JPH0550883B2 - - Google Patents

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Publication number
JPH0550883B2
JPH0550883B2 JP16336385A JP16336385A JPH0550883B2 JP H0550883 B2 JPH0550883 B2 JP H0550883B2 JP 16336385 A JP16336385 A JP 16336385A JP 16336385 A JP16336385 A JP 16336385A JP H0550883 B2 JPH0550883 B2 JP H0550883B2
Authority
JP
Japan
Prior art keywords
switch
diode
switch diode
oscillation
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP16336385A
Other languages
Japanese (ja)
Other versions
JPS6223210A (en
Inventor
Akira Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16336385A priority Critical patent/JPS6223210A/en
Publication of JPS6223210A publication Critical patent/JPS6223210A/en
Publication of JPH0550883B2 publication Critical patent/JPH0550883B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】 産業上の利用分野 本発明は高周波ヘテロダイン信号処理における
局部発振回路に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a local oscillation circuit in high frequency heterodyne signal processing.

従来の技術 近年、局部発振回路は衛星放送受信機や
CATVコンバータの発達により、1〜2GHz帯で
発振させる局部発振回路がよく用いられるように
なつてきた。
Conventional technology In recent years, local oscillator circuits have been used in satellite broadcasting receivers and
With the development of CATV converters, local oscillation circuits that oscillate in the 1 to 2 GHz band have come into widespread use.

第2図は従来の局部発振回路を示し、1は発振
用トランジスタ、2はバイアス抵抗、3はバイパ
ス容量、4はチヨークコイル、5はエミツタ抵
抗、6,7は結合容量、8はバイアス抵抗、9は
可変容量ダイオード、10は共振体、11はバイ
アス抵抗、12はバイパス容量、13は小容量、
14はスイツチダイオード、15は結合容量、2
Aは同調電圧端子、2B+電源端子、2Cは発振
出力端子、2Dはスイツチ端子である。
Figure 2 shows a conventional local oscillation circuit, in which 1 is an oscillation transistor, 2 is a bias resistor, 3 is a bypass capacitor, 4 is a choke coil, 5 is an emitter resistor, 6 and 7 are coupling capacitors, 8 is a bias resistor, 9 is a variable capacitance diode, 10 is a resonator, 11 is a bias resistor, 12 is a bypass capacitor, 13 is a small capacitor,
14 is a switch diode, 15 is a coupling capacitance, 2
A is a tuning voltage terminal, 2B+ power supply terminal, 2C is an oscillation output terminal, and 2D is a switch terminal.

このような局部発振回路においては、トランジ
スタ1のコレクタに+電源端子2Bより電源を与
えるとともにコレクタをバイパス容量3により接
地すると、トランジスタ1のベース側から見たイ
ンピーダンスは負性特性になる。ここに共振線路
を接続すれば、この回路は共振線路との位相を補
償し、2nπ(n=±0、1、2、……)となる周
波数にて発振する。発振用トランジスタ3のエミ
ツタには電流制限用のエミツタ抵抗5と、出力を
とりだするためのチヨークコイル4とが直列に接
続されて接地されているため、発振出力は、結合
容量6を介して、発振出力端子2Cよりとり出す
ことができる。一方、共振線路は結合容量7を介
して可変容量ダイオード9と共振体10とスイツ
チダイオード14が結合容量15を介して直列に
接続され、他端が接地されている。可変容量ダイ
オード9のカソードにはバイアス抵抗8を介して
同調電圧端子2Aより同調電圧が加えられる。ま
た、スイツチダイオード14のアノードにはバイ
アス抵抗11を介してスイツチ端子2Dよりスイ
ツチダイオード14をオン−オフできる直流電位
が必要に応じて印加される。
In such a local oscillation circuit, when power is applied to the collector of the transistor 1 from the + power supply terminal 2B and the collector is grounded by the bypass capacitor 3, the impedance seen from the base side of the transistor 1 becomes a negative characteristic. If a resonant line is connected here, this circuit compensates the phase with the resonant line and oscillates at a frequency of 2nπ (n=±0, 1, 2, . . . ). Since the emitter of the oscillation transistor 3 is connected in series with an emitter resistor 5 for current limiting and a chiyoke coil 4 for taking out the output and grounded, the oscillation output is transmitted via the coupling capacitor 6. It can be taken out from the oscillation output terminal 2C. On the other hand, in the resonant line, a variable capacitance diode 9, a resonator 10, and a switch diode 14 are connected in series via a coupling capacitor 15 via a coupling capacitor 7, and the other end is grounded. A tuning voltage is applied to the cathode of the variable capacitance diode 9 from the tuning voltage terminal 2A via the bias resistor 8. Further, a direct current potential that can turn on and off the switch diode 14 is applied from the switch terminal 2D via the bias resistor 11 to the anode of the switch diode 14 as necessary.

第3図は同調電圧発振周波数の特性図で、曲線
Aはスイツチダイオード14がオンしているとき
の特性であり、曲線Bはスイツチダイオード14
をオフにしたときの曲線である。スイツチダイオ
ード14がオフになつたときには、逆バイアス容
量として1PF以下の特性になり。この容量が共振
系路に直列にはいるため、共振容量が小さく制御
され、同調電圧の変化に対する発振周波数の変化
が曲線Aよりも発振周波数が高い方に移動するの
である。
FIG. 3 is a characteristic diagram of the tuning voltage oscillation frequency, where curve A is the characteristic when the switch diode 14 is on, and curve B is the characteristic when the switch diode 14 is on.
This is the curve when it is turned off. When the switch diode 14 is turned off, the reverse bias capacitance becomes less than 1PF. Since this capacitance is connected in series to the resonant path, the resonant capacitance is controlled to be small, and the change in the oscillation frequency with respect to the change in the tuning voltage shifts to the side where the oscillation frequency is higher than the curve A.

さらに、発振用トランジスタ1として利用する
のは最大上限周波数が数GHz以上のものであり、
このようなトランジスタのコレクターベースの逆
バイアス容量は1PF程度のものが多い、実験した
ところでは共振系としては、この容量は、さらに
直列にはいるような動きをする。そのため、この
ような発振用トランジスタ1とスイツチダイオー
ド14を使用する汎用性のある構成では、同調電
圧として1〜30ボルトを使用する場合では、曲線
Aと曲線Bとはオーバーラツプすることがない
が、あつてもその範囲は極めて狭く、実用に耐え
ない状況になる。これを避けるために、第2図の
ように1〜2PF程度の小容量13を挿入して第3
図の曲線Cの特性を得られるものである。〔特開
昭59−149405号参照〕 発明が解決しようとする問題点 このような従来の構成では、スイツチダイオー
ド14がオン状態のとき付加した小容量13のた
めに共振系のインピーダンス、特に位相特性の変
化が極めて激しく、発振条件を満たす同調電圧が
不連続になり所望の周波数外で発振したり、最悪
の場合には発振停止となるという問題点を有して
いた。
Furthermore, the transistor used as the oscillation transistor 1 has a maximum upper limit frequency of several GHz or more,
The reverse bias capacitance of the collector base of such transistors is often around 1PF, and experiments have shown that in a resonant system, this capacitance behaves as if it were connected in series. Therefore, in a general-purpose configuration using such an oscillation transistor 1 and a switch diode 14, curves A and B do not overlap when a tuning voltage of 1 to 30 volts is used. Even if there were, the range would be extremely narrow and the situation would be impractical. In order to avoid this, a small capacity 13 of about 1 to 2 PF is inserted as shown in Figure 2.
The characteristic of curve C in the figure can be obtained. [Refer to Japanese Unexamined Patent Publication No. 59-149405] Problems to be Solved by the Invention In such a conventional configuration, the small capacitance 13 added when the switch diode 14 is in the on state reduces the impedance of the resonance system, especially the phase characteristics. The problem is that the tuning voltage that satisfies the oscillation conditions becomes discontinuous and oscillates at a frequency other than the desired frequency, or in the worst case, oscillation stops.

本発明は第3図の曲線Aと曲線Cとなる特性を
得て、なおかつ、特性を安定させることができる
局部発振回路を提供することを目的とする。
An object of the present invention is to provide a local oscillation circuit that can obtain the characteristics shown by curves A and C in FIG. 3 and can also stabilize the characteristics.

問題点を解決するための手段 本発明の局部発振回路は、発振用トランジスタ
のコレクタを交流的に接地し、そのベースと接地
間には可変容量ダイオードと、共振体または共振
線路と、スイツチダイオード部とを交流的に直列
接続し、前記可変容量ダイオードに同調電位を印
加して目的発振周波数出力を取り出し、前記スイ
ツチダイオード部の導通−非導通で同調電位に対
する発振周波数を切換えるよう構成すると共に、
前記スイツチダイオード部を、複数のスイツチダ
イオードは並列または直並列接続して導通時には
1個のスイツチダイオードの導通抵抗値より小さ
く、非導通時には1個のスイツチダイオードの逆
バイアス容量より大きくなるよう構成したことを
特徴とする。
Means for Solving the Problems In the local oscillation circuit of the present invention, the collector of the oscillation transistor is grounded in an alternating current manner, and a variable capacitance diode, a resonator or a resonant line, and a switch diode section are connected between the base and the ground. are connected in series in an alternating current manner, applying a tuning potential to the variable capacitance diode to extract a target oscillation frequency output, and switching the oscillation frequency with respect to the tuning potential by conduction/non-conduction of the switch diode section,
The switch diode section is configured such that a plurality of switch diodes are connected in parallel or series-parallel so that the conduction resistance value is smaller than the conduction resistance value of one switch diode when conducting, and larger than the reverse bias capacity of one switch diode when non-conducting. It is characterized by

作 用 この構成によると、スイツチダイオード部を複
数個のスイツチダイオードを並列または直並列接
続したため、スイツチダイオードの逆バイアス時
の容量を増加させると同時に、スイツチダイオー
ドがオン状態のときの導通抵抗分を減少させこと
ができ、動作は極めて安定になる。
Effects According to this configuration, the switch diode section has a plurality of switch diodes connected in parallel or series-parallel, which increases the reverse bias capacity of the switch diode and at the same time reduces the conduction resistance when the switch diode is in the on state. can be reduced and the operation becomes extremely stable.

実施例 以下、本発明の一実施例を第1図に基づいて説
明する。第1図は本発明の局部発振回路を示し、
第2図の従来例と同様の作用を成すものには同一
符号が付けられている。第1図は次の点が第2図
とは異つている。
Embodiment Hereinafter, an embodiment of the present invention will be described based on FIG. FIG. 1 shows a local oscillation circuit of the present invention,
Components having the same functions as those of the conventional example shown in FIG. 2 are given the same reference numerals. Figure 1 differs from Figure 2 in the following points.

つまり、小容量13が第1図では除去されてい
る点と、可変容量ダイオード9と共振体10の直
列回路にスイツチダイオード、14,16を並列
接続したスイツチダイオード部17が設けられて
いる点であつて、18は実装上の浮遊容量が表わ
している。これによりスイツチダイオードの逆バ
イアス容量が第2図の場合に比べて倍になり、導
通時の抵抗成分が半分になり、共振回路のQが大
きくなつて動作が安定するもので、浮遊容量の影
響も少なくなる。このことにより、第3図の曲線
A,Cの二つを得ることができる。図でD点、E
点は同調電位の最小点、最大点を示し、F点、G
点は発振周波数の必要範囲を示すものである。H
点は曲線Aの最大発振周波数であり、点は曲線
Bの最小発振周波数で、範囲(−H)が曲線
A,Bではカバーしきれない範囲である。ところ
が、本発明によれば、スイツチダイオード14,
16のオフ時の曲線はCのようになるから、その
最小発振周波数はJ点の周波数になり、これは曲
線A(スイツチダイオードオン時)の最大発振周
波数Hより小さいため、必要範囲F〜Gはすべて
得られるものである。
In other words, the small capacitor 13 is removed in FIG. 1, and a switch diode section 17 is provided in which switch diodes 14 and 16 are connected in parallel to the series circuit of the variable capacitance diode 9 and the resonator 10. 18 represents the stray capacitance due to mounting. As a result, the reverse bias capacitance of the switch diode is doubled compared to the case shown in Figure 2, the resistance component when conducting is halved, the Q of the resonant circuit is increased, and operation becomes stable, and the effect of stray capacitance is will also decrease. As a result, two curves A and C in FIG. 3 can be obtained. In the figure, point D, E
The points indicate the minimum and maximum points of the tuning potential, F point, G
The dots indicate the required range of oscillation frequency. H
The point is the maximum oscillation frequency of curve A, the point is the minimum oscillation frequency of curve B, and the range (-H) is the range that cannot be covered by curves A and B. However, according to the present invention, the switch diode 14,
Since the curve when 16 is off is like C, its minimum oscillation frequency is the frequency at point J, which is smaller than the maximum oscillation frequency H of curve A (when the switch diode is on), so the necessary range F to G are all obtainable.

このようにスイツチダイオード14,16を並
列に2個並べることにより回路の安定性を増しつ
つスイツチ手段により発振周波数の可変範囲を切
り替えて必要な範囲を連続的に確保することがで
きる。
By arranging the two switch diodes 14 and 16 in parallel in this manner, the stability of the circuit is increased and the variable range of the oscillation frequency can be switched by the switch means to continuously maintain the necessary range.

なお、上記実施例ではスイツチダイオード部1
7は2個のスイツチダイオード、14,16を使
用したが、必要な逆バイアス容量が小さい場合に
は、さらに数を増やしてもよい。また、必要な逆
バイアス容量が1個の逆バイアス容量の整数倍で
ないときは、スイツチダイオードを直並列に組み
合わせて所望の逆バイアス容量を得ることもでき
る。
In addition, in the above embodiment, the switch diode section 1
7 uses two switch diodes, 14 and 16, but the number may be increased if the required reverse bias capacitance is small. Further, when the required reverse bias capacitance is not an integral multiple of one reverse bias capacitance, the desired reverse bias capacitance can be obtained by combining switch diodes in series and parallel.

さらに、スイツチダイオード部17のスイツチ
ダイオードの実装に際しては、実装基板をはさん
で背中合わせに実装することにより、共振線路の
同じポイントを複数個のスイツチダイオードでス
イツチできる。
Furthermore, when mounting the switch diodes in the switch diode section 17, by mounting them back to back with mounting boards in between, it is possible to switch the same point on the resonant line with a plurality of switch diodes.

発明の効果 以上のように本発明の局部発振回路は、発振用
トランジスタのベースに可変容量ダイオードと、
共振体または線路と、複数個のスイツチダイオー
ドを並列あるいはその一部を直列に接続した回路
とを交流的に直列に接続して、導通時には1個の
スイツチダイオードの誘導抵抗値より小さく、非
導通時には1個のスイツチダイオードの逆バイア
ス容量より大きくなるようにしたため、より広い
周波数範囲を安定に動作させることができるもの
である。
Effects of the Invention As described above, the local oscillation circuit of the present invention includes a variable capacitance diode at the base of the oscillation transistor,
A resonator or a line and a circuit in which multiple switch diodes are connected in parallel or some of them in series are connected in series in an AC manner, and when conductive, the induced resistance value is smaller than that of a single switch diode, and the circuit is non-conductive. Since the reverse bias capacity is sometimes larger than the reverse bias capacity of one switch diode, it is possible to operate stably over a wider frequency range.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の局部発振回路の一実施例の構
成図、第2図は従来の局部発振回路の構成図、第
3図は同調電圧と発振周波数の関係図である。 1……発振用トランジスタ、3……バイパス容
量、9……可変容量ダイオード、10……共振
体、14,16……スイツチダイオード、17…
…スイツチダイオード部、2A……同調電圧端
子、2B……+電源端子、2C……発振出力端
子、2D……スイツチ端子。
FIG. 1 is a block diagram of an embodiment of the local oscillation circuit of the present invention, FIG. 2 is a block diagram of a conventional local oscillation circuit, and FIG. 3 is a diagram showing the relationship between tuning voltage and oscillation frequency. DESCRIPTION OF SYMBOLS 1... Oscillation transistor, 3... Bypass capacitor, 9... Variable capacitance diode, 10... Resonator, 14, 16... Switch diode, 17...
...Switch diode section, 2A...Tuning voltage terminal, 2B...+ power supply terminal, 2C...Oscillation output terminal, 2D...Switch terminal.

Claims (1)

【特許請求の範囲】 1 発振用トランジスタのコレクタを交流的に接
地し、そのベースと接地間には可変容量ダイオー
ドと、共振体または共振線路と、スイツチダイオ
ード部とを交流的に直列接続し、前記可変容量ダ
イオードに同調電位を印加して目的発振周波数出
力を取り出し、前記スイツチダイオード部の導通
−非導通で同調電位に対する発振周波数を切換え
るよう構成すると共に、前記スイツチダイオード
部を、複数のスイツチダイオードを並列または直
並列接続して導通時には1個のスイツチダイオー
ドの導通抵抗値より小さく、非導通時には1個の
スイツチダイオードの逆バイアス容量より大きく
なるよう構成した局部発振回路。 2 スイツチダイオード部の各ダイオードを、共
振線路を構成する実装基板の両面に分けて実装し
たことを特徴とする特許請求の範囲第1項記載の
局部発振回路。
[Claims] 1. The collector of the oscillation transistor is grounded in an alternating current manner, and a variable capacitance diode, a resonator or a resonant line, and a switch diode part are connected in series in an alternating current manner between the base and the ground, A tuning potential is applied to the variable capacitance diode to extract a target oscillation frequency output, and the oscillation frequency is switched with respect to the tuning potential by conduction/non-conduction of the switch diode section, and the switch diode section is configured to include a plurality of switch diodes. A local oscillator circuit in which the conduction resistance value is smaller than the conduction resistance value of one switch diode when conducting, and larger than the reverse bias capacity of one switch diode when non-conducting, by connecting them in parallel or in series and parallel. 2. The local oscillation circuit according to claim 1, wherein each diode of the switch diode section is separately mounted on both sides of a mounting board constituting a resonant line.
JP16336385A 1985-07-23 1985-07-23 Local oscillation circuit Granted JPS6223210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16336385A JPS6223210A (en) 1985-07-23 1985-07-23 Local oscillation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16336385A JPS6223210A (en) 1985-07-23 1985-07-23 Local oscillation circuit

Publications (2)

Publication Number Publication Date
JPS6223210A JPS6223210A (en) 1987-01-31
JPH0550883B2 true JPH0550883B2 (en) 1993-07-30

Family

ID=15772455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16336385A Granted JPS6223210A (en) 1985-07-23 1985-07-23 Local oscillation circuit

Country Status (1)

Country Link
JP (1) JPS6223210A (en)

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US9463744B2 (en) 2001-07-31 2016-10-11 Magna Electronics Inc. Driver assistance system for a vehicle
US9376060B2 (en) 2001-07-31 2016-06-28 Magna Electronics Inc. Driver assist system for vehicle
US9245448B2 (en) 2001-07-31 2016-01-26 Magna Electronics Inc. Driver assistance system for a vehicle
US9191574B2 (en) 2001-07-31 2015-11-17 Magna Electronics Inc. Vehicular vision system
US9171217B2 (en) 2002-05-03 2015-10-27 Magna Electronics Inc. Vision system for vehicle
US9555803B2 (en) 2002-05-03 2017-01-31 Magna Electronics Inc. Driver assistance system for vehicle
US8893193B2 (en) 2002-10-28 2014-11-18 Johnson Safety, Inc. Mobile video system
US9191634B2 (en) 2004-04-15 2015-11-17 Magna Electronics Inc. Vision system for vehicle
US9428192B2 (en) 2004-04-15 2016-08-30 Magna Electronics Inc. Vision system for vehicle
US11847836B2 (en) 2004-04-15 2023-12-19 Magna Electronics Inc. Vehicular control system with road curvature determination
US9008369B2 (en) 2004-04-15 2015-04-14 Magna Electronics Inc. Vision system for vehicle
US8977008B2 (en) 2004-09-30 2015-03-10 Donnelly Corporation Driver assistance system for vehicle
US9014904B2 (en) 2004-12-23 2015-04-21 Magna Electronics Inc. Driver assistance system for vehicle
US9193303B2 (en) 2004-12-23 2015-11-24 Magna Electronics Inc. Driver assistance system for vehicle
US9004588B2 (en) 2005-11-02 2015-04-14 Johnson Safety, Inc Headrest-mounted entertainment systems
US9018577B2 (en) 2007-08-17 2015-04-28 Magna Electronics Inc. Vehicular imaging system with camera misalignment correction and capturing image data at different resolution levels dependent on distance to object in field of view
US9509957B2 (en) 2008-07-24 2016-11-29 Magna Electronics Inc. Vehicle imaging system
US9041806B2 (en) 2009-09-01 2015-05-26 Magna Electronics Inc. Imaging and display system for vehicle
US9264672B2 (en) 2010-12-22 2016-02-16 Magna Mirrors Of America, Inc. Vision display system for vehicle
US9085261B2 (en) 2011-01-26 2015-07-21 Magna Electronics Inc. Rear vision system with trailer angle detection
US9146898B2 (en) 2011-10-27 2015-09-29 Magna Electronics Inc. Driver assist system with algorithm switching
US9446713B2 (en) 2012-09-26 2016-09-20 Magna Electronics Inc. Trailer angle detection system
US9558409B2 (en) 2012-09-26 2017-01-31 Magna Electronics Inc. Vehicle vision system with trailer angle detection

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