JPH05259068A - Patterning method - Google Patents
Patterning methodInfo
- Publication number
- JPH05259068A JPH05259068A JP4053771A JP5377192A JPH05259068A JP H05259068 A JPH05259068 A JP H05259068A JP 4053771 A JP4053771 A JP 4053771A JP 5377192 A JP5377192 A JP 5377192A JP H05259068 A JPH05259068 A JP H05259068A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer resist
- pattern
- poly
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体集積回路の形成
のための微細パターニング方法に関する。本発明は、特
に、電子線露光によるパターニング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine patterning method for forming a semiconductor integrated circuit. The present invention particularly relates to a patterning method by electron beam exposure.
【０００２】[0002]
【従来の技術】半導体集積回路の形成には薄膜形成技術
と写真蝕刻技術（フォトタソグラフィもしくは電子線リ
ソグラフィ）が多用されており、これらの技術の進歩に
よって、半導体単位素子は益々微細化されて、ＬＳＩや
ＶＬＳＩのような集積回路の実用化がなされている。従
来の半導体集積回路の形成においては、電子線露光によ
るパターニングは、レジストを塗布し、露光し、現像す
るによってパターンを得るという単層のレジストによっ
てパターニングを行っていた。2. Description of the Related Art A thin film forming technique and a photo-etching technique (photolithography or electron beam lithography) are frequently used for forming a semiconductor integrated circuit. With the progress of these techniques, a semiconductor unit element is further miniaturized. Practical applications of integrated circuits such as LSI and VLSI have been made. In the conventional formation of a semiconductor integrated circuit, patterning by electron beam exposure has been carried out by a single layer resist in which a resist is applied, exposed and developed to obtain a pattern.
【０００３】[0003]
【発明が解決しようとする課題】ところが、電子線露光
では、電子の基板面における二次電子の発生すなわちバ
ックスキャッターにより、パターン形状が逆テーパー状
になったり、あるいは大きなパターンに近隣したパター
ンが設計形状よりも太るという問題（近隣効果）があ
る。However, in electron beam exposure, the pattern shape becomes an inverse taper due to generation of secondary electrons on the substrate surface of electrons, that is, backscatter, or a pattern adjacent to a large pattern is generated. There is a problem of being thicker than the design shape (neighborhood effect).
【０００４】かかる問題を解決するために、Ｓｉ含有レ
ジストを上層レジストとして用いる二層レジスト法が試
みられているが、レジストとして実用可能なものが未だ
得られておらず、またこの方法では下層レジストのパタ
ーン形成に際してエッチング装置が必要であり、コスト
が高くなるという問題がある。In order to solve such a problem, a two-layer resist method using a Si-containing resist as an upper layer resist has been tried, but a practical resist has not yet been obtained, and in this method, a lower layer resist is used. There is a problem that an etching apparatus is required for forming the pattern and the cost is increased.
【０００５】従って、本発明は、二層レジストの上層レ
ジストを電子線露光により確実にパターニングすること
ができ、従ってバックスキャッターによる影響がなく、
高い解像度が得られるパターニング方法を提供すること
を目的とする。Therefore, according to the present invention, the upper layer resist of the two-layer resist can be reliably patterned by electron beam exposure, and therefore there is no influence of the back scatter,
An object of the present invention is to provide a patterning method capable of obtaining high resolution.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記課題を解
決するため、下層レジストとしてポジ型のdeepＵＶレジ
ストを塗布し、その上にポリジメチルベンジルメタクリ
レート、ポリt-ブチルビニルフェノキシホルメートおよ
びポリt-ブチルビニルベンゾエートから選ばれる少なく
とも１種と露光により酸を発生する物質との混合物を上
層レジストとして塗布し、まず電子ビームを選択的に照
射し、加熱し、次いで現像して上層レジストをパターニ
ングした後、deepＵＶ光により露光し、次いで現像する
ことを特徴とするパターニング方法を提供する。In order to solve the above problems, the present invention applies a positive type deep UV resist as a lower layer resist, on which polydimethylbenzyl methacrylate, poly t-butyl vinylphenoxy formate and poly A mixture of at least one selected from t-butyl vinyl benzoate and a substance that generates an acid upon exposure is applied as an upper layer resist, which is first selectively irradiated with an electron beam, heated, and then developed to pattern the upper layer resist. After that, a patterning method is provided, which comprises exposing with deep UV light and then developing.
【０００７】本発明において上層レジストとして用いら
れるポリジメチルベンジルメタクリレート、ポリt-ブチ
ルビニルフェノキシホルメートおよびポリt-ブチルビニ
ルベンゾエートは、それぞれ下記式で表すことができ
る。The polydimethylbenzyl methacrylate, poly t-butyl vinyl phenoxyformate and poly t-butyl vinyl benzoate used as the upper layer resist in the present invention can be represented by the following formulas, respectively.
【０００８】ポリジメチルベンジルメタクリレートPolydimethylbenzyl methacrylate
【化１】 [Chemical 1]
【０００９】ポリt-ブチルビニルフェノキシホルメートPoly t-butyl vinyl phenoxy formate
【化２】 [Chemical 2]
【００１０】ポリt-ブチルビニルベンゾエートPoly t-butyl vinyl benzoate
【化３】 [Chemical 3]
【００１１】また、下層レジストとして有用なポジ型の
deepＵＶレジストの典型的な例としては、ポリメチルメ
タクリレートや、メタクリル酸、メチルメタクリレート
／メタクリル酸クロライドの共重合体およびα−メチル
スチレンとα−クロロメチルアクリレートの共重合体を
挙げることができる。A positive type resist useful as a lower layer resist
Typical examples of deep UV resists include polymethylmethacrylate, methacrylic acid, copolymers of methylmethacrylate / methacrylic acid chloride, and copolymers of α-methylstyrene and α-chloromethylacrylate.
【００１２】本発明方法の実施に際しては、図１に示す
如く、基板１上に下層レジスト２としてdeepＵＶポジレ
ジストを塗布し、その上に上層レジスト３としてポリジ
メチルベンジルメタクリレート、ポリt-ブチルビニルフ
ェノキシホルメートおよびポリt-ブチルビニルベンゾエ
ートから選ばれる少なくとも１種と酸発生剤（ＰＡＧ）
の混合物を塗布する（図１イ）。次に、上層を電子線に
より露光し、加熱し、現像してパターニングする（図１
ロ）。そして、この上層レジストパターンをマスクとし
て下層をdeepＵＶ光で露光し、現像して、上層パターン
を下層に転写する（図１ハ）。ここで、酸発生剤は特に
限定されるものではなく、公知のものを使用することが
できる。In carrying out the method of the present invention, as shown in FIG. 1, a deep UV positive resist is applied as a lower layer resist 2 on a substrate 1, and polydimethylbenzyl methacrylate or poly t-butyl vinylphenoxy is used as an upper layer resist 3 thereon. At least one selected from formate and poly t-butyl vinyl benzoate and an acid generator (PAG)
Is applied (FIG. 1A). Next, the upper layer is exposed to an electron beam, heated, developed and patterned (FIG. 1).
B). Then, using the upper layer resist pattern as a mask, the lower layer is exposed to deep UV light and developed to transfer the upper layer pattern to the lower layer (FIG. 1C). Here, the acid generator is not particularly limited, and known ones can be used.
【００１３】[0013]
【作用】上層レジストとして、例えば、ポリジメチルベ
ンジルメタクリレートを用いた場合、上層を電子線によ
り露光し、次いで加熱すると、以下の反応が起こる。When polydimethylbenzyl methacrylate is used as the upper layer resist, the following reaction occurs when the upper layer is exposed to an electron beam and then heated.
【００１４】[0014]
【化４】 [Chemical 4]
【００１５】すなわち、ＰＡＧが電子線露光により酸
（Ｈ+ ) を発生し、加熱時にこの酸の作用によりポリジ
メチルベンジルメタクリレートが上記のように分解する
ので、上層レジストのアルカリ現像によりパターンを形
成することが可能となる。しかして、残留してパターン
を形成しているポリジメチルベンジルメタクリレート中
にはベンゼン環が存在しており、従ってdeepＵＶ光を吸
収するので、これをマスクとしてdeepＵＶ光で露光し、
現像することにより上記パターンを下層レジストに転写
できるのである。That is, PAG generates an acid (H + ) by electron beam exposure, and the polydimethylbenzyl methacrylate is decomposed as described above by the action of this acid when heated, so that a pattern is formed by alkali development of the upper layer resist. It becomes possible. Then, since the benzene ring is present in the remaining polydimethylbenzyl methacrylate forming the pattern and therefore absorbs deep UV light, it is exposed as deep UV light using this as a mask.
By developing, the above pattern can be transferred to the lower layer resist.
【００１６】[0016]
【実施例】以下、実施例により、本発明をさらに説明す
る。実施例１ Ｓｉウエハ上に、下層レジストとしてメチルメタクリレ
ート／メタクリル酸／メタクリル酸クロライド共重合体
を塗布し、 180℃でプリベークする。その上にポリジメ
チルベンジルメタクリレートとベンゾイントシレートの
混合物を塗布し、電子線露光（約１０μＣ／cm2)し、 1
00℃で１分間加熱した。この後、アルカリ水溶液で現像
した。EXAMPLES The present invention will be further described below with reference to examples. Example 1 A methyl methacrylate / methacrylic acid / methacrylic acid chloride copolymer is applied as a lower layer resist on a Si wafer and prebaked at 180 ° C. A mixture of polydimethylbenzyl methacrylate and benzoin tosylate was applied on it, and electron beam exposure (about 10 μC / cm 2 ) was performed.
Heated at 00 ° C for 1 minute. After that, development was performed with an alkaline aqueous solution.
【００１７】次に、Ｘｅ−Ｈｇ光でフラッド露光（約５
分）し、酢酸エチルとメチルイソブチルケトン（１：
１）の溶液で現像した。これにより、約 0.5μｍのパタ
ーニングができ、バックスキャッターの影響は認められ
なかった。Next, flood exposure (about 5 times) with Xe-Hg light is performed.
And ethyl acetate and methyl isobutyl ketone (1:
It was developed with the solution of 1). As a result, patterning of about 0.5 μm was possible, and no influence of backscatter was observed.
【００１８】実施例２ 下層レジストとしてα−メチルスチレン／メチルα−ク
ロロアクリレート共重合体を用いて、実施例１に述べた
操作を繰り返した。これにより、実施例１と同様な結果
が得られた。 Example 2 The procedure described in Example 1 was repeated using an α-methylstyrene / methyl α-chloroacrylate copolymer as the lower resist. As a result, the same results as in Example 1 were obtained.
【００１９】[0019]
【発明の効果】本発明の方法によれば、バックスキャッ
ターによる影響がなく、高い解像度をもってパターニン
グを行うことができる。According to the method of the present invention, patterning can be performed with high resolution without being affected by the back scatter.
【図１】本発明の方法を、その工程に沿って説明するた
めの模式図である。FIG. 1 is a schematic diagram for explaining the method of the present invention along with its steps.
１…基板 ２…下層レジスト ３…上層レジスト 1 ... Substrate 2 ... Lower layer resist 3 ... Upper layer resist
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｇ０３Ｆ 7/20 ５２１ 7818−2Ｈ 7352−4Ｍ Ｈ０１Ｌ 21/30 ３６１ Ｑ ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 5 Identification code Office reference number FI Technical display location G03F 7/20 521 7818-2H 7352-4M H01L 21/30 361 Q
Claims (4)
ジストを塗布し、その上にポリジメチルベンジルメタク
リレート、ポリt-ブチルビニルフェノキシホルメートお
よびポリt-ブチルビニルベンゾエートから選ばれる少な
くとも１種と露光により酸を発生する物質との混合物を
上層レジストとして塗布し、まず電子ビームを選択的に
照射し、加熱し、次いで現像して上層レジストをパター
ニングした後、deepＵＶ光により露光し、次いで現像す
ることを特徴とするパターニング方法。1. A positive type deep UV resist is applied as a lower layer resist, and at least one selected from polydimethylbenzyl methacrylate, poly t-butyl vinyl phenoxyformate and poly t-butyl vinyl benzoate and an acid by exposure. Characterized in that a mixture with a substance that generates is coated as an upper layer resist, first selectively irradiated with an electron beam, heated, and then developed to pattern the upper layer resist, then exposed by deep UV light, and then developed. And a patterning method.
トである、請求項１記載の方法。2. The method of claim 1, wherein the lower layer resist is polymethylmethacrylate.
タクリレート／メタクリル酸クロライドの共重合体であ
る、請求項１記載の方法。3. The method according to claim 1, wherein the lower layer resist is a copolymer of methacrylic acid and methyl methacrylate / methacrylic acid chloride.
−クロロメチルアクリレートの共重合体である、請求項
１記載の方法。4. The lower layer resist is α-methylstyrene and α
A method according to claim 1 which is a copolymer of chloromethyl acrylate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4053771A JPH05259068A (en) | 1992-03-12 | 1992-03-12 | Patterning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4053771A JPH05259068A (en) | 1992-03-12 | 1992-03-12 | Patterning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05259068A true JPH05259068A (en) | 1993-10-08 |
Family
ID=12952084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4053771A Withdrawn JPH05259068A (en) | 1992-03-12 | 1992-03-12 | Patterning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05259068A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10613268B1 (en) * | 2017-03-07 | 2020-04-07 | Facebook Technologies, Llc | High refractive index gratings for waveguide displays manufactured by self-aligned stacked process |
-
1992
- 1992-03-12 JP JP4053771A patent/JPH05259068A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10613268B1 (en) * | 2017-03-07 | 2020-04-07 | Facebook Technologies, Llc | High refractive index gratings for waveguide displays manufactured by self-aligned stacked process |
| US11249242B1 (en) | 2017-03-07 | 2022-02-15 | Facebook Technologies, Llc | High refractive index gratings for waveguide displays manufactured by self-aligned stacked process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990518 |