JPH05283965A - Manufacturing of saw device - Google Patents

Manufacturing of saw device

Info

Publication number
JPH05283965A
JPH05283965A JP7648592A JP7648592A JPH05283965A JP H05283965 A JPH05283965 A JP H05283965A JP 7648592 A JP7648592 A JP 7648592A JP 7648592 A JP7648592 A JP 7648592A JP H05283965 A JPH05283965 A JP H05283965A
Authority
JP
Japan
Prior art keywords
pattern
pitch
saw device
electrode part
outer peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7648592A
Other languages
Japanese (ja)
Inventor
Tsutomu Sato
勉 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7648592A priority Critical patent/JPH05283965A/en
Publication of JPH05283965A publication Critical patent/JPH05283965A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To improve yield by restraining the dispersion of a characteristic by preparing chip groups where pitchs of an input/output comb type electrode part are changed in steps when many chip shaped SAW devices are arranged. CONSTITUTION:Plural pieces of pattern 2 for chip shaped SAW device composed of an input/output comb type electrode part 3 and a pad electrode part 4 are arrayed in a grid-shape on the upper surface of a pattern main body 1 by taking a pattern 2 as one unit. The width dimension of the electrode part 3 is made 1/4 of a pitch (a) Figure is divided into two blocks of a center part A and an outer peripheral part B by defining the location surrounded by a thick solid line as a boundary, and the pitch dimension (a) of the electrode part 3 of the pattern 2 arranged on the A part and the pitch dimension (a) of the electrode part 3 of the pattern 2 arranged on the outer peripheral part B are different from each other. When the pitch (a) of the electrode part 3 of the center part A is made 1.0, that of the outer peripheral part B side is made 1.0006 so that the pitch (a) of the electrode part 3 of the outer peripheral part B may be larger than that of the part A. Further, respective chip groups have a frequency difference of 200kHz in advance.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は通信機器などに使用され
るSAWデバイスの製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a SAW device used for communication equipment and the like.

【0002】[0002]

【従来の技術】以下に従来のSAWデバイスの製造方法
について説明する。
2. Description of the Related Art A conventional SAW device manufacturing method will be described below.

【0003】図5は従来のSAWデバイスの製造方法を
示すものであり、同図に示すように、圧電体基板の片面
にエレクトロンビーム法、または抵抗加熱法、あるいは
スパッタリング法等によりアルミニウム等の金属を蒸着
させる金属薄膜形成工程と、形成された金属薄膜をフォ
トリソグラフィ法やドライエッチング法等により入出力
の櫛型電極部およびパット電極部からなるチップ状のS
AWデバイスを格子状に複数個配列したパターンを圧電
体基板上に形成するパターンニング工程と、上記入出力
の櫛型電極部およびパット電極部が形成されていない部
分で複数のチップに切断するチップ分割工程と、分割さ
れた各チップをベースとなるステムに接着固定するダイ
ボンド工程と、接着固定されたチップとステムとを電気
的に接続するワイヤボンディング工程と、チップが接着
固定され電気的に接続されたステムをキャンにより封止
する封止工程と、この一連の工程で作製したSAWデバ
イスの電気的特性を測定する特性試験工程を経て、ここ
で良否を判別して完成させるという製造方法によりチッ
プ状のSAWデバイスを得るものであった。
FIG. 5 shows a conventional method for manufacturing a SAW device. As shown in FIG. 5, a metal such as aluminum is formed on one surface of a piezoelectric substrate by an electron beam method, a resistance heating method, a sputtering method or the like. And a metal thin film forming step of vapor-depositing the metal thin film formed by a photolithography method, a dry etching method, or the like.
A patterning step of forming a pattern in which a plurality of AW devices are arranged in a grid pattern on a piezoelectric substrate, and a chip which is cut into a plurality of chips at a portion where the input / output comb-shaped electrode portion and the pad electrode portion are not formed Dividing process, die-bonding process for adhesively fixing each divided chip to the stem that is the base, wire bonding process for electrically connecting the adhesively fixed chip and stem, and electrically connecting the chips by adhesive fixing After the sealing step of sealing the formed stem with a can and the characteristic test step of measuring the electrical characteristics of the SAW device produced in this series of steps, the chip is manufactured by the method of determining the quality and completing. To obtain a SAW device in the shape of a circle.

【0004】[0004]

【発明が解決しようとする課題】しかしながら上記従来
のSAWデバイスの製造方法では圧電体基板の結晶方位
を設定し、その結晶方位に応じた金属薄膜の設定を行
い、更にその金属薄膜の設定に応じた所望の周波数特性
を有するように入出力の櫛型電極部のピッチを設定する
ために、パターンニング工程で使用するマスクパターン
は設定された金属薄膜に対応して格子状に配列した複数
個のチップがすべて均一に形成されたものであった。
However, in the above-mentioned conventional method for manufacturing a SAW device, the crystal orientation of the piezoelectric substrate is set, the metal thin film is set according to the crystal orientation, and the metal thin film is set according to the setting of the metal thin film. In order to set the pitch of the comb-shaped electrode parts for input and output so as to have the desired frequency characteristics, the mask pattern used in the patterning process is composed of a plurality of grids arranged corresponding to the set metal thin film. All the chips were formed uniformly.

【0005】しかしながらエレクトロンビーム法、また
は抵抗加熱法、あるいはスパッタリング法等により蒸着
される金属薄膜形成工程は必ずしも均一な厚みが得られ
るものではなく、むしろ圧電体基板上で数%程度の膜厚
分布を持つのが大多数であり、一般的にSAWデバイス
の電気的特性である周波数特性は圧電体基板上を伝わる
弾性表面波の伝搬速度により決定され、この弾性表面波
の伝搬速度は圧電体基板の結晶方位ならびに入出力の櫛
型電極部のピッチおよび厚み等により決定されるという
ことから、圧電体基板上に格子状に複数個形成されるそ
れぞれのチップには、入出力の櫛型電極部の金属薄膜の
厚みにより所望の周波数特性を有さない製品が作製さ
れ、不良品となり製造歩留りが低下するという問題があ
った。
However, the metal thin film forming step of vapor deposition by the electron beam method, the resistance heating method, the sputtering method or the like does not always obtain a uniform thickness, but rather the film thickness distribution of about several percent on the piezoelectric substrate. The frequency characteristics, which are generally the electrical characteristics of SAW devices, are determined by the propagation velocity of the surface acoustic wave propagating on the piezoelectric substrate. The propagation velocity of this surface acoustic wave is the piezoelectric substrate. It is determined by the crystal orientation of the piezoelectric element and the pitch and thickness of the input / output comb-shaped electrode portions. Therefore, each chip formed on the piezoelectric substrate in a grid pattern has an input / output comb-shaped electrode portion. Due to the thickness of the metal thin film, a product having a desired frequency characteristic is manufactured, resulting in a defective product and a reduction in manufacturing yield.

【0006】このような状態を図4に示し、同図は圧電
体基板位置において得られたSAWデバイスが有する周
波数特性を分布図で示したものであり、圧電体基板の中
心部では周波数特性が低く、外周部に向かうに伴って周
波数特性が高くなるのを示したものである。
Such a state is shown in FIG. 4, which is a distribution diagram showing the frequency characteristics of the SAW device obtained at the position of the piezoelectric substrate. The frequency characteristics are shown in the center of the piezoelectric substrate. It is shown that the frequency characteristics are low, and the frequency characteristics increase as the distance to the outer peripheral portion increases.

【0007】本発明は上記の問題点を解決するもので、
コストアップを防止し、かつ製造工程を追加することな
しに圧電体基板上の場所による特性バラツキを抑制し、
製造歩留りを向上させることが可能なSAWデバイスの
製造方法を提供することを目的としたものである。
The present invention solves the above problems.
Prevents cost increase and suppresses characteristic variations due to locations on the piezoelectric substrate without adding manufacturing steps,
It is an object of the present invention to provide a method for manufacturing a SAW device capable of improving the manufacturing yield.

【0008】[0008]

【課題を解決するための手段】この課題を解決するため
に本発明によるSAWデバイスの製造方法は、圧電体基
板上に形成された金属薄膜にパターン形成を行うフォト
リソグラフィ用マスクパターンを、櫛型電極部とパット
電極部からなるチップ状のパターンを1つの単位とし、
このチップを格子状に複数個配列した多数個取りのパタ
ーンとし、かつ上記櫛型電極部のピッチが中心部に配置
されるチップより外周部に配置されるチップの方が大き
いようにして同パターンを構成し、この同パターンを用
いてパターンニングを行って後、上記複数個のチップ群
を切断分割し、この分割された個々のチップをベースと
なるステムに接着固定し、この接着固定されたチップと
ステムをワイヤボンディングにより電気的に接続して封
止を行う製造方法としたものである。
In order to solve this problem, a method of manufacturing a SAW device according to the present invention is a method of forming a mask pattern for photolithography for patterning a metal thin film formed on a piezoelectric substrate in a comb shape. A chip-shaped pattern consisting of an electrode part and a pad electrode part is set as one unit,
A plurality of the chips are arranged in a grid pattern, and the pitch of the comb-shaped electrode portions is larger in the peripheral portion than in the central portion. After performing patterning using this same pattern, the plurality of chip groups are cut and divided, and the divided individual chips are adhesively fixed to a stem serving as a base, and this adhesive fixation is performed. This is a manufacturing method in which a chip and a stem are electrically connected by wire bonding and sealing is performed.

【0009】[0009]

【作用】この製造方法により、予め段階的に入出力の櫛
型電極部のピッチを変えて周波数が異なるように作製し
たマスクパターンを、圧電体基板上で数%程度の膜厚分
布を持って形成された金属薄膜のそれぞれの厚みに対応
させることにより、所望の周波数特性を有するチップを
ほぼ全数にわたって作製することができる。
With this manufacturing method, a mask pattern, which is prepared in advance by gradually changing the pitch of the comb-shaped electrode portions for input and output so as to have different frequencies, has a film thickness distribution of about several percent on the piezoelectric substrate. Corresponding to the respective thicknesses of the formed metal thin films, almost all chips having desired frequency characteristics can be manufactured.

【0010】[0010]

【実施例】以下、本発明の一実施例について図面を用い
て説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

【0011】なお、製造工程は従来例で図5を用いて説
明した製造工程と同様であるため、詳細な説明は省略す
る。
Since the manufacturing process is the same as the manufacturing process described with reference to FIG. 5 in the conventional example, detailed description will be omitted.

【0012】本実施例において、上記図5の金属薄膜形
成工程の形成方法に抵抗加熱法を採用した場合、圧電体
基板上の金属薄膜の厚みは中心部が厚く、周辺部が薄く
なる特長がある。したがって、従来のフォトリソグラフ
ィ用マスクパターンを用いてチップ状のSAWデバイス
を作製すると、周波数特性は中心部を基準とした場合に
上記従来例の図4のグラフに示すように中心部が低く、
周辺部が高くなる。仮に、この周波数特性のバラツキを
400kHzとした時、求められているバラツキ精度が2
00kHzであったならば、製造歩留りは約50%という
ことになり、この周波数特性のバラツキをフォトリソグ
ラフィ用マスクパターンで解決する方法について詳細に
説明する。
In the present embodiment, when the resistance heating method is adopted in the forming method of the metal thin film forming step of FIG. 5, the thickness of the metal thin film on the piezoelectric substrate is thick in the central portion and thin in the peripheral portion. is there. Therefore, when a chip-shaped SAW device is manufactured using the conventional photolithography mask pattern, the frequency characteristic is low in the central portion as shown in the graph of FIG.
The peripheral area becomes high. If the variation of this frequency characteristic is 400 kHz, the required variation accuracy is 2
If it was 00 kHz, the manufacturing yield would be about 50%, and a method of solving this variation in frequency characteristics with a mask pattern for photolithography will be described in detail.

【0013】図1は本実施例によるフォトリソグラフィ
用マスクパターンを示す平面図であり、パターン本体1
の上面に入出力の櫛型電極部3とパット電極部4からな
るチップ状のSAWデバイス用パターン2を1つの単位
とし、このSAWデバイス用パターン2を格子状に複数
個配列した多数個取りによってパターン本体1を構成し
ている。
FIG. 1 is a plan view showing a photolithographic mask pattern according to this embodiment.
A chip-shaped SAW device pattern 2 composed of input / output comb-shaped electrode portions 3 and pad electrode portions 4 is set as one unit on the upper surface of the above, and a plurality of the SAW device patterns 2 are arranged in a grid pattern. The pattern body 1 is configured.

【0014】また、個々のSAWデバイス用パターン2
は、図2にその要部を示すように、入出力の櫛型電極部
3とパット電極部4より形成され、本実施例では上記櫛
型電極部3の幅寸法は櫛型電極部3のピッチ寸法aの1
/4になるように形成した。
Further, the pattern 2 for each SAW device
2 is composed of an input / output comb-shaped electrode portion 3 and a pad electrode portion 4 as shown in FIG. 2, and the width dimension of the comb-shaped electrode portion 3 is the same as that of the comb-shaped electrode portion 3 in this embodiment. 1 of pitch dimension a
It was formed to be / 4.

【0015】このように形成された個々のSAWデバイ
ス用パターン2を格子状に複数個配列した構成の上記図
1では、同図の太実線で囲んだ位置を境界にして中心部
Aと外周部Bの2つのブロックに分割し、この中心部A
に配置されるSAWデバイス用パターン2の櫛型電極部
3のピッチ寸法aと、外周部Bに配置されるSAWデバ
イス用パターン2の櫛型電極部3のピッチ寸法aに変化
を持たせ、本実施例では中心部Aの同ピッチ寸法aを
1.0とした場合に外周部Bの同ピッチ寸法aが1.0
006の比率となるように外周部B側を大きくし、それ
ぞれのチップ群に200kHzの周波数差をあらかじめ持
たせるように構成した。
In the structure shown in FIG. 1 in which a plurality of individual SAW device patterns 2 thus formed are arranged in a grid pattern, the central portion A and the outer peripheral portion are bordered by the positions surrounded by thick solid lines in FIG. It is divided into two blocks of B and this central part A
The pitch dimension a of the comb-shaped electrode portion 3 of the SAW device pattern 2 arranged on the outer peripheral portion B and the pitch dimension a of the comb-shaped electrode portion 3 of the SAW device pattern 2 arranged on the outer peripheral portion B are changed. In the embodiment, when the same pitch dimension a of the central portion A is 1.0, the same pitch dimension a of the outer peripheral portion B is 1.0.
The outer peripheral portion B side is enlarged so as to have a ratio of 006, and each chip group is configured to have a frequency difference of 200 kHz in advance.

【0016】このようにして作製したフォトリソグラフ
ィ用マスクパターンを用いて、以下前述の従来例で説明
した製造方法により作製したSAWデバイスの周波数特
性を図3に分布図で示す。同図から明確なように、圧電
体基板の上面に形成された金属薄膜のバラツキに対応す
るようにあらかじめ周波数差を持たせて形成したフォト
リソグラフィ用マスクパターンを用いることにより、上
記同パターンの中心部A群のチップと、外周部B群のチ
ップの周波数特性はそのバラツキが抑制され、所望通り
に200kHzの範囲内に収めることができ、ほぼ100
%の製造歩留りを確保することができる。
The frequency characteristics of the SAW device manufactured by the manufacturing method described in the above-mentioned conventional example using the mask pattern for photolithography manufactured in this way are shown in a distribution chart in FIG. As is clear from the figure, by using a photolithography mask pattern formed in advance with a frequency difference corresponding to the variation of the metal thin film formed on the upper surface of the piezoelectric substrate, The frequency characteristics of the chips of the group A and the chips of the peripheral portion B are suppressed from varying and can be kept within a range of 200 kHz as desired, and the frequency characteristics are almost 100.
% Manufacturing yield can be secured.

【0017】また、上記本実施例では200kHzの周波
数差を補正するためにパターン本体1を中心部Aと外周
部Bの2ブロックに分割する構成としたが、100kH
z,50kHzといった周波数のように、更にバラツキ精
度を向上させる場合に対しても、1枚のフォトリソグラ
フィ用マスクパターンの中に複数段階に細分割して入出
力の櫛型電極部のピッチを変えたチップ群を配置してや
れば容易に対処できるということは言うまでもないこと
である。
In the above embodiment, the pattern body 1 is divided into two blocks, the central portion A and the outer peripheral portion B, in order to correct the frequency difference of 200 kHz.
Even when the accuracy of variation is further improved like the frequency of z and 50 kHz, the pitch of the comb-shaped electrode portion of the input and output is changed by subdividing the mask pattern for one photolithography into a plurality of stages. It goes without saying that it is possible to easily deal with this by arranging a chip group.

【0018】[0018]

【発明の効果】以上のように本発明によるSAWデバイ
スの製造方法は、フォトリソグラフィ用マスクパターン
を作製する際に段階的に入出力の櫛型電極部のピッチを
変えたチップ群を作製することにより、SAWデバイス
の製造工程になんら特別な工程を追加することなく対応
できるだけではなく、各々のSAWデバイスの周波数特
性のバラツキを抑制し、製造歩留りを飛躍的に向上させ
てコストダウンを図ることができるものである。
As described above, in the method for manufacturing a SAW device according to the present invention, when the mask pattern for photolithography is manufactured, the chip group in which the pitch of the comb-shaped electrode portions for input and output is changed stepwise is manufactured. As a result, it is possible to deal with the SAW device manufacturing process without adding any special process, and it is possible to suppress the variation in the frequency characteristics of each SAW device, dramatically improve the manufacturing yield, and reduce the cost. It is possible.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例におけるフォトリソグラフィ
用マスクパターンの平面図
FIG. 1 is a plan view of a mask pattern for photolithography according to an embodiment of the present invention.

【図2】同実施例によるSAWデバイスの同パターンを
示す要部の平面図
FIG. 2 is a plan view of a main part showing the same pattern of a SAW device according to the same embodiment.

【図3】同実施例により得られたSAWデバイスの周波
数特性図
FIG. 3 is a frequency characteristic diagram of a SAW device obtained in the same example.

【図4】従来のSAWデバイスの周波数特性図FIG. 4 is a frequency characteristic diagram of a conventional SAW device.

【図5】従来および本発明によるSAWデバイスの製造
方法を示す製造工程図
FIG. 5 is a manufacturing process diagram showing a method for manufacturing a SAW device according to the related art and the present invention.

【符号の説明】[Explanation of symbols]

1 パターン本体 2 SAWデバイス用パターン 3 櫛型電極部 4 パット電極部 1 Pattern body 2 SAW device pattern 3 Comb type electrode part 4 Pat electrode part

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】圧電体基板上に金属薄膜を形成し、この金
属薄膜に櫛型電極部とパット電極部からなるチップ状の
SAWデバイスの上記櫛型電極部のピッチが中心部に配
置されるチップより外周部に配置されるチップの方が大
きいものであるように格子状に複数個配列されたフォト
リソグラフィ用マスクパターンによりパターンニングを
行って後、上記複数個のチップ群を切断分割し、この分
割された個々のチップをベースとなるステムに接着固定
し、この接着固定されたチップとステムをワイヤボンデ
ィングにより電気的に接続して封止を行うSAWデバイ
スの製造方法。
1. A metal thin film is formed on a piezoelectric substrate, and the pitch of the comb-shaped electrode portions of a chip-shaped SAW device consisting of the comb-shaped electrode portion and the pad electrode portion is arranged in the center portion of the metal thin film. After performing patterning with a photolithographic mask pattern arranged in a lattice so that the chips arranged in the outer peripheral portion are larger than the chips, the plurality of chip groups are cut and divided, A method for manufacturing a SAW device, in which the divided individual chips are adhesively fixed to a stem serving as a base, and the adhesively fixed chip and the stem are electrically connected by wire bonding for sealing.
JP7648592A 1992-03-31 1992-03-31 Manufacturing of saw device Pending JPH05283965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7648592A JPH05283965A (en) 1992-03-31 1992-03-31 Manufacturing of saw device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7648592A JPH05283965A (en) 1992-03-31 1992-03-31 Manufacturing of saw device

Publications (1)

Publication Number Publication Date
JPH05283965A true JPH05283965A (en) 1993-10-29

Family

ID=13606514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7648592A Pending JPH05283965A (en) 1992-03-31 1992-03-31 Manufacturing of saw device

Country Status (1)

Country Link
JP (1) JPH05283965A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007209000A (en) * 2007-02-21 2007-08-16 Infineon Technologies Ag Method for manufacturing layer having predetermined layer thickness characteristic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007209000A (en) * 2007-02-21 2007-08-16 Infineon Technologies Ag Method for manufacturing layer having predetermined layer thickness characteristic

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