JPH0556559A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0556559A
JPH0556559A JP3216904A JP21690491A JPH0556559A JP H0556559 A JPH0556559 A JP H0556559A JP 3216904 A JP3216904 A JP 3216904A JP 21690491 A JP21690491 A JP 21690491A JP H0556559 A JPH0556559 A JP H0556559A
Authority
JP
Japan
Prior art keywords
power supply
supply voltage
circuit
internal
power source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3216904A
Other languages
Japanese (ja)
Inventor
Atsuko Kenmoku
篤子 見目
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3216904A priority Critical patent/JPH0556559A/en
Publication of JPH0556559A publication Critical patent/JPH0556559A/en
Pending legal-status Critical Current

Links

Landscapes

  • Direct Current Feeding And Distribution (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To promote a low power consumption by stabilizing the operational characteristics, or the quality, of a digital signal processor DSP or the like in which a power source circuit POW is incorporated. CONSTITUTION:A power source circuit POW incorporated in a digital signal processor DSP or the like comprises a plurality of voltage generating circuits which form the inner power source voltages VCCI having different potentials on the basis of external power source voltages VCC, respectively, a power source controlling circuit which selectively forms a power source voltage selecting signal by monitoring the operational characteristics of a given logic gate, and a plurality of switching means to be selectively in on-state in accordance with the power source voltage selecting signal. Hence, the potential of the inner power source voltage is selectively switched in accordance with the operational characteristics, or the external conditions, of the logic gate and others constituting the inner circuit IC for the digital signal processor or the like.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は半導体装置に関し、例
えば、電源回路を内蔵するディジタル信号処理装置等に
利用して特に有効な技術に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a technique which is particularly effective when used in a digital signal processing device having a power supply circuit incorporated therein.

【0002】[0002]

【従来の技術】外部から供給される外部電源電圧をもと
に所定の内部電源電圧を形成して内部回路に供給する電
源回路がある。また、このような電源回路を内蔵するデ
ィジタル信号処理装置等の半導体装置がある。
2. Description of the Related Art There is a power supply circuit which forms a predetermined internal power supply voltage based on an external power supply voltage supplied from the outside and supplies the voltage to an internal circuit. There is also a semiconductor device such as a digital signal processing device that incorporates such a power supply circuit.

【0003】電源回路については、例えば、特開昭57
−061981号公報等に記載されている。
Regarding the power supply circuit, for example, Japanese Patent Laid-Open No. 57-57
-061981 and the like.

【0004】[0004]

【発明が解決しようとする課題】従来のディジタル信号
処理装置等において、内蔵される電源回路の数は実質的
に1個とされ、外部電源電圧の電位変動や基板を含む装
置周辺の温度変動等の外部条件に影響されない安定した
内部電源電圧を形成して内部回路に供給することをその
主たる機能とする。
In the conventional digital signal processing device and the like, the number of built-in power supply circuits is substantially one, and the potential fluctuation of the external power supply voltage and the temperature fluctuation around the device including the substrate are caused. Its main function is to form a stable internal power supply voltage that is not affected by the external conditions of and to supply it to the internal circuit.

【0005】ところが、内部回路を構成する論理ゲート
等の動作特性は、電源電圧の電位変動のみならず例えば
装置周辺の温度変動にともなって変化する。このため、
上記のような電源回路を内蔵するディジタル信号処理装
置等では、電源電圧の電位変動にともなう論理ゲート等
の動作特性の変化は解消できるものの、装置周辺の温度
変動にともなう動作特性の変化を解消することはできな
い。その結果、ディジタル信号処理装置等の動作特性が
変化し、安定した品質のディジタル信号処理装置等を提
供することができない。
However, the operating characteristics of the logic gates and the like which form the internal circuit change not only with the potential fluctuations of the power supply voltage but also with, for example, temperature fluctuations around the device. For this reason,
In a digital signal processing device or the like having a built-in power supply circuit as described above, changes in operating characteristics such as logic gates due to potential fluctuations in power supply voltage can be eliminated, but changes in operating characteristics due to temperature variations around the device can be eliminated. It is not possible. As a result, the operating characteristics of the digital signal processing device and the like change, and it is not possible to provide a stable quality digital signal processing device and the like.

【0006】一方、ディジタル信号処理装置等の内部回
路を構成する論理ゲート等の動作特性は、製造プロセス
によるいわゆるプロセスバラツキを呈するが、電源回路
によって形成される内部電源電圧の電位は、このような
プロセスバラツキを見越した上で余裕をもって高めに設
定される。言い換えるならば、良好な動作特性を持つ論
理ゲート等からみた場合、もっと低い電位で動作できる
にもかかわらず高い電位の内部電源電圧を受ける結果と
なり、これによってディジタル信号処理装置等の折角の
低消費電力化の機会が損なわれる。
On the other hand, the operating characteristics of logic gates and the like which compose internal circuits of digital signal processing devices and the like exhibit so-called process variation due to the manufacturing process, but the potential of the internal power supply voltage formed by the power supply circuit is as described above. It is set to a higher value with a margin after allowing for process variations. In other words, when viewed from a logic gate having good operating characteristics, the internal power supply voltage of high potential is received even though it can operate at a lower potential, which results in low consumption of digital signal processing devices. Electrification opportunities are compromised.

【0007】この発明の目的は、外部条件や内部回路を
構成する論理ゲート等の動作特性に応じて内部電源電圧
の電位を切り換えうる電源回路を提供することにある。
この発明の他の目的は、電源回路を内蔵するディジタル
信号処理装置等の動作特性つまりは品質の安定化を図
り、その低消費電力化を推進することにある。
An object of the present invention is to provide a power supply circuit capable of switching the potential of the internal power supply voltage according to external conditions and operating characteristics of logic gates and the like which form an internal circuit.
Another object of the present invention is to stabilize the operating characteristics, that is, the quality of a digital signal processing device having a built-in power supply circuit, and to promote the reduction of power consumption thereof.

【0008】[0008]

【課題を解決するための手段】本願において開示される
発明のうち代表的なものの概要を簡単に説明すれば次の
通りである。すなわち、ディジタル信号処理装置等に内
蔵される電源回路を、外部電源電圧をもとに電位の異な
る内部電源電圧をそれぞれ形成する複数の電圧発生回路
と、所定の論理ゲートの動作特性をモニタして選択的に
電源電圧選択信号を形成する電源制御回路と、上記電源
電圧選択信号に従って選択的にオン状態とされ対応する
上記電圧発生回路から出力される内部電源電圧を選択的
に内部回路に伝達する複数のスイッチ手段とにより構成
する。
The outline of the typical inventions among the inventions disclosed in the present application will be briefly described as follows. That is, a power supply circuit built in a digital signal processing device or the like is monitored by monitoring a plurality of voltage generation circuits that respectively form internal power supply voltages having different potentials based on an external power supply voltage and operating characteristics of predetermined logic gates. A power supply control circuit that selectively forms a power supply voltage selection signal and an internal power supply voltage that is selectively turned on according to the power supply voltage selection signal and that is output from the corresponding voltage generation circuit is selectively transmitted to the internal circuit. It is composed of a plurality of switch means.

【0009】[0009]

【作用】上記手段によれば、ディジタル信号処理装置等
の内部回路を構成する論理ゲート等の動作特性つまりは
外部条件に応じて内部電源電圧の電位を選択的に切り換
えることができるため、ディジタル信号処理装置等の動
作特性つまりその品質を安定化できるとともに、内部電
源電圧の電位をその性能に応じて低めに設定し、ディジ
タル信号処理装置等の低消費電力化を推進することがで
きる。
According to the above means, the potential of the internal power supply voltage can be selectively switched according to the operating characteristics of the logic gate or the like forming the internal circuit of the digital signal processing device or the like, that is, the external condition. It is possible to stabilize the operating characteristics of the processing device or the like, that is, the quality thereof, and set the potential of the internal power supply voltage to a low value in accordance with the performance thereof to promote the low power consumption of the digital signal processing device or the like.

【0010】[0010]

【実施例】図1には、この発明が適用されたディジタル
信号処理装置DSPの一実施例のブロック図が示されて
いる。また、図2には、図1のディジタル信号処理装置
DSPの電源回路POWに含まれる電源制御回路VCT
Lの一実施例のブロック図が示されている。これらの図
をもとに、この実施例のディジタル信号処理装置及び電
源回路の構成と動作の概要ならびにその特徴について説
明する。なお、図1及び図2の各ブロックを構成する回
路素子は、公知の集積回路製造技術により、単結晶シリ
コンのような1個の半導体基板上に形成される。
1 is a block diagram of an embodiment of a digital signal processor DSP to which the present invention is applied. 2 shows a power supply control circuit VCT included in the power supply circuit POW of the digital signal processing device DSP shown in FIG.
A block diagram of one embodiment of L is shown. Based on these drawings, the outline of the configuration and operation of the digital signal processing device and the power supply circuit of this embodiment and the features thereof will be described. The circuit elements forming each block of FIGS. 1 and 2 are formed on a single semiconductor substrate such as single crystal silicon by a known integrated circuit manufacturing technique.

【0011】図1において、この実施例のディジタル信
号処理装置DSPは、多数の論理ゲート等が組み合わさ
れてなる内部回路ICと、外部から供給される外部電源
電圧VCCをもとに所定の内部電源電圧VCCIを形成
して上記内部回路ICに供給する電源回路POWとを備
える。ここで、外部電源電圧VCCは、特に制限されな
いが、+5Vのような正の電源電圧とされる。また、外
部電源電圧VCCとともに外部から供給される接地電位
VSSは、そのまま回路の基準電位となる。なお、以下
の説明は、電源回路POWを中心に行い、発明に直接関
係のない内部回路ICについてはその説明を割愛する。
In FIG. 1, a digital signal processing device DSP of this embodiment has a predetermined internal power supply based on an internal circuit IC formed by combining a large number of logic gates and the like and an external power supply voltage VCC supplied from the outside. And a power supply circuit POW that forms a voltage VCCI and supplies it to the internal circuit IC. Here, the external power supply voltage VCC is a positive power supply voltage such as + 5V, although not particularly limited. Further, the ground potential VSS supplied from the outside together with the external power supply voltage VCC becomes the reference potential of the circuit as it is. The following description will be focused on the power supply circuit POW, and the description of the internal circuit IC not directly related to the invention will be omitted.

【0012】電源回路POWは、特に制限されないが、
外部電源電圧供給点VCCと内部電源電圧供給点VCC
Iとの間に並列形態に設けられる3組の電圧発生回路及
びスイッチ手段を備える。すなわち、外部電源電圧供給
点VCCは、直列形態とされる2個のダイオードD1及
びD2からなる第1の電圧発生回路とスイッチ手段S1
とを介して内部電源電圧供給点VCC1に結合されると
ともに、1個のダイオードD3からなる第2の電圧発生
回路とスイッチ手段S2とを介して内部電源電圧供給点
VCCIに結合され、さらに0個のダイオードつまりは
構成素子を持たない第3の電圧発生回路とスイッチ手段
S3とを介して内部電源電圧供給点VCCIに結合され
る。ここで、ダイオードD1〜D3のそれぞれは、例え
ば比較的大きなサイズをもって形成されるバイポーラト
ランジスタからなり、そのベース・エミッタ電圧VBE
に相当する順方向電圧を持つ。また、スイッチ手段S1
〜S3は、比較的大きなサイズをもって形成されるMO
SFET(絶縁ゲート型電界効果トランジスタ)からな
り、電源制御回路VCTLから供給される電源電圧選択
信号VS1〜VS3に従って択一的にオン状態とされ
る。
The power supply circuit POW is not particularly limited,
External power supply voltage supply point VCC and internal power supply voltage supply point VCC
It is provided with three sets of voltage generating circuits and switch means provided in parallel with I. That is, the external power supply voltage supply point VCC has a first voltage generating circuit composed of two diodes D1 and D2 arranged in series and a switching means S1.
Is connected to the internal power supply voltage supply point VCC1 via the second voltage generating circuit composed of one diode D3 and the switch means S2, and is further connected to the internal power supply voltage supply point VCCI. Is connected to the internal power supply voltage supply point VCCI via the third voltage generating circuit having no diode, that is, the constituent element, and the switch means S3. Here, each of the diodes D1 to D3 is composed of, for example, a bipolar transistor formed with a relatively large size, and its base-emitter voltage VBE.
Has a forward voltage equivalent to. Also, the switch means S1
~ S3 is an MO formed with a relatively large size
It is composed of an SFET (insulated gate type field effect transistor) and is selectively turned on in accordance with power supply voltage selection signals VS1 to VS3 supplied from the power supply control circuit VCTL.

【0013】電源電圧制御信号VS1がハイレベルとさ
れるとき、電源回路POWでは、スイッチ手段S1がオ
ン状態となり、第1の電圧発生回路が有効となる。した
がって、外部電源電圧VCCは、2個のダイオードD1
及びD2の順方向電圧すなわち2VBE分だけ低くされ
た後、内部電源電圧VCCIとして内部回路ICに供給
される。一方、電源電圧制御信号VS2がハイレベルと
されるとき、電源回路POWでは、スイッチ手段S2が
オン状態となり、第2の電圧発生回路が有効となる。し
たがって、外部電源電圧VCCは、1個のダイオードD
3の順方向電圧すなわちVBE分だけ低くされた後、内
部電源電圧VCCIとして内部回路ICに供給される。
同様に、電源電圧制御信号VS3がハイレベルとされる
とき、電源回路POWでは、スイッチ手段S3がオン状
態となり、第3の電圧発生回路が有効となる。したがっ
て、外部電源電圧VCCは、低くされることなくそのま
ま内部電源電圧VCCIとなり、内部回路ICに供給さ
れる。内部電源電圧VCCIは、電源制御回路VCTL
にも供給される。
When the power supply voltage control signal VS1 is at a high level, in the power supply circuit POW, the switch means S1 is turned on, and the first voltage generating circuit becomes effective. Therefore, the external power supply voltage VCC is equal to that of the two diodes D1.
, And the forward voltage of D2, that is, 2VBE, are supplied to the internal circuit IC as the internal power supply voltage VCCI. On the other hand, when the power supply voltage control signal VS2 is at the high level, in the power supply circuit POW, the switch means S2 is turned on, and the second voltage generation circuit becomes effective. Therefore, the external power supply voltage VCC is equal to one diode D
After being reduced by the forward voltage of 3, that is, VBE, it is supplied to the internal circuit IC as the internal power supply voltage VCCI.
Similarly, when the power supply voltage control signal VS3 is at the high level, in the power supply circuit POW, the switch means S3 is turned on, and the third voltage generation circuit becomes effective. Therefore, the external power supply voltage VCC becomes the internal power supply voltage VCCI without being lowered and is supplied to the internal circuit IC. The internal power supply voltage VCCI is the power supply control circuit VCTL.
Will also be supplied.

【0014】電源制御回路VCTLは、図2に示される
ように、上記内部電源電圧VCCIを動作電源とするリ
ングオシレータROSCを含む。この実施例において、
リングオシレータROSCは、内部回路ICを構成する
論理ゲートと同一の動作特性を持つ複数の論理ゲートか
らなり、所定の中心周波数を有するクロック信号CPを
形成する。周知のように、論理ゲートの伝達遅延時間を
含む動作特性は、その動作電源つまりは内部電源電圧V
CCIの電位や半導体基板面等における装置周辺温度等
の外部条件の変動によって変化し、これにともなってリ
ングオシレータROSCから出力されるクロック信号C
Pの周波数も変化する。
As shown in FIG. 2, power supply control circuit VCTL includes a ring oscillator ROSC which uses the internal power supply voltage VCCI as an operating power supply. In this example,
The ring oscillator ROSC is composed of a plurality of logic gates having the same operation characteristics as the logic gates forming the internal circuit IC, and forms the clock signal CP having a predetermined center frequency. As is well known, the operating characteristic including the propagation delay time of a logic gate is the operating power supply, that is, the internal power supply voltage V.
The clock signal C output from the ring oscillator ROSC changes with changes in external conditions such as the potential of the CCI and the temperature around the device on the semiconductor substrate surface.
The frequency of P also changes.

【0015】クロック信号CPは、周波数カウンタFC
TRに供給される。周波数カウンタFCTRには、さら
にリセット制御回路RSTCからリセット信号RSTが
供給され、その出力信号すなわち内部制御信号VU及び
VDは、電源選択回路VSELに供給される。
The clock signal CP is a frequency counter FC
Supplied to TR. The frequency counter FCTR is further supplied with the reset signal RST from the reset control circuit RSTC, and its output signal, that is, the internal control signals VU and VD are supplied to the power supply selection circuit VSEL.

【0016】リセット制御回路RSTCは、特に制限さ
れないが、発振精度の高い水晶発振子を含み、安定した
周期のリセット信号RSTを形成して、周波数カウンタ
FCTRに供給する。周波数カウンタFCTRは、上記
リセット信号RSTによって周期的にリセットされ、そ
の間におけるクロック信号CPのパルス数つまりはその
周波数を定常的に計数する。そして、クロック信号CP
の周波数が所定の値に達しないとき、言い換えるならば
リングオシレータROSCつまりは内部回路ICを構成
する論理ゲートの伝達遅延時間が比較的長くその動作速
度が比較的遅いときには、一方の内部制御信号VUをハ
イレベルとし、逆にクロック信号CPの周波数が所定の
値を超えるとき、言い換えるならば論理ゲートの伝達遅
延時間が比較的短くその動作速度が比較的速いときに
は、他方の内部制御信号VDをハイレベルとする。クロ
ック信号CPの周波数が所定範囲内にあるとき、内部制
御信号VD及びVUはともにロウレベルとされる。
Although not particularly limited, the reset control circuit RSTC includes a crystal oscillator with high oscillation accuracy, forms a reset signal RST having a stable cycle, and supplies the reset signal RST to the frequency counter FCTR. The frequency counter FCTR is periodically reset by the reset signal RST, and constantly counts the number of pulses of the clock signal CP, that is, its frequency during that period. And the clock signal CP
If the frequency does not reach a predetermined value, in other words, if the ring oscillator ROSC, that is, the logic gate forming the internal circuit IC has a relatively long transmission delay time and a relatively slow operation speed, one of the internal control signals VU When the frequency of the clock signal CP exceeds a predetermined value, in other words, when the transmission delay time of the logic gate is relatively short and its operating speed is relatively fast, the other internal control signal VD is set to high. Level. When the frequency of the clock signal CP is within a predetermined range, both the internal control signals VD and VU are at low level.

【0017】次に、電源選択回路VSELは、周波数カ
ウンタFCTRから供給される内部制御信号VU及びV
Dに従って、前記電源電圧選択信号VS1〜VS3を択
一的にハイレベルとする。すなわち、電源選択回路VS
ELは、内部制御信号VUがハイレベルとされるとき、
ハイレベルとすべき電源電圧選択信号をVS1からVS
2あるいはVS2からVS3へと順次シフトさせ、逆に
内部制御信号VDがハイレベルとされるとき、ハイレベ
ルとすべき電源電圧選択信号をVS3からVS2あるい
はVS2からVS1へと順次シフトさせる。そして、内
部制御信号VU及びVDがともにロウレベルとされると
き、その時点でハイレベルとされる電源電圧選択信号V
S1〜VS3をそのまま継続してハイレベルとする。
Next, the power source selection circuit VSEL has an internal control signal VU and VU supplied from the frequency counter FCTR.
According to D, the power supply voltage selection signals VS1 to VS3 are alternatively set to the high level. That is, the power supply selection circuit VS
EL is, when the internal control signal VU is at a high level,
The power supply voltage selection signal that should be high level is changed from VS1 to VS
2 or VS2 to VS3 sequentially, and conversely, when the internal control signal VD is set to the high level, the power supply voltage selection signal to be set to the high level is sequentially shifted from VS3 to VS2 or VS2 to VS1. When the internal control signals VU and VD are both set to low level, the power supply voltage selection signal V which is set to high level at that time
S1 to VS3 are continuously set to the high level.

【0018】前述のように、内部電源電圧VCCIの電
位は、電源電圧選択信号VS1がハイレベルとされると
き、外部電源電圧VCCより2VBEだけ低くされ、電
源電圧選択信号VS2がハイレベルとされるとき、外部
電源電圧VCCよりVBEだけ低くされる。また、電源
電圧選択信号VS3がハイレベルとされるとき、内部電
源電圧VCCIの電位は外部電源電圧VCCと同じ電位
とされる。これらの結果、内部電源電圧VCCIの電位
は、電源電圧選択信号VS1〜VS3つまりはクロック
信号CPの周波数、言い換えるならば電源制御回路VC
TLのリングオシレータROSCつまりは内部回路IC
を構成する論理ゲートの動作特性に応じて選択的に切り
換えられるものとなる。しかるに、内部電源電圧VCC
Iの電位は、外部電源電圧VCCの電位や半導体基板に
おける装置周辺温度等の外部条件ならびに内部回路IC
を構成する論理ゲートのプロセスバラツキに応じて選択
的に切り換えられ、最適化されるとともに、論理ゲート
の性能にあわせて低めに設定される。その結果、ディジ
タル信号処理装置DSPの動作特性つまりは品質が安定
化されるとともに、その低消費電力化が推進される。
As described above, the potential of the internal power supply voltage VCCI is lower than the external power supply voltage VCC by 2VBE when the power supply voltage selection signal VS1 is at the high level, and the power supply voltage selection signal VS2 is at the high level. At this time, the external power supply voltage VCC is lowered by VBE. When the power supply voltage selection signal VS3 is at the high level, the potential of the internal power supply voltage VCCI is set to the same potential as the external power supply voltage VCC. As a result, the potential of the internal power supply voltage VCCI is the frequency of the power supply voltage selection signals VS1 to VS3, that is, the clock signal CP, in other words, the power supply control circuit VC.
TL ring oscillator ROSC, that is, internal circuit IC
Are selectively switched according to the operating characteristics of the logic gates constituting the. However, the internal power supply voltage VCC
The potential of I depends on external conditions such as the potential of the external power supply voltage VCC and the ambient temperature of the device on the semiconductor substrate, as well as the internal circuit IC.
Is selectively switched and optimized in accordance with the process variation of the logic gates that make up the logic gates, and is set to a lower value according to the performance of the logic gates. As a result, the operating characteristics, that is, the quality, of the digital signal processing device DSP is stabilized, and the reduction of power consumption thereof is promoted.

【0019】以上の本実施例に示されるように、この発
明を電源回路を内蔵するディジタル信号処理装置DSP
等の半導体装置に適用することで、次のような作用効果
を得ることができる。すなわち、 (1)ディジタル信号処理装置等に内蔵される電源回路
を、外部電源電圧をもとに電位の異なる内部電源電圧を
それぞれ形成する複数の電圧発生回路と、所定の論理ゲ
ートの動作特性をモニタして選択的に電源電圧選択信号
を形成する電源制御回路と、上記電源電圧選択信号に従
って選択的にオン状態とされ対応する上記電圧発生回路
から出力される内部電源電圧を選択的に内部回路に伝達
する複数のスイッチ手段とにより構成することで、ディ
ジタル信号処理装置等の内部回路を構成する論理ゲート
等の動作特性つまりは外部条件に応じて内部電源電圧の
電位を選択的に切り換えることができるという効果が得
られる。 (2)上記(1)項により、ディジタル信号処理装置等
に含まれる内部回路の動作特性を安定化し、ディジタル
信号処理装置等の動作特性を安定化して、その品質を安
定化することができるという効果が得られる。 (3)上記(1)項により、内部電源電圧の電位を内部
回路の動作特性に応じて低めに設定し、ディジタル信号
処理装置等の低消費電力化を推進することができるとい
う効果が得られる。
As shown in the above embodiment, the present invention is applied to a digital signal processor DSP having a built-in power supply circuit.
The following operational effects can be obtained by applying the invention to a semiconductor device such as. That is, (1) a power supply circuit incorporated in a digital signal processing device or the like is provided with a plurality of voltage generating circuits each forming an internal power supply voltage having a different potential based on an external power supply voltage, and operating characteristics of a predetermined logic gate. A power supply control circuit that monitors and selectively forms a power supply voltage selection signal, and an internal power supply voltage that is selectively turned on according to the power supply voltage selection signal and that is output from the corresponding voltage generation circuit. And a plurality of switch means for transmitting the signal to the internal power supply voltage. The effect that can be obtained is obtained. (2) According to the above item (1), it is possible to stabilize the operating characteristics of the internal circuit included in the digital signal processing apparatus and the like, to stabilize the operating characteristics of the digital signal processing apparatus and the like, and to stabilize the quality thereof. The effect is obtained. (3) According to the above item (1), the potential of the internal power supply voltage can be set to a low value in accordance with the operating characteristics of the internal circuit, so that the power consumption of the digital signal processing device or the like can be promoted. ..

【0020】以上、本発明者によってなされた発明を実
施例に基づき具体的に説明したが、この発明は、上記実
施例に限定されるものではなく、その要旨を逸脱しない
範囲で種々変更可能であることは言うまでもない。例え
ば、図1において、電源回路POWに設けられる電圧発
生回路の数は任意であるし、各電圧発生回路を構成する
ダイオードの数も任意である。また、電源回路POW
は、ダイオード以外の手段によって内部電源電圧VCC
Iの電位を変えるものであってもよいし、リニアに変化
させるものであってもよい。スイッチ手段S1〜S3
は、MOSFET以外のスイッチ手段を用いてもよい
し、その制御方法も任意である。電源回路POWの電源
制御回路VCTLは、リングオシレータROSCの周波
数をモニタする以外の手段を用いて、論理ゲートの動作
特性を識別することができるし、その識別結果による内
部電源電圧の選択方式も種々の実施例が考えられよう。
さらに、ディジタル信号処理装置DSP及び電源回路P
OWのブロック構成や電源電圧の極性及び絶対値等、種
々の実施形態を採りうる。
Although the invention made by the present inventor has been specifically described based on the embodiments, the invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say. For example, in FIG. 1, the number of voltage generating circuits provided in the power supply circuit POW is arbitrary, and the number of diodes forming each voltage generating circuit is also arbitrary. Also, the power circuit POW
Is an internal power supply voltage VCC by means other than a diode.
The potential of I may be changed or may be changed linearly. Switch means S1 to S3
May use a switch means other than the MOSFET, and its control method is also arbitrary. The power supply control circuit VCTL of the power supply circuit POW can identify the operating characteristics of the logic gate by using means other than monitoring the frequency of the ring oscillator ROSC, and various selection methods of the internal power supply voltage depending on the identification result. Examples of can be considered.
Further, the digital signal processor DSP and the power supply circuit P
Various embodiments can be adopted such as the block structure of the OW and the polarity and absolute value of the power supply voltage.

【0021】以上の説明では、主として本発明者によっ
てなされた発明をその背景となった利用分野であるディ
ジタル信号処理装置ならびにその電源回路に適用した場
合について説明したが、それに限定されるものではな
く、例えば、電源回路を内蔵するゲートアレイ集積回路
装置や各種のメモリ集積回路装置等にも適用できる。こ
の発明は、少なくとも電源回路を内蔵する半導体装置に
広く適用できる。
In the above description, the case where the invention made by the present inventor is mainly applied to the digital signal processing device and its power supply circuit, which are the fields of application in the background, has been described, but the invention is not limited thereto. For example, the invention can be applied to a gate array integrated circuit device including a power supply circuit and various memory integrated circuit devices. The present invention can be widely applied to semiconductor devices having at least a power supply circuit.

【0022】[0022]

【発明の効果】ディジタル信号処理装置等に内蔵される
電源回路を、外部電源電圧をもとに電位の異なる内部電
源電圧をそれぞれ形成する複数の電圧発生回路と、所定
の論理ゲートの動作特性をモニタして選択的に電源電圧
選択信号を形成する電源制御回路と、電源電圧選択信号
に従って選択的にオン状態とされ対応する電圧発生回路
から出力される内部電源電圧を選択的に内部回路に伝達
する複数のスイッチ手段とにより構成することで、内部
回路を構成する論理ゲート等の動作特性つまりは外部条
件に応じて内部電源電圧の電位を選択的に切り換えるこ
とができるため、ディジタル信号処理装置等の動作特性
を安定化してその品質を安定化できるとともに、内部電
源電圧の電位を内部回路の動作特性に応じて低めに設定
し、ディジタル信号処理装置等の低消費電力化を推進す
ることができる。
The power supply circuit incorporated in a digital signal processor or the like has a plurality of voltage generating circuits for forming internal power supply voltages having different potentials based on an external power supply voltage, and operating characteristics of a predetermined logic gate. A power supply control circuit that monitors and selectively forms a power supply voltage selection signal and an internal power supply voltage that is selectively turned on according to the power supply voltage selection signal and that is output from the corresponding voltage generation circuit is selectively transmitted to the internal circuit. By configuring it with a plurality of switch means, it is possible to selectively switch the potential of the internal power supply voltage according to the operating characteristics of the logic gates and the like that form the internal circuit, that is, the external conditions, so that the digital signal processing device, etc. The operating characteristics of the power supply can be stabilized and its quality can be stabilized, and the potential of the internal power supply voltage can be set to a low value in accordance with the operating characteristics of the internal circuit. It is possible to promote the low power consumption of such apparatus.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明が適用されたディジタル信号処理装置
の一実施例を示すブロック図である。
FIG. 1 is a block diagram showing an embodiment of a digital signal processing device to which the present invention is applied.

【図2】図2のディジタル信号処理装置の電源回路に含
まれる電源制御回路の一実施例を示すブロック図であ
る。
FIG. 2 is a block diagram showing an embodiment of a power supply control circuit included in the power supply circuit of the digital signal processing device of FIG.

【符号の説明】[Explanation of symbols]

DSP・・・ディジタル信号処理装置、IC・・・内部
回路、POW・・・電源回路、VCTL・・・電源制御
回路、D1〜D3・・・ダイオード、S1〜S3・・・
スイッチ手段。ROSC・・・リングオシレータ、FC
TR・・・周波数カウンタ、RSTC・・・リセット制
御回路、VSEL・・・電源選択回路。
DSP ... Digital signal processing device, IC ... Internal circuit, POW ... Power supply circuit, VCTL ... Power supply control circuit, D1 to D3 ... Diode, S1 to S3 ...
Switch means. ROSC ... Ring oscillator, FC
TR ... Frequency counter, RSTC ... Reset control circuit, VSEL ... Power supply selection circuit.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H03K 17/30 J 9184−5J 19/00 A 6959−5J ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Office reference number FI technical display location H03K 17/30 J 9184-5J 19/00 A 6959-5J

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 外部電源電圧をもとに所定の内部電源電
圧を形成しかつ所定の外部条件等に応じて上記内部電源
電圧の電位を選択的に切り換えうる電源回路を具備する
ことを特徴とする半導体装置。
1. A power supply circuit for forming a predetermined internal power supply voltage based on the external power supply voltage and selectively switching the potential of the internal power supply voltage according to a predetermined external condition or the like. Semiconductor device.
【請求項2】 上記電源回路は、外部電源電圧をもとに
電位の異なる内部電源電圧をそれぞれ形成する複数の電
圧発生回路と、所定の論理ゲートの動作特性をモニタし
て選択的に電源電圧選択信号を形成する電源制御回路
と、上記電源電圧選択信号に従って選択的にオン状態と
され対応する上記電圧発生回路から出力される内部電源
電圧を選択的に内部回路に伝達する複数のスイッチ手段
とを備えるものであることを特徴とする請求項1の半導
体装置。
2. The power supply circuit selectively monitors the operating characteristics of a plurality of voltage generation circuits that form internal power supply voltages having different potentials based on an external power supply voltage and a predetermined logic gate to selectively supply the power supply voltage. A power supply control circuit for forming a selection signal; and a plurality of switch means for selectively transmitting an internal power supply voltage output from the corresponding voltage generation circuit selectively turned on in accordance with the power supply voltage selection signal to the internal circuit. The semiconductor device according to claim 1, further comprising:
【請求項3】 上記半導体装置は、ディジタル信号処理
装置であって、上記電圧発生回路のそれぞれは、外部電
源電圧の電位をシフトして対応する内部電源電圧とする
所定数のダイオードを含むものであることを特徴とする
請求項1又は請求項2の半導体装置。
3. The semiconductor device is a digital signal processing device, wherein each of the voltage generating circuits includes a predetermined number of diodes for shifting a potential of an external power supply voltage to a corresponding internal power supply voltage. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device.
JP3216904A 1991-08-28 1991-08-28 Semiconductor device Pending JPH0556559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3216904A JPH0556559A (en) 1991-08-28 1991-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3216904A JPH0556559A (en) 1991-08-28 1991-08-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0556559A true JPH0556559A (en) 1993-03-05

Family

ID=16695741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3216904A Pending JPH0556559A (en) 1991-08-28 1991-08-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0556559A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7376848B2 (en) 1997-06-27 2008-05-20 Broadcom Corporation Battery powered device with dynamic power and performance management
JP2009015972A (en) * 2007-07-05 2009-01-22 Elpida Memory Inc Semiconductor memory device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7376848B2 (en) 1997-06-27 2008-05-20 Broadcom Corporation Battery powered device with dynamic power and performance management
US7900067B2 (en) 1997-06-27 2011-03-01 Broadcom Corporation Battery powered device with dynamic and performance management
US8504852B2 (en) 1997-06-27 2013-08-06 Broadcom Corporation Battery powered device with dynamic power and performance management
JP2009015972A (en) * 2007-07-05 2009-01-22 Elpida Memory Inc Semiconductor memory device
US7715263B2 (en) 2007-07-05 2010-05-11 Elpida Memory, Inc. Semiconductor memory device

Similar Documents

Publication Publication Date Title
JP3184265B2 (en) Semiconductor integrated circuit device and control method therefor
US6373321B1 (en) CMOS semiconductor device
US7042245B2 (en) Low power consumption MIS semiconductor device
US6043719A (en) Low-voltage, low-jitter voltage controlled oscillator
US4460835A (en) Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
US6191615B1 (en) Logic circuit having reduced power consumption
KR910004737B1 (en) Back bias voltage generating circuit
JP3533306B2 (en) Semiconductor integrated circuit device
US6864539B2 (en) Semiconductor integrated circuit device having body biasing circuit for generating forward well bias voltage of suitable level by using simple circuitry
JP2001156261A (en) Semiconductor integrated-circuit device
JPH0412649B2 (en)
JPH07326957A (en) Cmos circuit
US5264808A (en) Substrate potential adjusting apparatus
GB2249412A (en) Substrate voltage generator for a semiconductor device
US6252452B1 (en) Semiconductor device
US7605601B2 (en) Semiconductor integrated circuit device
JPH10189884A (en) Low power-consumption type semiconductor integrated circuit
JPH0556559A (en) Semiconductor device
US6621320B2 (en) Vcc independent time delay circuit
JPS60237720A (en) Output circuit
JP3144370B2 (en) Semiconductor device
JP3446735B2 (en) Semiconductor integrated circuit and semiconductor device control method
JP4027279B2 (en) Semiconductor integrated circuit device
JPH10187270A (en) Semiconductor integrated circuit device
KR950001433B1 (en) D flip-flop circuit