JPH05224098A - Optical coupling circuit and manufacture thereof - Google Patents

Optical coupling circuit and manufacture thereof

Info

Publication number
JPH05224098A
JPH05224098A JP9235A JP3592A JPH05224098A JP H05224098 A JPH05224098 A JP H05224098A JP 9235 A JP9235 A JP 9235A JP 3592 A JP3592 A JP 3592A JP H05224098 A JPH05224098 A JP H05224098A
Authority
JP
Japan
Prior art keywords
fiber
optical
core
coupling circuit
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9235A
Other languages
Japanese (ja)
Inventor
Hiroshi Honmo
宏 本望
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP9235A priority Critical patent/JPH05224098A/en
Publication of JPH05224098A publication Critical patent/JPH05224098A/en
Pending legal-status Critical Current

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  • Optical Couplings Of Light Guides (AREA)
  • Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain an optical coupling circuit in which a coupling of a semicon ductor light emitting element and an optical fiber is high efficient and at a low cost. CONSTITUTION:Fiber 2 with a sphere at the tip in which the core part is projected at a hemisphere form on an optical axis of light beam with 1.55mum wavelength outputted from the semiconductor laser 1, is arranged in close vicinity to a semiconductor laser 1. The fiber with a sphere at the tip is a single mode fiber with a 10mum core diameter and a 125mum outer diameter, and the projected length of the hemisphere core is 10mum and the curvature is about 5mum. A dopant concentration in the core decreases in a nearly square distribution against a distance from the center by thermal diffusion during manufacturing of the fiber. Thus when a flat fiber end face is etched with an etching solution whose etching speed is slower, as the dopant concentration is higher, the fiber 2 with a sphere at the tip in which the core part is projected in a hemisphere form is produced at a lower cost.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体光素子の出力光
を光ファイバに結合するための光通信用の光結合回路と
その製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical coupling circuit for optical communication for coupling the output light of a semiconductor optical device to an optical fiber and a method for manufacturing the same.

【0002】[0002]

【従来の技術】光通信システムにおける信号光源である
半導体発光素子の出力光を光伝送路である光ファイバに
結合される光結合回路は、光通信システムを構成する上
で重要なデバイスの1つである。
2. Description of the Related Art An optical coupling circuit in which an output light of a semiconductor light emitting element which is a signal light source in an optical communication system is coupled to an optical fiber which is an optical transmission line is one of important devices in constructing an optical communication system. Is.

【0003】従来、性能の良い結合回路としては、例え
ばアプライドオプティクス(Applied Opti
cs)1980年、第19巻、p2578の桑原氏によ
る論文に記載された先球ファイバを用いるものがあげら
れる。この光結合回路は、入射端を半球面状にに加工し
た単一モードファイバを半導体レーザの出射端に近接し
て、半導体レーザからの出力光を単一モードファイバへ
結合されるものである。
Conventionally, as a high performance coupling circuit, for example, Applied Optics (Applied Optix) is used.
cs) 1980, Volume 19, p2578, using a spherical fiber described in a paper by Mr. Kuwahara. In this optical coupling circuit, a single mode fiber whose incident end is processed into a hemispherical shape is brought close to the emitting end of a semiconductor laser, and the output light from the semiconductor laser is coupled to the single mode fiber.

【0004】[0004]

【発明が解決しようとする課題】先球ファイバの入射端
の半球状部分を形成するには、一般に、研磨加工が用い
られていた。この研磨工程では、光ファイバの微小な入
射端部を研磨するため、通常の平坦に研磨する工程より
多くの工数を必要とする。これにより、先球ファイバの
価格が高くなるという欠点があった。また更に、複数個
配置した半導体発光素子と光ファイバとを結合させるア
レイ状の光結合回路の場合には、光結合効率を各ファイ
バで同程度にするためにそれぞれの先球ファイバの半球
化された入射端を同一線上に揃える必要がある。このた
め、アレイ状の先球ファイバを作製するためには、半球
化のための研磨工程に加え入射端を揃える配列工程が必
要となり、アレイ状の先球ファイバ端末の価格化が困難
になるという大きな問題があった。
Generally, polishing is used to form the hemispherical portion of the incident end of the front spherical fiber. In this polishing step, since a small incident end portion of the optical fiber is polished, more man-hours are required than in the ordinary flat polishing step. As a result, there is a drawback that the price of the spherical fiber becomes high. Furthermore, in the case of an array-shaped optical coupling circuit that couples a plurality of semiconductor light emitting elements and optical fibers, each of the front spherical fibers is hemispherical in order to make the optical coupling efficiency of each fiber comparable. It is necessary to align the incident ends on the same line. For this reason, in order to manufacture an arrayed front spherical fiber, an arraying process for aligning the incident ends is required in addition to a polishing process for forming a hemisphere, which makes it difficult to price the arrayed front spherical fiber end. There was a big problem.

【0005】[0005]

【課題を解決するための手段】本発明の光結合回路は、
半導体光素子と、前記半導体光素子に面する側の端面の
コアが半球状に形成された光ファイバとを含むことを特
徴とする。光ファイバのコアドーパント濃度が高い程エ
ッチング速度が遅いエッチング液で光ファイバ端面をエ
ッチングし、前記エッチングした光ファイバ端面の表面
上を加熱溶融することによりコアを半球状に形成する。
これにより複雑な研磨工程を必要とせず、半球化工程が
簡略化される。また、並列に複数個、一体化されている
光ファイバの端面を、前記エッチング液でエッチング
し、前記エッチングした光ファイバ端面の表面上を加熱
溶融することにより、前記複数個のコアを一括して半球
状に形成することができ、入射端部の配列工程を排除で
きる。
The optical coupling circuit of the present invention comprises:
It is characterized by including a semiconductor optical element and an optical fiber having a hemispherical core on the end face on the side facing the semiconductor optical element. The higher the core dopant concentration of the optical fiber is, the slower the etching rate is. The optical fiber end face is etched with an etching solution, and the core is formed into a hemispherical shape by heating and melting the surface of the etched optical fiber end face.
This simplifies the hemispherical process without requiring a complicated polishing process. In addition, a plurality of end faces of optical fibers that are integrated in parallel are etched with the etching solution, and the plurality of cores are collectively packaged by heating and melting the surface of the end faces of the etched optical fibers. It can be formed in a hemispherical shape, and the step of arranging the incident ends can be eliminated.

【0006】[0006]

【作用】通常、単一モードファイバのコアの屈折率分布
は、ステップ型を理想とするため、コアドーパント濃度
は、そのコア内でほぼ一定になるように設計する。しか
し、実際にはファイバ作製中の熱拡散などによりコア内
のドーパントは熱拡散し、ドーパント濃度分布は中心部
からの距離に対してほぼ2乗分布で減少するような分布
となる。したがって、ドーパント濃度が高い程エッチン
グ速度が遅いエッチング液で平坦なファイバ端面をエッ
チングすることにより、コア部分が半球状に突出し他の
部分が平坦な先球ファイバが製作できる。その後、エッ
チングしたファイバ端面の表面上を加熱溶融することに
より、コア表面上の荒さを低減でき、半球状コアの収差
を改善できる。これにより光結合の高効率化が計れる。
本発明はエッチングでコアを半球化し、加熱処理するだ
けであるため、工程が従来の研磨工程のように複雑でな
く先球ファイバの低価格化が容易となる。また、アレイ
状に複数個並んだ先球ファイバを作製する場合には、光
ファイバの端面をアレイ状に配列した後に、光ファイバ
入射端面を一括して平坦研磨し、その後、上述のエッチ
ング液により光ファイバ端面をエッチングし、加熱処理
することにより、複数個のコアを一括して半球状に形成
できる。このように、従来のような入射端部の配列工程
を必要とせず、先端が揃ったアレイ状の先球ファイバが
容易に作製できる。
In general, the refractive index distribution of the core of a single-mode fiber is ideally a step type, so the core dopant concentration is designed to be substantially constant within the core. However, in reality, the dopant in the core is thermally diffused due to thermal diffusion during fiber production, and the dopant concentration distribution has a distribution that decreases as a square distribution with respect to the distance from the center. Therefore, by etching the flat end face of the fiber with an etching solution having a slower etching rate as the dopant concentration is higher, it is possible to manufacture a front spherical fiber in which the core portion protrudes in a hemispherical shape and the other portions are flat. After that, by heating and melting the surface of the etched fiber end face, the roughness on the core surface can be reduced and the aberration of the hemispherical core can be improved. As a result, the efficiency of optical coupling can be improved.
According to the present invention, since the core is hemispherical by etching and only heat treatment is performed, the process is not complicated as in the conventional polishing process, and the cost of the front spherical fiber can be easily reduced. Further, in the case of manufacturing a plurality of front spherical fibers arranged in an array, after arranging the end faces of the optical fibers in an array, the optical fiber incident end faces are collectively polished flat, and then the above-mentioned etching solution is used. By etching the end face of the optical fiber and subjecting it to heat treatment, a plurality of cores can be collectively formed into a hemispherical shape. As described above, the arrayed front-end fibers having uniform tips can be easily manufactured without requiring the step of arranging the incident ends as in the prior art.

【0007】[0007]

【実施例】以下、本発明について、図面を参照して説明
する。図1は、本発明の第1の実施例を示す断面図であ
る。半導体レーザ1から出力される波長1.55μmの
光ビームの光軸上にコア部が半球上に突出した先球ファ
イバ2が半導体レーザ1に近接して配置されている。こ
こで、先球ファイバ2はコア径10μm、外径125μ
mの単一モードファイバであり、半球化されたコアの突
き出し量は10μm、先端部の曲率半径は約5μmであ
る。半導体レーザ1と先球ファイバ2との間の距離は約
10μmである。半導体レーザ1は熱放出を行うためヒ
ートシンク3上に固着されている。単一モードファイバ
入射端のコアを半球状にエッチングするためのエッチン
グ液は、49%濃度のフッ酸(HF)と40%濃度のフ
ッ化アンモニウム(NH4 F)を1対10の重量比で混
合したものでいわゆる暖衝フッ酸といわれているものの
一種である。本実施例のコア突き出し量10μmを得る
ためのエッチング時間は室温で約3時間である。(図2
参照)。本発明では、コア半球状に形成する方法とし
て、エッチングする方法を用いるので、従来の研磨工程
のように複雑でなく容易にコア半球化が可能である。な
おエッチング時間はエッチング液の温度を上げることで
短くできるため、上記のエッチング時間を短くし、更に
作業能率を上げるのは容易である。また、エッチング液
も上記のものに限定する必要はなく、ドーパント濃度が
高い程エッチング速度が遅いエッチング液であれば良
い。例えば前述のHFとNH4 Fの重量比を2対10や
3対10に変えたものや、硝酸を加えて硝酸とHFとN
4 Fの重量比を1対1対10にしたもの等でもよい。
硝酸を加えるとエッチング面がより滑らかになる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a first embodiment of the present invention. A front spherical fiber 2 having a core portion protruding in a hemisphere on the optical axis of a light beam having a wavelength of 1.55 μm output from the semiconductor laser 1 is arranged close to the semiconductor laser 1. Here, the spherical fiber 2 has a core diameter of 10 μm and an outer diameter of 125 μm.
It is a single mode fiber of m, and the protrusion amount of the hemispherical core is 10 μm, and the radius of curvature of the tip is about 5 μm. The distance between the semiconductor laser 1 and the front spherical fiber 2 is about 10 μm. The semiconductor laser 1 is fixed on the heat sink 3 to emit heat. The etching solution for hemispherically etching the core of the single mode fiber entrance end is 49% hydrofluoric acid (HF) and 40% ammonium fluoride (NH 4 F) in a weight ratio of 1:10. It is a mixture of so-called warm shock hydrofluoric acid. The etching time for obtaining the core protrusion amount of 10 μm in this embodiment is about 3 hours at room temperature. (Fig. 2
reference). In the present invention, since the method of etching is used as the method of forming the core hemisphere, the core hemisphere can be easily formed without being complicated as in the conventional polishing process. Since the etching time can be shortened by increasing the temperature of the etching solution, it is easy to shorten the above etching time and further increase the work efficiency. Also, the etching solution is not limited to the above-mentioned one, and an etching solution having a slower etching rate as the dopant concentration is higher may be used. For example, the weight ratio of HF and NH 4 F is changed to 2:10 or 3:10, or nitric acid is added to add nitric acid, HF and N.
For example, the weight ratio of H 4 F may be 1: 1: 10.
When nitric acid is added, the etched surface becomes smoother.

【0008】次に、エッチングした光ファイバ端面を放
電により表面を加熱溶融する。
Next, the etched end surface of the optical fiber is heated and melted by discharging.

【0009】上述のような構成で半導体レーザ1から出
力された光ビームは、半球状に形成されたコアに結合さ
れる。本実施例では結合損失3dBと従来と同程度の高
効率結合の光結合回路が得られた。
The light beam output from the semiconductor laser 1 having the above-mentioned structure is coupled to the hemispherical core. In this embodiment, an optical coupling circuit having a coupling loss of 3 dB and a coupling efficiency as high as the conventional one was obtained.

【0010】図3は本実施例の第2の実施例を示す4チ
ャンネルのアレイ光結合回路の平面図である。4つの半
導体レーザ1a〜1dがピッチ250μmで並列にヒー
トシンク3上に固着され、一体化されている。また4本
の先球ファイバ2a〜2dがピッチ250μmで、シリ
コン(Si)基板4表面に形成したV溝内にそれぞれ固
着、一体化されている。V溝は異方性エッチングで形成
する。尚、先球ファイバ2a〜2dの形状寸法は第1の
実施例の場合と同様である。上記のアレイ状の先球ファ
イバ2a〜2dを作製する方法は、まず、4本の単一モ
ードファイバをそれぞれ上記のシリコン基板表面上のV
溝内に配置、固着し、次に単一モードファイバの入射端
面を一括して平坦に研磨する。その後、平坦な入射端面
を第1の実施例で用いたエッチング液でエッチングし、
コアを一括して半球状に形成する。
FIG. 3 is a plan view of a 4-channel array optical coupling circuit showing a second embodiment of this embodiment. The four semiconductor lasers 1a to 1d are fixed in parallel on the heat sink 3 at a pitch of 250 μm and integrated. Further, four spherical fibers 2a to 2d are fixed and integrated in a V groove formed on the surface of the silicon (Si) substrate 4 with a pitch of 250 μm. The V groove is formed by anisotropic etching. The shape and dimensions of the spherical fibers 2a to 2d are the same as those in the first embodiment. In the method of producing the above-mentioned arrayed front spherical fibers 2a to 2d, first, four single-mode fibers are respectively formed on the surface of the silicon substrate by V.
It is arranged and fixed in the groove, and then the incident end face of the single mode fiber is collectively polished flat. After that, the flat incident end face is etched with the etching solution used in the first embodiment,
The core is collectively formed into a hemispherical shape.

【0011】次に、エッチングした光ファイバ端面を放
電により表面を加熱溶融する。このように、先端が揃っ
た平坦面上のコアを複数個一括して半球状に形成できる
ため、従来のような入射端部の配列工程を必要とせず、
アレイ状の先球ファイバの低価格化が容易となる。
Then, the etched end surface of the optical fiber is heated and melted by discharging. In this way, since it is possible to collectively form a plurality of cores on a flat surface with aligned tips into a hemispherical shape, the step of arranging the incident ends unlike the conventional case is required,
It becomes easy to reduce the cost of arrayed spherical fibers.

【0012】さて、上述の構成で半導体レーザ1a〜1
dから出力された光ビームは、半球状に形成されたコア
にそれぞれ結合される。本実施例で4チャンネル共に結
合損失3dBと従来と同程度の高効率結合のアレイ光結
合回路が得られた。
Now, with the above-mentioned structure, the semiconductor lasers 1a-1a
The light beams output from d are respectively coupled to hemispherical cores. In this embodiment, an array optical coupling circuit having a coupling loss of 3 dB for all four channels and a high efficiency coupling similar to the conventional one was obtained.

【0013】以上、2つの実施例では先球ファイバとし
て単一モードファイバを用いたがこれに限定されず、コ
アドーパント濃度が集束型分布である集束型多モードフ
ァイバでも同様の効果が得られる。
As described above, the single mode fiber is used as the front spherical fiber in the two embodiments, but the present invention is not limited to this, and a similar effect can be obtained even with a focused multimode fiber having a focused distribution of core dopant concentration.

【0014】また、加熱溶融の手段として放電による熱
を用いたが、これに限定されず、例えば、電気炉内に加
熱溶融しても良いのは当然である。
Although the heat generated by the discharge is used as the means for heating and melting, the present invention is not limited to this, and it goes without saying that it may be heated and melted in an electric furnace.

【0015】また、光反射特性を向上させるため、半球
化したコア表面上に無反射コートを施しても良い。
Further, in order to improve the light reflection characteristics, a non-reflective coating may be applied on the surface of the hemispherical core.

【0016】また、半導体光素子として半導体レーザ1
を用いたが、LED等他の半導体発光素子や半導体光増
幅素子等でも良く、この場合、先球ファイバ2を半導体
光増幅素子の入出力側にそれぞれ配置すれば良い。
A semiconductor laser 1 is used as a semiconductor optical device.
However, other semiconductor light emitting elements such as LEDs or semiconductor optical amplifier elements may be used. In this case, the front spherical fiber 2 may be arranged on the input / output side of the semiconductor optical amplifier element.

【0017】また、第2の実施例ではチャンネル数を4
としたがこれに限定されず、4チャンネル以上に用いて
も良い。
In the second embodiment, the number of channels is 4
However, the present invention is not limited to this and may be used for four or more channels.

【0018】[0018]

【発明の効果】以上述べた通り、半導体発光素子と光フ
ァイバとの結合が高効率で、製造コストがきわめて低価
格の光結合回路が得られる。
As described above, it is possible to obtain an optical coupling circuit in which the semiconductor light emitting element and the optical fiber are highly efficiently coupled and the manufacturing cost is extremely low.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を示す概略図である。FIG. 1 is a schematic diagram showing a first embodiment of the present invention.

【図2】エッチング時間とコア突き出し量の関係を示す
関係図である。
FIG. 2 is a relationship diagram showing a relationship between an etching time and a core protrusion amount.

【図3】本発明の第2の実施例を示す平面図ある。FIG. 3 is a plan view showing a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1、1a〜1d 半導体レーザ 2、2a〜2d 先球ファイバ 3 ヒートシンク 4 シリコン基板 1, 1a to 1d Semiconductor laser 2, 2a to 2d Front spherical fiber 3 Heat sink 4 Silicon substrate

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体光素子と、この半導体光素子に面
する側の端面のコアが半球状に形成された光ファイバと
を含むことを特徴とする光結合回路。
1. An optical coupling circuit comprising: a semiconductor optical element; and an optical fiber having a hemispherical core on the end face facing the semiconductor optical element.
【請求項2】 光ファイバのコアドーパント濃度が高い
程エッチング速度が遅いエッチング液で光ファイバ端面
をエッチングする工程と前記エッチングした光ファイバ
端面の表面上を加熱溶融する工程とを含むことを特徴と
する光結合回路の製造方法。
2. A step of etching the end face of the optical fiber with an etching solution having a slower etching rate as the core dopant concentration of the optical fiber is higher, and a step of heating and melting the surface of the end face of the optical fiber etched. Method for manufacturing optical coupling circuit.
【請求項3】 半導体光素子、前記光ファイバがそれぞ
れ並列に複数個、一体化されている請求光1に記載のア
レイ光結合回路。
3. The array optical coupling circuit according to claim 1, wherein a plurality of semiconductor optical devices and a plurality of the optical fibers are integrated in parallel.
【請求項4】 並列に複数個、一体化されている光ファ
イバの端面を、コアドーパンド濃度が高い程エッチング
速度が遅いエッチング液でエッチングし、前記エッチン
グした光ファイバ端面の表面上を加熱溶融することによ
り、前記複数個のコアを一括して半球状に形成すること
を特徴とするアレイ光結合回路の製造方法。
4. An end face of a plurality of optical fibers integrated in parallel is etched with an etching solution having a slower etching rate as the core dopant concentration is higher, and the surface of the etched end face of the optical fiber is heated and melted. A method of manufacturing an array optical coupling circuit, wherein the plurality of cores are collectively formed into a hemispherical shape.
JP9235A 1992-01-06 1992-01-06 Optical coupling circuit and manufacture thereof Pending JPH05224098A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9235A JPH05224098A (en) 1992-01-06 1992-01-06 Optical coupling circuit and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9235A JPH05224098A (en) 1992-01-06 1992-01-06 Optical coupling circuit and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH05224098A true JPH05224098A (en) 1993-09-03

Family

ID=11463086

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563969A (en) * 1994-05-23 1996-10-08 Nec Corporation Apparatus and method for forming a hemispherical microlens at the end of optical fiber
US5662817A (en) * 1994-06-28 1997-09-02 Nec Corporation Method for forming tip of array optical fiber using etching process
US5877853A (en) * 1996-04-02 1999-03-02 Nec Corporation Method of evaluating an optical transmission path
JP2007518137A (en) * 2004-01-08 2007-07-05 イン エス. タン Manufacturing method of microlens array

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563969A (en) * 1994-05-23 1996-10-08 Nec Corporation Apparatus and method for forming a hemispherical microlens at the end of optical fiber
US5662817A (en) * 1994-06-28 1997-09-02 Nec Corporation Method for forming tip of array optical fiber using etching process
US5877853A (en) * 1996-04-02 1999-03-02 Nec Corporation Method of evaluating an optical transmission path
JP2007518137A (en) * 2004-01-08 2007-07-05 イン エス. タン Manufacturing method of microlens array

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