JPH05295118A - Amphipathic polysilane derivative - Google Patents
Amphipathic polysilane derivativeInfo
- Publication number
- JPH05295118A JPH05295118A JP4097981A JP9798192A JPH05295118A JP H05295118 A JPH05295118 A JP H05295118A JP 4097981 A JP4097981 A JP 4097981A JP 9798192 A JP9798192 A JP 9798192A JP H05295118 A JPH05295118 A JP H05295118A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- polysilane
- derivative
- group
- polysilane derivative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000548 poly(silane) polymer Polymers 0.000 title claims abstract description 34
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 7
- 150000002891 organic anions Chemical class 0.000 claims abstract description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- -1 pyridine compound Chemical class 0.000 claims description 6
- 150000001449 anionic compounds Chemical group 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 2
- 125000005843 halogen group Chemical group 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 10
- 239000002904 solvent Substances 0.000 abstract description 4
- 239000012776 electronic material Substances 0.000 abstract description 3
- 150000003222 pyridines Chemical class 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- TZWNFYNYOUMRRE-UHFFFAOYSA-N 1-tert-butylpyridin-1-ium Chemical class CC(C)(C)[N+]1=CC=CC=C1 TZWNFYNYOUMRRE-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 150000002430 hydrocarbons Chemical group 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- XJUZRXYOEPSWMB-UHFFFAOYSA-N Chloromethyl methyl ether Chemical compound COCCl XJUZRXYOEPSWMB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229940061627 chloromethyl methyl ether Drugs 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000001450 anions Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N isopropyl alcohol Natural products CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 125000005647 linker group Chemical group 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- LAQCBOJJPYGEGT-UHFFFAOYSA-M 1-tert-butylpyridin-1-ium;chloride Chemical compound [Cl-].CC(C)(C)[N+]1=CC=CC=C1 LAQCBOJJPYGEGT-UHFFFAOYSA-M 0.000 description 1
- HZNVUJQVZSTENZ-UHFFFAOYSA-N 2,3-dichloro-5,6-dicyano-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(C#N)=C(C#N)C1=O HZNVUJQVZSTENZ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical group CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 1
- GNEPOXWQWFSSOU-UHFFFAOYSA-N dichloro-methyl-phenylsilane Chemical compound C[Si](Cl)(Cl)C1=CC=CC=C1 GNEPOXWQWFSSOU-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- AOJFQRQNPXYVLM-UHFFFAOYSA-N pyridin-1-ium;chloride Chemical compound [Cl-].C1=CC=[NH+]C=C1 AOJFQRQNPXYVLM-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical group 0.000 description 1
- 238000005956 quaternization reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Landscapes
- Silicon Polymers (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はポラシラン誘導体に関す
る。ポリシランはシリコン原子のみを主鎖とする成形可
能な高分子化合物である。シリコン−シリコン結合に関
与しているσ電子が、ポリマー中を比較的自由に動く
(σ共役)ため、ポリシランは導電性を有している。そ
のためポリシランは導電性材料、光半導体、フォトレジ
スト等としての応用が考えられている。FIELD OF THE INVENTION The present invention relates to a porasilane derivative. Polysilane is a moldable polymer compound having only silicon atoms as a main chain. Polysilane has conductivity because the σ electrons involved in the silicon-silicon bond move relatively freely in the polymer (σ conjugation). Therefore, application of polysilane as a conductive material, an optical semiconductor, a photoresist, etc. is considered.
【0002】[0002]
【従来の技術】この化合物に関しては、R.D Mil
ler,J.Michl(Chem.Review 8
9p.1359−1410(1989))に詳細に総説
されている。大多数のポリシランの側鎖は、脂肪族、芳
香族またはそれらの連結基であって、疎水性の炭化水素
基に限られ、第四級アンモニウム塩のようなカチオンを
導入した親水性基を有するものは知られていない。2. Description of the Related Art Regarding this compound, R. D Mil
Ler, J .; Michl (Chem. Review 8
9p. 1359-1410 (1989)). The side chains of most polysilanes are aliphatic, aromatic or their linking groups, and are limited to hydrophobic hydrocarbon groups and have cation-introduced hydrophilic groups such as quaternary ammonium salts. Things are unknown.
【0003】[0003]
【発明が解決しようとする課題】本発明は、第四級化に
より両親媒性を有するポリシラン誘導体を提供するもの
であり、更に詳細には、本発明は、式DISCLOSURE OF THE INVENTION The present invention provides a polysilane derivative having an amphipathic property by quaternization. More specifically, the present invention is represented by the formula:
【0004】[0004]
【化5】 [Chemical 5]
【0005】(式中R1 ,R2 は1価の炭化水素基、R
3 は2価の炭化水素基、Xは1価の無機又は有機陰イオ
ンを表わす。)にて表わされる繰返し単位を含み、ラン
グミュア・ブロジェット法により水面上に単分子膜を形
成することができる両親媒性ポリシラン誘導体を提供す
る。(Wherein R 1 and R 2 are monovalent hydrocarbon groups, R
3 represents a divalent hydrocarbon group, and X represents a monovalent inorganic or organic anion. And an amphipathic polysilane derivative containing a repeating unit represented by the formula (1) and capable of forming a monomolecular film on the water surface by the Langmuir-Blodgett method.
【0006】本発明のポリシラン誘導体の側鎖R1 及び
R3 にて表わされた炭化水素基は、周知のようにアルキ
ル基、アルキレン基、シクロアルキル基などの脂肪族炭
化水素基、フェニル基、ナフチル基のようなアリール基
またはそれらの連結基である。またR2 はアルキル基で
ある。これらの疎水性炭化水素基群と四級化ピリジニウ
ム塩の親水性基との共存調和により、本発明のポリシラ
ン誘導体は両親媒性を有するとともに、ラングミュア・
ブロジェット法により水面上に単分子膜を形成すること
ができる。The hydrocarbon group represented by the side chains R 1 and R 3 of the polysilane derivative of the present invention is, as is well known, an aliphatic hydrocarbon group such as an alkyl group, an alkylene group or a cycloalkyl group, or a phenyl group. , An aryl group such as a naphthyl group, or a linking group thereof. R 2 is an alkyl group. Due to the coexistence and harmony of these hydrophobic hydrocarbon group groups and the hydrophilic groups of the quaternized pyridinium salt, the polysilane derivative of the present invention has amphipathic properties and is
A monomolecular film can be formed on the water surface by the blow jet method.
【0007】XはSO4 2-,F- ,CrO4 2-,Cr2
O7 2-,PO4 3-,CO3 2-,ClO4 - ,CN- ,C
l- ,Br- ,I- ,[Fe(CN)6 ]4-,[ Fe
(CN)6 ]3-,CH3 COO- ,NO3 - ,B
F4 - ,PF6 - 及びOH- などにより、選ばれた陰イ
オンである。X is SO 4 2− , F − , CrO 4 2− , Cr 2
O 7 2-, PO 4 3-, CO 3 2-, ClO 4 -, CN -, C
l -, Br -, I - , [Fe (CN) 6] 4-, [Fe
(CN) 6] 3-, CH 3 COO -, NO 3 -, B
It is an anion selected from F 4 − , PF 6 −, OH − and the like.
【0008】また本発明のポリシラン誘導体は、式の
繰返単位のみによって実質的に構成されていてもよく、
他のシラン構成単位との共重合体であってもよい。Further, the polysilane derivative of the present invention may be constituted substantially only by the repeating unit of the formula,
It may be a copolymer with another silane constituent unit.
【0009】両親媒性を有するので、本ポリシラン誘導
体は、ラングミュア・ブロジェット法により水面上に容
易に単分子膜を形成することができ、又、ピリジニウム
塩とすることにより融点を十分高くすることができるた
め熱処理工程を必要とするデバイスの作成に有利である
と共に、有機溶媒に対する溶解性が改良されているた
め、デバイスの有機溶媒による洗浄を可能とする。また
導電性を失うことがないので単分子膜の積層、その他の
成形層として各種電子材料、膜などに応用した際優れた
特性を示すことが予想される。Since it has an amphipathic property, the present polysilane derivative can easily form a monomolecular film on the water surface by the Langmuir-Blodgett method, and the pyridinium salt can sufficiently increase the melting point. Therefore, it is advantageous for producing a device requiring a heat treatment step, and since the solubility in an organic solvent is improved, the device can be washed with an organic solvent. Further, since it does not lose its conductivity, it is expected to exhibit excellent properties when applied to various electronic materials, films, etc. as a laminated layer of monomolecular films and other molding layers.
【0010】本発明において、カチオンをピリジニウム
イオンが選ばれるが、これはアルキルアンモニウムイオ
ンの場合によってもポリシラン四級化塩の融点を高め、
実用に適するからである。又、陰イオンの種類は融点お
よび単分子膜の形成能に関係するので適切に選択され
る。In the present invention, a pyridinium ion is selected as the cation, which raises the melting point of the polysilane quaternized salt even when it is an alkylammonium ion.
This is because it is suitable for practical use. Further, the type of anion is appropriately selected because it relates to the melting point and the ability to form a monomolecular film.
【0011】本発明のポリシラン誘導体の製造は、ポリ
シランの分子内にピリジン基を導入し四級化することに
より行う。この方法は、フェニル基を有するポリシラン
をクロロメチルメチルエーテルと反応させると相当する
クロロメチルフェニル基含有ポリシランが、生成する
(Ban et al.,Macromolecule
s20,p.1775−1778(1987))ことを
利用し、このものとピリジンとを反応させて分子内ピリ
ジニウム塩酸塩を製造し、要すれば他の陰イオン塩に変
換することにより達成される。使用クロロメチルメチル
エーテルは他のハロゲノアルキル、アルキルエーテルに
変更できる。この方法によれば生成ポリシラン誘導体の
分子量は原料ポリシランの分子量に相当する。The polysilane derivative of the present invention is produced by introducing a pyridine group into the molecule of polysilane and quaternizing. In this method, when a polysilane having a phenyl group is reacted with chloromethyl methyl ether, a corresponding chloromethylphenyl group-containing polysilane is produced (Ban et al., Macromolecule).
s20, p. 1777-1778 (1987)), and reacting this with pyridine to produce an intramolecular pyridinium hydrochloride, and if necessary, converting it to another anion salt. The chloromethyl methyl ether used can be changed to other halogenoalkyl or alkyl ether. According to this method, the molecular weight of the produced polysilane derivative corresponds to the molecular weight of the raw material polysilane.
【0012】例えばFor example,
【0013】[0013]
【化6】 [Chemical 6]
【0014】(式中R2はプロピル基又はブチル基を表
し、mは重合度を表す。)かくして本発明において最も
好ましい式のポリシラン誘導体を得る。(In the formula, R2 represents a propyl group or a butyl group, and m represents a degree of polymerization.) Thus, the polysilane derivative of the most preferable formula in the present invention is obtained.
【0015】本発明の式の繰返単位を含有する共重合
ポリシラン誘導体はフェニル基を側鎖に有するシランと
他のシランとの共重合体を同様に反応させることにより
得られ、他のシランは好ましくは側鎖にアルキル基及び
/又はシクロアルキル基を有するものが選ばれる。The copolymerized polysilane derivative containing the repeating unit of the formula of the present invention can be obtained by reacting a copolymer of a silane having a phenyl group in the side chain with another silane in the same manner. Those having an alkyl group and / or a cycloalkyl group in the side chain are preferably selected.
【0016】ラングミュア・ブロジェット(LB)法で
得られる単分子膜積層膜の形の本発明のポリシラン誘導
体は、液晶素子の液晶分子の初期状態での配向を改良す
るための配向膜に好適である。膜は導電性であるので、
強誘電性液晶を用いても、液晶分子の自発分極を妨げる
分亟電荷は発生しにくく、液晶分子の応答速度や双安定
性の優れた液晶素子を提供する。また膜の耐熱性、耐溶
媒性は改良されているので、加工上有利であると共に配
向性をもつ単分子膜であるのでラビングの必要もない。The polysilane derivative of the present invention in the form of a monolayer laminated film obtained by the Langmuir-Blodgett (LB) method is suitable as an alignment film for improving the alignment of liquid crystal molecules in a liquid crystal element in the initial state. is there. Since the membrane is conductive,
Provided is a liquid crystal device which is excellent in response speed and bistability of liquid crystal molecules, because even if a ferroelectric liquid crystal is used, it is difficult to generate a partial charge that prevents spontaneous polarization of the liquid crystal molecules. Further, since the heat resistance and solvent resistance of the film are improved, the rubbing is not necessary because it is a monomolecular film which is advantageous in processing and has orientation.
【0017】[0017]
(参考例1) ポリフェニルメチルシランの合成 P.Trefonas III(J.Poly,Sc
i.,PolymerLetters.Ed.21,p
819−822(1983))記載の方法に準じ、ナト
リウムを含むフェニルメチルジクロロシランのトルエン
溶液を還流することによって得られる。この反応式を次
の化学式に示す。Reference Example 1 Synthesis of Polyphenylmethylsilane P. Trefonas III (J. Poly, Sc
i. , Polymer Letters. Ed. 21, p
819-822 (1983)) and is obtained by refluxing a toluene solution of phenylmethyldichlorosilane containing sodium. This reaction formula is shown in the following chemical formula.
【0018】[0018]
【化7】 [Chemical 7]
【0019】この収率は13.1%で融点210℃〜2
20℃の目的物を得た。The yield is 13.1% and the melting point is 210 ° C.-2.
The desired product at 20 ° C was obtained.
【0020】(参考例2) ポリクロロメチルフェニル
メチルシランの合成 次に、得られたポリフェニルメチルシランよりポリクロ
ロメチルフェニルメチルシランを合成した。この合成法
については、H.Banらによって“Macromol
ecules,20,p.1775〜1778(198
7)”に報告されており、ポリフェニルメチルシランの
クロロメチルメチルエーテル及びクロロホルム溶液に四
塩化スズを滴下して、5℃、15時間撹拌した後にメタ
ノール中に再沈澱させることで得ることができる。この
反応は次の化学式のようになる。Reference Example 2 Synthesis of Polychloromethylphenylmethylsilane Next, polychloromethylphenylmethylsilane was synthesized from the obtained polyphenylmethylsilane. For this synthetic method, see H. Ban et al., “Macromol
ecules, 20, p. 1775-1778 (198
7) ”, and tin tetrachloride may be added dropwise to a solution of polyphenylmethylsilane in chloromethyl methyl ether and chloroform, the mixture may be stirred at 5 ° C. for 15 hours and then reprecipitated in methanol to obtain the compound. This reaction becomes like the following chemical formula.
【0021】[0021]
【化8】 [Chemical 8]
【0022】この収率は44.5%で、融点90℃〜1
00℃の目的物を得た。The yield is 44.5% and the melting point is 90 ° C. to 1
The target substance at 00 ° C was obtained.
【0023】(実施例1) ポリフェニルメチルシラン
のtert−ブチルピリジニウム塩の合成 次に上述のポリクロロメチルフェニルメチルシランの
0.6g(3.7×10-3mol)をDMF(ジメチル
ホルムアミド)5.2mlに溶かし、さらに室温でte
rt−ブチルピリジン5.2ml(3.5×10-2mo
l)を滴下して20時間撹拌した。その後エバポレータ
及び真空加熱(70℃)によりDMF、及び未反応のt
ert−ブチルピリジンを留去し、化学式9に示すポリ
フェニルメチルシランのtert−ブチルピリジニウム
塩酸塩を収率98.0%で得ることができた。Example 1 Synthesis of tert-butylpyridinium salt of polyphenylmethylsilane Next, 0.6 g (3.7 × 10 −3 mol) of the above polychloromethylphenylmethylsilane was added to DMF (dimethylformamide). Dissolve in 5.2 ml, and then te at room temperature.
5.2 ml of rt-butylpyridine (3.5 × 10 -2 mo
1) was added dropwise and stirred for 20 hours. After that, DMF and unreacted t were added by an evaporator and vacuum heating (70 ° C.).
By removing ert-butylpyridine by distillation, tert-butylpyridinium hydrochloride of polyphenylmethylsilane represented by Chemical Formula 9 could be obtained with a yield of 98.0%.
【0024】[0024]
【化9】 [Chemical 9]
【0025】図1は、上述のtert−ブチルピリジニ
ウム塩のd−ジメチルスルホシキド中のNMRスペクト
ルである。tert−ブチルピリジニウム塩は、はっき
りした融点を示さず、300℃程度で分解した。ter
t−ブチルピリジニウム塩中の塩化物イオンをヘキサフ
ルオロリン酸イオンに置換したものは融点が140℃で
あり、耐溶媒性については、ヘキサン、ベンゼン、イソ
プロピルアルコール、エタノール、メタノール、水等に
はほとんど溶けない性質を有する。分子量は5,000
から1,000,000の間に分布しており、高分子量
及び低分子量の2つのピークを持つ。平均分子量は高分
子量側で約200、000、低分子量側で約6000で
ある。耐熱性・耐薬品性に優れていると共に、導電性に
も優れた配向膜となる。FIG. 1 is an NMR spectrum of the above-mentioned tert-butylpyridinium salt in d-dimethyl sulfoxide. The tert-butylpyridinium salt did not show a clear melting point and decomposed at about 300 ° C. ter
A compound obtained by substituting a chloride ion in a t-butylpyridinium salt with a hexafluorophosphate ion has a melting point of 140 ° C., and has almost no solvent resistance in hexane, benzene, isopropyl alcohol, ethanol, methanol, water, etc. It has the property of not melting. Molecular weight is 5,000
It is distributed between 1 and 1,000,000, and has two peaks of high molecular weight and low molecular weight. The average molecular weight is about 200,000 on the high molecular weight side and about 6000 on the low molecular weight side. The alignment film has excellent heat resistance and chemical resistance as well as excellent conductivity.
【0026】(実施例2) 単分子膜の作成 次に、上述の合成方法によって得られたtert−ブチ
ルピリジニウム塩の単分子膜の形成方法について説明す
る。まず、tert−ブチルピリジニウム塩化物10-3
Mのクロロホルム溶液0.1mlを、ヘキサフルオロリ
ン酸カリウム(KPF6 )6×10-4M、20℃の下層
水上に展開し、たえず2次元圧力をかけて、単分子膜と
する。図2は、その際の表面圧−分子単位占有面積曲線
を示したものである。図示されているように、崩壊圧5
0mN/m程度の単分子膜を形成することがわかる。こ
の単分子膜が形成されている下層水中に、下層水表面に
垂直にガラス基板を浸漬し、上下動させることによって
tert−ブチルピリジニウム塩の単分子膜をガラス基
板表面に移しとる。この方法で、積層膜を得ることがで
きた。Example 2 Preparation of Monomolecular Film Next, a method for forming a monomolecular film of a tert-butylpyridinium salt obtained by the above-described synthesis method will be described. First, tert-butylpyridinium chloride 10 −3
0.1 ml of a chloroform solution of M is developed on the lower layer water of potassium hexafluorophosphate (KPF 6 ) 6 × 10 −4 M at 20 ° C., and two-dimensional pressure is constantly applied to form a monomolecular film. FIG. 2 shows a surface pressure-molecule unit occupied area curve in that case. As shown, collapse pressure 5
It can be seen that a monomolecular film of about 0 mN / m is formed. The glass substrate is immersed in the lower layer water in which this monomolecular film is formed, perpendicularly to the surface of the lower layer water, and moved up and down to transfer the monomolecular film of tert-butylpyridinium salt to the glass substrate surface. By this method, a laminated film could be obtained.
【0027】[0027]
【発明の効果】本発明により、側鎖にピリジニウムカチ
オンを含有する両親媒性ポリシラン誘導体が新しく提供
され、この誘導体は導電性も良好であり、耐溶媒、耐熱
性が改良された電子材料特にラングミュア・プロジェッ
ト法による超薄膜としての応用が期待される。INDUSTRIAL APPLICABILITY According to the present invention, an amphipathic polysilane derivative containing a pyridinium cation in its side chain is newly provided. This derivative has good conductivity, and has improved solvent resistance and heat resistance. -Application as an ultra-thin film by the projet method is expected.
【図面の簡単な説明】[Brief description of drawings]
【図1】実施例で得られた本発明の両親媒性ポリシラン
誘導体のNMRスペクトルを示す図である。FIG. 1 is a diagram showing an NMR spectrum of an amphipathic polysilane derivative of the present invention obtained in an example.
【図2】実施例で得られた本発明の両親媒性ポリシラン
誘導体の単分子膜の表面圧−面積曲線を示す図である。FIG. 2 is a diagram showing a surface pressure-area curve of a monomolecular film of the amphiphilic polysilane derivative of the present invention obtained in an example.
Claims (6)
炭化水素基、Xは無機又有機陰イオンを表す。またXは
1価である必要はなく2、3、…n価でもよい。そのと
きのピリジニウム基とXとのモル比は、n:1になる。
又、Xは1種類のイオンのみである必要はなくX,Y,
Z…等の多種のイオンを混合したものでもよい。)にて
表わされる繰返し単位を含み、ラングミュアブロジェッ
ト法により水面上に単分子膜を形成することができる両
親媒性ポリシラン誘導体。1. The formula: (In the formula, R 1 and R 2 are monovalent hydrocarbon groups, R 3 is a divalent hydrocarbon group, X is an inorganic or organic anion, and X is not necessarily monovalent; The valence may be n. The molar ratio of the pyridinium group and X at that time is n: 1.
Also, X does not have to be only one type of ion, X, Y,
It may be a mixture of various ions such as Z. ) An amphipathic polysilane derivative containing a repeating unit represented by the formula (1) and capable of forming a monomolecular film on the water surface by the Langmuir-Blodgett method.
的になる請求項1記載のポリシラン誘導体。2. The polysilane derivative according to claim 1, which consists essentially of the repeating unit represented by the formula.
基を表す)にて表される請求項1又は2の何れかに記載
のポリシラン誘導体。3. The repeating unit of the formula has the formula: The polysilane derivative according to claim 1 or 2, wherein X represents an inorganic or organic anion and R 2 represents an alkyl group.
請求項3記載のポリシラン誘導体。4. The polysilane derivative according to claim 3, wherein the alkyl group is a tert-butyl group.
に記載のポリシラン誘導体。5. The polysilane derivative according to claim 1, which is in the form of a monomolecular film.
返し単位を含むポリシランと式 【化4】 (式中R2 はアルキル基を示す)にて表わされるピリジ
ン化合物とを反応させることを特徴とする請求項1記載
のポリシラン誘導体の製造方法。6. The formula: A polysilane containing a repeating unit represented by the formula (W represents a halogen atom) The method for producing a polysilane derivative according to claim 1, wherein a pyridine compound represented by the formula (wherein R 2 represents an alkyl group) is reacted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4097981A JPH05295118A (en) | 1992-04-17 | 1992-04-17 | Amphipathic polysilane derivative |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4097981A JPH05295118A (en) | 1992-04-17 | 1992-04-17 | Amphipathic polysilane derivative |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05295118A true JPH05295118A (en) | 1993-11-09 |
Family
ID=14206848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4097981A Pending JPH05295118A (en) | 1992-04-17 | 1992-04-17 | Amphipathic polysilane derivative |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05295118A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015179158A (en) * | 2014-03-19 | 2015-10-08 | Jsr株式会社 | Liquid crystal alignment agent, liquid crystal orientation membrane, and liquid crystal display element |
-
1992
- 1992-04-17 JP JP4097981A patent/JPH05295118A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015179158A (en) * | 2014-03-19 | 2015-10-08 | Jsr株式会社 | Liquid crystal alignment agent, liquid crystal orientation membrane, and liquid crystal display element |
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