JPH05283354A - Ion implantation method - Google Patents
Ion implantation methodInfo
- Publication number
- JPH05283354A JPH05283354A JP4081215A JP8121592A JPH05283354A JP H05283354 A JPH05283354 A JP H05283354A JP 4081215 A JP4081215 A JP 4081215A JP 8121592 A JP8121592 A JP 8121592A JP H05283354 A JPH05283354 A JP H05283354A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- ion beam
- floating electrode
- ion implantation
- yield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，半導体装置の製造工程
におけるイオン注入方法に関し, 半導体基板と電気的に
分離されたフローティング電極のある状態での不純物の
イオン注入方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation method in a semiconductor device manufacturing process, and more particularly to an impurity ion implantation method in a state where a floating electrode electrically separated from a semiconductor substrate is provided.
【０００２】さらに, 本発明は, イオン注入時のチャー
ジアップ対策として, イオンビームのイオン分布におけ
る最大スポット電流を規格値以下に限定してイオン注入
することで, チャージレベルを常に許容値以下の安定し
た状態とするチャージアップ対策方法に関する。Furthermore, the present invention limits the maximum spot current in the ion distribution of the ion beam to below the standard value as a measure against charge-up during ion implantation, so that the charge level is always stable below the allowable value. It is related to the charge-up countermeasure method that keeps the battery in the charged state.
【０００３】[0003]
【従来の技術】図３は従来例の説明図，図４は平均電荷
密度，及び，最大スポット電流とデバイス歩留である。2. Description of the Related Art FIG. 3 is an explanatory view of a conventional example, and FIG. 4 is an average charge density, maximum spot current and device yield.
【０００４】図において，14は半導体基板, 15は第１の
絶縁膜，16はフローティング電極,17は第２の絶縁膜，1
8は注入イオン, 19は半導体基板, 20は第１の絶縁膜，2
1はフローティング電極, 22は第２の絶縁膜，23は第３
の絶縁膜，24は開口部, 25は注入イオンである。In the figure, 14 is a semiconductor substrate, 15 is a first insulating film, 16 is a floating electrode, 17 is a second insulating film, 1
8 is implanted ions, 19 is a semiconductor substrate, 20 is a first insulating film, 2
1 is a floating electrode, 22 is a second insulating film, and 23 is a third
Is an insulating film, 24 is an opening, and 25 is an implanted ion.
【０００５】従来, イオン注入時のチャージアップ対策
としてのビーム電流の管理方法としては, 図３に示した
異なるデバイス構造にかかわらず，１回のスキャンで半
導体基板に注入されるイオンの電荷密度を12μcoul/cm2
・scan以下としていた。Conventionally, as a method of managing a beam current as a measure for charge-up at the time of ion implantation, the charge density of ions implanted into a semiconductor substrate in one scan is determined regardless of the different device structure shown in FIG. 12 μcoul / cm 2
・ It was below scan.
【０００６】現在, チャージアップによる二酸化シリコ
ン(SiO2)膜劣化を起こす半導体基板中のデバイス構造と
して, 次の二つが挙げられる。一つは, 図３（ａ）で示
した第１の絶縁膜15と第２の絶縁膜16の間に埋め込まれ
たフローティング電極16を有する構造 (デバイスＡと呼
ぶ），もう一つは，図３（ｂ）で示した第３の絶縁膜(2
3)の一部に開口部(24)を形成したフローティング電極21
を有する構造( デバイスＢと呼ぶ）である。At present, there are the following two device structures in a semiconductor substrate that cause deterioration of a silicon dioxide (SiO 2 ) film due to charge-up. One is a structure having a floating electrode 16 embedded between the first insulating film 15 and the second insulating film 16 shown in FIG. 3A (referred to as device A), and the other is the structure shown in FIG. The third insulating film (2
Floating electrode 21 with an opening (24) formed in part of 3)
Is a structure having (referred to as device B).
【０００７】従来の方法は，イオン注入時のイオンビー
ムの供給電流を示す単位時間当たりの平均電荷密度によ
る管理を特徴としている。これは，図３（ａ）に示すよ
うな，フローティング電極16が絶縁膜15,17 内に埋め込
まれている構造のデバイスＡの歩留りが, 図４（ａ）に
示すように，イオン注入時のイオンビームの平均電荷密
度に対してはっきりした相関関係を持つことから，イオ
ン注入時のイオンビームの平均電荷密度の規格化（上限
設定）により，デバイスＡのチャージアップによる特性
劣化を管理する方法の有効性は確認できる。The conventional method is characterized by management by the average charge density per unit time, which indicates the supply current of the ion beam during ion implantation. This is because the yield of the device A having the structure in which the floating electrode 16 is embedded in the insulating films 15 and 17 as shown in FIG. 3A is as shown in FIG. Since there is a clear correlation with the average charge density of the ion beam, a method of managing the characteristic deterioration due to charge-up of the device A by normalizing (setting the upper limit) the average charge density of the ion beam during ion implantation is proposed. The effectiveness can be confirmed.
【０００８】[0008]
【発明が解決しようとする課題】しかし，フローティン
グ電極21上の一部に第３の絶縁膜23の開口部24を持つ構
造のデバイスＢにおいては，図４（ａ）に示すように，
その歩留りがイオン注入時のイオンビームの平均電荷密
度とまったく相関関係がない。However, in the device B having the structure in which the opening 24 of the third insulating film 23 is provided in a part of the floating electrode 21, as shown in FIG.
The yield has no correlation with the average charge density of the ion beam during ion implantation.
【０００９】この様に，平均電荷密度の上限値を決定し
た従来のチャージアップ対策のための管理方法では，デ
バイスＢの構造を有する素子の特性劣化には対処出来な
いため，チャージアップ管理方法としては未だ不十分で
ある。As described above, the conventional management method for the charge-up countermeasure in which the upper limit of the average charge density is determined cannot deal with the characteristic deterioration of the element having the structure of the device B. Is still insufficient.
【００１０】本発明は，以上の問題点を解決するため,
イオイン注入時の半導体基板のチャージレベルを常に許
容値以下の安定した状態とする管理方法を提供すること
を目的とする。In order to solve the above problems, the present invention provides
It is an object of the present invention to provide a management method for keeping the charge level of a semiconductor substrate at the time of ioin injection always in a stable state below an allowable value.
【００１１】[0011]
【課題を解決するための手段】図１は本発明の原理説明
図である。図において，１は半導体基板, ２は第１の絶
縁膜，３はフローティング電極,４は第２の絶縁膜，５
は第３の絶縁膜，６は開口部, ７は注入イオン，８はイ
オンビーム形状，９はピークポイントである。FIG. 1 illustrates the principle of the present invention. In the figure, 1 is a semiconductor substrate, 2 is a first insulating film, 3 is a floating electrode, 4 is a second insulating film, 5
Is a third insulating film, 6 is an opening, 7 is an implanted ion, 8 is an ion beam shape, and 9 is a peak point.
【００１２】図４（ｂ）に示したように，デバイスＢの
構造はイオンビーム内の最大スポット電流と相関関係に
ある。最大スポット電流が２００μＡ／ｃｍ2 を越えて
増えてくると，急激に歩留が低下する。As shown in FIG. 4 (b), the structure of the device B correlates with the maximum spot current in the ion beam. If the maximum spot current increases beyond 200 μA / cm 2 , the yield will suddenly drop.
【００１３】つまり，デバイスＢの歩留の管理は，イオ
ンビーム内の最大スポット電流を規制するのが良い事が
分かる。図１（ｂ）上段左側の平面図において，イオン
注入時のイオンビーム形状８は，やや楕円形をなしてお
り，イオンビームのビーム電流の分布は，その中心付近
にピークポイント９がある。ピークポイントでＹ軸の断
面図を右側に，Ｘ軸の断面図を下側に示す。That is, it is understood that the control of the yield of the device B is to regulate the maximum spot current in the ion beam. In the plan view on the left side of the upper part of FIG. 1B, the ion beam shape 8 at the time of ion implantation is slightly elliptical, and the distribution of the beam current of the ion beam has a peak point 9 near its center. At the peak point, the Y-axis sectional view is shown on the right side, and the X-axis sectional view is shown on the lower side.
【００１４】ここで，最大スポット電流とは，図１
（ｂ）に示すように，イオン密度が高い部分の単位面積
あたりの電流値を意味する。本来なら，イオンビーム内
のスポット電流を完全に全て均一にするのが理想である
が，現状の装置において，それは不可能である。Here, the maximum spot current is as shown in FIG.
As shown in (b), it means a current value per unit area of a portion having a high ion density. Originally, it is ideal that the spot current in the ion beam should be completely uniform, but this is not possible with the current equipment.
【００１５】そこで，スポット電流が全て均一でなくと
も，最大スポット電流を１７５μＡ／ｃｍ2 以下と設定
することで, 前項の図４（ｂ）に示すように，デバイス
Ｂにおいて殆ど１００％ の歩留りが保証され，イオン
注入時の半導体基板のチャージアップ管理が可能である
ことを見出した。Therefore, even if the spot currents are not all uniform, by setting the maximum spot current to 175 μA / cm 2 or less, almost 100% yield can be obtained in the device B as shown in FIG. We have found that it is possible to guarantee the charge-up control of the semiconductor substrate during ion implantation.
【００１６】即ち，本発明の目的は，図１（ａ）に示す
ように，半導体基板１から第１の絶縁膜２によって電気
的に分離されたフローティング電極３を有し, 且つ, 該
フローティング電極３を覆う第２の絶縁膜４を有し, 更
に, 該第２の絶縁膜４を覆って，該フローティング電極
３領域上の一部に開口部６を形成した，第３の絶縁膜５
を有する半導体装置において，イオンビームにて該半導
体基板１内に不純物イオン７を注入する際に, あらかじ
めイオンビームの最大スポット電流と製造歩留りとの相
関関係を求めておき，所定の歩留り以上になるような最
大スポット電流でイオンビームを照射するようにするこ
とにより達成される。That is, an object of the present invention is to have a floating electrode 3 electrically separated from a semiconductor substrate 1 by a first insulating film 2 as shown in FIG. A third insulating film 5 which has a second insulating film 4 which covers the second insulating film 4, and which has an opening 6 formed in a part of the floating electrode 3 region so as to cover the second insulating film 4.
In the semiconductor device having the above, when the impurity ions 7 are implanted into the semiconductor substrate 1 by the ion beam, the correlation between the maximum spot current of the ion beam and the manufacturing yield is obtained in advance, and the yield becomes higher than the predetermined yield. It is achieved by irradiating the ion beam with such a maximum spot current.
【００１７】[0017]
【作用】本発明では, 半導体装置へのイオン注入時にお
いて，イオンビーム内の最大スポット電流を管理（上限
設定）することで, デバイスＢ相当の構造の素子を含む
ＬＳＩ等の半導体装置の歩留り管理が可能となる。According to the present invention, the maximum spot current in the ion beam is controlled (upper limit is set) at the time of ion implantation into the semiconductor device, whereby the yield management of the semiconductor device such as LSI including the element having the structure corresponding to the device B is performed. Is possible.
【００１８】[0018]
【実施例】図２は本発明の一実施例の説明図である。図
において，10はソース, 11はドレイン, 12はゲート電
極, 13はゲート引出電極である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 2 is an explanatory view of an embodiment of the present invention. In the figure, 10 is the source, 11 is the drain, 12 is the gate electrode, and 13 is the gate extraction electrode.
【００１９】デバイスＢの構造の素子を有するＭＯＳの
ＴＥＧ(Test Element Groupe) に,本発明のイオン注入
方法を適用した一実施例について説明する。デバイス条
件は, 図２（ａ）に矢印で範囲を示すように，ゲート引
出電極13であるアンテナ部（面積Ｂ）と，ゲート電極12
（面積Ａ）の面積の比率は２５，アンテナ部のSiO2膜
（フィールドSiO2膜等) の厚さは 4,500Å, ゲート電極
12下部のゲートSiO2膜の厚さは 250Å, ゲート電極12上
の第３の絶縁膜はレジスト膜である。An embodiment in which the ion implantation method of the present invention is applied to a TEG (Test Element Groupe) of MOS having an element of the structure of device B will be described. The device conditions are as shown by the arrow in FIG. 2 (a), and the antenna part (area B) that is the gate extraction electrode 13 and the gate electrode 12
The area ratio of (area A) is 25, the thickness of the SiO 2 film (field SiO 2 film, etc.) in the antenna part is 4,500Å, the gate electrode
The thickness of the lower gate SiO 2 film is 250Å, and the third insulating film on the gate electrode 12 is a resist film.
【００２０】また，イオン注入条件は, 三弗化硼素(B
F3) をイオンソースとして用い，弗化硼素イオン(B
F2 + ) を加速電圧 60KeV, ドーズ量3.5 x1015 ／cm
2 で, イオン注入時のビーム電流７ｍＡにして注入す
る。Ion implantation conditions are boron trifluoride (B
F 3 ) is used as an ion source, and boron fluoride ion (B 3
F 2 + ) acceleration voltage 60 KeV, dose 3.5 x10 15 / cm
At 2 , the beam current at the time of ion implantation is set to 7 mA.
【００２１】この場合の最大スポット電流は図２（ｂ）
に示すように，２５０μＡ／cm2 の条件（１）の場合
と，最大スポット電流１７５μＡ／cm2 の条件（２）の
場合と，装置の調整によりビーム電流の強度を変える
と，ＭＯＳ・ＬＳＩ内ののＴＥＧの歩留は表１のように
変化する。The maximum spot current in this case is shown in FIG.
As shown in the case of 250 .mu.A / cm 2 conditions (1), in the case of the maximum spot current 175μA / cm 2 of the condition (2), changing the intensity of the beam current by adjusting the device, MOS · the LSI The yield of TEG changes as shown in Table 1.
【００２２】[0022]
【表１】 表１で示すように，デバイスＡ構造のＴＥＧでは，最大
スポット電流の値には歩留りが余り関係しないが，デバ
イスＢ構造のＴＥＧでは，最大スポット電流の値が１７
５μＡ／cm2 では歩留が良く, ２５０μＡでは歩留りが
非常に悪い。[Table 1] As shown in Table 1, in the TEG of the device A structure, the yield has little relation to the maximum spot current value, but in the TEG of the device B structure, the maximum spot current value is 17
The yield is good at 5 μA / cm 2 , and the yield is very bad at 250 μA.
【００２３】この結果は図４（ｂ）においても示され，
不純物イオンの種類にかかわりなく，１ｍＡ以上のビー
ム電流にてイオン注入を行う場合には，本発明のよう
に，最大スポット電流の上限値を１７５μＡ／cm2 以下
にすることが必要となる。This result is also shown in FIG. 4 (b),
When performing ion implantation with a beam current of 1 mA or more regardless of the type of impurity ions, it is necessary to set the upper limit of the maximum spot current to 175 μA / cm 2 or less as in the present invention.
【００２４】[0024]
【発明の効果】以上説明したように, 本発明によれば,
イオンビーム内の最大スポット電流を管理する事で，デ
バイスＢ構造の歩留を管理することが可能となる。As described above, according to the present invention,
By controlling the maximum spot current in the ion beam, it becomes possible to control the yield of the device B structure.
【００２５】そして，これから，常に一定したチャージ
レベルで製品を処理することが可能となり，ＬＳＩデバ
イスの信頼性の向上に寄与するところが大きい。From now on, it becomes possible to process the product at a constant charge level, which greatly contributes to the improvement of the reliability of the LSI device.
【図１】 本発明の原理説明図FIG. 1 is an explanatory view of the principle of the present invention.
【図２】 本発明の一実施例の説明図FIG. 2 is an explanatory diagram of an embodiment of the present invention.
【図３】 従来例の説明図FIG. 3 is an explanatory diagram of a conventional example.
【図４】 平均電荷密度及び最大スポット電流とデバイ
ス歩留FIG. 4 Average charge density, maximum spot current and device yield
１ 半導体基板 ２ 第１の絶縁膜 ３ フローティング電極 ４ 第２の絶縁膜 ５ 第３の絶縁膜 ６ 開口部 ７ 注入イオン ８ イオンビーム形状 ９ ピークポイント 10 ソース 11 ドレイン 12 ゲート電極 13 ゲート引出電極 1 Semiconductor Substrate 2 First Insulating Film 3 Floating Electrode 4 Second Insulating Film 5 Third Insulating Film 6 Opening 7 Injected Ion 8 Ion Beam Shape 9 Peak Point 10 Source 11 Drain 12 Gate Electrode 13 Gate Extraction Electrode
Claims (1)
よって電気的に分離されたフローティング電極(3) を有
し, 且つ, 該フローティング電極(3) を覆う第２の絶縁
膜(4) を有し, 更に, 該第２の絶縁膜(4) を覆って，該
フローティング電極(3) 領域上に相当する一部，又は全
部に開口部(6) を形成した第３の絶縁膜(5) を有する半
導体装置において， イオンビームにて該半導体基板(1) 内に不純物イオン
(7) を注入する際に, あらかじめイオンビームの最大ス
ポット電流と製造歩留りとの相関関係を求めておき，所
定の歩留り以上になるような最大スポット電流でイオン
ビームを照射するようにすることを特徴とするイオン注
入方法。1. A second insulating film having a floating electrode (3) electrically separated from a semiconductor substrate (1) by a first insulating film (2) and covering the floating electrode (3). And a third insulating film (4) which covers the second insulating film (4) and has an opening (6) formed in a part or all of the floating electrode (3) region. In a semiconductor device having an insulating film (5), ion beams are used to implant impurity ions in the semiconductor substrate (1).
When implanting (7), the correlation between the maximum spot current of the ion beam and the manufacturing yield should be obtained in advance, and the ion beam should be irradiated at the maximum spot current above the specified yield. Characteristic ion implantation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08121592A JP3175280B2 (en) | 1992-04-03 | 1992-04-03 | Ion implantation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08121592A JP3175280B2 (en) | 1992-04-03 | 1992-04-03 | Ion implantation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05283354A true JPH05283354A (en) | 1993-10-29 |
| JP3175280B2 JP3175280B2 (en) | 2001-06-11 |
Family
ID=13740264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08121592A Expired - Lifetime JP3175280B2 (en) | 1992-04-03 | 1992-04-03 | Ion implantation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3175280B2 (en) |
-
1992
- 1992-04-03 JP JP08121592A patent/JP3175280B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3175280B2 (en) | 2001-06-11 |
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