JPH05315287A - Gas supplying device for fib assist deposition device - Google Patents

Abstract

PURPOSE:To realize a gas supplying device for FIB assist deposition devices which can control the amount of a gas blown upon a material through a nozzle. CONSTITUTION:Under the condition shown in the figure, one end 36 of an inner container 35 is inserted into an opening 38 and the gas supply to a nozzle 31 is stopped. When the container 35 is moved and the one end of the container 35 comes off from the opening 38, the gas supply to the nozzle 31 is started. When the container 35 is further moved rightward and the exhaust conductance of a valve formed of end faces 40 and 41 is controlled, the amount of the gas blown out from the nozzle 31 can be adjusted. In case the container 35 is further moved rightward in the figure, the other end face 40 of the container 35 comes into contact with the inner end face 41 of an outer container 30 and gas discharging operation from the container 35 is stopped. Therefore, the amount of the gas blown upon a specimen from the nozzle 31 becomes the maximum.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a focused ion beam (F
IB), and to a gas supply device of a FIB assisted deposition device in which metal atoms are deposited on a material along a specific pattern in a gas atmosphere.

[0002]

2. Description of the Related Art A technique called FIB assisted deposition is used to form a conductor pattern such as wiring of an integrated circuit,
It is used for depositing conductors in the holes formed after etching. This technique irradiates a material with gallium ions (Ga ⁺ ) or the like in an organometallic gas atmosphere to deposit metal atoms on the material. The gas source used for this is a solid material at room temperature. For example, tungsten hexacarbonyl (W (CO) ₆ ) is used.
FIG. 1 shows a schematic configuration of this FIB assisted deposition apparatus, and 1 is a focused ion beam (FIB) column. A gallium ion source 2 and focusing lenses 3 and 4 are provided in the column 1. Of course, although not shown, a deflector for deflecting the ion beam is also provided. Reference numeral 5 is a deposition chamber provided in the lower part of the FIB column 1, and a material 6 is placed in the deposition chamber 5. The inside of the deposition chamber 5 is exhausted by the exhaust pump 7.

8 is a metal which is solid at room temperature, for example W (CO)
₆ is a gas source container in which an organic metal 9 such as ₆ is contained, and the container 8 is heated by a heater 10 so that the organic metal can be evaporated or sublimated. The organometallic gas generated inside the container 8 is introduced into the deposition chamber 5 via the gas introduction pipe 11, and is blown toward the material 6 from the nozzle 12 provided at the tip of the gas introduction pipe 11. The introduction pipe 11 and the nozzle 12 are heated by the heater 13 so that the organometallic gas does not condense inside them. A valve 14 and a three-way valve 15 are provided in the middle of the gas introduction pipe 11, and an exhaust pipe 16 is connected to the three-way valve 15. The exhaust pipe 16 is connected to a turbo molecular pump 16 and a rotary pump 17. The operation of such a configuration will be described below.

First, the exhaust pump 7 exhausts the interior of the deposition chamber 5 to a predetermined pressure, and the valve 1
4 is opened, the gas source container 8 side of the three-way valve 15 is closed, the exhaust pipe 16 side is opened, and the residual gas in the gas introduction pipe 11 and the nozzle 12 is exhausted by the pumps 17 and 18. After the inside of the deposition chamber 5 reaches a predetermined vacuum degree, the heater 10 is turned on to heat and evaporate the organic metal in the container 8. At this time, the gas source container 8 side of the three-way valve 15 is opened, and the exhaust pipe 16
Close the side. As a result, the organic metal evaporated in the container 8 passes through the introduction pipe 11 and is blown from the nozzle 12 toward the material 6. By irradiating the material 6 with a focused ion beam (FIB) from the ion source 2 together with the injection of the organic metal onto the material 6, the organic metal is deposited on the material 6 along the pattern. Will be done.
The amount of the organometallic gas irradiated toward the material 6 is
It can be controlled by adjusting the conductance of the valve 14 or by adjusting the three-way valve so that a part of the gas from the container 8 flows toward the exhaust pipe 16. When the deposition of the metal of the predetermined pattern is completed, the heater is turned off, the gas source container 8 side of the three-way valve 15 is closed, the exhaust pipe 16 side is opened, and the residual gas in the gas introduction pipe 11 and the nozzle 12 is exhausted. To do.

FIG. 2 shows a main part of another example of supplying the organometallic gas to the material 6. In this example, the gas source container 20 is attached to the wall 21 of the deposition chamber 5. At the center of the gas source container 20, a pipe 23 which is a gas passage communicating with the nozzle 22 is arranged, and an end of the pipe 23 is adapted to engage with a tip of a shaft 24. An on / off valve is formed by 24. The shaft 24 is driven in the direction of the arrow in the figure by a shaft driving unit 25 outside the wall 21 of the deposition chamber 5. An organic metal 26 is enclosed inside the gas source container 20, and the gas source container 20 and the nozzle 22 are
It is heated by the heater 27.

With such a configuration, in the initial state,
A shaft 24 is pressed against the tube 23, and a heater 27 heats the container 20 and the nozzle 22. By this heating, the organic metal 26 is evaporated or sublimated. When the shaft driving unit 25 separates the shaft 24 from the end of the pipe 23, the organometallic gas evaporated and sublimated in the container 20 is guided from the pipe 23 to the nozzle 22, and is ejected toward the material 6 surface. It

[0007]

In the configuration shown in FIG. 2, the gas reaching the saturated vapor pressure in the gas source container 20 suddenly leaves the nozzle at the moment when the shaft 24 is separated from the end of the pipe 23 and the valve is opened. It blows out into the deposition chamber 5 and the pressure inside the deposition chamber 5 is increased momentarily. As a result, the exhaust pump 7 may be abnormal.
It may be considered that a leak valve or the like is provided in the gas passage in addition to the structure of FIG. 2, but if the seal portion of the leak valve is not sufficiently heated, the gas will condense at the seal portion and the role of the leak valve cannot be maintained. .. Further, the structure of FIG. 2 has a drawback that the pressure inside the container 20 cannot be monitored. Knowing the pressure within this container 20 is important for controlling the amount of metal deposited on the material 6.

The present invention has been made in view of the above circumstances, and an object thereof is to realize a gas supply device of a FIB assist deposition device capable of controlling the amount of gas blown from a nozzle onto a material. It is in.

[0009]

FI based on the first invention
The gas supply device of the B assist deposition device blows the organometallic gas from the nozzle toward the material, and
A gas supply device of an FIB assisted deposition device adapted to draw a predetermined pattern on a material by an ion beam, the first container being heatable and provided at one end of the first container and communicating with a nozzle. The first opening and the first
Second opening provided at the other end of the container and communicating with the exhaust system, a second container arranged in the first container and containing a gasified substance therein, and one of the first container A first valve structure formed by the inside of the end of the container and one end of the second container, and a second valve structure formed by the second opening of the first container and the other end of the second container, The second container is the first container in the first container.
Drive means for moving between the first opening and the second opening.

Further, the gas supply device of the FIB assisted deposition device based on the second invention blows the organometallic gas from the nozzle toward the material and draws a predetermined pattern on the material with an ion beam. A gas supply device of the FIB assist deposition device, wherein one end communicates with a nozzle and the other end is connected to an exhaust system, a gas source container, and gas from the gas source container is supplied into the cylinder. A high-conductance tube and a low-conductance tube, a piston moved in the cylinder, and a drive means for driving the piston, and the piston is in the cylinder at the first position of the piston. Supply of gas from the nozzle to the nozzle is stopped, and at the second position of the piston in the cylinder, from the tube of high conductance through the cylinder Gas is supplied to the nozzle from the low-conductance pipe through the cylinder while preventing the gas from being supplied to the nozzle, and at the third position of the piston, the low-conductance and high-conductance pipe is connected to the nozzle through the cylinder. It is characterized in that the gas is supplied.

[0011]

In the gas supply device of the FIB assisted deposition apparatus according to the first aspect of the present invention, the first container is moved by moving the second container in which the gasified substance is contained. The amount of gas blown from the nozzle is controlled according to the position of the second container inside.

Further, in the gas supply device of the FIB assist deposition device based on the second invention, a cylinder having one end communicating with the nozzle and the other end connected to the exhaust system,
A gas source container, a high-conductance pipe and a low-conductance pipe for supplying gas from the gas source container to the inside of the cylinder, a piston moved in the cylinder, and a driving means for driving the piston. The amount of gas blown from the nozzle is controlled according to the position of the piston in the cylinder.

[0013]

Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 3 shows a gas supply device part of the FIB assisted deposition device according to the present invention. The same parts as those of the conventional device of FIG. 1 are designated by the same reference numerals and detailed description thereof will be omitted. Reference numeral 30 in the drawing denotes an outer container attached to the wall 21 of the deposition chamber, and a nozzle 31 is provided at one end of the outer container 30. At the other end of the outer container 30,
An exhaust port 32 is provided, and the exhaust port 32 is connected to an exhaust pump (not shown) via a valve 33. Inside the outer container 30, an inner container 35 movable by a drive unit 34 is provided. Both ends of the inner container 35 are formed in a rod shape, and an O-ring seal 37 is attached to one end 36 of the inner container 35. The one end 36 is configured to be inserted into an end opening 38 of the outer container 30 connected to the nozzle 31. The one end 36 of the container 35 and the opening 38 form a first valve mechanism. The other end of the container 35 is connected to a drive unit 34 provided outside the wall 21, and the internal space of the container 35 contains an organic metal 39 which is a gasifying substance. The other end surface 40 of the inner container 35 and the inner end surface 41 of the outer container are in contact with each other to form a second valve mechanism. When the second valve mechanism is closed, the exhaust port 32 is closed and the outer side is closed. The exhaust operation inside the container 30 is stopped. A heater 42 is attached to each of the outer container 30 and the inner container 35 to heat each container.

With the above structure, the outer container 30 and the inner container 35 are heated by the heater 42, so that the organic metal 39 in the inner container 35 is evaporated or sublimated. When the organometallic gas is not flown from the nozzle 31 toward the sample 6,
As shown in FIG. 3, one end 36 of the inner container 35 has an opening 3
8 and the first valve mechanism is closed. At that time, the valve 33 is opened and the containers 30 and 3 are opened.
The gasified organic metal inside 5 is exhausted. When the gas inside the container 30 starts to flow from the nozzle 31 toward the sample 6, the driving unit 34 moves the inner container 35 to the right side in the drawing. FIG. 4 shows a state in which the inner container 35 is moved, one end of the container 35 is removed from the opening 38, and the first valve mechanism is opened. In the state of FIG. 4, the second valve mechanism formed by the end faces 40 and 41 is still open, and the insides of the containers 30 and 35 are exhausted through the exhaust port 32 and the valve 33, and the nozzle 31 The gas is prevented from suddenly ejecting toward the sample 6.
Further, by moving the inner container 35 to the right and controlling the exhaust conductance of the second valve formed by the end faces 40 and 41, the amount of gas blown from the nozzle 31 can be adjusted. The inner container 3 is further driven by the driving unit 34.
5 is moved to the right side in the figure, and in the state of FIG. 5, the end surface 40 at the other end of the inner container and the inner end surface 41 of the outer container 30 come into contact with each other, and the second valve mechanism is closed,
The evacuation operation inside the container will be stopped. This Figure 5
In this state, the gas pressure of the maximum saturated vapor pressure inside the containers 35 and 30 is obtained, and the amount of gas blown from the nozzle 31 toward the sample becomes maximum. Further, if the conductance of the nozzle 31 is properly designed, a constant gas flow rate can be set in the state of FIG. If a pressure gauge is provided on the exhaust passage connected to the exhaust port 32 in this embodiment, the pressure inside the container 30 can be monitored although it is secondary.

FIG. 6 shows another embodiment of the present invention.
Reference numeral 45 is a pipe connected to the nozzle, and the pipe 45 is connected to the cylinder 46. A piston 47 is provided inside the cylinder 46 so as to be movable by a shaft 48. An exhaust pipe 49 is connected to the upper right end of the cylinder 46, and the exhaust pipe 49 is connected to an exhaust pump (not shown). One end of an auxiliary pipe 50 is connected to the lower left side of the cylinder 46, and a main pipe 52, one end of which is connected to a gas source container 51, is connected to the lower central portion of the cylinder 46. The other end of the auxiliary pipe 50 is connected in the middle of the main pipe 52. The pipe 45 is branched on the way, and the branched pipe 53 is connected to a vacuum gauge 54 and is also connected to a deposition chamber via a valve 55. The area surrounded by the dotted line is a constant temperature block 56, and the inside of the block is heated to a certain temperature or higher.

7 to 11 are state diagrams of the piston 47 in the cylinder 46, and FIG. 7 shows the state in which the piston 47 is pressed against the left end portion of the cylinder 46 by the shaft 48. In the state of FIG. 7, the organic metal 57 in the gas source container 51 is heated and evaporated, and the evaporated organic metal enters the cylinder 46 from the main pipe 52 and is further exhausted via the exhaust pipe 49. Therefore, the organometallic gas does not flow into the pipe 45, and the organometallic gas is not supplied from the nozzle (not shown) to the sample. At this time, the inside of the pipe 45 is exhausted through the valve 54 by the exhaust system of the deposition chamber. Next, the valve 54 is closed and the shaft 48 is driven to the right as shown in FIG.
Is moved to the right, and the piston 47 is arranged in the cylinder 46 between the connecting portion of the auxiliary pipe 52 and the connecting portion of the main pipe 52. In the state of FIG. 8, most of the organometallic gas from the gas source container 51 is exhausted by the exhaust pipe 49 via the main pipe 52 and the cylinder 46, but a part of it is passed through the auxiliary pipe 50 and inside the cylinder 46. It enters the pipe 45 through and is guided to the nozzle. At this time, since the auxiliary pipe 50 has a small diameter and a low conductance, a small amount of organometallic gas is slowly introduced to the nozzle.

When the shaft 48 is moved and the piston 47 is moved further to the right to block a part of the piston 47 and the main pipe 52 as shown in FIG. 9, the exhaust speed of the gas evaporated from the gas source container 51 is weakened. The flow rate of gas through the auxiliary pipe 50 starts to increase, and as a result, the flow rate of gas blown from the nozzle to the sample also increases. Furthermore, the piston 47
Is moved to the right side, and as shown in FIG.
When the main pipe 62 is completely closed, the gas pressure in the gas source container 51 and the main pipe 52 increases, and the gas flow rate through the auxiliary pipe 50 becomes maximum. Further, when the piston 47 is moved to the right and moved to the right end of the cylinder 46 as shown in FIG. , Is guided to the nozzle through the cylinder 46 and the pipe 45. At this time, the maximum amount of gas of the organic metal can be sent to the nozzle. As described above, also in this embodiment, in the initial state of the gas supply to the sample, the gas is prevented from being suddenly blown out into the deposition chamber. Further, in this embodiment, since the gas supply device can be arranged outside the deposition chamber, maintenance of the gas source container and the like becomes easy. Furthermore, it is difficult to design the structure of the nozzle that can change the gas flow rate, and the structure is complicated, so maintenance is also a troublesome task. Since the (flow rate) resistance is provided in addition to the nozzle and is placed outside the vacuum, this change becomes easy when the flow rate setting is different. Since the total number of valves in the gas line is reduced, the size of the entire apparatus can be reduced, and the portion heated outside the vacuum can be reduced.

[0018]

As described above, in the gas supply device of the FIB assisted deposition device according to the first invention, the second container in which the gasified substance is contained is inside the first container. Is moved to control the amount of gas blown out from the nozzle according to the position of the second container in the first container, and in the gas supply device of the FIB assist deposition device according to the second invention, , A cylinder having one end communicating with the nozzle and the other end connected to the exhaust system,
A cylinder provided with a gas source container, a high-conductance tube and a low-conductance tube for supplying gas from the gas source container into the cylinder, a piston moved in the cylinder, and drive means for driving the piston, The amount of gas blown out from the nozzle is controlled according to the position of the piston inside. Therefore, it becomes possible to easily control the amount of gas blown from the nozzle to the material, and it is possible to prevent the gas from suddenly entering the deposition chamber in the initial stage of blowing gas to the sample.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic configuration of a conventional FIB assist deposition apparatus.

FIG. 2 is a diagram showing a main part of another conventional example for supplying gas to a sample.

FIG. 3 is a diagram showing a main part of an embodiment of the present invention.

FIG. 4 is a diagram showing a state where an inner container 35 is moved in the embodiment of FIG.

5 is a diagram showing a state in which the inner container 35 is moved in the embodiment of FIG.

FIG. 6 is a diagram showing a main part of another embodiment of the present invention.

7 is a state diagram of a piston in a cylinder in the embodiment of FIG.

8 is a state diagram of a piston in a cylinder in the embodiment of FIG.

9 is a state diagram of a piston in a cylinder in the embodiment of FIG.

10 is a state diagram of a piston in a cylinder in the embodiment of FIG.

11 is a state diagram of a piston in a cylinder in the embodiment of FIG.

[Explanation of symbols]

 30 Outer container 31 Nozzle 32 Exhaust port 33 Valve 34 Drive part 35 Inner container 39 Organic metal 45 Piping 46 Cylinder 47 Piston 49 Exhaust pipe 50 Auxiliary pipe 51 Gas source container 52 Main pipe 54 Vacuum gauge

Claims (2)

[Claims] 1. A gas supply device of an FIB assist deposition device, which is configured to blow an organometallic gas toward a material from a nozzle and draw a predetermined pattern on the material by an ion beam, which is heatable. A first container; a first opening provided at one end of the first container and communicating with the nozzle; and a second opening provided at the other end of the first container and communicating with the exhaust system; A second container which is disposed in the container and in which a gasified substance is placed, and a first valve structure which is configured by an inner side of one end of the first container and one end of the second container, A second valve structure constituted by the second opening of the first container and the other end of the second container; and the second container having the first opening and the second opening inside the first container. Gas supply of a FIB assist deposition apparatus having a driving means for moving between Feeder. 2. A gas supply device of an FIB assist deposition device, wherein an organometallic gas is blown from a nozzle toward a material and a predetermined pattern is drawn on the material by an ion beam, one end of which is the nozzle. A cylinder connected to the exhaust system at the other end, a gas source container, a high-conductance pipe and a low-conductance pipe for supplying gas from the gas source container into the cylinder, and A piston to be moved, and a drive means for driving the piston. At the first position of the piston in the cylinder, the piston stops the supply of gas from the cylinder to the nozzle, and the first piston of the piston in the cylinder is stopped. Two
The gas is supplied from the low-conductance pipe to the nozzle through the cylinder while preventing the gas from being supplied from the high-conductance pipe through the cylinder to the low-conductance pipe at the third position of the piston. And a gas supply device of a FIB assist deposition device configured to supply gas from a high-conductance tube to a nozzle via a cylinder.