JPH05335276A - Cooling piping structure of semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To provide a cooling piping structure of a semiconductor manufacturing device capable of reducing an outer diameter all of the pipings while sharply improving cooling efficiency of the whole equipment. CONSTITUTION:This is a semiconductor manufacturing device provided with a device main body 11, where a sample stand 18 to be loaded with a substrate 17 is arranged in a processing chamber, and a cooler 22 arranged outside the device main body 11 while supplying a cooling agent to the sample stand 18 through a cooling piping 21 and cooling the substrate 17 loaded with a sample stand 18 by a cooling action of the cooling agent supplied from the cooler 22. Further, the cooling piping 21 consists of a first piping 21a for supplying the cooling agent to the sample stand 18 and a second piping 21b, in the inside of which this first piping 21a is about concentrically arranged and a pressure reduced layer 24 is formed in the gap part of these first piping 21a and the second piping 21b.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cooling pipe structure of a semiconductor manufacturing apparatus having a function of cooling a substrate placed on a sample table.

[0002]

2. Description of the Related Art In recent years, some semiconductor manufacturing apparatuses have been proposed for the purpose of keeping the temperature of a substrate or the like as a sample to be processed at a low temperature (for example, below 0 ° C.) to suppress unnecessary reactions and improve the processing accuracy. Has been done.

FIG. 6 is a schematic block diagram showing an example of a conventional semiconductor manufacturing apparatus. In this conventional example, a plasma processing apparatus will be described as an example among semiconductor manufacturing apparatuses. In the illustrated plasma processing apparatus 50, 51
Is an apparatus main body, which is separated into a plasma generation chamber 52 and a decompression processing chamber (etching chamber) 53. A coil 54 for magnetic field generation is arranged around the plasma generation chamber 52, and a magnetron 56 for microwave oscillation is provided above the coil 54 via a waveguide 55.

On the other hand, in the decompression processing chamber 53 of the apparatus main body 51, a sample table 58 for mounting a substrate 57 which is a sample to be processed is arranged. An exhaust port 59 is provided in the lower part of the decompression processing chamber 53, and the decompression processing chamber 53 is decompressed to a predetermined pressure through the exhaust port 59.

In addition, a high frequency power source 60 for exciting plasma discharge is connected to the lower surface side of the sample table 58. A solvent flow passage (not shown) is formed inside the sample stage 58, and a cooling pipe 61 is connected to the lower surface side of the sample stage 58 in a state of communicating with the solvent flow passage. Further, one end side of the cooling pipe 61 is connected to a cooler 62 arranged outside the apparatus main body 51.
The cooling solvent is supplied from 2 through the cooling pipe 61. That is, the cooling solvent sent out from the cooler 62 is supplied to the sample stage 53 via the cooling pipe 61, and the substrate 57 placed on the sample stage 53 is cooled by the cooling action of this cooling solvent.

Further, as shown in FIG. 7, a heat insulating material 63 is wound around the outside of the cooling pipe 61 arranged on the outside of the apparatus main body 51. This is to prevent dew condensation on the outer peripheral surface of the cooling pipe 61 when the cooling pipe 61 is cooled by the cooling solvent, and at the same time, the heat of the cooling solvent is released to the atmosphere through the cooling pipe 61. This is to prevent the cooling efficiency from decreasing.

[0007]

However, in the conventional device 50, the outer peripheral surface of the cooling pipe 61 is covered with the heat insulating material 6.
By coating with 3, the outer diameter of the entire pipe including the heat insulating material 63 becomes very large, and it was necessary to secure a large piping space for the device. Also,
Insulation failure occurs due to deterioration or deterioration of the heat insulating material 63 due to long-term use, which causes a dew condensation phenomenon, which causes various troubles (for example, condensed water adheres to electric wiring in the device or the like to cause a short circuit). There was a risk of inviting. Further, the cooling pipe 61 arranged on the inner side of the apparatus main body 51 is not subjected to the heat insulating treatment by the heat insulating material 63 because the airtightness of the decompression processing chamber 53 cannot be maintained. The heat loss of the cooling solvent in the above causes a significant decrease in the cooling efficiency of the entire apparatus.

The present invention has been made in order to solve the above problems, and can reduce the outer diameter of the entire pipe,
Moreover, it is an object of the present invention to provide a cooling piping structure for a semiconductor manufacturing apparatus capable of significantly improving the cooling efficiency of the entire apparatus.

[0009]

SUMMARY OF THE INVENTION The present invention has been made to achieve the above object, and an apparatus main body in which a sample table on which a substrate is placed is arranged in a processing chamber, and an external body of the apparatus main body. A semiconductor manufacturing apparatus for cooling a substrate placed on the sample stage by a cooling action of the cooling solvent supplied from the cooler. The cooling pipe comprises a first pipe for supplying a cooling solvent to the sample stage, and a second pipe in which the first pipe is arranged substantially concentrically inside.
This is a cooling piping structure for a semiconductor manufacturing apparatus in which a decompression layer is formed in a gap portion between the first piping and the second piping.

[0010]

In the cooling pipe structure of the semiconductor manufacturing apparatus of the present invention, the heat insulating state of the cooling pipe is maintained by the pressure reducing layer formed in the gap between the first pipe and the second pipe. Also,
Since the cooling pipes arranged on the inner side of the apparatus main body are also kept in the heat insulating state in the same manner as described above, the heat loss of the cooling solvent on the inner side of the apparatus main body is significantly reduced as compared with the conventional case. Further, the heat insulation of the cooling pipe is further enhanced by the coating layer formed on the inner peripheral surface or the outer peripheral surface of the first pipe and the second pipe.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a cooling pipe structure of a semiconductor manufacturing apparatus according to the present invention will be described below with reference to the drawings. Figure 1
It is a schematic block diagram which shows the Example of this invention. In addition, in the present embodiment, of the semiconductor manufacturing apparatuses, a plasma processing apparatus will be described as an example. The illustrated plasma processing apparatus 1
In 0, 11 is the apparatus main body, 12 is the plasma generation chamber,
Reference numeral 13 is a decompression processing chamber, 14 is a coil for generating a magnetic field, 15 is a waveguide, 16 is a magnetron for microwave oscillation, 17 is a substrate to be processed, and 18 is a substrate 1.
A sample table on which 7 is mounted, 19 is an exhaust port for reducing the pressure of the decompression processing chamber 13, 20 is a high frequency power source for exciting plasma discharge, 21 is a cooling pipe, 22 is a cooling pipe 2
1 is a cooler for supplying a cooling solvent to the sample stage 18 via 1.

In the configuration of the plasma processing apparatus 10 of this embodiment, as shown in FIG. 2, first, the cooling pipe 21 arranged on the outside of the apparatus main body 1 supplies the cooling solvent to the sample table 18. And a second pipe 2 in which this first pipe 21a is arranged substantially concentrically inside.
1b and. Further, the first pipe 21a
A pressure reducing layer 24 is formed in the gap between the second pipe 21b and the second pipe 21b. The decompression layer 24 is formed by exhausting the air in the gap between the pipes 21a and 21b with an exhaust system (not shown), and after exhausting, is completely sealed from the outside by welding or the like. Incidentally, in this embodiment, the pressure of the decompression layer 24 is set to 1 Torr or less.

By forming the decompression layer 24 in the gap between the pipes 21a and 21b as described above, the thermal conductivity in the outer portion of the cooling pipe 21 is extremely lowered, and conversely, the heat insulation of the cooling pipe 21 is performed. The sex will be greatly enhanced. When this is shown by a specific numerical value, in the conventional method, a heat insulating material having a thickness of 2 to 5 cm had to be wound around the cooling pipe, but in the case of the present embodiment, the thickness of the decompression layer 24 is secured to be about several mm. If so, practically sufficient heat insulation can be obtained.

Further, comparing the outer diameter of the entire pipe between the conventional pipe and this embodiment, assuming that the same heat insulation property is ensured, the diameter of the entire pipe in the conventional pipe was 50 to 100 mm. In the example, φ15 to 25 mm is sufficient. In other words, the outer diameter of the entire pipe can be reduced to about 1/4 of the conventional one. As a result, a considerable margin can be provided in the piping space of the apparatus, and thus the thickness of the decompression layer 24 can be sufficiently secured even if the outer diameter of the entire piping is halved as compared with the conventional one. As a result, the outer diameter of the entire pipe is made smaller than before, and the cooling pipe 21
It is possible to remarkably improve the heat insulating property of. Moreover, unlike the conventional case, the heat insulating material is not deteriorated and deteriorated so that the heat insulating failure does not occur, and the trouble caused by the dew condensation phenomenon is surely prevented.

Further, the plasma processing apparatus 10 of the present embodiment.
Then, the cooling pipe 21 arranged inside the apparatus main body 11
Also has the same structure as described above, and each of the pipes 21
A pressure reducing layer 24 is formed in the gap between a and 21b.
As a result, like the external side of the device body 11 described above,
The heat insulation of the cooling pipe 21 on the inner side of the device body 11 is also ensured.

By the way, in the conventional heat insulation method using a heat insulating material, the cooling pipe arranged inside the apparatus main body can be heat insulated because the airtightness of the decompression chamber cannot be maintained. However, since the heat insulating method using the double piping structure is used in this embodiment, the heat insulating treatment can be performed without any trouble. As a result, the heat loss of the cooling solvent on the inner side of the apparatus body 11 is significantly reduced as compared with the conventional case.

In addition, the plasma processing apparatus 10 of this embodiment
In FIG. 3, a coating layer 25 as shown in FIG. 3 is formed on the outer peripheral surface and the inner peripheral surface of the first pipe 21a and the second pipe 21b by a coating process. Here, for example, stainless steel or steel is used as the material of the pipes 21a and 21b, whereas the material of the coating layer 25 has a lower thermal conductivity than the material of the pipes 21a and 21b. Teflon, alumina, carbon, amorphous silicon, or the like is used.

When the coating layer 25 is formed on each of the pipes 21a and 21b as described above, the heat insulating property of the cooling pipe 21 is further enhanced as compared with the case where no coating treatment is applied. The coating layer 25 is
It is preferable to form it on both the inner peripheral surface and the outer peripheral surface of each of the pipes 21a and 21b, but the present invention is not limited to this, and, for example, in consideration of manufacturing cost and heat insulation, The coating layer 25 is appropriately formed by forming the coating layer 25 only on the pipe 21a side or by forming the coating layer 25 only on the outer peripheral surface of the first pipe 21a and the inner peripheral surface of the second pipe 21b. You may make it select a surface.

When it is desired to change the pressure of the pressure reducing layer 24 formed in the gap between the pipes 21a and 21b, or to change the gas component of the pressure reducing layer 24 in order to improve efficiency, as shown in FIG. It is advisable to install such a mechanism in the middle of piping. In FIG. 4, an exhaust pipe 26 is connected to the second pipe 21b arranged outside the first pipe 21a so as to communicate with the pressure reducing layer 24 formed in the gap between the pipes 21a and 21b. Further, a leak pipe 27 is provided in the middle of the exhaust pipe 26.
Are branched and connected. Here, the exhaust pipe 26 is connected to an exhaust system (not shown), and an exhaust valve 28 is provided on the way of the exhaust pipe 26. On the other hand, the leak pipe 27
Is connected to a leak hole (not shown), and a leak valve 29 is provided on the way of the leak hole.

In the above structure, first, when it is desired to change the pressure of the pressure reducing layer 24, the exhaust valve 28 is opened and the exhaust system (not shown) is operated. At this time, the pressure in the decompression layer 24 can be set to a desired value by appropriately adjusting the exhaust amount of the exhaust system. On the other hand, when it is desired to change the gas component of the decompression layer 24, the leak valve 29 is opened and new gas is introduced into the decompression layer 24 through a leak hole (not shown). Next, after closing the leak valve 29, the exhaust valve 28 is opened to operate the exhaust system, and the decompression layer 24 is depressurized to a predetermined pressure.

Further, as a system for maintaining the pressure of the decompression layer 24 with high accuracy, a configuration as shown in FIG. 5 can be considered. In FIG. 5, 30 is an exhaust system, 31 is a control system, 32 is a branch pipe connected to the cooling pipe 21 in a state of communicating with the decompression layer 24, 33 is an exhaust pipe connecting the branch pipe 32 to the exhaust system 31, and 34 Is an exhaust pipe that connects the decompression processing chamber 13 of the apparatus body 11 and the exhaust system 30. Further, 35 is a signal line for controlling the operation of the cooler 22, 36 is a signal line for controlling the operation of the exhaust system 30, and 37, 38, 39, 40 are solenoid valves 41 provided on the respective pipes. , 42, 43, 44 are signal lines for controlling the operation.

In the above configuration, when the exhaust system 30 is operated during the operation of the plasma processing system, the control system 31 operates the solenoid valves 41, 42, 43, 44 to cause the gas flow in the pipes 32, 33, 34. To control.
As a result, the pressure in the decompression processing chamber 13 of the apparatus body 11 is adjusted by the control system 31, and at the same time, the pressure in the decompression layer 24 of the cooling pipe 21 is also adjusted by the same control system 31. As a result, the pressure in the decompression layer 24 can be maintained with high precision as in the decompression processing chamber 13 of the apparatus body 11.

In the present embodiment, the plasma processing apparatus has been described as an example of the semiconductor manufacturing apparatus, but the cooling pipe structure of the present invention is not limited to this, and for example, a sputtering apparatus, a heat diffusion apparatus, and further It can be widely adopted in other manufacturing apparatuses such as a CVD apparatus.

[0024]

As described above, according to the present invention,
The decompression layer formed in the gap between the first pipe and the second pipe maintains the heat insulation state of the cooling pipe, and even if the decompression layer is very thin, the cooling pipe is Sufficient heat insulation is secured. Therefore, compared to the conventional device, it is possible to reduce the outer diameter of the entire pipe,
At the same time, the heat insulating property of the cooling pipe can be improved. Further, the heat insulation state of the cooling pipe arranged on the inner side of the apparatus main body is maintained similarly to the above, so that the heat loss of the cooling solvent on the inner side of the apparatus main body is significantly reduced as compared with the conventional case. As a result, it is possible to significantly improve the cooling efficiency of the entire device. Furthermore, by appropriately forming a coating layer on the inner peripheral surface or the outer peripheral surface of the first pipe and the second pipe, it becomes possible to further enhance the heat insulating property of the cooling pipe.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram showing an embodiment of the present invention.

FIG. 2 is a cross-sectional view of the entire pipe in the example.

FIG. 3 is an enlarged view of a main part showing another embodiment.

FIG. 4 is an explanatory view of a pressure adjusting means of a pressure reducing layer.

FIG. 5 is a configuration diagram of a pressure adjusting system for a pressure reducing layer.

FIG. 6 is a schematic configuration diagram showing an example of a conventional device.

FIG. 7 is a sectional view of the entire pipe in a conventional example.

[Explanation of symbols]

 10 plasma processing apparatus (semiconductor manufacturing apparatus) 11 apparatus main body 17 substrate 18 sample stage 21 cooling pipe 21a first pipe 21b second pipe 22 cooler 24 decompression layer 25 coating layer

Claims (2)

[Claims] 1. An apparatus main body in which a sample table on which a substrate is placed is arranged in a processing chamber, and an apparatus main body provided outside the apparatus main body.
A semiconductor manufacturing apparatus, comprising: a cooler that supplies a cooling solvent to the sample stage via a cooling pipe, and cooling the substrate placed on the sample stage by a cooling action of the cooling solvent supplied from the cooler, The cooling pipe comprises a first pipe for supplying the cooling solvent to the sample stage, and a second pipe in which the first pipe is arranged substantially concentrically inside the first pipe. A cooling pipe structure for a semiconductor manufacturing apparatus, wherein a pressure reducing layer is formed in a gap between the pipe and the second pipe. 2. A coating layer is formed on the outer peripheral surface or the inner peripheral surface of the first pipe and the second pipe with a material having a lower thermal conductivity than at least the material of the respective pipes. A cooling pipe structure for a semiconductor manufacturing apparatus according to claim 1.