JPH05347402A - Organic electric field switching device - Google Patents

Abstract

PURPOSE:To obtain an organic electric field switching device which can be easily composed of a solid state device. CONSTITUTION:In order to apply an electric field to a hetero-junction film 13 composed of molecular films 13a and 13b which have different oxidation-reduction potentials respectively, a light transmitting upper electrode 17 and a conductive lower electrode 11 are provided and a light transmitting insulating film 14 is provided between the hetero-junction film 13 and the upper electrode 17 and an insulating film 12 is provided between the hetero-junction film 13 and the lower electrode 11. Further, a source electrode 15 and a drain electrode 16 which detect a current flowing along the hetero- junction plane are formed. A voltage is applied between the upper and lower electrodes 17 and 11 and, at the same time, a light is applied to the hetero-junction film and carriers are injected into the hetero-junction film 13 from the lower electrode 11 side or the source electrode 14 side to facilitate control of a current between the electrodes 15 and 16. With this constitution, the high doping speed of the carriers can be obtained, a higher operation speed can be obtained than in the case of using ions, the device like this can operate as a solid state device and the device can be formed on a semiconductor such as a silicon substrate, so that the integration level of the devices can be substantially increased by employing a multilayer structure.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an element that can be switched by an electric field and light, and can be easily formed into a solid element.
Moreover, the present invention relates to an organic electric field switching element which has a neural information processing function called a multi-input / 1-output conversion function.

[0002]

2. Description of the Related Art Conventionally, as an element for performing switching by changing conductivity between a source electrode and a drain electrode by doping gas or ions into an organic film, a field effect using a conductive polymer material has been used. There is a type transistor. In this case, the doping is generally carried out electrochemically in an aqueous solution or using a solid electrolyte, or by doping by gas diffusion in an oxidizing gas atmosphere. Then, in the conductive polymer material, when the amount of the dopant changes by several percent, the conductivity changes into an erroneous difference, so that the electric field switching element can be realized by controlling the amount of the dopant by the electric field.

FIG. 5 shows, for example, Elizabeth W. Poul and Antonio J. Ricco.
And Mark S. Wright
Ton) et al. Journal of Physical Chemistry (J. Physical Chemistry),
vol. 89, p. FIG. 14 is a configuration diagram showing a conventional organic electric field switching element utilizing electric field injection of carriers into a conductive polymer material reported in 1441 (1985). In the figure, 1 is a polyaniline film which is a conductive constituent material, 2
Is a source electrode, 3 is a drain electrode, 4 is a sodium hydrogen sulfate electrolyte solution, and 5 is a reference electrode which contains an electrolyte solution therein and is immersed in the electrolyte solution 4.

Next, the operation will be described. When a positive gate electrode (0 to 0.3 V) is applied to the polyaniline film 1 via the reference electrode 5 and the sodium hydrogensulfate electrolyte solution 4, the polyaniline film 1 is electrochemically oxidized to change its conductivity. Source electrode 2 and drain electrode 3
Slowly sweep the voltage between (0-200 mV, 10
mV / sec), a characteristic like a field effect transistor is obtained between the drain current flowing between these electrodes and the gate voltage.

[0005]

Since the conventional organic electric field switching device is constructed in this way, the conductive polymer material is electrochemically oxidized and reduced to dope the carrier, and the conductivity of the carrier is reduced. If the change is to be used for switching, an electrolyte solution or a reference electrode containing the electrolyte solution must be used, and it is difficult to make this element a solid element. Since the same potential is applied to the whole electrolyte solution, it is difficult to selectively dope the conductive polymer material only at predetermined multiple locations using multiple reference electrodes, thus converting multiple inputs into one output. There was a problem that I could not.

The present invention has been made in order to solve such a problem. Since the organic film can be doped with a carrier without using an electrolyte solution, a solid-state device can be formed and a plurality of input electrodes can be formed. By forming individually, it is possible to dope locally, so that multiple inputs /
It is an object of the present invention to provide an organic electric field switching element having a neural information processing function called a one-output conversion function.

[0007]

According to another aspect of the present invention, there is provided an organic electric field switching element including a lower electrode, a first insulating film partially formed on the lower electrode, and the first insulating film. A heterojunction film formed on the film and the lower electrode and composed of a plurality of molecular films having different redox potentials; a light-transmissive second insulating film formed on the heterojunction film; A source electrode and a drain electrode formed on the heterojunction film by penetrating the second insulating film;
And a light-transmissive upper electrode formed on the insulating film.

According to another aspect of the organic electric field switching element of the present invention, there is provided a lower electrode, a first insulating film partially formed on the lower electrode, the first insulating film and the lower part. A heterojunction film formed on the electrode and composed of a plurality of molecular films having different redox potentials, a light-transmissive second insulating film formed on the heterojunction film, and a second
A source electrode and a drain electrode formed on the heterojunction film and penetrating the insulating film, and a plurality of light-transmissive upper electrodes formed on the second insulating film. Is.

[0009]

According to the invention of claim 1, the lower electrode and the light-transmissive upper electrode are arranged in the direction perpendicular to the bonding surface of the heterojunction film composed of a plurality of molecular films having different redox potentials, with the insulating film interposed therebetween. Then, by applying a voltage between these electrodes and irradiating the heterojunction film with light through the light-transmissive upper electrode and the insulating film, carriers (electrons or positive electrons) are introduced into the heterojunction film from the lower electrode or source electrode side. Hole). As a result, the doping speed of the carrier is high, and the dopant is not an ion requiring an electrolyte solution but an electron or a hole which is a general carrier of a solid-state device, so that the operating speed is higher than that of an ion. Moreover, an organic electric field switching element that can operate as a solid-state element can be obtained. Since this element can be easily formed on a semiconductor such as silicon, the multi-layer structure can dramatically increase the degree of integration of the element.

According to the second aspect of the invention, a plurality of light-transmitting upper electrodes are arranged. Thus, by controlling the conductivity between the source electrode and the drain electrode with a plurality of input signals applied to the respective upper electrodes, a neural information processing (neural network) that converts the plurality of input signals into a single output signal. It is also possible to add a multi-input / single-output conversion function, which is essential for).

[0011]

EXAMPLES Example 1. An embodiment of the present invention will be described below with reference to the drawings. 1A and 1B show an embodiment of the present invention. FIG. 1A is a sectional view thereof and FIG. 1B is a top view thereof. In the figure, 11 is a lower electrode formed of a conductive material such as metal, 12 is a first insulating film partially provided on the lower electrode 11, and 13 is formed on the lower electrode 11 and the insulating layer 12. The heterojunction film 13 has a junction between molecular films having different redox potentials, and the heterojunction film 13 includes a molecular film 13a having a certain redox potential and a molecular film 13b having a redox potential different from the molecular film 13a. Consists of.

Reference numeral 14 denotes a light-transmissive second insulating film formed on the heterojunction film 13. The insulating film 14 is made of, for example, a long chain fatty acid such as arachidic acid or stearic acid. Is used. Reference numeral 15 denotes a source electrode formed on the heterojunction film 13 by partially penetrating the insulating film 14 and made of a conductive material such as metal, and 16 denotes the insulating film 14.
Is a drain electrode made of a conductive material such as metal and provided on the hetero-junction film 13 partially penetrating through the film, and 17 is a light-transmissive upper electrode formed on the insulating film 14. The transparent upper electrode 17 has, for example, a thickness of 10
A semi-transparent aluminum electrode of about nm or an ITO (indium tin oxide) electrode which is a transparent electrode is used. Reference numeral 18 denotes light emitted from an external light source (not shown) to the heterojunction film 13 through the light-transmissive upper electrode 17 and the insulating film 14.

Next, the manufacturing method thereof will be described. First, for example, an aluminum deposition film of 50 to 100 n is formed as a lower electrode 11 on a substrate (not shown) by a vacuum deposition method.
m, and an insulating film 12 is formed on top of it, for example, SiO
After forming _two films by vacuum vapor deposition or sputter vapor deposition to a thickness of about 50 to 100 nm, partial patterning is performed using a semiconductor fine processing technique. On top of that, for example, hematoporphyrin IX-bis (tridecanoyl ether) ruthenium diphos. Fin chain bromine salt (hematoporphyrin (I
X) -bis (tridecanoylether) R
u (P (OCH ₃ ) ₃ ) ₂ Br: RuHP (PH) ₂ is abbreviated as 9-layer Langmuir project (Langmu)
ir-Blodgett (LB) method.

On the molecular film 13a, a molecular film 13b having a redox potential different from that of the molecular film 13a, for example, 7,8-dimethyl-3,10-dinonylisoalloxazine (7,
8-dimethyl-3,10-dinonyi
Heterojunction film 13 is formed by stacking 10 layers of soaloxiazine (abbreviated as DNI) by the LB method. Then, several tens of light-transmissive insulating films 14 made of long-chain fatty acids such as arachidic acid and stearic acid are formed on the heterojunction film 13 by the LB method. Then, this insulating film 14 is partially etched to form a source electrode 15 and a drain electrode 16 which penetrate the insulating film 14 and come into contact with the molecular film 13b with, for example, a vapor deposition film of aluminum, and the upper electrode 17 is used as the insulating film 14 Form on top.

Next, the operation will be described. Upper electrode 17
When a voltage is applied between the source electrode 15 and the drain electrode 16 with no voltage applied between the lower electrode 11 and the lower electrode 11, there are few carriers in the heterojunction film 13, and a leak current at almost the same level as that of the insulating films 12 and 14 is generated. To be observed. Next, through the upper electrode 17 and the insulating film 14, for example D
The source electrode 15 and the drain electrode in a state where a voltage is applied between the upper electrode 17 and the lower electrode 11 while irradiating the heterojunction film 13 with light having an NI excitation wavelength of 360 nm or 450 nm at an intensity of about 1 mW / cm ^2. A voltage is applied between 16.

Then, by utilizing the internal electric field of the heterojunction film of DNI and RuHP (Ph) ₂ , charge separation and charge separation occurred with photoexcitation of DNI as an initial process, and the junction surface of the heterojunction film 13 increased. Carriers are generated, and carriers are doped by the voltage from the lower electrode 11 or source electrode 15 side, and these carriers accumulate near the junction surface of the heterojunction film 13. As a result, the number of carriers increases, so the source electrode The conductivity between 15 and the drain electrode 16 is improved, and the current flowing between the source electrode 15 and the drain electrode 16 is increased. Since the number of carriers depends on the voltage applied between the upper electrode 17 and the lower electrode 11, that is, the electric field strength and the light intensity irradiated through the upper electrode 17 and the insulating film 14, these two parameters are used to determine the source electrode 15 and the drain electrode. 16
The current value between can be controlled.

Embodiment 2. FIG. 2 is a top view showing another embodiment of the present invention. In this embodiment, a plurality of light-transmitting upper electrodes are arranged in parallel with the source electrode and the drain electrode. That is, in the figure, 19 is a plurality of light-transmitting upper electrodes arranged in parallel between the source electrode 15 and the drain electrode 16. When a plurality of input signals are applied as voltages to the upper electrodes 19 respectively, and at the same time, all of the upper electrodes 19 are irradiated with light capable of exciting DNI,
A current according to the sum of a plurality of these input voltages flows between the source electrode 15 and the drain electrode 16, and one important configuration of a neural network capable of converting a plurality of input signals (voltages) into one output signal (current). An element multi-input / one-output conversion function is obtained.

When the distance between the source electrode 15 and the drain electrode 16 and the distance between the upper electrodes 19 are reduced to the submicron region, light capable of exciting DNI through the upper electrodes 19 and the insulating film 14 is heterojunction film 13. When a voltage is applied to each upper electrode 19 and the lower electrode 11 while irradiating the same, carriers are doped into the heterojunction film 13 below each upper electrode 19, but the regions where carriers are doped with time Spreads from the portion of the heterojunction film 13 below each upper electrode 19 by seeping out, and the multi-input / 1-output conversion function characteristic changes to a non-linear characteristic with time. As a result, the learning function which is an element function of the neural network, that is, the source electrode 1
The function of changing the threshold value of the current flowing between the drain electrode 16 and the drain electrode 16 according to the number of input signals applied to each upper electrode 19 is also obtained. Further, the input signal can be arbitrarily set by selecting the upper electrode that transmits the irradiated light.

Example 3. FIG. 3 is a top view showing another embodiment of the present invention. In this embodiment, a plurality of light-transmitting upper electrodes are arranged in series with the source electrode and the drain electrode. That is, in the figure, 20 is the source electrode 1.
5 and a plurality of light-transmitting upper electrodes arranged in series between the drain electrode 16 and the drain electrode 16. When a plurality of input signals are applied as voltages to the respective upper electrodes 20 and at the same time all of the respective upper electrodes 20 are irradiated with light, the source electrode 15 and the drain electrode 16 between the source electrode 15 and the drain electrode 16 when all the plurality of input voltages are present. Current flows through the source electrode 15 and the drain electrode 16 unless one of the plurality of input voltages described above flows, so that a plurality of input signals (voltages) can be converted into one output signal (current). The multi-input / single-output conversion function, which is one of the important components of the network, is obtained.

When the distance between the source electrode 15 and the drain electrode 16 and the distance between the upper electrodes 20 are reduced to a submicron region, light capable of exciting DNI through the upper electrodes 20 and the insulating film 14 is heterojunction film 13. When a voltage is applied to each of the upper electrode 20 and the lower electrode 11 while irradiating the same, carriers are doped into the heterojunction film 13 under the upper electrode 20, but the region where carriers are doped with time By spreading from the portion of the heterojunction film 13 below each upper electrode 20 by seeping out, the multi-input / 1-output conversion function characteristic changes to a non-linear characteristic with time.

That is, when the distance between the source electrode 15 and the drain electrode 16 and the distance between the upper electrodes 20 are large to some extent as described above, current flows between the source electrode 15 and the drain electrode 16 if there is no input voltage. The source electrode 15 and the drain electrode 16 do not flow.
If the distance between the upper electrodes 20 is reduced to the submicron region, for example, if there is an input voltage to at least 7 upper electrodes 20 out of 10 upper electrodes 20,
A current flows between the source electrode 15 and the drain electrode 16, and as a result, in this case, a learning function, which is an elemental function of the neural network, that is, the threshold value of the current flowing between the source electrode 15 and the drain electrode 16 is higher than each upper part. A function of changing according to the number of input signals applied to the electrodes 20 is also obtained. Further, the input signal can be arbitrarily set by selecting the upper electrode that transmits the irradiated light.

Example 4. FIG. 4 is a top view showing still another embodiment of the present invention. In this embodiment, a plurality of light-transmitting upper electrodes are arranged in a matrix with respect to the source electrode and the drain electrode. That is, in the figure, 21 is a plurality of light-transmissive upper electrodes arranged in a matrix between the source electrode 15 and the drain electrode 16.
A plurality of input signals are applied as voltages to the matrix-shaped upper electrodes 21, respectively, and at the same time, these upper electrodes 2 are simultaneously applied.
When all of the 1's are irradiated with light capable of exciting DNI, the input voltages are input only to all the upper electrodes 21 in the series direction (row direction) between the source electrode 15 and the drain electrode 16 in the input direction. A current flows between the source electrode 15 and the drain electrode 16 according to the number of columns of the upper electrodes 21 in the serial direction to which a voltage is applied, so that a plurality of matrix-shaped input signals (voltages) are converted into one output signal (current).
The multi-input / one-output conversion function, which is one of the important components of the neural network that can be converted into the input signal, is obtained.

When the distance between the source electrode 15 and the drain electrode 16 and the distance between the upper electrodes 21 are reduced to the submicron region, light capable of exciting DNI through the upper electrodes 21 and the insulating film 14 is heterojunction film 13. When a voltage is applied to each upper electrode 21 and the lower electrode 11 while irradiating the same, carriers are doped in the heterojunction film 13 below each upper electrode 21, but the regions where the carriers are doped with time Spreads from the portion of the heterojunction film 13 below each upper electrode 21 by seeping out, and the multi-input / 1-output conversion function characteristic changes to a non-linear characteristic with time.

That is, when the distance between the source electrode 15 and the drain electrode 16 and the distance between the respective upper electrodes 21 are large to some extent, the value of the current between the source electrode 15 and the drain electrode 16 is changed by the matrix-like connection in the series direction. However, if the distance between the source electrode 15 and the drain electrode 16 and the distance between the upper electrodes 21 are reduced to the sub-micron region, the input voltage actually depends on the total number of the matrix-shaped upper electrodes 21. A current flows between the source electrode 15 and the drain electrode 16 in accordance with the ratio of the number of the upper electrodes 21. As a result, in this case, the learning function, which is an element function of the neural network, that is, the source electrode 15 and the drain electrode The threshold value of the current flowing between the electrodes 16 is the number of input signals applied to each upper electrode 21. Function that changes according also obtained. Further, the input signal can be arbitrarily set by selecting the upper electrode that transmits the irradiated light.

[0025]

As described above, according to the invention of claim 1, the lower electrode, the first insulating film partially formed on the lower electrode, the first insulating film, and the above-mentioned A heterojunction film formed on the lower electrode and composed of a plurality of molecular films having different redox potentials, a light-transmissive second insulating film formed on the heterojunction film, and the second insulating film. Since a source electrode and a drain electrode formed on the heterojunction film through the film and a light-transmissive upper electrode formed on the second insulating film are provided, the carrier doping rate is increased. Is fast, and since the dopant is not an ion that requires an electrolyte solution but an electron or a hole that is a general carrier of a solid-state device, the operating speed is higher than that of an ion, and it can operate as a solid-state device. Moreover, semiconductors such as silicon The multi-layer structure since it can be easily formed, there is an effect that it is possible to dramatically increase the degree of integration of elements.

According to the invention of claim 2, the lower electrode, the first insulating film partially formed on the lower electrode, and the first insulating film and the lower electrode are formed. Was
A heterojunction film composed of a plurality of molecular films having different redox potentials, a light-transmissive second insulating film formed on the heterojunction film, and the heterojunction film penetrating the second insulating film. Since the source electrode and the drain electrode formed on the film and the plurality of light-transmissive upper electrodes formed on the second insulating film are provided, the carrier doping rate is high, and Since the dopant is not an ion that requires an electrolyte solution but an electron or a hole that is a general carrier of a solid-state device, it operates faster than an ion and can operate as a solid-state device, and a semiconductor such as silicon. Since it can be easily formed on top, the multi-layer structure can dramatically increase the degree of integration of the device,
Furthermore, it is possible to obtain a multi-input / 1-output conversion function that is indispensable for neural information processing (neural network) of converting a plurality of input signals into a single output signal, and also a learning function that is an element function of the neural network. There is an effect.

[Brief description of drawings]

FIG. 1 is a cross-sectional view and a top view showing an embodiment of an organic electric field switching element according to the present invention.

FIG. 2 is a top view showing another embodiment of the organic electric field switching element according to the present invention.

FIG. 3 is a top view showing another embodiment of the organic electric field switching element according to the present invention.

FIG. 4 is a top view showing still another embodiment of the organic electric field switching element according to the present invention.

FIG. 5 is a cross-sectional structure diagram showing a conventional organic electric field switching element.

[Explanation of symbols]

 11 Lower electrode 12 Insulating film 13 Heterojunction film 13a, 13b Molecular film 14 Light transmissive insulating film 15 Source electrode 16 Drain electrode 17, 19-21 Light transmissive upper electrode

[Procedure amendment]

[Submission date] October 30, 1992

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] 0002

[Correction method] Change

[Correction content]

[0002]

2. Description of the Related Art Conventionally, as an element for performing switching by changing conductivity between a source electrode and a drain electrode by doping gas or ions into an organic film, a field effect using a conductive polymer material has been used. There is a type transistor. In this case, the doping is either electrochemically carried out using an aqueous solution or a solid electrolyte, or a method of doping the gas diffusion in a gas atmosphere of an oxidizing is generally performed. Then, in the conductive polymer material, when the amount of the dopant changes by several percent, the conductivity changes into an erroneous difference, so that the electric field switching element can be realized by controlling the amount of the dopant by the electric field.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be corrected] 0003

[Correction method] Change

[Correction content]

FIG. 5 shows, for example, Elizabeth W. Poul and Antonio J. Ricco.
And Mark S. Ryton (Mark S.Wrig
Hton) et al. in the Journal of Physical Chemistry (J. Physical Chemistry),
vol. 89, p. FIG. 14 is a configuration diagram showing a conventional organic electric field switching element utilizing electric field injection of carriers into a conductive polymer material reported in 1441 (1985). In the figure, 1 is a polyaniline film which is a conductive constituent material, 2
Is a source electrode, 3 is a drain electrode, 4 is a sodium hydrogen sulfate electrolyte solution, and 5 is a reference electrode which contains an electrolyte solution therein and is immersed in the electrolyte solution 4.

[Procedure 3]

[Document name to be amended] Statement

[Correction target item name] 0004

[Correction method] Change

[Correction content]

Next, the operation will be described. Positive gate charge
When a pressure (0 to 0.3 V) is applied to the polyaniline film 1 via the reference electrode 5 and the sodium hydrogensulfate electrolyte solution 4, the polyaniline film 1 is electrochemically oxidized to change its conductivity, and at that time, the source electrode. 2 and drain electrode 3
Slowly sweep the voltage between (0-200 mV, 10
mV / sec), a characteristic like a field effect transistor is obtained between the drain current flowing between these electrodes and the gate voltage.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0006

[Correction method] Change

[Correction content]

The present invention has been made in order to solve such a problem. Since the organic film can be doped with a carrier without using an electrolyte solution, a solid-state device can be formed and a plurality of input electrodes can be formed. by pieces formed, Ki out locally doping, and an object thereof is to provide an organic electroluminescent switching element showing a neural information processing function that multiple-input / one-output conversion function.

[Procedure Amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction content]

Next, the manufacturing method thereof will be described. First, for example, an aluminum deposition film of 50 to 100 n is formed as a lower electrode 11 on a substrate (not shown) by a vacuum deposition method.
m, and an insulating film 12 is formed on top of it, for example, SiO
After forming _two films by vacuum vapor deposition or sputter vapor deposition to a thickness of about 50 to 100 nm, partial patterning is performed using a semiconductor fine processing technique. On top of that, for example, hematoporphyrin IX-bis (tridecanoyl ether) ruthenium diphos. Fin complex body odor Motoshio (hematoporphyrin (I
X) -bis (tridecanoylether) R
u (P (OCH ₃ ) ₃ ) ₂ Br: RuHP ( ph ) ₂ is a nine-layer Langmuir project (Langmu)
ir-Blodgett (LB) method.

[Procedure Amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0016

[Correction method] Change

[Correction content]

[0016] Then, DNI and RuHP (p h) ₂ heterozygous film utilized to photoexcitation the initial stage and the collector load isolation DNI an internal electric field of the junction surface of the heterojunction layer 13 by charge transfer occurs career occurs, also the carrier from the lower electrode 11 or the source electrode 15 side by the voltage doped, these carriers are accumulated in the vicinity of the junction surface of the heterojunction layer 13, so a result, many number of carriers source conductivity between the electrode 15 and the drain electrode 16 is increased, the current flowing between the source electrode 15 and drain electrode 16 is increased. Since the number of carriers depends on the voltage applied between the upper electrode 17 and the lower electrode 11, that is, the electric field strength and the light intensity irradiated through the upper electrode 17 and the insulating film 14, these two parameters are used to determine the source electrode 15 and the drain electrode. The current value between 16 can be controlled.

[Procedure Amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0021

[Correction method] Change

[Correction content]

That is, when the distance between the source electrode 15 and the drain electrode 16 and the distance between the upper electrodes 20 are large to some extent as described above, current flows between the source electrode 15 and the drain electrode 16 if there is no input voltage. that was flow Lena Kka, between the source electrode 15 and drain electrode 16 a distance, reducing the distance between the upper electrode 20 to the sub-micron region, for example of the ten upper electrode 20 at least 7 or more When an input voltage is applied to the upper electrode 20, a current flows between the source electrode 15 and the drain electrode 16, and as a result, a learning function, which is an element function of the neural network in this case, that is, the source electrode 15
It is also possible to obtain the function that the threshold value of the current flowing between the drain electrode 16 and the drain electrode 16 changes according to the number of input signals applied to each upper electrode 20. Further, the input signal can be arbitrarily set by selecting the upper electrode that transmits the irradiated light.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Satoshi Nishikawa 8-1-1 Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation Central Research Laboratory

Claims (2)

[Claims] 1. A lower electrode, a first insulating film partially formed on the lower electrode, and a plurality of different redox potentials formed on the first insulating film and the lower electrode. A heterojunction film formed of the above molecular film, a light-transmissive second insulating film formed on the heterojunction film, and formed on the heterojunction film penetrating the second insulating film. An organic electric field switching device comprising: a source electrode and a drain electrode; and a light-transmissive upper electrode formed on the second insulating film. 2. A lower electrode, a first insulating film which is partially formed on the lower electrode, and a plurality of plural electrodes which are formed on the first insulating film and the lower electrode and have different redox potentials. A heterojunction film formed of the above molecular film, a light-transmissive second insulating film formed on the heterojunction film, and formed on the heterojunction film penetrating the second insulating film. An organic electric field switching device comprising: a source electrode and a drain electrode; and a plurality of light-transmissive upper electrodes formed on the second insulating film.