JPH0562080B2 - - Google Patents
Info
- Publication number
- JPH0562080B2 JPH0562080B2 JP61077877A JP7787786A JPH0562080B2 JP H0562080 B2 JPH0562080 B2 JP H0562080B2 JP 61077877 A JP61077877 A JP 61077877A JP 7787786 A JP7787786 A JP 7787786A JP H0562080 B2 JPH0562080 B2 JP H0562080B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- substrate
- recording medium
- wavelength
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 25
- 229920005668 polycarbonate resin Polymers 0.000 claims description 4
- 239000004431 polycarbonate resin Substances 0.000 claims description 4
- 150000000475 acetylene derivatives Chemical class 0.000 claims description 3
- 229910020366 ClO 4 Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 description 27
- 150000001875 compounds Chemical class 0.000 description 17
- 239000010410 layer Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 6
- 239000004033 plastic Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- ZWMAYLMVFSCMMS-UHFFFAOYSA-N 4-ethynyl-n,n-dimethylaniline Chemical group CN(C)C1=CC=C(C#C)C=C1 ZWMAYLMVFSCMMS-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- -1 alkynyl alcohol Chemical compound 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JNELGWHKGNBSMD-UHFFFAOYSA-N xanthone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3OC2=C1 JNELGWHKGNBSMD-UHFFFAOYSA-N 0.000 description 2
- JUGSKHLZINSXPQ-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluoropentan-1-ol Chemical compound OCC(F)(F)C(F)(F)C(F)(F)C(F)F JUGSKHLZINSXPQ-UHFFFAOYSA-N 0.000 description 1
- NBUKAOOFKZFCGD-UHFFFAOYSA-N 2,2,3,3-tetrafluoropropan-1-ol Chemical compound OCC(F)(F)C(F)F NBUKAOOFKZFCGD-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- RHQDFWAXVIIEBN-UHFFFAOYSA-N Trifluoroethanol Chemical compound OCC(F)(F)F RHQDFWAXVIIEBN-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- UHOKSCJSTAHBSO-UHFFFAOYSA-N indanthrone blue Chemical class C1=CC=C2C(=O)C3=CC=C4NC5=C6C(=O)C7=CC=CC=C7C(=O)C6=CC=C5NC4=C3C(=O)C2=C1 UHOKSCJSTAHBSO-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/245—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing a polymeric component
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は近赤外領域に吸収を示す前記式()
で表わされるアセチレン誘導体を光吸収剤として
含有する光デイスク等の光記録媒体に関するもの
である。Detailed Description of the Invention (Industrial Field of Application) The present invention is based on the above formula () which exhibits absorption in the near-infrared region.
The present invention relates to an optical recording medium such as an optical disk containing an acetylene derivative represented by the following as a light absorbing agent.
(従来技術とその問題点)
近年、レーザービームを用いる記録材料とし
て、近赤外領域に吸収を有する色素を含む種々の
材料が注目されている。(Prior Art and its Problems) In recent years, various materials containing dyes that absorb in the near-infrared region have attracted attention as recording materials that use laser beams.
特に、レーザービームにより記録層に微小なピ
ツトをあけたり、微小な変質点を形成させて情報
の記録を行なういわゆるヒートモードのDRAW
用記録媒体に用いる材料の開発が活発に行われて
いるが、この材料は(1)近赤外領域での吸収が大で
あり、(2)化学的に安定であり、また(3)薄膜の形成
が容易であることが必要である。 In particular, so-called heat mode DRAW that records information by making minute pits in the recording layer or forming minute alteration points using a laser beam.
Materials for use in recording media are being actively developed, but these materials (1) have high absorption in the near-infrared region, (2) are chemically stable, and (3) are suitable for thin films. It is necessary that it be easy to form.
この種の材料としては既に多数のものが提案さ
れており、例えば、シアニン系(ポリメチン系)、
アゾ系、アントラキノン系、インダンスレン系、
トリアリールメタン系、ナフトキノン系、フタロ
シアニン系、ポルフイリン系、ジチオラート錯体
系、クロコニツクメチン系、スクアリウム系、イ
ンドアニリン系等が主として研究されている。し
かし、DRAW用記録媒体に要求される前記の諸
条件を完全に満足するものはまだ無い。例えば、
上記の記録材料の中で、トリアリールメタン系
(あるいはトリフエニルメタン系とも)の材料は、
製造が容易でコストが安く、分子吸光係数が大き
く、種々の溶媒に溶解し、塗布によつて薄膜を形
成し得るものが入手できることから、光記録用に
利用できることが知られているが、吸収波長が
やゝ短波長寄りにあるという欠点があつた。 Many materials of this kind have already been proposed, such as cyanine-based (polymethine-based),
Azo series, anthraquinone series, indanthrene series,
Mainly studied are triarylmethane series, naphthoquinone series, phthalocyanine series, porphyrin series, dithiolate complex series, croconic metine series, squalium series, indoaniline series, etc. However, there is still no one that completely satisfies the above conditions required for a DRAW recording medium. for example,
Among the above recording materials, triarylmethane-based (or triphenylmethane-based) materials are
It is known that it can be used for optical recording because it is easy to manufacture, inexpensive, has a large molecular extinction coefficient, dissolves in various solvents, and can form a thin film by coating. The disadvantage was that the wavelength was on the shorter side.
さて、レーザー光によつて情報を記録再生する
ために使用される光源は、半導体レーザー(波長
〜800nm)、He−Neレーザー(波長633nm)Ar
イオンレーザー(波長488nm)等があるが、特
に半導体レーザーは小型軽量であることに加えて
安価に生産されるようになり、特にAlGaAs系半
導体レーザー(波長830nm)は実用上他の入手
可能なレーザー光源よりも優れており、この発振
波長に対応した記録材料が求められている。 Now, the light sources used to record and reproduce information with laser light are semiconductor laser (wavelength ~800nm), He-Ne laser (wavelength 633nm), Ar
There are ion lasers (wavelength: 488 nm), etc., but semiconductor lasers in particular are small and lightweight, and can be produced at low cost.In particular, AlGaAs semiconductor lasers (wavelength: 830 nm) are practically inferior to other available lasers. There is a need for a recording material that is superior to light sources and compatible with this oscillation wavelength.
さらに、光記録材料には耐再生劣化性が要求さ
れる。すなわち、光記録材料は記録時に記録材料
の層に穴明け等によつて情報ピツトを形成できる
だけの光吸収能を有することが要求されると同時
に、記録時よりも低出力の再生光によつて上記ピ
ツトを読取る際に未記録部分の記録層が上記再生
光によつて劣化しないことが要求される。 Furthermore, optical recording materials are required to have read deterioration resistance. In other words, the optical recording material is required to have enough light absorption ability to form information pits by drilling holes in the layer of the recording material during recording, and at the same time, it is required to have sufficient light absorption ability to form information pits by drilling holes in the layer of the recording material. When reading the pits, it is required that the unrecorded portion of the recording layer is not deteriorated by the reproducing light.
一方、光記録媒体に使用される基板材料は成型
加工の容易な合成樹脂をもつて作ることが有利で
あり、ポリメチルメタクリレート(PMMA)、ポ
リカーボネート、エポキシ、ポリ塩化ビニル、ポ
リメチルペンテン、ポルサルホン、ポリエーテル
イミド等が提案されているが、射出成型により機
械的特性および光学的特性に優れた複屈析の小さ
い円板状基板を製作しうるポリカーボネート樹脂
は、レーザービームの案内溝として同心円状ある
いはスパイラル状のいわゆるプリグルーブを同時
に成型転写できるため、光デイスク基板材料とし
て特に好ましいものである。 On the other hand, it is advantageous for the substrate material used for optical recording media to be made from synthetic resins that are easy to mold, such as polymethyl methacrylate (PMMA), polycarbonate, epoxy, polyvinyl chloride, polymethylpentene, porsulfone, etc. Polyetherimide, etc. have been proposed, but polycarbonate resin, which can be injection molded to produce a disk-shaped substrate with excellent mechanical and optical properties and low birefringence, is suitable for forming concentric or circular guide grooves for laser beams. It is particularly preferred as an optical disk substrate material because a spiral so-called pregroove can be molded and transferred at the same time.
さらに、上記基板上に記録層を形成する方法に
は大別して真空系で記録材料を蒸着させるドライ
プロセスと記録材料をスピンコーター、浸漬等の
手段で基板上に付着あるいは塗布させるウエツト
プロセスがあるが、前者は高真空下での加熱によ
り昇華ないしは蒸発をおこさせる必要があるの
で、これに供される化合物はまず熱的に安定であ
ることが要求され、熱的な分解点が存在する場合
は、それ以下の加熱温度で操作することが不可欠
である上に、コスト的にウエツトプロセスより不
利である。すなわち、後者の方が経済的には有利
である。しかし、塗布法においては、用いられる
化合物は適当な溶剤類に溶解し、目的に応じた基
板材料の表面を被覆し、溶剤の蒸散後は連続し
た、光学特性の均一な薄層を形成することが要求
される。すなわち、溶剤類に溶解度を持つだけで
はなく、その使用溶剤が基板材料に対して溶解、
膨潤あるいは浸透といつた表面状態の変化を起さ
ないことが必要となる。基板材料がガラスである
場合にはこのような使用溶剤に対する制限がない
ので、記録媒体として用いる光吸収の選択は、基
本的に近赤外領域での吸収の大きさ、および化学
的な安定性等を考慮して比較的自由に行ない得る
が、基板材料としてプラスチツクを用いる場合に
はこの点が特に重要となる。 Furthermore, methods for forming the recording layer on the substrate can be roughly divided into a dry process in which the recording material is deposited in a vacuum system and a wet process in which the recording material is attached or coated onto the substrate using a spin coater, dipping, or other means. However, since the former requires sublimation or evaporation by heating under high vacuum, the compound used for this process must first be thermally stable, and if a thermal decomposition point exists. In addition, it is essential to operate at a heating temperature lower than that, and it is more disadvantageous than the wet process in terms of cost. In other words, the latter is economically advantageous. However, in the coating method, the compound used is dissolved in a suitable solvent, coated on the surface of the substrate material according to the purpose, and after the solvent evaporates, forms a continuous thin layer with uniform optical properties. is required. In other words, it not only has solubility in solvents, but also dissolves and dissolves the substrate material in the solvent used.
It is necessary that changes in surface conditions such as swelling or penetration do not occur. When the substrate material is glass, there are no such restrictions on the solvent used, so the choice of light absorption to be used as a recording medium basically depends on the magnitude of absorption in the near-infrared region and chemical stability. This can be done relatively freely taking into account the following, but this point is particularly important when plastic is used as the substrate material.
以上のように、プラスチツク基板上に塗布法に
よつて記録層を形成して光情報記録媒体を作る場
合には、少なくとも3つの要求、すなわち、(1)波
長830nm付近に吸収極大を有すること、(2)化学
的に安定であること、すなわち再生劣化等が細い
こと、(3)溶解度が大きく且つ溶媒が基板材料に悪
影響を与えないこと、を満す必要がある。 As described above, when producing an optical information recording medium by forming a recording layer on a plastic substrate by a coating method, there are at least three requirements: (1) It must have an absorption maximum near a wavelength of 830 nm; (2) It must be chemically stable, that is, there is little deterioration due to reproduction, and (3) It must have high solubility and the solvent must not have an adverse effect on the substrate material.
(発明の目的)
従つて、本発明の目的は波長830nm付近の
AlGaAs系半導体レーザーから得られるレーザー
ビームを記録および再生に用いることができ、入
手の容易なポリカーボネート樹脂製の基板材料に
塗布法によつて直接膜形成して製造することが可
能であり、且つ再生劣化のない光記録媒体を提供
することにある。(Object of the invention) Therefore, the object of the present invention is to
A laser beam obtained from an AlGaAs semiconductor laser can be used for recording and reproduction, and it can be manufactured by directly forming a film on an easily available polycarbonate resin substrate material by a coating method. The objective is to provide an optical recording medium that does not deteriorate.
(発明の構成)
本発明は基板と、この基板上に形成された記録
層とを含む光情報記録媒体において、上記記録層
が下式()で表わされるアセチレン誘導体:
(式中、YはOおよびSを表わし、XはClO4、
BF4、PF6、Cl、FまたはBrを表わす)を含むこ
とを特徴としている。(Structure of the Invention) The present invention provides an optical information recording medium including a substrate and a recording layer formed on the substrate, wherein the recording layer is an acetylene derivative represented by the following formula (): (In the formula, Y represents O and S, X is ClO 4 ,
BF 4 , PF 6 , Cl, F or Br).
上記の光情報記録媒体はDRAWあるいは
WORM型のメモリー、例えば光デイスク、光カ
ード、光テープ、光ドラム等として用いることが
できるが、パターン記録材料等をして用いること
もできる。 The above optical information recording media are DRAW or
It can be used as a WORM type memory, such as an optical disk, an optical card, an optical tape, an optical drum, etc., but it can also be used as a pattern recording material, etc.
上記支持体はデイスク、カード、テープシート
等の任意の形状にすることができ、その素材はプ
ラスチツク、金属、ガラス、セラミツクス、その
他任意のものが使用できる。特に本発明は
DRAW型光デイスク、特にプリグループを有す
るプラスチツク基板を用いたDRAW型光デイス
クに適用するのが好ましい。 The support can be in any shape such as a disk, card, or tape sheet, and its material can be plastic, metal, glass, ceramics, or any other material. In particular, the present invention
It is preferable to apply the present invention to a DRAW type optical disk, particularly a DRAW type optical disk using a plastic substrate having a pre-group.
上記プラスチツクとしては、ポリカーボネート
樹脂、エポキシ樹脂等の任意の材料が用いられる
が、背面記録方式(いわゆるPhilips方式)に用
いる透明プラスチツク基板を用いるのが好まし
い。 As the plastic, any material such as polycarbonate resin or epoxy resin can be used, but it is preferable to use a transparent plastic substrate used in the rear surface recording method (so-called Philips method).
上記()式で表わされる化合物は溶媒に溶か
した溶液を基板すなわち支持体上に直接塗布して
もよいが、バインダーと一緒に用いてもよい。こ
のバインダーとしては任意公知の高分子材料、例
えば、アイオノマー樹脂、セルロース誘導体等が
挙げられる。この他安定剤、滑剤、帯電防止剤、
界面活性剤、可塑剤等の添加剤を必要に応じて添
加することができる。 The compound represented by the above formula () may be dissolved in a solvent and applied directly onto the substrate, ie, the support, or may be used together with a binder. Examples of the binder include any known polymeric materials, such as ionomer resins and cellulose derivatives. In addition, stabilizers, lubricants, antistatic agents,
Additives such as surfactants and plasticizers can be added as necessary.
記録層の膜厚はバインダーの使用の有無にもよ
るが一般的には100Åから5μm、好ましく200Å
から1μmであり、バインダーを使用しない場合
には200Åから5000Åの範囲が好ましい。 The thickness of the recording layer depends on whether or not a binder is used, but generally it is 100 Å to 5 μm, preferably 200 Å.
to 1 μm, and preferably in the range of 200 Å to 5000 Å when no binder is used.
なお、本発明の記録層を他の記録層および/ま
たは保護層と下地層と組合せて積層膜として用い
ることもできる。 Note that the recording layer of the present invention can also be used as a laminated film in combination with other recording layers and/or protective layers and underlayers.
上記溶媒としてはメタノール等のアルコール
類、アセトン等のケトン類、ジメチルホルムアミ
ド等のアミド類、エチレングリコールモノメチル
エーテル等のエーテル類、酢酸メチル等のエステ
ル類、クロロホルム等のハロゲン化炭化水素、ベ
ンゼン等の芳香族類を単独または組合せて用いる
ことができる。上記溶液の塗布あるいは付着はス
ピンコーテイング、デイツプコーテイング、ロー
ラーコーテイング等の任意の手段で行うことがで
きる。 The above-mentioned solvents include alcohols such as methanol, ketones such as acetone, amides such as dimethylformamide, ethers such as ethylene glycol monomethyl ether, esters such as methyl acetate, halogenated hydrocarbons such as chloroform, benzene, etc. Aromatics can be used alone or in combination. Application or attachment of the above solution can be carried out by any means such as spin coating, dip coating, roller coating, etc.
本発明の上記()の化合物は上記のようにウ
エツトタイプで用いるのが好ましいが、場合によ
つては蒸着、CVD等のドライプロセスで用いる
こともできる。 The above-mentioned compound () of the present invention is preferably used in a wet type as described above, but in some cases it can also be used in a dry process such as vapor deposition or CVD.
以下、化合物()の合成法および実施例を用
いて本発明を説明する。 The present invention will be explained below using a method for synthesizing compound () and examples.
(化合物()の合成)
上記式()の化合物は、Shuzo AKIYAMA
等(CHEMISTRY LETTERS、pp.311−314、
1981参照)の方法と同様にして合成した。(Synthesis of compound ()) The compound of the above formula () is Shuzo AKIYAMA
etc. (CHEMISTRY LETTERS, pp.311-314,
It was synthesized in a similar manner to the method of (see 1981).
すなわち、4−ジメチルアミノフエニルアセチ
レンとキサントンとの反応から得られるアルキニ
ルアルコール前駆体(融点〜175℃分解)のベン
ゼン溶液に、当量の60%過塩素酸水溶液を加え、
室温で撹拌することにより、()の化合物の粗
結晶が得られる。これを常法に従つて別・洗浄
し、乾燥した標品をさらにジクロロメタンから再
結晶を行ない、式()の化合物を融点164℃
(分解)の針状晶として得た。吸収スペクトル
λmax737nm(シクロロメタン中)、ε76000。 That is, an equivalent amount of 60% perchloric acid aqueous solution is added to a benzene solution of an alkynyl alcohol precursor (melting point ~ 175 ° C decomposition) obtained from the reaction of 4-dimethylaminophenyl acetylene and xanthone,
By stirring at room temperature, crude crystals of the compound () are obtained. This was separated and washed according to a conventional method, and the dried specimen was further recrystallized from dichloromethane to obtain a compound of formula () with a melting point of 164°C.
Obtained as needle-like crystals (decomposition). Absorption spectrum λmax 737nm (in cyclomethane), ε76000.
(化合物()の合成)
上記式()の化合物は、Shuzo AKIYAMA
等(CHEMISTRY LETTERS、pp.311−314、
1981参照)の方法と同様にして合成した。すなわ
ち、4−ジメチルアミノフエニルアセチレンとチ
オキサントンとの反応から得られるアルキニルア
ルコール前駆体(融点〜135℃分解)のベンゼン
溶液に、当量の60%過塩素酸水溶液を加え、室温
で撹拌することにより、()の化合物の粗結晶
が生成する。(Synthesis of compound ()) The compound of the above formula () is Shuzo AKIYAMA
etc. (CHEMISTRY LETTERS, pp.311-314,
It was synthesized in a similar manner to the method of (see 1981). That is, by adding an equivalent amount of 60% perchloric acid aqueous solution to a benzene solution of an alkynyl alcohol precursor (melting point ~ 135 ° C decomposition) obtained from the reaction of 4-dimethylaminophenyl acetylene and thioxanthone, and stirring at room temperature. , crude crystals of the compound () are formed.
これを常法に従つて別・洗浄し、乾燥後さら
にジクロロメタンから再結晶を行ない、式()
の化合物を融点195℃(分解)の針状晶として得
た。吸収スペクトルλmax775nm(ジクロロメタ
ン中)、ε83500。 This was separated and washed according to a conventional method, dried, and further recrystallized from dichloromethane.
The compound was obtained as needle crystals with a melting point of 195°C (decomposed). Absorption spectrum λmax 775nm (in dichloromethane), ε83500.
実施例 1
前記式()で表わされる化合物100ミリグラ
ムを、2,2,2−トリフルオロエタノール5グ
ラムと2,2,3,3−テトラフルオロ−1−プ
ロパノール5グラムとの混合物に溶解し、テフロ
ン製のフイルター(ポアサイズ0.2ミクロン)で
過し塗布液とした。射出成形により1.6ミクロ
ンピツチのグルーブを転写したポリカーボネート
基板上に、この塗布液をスピンコート法(回転数
600回転/分)によつて塗布し、風乾して光記録
媒体を得た。この記録媒体の波長830nmにおけ
る吸光度は0.197であり、また同波長における基
板側から測定した反射率は16%であつた。Example 1 100 milligrams of the compound represented by the above formula () was dissolved in a mixture of 5 grams of 2,2,2-trifluoroethanol and 5 grams of 2,2,3,3-tetrafluoro-1-propanol, The coating solution was filtered through a Teflon filter (pore size 0.2 microns). This coating solution is applied using a spin coating method (rotation speed
600 rpm) and air-dried to obtain an optical recording medium. The absorbance of this recording medium at a wavelength of 830 nm was 0.197, and the reflectance measured from the substrate side at the same wavelength was 16%.
この記録媒体に波長830nmの半導体レーザー
光を集光して基板の側から照射した。信号の記録
は照射面パワー10.0mW、線速4.24m/secにてパ
ルス幅1μsecのパルス光を照射することによつて
行なつた。 A semiconductor laser beam with a wavelength of 830 nm was focused on this recording medium and irradiated from the substrate side. Signal recording was performed by irradiating pulsed light with a pulse width of 1 μsec at an irradiation surface power of 10.0 mW and a linear velocity of 4.24 m/sec.
この記録部に照射面パワー0.8mWの連続光を
あて、信号を再生したところ43dBのC/N比が
得られた。さらに、この再生操作を1時間連続し
て続行したが、C/N比の変化は全くなかつた。 When this recording section was irradiated with continuous light with an irradiation surface power of 0.8 mW and the signal was reproduced, a C/N ratio of 43 dB was obtained. Further, this regeneration operation was continued for one hour, but there was no change in the C/N ratio at all.
また、この記録媒体に信号を記録する際、レー
ザービームの照射面パワーが2.0mW以下では、
再生信号が1dB以下のC/N比を示し、何ら記録
が起つていなかつた。 Also, when recording signals on this recording medium, if the irradiation surface power of the laser beam is 2.0 mW or less,
The reproduced signal showed a C/N ratio of 1 dB or less, and no recording occurred.
実施例 2
前記式()で表わされる化合物177ミリグラ
ムを、2,2,3,3,4,4,5,5−オクタ
フルオロ−1−ペンタノール10グラムに溶解し、
テフロン製のフイルター(ポアサイズ0.2ミクロ
ン)で過し塗布液とした。Example 2 177 milligrams of the compound represented by the above formula () was dissolved in 10 grams of 2,2,3,3,4,4,5,5-octafluoro-1-pentanol,
The coating solution was filtered through a Teflon filter (pore size 0.2 microns).
射出成形により1.6ミクロンピツチのグルーブ
を転写したポリカーボネート基板上に、この塗布
液をスピンコート法(回転数900回転/分)によ
つて塗布し、風乾して光記録媒体を得た。この記
録媒体の波長830nmにおける吸光度は0.318であ
り、また同波長における基板側から測定した反射
率は17%であつた。 This coating solution was applied by spin coating (rotation speed: 900 rpm) onto a polycarbonate substrate onto which grooves with a pitch of 1.6 microns were transferred by injection molding, and air-dried to obtain an optical recording medium. The absorbance of this recording medium at a wavelength of 830 nm was 0.318, and the reflectance measured from the substrate side at the same wavelength was 17%.
この記録媒体に波長380nmの半導体レーザー
光を集光して基板の側から照射した。信号の記録
は照射面パワー9.0mW、線速4.24m/secにてパ
ルス幅1μsecのパルス光を照射することによつて
行なつた。 A semiconductor laser beam having a wavelength of 380 nm was focused on this recording medium and irradiated from the substrate side. Signal recording was performed by irradiating pulsed light with a pulse width of 1 μsec at an irradiation surface power of 9.0 mW and a linear velocity of 4.24 m/sec.
この記録部に照射面パワー0.8mWの連続光を
あて、信号を再生したところ49dBのC/N比が
得られた。さらに、この再生操作を1時間連続し
て続行したが、C/N比の変化は全く無かつた。 When this recording section was irradiated with continuous light with an irradiation surface power of 0.8 mW and the signal was reproduced, a C/N ratio of 49 dB was obtained. Furthermore, this regeneration operation was continued for one hour, but there was no change in the C/N ratio at all.
また、この記録媒体に信号を記録する際、レー
サービームの照射面パワーが1.7mW以下では、
再生信号が1dB以下のC/N比を示し、何ら記録
が起つていなかつた。 Also, when recording signals on this recording medium, if the laser beam irradiation surface power is 1.7mW or less,
The reproduced signal showed a C/N ratio of 1 dB or less, and no recording occurred.
実施例 3
前記式()で表わされる化合物79ミリグラム
と、前記式()で表わされる化合物79ミリグラ
ムをとを2,2,3,3,4,4,5,5−オク
タフルオロ−1−ペンタノール10グラムに溶解
し、テフロン製のフイルター(ポアサイズ0.2ミ
クロン)で過し塗布液とした。射出成形により
1.6ミクロンピツチのグルーブを転写したポリカ
ーボネート基板上に、この塗布液をスピンコート
法(回転数800回転/分)によつて塗布し、風乾
して光記録媒体を得た。この記録媒体の波長
830nmにおける吸光度は0.248であり、また同波
長における基板側から測定した反射率は18%であ
つた。Example 3 79 milligrams of the compound represented by the above formula () and 79 milligrams of the compound represented by the above formula () were combined into 2,2,3,3,4,4,5,5-octafluoro-1-pene. It was dissolved in 10 grams of ethanol and filtered through a Teflon filter (pore size 0.2 microns) to prepare a coating solution. by injection molding
This coating solution was applied by spin coating (rotation speed: 800 revolutions/min) onto a polycarbonate substrate onto which grooves with a pitch of 1.6 microns had been transferred, and air-dried to obtain an optical recording medium. Wavelength of this recording medium
The absorbance at 830 nm was 0.248, and the reflectance measured from the substrate side at the same wavelength was 18%.
この記録媒体に波長830nmの半導体レーザー
光を集光して基板の側から照射した。信号の記録
は照射面パワー6.0mW、線速4.24m/secにてパ
ルス幅1μsecのパルス光を照射することによつて
行なつた。 A semiconductor laser beam with a wavelength of 830 nm was focused on this recording medium and irradiated from the substrate side. Signal recording was performed by irradiating pulsed light with a pulse width of 1 μsec at an irradiation surface power of 6.0 mW and a linear velocity of 4.24 m/sec.
この記録部に照射面パワー0.8mWの連続光を
あて、信号を再生したところ49dBのC/N比が
得られた。さらに、この再生操作を1時間連続し
て続行したが、C/N比の変化は全く無かつた。 When this recording section was irradiated with continuous light with an irradiation surface power of 0.8 mW and the signal was reproduced, a C/N ratio of 49 dB was obtained. Furthermore, this regeneration operation was continued for one hour, but there was no change in the C/N ratio at all.
また、この記録媒体に信号を記録する際、レー
ザービームの照射面パワーが1.6mW以下では、
再生信号が1dB以下のC/N比を示し、何ら記録
が起つていなかつた。 Also, when recording signals on this recording medium, if the laser beam irradiation surface power is 1.6 mW or less,
The reproduced signal showed a C/N ratio of 1 dB or less, and no recording occurred.
Claims (1)
成される光情報記録媒体において、上記記録層が
下記の一般式(): (ここで、YはOまたはSであり、XはClO4、
BF4、PF6、Cl、FまたはBr)で表わされるアセ
チレン誘導体を含むことを特徴とする光情報記録
媒体。 2 上記基板がポリカーボネート樹脂で作られて
いることを特徴とする特許請求の範囲第1項記載
の光情報記録媒体。[Claims] 1. An optical information recording medium composed of a substrate and a recording layer formed on the substrate, wherein the recording layer has the following general formula (): (Here, Y is O or S, X is ClO 4 ,
1. An optical information recording medium comprising an acetylene derivative represented by BF 4 , PF 6 , Cl, F or Br). 2. The optical information recording medium according to claim 1, wherein the substrate is made of polycarbonate resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61077877A JPS62246790A (en) | 1986-04-04 | 1986-04-04 | Optical information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61077877A JPS62246790A (en) | 1986-04-04 | 1986-04-04 | Optical information recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62246790A JPS62246790A (en) | 1987-10-27 |
JPH0562080B2 true JPH0562080B2 (en) | 1993-09-07 |
Family
ID=13646292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61077877A Granted JPS62246790A (en) | 1986-04-04 | 1986-04-04 | Optical information recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62246790A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU3215900A (en) * | 1999-02-12 | 2000-08-29 | Trid Store Ip, L.L.C. | Method of increasing fluorescent signal of optical discs with fluorescent reading |
-
1986
- 1986-04-04 JP JP61077877A patent/JPS62246790A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62246790A (en) | 1987-10-27 |
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