JPH0565643A - Method for preventing peeling of adhered film for inline type sputtering device and device therefor - Google Patents

Abstract

PURPOSE:To provide a method for preventing the peeling of a film of a dielectric film forming chamber in which the using periods of a shutter and an adhesion preventing sheet or the like are prolonged and the improvement of mass- productivity is attained and to provide the dielectric film forming chamber. CONSTITUTION:The peeling of a dielectric film form a shutter 106 and an adhesion preventing sheet 14 is suppressed with a metallic film. For this purpose, in addition to a main sputtering electrode 103, a sub-sputtering electrode 115 is provided. The sub-sputtering electrode 115 is provided at a position in which metallic sputtering can be executed to the shutter 106 and the adhesion preventing sheet 114. Furthermore, a sub-shutter 118 is provided so as to prevent the staining of a target 104 of the main sputtering electrode 103 at the time of executing sputtering from the sub-sputtering electrode 115.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an in-line type sputtering apparatus used for mass production of thin film products, and more particularly to a method and apparatus for preventing peeling of a dielectric film deposited in a chamber when forming a dielectric film.

[0002]

2. Description of the Related Art In-line type sputtering apparatuses are widely used for mass production of semiconductor products and thin film products such as optical disks and magnetic disks.

The in-line type sputtering apparatus comprises a plurality of independent chambers, each chamber is connected by a rail, and a vacuum valve is provided between the chambers.

A substrate on which a thin film is formed is attached to a carrier described later, and a film is formed in each chamber while the carrier runs on the rail.

Next, a conventional sputtering apparatus chamber will be described with reference to the drawings. FIG. 2 shows a vertical sectional view of a conventional in-line type sputtering apparatus chamber.

In the figure, a sputter electrode 203 is provided on one side wall of a main body 201 via an insulator 202.

Further, a target 204 is attached to the sputter electrode 203. Further, a shield plate 205 is provided to prevent electric discharge from the side wall in the vicinity.

A shutter 206 is provided facing the sputter electrode. The shutter 206 is provided to prevent the film from adhering to the substrate to be formed during the cleaning and sputtering of the surface of the target 204.

Therefore, when actually forming a film on a substrate,
The shutter position is shifted by the shutter rotation jig 207.

A rail 208 is provided in the lower portion inside the chamber integrally with the main body, and a bearing 210 attached to a carrier 209 is fitted into the rail 208. The lower part of the carrier 208 has teeth, and the gear 211 moves the carrier 209.

A vacuum shield portion 212 formed by an O-ring is provided on the above-mentioned shutter 206, gear 211, and the like, which project outside the chamber.

The substrate 213 for film formation is attached to the carrier 209, and moves in each chamber together with the carrier to form a film.

A deposition preventive plate 214 is provided on the exposed portion of the inner wall of the chamber to prevent film formation on the side wall of the main body.

The film adhered to the shutter 206 or the deposition preventive plate 214 varies depending on the material of the film and the film forming conditions, but is peeled off when a certain amount is reached. Are being replaced.

[0015]

When mass production is carried out in the above-mentioned conventional sputtering apparatus chamber, the film adhered to the shutter or the adhesion-preventing plate is peeled off and adheres to the film-forming substrate to cause a defect as described above. It's converted regularly so that it never happens.

However, when the period until the replacement is short, not only the cost for cleaning the deposition preventive plate and the shutter but also
The time loss required to restore the vacuum state released at the time of replacement is large, and there is a drawback that mass productivity is impaired. In addition, such a defect was more remarkable in the chamber for forming the dielectric film.

An object of the present invention is to provide a method and apparatus for removing an adhered film, which enables the use of the shutter and the deposition preventive plate for a long period of time and prevents the generation of dust.

[0018]

In order to achieve the above object, the method for preventing the adhered film peeling of an in-line type sputter electrode according to the present invention is an in-line type sputter having a shutter, a deposition preventive plate and the like in a film forming chamber. In the apparatus, the dielectric film adhered to the shutter, the adhesion preventing plate, etc. is pressed down by a metal film.

The adhered film peeling prevention apparatus of the in-line type sputtering apparatus according to the present invention is provided in the film forming chamber.
An in-line type sputtering device having a sputter electrode, a shutter, and an adhesion preventive plate, wherein a sub-sputter electrode is provided at least at a position where sputtering can be performed on the shutter, and a sub-shutter is provided at a position in close contact with the sputter electrode. ..

[0020]

In the method of the present invention, the dielectric film adhered to the shutter, the deposition preventive plate and the like in the dielectric film forming chamber is pressed down by the metal film.

In a dielectric film forming chamber for realizing such a method, a sub-sputtering electrode is provided on the shutter at a position where sputtering is possible, and a sub-shutter is provided at a position in close contact with the sputtering electrode.

[0022]

The present invention will be described below with reference to the drawings.

FIG. 1 is a vertical sectional view showing an embodiment of the present invention.

In the figure, on one side wall of the main body 101,
A main sputtering electrode 103 is provided via an insulator 102.

The target 1 is attached to the main sputtering electrode 103.
04 is attached. What is used as the target is determined by what is manufactured, but for example, a dielectric such as SiN, SiO ₂ , Ta ₂ O ₅ is used.

In some cases, a dielectric film may be formed by performing reactive sputtering in an oxygen or nitrogen atmosphere using a Ta or Si target.

Unlike the metal film, the dielectric film tends to become fine dust when it reaches a certain thickness and is peeled off.

A shield plate 105 is provided to prevent discharge from the side wall in the vicinity. A shutter 106 is provided so as to face the main sputtering electrode.

The shutter 106 is provided to prevent the film from adhering to the substrate to be formed during the cleaning sputtering of the target 104. Therefore, this shutter 106
Since the distance from the main sputtering electrode is short, the amount of deposited film is large and dust due to the above-mentioned peeling is easily generated even in a short-time cleaning sputtering.

When the film is actually formed on the substrate, the shutter rotating jig 107 shifts the position of the shutter 106.

The sub-sputtering electrode 115 is formed by moving the shutter 106 from the main sputtering electrode to the shutter rotating jig 107.
The insulator 116 is provided on the side wall of the chamber so as to be opposed to the position when the position is shifted by.

Target 117 of sub-sputtering electrode 115
Is a relatively viscous metallic body such as Au, A
It is preferable to use 1, Ni, Ti or the like.

That is, metal sputtering is periodically performed on the shutter 106 from the auxiliary sputtering electrode, and the shutter 1
The peeling of the dielectric film adhering to 06 is suppressed.

When this metal sputtering is performed, sputtered particles are scattered at various angles as a property of sputtering and adhere to the surface of the target 104 of the main sputtering electrode 103. A sub-shutter 118 is provided to prevent deposition of a film by metal sputtering of the sub-sputtering electrode. The sub shutter 118 can be moved similarly to the shutter.

As described above, by using the metal film to suppress the peeling of the dielectric film of the shutter without adversely affecting the main sputtering electrode target, the sputtering chamber can be used for a long period of time without dust due to the peeling of the dielectric film. Can be used, and the mass production effect of in-line type sputtering can be improved.

A shield plate 119 is provided to prevent abnormal discharge between the sub-electrode and the side wall in the vicinity thereof.

A rail 108 is provided at the lower part inside the chamber so as to be connected to the main body 101.
A bearing 110 attached to the rail 108
Is fitted into. The lower part of the carrier 109 is toothed so that it can be moved by a gear 111.

A vacuum shield portion 112 such as an O-ring is provided on the portion such as the shutter rotating jig 107 and the gear 111 which projects to the outside of the chamber.

The substrate 113 on which the film is formed as described above is attached to the carrier 109 and moves between the chambers together with the carrier 109.

A deposition preventing plate 114 is provided on the exposed portion of the inner wall of the chamber. The deposition preventive plate 114 prevents the film from adhering to the side wall of the main body of the sputtering chamber, and the film adheres when the film is formed on the substrate 113.

Therefore, although the adhesion amount is smaller than that of the shutter 106 described above, peeling of the film occurs similarly to the shutter due to long-term use, which causes dust defects. This peeling state is particularly problematic in the case of a dielectric film as in the case of a shutter.

For this reason, metal sputtering is also performed periodically by the sub-sputtering electrode 117 on the adhesion-preventing plate 114 to hold the dielectric adhered film.

When metal sputtering is performed, it is preferable to use the sub-shutter 118 and to remove the film-forming substrate and carrier.

In the present invention, the dielectric film forming chamber having a particularly remarkable effect has been described, but the same effect can also be applied to the film forming chamber of a metal body such as W or Mo which is relatively hard and brittle.

[0045]

As described above, according to the present invention, by providing the sub-sputtering electrode equipped with the metal target and the sub-shutter of the main sputtering electrode in the deposition chamber for the dielectric film, the target of the main sputtering electrode can be obtained. It is possible to sputter metal to prevent peeling of the dielectric film adhered to the shutter and the adhesion preventive plate, and it is possible to significantly extend the replacement period of the shutter and the adhesion preventive plate.
It has the effect of significantly improving mass productivity.

[Brief description of drawings]

FIG. 1 is a vertical cross-sectional view showing an in-line type dielectric film forming chamber of the present invention.

FIG. 2 is a vertical sectional view of a conventional in-line type film forming chamber.

[Explanation of symbols]

 101 Chamber Main Body 102 Insulator 103 Main Sputtering Electrode 104 Target 105 Shield Plate 106 Shutter 107 Shutter Rotating Jig 108 Rail 109 Carrier 110 Bearing 111 Gear Wheel 112 O-ring 113 Film Forming Substrate 114 Deposition Plate 115 Sub Sputtering Electrode 116 Insulator 117 Metal Target 118 Sub-shutter 119 Shield plate 201 Chamber body 202 Insulator 203 Sputtering electrode 204 Target 205 Shield plate 206 Shutter 207 Shutter rotation jig 208 Rail 209 Carrier 210 Bearing 211 Gear wheel 212 O-ring 213 Film-forming substrate 214 Adhesion prevention plate

Claims (2)

[Claims] 1. An in-line type sputtering apparatus having a shutter, an adhesion preventive plate and the like in a film forming chamber, wherein a dielectric film adhered to the shutter, the adhesion preventive plate and the like is pressed by a metal film. Adhesive film peeling prevention method for in-line type sputtering equipment. 2. A sputtering electrode in a film forming chamber,
An in-line type sputtering device having a shutter and an adhesion preventive plate, characterized in that a sub-sputtering electrode is provided at least at a position where sputtering can be performed on the shutter, and a sub-shutter is provided at a position in close contact with the sputtering electrode. Film peeling prevention device for die-type sputtering equipment.