JPH05283671A - Optical integrated circuit device - Google Patents

Abstract

PURPOSE:To control resistance across a semiconductor element to a low value by reflecting an output light of one semiconductor optical device by a reflecting film and introducing it to all of the elements is other semiconductor optical devices. CONSTITUTION:A necessary power source is connected between first and second power source terminals (wiring layers 32, 33) of semiconductor optical devices U with respect to a semiconductor optical device Ua of a plurality of semiconductor optical devices U and the other six semiconductor optical devices Ub arranged around the device Ua. A light L1 is radiatet from the exterior under a semi-insulating semiconductor substrate 1 to a semiconductor optical switch element S of the device Ua and semiconductor optical switch elements S of the other six semiconductor optical devices Ub through windows 16. The seven elements S can be simultaneously turned ON so that emitted lights therefrom are obtained as output lights L2. Six output lights L2 are incident on a photodetector R of the device Ua to make the photodetector R of the device Ua in a state having only a low resistance.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a neural network.
The present invention relates to an optical integrated circuit device applicable to a device.

[0002]

2. Description of the Related Art Conventionally, an optical integrated circuit device applicable to a neural network device has been proposed, but it cannot be put to practical use because of its complexity, size increase, and large power consumption. It was

Therefore, the present invention is a neural network.
It can be easily applied to the device as a practical application.
The purpose is to propose a new optical integrated circuit device.

[0004]

An optical integrated circuit device according to the present invention comprises: (i) a semiconductor optical device having a memory function, which is an optical thyristor, on a first main surface of a semi-insulating semiconductor substrate having a light transmitting property. A plurality of semiconductor optical devices having a switch element and a semiconductor light receiving element formed of a phototransistor are formed in a one-dimensional or two-dimensional array, and (ii)
An optical thyristor as a semiconductor optical switch element included in each of the plurality of semiconductor optical devices is provided with a first conductivity type as a cathode on a first main surface of the semi-insulating semiconductor substrate. A semiconductor layer, a second semiconductor layer having a second conductivity type as a first gate, a third semiconductor layer having a first conductivity type as a second gate, and an anode.
And a fourth semiconductor layer having a second conductivity type as a layer and a first semiconductor laminate having a configuration in which they are stacked in that order, and (iii) above. A phototransistor as a semiconductor light receiving element included in each of the plurality of semiconductor optical devices, a fifth semiconductor layer having a first conductivity type as an emitter on the first main surface of the semi-insulating semiconductor substrate; A sixth semiconductor layer having a second conductivity type as a base and a seventh semiconductor layer having a first conductivity type as a collector are laminated in this order. (Iv) In each of the plurality of semiconductor optical devices, there is provided a fourth semiconductor device as an anode that constitutes an optical thyristor as the semiconductor optical switch element. The semiconductor layer is The second semiconductor layer, which is connected to the first power source terminal and constitutes the optical thyristor as the semiconductor optical switching element, constitutes the phototransistor as the semiconductor light receiving element. The first semiconductor layer, which is connected to the seventh semiconductor layer as the collector and constitutes the optical thyristor as the semiconductor optical switching element, is connected to the first power source end via a resistor. A fifth as an emitter forming a phototransistor as the semiconductor light receiving element
The semiconductor layer of is connected to the first power supply end, and
(V) On the second main surface of the semi-insulating semiconductor substrate facing the first main surface, a plurality of windows are provided at positions facing optical thyristors as semiconductor optical switch elements of the plurality of semiconductor optical devices. And a reflective film having the above is formed.

In the optical integrated circuit device according to the second invention of the present application, (i) a semiconductor layer as a resistance layer is formed on the first main surface of a semi-insulating semiconductor substrate having a light-transmitting property, and (Ii) A plurality of semiconductor optical devices having an optical thyristor as a semiconductor optical switch element having a memory function and a phototransistor as a semiconductor light receiving element on the semiconductor layer as the resistance layer are one-dimensional or two-dimensional. In this case, (iii) an optical thyristor as a semiconductor optical switch element included in each of the plurality of semiconductor optical devices is provided on the semiconductor layer as the resistance layer with a first as a cathode. A first semiconductor layer having a second conductivity type, a second semiconductor layer having a second conductivity type as a first gate, and a first semiconductor type having a first conductivity type as a second gate. 3 semiconductors And a fourth semiconductor layer having a second conductivity type as an anode, which is formed by laminating in that order, a first semiconductor laminated body, and (Iv) A phototransistor as a semiconductor light receiving element included in each of the plurality of semiconductor optical devices includes a semiconductor layer as the resistance layer, a fifth semiconductor layer having a first conductivity type as an emitter, and a base layer. -
A sixth semiconductor layer having a second conductivity type as a substrate and a seventh semiconductor layer having a first conductivity type as a collector are laminated in this order to form a second semiconductor layer. A semiconductor laminated body is used, and (v)
In each of the plurality of semiconductor optical devices, a fourth semiconductor layer as an anode forming an optical thyristor as the semiconductor optical switching element is connected to a first power source end, and the semiconductor optical switching element is provided. The second semiconductor layer as the first gate constituting the optical thyristor as the above is connected to the seventh semiconductor layer as the collector constituting the phototransistor as the semiconductor light receiving element, and A first semiconductor layer as a cathode constituting an optical thyristor as a semiconductor optical switch element is formed by a region between the optical thyristor and the phototransistor of the semiconductor layer as the resistance layer at a first power source end. A fifth semiconductor layer as an emitter, which is connected through a resistor and constitutes a phototransistor as the semiconductor light receiving element, is Is connected to the first power supply terminal, also, (vi) above the semi-insulating semiconductor substrate first
A reflective film having a plurality of windows at positions facing the optical thyristor as the semiconductor optical switch element of the plurality of semiconductor optical devices is formed on the second main surface facing the main surface of the semiconductor optical device. Have.

[0006]

According to the optical integrated circuit device of the present invention,
Regarding one of the plurality of semiconductor optical devices (generally referred to as Ua) and another semiconductor optical device arranged around it (generally referred to as Ub), Between the first and second power source terminals, while being connected to a required power source, light is externally applied to the semiconductor optical switch element of the one semiconductor optical device Ua from the reflection film,
When the semiconductor optical switch element of the one semiconductor optical device Ua is made incident through a window facing the semiconductor optical device Ua, the semiconductor optical switch element of the one semiconductor optical device Ua is turned on so that light emission can be obtained as output light. In addition, the output light obtained from the semiconductor optical switch element of the one semiconductor optical device Ua is reflected by the reflective film, and some or all of the semiconductor optical devices Ub in the other semiconductor optical device Ub (this Is generally referred to as Ub ′),
It is possible to control the resistance at both ends of the semiconductor light receiving element of the semiconductor optical device Ub 'to a low value.

Therefore, the current flowing through the semiconductor optical switch element of the semiconductor optical device Ub 'can be controlled, and thus the intensity of light obtained from the semiconductor optical switch element of the semiconductor optical device Ub' can be controlled. it can.

Further, in this case, since the required power source for the semiconductor light receiving element formed of the phototransistor can be reliably obtained by taking into consideration the voltage across the resistor, the above-mentioned control can be stably performed.

From the above, according to the optical integrated circuit device of the present invention, the plurality of semiconductor optical devices are made to correspond to the processors corresponding to the neurons in the neural network, and the neural network device is provided. It can be easily applied as a material that can be put to practical use.

[0010]

Embodiment 1 Next, an embodiment of an optical integrated circuit device according to the present invention will be described with reference to FIGS.

The optical integrated circuit device according to the present invention shown in FIGS. 1 to 3 has a structure described below. $, That is, a semi-insulating semiconductor substrate 1 made of, for example, InP having a property of transmitting light obtained from semiconductor optical switch elements S of a plurality of semiconductor optical devices U described later, and the semi-insulating semiconductor On the first main surface 1a of the substrate 1, a light-transmitting semiconductor layer 2 is formed as a resistance layer made of, for example, InP having an n-type.

Further, a plurality of semiconductor optical devices U are provided on the semiconductor layer 2 as a resistance layer with one semiconductor optical device U and a center point where the one semiconductor optical device U is arranged as a center. It is formed by arranging so that the other six semiconductor optical devices U are arranged at the six vertex positions of the prism.

In this case, each semiconductor optical device U has a semiconductor optical switching element S having a memory function which is an optical thyristor.
And a semiconductor layer M7 as a collector, which is arranged in a ring shape in the vicinity of the semiconductor optical switch element S and is close to the semiconductor optical switch element S as a first gate of the optical thyristor as the semiconductor optical switch element S. The semiconductor light receiving element R including a phototransistor connected to the layer M2.

In this case, the optical thyristor as the semiconductor optical switch element S included in each of the plurality of semiconductor optical devices U has an n-type as an electrode layer on the upper surface of the semi-insulating semiconductor substrate 1 and has an InGaAsP structure. A semiconductor layer 3 made of a system, a semiconductor layer M1 having an n-type as a cathode and made of InP, a p-type as a first gate, and an In
A semiconductor layer M2 made of GaAsP and an n-type semiconductor layer M made of InGaAsP as a second gate.
3, a semiconductor layer M4 having p-type as an anode and made of InP, and InGa having p-type as a cap layer
It has a structure using a semiconductor laminated body having a structure in which a semiconductor layer 4 made of AsP is laminated in that order.

A phototransistor as a semiconductor light receiving element R of each of the plurality of semiconductor optical devices U is formed on the upper surface of the semi-insulating semiconductor substrate 1 at the same time as the above-mentioned semiconductor layer 3 as an electrode layer. A semiconductor layer M5 having an n-type as an emitter, a semiconductor layer M6 having a p-type as a base formed at the same time as the above-described semiconductor layer M2, and a semiconductor layer M3 having the above-described semiconductor layer M3 formed at the same time. And a semiconductor layer M7 having an n-type as a collector to be stacked in that order is used.

Further, in each of the plurality of semiconductor optical devices U, the semiconductor layer M4 as an anode constituting the optical thyristor as the semiconductor optical switch element S is
Semiconductor layer 4, electrode layer 5 and wiring layer 3 formed thereon
A semiconductor layer M2 as a first gate, which is connected to a power source end (not shown) via 2 and constitutes an optical thyristor as a semiconductor optical switch element S, has a photo layer as a semiconductor light receiving element R. The semiconductor layer M7 as a collector forming a transistor is connected via the electrode layer 6 formed on the semiconductor layer M2, the wiring layer 31, and the electrode layer 8 formed on the semiconductor layer M7 to the semiconductor layer M7. The semiconductor layer M1 as a cathode forming the optical thyristor as the switch element S is connected to the semiconductor layer 3 at the power source end (not shown).
And a resistor 42 between the optical thyristor and the phototransistor of the semiconductor layer 2 as a resistance layer, and the electrode layer 11 and the wiring layer 33 formed on the semiconductor layer 3 are also connected to each other to form a semiconductor light receiving element R. The semiconductor layer M5 as an emitter forming the phototransistor is connected to the power source end via the electrode layer 9 and the wiring layer 33 formed on the semiconductor layer M5.

Further, on the surface facing the upper surface of the semi-insulating semiconductor substrate 1, a reflective film having a plurality of windows 16 at positions facing the optical thyristors as the semiconductor optical switch elements S of the plurality of semiconductor optical devices U, respectively. 15 is formed.

In FIG. 2, reference numeral 20 denotes insulating films 21, 22, 23 and 24 covering the semiconductor optical switch element S and the semiconductor light receiving element R of the plurality of semiconductor optical devices U, respectively.
It is a window of the insulating layer 20 that exposes the above-mentioned electrode layers 8, 6, 5 and 9 to the outside.

The above is the configuration of the embodiment of the optical integrated circuit according to the present invention.

According to the optical integrated circuit of the present invention having such a configuration, one semiconductor optical device (generally referred to as Ua) among the plurality of semiconductor optical devices U and the semiconductor optical device U are arranged immediately around it. Regarding the other six semiconductor optical devices (generally referred to as Ub), a required power source is connected between the first and second power supply terminals (wiring layers 32 and 33) of each semiconductor optical device U. Then, the input light L1 is supplied to the semiconductor optical switch element S of one semiconductor optical device Ua and the semiconductor optical switch elements S of the other six semiconductor optical devices Ub from the outside on the lower surface side of the semi-insulating semiconductor substrate 1. When the light is made incident through the window 16, the seven semiconductor optical switch elements S can be brought into an ON state in which light is emitted from them as output light L2.

At this time, the six semiconductor optical devices U
The six output lights L2 obtained from the semiconductor optical switch element S of b are made incident on the semiconductor light receiving element R of one semiconductor optical device Ua via the reflection film 2, and the semiconductor light receiving element R of the semiconductor optical device Ua It can be made to have a low resistance at both ends.

Therefore, most of the current flowing through the semiconductor optical switch element S of the semiconductor optical device Ua is passed through the semiconductor light receiving element R of the semiconductor optical device Ua, and thus the semiconductor optical switch element S of the semiconductor optical device Ua. It is possible to make the current that has been flowing up to now a sufficiently small value or to stop it from flowing, so that the semiconductor optical switch element S of the semiconductor optical device Ua is switched from the ON state to the OFF state in which the output light L2 is not emitted. Can be made

Further, as described above, when the six output lights L2 obtained from the semiconductor optical switch elements S of the six semiconductor optical devices Ub are made incident on the semiconductor light receiving elements R of the semiconductor optical device Ua, the six semiconductors The semiconductor light receiving element R of one semiconductor optical device (referred to as Ub ′) in the optical device Ub receives the light from the semiconductor optical switch element S of the semiconductor optical device Ua and the semiconductor light in the six semiconductor optical devices Ub. Device U
Since only the light from the two semiconductor optical devices Ub adjacent to b'can be made incident substantially, the semiconductor optical device Ub '
The semiconductor optical switching device S can be kept in the ON state, and thus the output light L2 can be kept in a state of being emitted to the outside through the window 15.

From the above, although detailed description is omitted, according to the optical integrated circuit of the present invention shown in FIGS. 1 to 3, a plurality of semiconductor optical devices U are connected to a neural network in a neural network. It can be easily applied to a neural network device as a device that can be put into practical use in a mode corresponding to a processor corresponding to. $ Again

Since it has been described in the section of [Operation / Effect], detailed description is omitted,

The action and effect described in the section [Action and effect] can be obtained.

[0025]

Second Embodiment Next, a second embodiment of the optical integrated circuit device according to the present invention will be described with reference to FIG.

The optical integrated circuit device according to the present invention shown in FIG. 4 is the same as the optical integrated circuit device according to the present invention described with reference to FIGS. 1 to 3 except that the semiconductor layer 2 as a resistance layer is omitted.
Accordingly, the semiconductor layers 3 and 7 forming the semiconductor optical switch element S and the semiconductor optical element R, respectively, are omitted, and the electrode layer 11 formed on the semiconductor layer 2 is also omitted. The semiconductor layer M1 forming the switch element S is connected to the first power supply terminal via the electrode layer 12 formed on the switch element S, the semiconductor layer 36, and then the separate resistor 42. Except for this, the configuration is similar to that described above with reference to FIGS.

Since the optical integrated circuit device according to the present invention having such a configuration has the same configuration as the optical integrated circuit device according to the present invention described above with reference to FIGS. 1 to 3, except for the matters described above, Although detailed description is omitted, the same excellent effects as those of the optical integrated circuit device according to the present invention described above with reference to FIGS. 1 to 3 can be obtained.

In the above description, only a few examples of the present invention are described, and without departing from the spirit of the present invention,
Various modifications and changes could be made.

[Brief description of drawings]

FIG. 1 is a schematic plan view showing a first embodiment of an optical integrated circuit device according to the present invention.

FIG. 2 is a schematic linear enlarged cross-sectional view of each semiconductor optical device showing a first embodiment of the optical integrated circuit device according to the present invention.

FIG. 3 is an electrical equivalent circuit of the first embodiment of the optical integrated circuit device according to the present invention.

FIG. 4 is an enlarged schematic cross-sectional view of each semiconductor optical device showing a second embodiment of the optical integrated circuit device according to the present invention. 1 Semi-insulating semiconductor substrate 2, 3, 7 Semiconductor layer 5, 6, 8, 9, 11, 12 Electrode layer 15 Reflective film 16 Window 20 Insulating layer 31, 32, 33 Wiring layer R Semiconductor light receiving element S Semiconductor optical switch element U semiconductor optical device M1 to M7 semiconductor layer

[Procedure amendment]

[Submission date] January 20, 1992

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Full text

[Correction method] Change

[Correction content]

[Document name] Statement

Title: Optical integrated circuit device

[Claims]

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical integrated circuit device applicable to a neural network device.

[0002]

2. Description of the Related Art Conventionally, an optical integrated circuit device that can be applied to a neural network device has been proposed, but it has not been practically applicable because of its complexity, large size, and large power consumption.

Therefore, the present invention can be easily applied to a neural network system as a practical system.
The purpose is to propose a new optical integrated circuit device.

[0004]

An optical integrated circuit device according to the first invention of the present application is (i) a memory function comprising an optical thyristor on a first main surface of a semi-insulating semiconductor substrate having a light-transmitting property. A plurality of semiconductor optical devices each having a semiconductor optical switch element having a semiconductor light receiving element and a semiconductor light receiving element formed of a phototransistor are formed in a one-dimensional or two-dimensional array, and (ii) the plurality of semiconductor optical devices. An optical thyristor as a semiconductor optical switch element included in each of them has a first semiconductor layer having a first conductivity type as a cathode and a first gate as a first gate on the first main surface of the semi-insulating semiconductor substrate. A second semiconductor layer having a second conductivity type, a third semiconductor layer having a first conductivity type as a second gate, and a fourth semiconductor layer having a second conductivity type as an anode. And those Has a configuration in which a first semiconductor laminate having a structure that is formed by laminating in this order, also,
(Iii) A phototransistor as a semiconductor light receiving element included in each of the plurality of semiconductor optical devices has a fifth main conductivity type as an emitter on a first main surface of the semi-insulating semiconductor substrate. A semiconductor layer, a sixth semiconductor layer having a second conductivity type as a base, and a seventh semiconductor layer having a first conductivity type as a collector are laminated in this order. A second semiconductor laminated body is provided, and further, (iv) in each of the plurality of semiconductor optical devices, a fourth as an anode forming an optical thyristor as the semiconductor optical switch element is provided. The semiconductor layer is connected to a first power source terminal, and the second semiconductor layer as the first gate, which constitutes the optical thyristor as the semiconductor optical switch element, is the semiconductor light receiving element. The first semiconductor layer, which is connected to the seventh semiconductor layer as a collector which constitutes the phototransistor and which constitutes the optical thyristor as the semiconductor optical switching element, is the second power source. A fifth semiconductor layer, which is connected to the end via a resistor and constitutes a phototransistor as the semiconductor light receiving element, is connected to the second power supply end, and (v) is the semi-insulation. First of a conductive semiconductor substrate
A reflective film having a plurality of windows at positions facing the optical thyristor as the semiconductor optical switch element of the plurality of semiconductor optical devices is formed on the second main surface facing the main surface of the semiconductor optical device. Have.

In the optical integrated circuit device according to the second invention of the present application, (i) a semiconductor layer as a resistance layer is formed on the first main surface of a semi-insulating semiconductor substrate having a light-transmitting property, and (Ii) A plurality of semiconductor optical devices having an optical thyristor as a semiconductor optical switch element having a memory function and a phototransistor as a semiconductor light receiving element on the semiconductor layer as the resistance layer are one-dimensional or two-dimensional. In this case, (iii) an optical thyristor as a semiconductor optical switch element included in each of the plurality of semiconductor optical devices is provided on the semiconductor layer as the resistance layer with a first conductive layer as a cathode. Type first semiconductor layer, a second semiconductor layer having a second conductivity type as a first gate, and a third semiconductor having a first conductivity type as a second gate And a fourth semiconductor layer having a second conductivity type as an anode, which is formed by laminating the fourth semiconductor layer in this order, and (iv ) A phototransistor as a semiconductor light receiving element included in each of the plurality of semiconductor optical devices has a fifth semiconductor layer having a first conductivity type as an emitter on a semiconductor layer as the resistance layer and a base as a base. A second semiconductor laminated body having a configuration in which a sixth semiconductor layer having the second conductivity type and a seventh semiconductor layer having the first conductivity type as a collector are laminated in that order. (V)
In each of the plurality of semiconductor optical devices, a fourth semiconductor layer as an anode forming an optical thyristor as the semiconductor optical switching element is connected to a first power source end, The second semiconductor layer as the first gate forming the optical thyristor is connected to the seventh semiconductor layer as the collector forming the phototransistor as the semiconductor light receiving element, and the semiconductor optical switching element is formed. A first semiconductor layer as a cathode which constitutes the optical thyristor as described above is connected to a second power source end through a resistance due to a region between the optical thyristor and the phototransistor of the semiconductor layer as the resistance layer. A fifth semiconductor layer as an emitter constituting the phototransistor as the semiconductor light receiving element is Is connected to the second power supply terminal, also, (vi) above the semi-insulating semiconductor substrate first
A reflective film having a plurality of windows at positions facing the optical thyristor as the semiconductor optical switch element of the plurality of semiconductor optical devices is formed on the second main surface facing the main surface of the semiconductor optical device. Have.

[0006]

According to the optical integrated circuit device of the present invention,
Regarding one semiconductor optical device (generally referred to as Ua) among a plurality of semiconductor optical devices and another semiconductor optical device (which is generally referred to as Ub) arranged around it, Between the first and second power supply terminals, while being connected to a required power supply, light is externally applied to the semiconductor optical switch element of the one semiconductor optical device Ua from the reflection film,
When the semiconductor optical switch element of the one semiconductor optical device Ua is made incident through the facing window, the semiconductor optical switch element of the one semiconductor optical device Ua is brought into an ON state from which light emission is obtained as output light. In addition, the output light obtained from the semiconductor optical switch element of the one semiconductor optical device Ua is reflected by the reflecting film, and a part or all of the semiconductor optical devices in the other semiconductor optical device Ub (this Is generally referred to as Ub ′),
The resistance at both ends of the semiconductor light receiving element of the semiconductor optical device Ub 'can be controlled to a low value.

Therefore, the current flowing through the semiconductor optical switch element of the semiconductor optical device Ub 'can be controlled, and thus the intensity of light obtained from the semiconductor optical switch element of the semiconductor optical device Ub' can be controlled. it can.

Further, in this case, since the required power source for the semiconductor light receiving element formed of the phototransistor can be reliably obtained by taking into consideration the voltage across the resistor, the above-mentioned control can be stably performed.

From the above, according to the optical integrated circuit device of the present invention, a plurality of semiconductor optical devices can be put to practical use as a neural network device in such a manner as to correspond to a processor corresponding to a neuron in a neural network. Can be easily applied as.

[0010]

Embodiment 1 Next, an embodiment of an optical integrated circuit device according to the present invention will be described with reference to FIGS.

The optical integrated circuit device according to the present invention shown in FIGS. 1 to 3 has the following structure.

That is, a plurality of semiconductor optical devices U described later
Has a semi-insulating semiconductor substrate 1 which is made of, for example, InP and has a property of transmitting light obtained from the semiconductor optical switch element S, and on the first main surface 1a of the semi-insulating semiconductor substrate 1. A light-transmitting semiconductor layer 2 is formed as a resistance layer made of, for example, InP having an n-type.

Further, a plurality of semiconductor optical devices U are provided on the semiconductor layer 2 as a resistance layer with one semiconductor optical device U and a center point where the one semiconductor optical device U is arranged as a center. It is formed by arranging so that the other six semiconductor optical devices U are arranged at the six vertex positions of the prism.

In this case, each semiconductor optical device U includes a semiconductor optical switch element S having a memory function, which is an optical thyristor.
And a semiconductor layer M7 as a collector, which is arranged in a ring shape in the vicinity of the semiconductor optical switch element S in the vicinity thereof and which will be described later, has a semiconductor layer M2 as the first gate of the optical thyristor as the semiconductor optical switch element S. And a semiconductor light receiving element R formed of a phototransistor connected to.

In this case, the optical thyristor as the semiconductor optical switch element S of each of the plurality of semiconductor optical devices U is provided on the upper surface of the semi-insulating semiconductor substrate 1, on the semiconductor layer 2 as the resistance layer, and on the electrode layer. An n-type semiconductor layer 3 made of InGaAsP, and a semiconductor layer M1 made of InP having n-type as a cathode;
Of the InGaAsP-based semiconductor layer M2 having the p-type as the gate, the semiconductor layer M3 having the n-type and the InGaAsP-based as the second gate, and the InP having the p-type as the anode And a semiconductor layered structure in which a semiconductor layer 4 of InGaAsP type having p-type as a cap layer is laminated in that order as a cap layer.

Further, a phototransistor as a semiconductor light receiving element R of each of the plurality of semiconductor optical devices U is provided as an electrode layer on the upper surface of the semi-insulating semiconductor substrate 1, on the semiconductor layer 2 as a resistance layer. A semiconductor layer 7 formed similarly at the same time as the above-mentioned semiconductor layer 3, a semiconductor layer M5 having an n-type as an emitter formed at the same time as the above-mentioned semiconductor layer M1, and a semiconductor layer M2 described above.
At the same time, a semiconductor layer M6 having a p-type as a base formed in the same manner, and a semiconductor layer M7 having an n-type as a collector formed at the same time as the above-described semiconductor layer M3.
And a semiconductor laminated body having a structure in which they are laminated in that order.

Further, in each of the plurality of semiconductor optical devices U, the semiconductor layer M4 as an anode constituting the optical thyristor as the semiconductor optical switch element S is
The semiconductor layer 4 as a cap layer, the electrode layer 5 and the wiring layer 32 formed thereon are connected to a first power source end (not shown), and an optical thyristor as a semiconductor optical switch element S is formed. The semiconductor layer M2 serving as the first gate is formed on the semiconductor layer M7 serving as the collector forming the phototransistor serving as the semiconductor light receiving element R, and the electrode layer 6 and the wiring layer 31 formed on the semiconductor layer M2. And the semiconductor layer M1 as a cathode, which is connected via the electrode layer 8 formed on the semiconductor layer M7 and constitutes an optical thyristor as the semiconductor optical switch element S, has a second power source end (not shown). ) To the semiconductor layer 3 as an electrode layer,
A resistor 42 (shown in FIG. 3) between the photothyristor and the phototransistor of the semiconductor layer 2 as a resistance layer.
And the electrode layer 11 formed on the semiconductor layer 2 at the same time as the semiconductor layer 3 and the wiring layer 33, and are connected to each other.
The semiconductor layer M5 as an emitter forming a phototransistor as the semiconductor light receiving element R has an electrode layer 9 and a wiring layer 3 formed on the semiconductor layer M5 at the second power source end.
It is connected through 3.

Further, on the surface facing the upper surface of the semi-insulating semiconductor substrate 1, a reflecting film having a plurality of windows 16 at positions facing the optical thyristors as the semiconductor optical switch elements S of the plurality of semiconductor optical devices U, respectively. 15 is formed.

In FIG. 2, 20 is an insulating film covering the semiconductor optical switch elements S and the semiconductor light receiving elements R of the plurality of semiconductor optical devices U, 21, 22, 23 and 24.
Is a window of the insulating layer 20 exposing the above-mentioned electrode layers 8, 6, 5 and 9 to the outside.

The above is the configuration of the embodiment of the optical integrated circuit according to the present invention.

According to the optical integrated circuit of the present invention having such a configuration, one semiconductor optical device (generally referred to as Ua) among the plurality of semiconductor optical devices U and the semiconductor optical device U are arranged immediately around the semiconductor optical device. Regarding the other six semiconductor optical devices (generally referred to as Ub), a required power source is connected between the first and second power supply terminals (wiring layers 32 and 33) of each semiconductor optical device U. Then, the input light Ll is supplied to the semiconductor optical switch element S of one semiconductor optical device Ua and the semiconductor optical switch elements S of the other six semiconductor optical devices Ub from the outside on the lower surface side of the semi-insulating semiconductor substrate 1. When the light is made incident through the window 16, the seven semiconductor optical switch elements S can be brought into an ON state in which light is emitted from them as the output light L2.

At this time, the six semiconductor optical devices U
Six output lights L2 obtained from the semiconductor optical switch element S of b are made incident on the semiconductor light receiving element R of one semiconductor optical device Ua through the reflection film 15, and the semiconductor light receiving element R of the semiconductor optical device Ua is made to enter. It can be made to have a low resistance at both ends.

Therefore, most of the current flowing in the semiconductor optical switch element S of the semiconductor optical device Ua is made to flow in the semiconductor light receiving element R of the semiconductor optical device Ua, and thus the semiconductor optical switch element S of the semiconductor optical device Ua. It is possible to set the current that has been flowing to the current to a sufficiently small value or not to flow it. Therefore, the semiconductor optical switch element S of the semiconductor optical device Ua is switched from the ON state to the OFF state in which the output light L2 is not emitted. Can be made

Further, as described above, when the six output lights L2 obtained from the semiconductor optical switch elements S of the six semiconductor optical devices Ub are made incident on the semiconductor light receiving element R of the semiconductor optical device Ua, those six semiconductors are used. The light from the semiconductor optical switch element S of the semiconductor optical device Ua and the semiconductor light in the six semiconductor optical devices Ub are input to the semiconductor light receiving element R of one semiconductor optical device (referred to as Ub ′) in the optical device Ub. Device U
Since only the light from the two semiconductor optical devices Ub adjacent to b'can be made incident substantially, the semiconductor optical device Ub '.
The semiconductor optical switch element S can be kept in the ON state, so that the output light L2 can be kept in a state of being emitted to the outside through the window 15.

From the above, although detailed description is omitted, according to the optical integrated circuit of the present invention shown in FIGS. 1 to 3, the plurality of semiconductor optical devices U correspond to neurons in the neural network. The present invention can be easily applied to the neural network device in a manner corresponding to the existing processor as a practical application.

[0026]

Second Embodiment Next, a second embodiment of the optical integrated circuit device according to the present invention will be described with reference to FIG.

The optical integrated circuit device according to the present invention shown in FIG. 4 is the same as the optical integrated circuit device according to the present invention described with reference to FIGS. 1 to 3 except that the semiconductor layer 2 as a resistance layer is omitted.
Accordingly, the semiconductor layers 3 and 7 as the electrode layers respectively constituting the semiconductor optical switch element S and the semiconductor light receiving element R are omitted, and the electrode layer 11 formed on the semiconductor layer 2 is omitted. The semiconductor layer M1 which is omitted and which constitutes the semiconductor optical switching element S has a second power source through the electrode layer 12 and the wiring layer 26 formed thereon, and then through a separate resistor 42. It has the same configuration as described above in FIGS. 1-3 except that it is connected to an end.

The optical integrated circuit device according to the present invention having such a configuration has the same configuration as the optical integrated circuit device according to the present invention described above with reference to FIGS. 1 to 3 except for the matters described above. Although detailed description is omitted, the same excellent effects as those of the optical integrated circuit device according to the present invention described above with reference to FIGS. 1 to 3 can be obtained.

In the above description, only a few examples of the present invention are described, and without departing from the spirit of the present invention,
Various modifications and changes could be made.

[Brief description of drawings]

FIG. 1 is a schematic plan view showing a first embodiment of an optical integrated circuit device according to the present invention.

FIG. 2 is a schematic linear enlarged cross-sectional view of each semiconductor optical device showing a first embodiment of the optical integrated circuit device according to the present invention.

FIG. 3 is an electrical equivalent circuit of the first embodiment of the optical integrated circuit device according to the present invention.

FIG. 4 is an enlarged schematic cross-sectional view of each semiconductor optical device showing a second embodiment of the optical integrated circuit device according to the present invention. DESCRIPTION OF SYMBOLS 1 Semi-insulating semiconductor substrate 1a Main surface 2, 3, 7 Semiconductor layer 5, 6, 8, 9, 11, 12 Electrode layer 15 Reflective film 16 Window 20 Insulating layer 26, 31, 32, 33 Wiring layer R Semiconductor light receiving element S semiconductor optical switch element U semiconductor optical device M1 to M7 semiconductor layer

[Procedure Amendment 2]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 2

[Correction method] Change

[Correction content]

[Fig. 2]

[Procedure 3]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 3

[Correction method] Change

[Correction content]

[Figure 3]

[Procedure amendment 4]

[Document name to be corrected] Drawing

[Name of item to be corrected] Fig. 4

[Correction method] Change

[Correction content]

[Figure 4]

Claims (2)

[Claims] 1. A plurality of semiconductors having a semiconductor optical switch element having a memory function, which is an optical thyristor, and a semiconductor light receiving element, which is a phototransistor, on a first main surface of a translucent semi-insulating semiconductor substrate. An optical device is formed by arranging one-dimensionally or two-dimensionally, and an optical thyristor as a semiconductor optical switch element included in each of the plurality of semiconductor optical devices is the first main surface of the semi-insulating semiconductor substrate. A first semiconductor layer having a first conductivity type as a cathode, a second semiconductor layer having a second conductivity type as a first gate, and a second gate on top. A third semiconductor layer having a first conductivity type as
And a fourth semiconductor layer having a second conductivity type as a card, and a configuration using the first semiconductor laminate having a configuration in which the fourth semiconductor layer is laminated in that order. A phototransistor as a semiconductor light receiving element of each of the above, a fifth semiconductor layer having a first conductivity type as an emitter and a base as a base on the first main surface of the semi-insulating semiconductor substrate. Sixth with second conductivity type
A semiconductor layer and a seventh semiconductor layer having a first conductivity type as a collector are laminated in that order, and a second semiconductor laminate is used. In each of the plurality of semiconductor optical devices, a fourth semiconductor layer as an anode forming an optical thyristor as the semiconductor optical switching element is connected to a first power source end, The second semiconductor layer as the first gate constituting the optical thyristor is connected to the seventh semiconductor layer as the collector constituting the phototransistor as the semiconductor light receiving element, and the semiconductor A first semiconductor layer as a cathode constituting an optical thyristor as an optical switch element is connected to a first power source end via a resistor, and a photo diode as the semiconductor light receiving element is provided. A fifth semiconductor layer as an emitter forming a transistor is connected to the first power supply terminal, and on a second main surface of the semi-insulating semiconductor substrate facing the first main surface, An optical integrated circuit device, wherein a reflective film having a plurality of windows is formed at a position facing an optical thyristor as a semiconductor optical switch element of the plurality of semiconductor optical devices. 2. A memory function comprising an optical thyristor, wherein a semiconductor layer as a resistance layer is formed on a first main surface of a semi-insulating semiconductor substrate having a light-transmitting property, and the semiconductor layer as the resistance layer is provided with an optical thyristor. A plurality of semiconductor optical devices each having a semiconductor optical switch element having a semiconductor photodetector and a semiconductor light receiving element formed of a phototransistor are formed in a one-dimensional or two-dimensional array, and each semiconductor optical device has a semiconductor optical device. An optical thyristor as a switching element has a first semiconductor layer having a first conductivity type as a cathode and a second conductivity type as a first gate on a semiconductor layer as the resistance layer. And a third semiconductor layer having a first conductivity type as a second gate, and a fourth semiconductor layer having a second conductivity type as an anode. Formed by stacking them in that order And a phototransistor as a semiconductor light receiving element included in each of the plurality of semiconductor optical devices, which has a configuration using the first semiconductor laminated body having the above configuration. A fifth semiconductor layer having a first conductivity type, a sixth semiconductor layer having a second conductivity type as a base, and a seventh semiconductor layer having a first conductivity type as a collector Has a configuration using a second semiconductor laminate having a configuration in which they are stacked in that order, and in each of the plurality of semiconductor optical devices, an optical thyristor as the semiconductor optical switch element is configured. The fourth semiconductor layer as an anode is connected to the first power source end, and the second semiconductor as the first gate is included in the optical thyristor as the semiconductor optical switch element. A layer is connected to a seventh semiconductor layer as a collector which constitutes a phototransistor as the semiconductor light receiving element, and a first layer as a cathode which constitutes an optical thyristor as the semiconductor optical switching element.
Of the semiconductor layer is connected to the first power source end via a resistance due to a region between the optical thyristor of the semiconductor layer as the resistance layer and the phototransistor to form a phototransistor as the semiconductor light receiving element. A fifth semiconductor layer as an emitter is connected to the first power source end, and the plurality of semiconductor optical devices are provided on a second main surface of the semi-insulating semiconductor substrate that faces the first main surface. 2. An optical integrated circuit device, comprising: a reflection film having a plurality of windows at a position facing the optical thyristor as the semiconductor optical switch element.