JPH05226311A - Cleaning equipment - Google Patents

Cleaning equipment

Info

Publication number
JPH05226311A
JPH05226311A JP2826892A JP2826892A JPH05226311A JP H05226311 A JPH05226311 A JP H05226311A JP 2826892 A JP2826892 A JP 2826892A JP 2826892 A JP2826892 A JP 2826892A JP H05226311 A JPH05226311 A JP H05226311A
Authority
JP
Japan
Prior art keywords
block
cleaning
clean room
pressure
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2826892A
Other languages
Japanese (ja)
Inventor
Toshiki Furue
俊樹 古江
Toshiaki Kikko
敏晃 橘高
Mitsugi Nomura
貢 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Power Ltd
Original Assignee
Babcock Hitachi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Babcock Hitachi KK filed Critical Babcock Hitachi KK
Priority to JP2826892A priority Critical patent/JPH05226311A/en
Publication of JPH05226311A publication Critical patent/JPH05226311A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To easily install a small-sized cleaning equipment in a clean room, by installing a first block equipped with a transferring equipment in the clean room, and installing a second block equipped with an isolation tank and a recirculation system outside the clean room. CONSTITUTION:A block 1 constitutes in a cleaning tank 10 storing a semiconductor wafer 100 and a casing 101 storing a transferring equipment 12. A block 2 constitutes in an isolation tank 20 which introduces supercritical fluid from the cleaning tank 10 the pressure of which fluid is reduced to be a specified value lower than or equal to the supercritical pressure by a pressure adjusting valve 13, and a casing 102 storing apparatuses for forming liquid in the supercritical state. The block 1 participating in direct cleaning is installed in the clean room, and the block 2 is installed outside the clean room. Thereby equipments to be installed in the clean room can be reduced and made small- sized.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体ウエハ等の製造
プロセスにおいて、被洗浄物上の汚染物質を超臨界流体
を用いて除去する洗浄装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus for removing contaminants on an object to be cleaned by using a supercritical fluid in the manufacturing process of semiconductor wafers and the like.

【0002】[0002]

【従来の技術】最近、半導体ウエハの集積度の向上のた
めには、ウエハ上の汚れの除去が完成品の品質維持から
非常に重要な課題である。この問題解決のため、種々の
研究、開発がなされている。
2. Description of the Related Art Recently, in order to improve the degree of integration of semiconductor wafers, removal of dirt on the wafer is a very important issue from the viewpoint of maintaining the quality of finished products. Various studies and developments have been made to solve this problem.

【0003】この洗浄方法の一つとして、「超臨界ガス
又は液化ガスによる基板の洗浄方法とその装置」が提案
されている(特開昭63−179530号公報参照)。
この方法は超臨界流体を使用して、汚染物質を流体中に
溶解させて除去する方法で、エステル、脂肪ならびに水
分を除去できることが記載されている。
As one of the cleaning methods, "a method for cleaning a substrate with a supercritical gas or a liquefied gas and its apparatus" has been proposed (see Japanese Patent Laid-Open No. 63-179530).
It is described that the method uses a supercritical fluid to dissolve contaminants in the fluid and remove the contaminants, thereby removing the ester, fat and water.

【0004】図2は、この提案に基づく洗浄装置の系統
図である。同図に示すように、半導体ウエハ100を収
納する洗浄槽10と分離槽20は、圧力調整弁13で連
結されている。分離槽20の出口側は、圧力調整弁21
を介して濾過器30、冷却器32、圧送ポンプ33およ
び加熱器34を介して前記洗浄槽10に連結する再循環
系を構成している。図中の22は抜出弁、31は濾材、
40、50、51、52ならび60は開閉弁である。
FIG. 2 is a system diagram of a cleaning device based on this proposal. As shown in the figure, the cleaning tank 10 for containing the semiconductor wafer 100 and the separation tank 20 are connected by a pressure adjusting valve 13. The outlet side of the separation tank 20 has a pressure adjusting valve 21.
A recirculation system connected to the cleaning tank 10 via a filter 30, a cooler 32, a pressure feed pump 33, and a heater 34 via. In the figure, 22 is an extraction valve, 31 is a filter medium,
40, 50, 51, 52 and 60 are on-off valves.

【0005】超臨界ガスを洗浄槽10に導き、その内側
に配置されている半導体100を洗浄し、分離槽20で
減圧することにより汚染物質を除去し、濾過器30、冷
却器32を通して圧送ポンプ33で昇圧した後、加熱器
34で超臨界状態の流体として再循環するようになつて
いる。
The supercritical gas is introduced into the cleaning tank 10, the semiconductor 100 placed inside the cleaning tank is cleaned, and the contaminants are removed by depressurizing it in the separation tank 20. The pump is fed through the filter 30 and the cooler 32. After the pressure is increased by 33, it is recirculated as a fluid in a supercritical state by the heater 34.

【0006】[0006]

【発明が解決しようとする課題】しかしこの提案では装
置を半導体ウエハの洗浄などに使用する場合、それをク
リーンルーム内に設置することについては配慮されてい
ない。
However, in this proposal, when the apparatus is used for cleaning semiconductor wafers, etc., no consideration is given to installing it in a clean room.

【0007】すなわち、超臨界流体として比較的低圧で
可能なCO2 を使用する場合でも、圧力は約80〜10
0〔kg/cm2 G〕の高圧とする必要がある。この高
圧設備を クリーンルーム内に設置することは、従来の
半導体設備が常圧もしくは減圧下での操作であるため、
クリーンルーム内に大掛かりな高圧設備を設置する必要
がある。そのためにクリーンルームの建設あるいはメン
テナンスに莫大な経費がかかるばかりでなく、設置スペ
ースの問題もある。
That is, even when CO 2 which can be used at a relatively low pressure is used as the supercritical fluid, the pressure is about 80 to 10
A high pressure of 0 [kg / cm 2 G] is required. Installing this high-pressure equipment in a clean room is because conventional semiconductor equipment is operated under normal pressure or reduced pressure.
It is necessary to install large-scale high-pressure equipment in the clean room. Therefore, not only enormous cost is required for the construction or maintenance of the clean room, but there is also a problem of installation space.

【0008】本発明の目的は、前述した従来技術の欠点
を解消し、小型でクリーンルーム内に容易に設置できる
洗浄装置を提供することにある。
An object of the present invention is to solve the above-mentioned drawbacks of the prior art and to provide a small-sized cleaning device which can be easily installed in a clean room.

【0009】[0009]

【課題を解決するための手段】本発明は前記目的を達成
するため、被洗浄物の表面に付着した汚染物質を超臨界
流体で溶解させて洗浄する洗浄装置において、その洗浄
装置が少なくとも、被洗浄物を収納して洗浄する洗浄槽
と、その洗浄槽に対して被洗浄物を出し入れする移送装
置とを備えた第1のブロツクと、前記超臨界流体から汚
染物質を分離する分離槽と、その分離槽から洗浄槽への
超臨界流体の再循環系統とを備えた第2のブロツクとに
分割され、前記第1のブロツクがクリーンルーム内に設
置され、前記第2のブロツクがクリーンルーム外に設置
されて、第1のブロツクと第2のブロツクとの間を、超
臨界流体が流通する配管で接続したことを特徴とすると
するものである。
In order to achieve the above object, the present invention provides a cleaning apparatus for dissolving contaminants adhering to the surface of an object to be cleaned with a supercritical fluid for cleaning, at least the cleaning apparatus being A first block including a cleaning tank for storing and cleaning the cleaning object, and a transfer device for transferring the cleaning object into and out of the cleaning tank; a separation tank for separating contaminants from the supercritical fluid; A second block having a supercritical fluid recirculation system from the separation tank to the cleaning tank, the first block is installed in a clean room, and the second block is installed outside the clean room. The first block and the second block are connected by a pipe through which a supercritical fluid flows.

【0010】[0010]

【作用】クリーンルーム内での操作が必要な設備は、半
導体ウエハなどの被洗浄物を収納して洗浄する洗浄槽
と、その洗浄槽に対して被洗浄物を出し入れする移送装
置とであり、それ以外の設備はクリーンルーム内に設置
する必要はなく、クリーンルーム外に設置しても支障は
ない。そしてこれらの設備間は、超臨界流体が流通可能
な2本の配管で接続すればよい。このようにすることに
より、クリーンルームの小型化、省スペース化が図れ
る。
The equipment that needs to be operated in the clean room is a cleaning tank for accommodating and cleaning an object to be cleaned such as a semiconductor wafer, and a transfer device for taking the object in and out of the cleaning tank. Other equipment does not need to be installed inside the clean room and can be installed outside the clean room without any problem. Then, these facilities may be connected by two pipes through which a supercritical fluid can flow. By doing so, the clean room can be downsized and the space can be saved.

【0011】また、この配管が長くなり、圧力損失ある
いは熱損失が懸念されるが、圧力は約80〜100〔k
g/cm2 G〕と高圧であり、圧力損失は大きな比率と
はならず、温度は40℃程度で比較的室温に近いため、
簡単な保温でその対策が可能である。
Further, this pipe becomes long, and there is a fear of pressure loss or heat loss, but the pressure is about 80 to 100 [k].
g / cm 2 G], the pressure loss does not become a large ratio, and the temperature is about 40 ° C., which is relatively close to room temperature.
The measure can be taken with simple heat retention.

【0012】一方、クリーンルーム内に設置された高圧
設備は洗浄槽であるが、この洗浄槽は必要最小限度の大
きさ、すなわち、半導体ウエハなどの被洗浄物が1つ収
納できる大きさとし、処理数の増加は槽数を増加するこ
とにより対応できる。このことにより、クリーンルーム
内に設置された高圧設備にトラブルが生じても、その被
害を最小とすることができる。
On the other hand, the high-pressure equipment installed in the clean room is a cleaning tank, and this cleaning tank has a minimum required size, that is, a size such that one object to be cleaned such as a semiconductor wafer can be stored, and the number of processes. Can be dealt with by increasing the number of tanks. As a result, even if trouble occurs in the high pressure equipment installed in the clean room, the damage can be minimized.

【0013】[0013]

【実施例】本発明の実施例に係る洗浄装置を図1ととも
に説明する。この洗浄装置は、第1のブロツク1と第2
のブロツク2とに2分割されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A cleaning device according to an embodiment of the present invention will be described with reference to FIG. This cleaning device consists of a first block 1 and a second block
Block 2 and is divided into two.

【0014】このブロツク1は、半導体ウエハ100を
収納する洗浄槽10と、この洗浄槽10から半導体ウエ
ハ100を出し入れする移送装置12をケーシング10
1に収納したものから構成されている。
The block 1 includes a cleaning tank 10 for housing the semiconductor wafer 100, and a transfer device 12 for loading / unloading the semiconductor wafer 100 into / from the cleaning tank 10.
It is composed of items stored in 1.

【0015】前記ブロツク2は、洗浄槽10からの超臨
界流体を圧力調整弁13で超臨界圧以下の所定の圧力に
減圧して導入する分離槽20と、その分離槽20の出口
側は圧力調整弁21を介して配置された濾過器30に連
結し、冷却器32、圧送ポンプ33および加熱器34で
超臨界状態の液体とする機器類を収納したケーシング1
02から構成されている。
The block 2 has a separation tank 20 for introducing the supercritical fluid from the cleaning tank 10 after depressurizing the supercritical fluid to a predetermined pressure below the supercritical pressure with a pressure control valve 13 and a pressure at the outlet side of the separation tank 20. A casing 1 which is connected to a filter 30 arranged via a regulating valve 21 and which houses devices for making a liquid in a supercritical state by a cooler 32, a pressure pump 33 and a heater 34.
It is composed of 02.

【0016】前記ブロツク1に内蔵されている洗浄槽1
0は、半導体ウエハ100を1枚収納できる最小容量に
設計されており、図に示すようにその洗浄槽10が複数
設置されている。洗浄槽10には半導体ウエハ100を
出し入れする開口部が設けられ、その開口部には内圧に
耐えるように設計された開閉蓋11が取り付けられてい
る。
Cleaning tank 1 built in the block 1
0 is designed to have a minimum capacity that can accommodate one semiconductor wafer 100, and a plurality of cleaning tanks 10 are installed as shown in the figure. The cleaning tank 10 is provided with an opening for loading and unloading the semiconductor wafer 100, and an opening / closing lid 11 designed to withstand the internal pressure is attached to the opening.

【0017】この洗浄槽10には、開閉弁51を通して
超臨界ガスを導入するラインと、開閉弁52を通してそ
の超臨界ガスを排出してブロツク2の分離槽20へ送出
しするラインと、放出弁53を通して排気ラインへ連絡
しているラインとが、それぞれ接続されている。
In the cleaning tank 10, a line for introducing the supercritical gas through the opening / closing valve 51, a line for discharging the supercritical gas through the opening / closing valve 52 and sending the supercritical gas to the separation tank 20 of the block 2, and a discharge valve. Lines communicating with the exhaust line through 53 are connected to each other.

【0018】前記ブロツク2には、加熱器20の出口よ
り開閉弁50を通して圧力弁13の前側に接続されるバ
イパスライン54が設けられている。
The block 2 is provided with a bypass line 54 which is connected from the outlet of the heater 20 through the opening / closing valve 50 to the front side of the pressure valve 13.

【0019】直接洗浄に関与する前記ブロツク1はクリ
ールーム内に設置され、ブロツク2はクリールーム外に
設置される。
The block 1 directly involved in the cleaning is installed inside the clean room, and the block 2 is installed outside the clean room.

【0020】被洗浄物である半導体ウエハ100は1枚
毎に移送装置12により洗浄槽10内に挿入され、開閉
蓋11を閉じ、開閉弁51を開いて超臨界ガスを導入す
る。この超臨界ガスは半導体ウエハ100上の水分、油
脂分、エステルなどをの汚染物を溶解し、その後開閉弁
52を通じてブロツク2の分離槽20へ流れる。この
際、圧力調整弁13で超臨界圧力以下へ減圧され、流体
中の溶解汚染物質を析出した後、圧力調整弁21を介し
て濾過器30および冷却器32を通し、圧送ポンプ33
で超臨界圧力以上に昇圧する。その後、加熱器34で昇
温し、流体を超臨界状態にして、前記ブロツク1の洗浄
槽10へ再循環される。
The semiconductor wafers 100 to be cleaned are inserted one by one into the cleaning tank 10 by the transfer device 12, the opening / closing lid 11 is closed, and the opening / closing valve 51 is opened to introduce the supercritical gas. The supercritical gas dissolves contaminants such as water, oil and fat, and ester on the semiconductor wafer 100, and then flows through the opening / closing valve 52 into the separation tank 20 of the block 2. At this time, the pressure adjusting valve 13 reduces the pressure to a level below the supercritical pressure to deposit dissolved contaminants in the fluid, and then passes the filter 30 and the cooler 32 through the pressure adjusting valve 21 and the pressure feed pump 33.
To raise the pressure above the supercritical pressure. Then, the temperature is raised by the heater 34 to bring the fluid into a supercritical state, and the fluid is recirculated to the cleaning tank 10 of the block 1.

【0021】前述のようにブロツク1の洗浄槽10は複
数設置されており、洗浄が終了した洗浄槽10は開閉弁
51、52を閉じ、放出弁53を開いて洗浄槽10の内
圧を大気圧とした後、開閉蓋11を開いて半導体ウエハ
100を取り出す。この際、洗浄槽10は複数設置され
ているから、他の洗浄ラインはそのまま作動しており、
ブロツク2の各設備は通常の運転を継続することがてき
る。したがつてブロツク1の運転状況がブロツク2の運
転操作に直接影響することがなく、2つのブロツク1、
2を遠い位置に設置しても支障はない。
As described above, a plurality of cleaning tanks 10 for the block 1 are installed, and the cleaning tank 10 that has completed cleaning closes the on-off valves 51 and 52 and the discharge valve 53 to open the internal pressure of the cleaning tank 10 to the atmospheric pressure. After that, the opening / closing lid 11 is opened and the semiconductor wafer 100 is taken out. At this time, since a plurality of cleaning tanks 10 are installed, the other cleaning lines are still operating,
Each equipment of block 2 can continue normal operation. Therefore, the operation status of the block 1 does not directly affect the operation of the block 2, and the two blocks 1,
There is no problem even if 2 is installed at a distant position.

【0022】起動時あるいは全ての洗浄装置が停止して
いる場合は、ブロツク2におけるバイパスライン54の
開閉弁50を開いて循環運転することで、ブロツク2を
単独で運転することがてき、ブロツク1と一体化してク
リーンルーム内に設置する必要はない。
At the time of start-up or when all the cleaning devices are stopped, the block 2 can be operated independently by opening and closing the opening / closing valve 50 of the bypass line 54 in the block 2 to operate the block 2 independently. It is not necessary to install it in a clean room as a single unit.

【0023】洗浄槽10は、半導体ウエハ100を1枚
毎処理するに必要な最小寸法になつており、かつ放出弁
53を開くことにより洗浄槽10の圧力を短時間に常圧
にすることができる。洗浄槽10の1つにトラブルが生
じた場合、その洗浄槽10のラインのみを常圧にするこ
とで対応できる。また、高圧による破裂などが生じた場
合でも、周囲の設備に影響を与える程の被害にはならな
い。
The cleaning tank 10 has a minimum size required to process the semiconductor wafers 100 one by one, and the pressure of the cleaning tank 10 can be brought to normal pressure in a short time by opening the discharge valve 53. it can. When a trouble occurs in one of the cleaning tanks 10, it can be dealt with by setting only the line of the cleaning tank 10 to the normal pressure. In addition, even if a high-pressure rupture occurs, it will not cause damage enough to affect surrounding equipment.

【0024】本実施例は、特に高圧設備の設置を嫌う半
導体の洗浄装置について説明したが、本発明は半導体の
洗浄に限定されるものではなく、他の部材の洗浄におい
て、設置場所の条件により分割設置が望ましい場合、特
に高圧設備を設置しにくい場所への設置に有効である。
Although the present embodiment has described the semiconductor cleaning apparatus which particularly dislikes the installation of high-voltage equipment, the present invention is not limited to semiconductor cleaning, and other members may be cleaned depending on the conditions of the installation site. When a separate installation is desirable, it is especially effective for installation in locations where high-voltage equipment is difficult to install.

【0025】[0025]

【発明の効果】本発明は前述のような構成になつてお
り、クリーンルーム内に設置する設備を少なくかつ小型
化できるので、クリーンルーム内の設置スペースを大
略、5分の1以下にすることができる。
The present invention is constructed as described above, and the equipment installed in the clean room can be reduced in number and downsized, so that the installation space in the clean room can be reduced to approximately one fifth or less. .

【0026】また、クリーンルーム内に設置する高圧設
備の容積を小さくすることにより、安全性が増し、安心
してクリーンルーム内への設置ができ、特別な安全対策
が必要でなくなる。
Further, by reducing the volume of the high-pressure equipment installed in the clean room, the safety is increased, the safe installation can be carried out in the clean room, and no special safety measures are required.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例に係る洗浄装置の系統図であ
る。
FIG. 1 is a system diagram of a cleaning device according to an embodiment of the present invention.

【図2】従来の洗浄装置の系統図である。FIG. 2 is a system diagram of a conventional cleaning device.

【符号の説明】[Explanation of symbols]

1 第1のブロツク 2 第2のブロツク 10 洗浄槽 11 開閉蓋 12 移送装置 20 分離槽 30 濾過器 32 冷却器 33 圧送ポンプ 34 加熱器 100 半導体ウエハ 101、102 ケーシング 1 1st block 2 2nd block 10 Cleaning tank 11 Opening / closing lid 12 Transfer device 20 Separation tank 30 Filter 32 Cooler 33 Pressure pump 34 Heater 100 Semiconductor wafer 101, 102 Casing

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 被洗浄物の表面に付着した汚染物質を超
臨界流体で溶解させて洗浄する洗浄装置において、その
洗浄装置が少なくとも、 被洗浄物を収納して洗浄する洗浄槽と、その洗浄槽に対
して被洗浄物を出し入れする移送装置とを備えた第1の
ブロツクと、 前記超臨界流体から汚染物質を分離する分離槽と、その
分離槽から洗浄槽への超臨界流体の再循環系統とを備え
た第2のブロツクとに分割され、 前記第1のブロツクがクリーンルーム内に設置され、前
記第2のブロツクがクリーンルーム外に設置されて、 第1のブロツクと第2のブロツクとの間を、超臨界流体
が流通する配管で接続したことを特徴とする洗浄装置。
1. A cleaning device for dissolving contaminants adhering to the surface of an object to be cleaned with a supercritical fluid for cleaning, wherein the cleaning device stores at least the object to be cleaned and a cleaning device for cleaning the same. A first block equipped with a transfer device for loading and unloading an object to be cleaned, a separation tank for separating contaminants from the supercritical fluid, and a recirculation of the supercritical fluid from the separation tank to the cleaning tank. And a second block having a system, the first block is installed in a clean room, the second block is installed outside the clean room, and the first block and the second block are separated. A cleaning device in which the spaces are connected by a pipe through which a supercritical fluid flows.
JP2826892A 1992-02-14 1992-02-14 Cleaning equipment Pending JPH05226311A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2826892A JPH05226311A (en) 1992-02-14 1992-02-14 Cleaning equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2826892A JPH05226311A (en) 1992-02-14 1992-02-14 Cleaning equipment

Publications (1)

Publication Number Publication Date
JPH05226311A true JPH05226311A (en) 1993-09-03

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JP2826892A Pending JPH05226311A (en) 1992-02-14 1992-02-14 Cleaning equipment

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998013149A1 (en) * 1996-09-25 1998-04-02 Shuzurifuresher Kaihatsukyodokumiai Washing means using liquefied gas of high density
US6874513B2 (en) 2001-04-17 2005-04-05 Kabushiki Kaisha Kobe Seiko Sho High pressure processing apparatus
US6880560B2 (en) 2002-11-18 2005-04-19 Techsonic Substrate processing apparatus for processing substrates using dense phase gas and sonic waves
US7080651B2 (en) 2001-05-17 2006-07-25 Dainippon Screen Mfg. Co., Ltd. High pressure processing apparatus and method
WO2007083791A1 (en) * 2006-01-23 2007-07-26 National Institute Of Advanced Industrial Science And Technology Method of liftoff working and liftoff working apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998013149A1 (en) * 1996-09-25 1998-04-02 Shuzurifuresher Kaihatsukyodokumiai Washing means using liquefied gas of high density
US6874513B2 (en) 2001-04-17 2005-04-05 Kabushiki Kaisha Kobe Seiko Sho High pressure processing apparatus
US7080651B2 (en) 2001-05-17 2006-07-25 Dainippon Screen Mfg. Co., Ltd. High pressure processing apparatus and method
US7111630B2 (en) 2001-05-17 2006-09-26 Dainippon Screen Mfg. Co., Ltd. High pressure processing apparatus and method
US6880560B2 (en) 2002-11-18 2005-04-19 Techsonic Substrate processing apparatus for processing substrates using dense phase gas and sonic waves
WO2007083791A1 (en) * 2006-01-23 2007-07-26 National Institute Of Advanced Industrial Science And Technology Method of liftoff working and liftoff working apparatus
JP2007221096A (en) * 2006-01-23 2007-08-30 Ryusyo Industrial Co Ltd Lift-off processing method and lift-off processing apparatus

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