JPH05267234A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To provide equipment which can remove particles generated by RF etching. CONSTITUTION:This equipment has particle countermeasure electrodes 5 in a direction vertical to an upper RF electrode 2 and a lower RF electrode 3 and is provided with on-off covers 7 to prevent floating of removed particles. This design can prevent redeposit of etched particles onto a wafer and enables elongation of chamber cleaning.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching apparatus, and more particularly to an etching apparatus attached to a film forming apparatus, and more particularly to reducing adhesion of particles generated by RF etching to a wafer.

[0002]

2. Description of the Related Art There is a conventional sputtering apparatus additionally provided with an etching apparatus for etching the wafer surface prior to film formation. An etching apparatus attached to such a film forming apparatus will be described with reference to the drawings.

FIG. 2 is a vertical sectional view of a conventional RF etching apparatus.

Reference numeral 1 is a chamber, 2 is an upper RF electrode, 3 is a lower RF electrode, 4 is a lower electrode cover, and 6 is a wafer. The etching is performed by placing the R on the wafer 6 in parallel.
RF is applied from the F electrodes 2 and 3 and plasma of an inert gas such as argon is generated to etch the wafer surface. The wafer 6 is placed between the upper RF electrode 2 and the lower RF electrode 3 to be etched, and the etched particles are not removed from the chamber but float or are covered with the lower electrode cover. It was supposed to be deposited on top of 4.

[0005]

By the way, in the RF etching apparatus attached to the above-mentioned conventional sputtering apparatus, since the etched particles are deposited on the lower electrode cover, repeated treatments are required. Every time the deposited particles were peeled off and floated in the chamber and were reattached to the wafer, which was one of the causes of a decrease in yield.

Further, as a method of removing the particles, there is a drawback that the equipment has to be stopped in order to replace the lower electrode cover on which the particles are deposited and clean the inside of the chamber, which lowers the processing capacity. It was

Particularly, in the case of an etching apparatus attached to a sputtering film forming apparatus, after etching, the film is transferred to the sputtering chamber without being taken out, and a film is formed. It was a particular problem.

[0008]

In order to solve the above problems, the present invention provides an RF etching apparatus with an RF etching electrode and another electrode in a direction perpendicular to the RF etching electrode. It is characterized by being present.

[0009]

According to the above construction, even if the particles floating in the chamber cannot be removed to the outside of the chamber, another electrode arranged in the vertical direction electrostatically temporarily RFs them. It is possible to remove particles from between the electrode and the wafer and prevent reattachment to the wafer.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view of an RF etching apparatus attached to a sputtering apparatus according to an embodiment of the present invention. In the figure, 5 is a particle countermeasure electrode, and 7 is an openable / closable cover. Other conventional examples The same parts as those in FIG. According to this embodiment, particles that were conventionally deposited on the lower electrode cover 4 by RF etching are applied to the particle electrode 5 before applying the voltage to the RF electrodes 2 and 3. The particles between the RF electrodes 2 and 3 can be temporarily removed in one direction. In order to prevent the particles removed in one direction from floating, an openable cover 7 is provided on the particle countermeasure electrode 5 so that the cover 7 is opened only when a voltage is applied.

Further, in order to prevent reattachment of particles to the wafer 6, the lower electrode cover 4 must be replaced and the inside of the chamber 1 must be cleaned. However, this has the advantage that the cleaning frequency can be extended. There is also.

[0013]

As described above, according to the present invention, the RF
Since the particle countermeasure electrode is provided in the etching chamber, it is possible to remove particles temporarily and prevent re-adhesion to the wafer.

[Brief description of drawings]

FIG. 1 shows an R having a particle countermeasure electrode of the present invention.
It is sectional drawing of F etch chamber.

FIG. 2 is a conventional RF etch chamber.

[Explanation of symbols]

 1 RF Etching Chamber 2 Upper RF Electrode 3 Lower RF Electrode 4 Lower Electrode Cover 5 Particle Counter Electrode 6 Wafer 7 Openable Cover

Claims (4)

[Claims] 1. An etching apparatus for etching a wafer by placing a wafer between electrodes arranged in parallel, the semiconductor manufacturing apparatus having an electrode for collecting particles generated by the etching. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the electrode for collecting the particles is provided with an openable / closable cover. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the etching apparatus is attached to a film forming apparatus. 4. The semiconductor manufacturing apparatus according to claim 3, wherein the film forming apparatus is a sputtering apparatus.