JPH0538874U - Wiring connection structure of semiconductor device - Google Patents

Abstract

(57) [Summary] [Object] To provide a mounting structure of a semiconductor device capable of preventing a large crack from being generated at a joint portion between a resistor film and a conductor film. [Structure] A strip-shaped conductor film 12 disposed on a substrate 11,
The end of the resistor film 14 is superposed on the end of 13, and the conductor films 12 and 13 and the resistor film 14 are joined to each other via the superposed surface. Then, the conductor films 12, 1 extend in the width direction of the conductor films 12, 13 on the overlapping surface.
3 or the one side A on the side where the resistor film 14 is bent by a step is formed into a bent line having at least a straight line or a curved line, for example, a sawtooth shape, a comb shape, a wavy shape, or the like. 12 and 13 are formed respectively.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a wiring connection structure of a semiconductor device used for a thick film circuit board or a thin film circuit board, for example.

[0002]

[Prior Art]

 As a conventional wiring connection structure of a semiconductor device, a structure shown in FIGS. 4 and 5 is known. That is, the end portions of the resistor film 24 are superposed on the end portions of the strip-shaped conductor films 22 and 23 arranged on the substrate 21, and the conductor films 22 and 23 and the resistor film 24 are superposed on each other. It is joined through. Specifically, the conductor films 22 and 23 were superposed on the resistor film 24 so that the superposed surface was rectangular and one side in the width direction was formed as a straight line. The arrow indicates the current direction.

[0003]

[Problems to be solved by the device]

 However, in the wiring connection structure of the conventional semiconductor device, microcracks are generated in the resistor film 24 on one side of the end portions of the conductor films 22 and 23, and further, this is one continuous crack in the width direction. However, there was a problem in that it grew into a large crack C. Further, since the large crack C is generated substantially perpendicular to the direction of the current flowing through the semiconductor device (see FIG. 4), there is a problem that the characteristics of the resistor film 24 are greatly deteriorated. For example, a boundary layer having an abnormal resistance value may be formed at the joint between the resistor film 24 and the conductor films 22 and 23.

Therefore, an object of the present invention is to provide a wiring connection structure of a semiconductor device capable of preventing a large crack from being generated in a joint portion between a resistor film and a conductor film.

[0005]

In order to achieve the above object, in a wiring connection structure of a semiconductor device of the present invention, an end of a resistor film is provided at an end of a strip-shaped conductor film provided on a substrate. In the connection structure of the wiring of the semiconductor device in which the conductor film and the resistor film are joined together via the overlapping surface, the conductive film and the resistor film extend in the width direction of the conductive film on the overlapping surface. The conductor film or the resistor film is formed so that one side on the side where the conductor film or the resistor film is bent by a step is formed by a bending line having at least a straight line or a curved line.

[0006]

[Action]

 In the wiring connection structure of the semiconductor device configured as described above, in order to form the one side with a bent line having at least a straight line or a curved line, for example, a sawtooth shape, a comb shape, a wavy line shape, Since the conductor film is formed, even if a microcrack is generated in the resistor film on one side, it does not grow into a continuous large crack.

[0007]

【Example】

An embodiment of a wiring connection structure of a semiconductor device according to the present invention will be described below with reference to the drawings. 1 to 3 are plan views showing an outline of a wiring connection structure of a semiconductor device according to first to third embodiments of the present invention. As shown in FIG. 1 (first embodiment), the wiring connection structure of the semiconductor device according to the present invention is such that an alumina substrate 11 and a thick film containing silver are deposited on the alumina substrate 11 as a conductor paste. It is composed of strip-shaped conductor films 12 and 13 and a strip-shaped resistor film 14 that is bonded to these conductor films 12 and 13 and contains RuO ₂ and glass.

In the semiconductor device, conductor films 12 and 13 having a predetermined thickness are formed on an alumina substrate 11 by firing in a predetermined pattern. In this case, one side (one side in the width direction) A and B of the end portions of the conductor films 12 and 13 is formed in a sawtooth shape (see FIG. 1). Next, a rectangular resistor film 14 having a predetermined thickness is formed so as to cover the end portions of the conductor films 12 and 13. As a result, in the joint portion between the conductor films 12 and 13 and the resistor film 14, a force for expanding and contracting the conductor films 12 and 13 or the resistor film 14 is generated due to thermal stress during energization. Since one side A, B is formed in a sawtooth shape, this force is not concentrated in this part, but is dispersed. Therefore, even if microcracks occur at these joints, the microcracks are formed along the extending direction of the sides A 1 and B 2. Therefore, even if a plurality of microcracks occur, the directions in which these microcracks extend differ from each other, so that they do not greatly grow into one continuous crack. Even if microcracks are formed along the sides A and B of the end portions of the conductor films 12 and 13, the sides A and B are not perpendicular to the current direction during energization but intersect at a predetermined angle. Therefore, the characteristics of the resistor 14 do not deteriorate. The arrows in the figure indicate the direction of current flow. Therefore, electromigration of Ag does not occur much in the resistor film 14 other than the tip end of the sawtooth shape.

Further, as shown in FIG. 2 (second embodiment) and FIG. 3 (third embodiment), one side of the end portions of the conductor films 15 and 16 and the conductor films 17 and 18 has a comb shape. It may be formed in a wavy shape. By forming in this way, the same effect as the first embodiment can be obtained.

In addition, one side of the end of the conductor film is not limited to the sawtooth shape, the wedge shape, and the wavy shape, and may be formed to have a composite shape of these shapes. In addition, the projection-shaped portions of the conductor films 12, 13, 15, 16, 17, and 18 in FIGS. 1 to 3 are rounded and processed so that thermal stress is not concentrated when energized. is there . Further, in each of the above-described embodiments, the protruding portions of the sides A and B may be positioned so as to be displaced so that the protruding portions do not come too close to each other. By arranging the projecting portions in such a staggered manner in this manner, concentration of thermal stress can be prevented.

[0011]

[Effect of the device]

 Since the present invention is configured as described above, it is possible to prevent a large crack from growing along the width direction at the joint between the resistor film and the conductor film. Further, electromigration of metal in the conductor film to the resistor film can be prevented.

[Brief description of drawings]

FIG. 1 is a plan view of a wiring connection structure of a semiconductor device according to a first exemplary embodiment of the present invention.

FIG. 2 is a plan view of a wiring connection structure of a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a plan view of a wiring connection structure of a semiconductor device according to a third exemplary embodiment of the present invention.

FIG. 4 is a plan view of a wiring connection structure of a semiconductor device according to a conventional example.

FIG. 5 is a sectional view of a semiconductor device according to a conventional example.

[Explanation of symbols]

 11 substrate 12 conductor film 13 conductor film 14 resistor film 15 conductor film 16 conductor film 17 conductor film 18 conductor film

Claims (1)

[Scope of utility model registration request] 1. An end portion of a resistor film is superposed on an end portion of a strip-shaped conductor film provided on a substrate, and the conductor film and the resistor film are joined via the superposed surface. In the connection structure of the wiring of the semiconductor device, one side that extends in the width direction of the conductor film on the overlapping surface and is bent by the step is formed on the conductor film or the resistor film.
A wiring connection structure for a semiconductor device, wherein the conductor film or the resistor film is formed so as to be formed by a bent line having at least a straight line or a curved line.