JPH05243655A - Semiconductor laser controller - Google Patents

Semiconductor laser controller

Info

Publication number
JPH05243655A
JPH05243655A JP4045222A JP4522292A JPH05243655A JP H05243655 A JPH05243655 A JP H05243655A JP 4045222 A JP4045222 A JP 4045222A JP 4522292 A JP4522292 A JP 4522292A JP H05243655 A JPH05243655 A JP H05243655A
Authority
JP
Japan
Prior art keywords
semiconductor laser
circuit
laser
output
drive current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4045222A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Tamura
佳之 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4045222A priority Critical patent/JPH05243655A/en
Publication of JPH05243655A publication Critical patent/JPH05243655A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)

Abstract

PURPOSE:To prevent damage to a recording medium by outputting reproduced power of a predetermined or layer value even if temperature dependency of a semiconductor laser is varied due to a temperature change. CONSTITUTION:The semiconductor laser controller comprises a semiconductor laser 4, a photodiode 5 for monitoring it, circuits 6, 7, 8, 9 and 10 for controlling to feed back reproduced power, and error processors 15, 16 and 17 for stopping reproduced power driving current when a voltage applied across a heat sensitive resistor 14 exceeds a predetermined value by using the resistor 14 to monitor the reproduced power driving current.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、たとえば、半導体レ
ーザを光源として用いて記録媒体上に情報の記録再生を
行う光学式記録再生装置の半導体レーザの制御に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to control of a semiconductor laser of an optical recording / reproducing apparatus for recording / reproducing information on / from a recording medium by using the semiconductor laser as a light source.

【0002】[0002]

【従来の技術】図3は例えば実用新案出願公開平3−2
3819に示された従来の半導体レーザ制御装置であ
り、図において、1は記録媒体、2は記録媒体を回転さ
せるモータ、3は上記記録媒体1へレーザ光を照射する
光ピックアップ、4は上記光ピックアップ3の内部に設
置される半導体レーザ、5は光導体レーザ光強度をモニ
タするフォトダイオード、6はフォトダイオード5より
出力される電流を電圧へ変換するI−V変換回路、7は
I−V変換回路6の出力をサンプルホールドするサンプ
ルホールド回路、8はサンプルホールド回路7の出力と
所望の再生パワー出力値とを比較する誤差検出回路、9
は誤差検出回路8の出力値に従って電圧を電流に変換す
るV−I変換回路、10は再生パワー駆動電流と記録パ
ワー駆動電流を加算する回路、11はサンプルホールド
回路7へのサンプリングとホールドのタイミングを指令
するSHパルス発生回路、12は記録パワー駆動電流を
発生する記録パワー設定回路である。
2. Description of the Related Art FIG. 3 shows, for example, a utility model application publication No. 3-2.
3819 is a conventional semiconductor laser control device shown in FIG. 38, in which 1 is a recording medium, 2 is a motor for rotating the recording medium, 3 is an optical pickup for irradiating the recording medium 1 with a laser beam, and 4 is the optical system. A semiconductor laser installed inside the pickup 3, 5 is a photodiode for monitoring the light intensity of the light guide laser, 6 is an IV conversion circuit for converting the current output from the photodiode 5 into a voltage, and 7 is an IV A sample and hold circuit that samples and holds the output of the conversion circuit 6, 8 is an error detection circuit that compares the output of the sample and hold circuit 7 with a desired reproduction power output value, and 9
Is a V-I conversion circuit for converting a voltage into a current according to the output value of the error detection circuit 8, 10 is a circuit for adding the reproduction power drive current and the recording power drive current, and 11 is the timing of sampling and holding to the sample hold circuit 7. An SH pulse generation circuit for instructing the recording power, and a recording power setting circuit 12 for generating a recording power drive current.

【0003】次に動作について説明する。半導体レーザ
4より出力されたレーザ光はフォトダイオード5により
検知され、光パワーに比例した電流へと変換される。フ
ォトダイオード5より出力される電流は次段のI−V変
換回路6にて電圧へと変換され、サンプルホールド回路
7を通して誤差検知回路8にて基準電圧と比較される。
比較され、その差の電圧が誤差検出回路8より出力さ
れ、次のV−I変換回路9にて再生パワー駆動電流とな
り、電流加算回路10を通りLDへ供給される。以上の
回路により、再生パワーについてはフィードバック制御
がかかり常に一定の再生パワー出力光が得られる。サン
プルホールド回路7では、記録時には、高出力のパワー
が半導体レーザ4より出力される為、再生パワーが出力
されている時にサンプリング状態にしておき、記録パワ
ーが出力される場合にホールド状態とし、再生パワー出
力のみフィートバック制御がかかるようにしている。サ
ンプリングとホールドの切換は制御信号13に従ってサ
ンプルホールドパルス発生回路を通してサンプルホール
ド回路7へ渡される。又、制御信号13に従って記録パ
ワー設定回路12がパルス状の記録パワー駆動電流を作
り、電流加算回路10にて再生パワー駆動電流と合わさ
れ、半導体レーザ4へ流されて、再生パワーにパルス状
の記録パワーが重畳された形のレーザ出力が得られる。
Next, the operation will be described. The laser light output from the semiconductor laser 4 is detected by the photodiode 5 and converted into a current proportional to the optical power. The current output from the photodiode 5 is converted into a voltage by the IV conversion circuit 6 in the next stage, and is compared with the reference voltage by the error detection circuit 8 through the sample hold circuit 7.
The voltage of the difference is compared and output from the error detection circuit 8 and becomes the reproduction power drive current in the next VI conversion circuit 9, which is supplied to the LD through the current addition circuit 10. With the above circuit, feedback control is applied to the reproduction power, and a constant reproduction power output light is always obtained. At the time of recording, the sample-hold circuit 7 outputs a high output power from the semiconductor laser 4. Therefore, the sample-hold circuit 7 is set to the sampling state when the reproducing power is being output, and is set to the hold state when the recording power is being output. Only the power output is controlled by footback control. Switching between sampling and holding is passed to the sample and hold circuit 7 through the sample and hold pulse generation circuit according to the control signal 13. Further, the recording power setting circuit 12 produces a pulsed recording power drive current according to the control signal 13, is combined with the reproduction power drive current in the current adding circuit 10 and is flown to the semiconductor laser 4 to record the reproduction power in pulse form. A laser output in the form of superimposed power is obtained.

【0004】[0004]

【発明が解決しようとする課題】従来の半導体レーザ制
御回路は以上の様に構成されているので、何らかの事故
により、再生パワーが目標値より高く出力され、記録媒
体を破壊してしまう可能性があった。
Since the conventional semiconductor laser control circuit is constructed as described above, the reproduction power may be output higher than the target value and the recording medium may be destroyed due to some accident. there were.

【0005】この発明は上記のような問題点を解消する
ためになされたもので、半導体レーザより過大な再生パ
ワーが出力されることを防止し、記録媒体を破壊しない
半導体レーザ制御装置を得ることを目的とする。
The present invention has been made in order to solve the above problems, and provides a semiconductor laser control device which prevents an excessive reproduction power from being output from a semiconductor laser and does not destroy a recording medium. With the goal.

【0006】[0006]

【課題を解決するための手段】この発明に係わる半導体
レーザ制御装置は、たとえば、再生パワー駆動電流が流
れる所に温度により電流値を補正できる温度依存性を持
つ素子を設けたものであり、以下の要素を有するもので
ある。 (a)レーザ光を出力する半導体レーザ、(b)上記半
導体レーザを駆動するためのレーザ駆動電流を生成する
レーザ駆動電流生成手段、(c)上記半導体レーザのレ
ーザ光出力が一定になるように、温度変化に対応して、
上記レーザ駆動電流生成手段により生成されたレーザ駆
動電流を補正する電流補正手段。
A semiconductor laser control device according to the present invention is, for example, provided with an element having a temperature dependence capable of correcting a current value according to temperature at a place where a reproduction power drive current flows. It has the elements of. (A) a semiconductor laser that outputs a laser beam, (b) a laser drive current generating unit that generates a laser drive current for driving the semiconductor laser, and (c) so that the laser light output of the semiconductor laser becomes constant. , In response to temperature changes,
Current correction means for correcting the laser drive current generated by the laser drive current generation means.

【0007】[0007]

【作用】この発明における半導体レーザ制御装置は、半
導体レーザの温度依存性をその温度特性と所定の関係に
ある温度依存性を持つ素子(たとえば、感熱抵抗)にて
相殺する事により、再生パワー駆動電流を補正し、再生
パワー出力が温度依存性のない出力になるように再生パ
ワー駆動電流を制御する。また、この素子をモニタする
ことにより再生パワー出力の異常を知ることができ、異
常の場合には、再生パワー駆動電流をオフにして記録媒
体を破壊する事を防ぐ。
In the semiconductor laser control device according to the present invention, the temperature dependence of the semiconductor laser is offset by an element (for example, a heat sensitive resistor) having a temperature dependence having a predetermined relationship with the temperature characteristic of the semiconductor laser to drive the reproduction power. The current is corrected and the reproduction power drive current is controlled so that the reproduction power output has an output that does not depend on temperature. Also, by monitoring this element, it is possible to know the abnormality of the reproduction power output, and in the case of abnormality, it is possible to prevent the recording medium from being destroyed by turning off the reproduction power drive current.

【0008】[0008]

【実施例】実施例1.以下この発明の一実施例を図につ
いて説明する。図1において、14は温度が高くなるほ
ど抵抗値が小さくなる感熱抵抗(この発明における電流
補正手段の一例)、15は感熱抵抗14の両端の電圧の
差を検出する差動回路、16は差動回路の出力と基準設
定値との比較を行うコンパレータ回路、17はコンパレ
ータ回路16の出力に従って再生パワー駆動電流を停止
するエラー処理回路、その他は図1の構成と同じであ
る。但し感熱抵抗15は半導体レーザ4の近くに設置す
る必要がある。
EXAMPLES Example 1. An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, 14 is a heat-sensitive resistor whose resistance value becomes smaller as the temperature becomes higher (an example of current correction means in the present invention), 15 is a differential circuit for detecting a voltage difference between both ends of the heat-sensitive resistor 14, and 16 is a differential circuit. The comparator circuit for comparing the output of the circuit with the reference set value, 17 is an error processing circuit for stopping the reproduction power drive current according to the output of the comparator circuit 16, and others are the same as the configuration of FIG. However, the thermal resistor 15 needs to be installed near the semiconductor laser 4.

【0009】図2は一般的な半導体レーザの特性を示し
た図である。半導体レーザは温度が高くなるほどレーザ
光を出力するしきい値電流が大きくなり、効率(電流増
加分に対するレーザ光パワー増加分)も低くなり、同じ
再生パワー光を得るのに大きな電流が必要となる。たと
えば、図において温度a<温度bとすると、温度bにお
けるしきい値電流Ithb は温度aにおけるしきい値電流
tha よりも大きくなる。また、同一の再生パワーXを
得る場合は、ILDa <ILDb となり、温度が高いほど同
一の光出力レベルを得るため大きな電流が必要となる。
よって再生パワー駆動電流が流れる箇所に、温度が高く
なるほど抵抗値が小さくなる感熱抵抗14を設け、その
温度係数は一定の再生パワーを出力するのに必要な電流
の温度係数を相殺する値を用いるようにし、一定の再生
パワーを出力している状態では、感熱抵抗14の両端に
温度が変化しても同じ電圧がかかる様にする。次にその
両端の電圧を差動回路15へ入力し、電圧差として取り
出し、コンパレータ16にてその電圧差を基準電圧と比
較し、電圧差が基準電圧よりも大きければ過大な再生パ
ワーが出力されたと見なし、エラー処理回路17へ信号
を送り、エラー処理回路17はV−I変換回路9へ働
き、電流の出力を止める。但し、コンパレータ16へ入
力される基準電圧は、記録媒体が破壊されない値に設定
する必要がある。以上のように、この実施例では、半導
体レーザを光源として用いて記録媒体上に情報の記録再
生を行う光学式記録再生装置の半導体レーザ制御装置に
おいて、半導体レーザの光出力をモニタする光出力検出
手段と、再生時のレーザ光強度を検出してこれをサンプ
ルする手段と、記録時に上記レーザ光強度のサンプル値
をホールドする手段と、該サンプルホールド値と所望の
値との比較を行い、再生時のレーザ駆動電流を制御する
手段と、再生時のレーザ駆動電流を温度依存性を持つセ
ンサにて検出する手段と、検出された再生時のレーザ駆
動電流の大きさが一定値を越えると再生時のレーザ駆動
電流を停止する手段とからなることを特徴とする半導体
レーザ制御装置を説明した。
FIG. 2 is a diagram showing the characteristics of a general semiconductor laser. As the temperature of the semiconductor laser rises, the threshold current for outputting laser light increases, and the efficiency (increase in laser light power relative to the increase in current) also decreases, and a large current is required to obtain the same reproduction power light. .. For example, if temperature a <temperature b in the figure, the threshold current I thb at temperature b becomes larger than the threshold current I tha at temperature a. Further, when the same reproduction power X is obtained, I LDa <I LDb , and a higher current requires a larger current to obtain the same light output level.
Therefore, a heat-sensitive resistor 14 having a smaller resistance value as the temperature rises is provided at a portion where the reproduction power drive current flows, and the temperature coefficient thereof uses a value that cancels the temperature coefficient of the current required to output a constant reproduction power. Thus, in the state where a constant reproduction power is output, the same voltage is applied to both ends of the thermal resistor 14 even if the temperature changes. Next, the voltage between both ends thereof is input to the differential circuit 15 and taken out as a voltage difference, and the comparator 16 compares the voltage difference with the reference voltage. If the voltage difference is larger than the reference voltage, an excessive reproducing power is output. Therefore, the error processing circuit 17 sends a signal to the error processing circuit 17, and the error processing circuit 17 works on the VI converting circuit 9 to stop the output of current. However, the reference voltage input to the comparator 16 needs to be set to a value that does not damage the recording medium. As described above, in this embodiment, in the semiconductor laser control device of the optical recording / reproducing apparatus for recording / reproducing information on / from the recording medium using the semiconductor laser as the light source, the optical output detection for monitoring the optical output of the semiconductor laser is performed. Means, means for detecting the laser light intensity at the time of reproduction and sampling this, means for holding the sample value of the laser light intensity at the time of recording, comparing the sample hold value with a desired value, and reproducing Means for controlling the laser drive current during playback, means for detecting the laser drive current during playback with a temperature-dependent sensor, and playback when the magnitude of the detected laser drive current during playback exceeds a certain value. The semiconductor laser control device has been described, which comprises a means for stopping the laser drive current at the time.

【0010】実施例2.なお、上記実施例では、半導体
レーザ4の駆動電流の温度依存性を相殺するのに感熱抵
抗14を用いたが、他の温度依存性を持つ素子にて、半
導体レーザ4の駆動電流の温度依存性を相殺しても良
い。
Embodiment 2. Although the thermal resistance 14 is used to cancel the temperature dependence of the driving current of the semiconductor laser 4 in the above embodiment, the temperature dependence of the driving current of the semiconductor laser 4 is used in the element having another temperature dependence. Sex may be offset.

【0011】[0011]

【発明の効果】以上のように、この発明によれば、半導
体レーザの再生パワー駆動電流の温度依存性を相殺する
ので、温度変化があっても再生パワーを一定に保つ半導
体レーザ制御装置を得ることができる。
As described above, according to the present invention, the temperature dependence of the reproduction power drive current of the semiconductor laser is canceled, so that the semiconductor laser control device for maintaining the reproduction power constant even if the temperature changes. be able to.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例による半導体レーザ制御回
路を示すブロック図である。
FIG. 1 is a block diagram showing a semiconductor laser control circuit according to an embodiment of the present invention.

【図2】一般的な半導体レーザの入出力特性を示す図で
ある。
FIG. 2 is a diagram showing input / output characteristics of a general semiconductor laser.

【図3】従来の半導体レーザ制御回路を示すブロック図
である。
FIG. 3 is a block diagram showing a conventional semiconductor laser control circuit.

【符号の説明】[Explanation of symbols]

1 記録媒体 2 モータ 3 光ピックアップ 4 半導体レーザ 5 フォトダイオード 6 I−V変換回路 7 サンプルホールド回路 8 誤差検出回路 9 V−I変換回路 10 電流加算回路 11 サンプルホールドパルス発生回路 12 記録パワー設定回路 13 制御信号 14 感熱抵抗 15 差動回路 16 コンパレータ 17 エラー処理回路 1 recording medium 2 motor 3 optical pickup 4 semiconductor laser 5 photodiode 6 IV conversion circuit 7 sample hold circuit 8 error detection circuit 9 VI conversion circuit 10 current addition circuit 11 sample hold pulse generation circuit 12 recording power setting circuit 13 Control signal 14 Thermal resistance 15 Differential circuit 16 Comparator 17 Error processing circuit

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 以下の要素を有する半導体レーザ制御装
置 (a)レーザ光を出力する半導体レーザ、 (b)上記半導体レーザを駆動するためのレーザ駆動電
流を生成するレーザ駆動電流生成手段、 (c)上記半導体レーザのレーザ光出力が一定になるよ
うに、温度変化に対応して、上記レーザ駆動電流生成手
段により生成されたレーザ駆動電流を補正する電流補正
手段。
1. A semiconductor laser control device having the following elements: (a) a semiconductor laser for outputting a laser beam; (b) a laser drive current generating means for generating a laser drive current for driving the semiconductor laser; ) Current correction means for correcting the laser drive current generated by the laser drive current generation means in response to temperature changes so that the laser light output of the semiconductor laser becomes constant.
JP4045222A 1992-03-03 1992-03-03 Semiconductor laser controller Pending JPH05243655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4045222A JPH05243655A (en) 1992-03-03 1992-03-03 Semiconductor laser controller

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4045222A JPH05243655A (en) 1992-03-03 1992-03-03 Semiconductor laser controller

Publications (1)

Publication Number Publication Date
JPH05243655A true JPH05243655A (en) 1993-09-21

Family

ID=12713244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4045222A Pending JPH05243655A (en) 1992-03-03 1992-03-03 Semiconductor laser controller

Country Status (1)

Country Link
JP (1) JPH05243655A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003071528A1 (en) * 2002-02-25 2003-08-28 Koninklijke Philips Electronics N.V. Controlling the temperature of a laser diode in a disk drive
CN100424764C (en) * 2006-09-30 2008-10-08 威盛电子股份有限公司 Power controlling method based on time-base error feedback

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003071528A1 (en) * 2002-02-25 2003-08-28 Koninklijke Philips Electronics N.V. Controlling the temperature of a laser diode in a disk drive
CN1311448C (en) * 2002-02-25 2007-04-18 皇家飞利浦电子股份有限公司 Controlling the temperature of a laser diode in a disk drive
CN100424764C (en) * 2006-09-30 2008-10-08 威盛电子股份有限公司 Power controlling method based on time-base error feedback

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