JPH05289805A - Coordinate input device - Google Patents

Abstract

PURPOSE:To reduce the number of external connection lines by mounting plural switching elements, which control the switching of the applied voltage of a resistance film, on an insulating substrate and unifying connection lines to connect them to an external circuit. CONSTITUTION:A resistance film 2 made of transparent conductive materials is formed on a glass substrate l, and plural dotlike electrodes Xa-1 to Xa-5, Xb-1 to Xb-5, Ya-1 to Ya-5, and Yb-1 to Yb-5 are formed on the resistance film 2. Field effect transistors Qxa-1 to Qxa-5, Qxb-1 to Qxb-5, Qya-1 to Qya-5, and Qyb-1 to Qyb-5 are mounted on the glass substrate 1. Field effect transistors Qxa-1 to Qxa-5, Qxb-1 to Qxb-5, Qya-1 to Qya-5, and Qyb-1 to Qyb-5 as switching elements are correspondingly connected to respective dotlike electrodes Xa-1 to Xa-5, Xb-1 to Xb-5, Ya-1 to Ya-5, and Yb-1 to Yb-5. Thus, wirings are collected on the first substrate 1 to reduce the number of wirings to the outside.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coordinate input device, and more particularly to a coordinate input device for detecting coordinate information of a pressure contact position of a pressure body such as a pen.

In recent years, handwriting input devices have been developed as input devices such as computer devices.

As an input device of this type, a coordinate input device is used which detects the coordinates of a pressing position on the input plate by pressing the input plate with a pressing body such as a pen.

In such a coordinate input device, it is required that the pressing position can be accurately detected.

[0005]

2. Description of the Related Art Conventional coordinate input devices of this type have been disclosed in JP-A-56-11582 and JP-A-58-35679.
There was a structure as shown in Japanese Patent Publication No.

In the coordinate input device disclosed in Japanese Patent Laid-Open No. 56-11582, a plurality of point electrodes are provided on a resistance film, and X of the point electrodes are provided.
The voltage applied in the axial direction and the Y-axis direction is switching-controlled by a switching element using a diode, and the conductive film provided facing the resistive film is pressed by a pressurizing body such as a pen, thereby applying a pressing position. Was detected by the X-axis and the Y-axis, respectively, and the pressing position was recognized.

In Japanese Patent Laid-Open No. 58-35679, an analog switch is used as a switching element.

Incidentally, in these coordinate input devices, the switching element is provided on a substrate different from the substrate on which the resistance film is formed.

[0009]

In the conventional coordinate input device of this type, however, a plurality of point electrodes are connected to the resistance film,
By applying a voltage via a plurality of switching elements corresponding to the respective point electrodes, a uniform potential distribution is provided on the X axis and the Y axis, and the plurality of switching elements have resistive films. Since it was provided on a substrate different from the substrate on which it was formed, there was a problem in that the substrate provided with the resistance film required a number of lead lines corresponding to a plurality of point electrodes.

The insulating film formed so as to be electrically connected only when pressure is applied separates pressure applied by the palm and pressure applied by the dedicated input pen, and electrical connection can be made only when pressure is applied by the dedicated input pen. In order to configure such a structure, the pen tip must have a fine dimension, ON / OFF must be repeated in an extremely short time, and contact between the resistance film and the conductive film must be detected in the shortest possible period. There was a problem that the contact position could not be detected.

The present invention has been made in view of the above points, and an object of the present invention is to provide a coordinate input device capable of surely detecting coordinates with a simple structure.

[0012]

According to a first aspect of the present invention, there is provided a first substrate on which a resistance film having a plurality of point electrodes arranged on four sides is formed, and a conductive film formed so as to face the resistance film. Then, by applying a switching control to the switching element provided on each of the plurality of electrodes, the second substrate is formed so that the pressed portion of the conductive film contacts the resistance film when applying pressure, A voltage is applied between the point electrodes on two sides facing each other so as to be time-divided in two axial directions orthogonal to each other, and the potential of the conductive film at the pressure portion is detected to detect the pressure portion. Is a coordinate input device for detecting the coordinate position of, and the switching element is mounted on the first substrate together with common wiring.

According to a second aspect of the present invention, a contact detection means for detecting contact between the conductive film and the resistance film, and a voltage applied to the point electrode when the contact means detects the contact between the conductive film and the resistance film. And a measuring means for measuring the pressing position.

According to a third aspect of the present invention, after the measuring means measures the position of the pressing portion in the uniaxial direction, the contact between the conductive film and the resistive film is detected again by the detecting means, and the conductive film and the resistance are detected. When the membrane is in contact, the axial position of the other of the pressure portions is measured.

According to a fourth aspect of the present invention, in the measuring means, when the contact detecting means detects non-contact between the conductive film and the resistance film, after a predetermined time elapses, the conductive film and the resistance again. It is configured to detect contact with the film.

According to a fifth aspect of the present invention, the measuring means detects the voltage drop of the switching element in advance and corrects the potential of the pressing position detected by the conductive film based on the voltage drop.

[0017]

According to the present invention, since the switching element is mounted on the first substrate on which the resistance film is formed together with the common wiring, the wiring can be gathered on the first substrate. The number of wirings to the outside can be reduced.

According to the second aspect, since the measurement of the pressurization position is started when the conductive film and the resistance film come into contact with each other, it is not necessary to always apply the voltage to the resistance film. , The current consumption can be reduced.

According to the third aspect, after the position measurement in the uniaxial direction,
Since the configuration is such that the contact between the conductive film and the resistance film is detected again before measuring the position in another axial direction, the measurement is performed even if the conductive film is pressed by mistake and the conductive film and the resistance film make contact. It is stopped and you can prevent erroneous input.

According to the fourth aspect, even if the conductive film and the resistance film are in a non-contact state after they are in contact with each other, the contact between the conductive film and the resistance film is detected again after a lapse of a certain time. Erroneous detection can be prevented even when the pressure applied to the membrane is unstable.

According to the present invention, the voltage drop due to the switching element is detected in advance, and the pressurizing position is calculated based on this voltage drop. Therefore, the position can be detected only by the voltage applied to the resistance film. Therefore, the position can be accurately detected.

[0022]

1 is a schematic block diagram of a first embodiment of the present invention. In the figure, 1 indicates a glass substrate.

ITO (Indium-Tin-O) is formed on the glass substrate 1.
A resistance film 2 made of a transparent conductive material such as xide) is formed. The resistive film 2 has a plurality of point electrodes X _{a-1 to} X _a-5 , X _b-1 on opposite sides on the Z axis (X axis, Y axis) orthogonal to each other.
To _Xb-5 , Ya _{-1 to} Ya _-5 , Yb _{-1 to} Yb _-5 are formed.

Multiple electrodes X_a-1~ X_a-5, X_b-1~ X
_b-5, Y_a-1~ Y_a-5, Y_b-1~ Y_{b- Five}Corresponding to each
Field-effect transistor Q that becomes a switching element
_Xa-1~ Q _Xa-5, Q_Xb-1~ Q_Xb-5, Q_Ya-1~ Q_Ya-5, Q
_Yb-1~ Q_Yb-5Are connected.

Field effect transistor Q_Xa-1~ Q_Xa-5, Q
_Xb-1~ Q_Xb-5, Q_Ya-1~ Q_Ya-5, Q _Yb-1~ Q_Yb-5Is resistance
It is mounted on the glass substrate 1 on which the film 2 is formed.

FIG. 2 is a plan view of the main part of the present invention, and FIG. 3 is a sectional view of the main part of the present invention. A method of manufacturing the input plate will be described with reference to FIGS.

First, the resistance film 2 is formed on the glass substrate 1.
It Next, etch the location where the resistance film drive switch is mounted.
To go. Next, make sure that the two electrodes make contact only when pressure is applied.
In order to do this, the spacer 6 is formed by screen printing,
Photosensitive resin material is molded by photolithography
Method, or dispersing fine spacers
By. Next, earth electrode 3, gate control electrode 4, point
Electrode X_a-1~ X_a-5, X_b-1~ X_b-5, Y_a-1~ Y
_a-5, Y_b-1~ Y_b-5Conductive paint such as Ag paste
Print and FETQ_Xa-1~ Q_Xa-5, Q_Xb-1~ Q_Xb-5, Q
_Ya-1~ Q_Ya-5, Q_{Yb -1}~ Q_Yb-5After carrying out heat treatment
Fix it firmly. FETQ per side_Xa, Q _Xb, Q_Ya，
Q_YbThe number of mounted devices depends on the required effective input area. electrode
The larger the number, the more the ratio of effective input area to the total area.
growing.

FIG. 4 is a characteristic diagram of the input region of the number of electrodes on one side and the distortion of the electric field. For example, it can be seen that when the number of electrodes on one side is 9, the electric field distortion is 0.2% at about 90% per axis.

The counter substrate A is formed by vapor-depositing a transparent conductive material conductive film 8 such as ITO on the PET sheet 7, and the extraction electrode is formed by printing Ag paste or the like. The two substrates A and B are bonded to each other with an adhesive 9 with their ITO vapor deposition surfaces facing each other.

Returning to FIG. 1, the electrical connection will be described. The sources of the field effect transistors Q _{Xa-1 to} Q _Xa-5 are connected to the power supply line 3b, the drains are connected to the resistance film 2, and the gates are connected to the gate line 4 _-1 .

The field effect transistors Q _{Xb-1 to} Q _Xb-5 have sources connected to the ground line 3q, drains connected to the resistive film 2, and gates connected to the gate line _4-2 .

The source of each of the field effect transistors Q _{Ya-1 to} Q _Ya-5 is connected to the power supply line 3b, the drain is connected to the resistance film 2, and the gate is connected to the gate line 4 _-3 .

The field effect transistors Q _{Yb-1 to} Q _Yb-5 have sources connected to the ground line 3a, drains connected to the resistive film 2, and gates connected to the gate line 4 _-4 .

The gate lines 4 _-1 to _{4 -4} are connected to a microprocessor unit (MPU) 10 serving as a control circuit.

The MPU 10 supplies signals to the gate lines 4 _-1 to _{4 -4} such that the gate lines 4 _-1 , 4 _-2 and the gate lines 4 _-3 , 4 _-4 are alternately high and low, FETQ
_{Xa-1 to} Q _Xa-5 , Q _{Xb-1 to} Q _Xb-5 and FET Q _Ya-1 to
Control is performed so that Q _Ya-5 and Q _{Yb-1 to} Q _Yb-5 are alternately turned on and off.

Further, the conductive film 8 is a correction switch circuit 12
Also, it is connected to the MPU 10 via the analog / digital (A / D) converter 11 and directly connected to the interrupt input terminal T ₁ of the MPU ₁₀ . The power supply voltage V _CC is applied to the conductive film 8 via the switch SW ₁ and the resistor R ₁ .

The switch SW ₁ has a control terminal connected to the MPU 10 and is turned on / off by a control signal from the MPU 10.

FIG. 5 is a schematic block diagram of the essential parts of the first embodiment of the present invention.

The correction switch circuit 12 is composed of five switches SW _{2 to} SW ₆ . The switch SW ₂ turns on / off the connection between the conductive film 8 and the A / D converter 11. The switch SW ₃ turns on / off the connection between the point electrode Y _a-5 and the A / D converter 11. Switch SW
Reference numeral ₄ turns on / off the connection between the point electrode X _a-1 and the A / D converter 11. The switch SW ₅ turns on / off the connection between the dot electrode Y _b-1 and the A / D converter 11. The switch SW ₆ is a point electrode X _b-5 and the A / D converter 11
Turn on / off the connection with.

The switches SW _{2 to} SW ₆ are switching-controlled by the MPU 10 when obtaining the correction data, and the conductive film 8
And point electrodes X _a-1 , X _b-5 , Y _a-5 , Y _b-1 and A / D
The connection with the converter 11 is controlled.

When obtaining the correction data, first, the switch S
Turn off W ₂ .

Further, the switches SW ₃ , SW ₅ and SW ₆ are turned off and only the switch SW ₄ is turned on to supply the potential V _XH of the point electrode X _a-1 to the A / D converter 11,
/ D converted and supplied to the MPU 10. The potential V _XH is the FET
The maximum value in the X-axis direction is indicated by the voltage after subtracting the voltage drop force by Q _Xa-1 .

Next, the switches SW _{3 to} SW ₅ are turned off and only the switch SW ₆ is turned on. As a result, the dot electrode _Xb-5 and the A / D converter 11 are connected.

The MPU 10 detects the potential V _XL of the point electrode X _b-5 . V _XL indicates the minimum value in the X-axis direction.

The MPU 10 obtains the value of the contact position P _X from V _XH and V _XL according to the following equation.

P _X = L _X × {(V _X −V _XL ) / (V _XH −V _XL )} (1) where L _X is the length of the resistive film 2 in the X-axis direction and V _X is the contact position. Shows the potential at.

Similarly, the maximum potential V _YH and the minimum potential V _YL are obtained in the Y-axis direction, and the value of the contact position P _X is obtained from the following equation.

P _Y = L _Y × {(V _Y −V _YL ) / (V _YH −V _YL )} (2) where L _Y is the length of the resistive film 2 in the Y-axis direction and V _Y is the contact position. Shows the potential at.

6 and 7 are diagrams for explaining the operation of the first embodiment of the present invention.

The operation of the first embodiment will be described with reference to FIGS.

First, when the power is turned on, the MPU 10 will
TQ _{Xb-1 to} Q _Xb-5 are turned on and the switch SW ₁ is turned on to enter a sleep mode with low current consumption (steps S1-1, S1-2, S1-3).

At this time, the total current consumption is as low as several μA.

With the input pen in the sleep mode,
When an arbitrary coordinate is pressed, the resistance film 2 and the conductive film 8 come into contact with each other, and the interrupt input terminal of the MPU 10 becomes low level (L).

When the interrupt input terminal becomes low level, MP
U10 returns from the sleep mode to the normal mode and performs interrupt processing.

First, the MPU 10 waits for a fixed time (10 msec) after entering the interrupt processing, and again detects the level of the interrupt input terminal (steps S2-1, S2-2, S2--).
3).

At this time, if the detection level is high, the MPU 10 judges that the pressurization for coordinate input is not made and enters the sleep mode again (step S2-4).

If the detection level is low, M
The PU 10 judges that the pressure is applied for inputting the coordinates, and turns off the switch SW ₁ , and the contact point (P _X , P _Y ) of the input pen.
Of the potential of the FET Q _{Xa- 1 to} Q _Xa-5 and the FET Q _Xb-1 to
Turn on Q _Xb-5 , FET Q _{Ya- 1 to} Q _Ya-5 , FET Q _{Yb -1}
˜Q _Yb-5 is turned off, and the voltage in the X-axis direction is detected (contact point P _X is obtained) (step S2-5).

Next, the voltage of the same contact point P _X is detected a plurality of times (32 times) in order to correct the variation of the contact point P _X of the input pen in the X-axis direction (step S2-6).

Next, the detected voltage variation is a constant value (3
0 mV) or less is detected (step S2-7). MP
If the variation is 30 mV or more, U10 judges that it is not pressure for coordinate input, because the input method is abnormal.
Return to step S2-2.

When the variation of all the measured values is 30 mV or less, the MPU 10 judges that the pressure is applied for inputting the coordinates with the input pen, and averages all the measured values to obtain the X coordinate P _X.
Data X _low (step S2-8).

Next, the MPU 10 operates the FETs Q _{Xa- 1 to} Q _Xa-5.
And after turning off the FETs Q _{Xb-1 to} Q _Xb-5 , the switch S
W ₁ and FETs Q _{Xb-1 to} Q _Xb-5 are turned on (step S2-9).

Next, the MPU 10 again detects the level of the interrupt input terminal (step S2-10).

If the interrupt input terminal is at a high level, it means that the input pen is not pressurizing.
It is determined that measurement cannot be performed, and the process returns to step S2-2.

At this time, if the interrupt input terminal is at the low level, it means that the pressure is applied by the input pen, so that the contact point P _{Y in} the Y-axis direction is detected next.

First, FETQ_Xa-1~ Q_Xa-5And FETQ
_Xb-1~ Q_Xb-5Turned off and FETQ _Ya-1~ Q_Ya-5And F
ETQ_Yb-1~ Q_Yb-5Is turned on (step S2-11)
 ).

Next, in order to detect the variation as in the case of detecting the contact point P _X , a plurality of (32) voltages are measured (step S2-12).

Next, the variation in all measurements is a constant value (30 mV)
It is detected whether or not the following (step S2-13).

Here, when the variation is 30 mV or more, M
The PU 10 determines that it is not the coordinate input operation as described above, and returns to step S2-2. If the variation is 30 mV or less, all measured values are averaged to obtain Y coordinate data Y _law (step S2-14).

Next, the MPU 10 returns to the FETs Q _{Ya-1 to} Q again.
Turn off _Ya-5 and FET Q _{Yb-1 to} Q _Yb-5, and turn off FET Q _Xb-1
~ Q _Xb-5 and the switch SW ₁ are turned on to judge whether the interrupt input terminal is at a low level or not (step S2-15,
S2-16).

If the interrupt input terminal is at the high level, the MPU 10 judges that the coordinate input operation is not performed because the pressure applied by the input pen is released in an instant, and the process proceeds to step S2-2. Return.

When the interrupt input terminal is at the low level, the MPU 10 judges that the pressurization by the input pen is continuing and it is the coordinate input operation, and the X and X obtained in step S2-8 and step S2-14 are determined. The coordinate input data is obtained from the maximum and minimum potentials obtained in advance from the Y coordinate data X _law and Y _law based on the equations (1) and (2), and the coordinate input data is transmitted to the host device (not shown). Then, the processing described above is performed again (step S2-17).

As described above, the coordinates pressed by the input pen are sequentially read.

According to this embodiment, the resistance film 2 and the FETs Q _Xa , Q _Xb , Q _Ya , and Q _Yb are mounted on the glass substrate 1, and the pattern formed when the resistance film 2 is formed on the glass substrate 1 is used. Connection is being made.

Therefore, the external connection lines need only be four gate lines, one power supply (V _CC ) connection, and one ground connection.

In this way, the number of external connection lines can be reduced.

Further, since the MPU 10 only needs to be operated at the time of inputting coordinates, current consumption can be reduced.

FIG. 8 is a block diagram showing the essential parts of the second embodiment of the present invention. In the figure, the same components as those in FIGS. 1 to 3 are designated by the same reference numerals, and the description thereof will be omitted.

The present embodiment differs from the first embodiment in the method of calculating the position from the detection potentials V _X and V _Y , and the other constructional operations are the same as those in the first embodiment.

In this embodiment, the same F as the FETs Q _X and Q _Y is used.
ETQ _Z is used to find the constant of the arithmetic expression.

The resistor R ₂ and the FET Q _Z are connected between the power source V _CC and the ground, the FET Q _Z is turned on, and the same current as when mounted at this time flows in the FET Q _Z so that the resistor R ₂ is connected. Limit the value.

The voltage applied to the FET Q _Z in the above state is measured in advance.

The measuring method is as follows:
This is performed while switching the connection with the D converter 11.

The switch circuit 14 is a switch SW.₇, SW
₈, SW₉Consists of. Switch SW ₇Is the conductive film 8 and A /
A conductive film 8 provided between the D converter 11 and the A / D converter
The connection with the inverter 11 is turned on / off.

The switch SW ₈ has a resistor R ₂ and an FET Q _Z.
Is provided between the connection point and the A / D converter 11 to turn on / off the connection between the connection point and the A / D converter 11. The switch SW ₉ is provided between the ground line and the A / D converter 11, and turns on / off the connection between the ground line and the A / D converter 11.

FETQ_ZVoltage Vfd applied to
First, switch SW₇To turn off. Switch S
W₈ON, switch SW₉Off, FETQ_Z
And resistance R₂Find the potential at the connection point with. Then switch
SW₉ON, switch SW ₈Turn off the ground level
Ask for le. MPU10 has the potential of the connection point and the ground level.
The potential difference between the two is calculated and set as Vfd.

The resistance film 2 is formed of FETs Q _Xa , Q _Xb or FETs.
The power supply voltage V _CC is applied via Q _Ya and Q _Yb . Therefore, the voltage applied to the resistance film 2 is obtained by (V _CC -2Vfd). Therefore, for example, the contact position P in the X-axis direction
_X will be calculated by the following formula.

P _X = L _X × {(V _X −Vfd) / (V _CC −2 × Vfd)} (3) where L _X is the length of the resistive film 2 in the X-axis direction, and V _X is the X-axis. The potential of the contact position in the direction.

Similarly, the contact position P _Y in the Y-axis direction is calculated by the following equation.

P _Y = L _Y × {(V _Y −V fd) / (V _CC −2 × V f d)} (4) where L _Y is the length of the resistive film 2 in the Y-axis direction and V _Y is the contact position. Is the potential of.

The contact positions (P _X , P _Y ) can be obtained from the above equations (3) and (4).

FIG. 9 shows a schematic block diagram of the third embodiment of the present invention. In the figure, the same components as those in FIGS. 1 to 3 are designated by the same reference numerals, and the description thereof will be omitted.

This embodiment has a structure in which a diode is used as a switching element in place of the FET in the first embodiment, there is no gate line 4 _-1 to _{4 -4} , and a diode is mounted in place of the FET to carry out the first embodiment. It is almost the same as the example.

Two axes (X axis, Y axis) orthogonal to the resistance film 2
Electrodes facing each other_a-1~ X _a-5, X_b-1~ X
_b-5And Y_a-1~ Y_a-5And Y_b-1~ Y_b-5Is provided
There is. Electrode X_a-1~ X_a-5, X_b-1~ X_b-5, Y_a-1~
Y_a-5, Y_b-1~ Y_b-5Is the diode D_Xa-1~ D_Xa-5，
D_Xb-1~ D_Xb-5, D_Ya-1~ D_Ya-5, D_Yb-1~ D_Yb-5Against
I am responding. Electrode X_a-1~ X_a-5Diode D_Xa-1
~ D_Xa-5The anodes of_b-1~
X_b-5Diode D_Xb-1~ D_Xb-5That's the cathode
Connected to each, electrode Y_a-1~ Y_a-5Diode D
_Ya-1~ D_Ya-5The cathodes of the
_b-1~ Y_b-5Diode D_Yb-1~ D_Yb-5The anode of
Are connected respectively. Diode D_Xa-1~ D_Xa-5
Cathode and diode D_Ya-1~ D_Ya-5The anode is
Common line L on the lath board 1₁(For power line 3b
Connected), switch SW_Ten, SW₁₁Power through
Voltage V_CCAnd is connected to ground. Diode D_Xb-1
~ D_Xb-5Anode and diode D _Yb-1~ D_Yb-5The Kaso
The line is a common line L on the glass substrate 1.₂(Earth line
3a) (corresponding to 3a).

FIG. 10 is a plan view of the essential parts of the third embodiment of the present invention, and FIG. 11 is a sectional view of the essential parts of the third embodiment of the present invention. In the figure, the same components as those in FIGS. 1, 2 and 3 are designated by the same reference numerals, and the description thereof will be omitted.

In this embodiment, the FET shown in FIGS.
Q_Xa, Q_Ya, Q_Xb, Q_YbDiode D _Xa, D_Ya，
D_Xb, D_YbInstead of the gate line 4,
Has been.

In this embodiment, a diode is used and the bias direction is switched to switch between the X-axis direction and the Y-axis direction.

The change of the bias direction is performed by the switch SW ₁₀ ,
This is performed by SW ₁₁ , SW ₁₂ , and SW ₁₃ .

When detecting the coordinate position in the X-axis direction,
Switch SW₁₁, SW₁₂ON, switch SW_Ten, SW
₁₃Is off. This allows the diode D_Xa-1~
D_Xa-5, D _Xb-1~ D_Xb-5Is forward biased and on
And diode D_Ya-1~ D_Ya-5, D _Yb-1~ D_Yb-5The opposite
Is biased in the direction of OFF and turned off, and voltage is applied to the resistance film 2 in the X-axis direction.
Is applied.

When detecting the coordinate position in the Y-axis direction, the switches SW ₁₀ and SW ₁₃ are turned on and the switch S is turned on.
Turn off W ₁₁ and SW ₁₂ . This allows the diode D _Ya-1
~ D _Ya-5 , D _Yb-1 ~ D _Yb-5 are forward biased and turned on, and the diodes D _Xa-1 ~ D _Xa-5 , D _Xb-1 ~ D _Xb-5 are turned in the reverse direction. It is biased off and a voltage is applied to the resistance film 2 in the Y-axis direction.

By switching control of the switches SW ₁₀ , SW ₁₁ , SW ₁₂ , and SW ₁₃ by the switch control signal from the MPU ₁₀ , the diodes D _{Xa-1 to} D _Xa-5 , D _Xa-5 .
_{Xb-1 to} D _Xb-5 , D _{Ya-1 to} D _Ya-5 , D _{Yb-1 to} D _Yb-5 are first
FETQ _{Xa -1} ~Q _Xa-5 described in Example, Q _Xb-1 ~Q
Switching control is performed as in _Xb-5 , Q _{Ya-1 to} Q _Ya-5 , and Q _{Yb-1 to} Q _Yb-5 .

The method of calculating the coordinate position (P _X , P _Y ) in the MPU 10 is the same as that shown in the first and second embodiments.

[0102]

As described above, according to claim 1, a plurality of switching elements for switching control of the applied voltage of the resistive film are mounted on the insulating substrate on which the resistive film whose applied voltage is controlled to be switched is formed. Since the connection lines of a plurality of switching elements are integrated and connected to an external circuit, the number of external connection lines can be reduced.

According to the second aspect, since it is not necessary to always apply the voltage to the resistance film, there is a feature that the current consumption can be reduced.

According to the third aspect, since the coordinate input is not performed by the temporary pressurization, there is a feature that erroneous input can be prevented.

According to the fourth aspect, even if the conductive film and the resistance film are not in contact with each other due to unstable pressure during coordinate input, the conductive film and the resistance film are detected again after a lapse of a certain time, and the coordinates are detected. Since it judges whether or not it is an input, it has features such as preventing erroneous detection at the time of coordinate input or erroneous input.

According to the fifth aspect, since the voltage drop due to the switching element can be corrected, there is a feature that accurate coordinate position detection can be performed.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a first embodiment of the present invention.

FIG. 2 is a plan view of a main part of the first embodiment of the present invention.

FIG. 3 is a sectional view of an essential part of the first embodiment of the present invention.

FIG. 4 is a characteristic diagram of electric field distortion with respect to a position when the number of electrodes on one side is used as a parameter.

FIG. 5 is a configuration diagram of a main part of the first embodiment of the present invention.

FIG. 6 is a diagram for explaining the operation of the first embodiment of the present invention.

FIG. 7 is a diagram for explaining the operation of the first embodiment of the present invention.

FIG. 8 is a configuration diagram of a main part of a second embodiment of the present invention.

FIG. 9 is a schematic configuration diagram of a third embodiment of the present invention.

FIG. 10 is a plan view of an essential part of a third embodiment of the present invention.

FIG. 11 is a sectional view of an essential part of a third embodiment of the present invention.

[Explanation of symbols]

 1 Glass Substrate 2 Resistive Film 8 Conductive Film 10 MPU

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsuya Irie 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited

Claims (5)

[Claims] 1. A plurality of point electrodes (X _a-1 to
Xa _-5 , _{Xb-1 to Xb-5} , Ya _{-1 to} Ya _-5 , Yb _{-1 to} Y
_b-5 ) has a first substrate (1) on which a resistance film (2) is formed and a conductive film (8) formed so as to face the resistance film (2). A plurality of electrodes, which are composed of a second substrate (7) formed so that the pressed portions (P _X , P _Y ) of the conductive film (8) come into contact with the resistance film (2) when pressure is applied. (Xa _{-1 to} Xa _-5 , _{Xb-1 to Xb-5} , Ya _{-1 to} Y
_a-5 , Y _{b-1 to} Y _{b- 5} ) switching elements (Q _{Xa-1 to} Q _Xa-5 , Q _{Xb-1 to} Q _Xb-5 , Q _{Ya-1 to} Q) provided in each of them.
_Ya-5 , Q _{Yb-1 to} Q _Yb-5 ; _{DXa-1 to} DXa _-5 , _{DXb-1 to} D
_Xb-5 , D _{Ya-1 to} D _Ya-5 , D _{Yb-1 to} D _Yb-5 ) are switching-controlled, so that two-sided dot-shaped electrodes (opposite to each other alternately in biaxial directions orthogonal to each other) X _{a-1 to} X _a-5 , X
to _{b-1 ~X b-5,} Y a-1 ~Y a-5, Y b-1 ~Y b-5) between, applying a voltage, the pressurization portion (P _X, with P _Y) the pressurized portion by detecting a potential of the conductive layer _{(8) (P X, P} Y) in the coordinate input apparatus for detecting a coordinate position of said switching element _{(Q Xa-1 ~Q Xa-} 5, Q _Xb-1 ~ Q
_Xb-5 , Q _{Ya-1 to} Q _Ya-5 , Q _{Yb-1 to} Q _Yb-5 ) together with common wiring are mounted on the first substrate (1). . And wherein contact detecting means for detecting the contact between the said conductive layer (8) resistive film _{(2) (SW 1, R} 1), said conductive by said contact detection means (SW _1, R ₁₎ When the contact between the film (8) and the resistance film (2) is detected, the point electrodes (Xa _{-1 to} Xa _-5 , _{Xb-1 to Xb-5} , Ya _-1).
A voltage is applied to _{~Y a-5, Y b-} 1 ~Y b-5), and having a said pressing position (P _x, measuring means (10 for performing measurement of P _y)) The coordinate input device according to claim 1. 3. The measuring means (10) measures the position of the pressure portion (P _X , P _Y ) in the uniaxial direction, and then the contact detecting means (SW ₁ , R ₁ ) again measures the conductive film ( ₁₀ ). 8) and the resistance film (2) are detected, and when the conductive film (8) and the resistance film (2) are in contact with each other,
The coordinate input device according to claim 2, wherein the position measurement of the other of the pressure portions (P _X , P _Y ) in the axial direction is performed. 4. The measuring means (10) is predetermined when the contact detecting means (SW ₁ , R ₁ ) detects non-contact between the conductive film (8) and the resistive film (2). The coordinate input device according to claim 2 or 3, wherein the contact between the conductive film (8) and the resistance film (2) is detected again after a certain time has elapsed. 5. The measuring means (10) is configured to detect the switching elements (Q _{Xa-1 to} Q _Xa-5 , Q _{Xb-1 to} Q) detected in advance.
_Xb-5 , Q _{Ya-1 to} Q _Ya-5 , Q _{Yb-1 to} Q _Yb-5 ; D _{Xa -1 to} D
_Xa-5 , D _{Xb-1 to} D _Xb-5 , D _{Ya-1 to} D _Ya-5 , D _{Yb-1 to} D
The coordinate input device according to any one of claims 1 to 4, wherein the potential at the pressing position detected by the conductive film (8) is corrected based on the voltage drop of _Yb-5 ).