JPH0547171A - Bloch line memory - Google Patents

Abstract

PURPOSE:To provide the memory which allows the formation of both magnetic films on the same element and can be easily produced by constituting intra- surface magnetized film patterns and perpendicularly magnetized film patterns by varying the coercive forces thereof. CONSTITUTION:Plural striped magnetic domains 16 are parallel formed on a magnetic thin film 2 having perpendicular magnetic anisotropy and the perpendicular Bloch lines formed on the magnetic walls of such striped magnetic domains 16 are determined as a memory information unit. Guide magnetic domains 17 are formed on one end side in the extension direction of the striped magnetic domains 16. The striped magnetic domains 16 and the guide magnetic domains 17 are stabilized by the perpendicularly magnetized film patterns 7 laminated on the magnetic thin film 2. The recording bit positions on the striped magnetic domains 16 are stabilized by the intra-surface magnetized film patterns 4. The coercive forces of the intra-surface magnetized film patterns 4 and the perpendicularly magnetized film pattern 7 are varied. Both the magnetized films are stably magnetized in this way.

Description

Detailed Description of the Invention

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called Bloch line memory, which is a magnetic storage element having a vertical Bloch line existing in a domain wall of a stripe domain as an information carrier.

[0001]

2. Description of the Related Art Bloch line memories are described in, for example, Nikkei Electronics, August 15, 1983, Issue 141-167.
This is disclosed in the article on page and in Japanese Unexamined Patent Publication No. 60-113389, and this type of Bloch line memory has a negative perpendicularity present in a domain wall of a stripe domain of S = 0 in which a magnetic bubble is elongated and elongated. Bloch line (below -V
BL) is used as an information carrier and has come into the limelight as a high-density recording medium.

As shown in FIG. 4 which is an enlarged schematic plan view of a Bloch line memory, a magnetic thin film 2 made of a magnetic garnet film or the like is formed on a substrate 1 made of non-magnetic garnet or the like having a size of 5 mm. A minor loop portion 18 formed by arranging the magnetic domain walls of the stripe magnetic domains 16, that is, minor loops in parallel with each other, and a major line 19 facing one end portion thereof are provided. The major line 19 has a magnetic bubble transfer means 11 in which, for example, a pair of magnetic bubble transfer conductors (only one is shown in the drawing) are arranged. Then, for example, two chopping conductors 12 are formed between the minor loop portion 18 and the major line 19. These minor loop parts 1
A groove 5, a so-called fence groove, is provided around the entire circumference of 8 and the major line 19.

Further, between the minor loop portion 18 and the major line 19, a guide groove 14 for appropriately extending the stripe magnetic domain 16 at the time of recording / reproducing described later is provided.
Are provided at positions corresponding to the stripe magnetic domains 16.

On the stripe magnetic domains 16, as a bit stabilizing means for regularly arraying -VBL, which is a carrier of information, that is, bits along the magnetic domain walls of the stripe magnetic domains 16, for example, a surface of a pattern corresponding to each Bloch line array position is formed. There is a method of providing an inner magnetized film pattern 4, that is, a magnetized film having an easy axis of magnetization in the surface of the magnetic thin film 2 and magnetized in the in-plane direction, for example, as a pattern extending in a direction crossing the stripe magnetic domain 16. Such a method of stabilizing the bit by the in-plane magnetized film pattern 4 is disclosed in, for example, Japanese Patent Laid-Open No. 59-98384.

The stable position of the bit is the place where the energy in the vicinity of -VBL becomes the minimum, and in this case, the in-plane magnetic field amplitude is applied in the direction along the domain wall of the stripe magnetic domain 16. When the in-plane magnetized film pattern 4 is provided as described above, the magnetic field in the in-plane direction causes the leakage magnetic field of the in-plane magnetized film pattern 4 to cause an arrow m as shown in FIG. 5A. As shown in FIG. 5B, the in-plane magnetic field is periodically generated, and a periodic potential due to the periodic in-plane magnetic field corresponding to the pitch of the in-plane magnetized film pattern 4 is generated in the magnetic thin film 2. At the minimum portion 2h of the periodic in-plane magnetic field, the -VBL pair has a low magnetostatic energy, so that the -VBL pair is stably positioned. In this way, the in-plane magnetized film pattern 4 can stabilize the bit position, whereby a so-called shift register type memory for sequentially transferring bits can be obtained.

A recording method with such a configuration will be described with reference to FIG. FIG. 4 shows a state in which only the tip portion 16a of the stripe magnetic domain 16 in the uppermost row in FIG. 4 is extended toward the major line 19.

First, the magnetic bubbles are transferred along the major line 19 by the magnetic bubble transfer means 11, while the stripe magnetic domains 16 are expanded as shown in FIG. 4. If the magnetic bubbles do not exist, the stripe magnetic domains 16 are measured. The stripe magnetic domain 16 is extended up to the line 19 under the chopping conductor 12, but in the presence of a magnetic bubble, the stripe magnetic domain 16 is not extended due to the repulsion of the bubble. Therefore, only the stretched stripe magnetic domain 16 can be cut by the chopping conductor 12, whereby the -VBL pair can be formed only in the minor loop portion 18 of the stretched stripe magnetic domain 16. In this way, the presence / absence of magnetic bubbles is determined by -VB of the pair.
For example, "0" and "1" of the binary information converted to the presence / absence of L can be written.

As a reading method, for example, similarly, the stripe magnetic domain 16 is stretched and the chopping conductor 12 is expanded.
In the stretched minor loop part 18, -VB
It is possible to apply a required read current that is cut off only when L is present, and convert the presence or absence of -VBL into the presence or absence of a magnetic bubble to perform the read.

As described above, in the Bloch line memory, the stripe magnetic domain 1 is used as a field for storing the information.
6 is used, and it is necessary to regularly arrange the stripe magnetic domains 16 at predetermined positions. As the stripe magnetic domain stabilizing means, conventionally, for example, a method of stabilizing with a groove (groove), or a perpendicular magnetic film pattern provided on the magnetic thin film 2 corresponding to the stripe magnetic domain 16 and floating caused by the vertical magnetic film pattern are provided. A method of stabilizing by a magnetic field is disclosed in, for example, Japanese Patent Laid-Open No. 60-76080.

However, when both the bit position stabilizing means by the in-plane magnetic film pattern as described above and the position stabilizing means for the stripe magnetic domain 16 by the perpendicular magnetic film pattern as described above are provided together, a perpendicular magnetic film pattern is obtained. Since the direction of magnetization is different from that of the in-plane magnetized film pattern, it is difficult to perform proper magnetization, and it has not been practically possible to form the pattern in the same element.

Further, when the groove is arranged along the stripe magnetic domain 16 as a means for stabilizing the stripe magnetic domain 16 described above, there is a problem that the manufacturing process is complicated.

Similarly, in the guide groove 14 that regulates the extending direction of the stripe magnetic domain 16, there is a problem that the manufacturing process is complicated and that a practically satisfactory groove shape cannot be obtained.

[0013]

On the other hand, the applicant of the present invention previously filed Japanese Patent Application No. 2-264610, and as shown in FIG.
A structure is proposed in which stripe-shaped guide magnetic domains 17 are alternately formed on one end side in the extending direction of 6 and the stripe magnetic domains 16 and the guide magnetic domains 17 are stabilized by the perpendicular magnetization film pattern 7 laminated on the magnetic thin film 2. In the illustrated example, stripe magnetic domains 1 adjacent to each other in the recording / reproducing process.
6 is stretched to the left and right, and the minor loop 18
In this case, the major lines 19, that is, the magnetic bubble transfer means 11 and the chopping conductors 12 are provided at both ends of each of the lines, and recording and reproduction are performed on the major lines 19 at both ends.

With such a structure, the extension of the stripe magnetic domain 16 can be controlled by the adjacent stripe magnetic domain 16
It can be guided by the magnetic field potential between the guide magnetic domains 17 provided at one end of the stripe magnetic domain 16 and can be regulated in the longitudinal direction of the stripe magnetic domain 16. Since the guide magnetic domain 17 is stabilized by the stray magnetic field of the perpendicular magnetization film pattern 7 like the striped magnetic domain 16, the guide magnetic domain 17 is not cut by the local magnetic field for cutting at the time of recording / reproducing and has the same shape as it is. It is what is kept.

According to the present invention, the stripe magnetic domain stabilizing means by the perpendicular magnetization film pattern as described above and the bit position stabilizing means by the in-plane magnetization film pattern are combined in the same element, and the manufacturing process is simple. Aim to get line memory.

[0016]

FIG. 1 is a schematic enlarged plan view showing an example of a Bloch line memory according to the present invention. According to the present invention, as shown in FIG. 1, a plurality of stripe magnetic domains 16 are formed in parallel on a magnetic thin film 2 having perpendicular magnetic anisotropy, and a vertical Bloch line formed on a domain wall of the stripe magnetic domains 16 is used as a storage information unit. In the Bloch line memory, the guide magnetic domain 17 is formed on one end side in the extending direction of the stripe magnetic domain 16, and the stripe magnetic domain 16 and the guide magnetic domain 17 are stabilized by the perpendicular magnetization film pattern 7 laminated on the magnetic thin film 2. The recording bit position on the stripe magnetic domain 16 is stabilized by the in-plane magnetic film pattern 4, and the in-plane magnetic film pattern 4 and the perpendicular magnetic film pattern 7 are formed.
The coercive force of is different.

[0017]

As described above, in the Bloch line memory of the present invention, the in-plane magnetization film pattern 4 and the perpendicular magnetization film pattern 7 are provided with different coercive forces.
It was possible to easily and stably provide such magnetic film patterns having different magnetization directions on the same element.

To explain this, a perpendicular magnetic film pattern is provided as a stabilizing means for the stripe magnetic domain and the guide magnetic domain, and an in-plane magnetic film pattern is provided as a bit stabilizing means for the stripe magnetic domain to improve the coercive force of each magnetic film. Even if such magnetized films having different magnetization directions are provided close to each other, the magnetic fields having a larger coercive force than the two different coercive forces are applied so that the two magnetized films are temporarily made to have a different magnetic field. After being magnetized in the direction, a magnetic field having a relatively small coercive force and a magnitude less than the above-mentioned large coercive force is applied next, and only a magnetic film having a small coercive force is different from the above magnetic field application direction. It is possible to magnetize in both directions, and it is possible to reliably and stably magnetize both magnetized films. Therefore, it is possible to form both of these magnetization films, which could not be realized conventionally, in the same element.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An example of the Bloch line memory according to the present invention will be described in detail below with reference to manufacturing steps thereof with reference to the exploded perspective views of the essential portions of FIGS. 1 and 2 and the schematic cross-sectional enlarged view of FIG.
In FIG. 1, parts corresponding to those in FIGS. 4 and 6 are designated by the same reference numerals.

Also in this example, on the magnetic thin film 2 having perpendicular magnetic anisotropy, the stripe magnetic domains 16 whose magnetization directions are opposite to those of the surroundings and the guide magnetic domains 17 having a stripe shape, for example, are formed. As in the example described with reference to FIGS. 4 and 6, binary information “0” and “1” are recorded depending on the presence / absence of a pair of vertical Bloch lines existing along the domain wall of the stripe magnetic domain 16 with S = 0. Is.

Although FIG. 1 shows the case where four stripe magnetic domains 16 are formed in parallel for convenience, several hundred to several thousand stripe magnetic domains 16 are formed in parallel in a normal Bloch line memory.

Further, in this example, the guide magnetic domain 17 is similar to the example described with reference to FIG.
Are alternately provided on one end side in the longitudinal direction. That is, the stripe magnetic domains 16 adjacent to each other are stretched in opposite lateral directions along the guide magnetic domains 17 provided on the opposite sides.

The magnetic bubble transfer means 11 and the chopping conductors 12 are provided on both the left and right sides of the minor loop portion 18 in which the stripe magnetic domains 16 are arranged in FIG. 1, and the major lines 19 are provided on the left and right sides.

As a pattern along the contours of the stripe magnetic domain 16 and the guide magnetic domain 17, a perpendicular magnetization film pattern 7 is provided on the magnetic thin film 2 as shown by a broken line v in FIG. 1, and the perpendicular magnetization film pattern 7 floats. The stripe magnetic domain 16 and the guide magnetic domain 17 are stabilized by the magnetic field.

On the stripe magnetic domains 16, that is, on the magnetic thin film 2, as a bit position stabilizing means, the in-plane magnetized film pattern 4 crosses these stripe magnetic domains 16.
It is formed by patterning with a required width and pitch.

In this example, as shown in FIG. 2, an in-plane magnetized film pattern 4 magnetized in the in-plane direction indicated by arrow H _h on the magnetic thin film 2 via an insulating layer (not shown) or the like. And a vertically magnetized film pattern 7 magnetized in the vertical direction indicated by an arrow H _v extending in a direction traversing the in-plane magnetized film pattern 4 via an insulating layer (not shown) or the like. In that case, the manufacturing process will be described with reference to FIG. 3 showing an enlarged schematic sectional view taken along the line AA in FIG.

As shown in FIG. 3, a magnetic thin film made of, for example, magnetic garnet (YSmLuCa) ₃ (FeGe) ₅ O ₁₂ and having perpendicular magnetization is formed by epitaxial growth on a substrate 1 made of, for example, non-magnetic garnet Gd ₃ Ga ₅ O _12. 2 is, for example, 4 μm in thickness
To be deposited. In the peripheral portion of the magnetic thin film 2, for example, a groove so-called a fence groove (not shown) that exposes the base body 1 is provided as in the example described in FIGS. 4 and 6.

On the magnetic thin film 2, for example, a reflective film 3 made of Al or the like for observing magnetic domains has a thickness of, for example, 0.1 μm.
Co ₈₀ Pt ₂₀
(Atomic%) etc., and its coercive force Hc is 1 to 1, for example.
After the in-plane magnetized film pattern 4 of 0 kOe, for example, 1 kOe is deposited by sputtering or the like, it is formed into a desired pattern by application of photolithography or the like. For example, as shown in FIG. 1, this pattern extends in a direction crossing the stripe magnetic domain 16 and has a width of, for example, 0.1 to 10.
The pattern is 0.2 μm and the pitch is, for example, about 0.2 to 0.4 μm. The in-plane magnetization film pattern planarized entirely coated with the flattening film 5 made of polyimide or the like as the thickness of 0.5μm order of over 4, further having a thickness of, for example, 0 an insulating layer 6 made of SiO ₂ or the like. The thickness is 1 μm, and the entire surface is deposited by sputtering or the like.

A perpendicular magnetic film pattern 7 made of TbCo or the like and having a coercive force Hc of, for example, 10 kOe is formed on the insulating layer 6 by sputtering or the like to have a thickness of, for example, 0.1.
After deposition as μm, a desired pattern, for example, as shown in FIG. 1, is formed by applying photolithography or the like to a pattern substantially along the stripe magnetic domain 16 and the guide magnetic domain 17.

In this case, in the portion forming the stripe magnetic domain 16, for example, the width is 5 μm and the pitch is 12, for example.
˜14 μm. In the portion forming the guide magnetic domains 17, as described above, the stripe magnetic domains 16 are alternately arranged on one end side in the extending direction, for example, with a width of 5 μm and a pitch of 12 to 14 μm.

Then, a flattening film 8 made of polyimide or the like is applied thereon to have a thickness of 0.5 μm for flattening, and an insulating layer 9 made of SiO ₂ or the like is deposited thereon by sputtering or the like.

As shown in FIG. 1, magnetic bubble transfer means in which, for example, a pair of magnetic bubble transfer conductors (only one is shown in the figure) are arranged on the major lines 19 at both left and right ends. 11 are provided, and two chopping conductors 12 are formed between the left and right major lines 19 of the minor loop portion 18, respectively. The magnetic bubble transfer means 11 and the chopping conductor 12
Is, for example, on the insulating layer 9 and has a thickness of, for example, 0.02 μm.
After forming a laminated film of i or the like and Au or the like having a thickness of 0.5 μm, for example, it is formed by patterning into a desired pattern.

Then, with respect to the element formed by deposition,
First, a magnetic field of, for example, 15 kOe is applied in the direction perpendicular to the film surface to magnetize the perpendicular magnetization film pattern 7 in the perpendicular direction. Then, after that, a magnetic field of, for example, 2 kOe is applied along the in-plane direction of the magnetic thin film 2 in the longitudinal direction of the stripe magnetic domains 16, that is, in the direction crossing the bit pattern of the in-plane magnetized film pattern 4 to form the in-plane magnetized film pattern 4. Magnetize in the in-plane direction. At this time, since the perpendicular magnetization film pattern 7 has a coercive force of 10 kOe, which is larger than the in-plane applied magnetic field as described above, the perpendicular magnetization can be maintained without being affected by the in-plane magnetic field. Further, the in-plane magnetized film pattern 4 is once magnetized in the vertical direction by the vertical magnetic field, but since its coercive force is small, it is magnetized in the in-plane direction by the subsequent in-plane magnetic field.

In this way, the magnetization film patterns 4 and 7 can be easily and surely magnetized, and the stripe magnetic domains 16 of the magnetic thin film 2 are stably positioned below the perpendicular magnetization film pattern 7. It is possible to obtain the bit potential effective for the transfer of −VBL, and it is possible to arrange −VBL in the domain wall of the stripe magnetic domain 16 at a required interval. In this case, the perpendicular magnetization film pattern 7
Thus, the guide magnetic domain 17 can be stably positioned below the perpendicular magnetic film pattern 7. In the upper striped magnetic domain 16 in FIG.
FIG. 1 shows a state in which a guide magnetic domain 17 formed on an extension of an adjacent stripe magnetic domain 16 is extended to the left major line 19 in FIG.

Although TbCo is used as the material of the perpendicular magnetization film pattern 7 in the above example, other materials such as TbFe, TbFeCo, GdCo, GdTbFe and C are used.
A magnetic material such as o ₇₅ Pt ₂₅ or CoCr can be used.

The material of the in-plane magnetized film pattern 4 is not limited to the above-mentioned Co ₈₀ Pt ₂₀ , but other magnetic materials such as CoNi, CoNiCr, CoCrTa and SmCo can be used.

Furthermore, in the above-mentioned embodiment, the coercive force of the perpendicular magnetic film pattern 7 is set to 10 kOe and the coercive force of the in-plane magnetic film pattern 4 is set to 1 kOe. May be reversed, and the difference may be about 2 to 3 kOe or more. That is, even in the case of selecting in this way, as described above, the magnetic film having a relatively large coercive force is first applied with a magnetic field exceeding this coercive force in one direction, and then the magnetic field is relatively increased. By applying a magnetic field that exceeds the coercive force of the magnetized film having a small coercive force and does not exceed a relatively large coercive force to magnetize in the other direction, each magnetic film can be reliably and It can be stably magnetized in different directions.

In the above embodiment, the in-plane magnetized film pattern 4 is formed on the reflective film 3, and the perpendicular magnetized film pattern 7 is provided on the reflective film 3 with the flattening film 5 and the insulating layer 6 interposed therebetween. However, by doing so, the in-plane magnetized film pattern 4, that is, the bit stabilizing means whose width and pitch are smaller than that of the perpendicular magnetized film pattern 7, is closer to the magnetic thin film 2. That is, it has an advantage that a fine periodic magnetic field by the bit stabilizing means can be generated in the magnetic thin film 2 with high resolution. On the other hand, since the perpendicular magnetic film pattern 7, that is, the stripe magnetic domain stabilizing means has a relatively large width and pitch, the magnetic thin film 2 may be provided on the in-plane magnetic film pattern 4 via an insulating layer or the like. In addition, the leakage magnetic field due to the perpendicular magnetization can be applied with good resolution.

The Bloch line memory of the present invention is not limited to the case of adopting the above-mentioned configuration of the minor loop portion and the major line, but for example, the guide magnetic domain 17 is provided so as to be sandwiched at a position corresponding to the extension line of each stripe magnetic domain 16. Etc., various arrangement configurations can be adopted. As the pattern of the in-plane magnetized film pattern 4 as the bit stabilizing means of the stripe magnetic domains 16, in addition to the above-mentioned stripe-shaped arrangement structure that crosses each stripe magnetic domain 16, the stripe magnetic domains 16 are formed on and along the domain wall of each stripe magnetic domain 16. Required width,
Dot-like configuration with length and pitch, etc.
Various arrangement configurations can be adopted.

[0040]

As described above, according to the Bloch line memory of the present invention, the perpendicular magnetic film pattern is provided as the stabilizing means for the stripe magnetic domain and the guide magnetic domain, and the in-plane magnetic film pattern is provided as the bit stabilizing means for the stripe magnetic domain. By providing the magnetic films with different coercive forces, even if such magnetic films having different magnetization directions are provided close to each other, a magnetic field larger than the large coercive force of two different coercive forces is provided. After applying the magnetic field to magnetize both magnetic films in one direction, a magnetic field having a relatively small coercive force and smaller than the above large coercive force is applied to the magnetic film having a small coercive force. Only the magnetic field can be magnetized in a direction different from the above-mentioned magnetic field application direction, and both magnetized films can be magnetized reliably and stably. Therefore, both of these magnetic films, which could not be realized conventionally, can be formed in the same element.

Further, the perpendicular magnetic film pattern and the in-plane magnetic film pattern are compared with the case where other stripe magnetic domain stabilizing means and bit position stabilizing means are provided, for example, when a groove is provided as a stabilizing means of the stripe magnetic domain. do it,
The manufacturing process can be remarkably simplified, and the productivity can be improved.

[Brief description of drawings]

FIG. 1 is an enlarged schematic plan view of a main part of an example of a Bloch line memory of the present invention.

FIG. 2 is an exploded perspective view of a main part of an example of a Bloch line memory of the present invention.

FIG. 3 is an enlarged schematic cross-sectional view of a main part of an example of a Bloch line memory of the present invention.

FIG. 4 is an enlarged schematic plan view of an example of a conventional Bloch line memory.

FIG. 5 is an explanatory diagram of a bit stabilizing unit of a conventional Bloch line memory.

FIG. 6 is a schematic enlarged plan view of an example of a Bloch line memory.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Base 2 Magnetic thin film 3 Reflective film 4 In-plane magnetized film pattern 5 Flattening film 6 Insulating layer 7 Perpendicular magnetic film pattern 8 Flattening film 9 Insulating layer 11 Magnetic bubble transfer means 12 Chopping conductor 14 Guide groove 16 Stripe magnetic domain 17 Guide magnetic domain 18 minor loops 19 major lines

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[Procedure amendment]

[Submission date] December 17, 1991

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0001

[Correction method] Change

[Correction content]

[0001]

2. Description of the Related Art Bloch line memories are described in, for example, Nikkei Electronics, August 15, 1983, Issue 141-167.
Pages and articles, there is the disclosure of JP-A 60-113389 Patent Publication Laid Bloch line memory of this kind, the negative vertical Bloch lines existing in the magnetic wall of the elongated stretched stripe magnetic domains of magnetic bubble ( (Hereinafter referred to as "-VBL") is used as an information carrier and has come into the limelight as a high-density recording medium.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0020

[Correction method] Change

[Correction content]

Also in this example, on the magnetic thin film 2 having perpendicular magnetic anisotropy, the stripe magnetic domains 16 whose magnetization directions are opposite to those of the surroundings and the guide magnetic domains 17 having a stripe shape, for example, are formed. And like the example described in FIGS. 4 and 6, "0" of the binary information by the presence or absence of the vertical Bloch line pair present along the magnetic wall of the stripe magnetic domains 16 and records "1".

[Procedure 3]

[Document name to be amended] Statement

[Correction target item name] 0028

[Correction method] Change

[Correction content]

On the magnetic thin film 2, for example, a reflective film 3 made of Al or the like for observing magnetic domains has a thickness of, for example, 0.1 μm.
Co ₈₀ Pt ₂₀
(Atomic%) etc., and its coercive force Hc is 1 to 1, for example.
After the in-plane magnetized film pattern 4 of 0 kOe, for example, 1 kOe is deposited by sputtering or the like, it is formed into a desired pattern by application of photolithography or the like. As shown in FIG. 1, this pattern extends in a direction crossing the stripe magnetic domain 16 and has a width of, for example, 1 to 2 μm.
The pattern has m and a pitch of, for example, about 2 to 4 μm.
The in-plane magnetization film pattern planarized entirely coated with the flattening film 5 made of polyimide or the like as the thickness of 0.5μm order of over 4, further having a thickness of, for example, 0 an insulating layer 6 made of SiO ₂ or the like. The thickness is 1 μm, and the entire surface is deposited by sputtering or the like.

[Procedure amendment 4]

[Document name to be amended] Statement

[Name of item to be corrected] 0030

[Correction method] Change

[Correction content]

In this case, in the portion forming the stripe magnetic domain 16, for example, the width is 5 μm and the pitch is 12, for example.
˜14 μm. In the portion forming the guide magnetic domains 17, as described above, the stripe magnetic domains 16 are alternately arranged on one end side in the extending direction, for example, with a width of 5 μm and a pitch of 24 to 28 μm.

Claims (1)

[Claims] 1. A Bloch line memory in which a plurality of stripe magnetic domains are formed in parallel on a magnetic thin film having perpendicular magnetic anisotropy, and a vertical Bloch line formed on a domain wall of the stripe magnetic domains is a storage information unit. A guide magnetic domain is formed at one end side in the extending direction of the stripe magnetic domain, the stripe magnetic domain and the guide magnetic domain are stabilized by a perpendicular magnetization film pattern laminated on the magnetic thin film, and the recording bit position on the stripe magnetic domain is in-plane magnetized. A Bloch line memory, which is stabilized by a film pattern and has different coercive forces between the in-plane magnetized film pattern and the perpendicular magnetized film pattern.