JPH0566978B2 - - Google Patents
Info
- Publication number
- JPH0566978B2 JPH0566978B2 JP60221351A JP22135185A JPH0566978B2 JP H0566978 B2 JPH0566978 B2 JP H0566978B2 JP 60221351 A JP60221351 A JP 60221351A JP 22135185 A JP22135185 A JP 22135185A JP H0566978 B2 JPH0566978 B2 JP H0566978B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- silicon
- based insulating
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229920002545 silicone oil Polymers 0.000 description 5
- 238000009530 blood pressure measurement Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Description
＜産業上の利用分野＞
本発明は、過大圧保護機構を備えた小形、高感
度の圧力測定装置の製造方法に関し、特にダイア
フラム部分の製造方法に関する。
＜従来の技術＞
従来、例えば圧力の測定に用いられるダイアフ
ラム部分製造方法としては、
(1) 金属の圧延材を金型等で成型加工する。
(2) 単結晶シリコンをエツチングして加工する。
等の方法が知られている。
＜発明が解決しようとする問題点＞
しかしながら、上記従来のダイアフラムにおい
てはいずれの製造方法においても1μｍ以下の厚
さのものを作製することは困難であり、このこと
は小形の圧力センサ作製上のネツクとなつてい
る。本発明は薄膜によりダイアフラムを形成する
とともに過大圧防止機構を有する小形の圧力測定
装置の製造方法を提供することを目的とする。
＜問題点を解決するための手段＞
上記問題点を解決するための本発明の構成は、
(a) 導圧孔を有するシリコン基板の一方の面に前
記導圧孔の周りを除いて第１のシリコン系絶縁
膜を形成する工程。
(b) 前記シリコン系絶縁膜が除去されたシリコン
基板の表面部分に第１の金属膜を形成する工
程。
(c) 前記第１金属膜を含む基板上に第２のシリコ
ン系絶縁膜を形成する工程。
(d) 前記第２のシリコン系絶縁膜上の前記第１金
属膜に対向して第２の金属膜を形成する工程。
(e) 前記導圧孔から封液を圧入し前記第１金属膜
と前記第２シリコン系絶縁膜の間に所定のギヤ
ツプを形成する工程。
を含むことを特徴とするものである。
＜実施例＞
第１図ａ〜ｄは本発明の圧力測定装置の製造方
法の一実施例を示す工程図である。
工程ａにおいて、１は円筒状の剛体（この例で
はシリコンを用いる）で、その中央部に導圧孔２
が設けられている。３は剛体の一方の表面に熱酸
化により形成された第１のシリコン系絶縁膜から
なるSiO2層で、導圧孔２の周囲のわずかな部分
を残して形成されている。
工程ｂにおいて、導圧孔２の周りにSiO2層３
を除いてスパツタ等により略0.1μｍの厚さのCr層
４およびAu層５からなる第１金属膜を形成する。
工程ｃにおいて、Au層５を覆つてスパツタ等
により略1μｍの厚さの第２のシリコン系絶縁膜
からなるSiO2層６を形成し、このSiO2層６の上
にさらにCr層７、Au層８からなる第２金属膜を
それぞれ0.1μｍ程度の厚さに形成する。
次に工程ｄにおいて導圧孔２から例えばシリコ
ンオイル等を封入してバイアス圧力Ｐを加える
と、SiO2層６はAu層５とは結合力が弱いため剥
がれ、これらの層の間にギヤツプ４０が生じダイ
アフラムとなる。このSiO2層６とAu層５ではコ
ンデンサを形成しており、上方のAu層８と下方
のAu層５を電極としてこのコンデンサの容量の
変化を検出することが出来る。そしてバイアス圧
力以上の過大圧がダイアフラムに加わつた場合は
SiO2層６がAu層５に密着するが、導圧孔の径を
微小に加工しておけば過大圧に対して破損するこ
とがない。
第２図は剛体１１の両方の面にダイアフラムを
形成する製作例を示すもので、この例の場合は貫
通孔２を設けた剛体１０の側面に導圧孔１２を設
け、この導圧孔１２から剛体１１の両方の面に設
けた薄膜にシリコンオイル１２を所定の圧力によ
り圧入し、両側にダイアフラム１３，１３を形成
したものである。
なお、ダイアフラム１３，１３は上記第１図と
同様の方法により製作し、導圧孔１２からシリコ
ンオイルを所定のバイアス圧力で封入した後は封
止栓１４によつて封止する。
上記ダイアフラムを形成した剛体１１を図示し
ない容器に収納し、左右のダイアフラム１３，１
上記ダイアフラムを形成した剛体１１を図示し
ない容器に収納し、左右のダイアフラム１３，１
３に圧力を加えることにより差圧計として利用す
ることが出来る。
その場合、圧力差による容量変化は次の式で現
わすことが出来る。
P1−P2＝（C1−C2）／（C1＋C2）
第３図はこの発明による圧力測定装置のダイア
フラムを過大圧防止機構として利用したもので、
要部断面図を示すものである。この例においては
両側にダイアフラム３１，３１を有する収納容器
３０の中に、圧力測定用シリコンダイアフラム２
１を内臓する剛体２０が気密に組込まれており、
この剛体２０の両側には略同体積の室Ｄ、Ｅが形
成されシリコンオイルが封入されている。
図において剛体２０内の室Ｆ、Ｇはシリコンダ
イアフラム２１により気密に仕切られており、そ
れぞれの室Ｆ、Ｇにはシリコンオイルにより両側
の室に同一の圧力が加えられ、過大圧防止機構と
してのダイアフラム２２が形成されている。
剛体２０の導圧孔４１を封止するので、シリコ
ンダイアフラム２１に印加される力が抑制され、
シリコンダイアフラム２１が破損することがな
い。なお、この例における薄膜は電極としての機
能は不要なので第１図に示すAu層の薄膜５，８
は必ずしも必要ではない。
また、本実施例におけるダイアフラムの薄膜は
シリコン、SiC、Si3N4膜等でもよい。
＜発明の効果＞
以上、実施例とともに具体的に説明したように
本発明によれば、比較的柔軟なダイアフラムを得
ることが出来るので、
(1) 高感度の圧力センサを得ることができる。
(2) 直径10〜100μｍ程度の小形のダイアフラム
が製作可能となり、従来製作困難であつた小形
の圧力センサが実現でき、生体等の圧力計測な
ど幅広い応用が可能となる。
(3) バイアス圧力を調整することにより、過大圧
に対する調整が可能である。
<Industrial Application Field> The present invention relates to a method for manufacturing a small, highly sensitive pressure measuring device equipped with an overpressure protection mechanism, and particularly to a method for manufacturing a diaphragm portion. <Prior Art> Conventionally, for example, methods for manufacturing a diaphragm part used for pressure measurement include: (1) Molding a rolled metal material using a mold or the like. (2) Etching and processing single crystal silicon. Methods such as the following are known. <Problems to be Solved by the Invention> However, it is difficult to manufacture the above-mentioned conventional diaphragms with a thickness of 1 μm or less using any of the manufacturing methods, and this makes it difficult to manufacture small pressure sensors. It has become a netsuku. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a small pressure measuring device having a diaphragm formed of a thin film and having an overpressure prevention mechanism. <Means for Solving the Problems> The structure of the present invention for solving the above problems is as follows: (a) A silicon substrate having a pressure-conducting hole has a first surface on one surface except for the area around the pressure-conducting hole. The process of forming a silicon-based insulating film. (b) A step of forming a first metal film on the surface portion of the silicon substrate from which the silicon-based insulating film has been removed. (c) forming a second silicon-based insulating film on the substrate including the first metal film; (d) forming a second metal film opposite to the first metal film on the second silicon-based insulating film; (e) A step of pressurizing a sealing liquid through the pressure guiding hole to form a predetermined gap between the first metal film and the second silicon-based insulating film. It is characterized by including. <Example> Figures 1a to 1d are process diagrams showing an example of the method for manufacturing a pressure measuring device of the present invention. In step a, 1 is a cylindrical rigid body (silicon is used in this example), and a pressure guiding hole 2 is provided in the center of the body.
is provided. Reference numeral 3 denotes an SiO 2 layer consisting of a first silicon-based insulating film formed on one surface of the rigid body by thermal oxidation, leaving only a small portion around the pressure-conducting hole 2. In step b, a SiO 2 layer 3 is formed around the pressure guiding hole 2.
A first metal film consisting of a Cr layer 4 and an Au layer 5 with a thickness of approximately 0.1 μm is formed by sputtering or the like. In step c, a SiO 2 layer 6 made of a second silicon-based insulating film with a thickness of approximately 1 μm is formed by sputtering or the like to cover the Au layer 5, and a Cr layer 7 and an Au layer are further formed on this SiO 2 layer 6. A second metal film consisting of layers 8 is formed to have a thickness of about 0.1 μm. Next, in step d, when silicone oil or the like is sealed through the pressure guiding hole 2 and a bias pressure P is applied, the SiO 2 layer 6 peels off from the Au layer 5 due to its weak bonding strength, and a gap 40 is formed between these layers. is formed and becomes a diaphragm. The SiO 2 layer 6 and the Au layer 5 form a capacitor, and changes in the capacitance of this capacitor can be detected using the upper Au layer 8 and the lower Au layer 5 as electrodes. If excessive pressure above the bias pressure is applied to the diaphragm,
The SiO 2 layer 6 is in close contact with the Au layer 5, but if the diameter of the pressure-conducting hole is made minute, it will not be damaged by excessive pressure. FIG. 2 shows a production example in which diaphragms are formed on both sides of the rigid body 11. In this example, a pressure guiding hole 12 is provided on the side surface of the rigid body 10 provided with the through hole 2. Silicone oil 12 is press-fitted under a predetermined pressure into thin films provided on both surfaces of a rigid body 11 to form diaphragms 13 on both sides. The diaphragms 13, 13 are manufactured by the same method as shown in FIG. The rigid body 11 forming the diaphragm is stored in a container (not shown), and the left and right diaphragms 13,1 are stored in the container (not shown).
By applying pressure to 3, it can be used as a differential pressure gauge. In that case, the capacitance change due to pressure difference can be expressed by the following equation. P 1 −P 2 =(C 1 −C 2 )/(C 1 +C 2 ) FIG. 3 shows a pressure measuring device according to the present invention in which the diaphragm is used as an overpressure prevention mechanism.
It shows a cross-sectional view of main parts. In this example, a silicon diaphragm 2 for pressure measurement is placed in a storage container 30 having diaphragms 31, 31 on both sides.
A rigid body 20 containing 1 is airtightly incorporated,
Chambers D and E of approximately the same volume are formed on both sides of this rigid body 20 and are filled with silicone oil. In the figure, chambers F and G within the rigid body 20 are airtightly partitioned by a silicone diaphragm 21, and the same pressure is applied to both chambers by silicone oil to act as an overpressure prevention mechanism. A diaphragm 22 is formed. Since the pressure guiding hole 41 of the rigid body 20 is sealed, the force applied to the silicon diaphragm 21 is suppressed,
The silicon diaphragm 21 will not be damaged. Note that the thin film in this example does not need to function as an electrode, so the thin films 5 and 8 of the Au layer shown in FIG.
is not necessarily necessary. Further, the thin film of the diaphragm in this embodiment may be a silicon, SiC, Si 3 N 4 film, or the like. <Effects of the Invention> As described above in detail with the embodiments, according to the present invention, a relatively flexible diaphragm can be obtained, so that (1) a highly sensitive pressure sensor can be obtained. (2) It is now possible to manufacture a small diaphragm with a diameter of about 10 to 100 μm, making it possible to realize a small pressure sensor that was difficult to manufacture in the past, and enabling a wide range of applications such as pressure measurement in living organisms. (3) Adjustment against excessive pressure is possible by adjusting the bias pressure.
第１図ａ〜ｄは本発明の圧力測定装置の製造方
法のダイアフラムを製作する工程を示す説明図、
第２図は本発明の方法により作製した圧力測定装
置のダイアフラムを差圧計として用いた例を示す
断面図、第３図は本発明の圧力測定装置の製造方
法により作製したダイアフラムを過大圧防止機構
として用いた例を示す断面図である。
１，１１……剛体（シリコン）、２，１２……
導圧孔、３，６……SiO2層、４，７……Cr、５，
８……Au、１５……シリコンオイル、２１……
シリコンダイアフラム、３０……収納容器。
FIGS. 1a to 1d are explanatory diagrams showing the steps of manufacturing a diaphragm in the method for manufacturing a pressure measuring device of the present invention,
FIG. 2 is a cross-sectional view showing an example in which the diaphragm of the pressure measuring device manufactured by the method of the present invention is used as a differential pressure gauge, and FIG. It is a sectional view showing an example used as a. 1, 11... Rigid body (silicon), 2, 12...
Pressure conducting hole, 3, 6...SiO 2 layer, 4, 7...Cr, 5,
8...Au, 15...Silicone oil, 21...
Silicon diaphragm, 30...storage container.
Claims (1)
に前記導圧孔の周りを除いて薄膜技術により第
１のシリコン系絶縁膜を形成する工程。 (b) 前記シリコン系絶縁膜が除去されたシリコン
基板の表面部分に薄膜技術により第１の金属膜
を形成する工程。 (c) 前記第１金属膜を含む基板上に薄膜技術によ
り第２のシリコン系絶縁膜を形成する工程。 (d) 前記第２のシリコン系絶縁膜上の前記第１金
属膜に対向して薄膜技術により第２の金属膜を
形成する工程。 (e) 前記導圧孔から封液を圧入し前記第１金属膜
と前記第２シリコン系絶縁膜の間に所定のギヤ
ツプを形成する工程。 を含むことを特徴とする圧力測定装置の製造方
法。[Scope of Claims] 1 (a) A step of forming a first silicon-based insulating film on one surface of a silicon substrate having a pressure-conducting hole except for the area around the pressure-conducting hole using a thin film technique. (b) A step of forming a first metal film by thin film technology on the surface portion of the silicon substrate from which the silicon-based insulating film has been removed. (c) forming a second silicon-based insulating film on the substrate including the first metal film using thin film technology; (d) forming a second metal film on the second silicon-based insulating film, facing the first metal film, using a thin film technique; (e) A step of pressurizing a sealing liquid through the pressure guiding hole to form a predetermined gap between the first metal film and the second silicon-based insulating film. A method of manufacturing a pressure measuring device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22135185A JPS6281539A (en) | 1985-10-04 | 1985-10-04 | Diaphragm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22135185A JPS6281539A (en) | 1985-10-04 | 1985-10-04 | Diaphragm |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6281539A JPS6281539A (en) | 1987-04-15 |
| JPH0566978B2 true JPH0566978B2 (en) | 1993-09-22 |
Family
ID=16765437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22135185A Granted JPS6281539A (en) | 1985-10-04 | 1985-10-04 | Diaphragm |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6281539A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014033099A (en) * | 2012-08-03 | 2014-02-20 | Azbil Corp | Method for producing silicon tube |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6421330A (en) * | 1987-07-16 | 1989-01-24 | Teijin Ltd | Pressure detector |
| JP4882369B2 (en) * | 2005-12-27 | 2012-02-22 | 横浜ゴム株式会社 | Air pressure detection system |
| DE102013102206B4 (en) * | 2013-03-06 | 2016-04-07 | Epcos Ag | Device with stacked functional structures and method of manufacture |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56140231A (en) * | 1980-03-06 | 1981-11-02 | Bosch Gmbh Robert | Pressure measuring gauge |
-
1985
- 1985-10-04 JP JP22135185A patent/JPS6281539A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56140231A (en) * | 1980-03-06 | 1981-11-02 | Bosch Gmbh Robert | Pressure measuring gauge |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014033099A (en) * | 2012-08-03 | 2014-02-20 | Azbil Corp | Method for producing silicon tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6281539A (en) | 1987-04-15 |
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