JPH0525439A - Die-bonding sheet - Google Patents
Die-bonding sheetInfo
- Publication number
- JPH0525439A JPH0525439A JP20497291A JP20497291A JPH0525439A JP H0525439 A JPH0525439 A JP H0525439A JP 20497291 A JP20497291 A JP 20497291A JP 20497291 A JP20497291 A JP 20497291A JP H0525439 A JPH0525439 A JP H0525439A
- Authority
- JP
- Japan
- Prior art keywords
- die
- adhesive layer
- bonding sheet
- thermosetting
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83885—Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体チップを電極部
材に固着するためのダイボンド用シートに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a die-bonding sheet for fixing a semiconductor chip to an electrode member.
【０００２】[0002]
【従来の技術】従来、半導体装置の製造過程においてリ
ードフレームやステム等の電極部材への半導体チップの
固着には、銀ペースト等のペーストが用いられていた。
固着処理は、リードフレームのダイパッド等の上にペー
ストを塗工し、それに半導体チップを搭載してペースト
層を硬化させることにより行われる。2. Description of the Related Art Conventionally, a paste such as a silver paste has been used to fix a semiconductor chip to an electrode member such as a lead frame or a stem in the process of manufacturing a semiconductor device.
The fixing process is performed by applying a paste on a die pad or the like of a lead frame, mounting a semiconductor chip on the paste, and curing the paste layer.
【０００３】しかしながら、ペーストの粘度変動や劣化
等で塗工量や塗工形状等のバラツキが大きく、形成され
るペースト厚が不均一で半導体チップの固着強度の信頼
性に乏しい問題点があつた。すなわち、ペーストの塗工
不足で半導体チップと電極部材との固着強度が低いと後
続のワイヤーボンディング工程で半導体チップが剥離す
る問題を生じ、反対にペーストの塗工量が多すぎると半
導体チップの上にまでペーストが流延して特性不良を発
生し、歩留まりや信頼性を低下させ、かかる問題が半導
体チップの大型化に伴って特に顕著なものとなってい
る。そのため、ペースト塗工量の制御を頻繁に行う必要
があって作業性や生産性に支障する問題ともなってい
る。However, there have been problems that the coating amount and the coating shape vary greatly due to viscosity fluctuations and deterioration of the paste, the formed paste thickness is uneven, and the reliability of the fixing strength of the semiconductor chip is poor. . That is, if the adhesion strength between the semiconductor chip and the electrode member is low due to insufficient coating of the paste, the semiconductor chip may peel off in the subsequent wire bonding step, and if the coating amount of the paste is too large, the semiconductor chip may not be removed. In particular, the paste is cast to cause characteristic defects, which lowers the yield and reliability, and such a problem becomes more remarkable as the semiconductor chip becomes larger. Therefore, it is necessary to frequently control the amount of paste applied, which is a problem that hinders workability and productivity.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、接着シート
によれば電極部材上に厚さ等の均一性に優れる接着剤層
を付与できて上記の問題を克服できることに鑑み、その
接着シート方式を満足させつつ、取扱に支障のない強度
を有して常温等の低温で電極部材に固定できると共に、
その固定状態で電極部材を積み重ねて常温等で保管して
も移着したり、電極部材間で接着したりせず、しかも高
温・高圧を要することなく半導体チップを固着処理でき
て、後続のワイヤーボンディング接続や樹脂モールド封
止等の処理に耐える耐熱性を有するダイボンド用の接着
シートの開発を課題とする。DISCLOSURE OF THE INVENTION In view of the fact that an adhesive sheet according to the present invention can provide an adhesive layer having excellent uniformity in thickness and the like on an electrode member and can overcome the above problems, the adhesive sheet method While satisfying the requirements, it has strength that does not hinder handling and can be fixed to the electrode member at low temperature such as room temperature.
Even if the electrode members are stacked in this fixed state and stored at room temperature, they will not be transferred or bonded between the electrode members, and the semiconductor chips can be fixed without requiring high temperature and high pressure. It is an issue to develop an adhesive sheet for die bonding, which has heat resistance to withstand processing such as bonding connection and resin mold sealing.
【０００５】[0005]
【課題を解決するための手段】本発明は、ガラス転移点
が８０℃以上の熱可塑性樹脂と熱硬化性樹脂を成分とす
るポリマーアロイ型接着剤からなると共に、６０℃以下
の温度で実質的な粘着性を示さないフィルムに、６０℃
以下の温度で粘着性を示す熱硬化性接着剤からなる仮着
型接着層を設けたことを特徴とするダイボンド用シート
を提供するものである。The present invention comprises a polymer alloy type adhesive containing a thermoplastic resin having a glass transition point of 80 ° C. or more and a thermosetting resin as components, and substantially at a temperature of 60 ° C. or less. 60 ° C on a film that does not show excellent adhesiveness
It is intended to provide a die-bonding sheet, which is provided with a temporary adhesion type adhesive layer made of a thermosetting adhesive exhibiting tackiness at the following temperatures.
【０００６】[0006]
【作用】上記の構成により、厚さや形状等の均一性に優
れる接着シート方式を満足させつつ、ワイヤーボンディ
ング接続や樹脂モールド封止等の処理に耐える耐熱性を
有して取扱に支障のない強度を有する熱硬化型の接着シ
ートとすることができる。しかも仮着型接着層により常
温等の低温で電極部材に固定できて、加熱処理によるＢ
ステージ化の進行等で品質制御が困難化することを回避
でき、固定状態下に電極部材を積み重ねて常温等で保管
しても移着問題や電極部材間での接着問題を発生せず、
しかも高温・高圧を要することなく半導体チップを固着
できてダイボンド処理を達成することができる。With the above construction, while satisfying the adhesive sheet method which is excellent in uniformity of thickness and shape, it has heat resistance that can withstand processing such as wire bonding connection and resin mold sealing, and strength that does not hinder handling. A thermosetting adhesive sheet having Moreover, it can be fixed to the electrode member at a low temperature such as room temperature by the temporary adhesion type adhesive layer,
It is possible to avoid difficulty in quality control due to the progress of stages, etc., even if the electrode members are stacked under a fixed state and stored at room temperature etc., there is no transfer problem or adhesion problem between electrode members,
Moreover, it is possible to fix the semiconductor chip without the need for high temperature and high pressure, and to achieve die bond processing.
【０００７】[0007]
【実施例】本発明のダイボンド用シートを図１に例示し
た。１がベースとなるフィルム（ポリマーアロイ型接着
剤）、２が仮着型接着層である。図１では長尺体を示し
たが、リードフレームやステム等の電極部材に適用する
に際しては、例えば例示の長尺体を切断するなどして半
導体チップに対応した所定の寸法ないし形状に成形され
る。EXAMPLES The die-bonding sheet of the present invention is illustrated in FIG. Reference numeral 1 is a base film (polymer alloy type adhesive), and 2 is a temporary adhesion type adhesive layer. Although the elongated body is shown in FIG. 1, when it is applied to an electrode member such as a lead frame or a stem, it is formed into a predetermined size or shape corresponding to a semiconductor chip, for example, by cutting the exemplified elongated body. It
【０００８】ベースとなるフィルムは、ガラス転移点が
８０℃以上の熱可塑性樹脂と熱硬化性樹脂を成分とする
ポリマーアロイ型接着剤を用いて、６０℃以下の温度で
は実質的な粘着性を示さないように形成される。フィル
ム厚は１〜１００μmが一般的であるが、これに限定さ
れない。The base film uses a polymer alloy type adhesive containing a thermoplastic resin having a glass transition point of 80 ° C. or higher and a thermosetting resin as components, and exhibits substantial tackiness at a temperature of 60 ° C. or lower. Formed as not shown. The film thickness is generally 1 to 100 μm, but is not limited to this.
【０００９】前記のポリマーアロイ型接着剤の調製に用
いられる、ガラス転移点が８０℃以上の熱可塑性樹脂と
しては、例えばポリイミド系樹脂、ポリスルホン系樹
脂、ポリエーテルスルホン系樹脂、フェノキシ系樹脂、
ポリアミド系樹脂、アクリル系樹脂などがあげられる。Examples of the thermoplastic resin having a glass transition point of 80 ° C. or higher used for preparing the above-mentioned polymer alloy type adhesive include polyimide resin, polysulfone resin, polyether sulfone resin, phenoxy resin,
Examples include polyamide resins and acrylic resins.
【００１０】一方、熱硬化性樹脂としては、例えばエポ
キシ系樹脂、フェノール系樹脂、マレイミド系樹脂、シ
リコーン系樹脂などがあげられる。熱硬化性樹脂の配合
割合は、要求される耐熱性や強度などに応じて適宜に決
定されるが、一般には熱可塑性樹脂１００重量部あた
り、１０〜５００重量部とされる。On the other hand, examples of the thermosetting resin include epoxy resins, phenol resins, maleimide resins and silicone resins. The mixing ratio of the thermosetting resin is appropriately determined according to the required heat resistance, strength, etc., but is generally 10 to 500 parts by weight per 100 parts by weight of the thermoplastic resin.
【００１１】本発明のダイボンド用シートは、前記した
ベースとなるフィルム（１）に、６０℃以下の温度で粘
着性を示す熱硬化性接着剤からなる仮着型接着層（２）
を設けたものである。仮着型接着層の厚さは１〜１００
μmが一般的であるが、これに限定されない。The die-bonding sheet of the present invention comprises a temporary adhesion type adhesive layer (2) made of a thermosetting adhesive which exhibits tackiness at a temperature of 60 ° C. or lower on the above-mentioned base film (1).
Is provided. The thickness of the temporary adhesive layer is 1 to 100
μm is common, but not limited to this.
【００１２】仮着型接着層の形成は例えば、エポキシ系
樹脂、フェノール系樹脂、ポリイミド系樹脂、マレイミ
ド系樹脂、シリコーン系樹脂の如き熱硬化性樹脂をＢス
テージ状態とする方式、熱硬化性樹脂にカルボキシル基
やヒドロキシル基の如き架橋用官能基を導入した粘着性
物質と、必要に応じて架橋剤を配合した粘着性接着剤を
用いる方式などにより行うことができる。The temporary adhesion type adhesive layer is formed by, for example, a method in which a thermosetting resin such as an epoxy resin, a phenol resin, a polyimide resin, a maleimide resin, or a silicone resin is in a B stage state, a thermosetting resin. It can be carried out by a method of using an adhesive substance in which a crosslinking functional group such as a carboxyl group or a hydroxyl group is introduced, and an adhesive adhesive containing a crosslinking agent if necessary.
【００１３】前記の粘着性物質としては例えば、ＮＢＲ
やアクリル系ポリマーの如き粘着剤形成用ポリマー、ロ
ジン系樹脂やテルペン系樹脂の如き粘着性付与樹脂など
があげられる。なお、粘着性接着剤を用いる方式におい
ても必要に応じてＢステージ状態に半硬化される。Examples of the above-mentioned adhesive substance include NBR
Examples thereof include tackifier-forming polymers such as and acrylic polymers, tackifying resins such as rosin resins and terpene resins. Incidentally, even in the system using the tacky adhesive, it is semi-cured to the B stage state if necessary.
【００１４】本発明のダイボンド用シートにおいては、
ベースとなるフィルム又は／及び仮着型接着層の中に、
例えばアルミニウム、銅、銀、金、パラジウム、カーボ
ンの如き導電性物質からなる粉末を含有させて、導電性
を付与したり、熱伝導性を高めてもよい。熱伝導性の向
上は、例えばアルミナ、シリカ、窒化ケイ素などの粉末
を含有させることによっても行うことができる。In the die-bonding sheet of the present invention,
In the base film or / and the temporary adhesion type adhesive layer,
For example, a powder made of a conductive substance such as aluminum, copper, silver, gold, palladium, or carbon may be contained to impart conductivity or enhance thermal conductivity. The thermal conductivity can also be improved by including powders of alumina, silica, silicon nitride and the like.
【００１５】本発明のダイボンド用シートを用いての半
導体チップの固着処理は、例えば次のようにして行うこ
とができる。すなわち、ダイボンド用シートをリール等
に長尺の状態で巻回したリボンとして供給しつつ、それ
を適宜なカッターを介して順次所定の寸法（長さや形状
等）に切断する。これにより、その切断片を介して厚さ
や量の一定性に優れる接着剤層を形成することができ
る。The fixing process of the semiconductor chip using the die-bonding sheet of the present invention can be performed, for example, as follows. That is, while the die-bonding sheet is supplied as a ribbon wound in a long state on a reel or the like, it is sequentially cut into a predetermined size (length, shape, etc.) through an appropriate cutter. This makes it possible to form an adhesive layer having excellent thickness and quantity uniformity through the cut pieces.
【００１６】次に、形成された切断片は電極部材、例え
ばリードフレームのダイパッド上に仮着型接着層（２）
を介して仮接着され、その上に半導体チップを載せてポ
リマーアロイ型接着剤における熱可塑性樹脂の軟化点以
上の温度に加熱し、切断片の溶融下に接着させる。加熱
処理は、例えばヒーター、超音波、紫外線などの適宜な
方式で行ってよい。なお、前記の溶着を達成した切断片
は、加熱処理による熱硬化性樹脂の硬化と、その後の冷
却による熱可塑性樹脂の固化を介して半導体チップを電
極部材に固着する。Next, the cut pieces thus formed are temporarily attached to the electrode member, for example, the die pad of the lead frame (2).
And the semiconductor chip is placed thereon and heated to a temperature equal to or higher than the softening point of the thermoplastic resin in the polymer alloy type adhesive to bond the cut pieces under melting. The heat treatment may be performed by an appropriate method such as a heater, ultrasonic waves, or ultraviolet rays. The cut piece that has achieved the above-mentioned welding fixes the semiconductor chip to the electrode member through hardening of the thermosetting resin by heat treatment and subsequent solidification of the thermoplastic resin.
【００１７】図２にリードフレーム上に半導体チップを
固着したものを例示した。３がダイボンド用シートない
しその切断片、４がリードフレーム、５がダイパッド、
６が半導体チップである。なお電極部材に固着された半
導体チップ（６）は必要に応じて、ワイヤボンディング
処理や樹脂モールド等の後続工程に供給される。FIG. 2 shows an example in which a semiconductor chip is fixed on a lead frame. 3 is a die-bonding sheet or a cut piece thereof, 4 is a lead frame, 5 is a die pad,
6 is a semiconductor chip. The semiconductor chip (6) fixed to the electrode member is supplied to subsequent steps such as wire bonding processing and resin molding as needed.
【００１８】実施例１
ポリエーテルイミド／ビスフェノールＡ型エポキシ樹脂
（エポキシ当量１８５）／ノボラック型フェノール樹脂
（軟化点７５℃）／２−メチルイミダゾールを、１００
／５０／３０／０.５の重量比で配合してなるジメチル
アセトアミド溶液を、ポリエステルフィルムからなるセ
パレータの上に塗布し、１３０℃で１０分間、０.５mmH
gの減圧下に加熱して厚さ２０μmのベースフィルム層を
形成した。Example 1 Polyetherimide / bisphenol A type epoxy resin (epoxy equivalent 185) / novolak type phenol resin (softening point 75 ° C.) / 2-methylimidazole was added to 100 parts.
The dimethylacetamide solution, which is mixed in a weight ratio of /50/30/0.5, is applied on a separator made of a polyester film, and at 130 ° C for 10 minutes, 0.5 mmH
It heated under reduced pressure of g, and formed the 20-micrometer-thick base film layer.
【００１９】他方、カルボキシル変性ＮＢＲ／ビスフェ
ノールＡ型エポキシ樹脂（エポキシ当量４５０）／ノボ
ラック型フェノール樹脂（軟化点７５℃）／２−メチル
イミダゾールを、１００／６０／３０／１の重量比で配
合したメチルエチルケトン溶液を、剥離剤で処理したポ
リエステルフィルムからなるセパレータの上に塗布し、
１００℃で１０分間加熱して厚さ１０μmの仮着型接着
層を形成した。On the other hand, carboxyl-modified NBR / bisphenol A type epoxy resin (epoxy equivalent 450) / novolac type phenol resin (softening point 75 ° C.) / 2-methylimidazole were blended in a weight ratio of 100/60/30/1. Methyl ethyl ketone solution, applied on a separator made of a polyester film treated with a release agent,
It was heated at 100 ° C. for 10 minutes to form a temporary adhesion type adhesive layer having a thickness of 10 μm.
【００２０】次に、前記で得た両部材をそのベースフィ
ルム層と仮着型接着層を介して圧着し、形成されたラミ
ネート体より両側のセパレータを剥離除去してダイボン
ド用シートを得た。Next, the two members obtained above were pressure-bonded to the base film layer and the temporary adhesion type adhesive layer, and the separators on both sides were peeled off from the formed laminate to obtain a die-bonding sheet.
【００２１】実施例２
ポリエーテルイミドに代えてポリエーテルスルホンを用
いたほかは実施例１に準じ、ベースフィルム層を形成し
てそれを用いて仮着型接着層とのラミネート体からなる
ダイボンド用シートを得た。Example 2 For die bonding comprising a base film layer formed according to Example 1 except that polyether sulfone was used in place of polyether imide and using the same, a laminate with a temporary adhesion type adhesive layer was used. Got the sheet.
【００２２】実施例３
ポリエーテルイミドに代えてポリスルホンを用いたほか
は実施例１に準じ、ベースフィルム層を形成してそれを
用いて仮着型接着層とのラミネート体からなるダイボン
ド用シートを得た。Example 3 A die-bonding sheet comprising a laminate with a temporary adhesion type adhesive layer was prepared in the same manner as in Example 1 except that polysulfone was used instead of polyetherimide and a base film layer was formed. Obtained.
【００２３】実施例４
ポリエーテルイミドに代えてフェノキシ樹脂を、溶剤に
メチルエチルケトンを用いたほかは実施例１に準じ、ベ
ースフィルム層を形成してそれを用いて仮着型接着層と
のラミネート体からなるダイボンド用シートを得た。Example 4 According to the same manner as in Example 1 except that a phenoxy resin was used in place of the polyetherimide and methyl ethyl ketone was used as a solvent, a base film layer was formed and a laminate with a temporary adhesion type adhesive layer was formed using the base film layer. A sheet for die bonding was obtained.
【００２４】実施例５
ポリエーテルイミドに代えて可溶性ポリアミドを、溶剤
にクロロホルム／メタノールを用いたほかは実施例１に
準じ、ベースフィルム層を形成してそれを用いて仮着型
接着層とのラミネート体からなるダイボンド用シートを
得た。Example 5 A base film layer was formed in the same manner as in Example 1 except that soluble polyamide was used instead of polyetherimide and chloroform / methanol was used as a solvent. A die-bonding sheet composed of a laminate was obtained.
【００２５】前記の実施例１〜５で得たダイボンド用シ
ートを５mm角に切断後、それを仮着型接着層を介して、
４２アロイ／銀メッキされたＱＦＰ（パッド６×６mm）
リードフレーム（１０連）に常温で仮接着し、そのリー
ドフレーム１００枚を積み重ねて常温で２４時間放置
後、各リードフレームを１枚ずつ採取したが、その際に
各リードフレーム間の融着、ないし接着は認められず、
各リードフレームを１枚ずつスムーズに採取することが
できた。After cutting the die-bonding sheets obtained in Examples 1 to 5 into 5 mm square pieces, the sheet was cut through a temporary adhesion type adhesive layer,
42 alloy / silver plated QFP (pad 6x6mm)
After temporarily adhering to a lead frame (10 stations) at room temperature, stacking 100 of the lead frames and leaving at room temperature for 24 hours, each lead frame was sampled one by one. No adhesion is observed,
Each lead frame could be collected smoothly one by one.
【００２６】次に、採取した各リードフレームに、その
ダイボンド用シートの切断片を介して５mm角の半導体チ
ップを２００℃で接着後、２００℃で３０分間加熱して
硬化させ、固着処理した。この処理により各リードフレ
ームに固着された半導体チップのそれぞれは、いずれの
場合にも２００℃下、２kg以上の剪断接着力を示し、そ
の充分な耐熱接着力に基づいて後続のワイヤーボンディ
ング工程、パッケージ工程等においても半導体チップの
剥離等のトラブルを生じなかった。Next, a 5 mm square semiconductor chip was adhered to each of the sampled lead frames through the cut pieces of the die-bonding sheet at 200 ° C., and then heated at 200 ° C. for 30 minutes to be cured and fixed. Each of the semiconductor chips fixed to each lead frame by this treatment shows a shear adhesive strength of 2 kg or more at 200 ° C. in any case, and based on the sufficient heat resistant adhesive strength, the subsequent wire bonding step, package No troubles such as peeling of the semiconductor chip occurred during the process.
【００２７】[0027]
【発明の効果】本発明によれば、シート方式に基づいて
電極部材の上に厚さや形状等の均一性に優れる接着剤層
を容易に付与でき、かつ常温等の低温で固定できて品質
の維持性に優れている。また、その接着剤層の固定状態
下に電極部材を積み重ねて常温等で保管しても接着剤層
が移着せず、電極部材間の接着も生じずに各電極部材を
容易に個別採取することができる。さらに、高温・高圧
を要することなく半導体チップを固着処理できて、後続
のワイヤーボンディング接続や樹脂モールド封止等に耐
える耐熱性を有している。According to the present invention, an adhesive layer having excellent uniformity in thickness, shape and the like can be easily provided on the electrode member based on the sheet method, and can be fixed at a low temperature such as room temperature to obtain high quality. It has excellent maintainability. In addition, even if the electrode members are stacked with the adhesive layer fixed and stored at room temperature, etc., the adhesive layers do not transfer and the electrode members do not adhere to each other, and each electrode member can be easily collected individually. You can Further, the semiconductor chip can be fixedly processed without requiring high temperature and high pressure, and has heat resistance to withstand subsequent wire bonding connection and resin mold sealing.
【図面の簡単な説明】[Brief description of drawings]
【図１】実施例の断面図。FIG. 1 is a sectional view of an example.
【図２】半導体チップを固着した状態の説明断面図。FIG. 2 is an explanatory sectional view showing a state in which a semiconductor chip is fixed.
３：ダイボンド用シート １：ベースとなるフィルム ２：仮着型接着層 ４：リードフレーム ５：ダイパッド ６：半導体チップ 3: Sheet for die bonding 1: Base film 2: Temporary adhesive layer 4: Lead frame 5: Die pad 6: Semiconductor chip
Claims (2)
脂と熱硬化性樹脂を成分とするポリマーアロイ型接着剤
からなると共に、６０℃以下の温度で実質的な粘着性を
示さないフィルムに、６０℃以下の温度で粘着性を示す
熱硬化性接着剤からなる仮着型接着層を設けたことを特
徴とするダイボンド用シート。1. A film comprising a polymer alloy type adhesive containing a thermoplastic resin having a glass transition point of 80 ° C. or higher and a thermosetting resin as components and exhibiting substantially no tackiness at a temperature of 60 ° C. or lower. A die-bonding sheet comprising a temporary adhesion type adhesive layer made of a thermosetting adhesive exhibiting tackiness at a temperature of 60 ° C. or lower.
イボンド用シート。2. The die-bonding sheet according to claim 1, which is electrically conductive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20497291A JPH0525439A (en) | 1991-07-19 | 1991-07-19 | Die-bonding sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20497291A JPH0525439A (en) | 1991-07-19 | 1991-07-19 | Die-bonding sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0525439A true JPH0525439A (en) | 1993-02-02 |
Family
ID=16499347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20497291A Pending JPH0525439A (en) | 1991-07-19 | 1991-07-19 | Die-bonding sheet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0525439A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08124421A (en) * | 1994-10-20 | 1996-05-17 | Ind Technol Res Inst | Conductive adhesive and method for connection of circuit member to board by using said adhesive |
| EP0977254A3 (en) * | 1998-07-22 | 2001-02-07 | Nitto Denko Corporation | Hot-melt sheet for holding and protecting semiconductor wafers and method for applying the same |
| JP2001152107A (en) * | 1999-11-25 | 2001-06-05 | Hitachi Chem Co Ltd | Laminated adhesive film, substrate for mounting semiconductor chip and semiconductor device |
| WO2002090455A1 (en) * | 2001-05-08 | 2002-11-14 | 3M Innovative Properties Company | Sealant composition, sealant and laminated structure containing same |
| JP2008024941A (en) * | 1999-02-18 | 2008-02-07 | Seiko Epson Corp | Semiconductor device |
-
1991
- 1991-07-19 JP JP20497291A patent/JPH0525439A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08124421A (en) * | 1994-10-20 | 1996-05-17 | Ind Technol Res Inst | Conductive adhesive and method for connection of circuit member to board by using said adhesive |
| EP0977254A3 (en) * | 1998-07-22 | 2001-02-07 | Nitto Denko Corporation | Hot-melt sheet for holding and protecting semiconductor wafers and method for applying the same |
| US6623594B1 (en) | 1998-07-22 | 2003-09-23 | Nitto Denko Corporation | Hot-melt sheet for holding and protecting semiconductor wafers and method for applying the same |
| JP2008024941A (en) * | 1999-02-18 | 2008-02-07 | Seiko Epson Corp | Semiconductor device |
| JP2001152107A (en) * | 1999-11-25 | 2001-06-05 | Hitachi Chem Co Ltd | Laminated adhesive film, substrate for mounting semiconductor chip and semiconductor device |
| WO2002090455A1 (en) * | 2001-05-08 | 2002-11-14 | 3M Innovative Properties Company | Sealant composition, sealant and laminated structure containing same |
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