JPH0555011A - Manufacture of voltage-dependent nonlinear resistor - Google Patents

Manufacture of voltage-dependent nonlinear resistor

Info

Publication number
JPH0555011A
JPH0555011A JP3238943A JP23894391A JPH0555011A JP H0555011 A JPH0555011 A JP H0555011A JP 3238943 A JP3238943 A JP 3238943A JP 23894391 A JP23894391 A JP 23894391A JP H0555011 A JPH0555011 A JP H0555011A
Authority
JP
Japan
Prior art keywords
silicon dioxide
oxide
voltage
resistor
zinc oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3238943A
Other languages
Japanese (ja)
Other versions
JP2942027B2 (en
Inventor
Kunio Ohira
邦夫 大平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP3238943A priority Critical patent/JP2942027B2/en
Publication of JPH0555011A publication Critical patent/JPH0555011A/en
Application granted granted Critical
Publication of JP2942027B2 publication Critical patent/JP2942027B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To obtain a voltage-dependent nonlinear resistor whose characteristics are stable and not irregular by means of a granulation operation using a spray drier without temporarily baking silicon dioxide even when the amount of silicon dioxide added is large. CONSTITUTION:In the manufacturing method of a voltage-dependent nonlinear resistor, a zinc oxide raw material powder which contains zinc oxide as its main component and at least silicon dioxide as its additive is granulated, molded and baked. In the manufacturing method, a silicon dioxide powder is covered with a resistor-constituent-element simple substance or its oxide.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、避雷器等に用いる酸化
亜鉛を主成分とする電圧非直線抵抗体の製造方法に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a voltage non-linear resistor containing zinc oxide as a main component, which is used for lightning arresters and the like.

【0002】[0002]

【従来の技術】従来から酸化亜鉛を主成分とし、二酸化
ケイ素、酸化アンチモン、酸化ニッケル、酸化クロム、
酸化ビスマス、酸化マンガン等の小量の添加物を含有し
た抵抗体は、優れた電圧非直線性を示すことが広く知ら
れており、その性質を利用して避雷器等に使用されてい
る。特に、二酸化ケイ素は電気特性を向上するのに有効
なため、二酸化ケイ素を0.1 〜10モル%添加することを
行ってきた。
2. Description of the Related Art Conventionally, zinc oxide has been a main component, and silicon dioxide, antimony oxide, nickel oxide, chromium oxide,
It is widely known that a resistor containing a small amount of additives such as bismuth oxide and manganese oxide exhibits excellent voltage non-linearity, and it is used for a lightning arrester or the like by utilizing the property. In particular, since silicon dioxide is effective for improving the electric characteristics, 0.1 to 10 mol% of silicon dioxide has been added.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上述し
た従来の例のように、二酸化ケイ素を添加すると、酸化
亜鉛および他の添加剤と混合後スプレードライヤー等で
造粒する場合、混合物スラリーの粘性の変動が大きく、
特性が安定しない問題があった。また、二酸化ケイ素を
4モル%以上添加する場合には、混合物スラリーの粘性
が高くなりすぎてスプレードライヤー等による造粒が困
難となるため、添加剤を仮焼して添加剤の表面活性を少
なくした後酸化亜鉛粉末を混合して、スプレードライヤ
ーによる造粒を可能としているが、コストおよび時間の
かかる問題があった。
However, when silicon dioxide is added as in the above-mentioned conventional example, when the mixture is mixed with zinc oxide and other additives and then granulated by a spray dryer or the like, the viscosity of the mixture slurry is changed. The fluctuations are large,
There was a problem that the characteristics were not stable. When 4 mol% or more of silicon dioxide is added, the viscosity of the mixture slurry becomes too high and granulation by a spray dryer or the like becomes difficult. Therefore, the additive is calcined to reduce the surface activity of the additive. After that, the zinc oxide powder is mixed, and granulation by a spray drier is possible, but there is a problem that cost and time are required.

【0004】本発明の目的は上述した課題を解消して、
混合物スラリーの粘性の変動をを少なくし、特性の安定
した電圧非直線抵抗体を得ることができるとともに、二
酸化ケイ素添加量が多くても添加剤の仮焼を行わずにス
プレードライヤーにより造粒することのできる電圧非直
線抵抗体の製造方法を提供しようとするものである。
The object of the present invention is to solve the above problems,
It is possible to reduce the fluctuation of viscosity of the mixture slurry and obtain a voltage non-linear resistor with stable characteristics, and granulate with a spray dryer without calcining the additive even if the amount of silicon dioxide added is large. The present invention is intended to provide a method of manufacturing a voltage non-linear resistor that can be used.

【0005】[0005]

【課題を解決するための手段】本発明の電圧非直線抵抗
体の製造方法は、酸化亜鉛を主成分とし、少なくとも二
酸化ケイ素を添加剤として含有する酸化亜鉛原料粉末を
造粒、成形、焼成する電圧非直線抵抗体の製造方法にお
いて、二酸化ケイ素粉末を抵抗体構成元素単体あるいは
その酸化物により被覆したことを特徴とするものであ
る。
In the method for producing a voltage non-linear resistor according to the present invention, a zinc oxide raw material powder containing zinc oxide as a main component and at least silicon dioxide as an additive is granulated, molded and fired. The method for producing a voltage non-linear resistor is characterized in that a silicon dioxide powder is coated with a resistor constituent element alone or an oxide thereof.

【0006】[0006]

【作用】上述した構成において、添加剤のうち二酸化ケ
イ素粉末を亜鉛、アンチモン、ビスマス等の抵抗体構成
元素単体あるいはその酸化物により被覆しているため、
二酸化ケイ素粉末の表面活性を減らすことができ、混合
物スラリーの粘性の変動が少なくでき、その結果特性の
安定した電圧非直線抵抗体を得ることができる。また、
二酸化ケイ素の添加量が多い場合でも混合物スラリーの
粘性を低くできるため、添加剤の仮焼を行わなくてもス
プレードライヤーにより造粒することができ、低コスト
で電圧非直線抵抗体を得ることができる。
In the above-mentioned constitution, since the silicon dioxide powder among the additives is coated with the elemental element of the resistor such as zinc, antimony, bismuth or the oxide thereof,
The surface activity of the silicon dioxide powder can be reduced, the fluctuation of the viscosity of the mixture slurry can be reduced, and as a result, a voltage nonlinear resistor having stable characteristics can be obtained. Also,
Even if the amount of silicon dioxide added is large, the viscosity of the mixture slurry can be lowered, so that it is possible to granulate with a spray dryer without calcination of the additive, and it is possible to obtain a voltage nonlinear resistor at low cost. it can.

【0007】これは以下の理由による。すなわち、二酸
化ケイ素は酸化亜鉛等に比較して表面への水の吸着熱
(表面水酸基の生成熱)が小さいため水を吸着しやす
い。従って、二酸化ケイ素が多いと吸着される水(束縛
水)が多くなり、相対的にスラリー中の自由水(非束縛
水)が減少し、粘性が高くなるのを、二酸化ケイ素の表
面を改質して水の吸着を抑えることにより防止できるた
めである。なお、被覆する材料としては、抵抗体構成元
素単体あるいはその酸化物であれば何でも使用できる
が、酸化亜鉛に対し各種添加剤の添加量は微量であるた
め、酸化亜鉛を被覆材料として使用すると組成制御が容
易であるため好ましい。
This is for the following reason. That is, since silicon dioxide has a smaller heat of adsorption of water on the surface (heat of formation of surface hydroxyl groups) than zinc oxide or the like, it is more likely to adsorb water. Therefore, when the amount of silicon dioxide is large, the amount of adsorbed water (bound water) is large, the free water (unbound water) in the slurry is relatively reduced, and the viscosity becomes high. This is because it can be prevented by suppressing the adsorption of water. As the material to be coated, any resistor elemental element or its oxide can be used. However, since the amount of various additives added to zinc oxide is very small, the composition of zinc oxide as a coating material is small. It is preferable because it is easy to control.

【0008】[0008]

【実施例】酸化亜鉛を主成分とする電圧非直線抵抗体を
得るには、まず所定の粒度に調製した酸化亜鉛原料と所
定の粒度に調製した酸化ビスマス、酸化コバルト、酸化
マガン、酸化アンチモン、酸化クロム、二酸化ケイ素
(好ましくは非晶質)、酸化ニッケル、酸化ホウ素、酸
化銀よりなる添加物の所定量を混合する。なお、この場
合酸化銀、酸化ホウ素の代わりに硝酸銀、ホウ酸を用い
てもよい。好ましくは銀を含むホウケイ酸ビスマスガラ
スを用いるとよい。この際、これらの原料粉末に対して
所定量のバインダー(例えばポリビニルアルコール水溶
液)等を加える。また好ましくは硝酸アルミニウム水溶
液を加える。
EXAMPLE To obtain a voltage non-linear resistor containing zinc oxide as a main component, first, a zinc oxide raw material prepared to a predetermined particle size and bismuth oxide, cobalt oxide, magan oxide, antimony oxide prepared to a predetermined particle size, A predetermined amount of an additive consisting of chromium oxide, silicon dioxide (preferably amorphous), nickel oxide, boron oxide and silver oxide is mixed. In this case, silver nitrate or boric acid may be used instead of silver oxide or boron oxide. Bismuth borosilicate glass containing silver is preferably used. At this time, a predetermined amount of binder (for example, polyvinyl alcohol aqueous solution) or the like is added to these raw material powders. Also preferably, an aluminum nitrate aqueous solution is added.

【0009】本発明で重要なのは、上述した添加剤のう
ち二酸化ケイ素好ましくは非晶質の二酸化ケイ素粉末
に、抵抗体構成元素単体あるいはその酸化物例えば酸化
亜鉛、酸化ビスマス等を被覆させる点である。抵抗体構
成元素単体あるいはその酸化物の被覆方法は、被覆がで
きさえすればどのような方法でも良いが、母粒子(本発
明では二酸化ケイ素粉末)に目的とする子粒子(母粒子
の1/10以下程度の粒径の酸化亜鉛等の粒子) を混合機
に入れてまぶした後、衝撃力を主体とする機械的熱的エ
ネルギーを粒子に与え短時間で固定化または成膜処理を
行うマイクロカプセル化法を用いると好ましい。その
他、コーティング法、メカノケミカル反応法、界面沈澱
法等も好適に使用することができる。二酸化ケイ素粉末
の平均粒径は6μm 以下が好ましい。
What is important in the present invention is that, among the above-mentioned additives, silicon dioxide powder, preferably amorphous silicon dioxide powder, is coated with a resistor constituent element simple substance or its oxide such as zinc oxide or bismuth oxide. .. Any method may be used for coating the resistive element-constituting element alone or the oxide thereof, as long as the coating can be completed. However, the target child particles (silicon dioxide powder in the present invention) (child particles 1 / Microparticles (such as zinc oxide particles with a particle size of about 10 or less) are placed in a mixer and sprinkled, and then mechanical thermal energy, which is mainly an impact force, is applied to the particles to perform immobilization or film formation processing in a short time. It is preferable to use the encapsulation method. In addition, a coating method, a mechanochemical reaction method, an interfacial precipitation method and the like can be preferably used. The average particle size of the silicon dioxide powder is preferably 6 μm or less.

【0010】次に好ましくは200 mmHg以下の真空度で減
圧脱気を行い、混合泥漿の水分量は30〜40wt%程度が好
ましい。次に得られた混合泥漿を噴霧乾燥装置に供給し
て平均粒径50〜150 μm 、好ましくは80〜120 μm で、
水分量が0.5 〜2.0 wt%、より好ましくは 0.7〜1.5 wt
%の造粒粉を造粒する。次に得られた造粒粉を、成形工
程において、成形圧力800 〜1000kg/cm2 の下で所定の
形状に成形する。
Next, decompression and deaeration are preferably carried out at a vacuum degree of 200 mmHg or less, and the water content of the mixed slurry is preferably about 30 to 40 wt%. Then, the obtained mixed sludge is supplied to a spray dryer to have an average particle size of 50 to 150 μm, preferably 80 to 120 μm,
Moisture content 0.5-2.0 wt%, more preferably 0.7-1.5 wt
% Granulated powder. Next, the obtained granulated powder is molded into a predetermined shape under a molding pressure of 800 to 1000 kg / cm 2 in a molding step.

【0011】次に、その成形体を昇降温速度10〜100 ℃
/hr、温度400 〜700 ℃で有機成分を飛散除去し脱脂体
を得る。次に、脱脂体を昇温速度50〜70℃/hrで800 〜
1000℃、保持時間1〜5時間で焼成し、仮焼体を得る。
次に、仮焼体の側面に高抵抗層を形成する。本例では酸
化ビスマス、酸化アンチモン、酸化亜鉛、酸化ケイ素等
の所定量に有機結合剤としてエチルセルロース、ブチル
カルビトール、酢酸nブチル等を加えた絶縁被覆用混合
物ペーストを、30〜300 μm の厚さに仮焼体の側面に塗
布する。
Then, the molded body is heated and lowered at a temperature of 10 to 100 ° C.
/ Hr at a temperature of 400 to 700 ° C to scatter and remove organic components to obtain a degreased body. Next, the degreased body is heated to 800 ~ at a heating rate of 50 ~ 70 ° C / hr.
Baking is performed at 1000 ° C. for a holding time of 1 to 5 hours to obtain a calcined body.
Next, a high resistance layer is formed on the side surface of the calcined body. In this example, a mixture paste for insulation coating having a predetermined amount of bismuth oxide, antimony oxide, zinc oxide, silicon oxide, etc., added with ethyl cellulose, butyl carbitol, n-butyl acetate as an organic binder, has a thickness of 30 to 300 μm. Apply to the side of the calcined body.

【0012】次に、これを昇温速度20〜100 ℃/hr、最
高保持温度1000〜1300℃好ましくは1050〜1250℃、3〜
7時間という条件で本焼成する。この本焼成時の降温速
度を200 ℃/hrとすると好ましい。
Next, this is heated at a heating rate of 20 to 100 ° C./hr and a maximum holding temperature of 1000 to 1300 ° C., preferably 1050 to 1250 ° C., 3 to
The main firing is performed under the condition of 7 hours. It is preferable that the temperature lowering rate during the main firing is 200 ° C./hr.

【0013】その後、ガラス粉末に有機結合剤としてエ
チルセルロース、ブチルカルビトール、酢酸nブチル等
を加えたガラスペーストを前記側面の高抵抗層上に50〜
300μm の厚さに塗布し、空気中で昇降温度速度50〜200
℃/hr、400 〜800 ℃保持時間0.5 〜4時間という条
件で熱処理することによりガラス層を形成すると好まし
い。
Then, a glass paste obtained by adding ethyl cellulose, butyl carbitol, n-butyl acetate or the like to the glass powder as an organic binder is applied to the high resistance layer on the side surface by 50 to 50%.
Apply it to a thickness of 300 μm and raise and lower the temperature in air at a rate of 50 to 200.
It is preferable to form the glass layer by heat treatment under the conditions of 400 ° C./hr and 400 to 800 ° C. holding time of 0.5 to 4 hours.

【0014】その後、得られた電圧非直線抵抗体の両端
面をダイヤモンド砥石等で研磨する。次に、研磨面を洗
浄後、研磨した両端面に例えばアルミニウム等によって
電極を例えば溶射により設けて電圧非直線抵抗体を得
る。
Thereafter, both end faces of the obtained voltage non-linear resistor are polished with a diamond grindstone or the like. Next, after cleaning the polished surface, electrodes are provided on the polished both end surfaces by, for example, aluminum or the like by, for example, thermal spraying to obtain a voltage nonlinear resistor.

【0015】以下、実際に本発明範囲内および範囲外の
電圧非直線抵抗体について各種特性を測定した結果につ
いて説明する。実施例 上述した製造方法に従って、添加剤のうち表1に示すよ
うに二酸化ケイ素粉末に抵抗体構成元素単体あるいはそ
の酸化物を被覆した本発明範囲内の酸化亜鉛原料粉末と
二酸化ケイ素粉末に被覆処理を施さなかった本発明範囲
外の酸化亜鉛原料粉末およびそれらを仮焼処理した同じ
く本発明範囲外の酸化亜鉛原料粉末とから、直径50mm、
厚さ20mmの円板状の本発明試料 No.1〜14と比較例試料
No.1〜7の電圧非直線抵抗体を準備した。
The results of actually measuring various characteristics of voltage nonlinear resistors within and outside the range of the present invention will be described below. Example According to the above-mentioned manufacturing method, as shown in Table 1 of the additives, the coating treatment was performed on the raw material powder of zinc oxide and the silicon dioxide powder within the scope of the present invention in which the silicon dioxide powder was coated with the single element of the resistor or its oxide. From the zinc oxide raw material powder outside the scope of the present invention and the same zinc oxide raw material powder outside the scope of the present invention that was calcined, a diameter of 50 mm,
Disc-shaped present invention samples No. 1 to 14 having a thickness of 20 mm and comparative sample
The voltage nonlinear resistors of Nos. 1 to 7 were prepared.

【0016】その際、それぞれの酸化亜鉛原料粉末から
得た混合スラリーの粘性を測定するとともに、得られた
電圧非直線抵抗体の電流1mAにおける単位長さ当りの制
限電圧(V1mA ) 、制限電圧のバラツキの範囲(RV
1mA ) および開閉サージ放電耐量を求めた。また、使用
した酸化亜鉛の平均粒径も測定した。結果を表1に示
す。表1中、開閉サージ耐量は、2msの電流波形の開閉
サージ電流を20回印加した後の耐量をエネルギー値(ク
リア値)に換算したものから求めた。
At that time, the viscosity of the mixed slurries obtained from the respective zinc oxide raw material powders was measured, and the limiting voltage (V 1mA ) per unit length and the limiting voltage at a current of 1 mA of the obtained voltage nonlinear resistor were measured. Variation range (RV
1mA ) and switching surge discharge withstand capability were determined. The average particle size of the zinc oxide used was also measured. The results are shown in Table 1. In Table 1, the switching surge resistance was determined from the energy resistance (clear value) after converting the switching surge current having a current waveform of 2 ms for 20 times.

【0017】[0017]

【表1】 [Table 1]

【0018】表1の結果から、添加剤のうち二酸化ケイ
素粉末に酸化亜鉛、金属亜鉛、酸化ビスマス、酸化アン
チモン、酸化ニッケル等の抵抗体構成元素単体あるいは
その酸化物を被覆した本発明例は、被覆を行わなかった
比較例と比較して、制限電圧(V1mA )のバラツキが少
なく、開閉サージ放電耐量も高いことがわかる。
From the results shown in Table 1, among the additives, the present invention example in which silicon dioxide powder was coated with a resistor constituent element simple substance such as zinc oxide, metallic zinc, bismuth oxide, antimony oxide, nickel oxide or the like was obtained, It can be seen that the variation in the limiting voltage (V 1mA ) is small and the switching surge discharge withstand is high as compared with the comparative example in which the coating is not performed.

【0019】[0019]

【発明の効果】以上の説明から明らかなように、本発明
によれば、添加剤のうち二酸化ケイ素粉末に抵抗体構成
元素単体あるいはその酸化物を被覆することにより、制
限電圧(V1mA )のバラツキの少ない開閉サージ放電耐
量の良好な電圧非直線抵抗体を得ることができる。ま
た、本発明によれば、被覆層の作用により、二酸化ケイ
素を多量に含ませても混合スラリーの粘性を低くするこ
とができ、仮焼をしなくてもスプレードライヤーによる
造粒が可能であるため、低コストで電圧非直線抵抗体を
大量生産することができる。
As is clear from the above description, according to the present invention, the silicon dioxide powder among the additives is coated with the resistor constituent element simple substance or its oxide to reduce the limiting voltage (V 1mA ). It is possible to obtain a voltage non-linear resistor having a small variation and a good resistance to switching surge discharge. Further, according to the present invention, due to the action of the coating layer, the viscosity of the mixed slurry can be lowered even when a large amount of silicon dioxide is contained, and granulation by a spray dryer is possible without calcination. Therefore, the voltage nonlinear resistor can be mass-produced at low cost.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 酸化亜鉛を主成分とし、少なくとも二酸
化ケイ素を添加剤として含有する酸化亜鉛原料粉末を造
粒、成形、焼成する電圧非直線抵抗体の製造方法におい
て、二酸化ケイ素粉末を抵抗体構成元素単体あるいはそ
の酸化物により被覆したことを特徴とする電圧非直線抵
抗体の製造方法。
1. A method for producing a voltage nonlinear resistor, which comprises granulating, shaping, and firing a zinc oxide raw material powder containing zinc oxide as a main component and at least silicon dioxide as an additive, wherein the silicon dioxide powder is used as a resistor. A method of manufacturing a voltage non-linear resistor, characterized by being coated with an elemental element or its oxide.
JP3238943A 1991-08-27 1991-08-27 Method of manufacturing voltage non-linear resistor Expired - Lifetime JP2942027B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3238943A JP2942027B2 (en) 1991-08-27 1991-08-27 Method of manufacturing voltage non-linear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3238943A JP2942027B2 (en) 1991-08-27 1991-08-27 Method of manufacturing voltage non-linear resistor

Publications (2)

Publication Number Publication Date
JPH0555011A true JPH0555011A (en) 1993-03-05
JP2942027B2 JP2942027B2 (en) 1999-08-30

Family

ID=17037588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3238943A Expired - Lifetime JP2942027B2 (en) 1991-08-27 1991-08-27 Method of manufacturing voltage non-linear resistor

Country Status (1)

Country Link
JP (1) JP2942027B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150084879A (en) * 2012-11-12 2015-07-22 오레곤 스테이트 유니버시티 Amorphous metal thin-film non-linear resistor
CN116835975A (en) * 2023-07-05 2023-10-03 广东电网有限责任公司 ZnO polycrystalline ceramic with high breakdown field strength, preparation method and cable sheath protector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150084879A (en) * 2012-11-12 2015-07-22 오레곤 스테이트 유니버시티 Amorphous metal thin-film non-linear resistor
CN116835975A (en) * 2023-07-05 2023-10-03 广东电网有限责任公司 ZnO polycrystalline ceramic with high breakdown field strength, preparation method and cable sheath protector
CN116835975B (en) * 2023-07-05 2024-05-14 广东电网有限责任公司 ZnO polycrystalline ceramic with high breakdown field strength, preparation method and cable sheath protector

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