shape is automatically created to fill the virtual rectangular area determined thereby, and in step 14, the shape ratio (NS) for the residual resistance value is calculated.
Then, in step 15, it is determined whether the target value has been reached. If the target value has been reached, the process ends, and if the target value has not been reached, the process returns to step 1.
Returning to step 2, the two diagonal points including the end point of the resistance pattern created up to that point are designated again.

このように本実施例では、対角2点を指定する
操作を繰り返えすことで、抵抗パターンを作成し
ていくのが、その際パターンの自動作成は、その
パターン部分について、波形或いはジグザグ形、
或いはラダー形のどのような形にするかの選択が
可能であるようにしてあり、さらにこの作業全体
がシステムとの対話で行えるようになつている。
As described above, in this embodiment, a resistance pattern is created by repeating the operation of specifying two diagonal points.At this time, the pattern is automatically created by creating a waveform or zigzag shape for the pattern part. ,
Alternatively, it is possible to select a ladder shape, and furthermore, this entire work can be done through interaction with the system.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、対角2点を指定
する操作を繰り返えすだけで、パターンが作成さ
れていくので、レイアウト性に富んでおり、周囲
のパターンの状況に合わせ、そのすき間に沿つて
抵抗パターンを作成していくことが容易に出来
る。また、レイアウト中に、目標とすべき形状比
(NS)の値が逐次表示されるので、設計者は、抵
抗パターンに関する諸計算から一切解放されると
いう効果がある。
As explained above, in the present invention, a pattern is created by simply repeating the operation of specifying two diagonal points, so it is rich in layout properties, and the gaps can be filled in according to the situation of the surrounding patterns. It is easy to create a resistance pattern along the lines. Furthermore, since the target shape ratio (NS) value is displayed sequentially during the layout, the designer is freed from all calculations related to the resistance pattern.

さらに、パターンの詳細部は、すべてプログラ
ムにより自動作成されるため、従来方法に対し約
10倍以上の高速処理が可能である。
Furthermore, since all the detailed parts of the pattern are automatically created by the program, it is much easier to use than conventional methods.
It is possible to process at least 10 times faster.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を説明するフロー
図、第2図は第1図により作成されたパターンの
一例の平面図、第3図は従来の作業工程の一例を
示すフロー図である。 ce1〜5……座標、A12……横ジグザグパタ
ーン、B13……縦ジグザグパターン、C13……
はしご形パターン、D14……ベタパターン、6
……薄膜抵抗パターン、11〜15,21〜24
……ステツプ。
FIG. 1 is a flowchart explaining an embodiment of the present invention, FIG. 2 is a plan view of an example of a pattern created according to FIG. 1, and FIG. 3 is a flowchart showing an example of a conventional work process. . ce1~5...Coordinates, A1 , 2 ...Horizontal zigzag pattern, B1 ~ 3 ...Vertical zigzag pattern, C1 ~ 3 ...
Ladder pattern, D 1 to 4 ... Solid pattern, 6
...Thin film resistance pattern, 11-15, 21-24
...Step.

Claims (1)

【特許請求の範囲】[Claims] 1 CADシステムの座標入力装置を用いて、デ
イスプレイの所定平面上で対角の2点を指定する
ことによつて与えられる仮想矩形領域を設定し、
この仮想矩形領域を埋め尽くす形で、波形、ジグ
ザグ形、ラダー形あるいは長方形等の抵抗パター
ン形状を発生させ、これら抵抗パターンの抵抗値
のうち所定値に最も近くて低い側の抵抗パターン
を指示し、さらにその残抵抗値について前記対角
2点に続く対角2点で同様な抵抗パターンを指示
し、これら抵抗パターンの和の抵抗値が所望抵抗
値になるまで順次繰り返すことにより、抵抗形状
の全体を作成することを特徴とする薄膜抵抗パタ
ーン形状の作成方法。
1 Using the coordinate input device of the CAD system, set a virtual rectangular area given by specifying two diagonal points on a predetermined plane of the display,
A waveform, zigzag, ladder, rectangle, or other resistance pattern shape is generated to fill this virtual rectangular area, and the resistance pattern with the lowest resistance value closest to a predetermined value among these resistance patterns is specified. , Furthermore, for the residual resistance value, a similar resistance pattern is specified at two diagonal points following the two diagonal points, and this is repeated sequentially until the resistance value of the sum of these resistance patterns reaches the desired resistance value. A method for creating a thin film resistor pattern shape, characterized by creating the entire shape.
JP62146608A 1987-06-11 1987-06-11 Formation of thin-film resistor pattern Granted JPS63310153A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62146608A JPS63310153A (en) 1987-06-11 1987-06-11 Formation of thin-film resistor pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62146608A JPS63310153A (en) 1987-06-11 1987-06-11 Formation of thin-film resistor pattern

Publications (2)

Publication Number Publication Date
JPS63310153A JPS63310153A (en) 1988-12-19
JPH0567071B2 true JPH0567071B2 (en) 1993-09-24

Family

ID=15411577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62146608A Granted JPS63310153A (en) 1987-06-11 1987-06-11 Formation of thin-film resistor pattern

Country Status (1)

Country Link
JP (1) JPS63310153A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03208176A (en) * 1990-01-09 1991-09-11 Mitsubishi Electric Corp Layout editor device which can automatically generate resistance

Also Published As

Publication number Publication date
JPS63310153A (en) 1988-12-19

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