JPH05218478A - Manufacture of photoelectric conversion device - Google Patents
Manufacture of photoelectric conversion deviceInfo
- Publication number
- JPH05218478A JPH05218478A JP4021480A JP2148092A JPH05218478A JP H05218478 A JPH05218478 A JP H05218478A JP 4021480 A JP4021480 A JP 4021480A JP 2148092 A JP2148092 A JP 2148092A JP H05218478 A JPH05218478 A JP H05218478A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound semiconductor
- constituent element
- conductivity type
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】異種の化合物半導体間の接合を用
いて光を電気エネルギーに変換する光電変換装置の製造
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photoelectric conversion device for converting light into electric energy by using a junction between different kinds of compound semiconductors.
【０００２】[0002]
【従来の技術】化合物半導体のヘテロ接合を用いた光電
変換装置としては、ガラス基板の上にMo電極層を形成
し、その上にｐ型のCuInSe2 あるいはCuInGaSe2 等の化
合物半導体を積層し、さらにその上にCdＳ、CdZnＳ、Zn
Ｓ、ZnSeあるいはZnＯ等の光学バンドギャップの広いｎ
型半導体を形成し、これに取り出し電極を取り付けて光
電変換を行うものが知られている。また、ガラス基板上
に透明電極を形成し、その上にCdＳ、CdZnＳ、ZnＳ、Zn
SeあるいはZnＯ等の光学バンドギャップの広いｎ型半導
体を形成し、さらにその上にｐ型のCuInSe2 あるいはCu
InGaSe2 等の化合物半導体を積層し、裏面電極を形成し
て光電変換を行うものが知られている。 2. Description of the Related Art As a photoelectric conversion device using a heterojunction of compound semiconductors, a Mo electrode layer is formed on a glass substrate, and a compound semiconductor such as p-type CuInSe 2 or CuInGaSe 2 is laminated thereon, On top of that, CdS, CdZnS, Zn
N with a wide optical bandgap such as S, ZnSe or ZnO
It is known that a type semiconductor is formed, and an extraction electrode is attached to the type semiconductor to perform photoelectric conversion. In addition, a transparent electrode is formed on the glass substrate, and CdS, CdZnS, ZnS, Zn are formed on the transparent electrode.
An n-type semiconductor with a wide optical band gap such as Se or ZnO is formed, and p-type CuInSe 2 or Cu is further formed on the n-type semiconductor.
It is known to stack compound semiconductors such as InGaSe 2 and form a back electrode to perform photoelectric conversion.
【０００３】[0003]
【発明が解決しようとする課題】これらの技術の問題点
の一つは、異種化合物間の元素拡散である。特に、CdＳ
等のCdを構成元素とする化合物半導体層の上にCuInSe2
等のCuを構成元素とする化合物半導体を形成する場合に
はCuのCdＳ中への拡散が、逆に積層する場合にはCdのCu
InSe2 等のCuを構成元素とする化合物半導体層中への拡
散が著しく、これが半導体の接合に影響を与え開放電圧
の低下が問題となっていた。One of the problems of these techniques is element diffusion between different kinds of compounds. In particular, CdS
Of CuInSe 2 on the compound semiconductor layer containing Cd as a constituent element such as
When a compound semiconductor having Cu as a constituent element such as Cu is formed, diffusion of Cu into CdS occurs, and in the case of stacking in reverse, Cu of Cd Cu
Diffusion into a compound semiconductor layer containing Cu such as InSe 2 as a constituent element is remarkable, which affects the junction of the semiconductor and causes a decrease in open circuit voltage.
【０００４】これらの問題を解決するための本発明の目
的は、異種半導体間の接合における拡散を防止して特性
の高い光電変換装置を製造する方法を提供することにあ
る。An object of the present invention to solve these problems is to provide a method of manufacturing a photoelectric conversion device having high characteristics by preventing diffusion at the junction between different kinds of semiconductors.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の光電変換装置の製造方法は、基板上に電
極層を介して第一導電型でCuを構成元素とする化合物半
導体層、ZnIn2 Se4 あるいはZnIn2 Te4 よりなる中間層
および第二導電型のCdを構成元素とする化合物半導体層
を順次積層し、その上に透明電極層を設けるものとす
る。あるいは、透明基板上に透明電極層を介して第二導
電型でCdを構成元素とする化合物半導体層、ZnIn2 Se4
あるいはZnIn2 Te4 よりなる中間層および第一導電型で
Cuを構成元素とする化合物半導体層を順次積層し、その
上に電極層を設けるものとする。また、基板上に透明電
極層を介して第二導電型でCdを構成元素とする化合物半
導体層、CdIn2 Se4 あるいはCdIn2 Te4 よりなる中間層
および第一導電型でCuを構成元素とする化合物半導体層
を順次積層し、その上に電極層を設けてもよい。そし
て、第一導電型がｐ型、第二導電型がｎ型で、Cuを構成
元素とする化合物半導体がCuInSe2 であること、あるい
はCdを構成元素とする化合物半導体がCdＳであることが
有効である。In order to achieve the above object, a method of manufacturing a photoelectric conversion device according to the present invention is a compound semiconductor having Cu as a constituent element of the first conductivity type on a substrate through an electrode layer. A layer, an intermediate layer made of ZnIn 2 Se 4 or ZnIn 2 Te 4 and a compound semiconductor layer having a second conductivity type Cd as a constituent element are sequentially laminated, and a transparent electrode layer is provided thereon. Alternatively, a second-conductivity-type compound semiconductor layer containing Cd as a constituent element, ZnIn 2 Se 4 on a transparent substrate via a transparent electrode layer.
Or an intermediate layer of ZnIn 2 Te 4 and a first conductivity type
A compound semiconductor layer containing Cu as a constituent element is sequentially stacked, and an electrode layer is provided thereon. In addition, a compound semiconductor layer having Cd as a constituent element of the second conductivity type through the transparent electrode layer on the substrate, an intermediate layer made of CdIn 2 Se 4 or CdIn 2 Te 4 and Cu as a constituent element of the first conductivity type. The compound semiconductor layers may be sequentially laminated, and the electrode layer may be provided thereon. It is effective that the first conductivity type is p-type, the second conductivity type is n-type, and the compound semiconductor having Cu as a constituent element is CuInSe 2 or the compound semiconductor having Cd as a constituent element is CdS. Is.
【０００６】[0006]
【作用】半導体接合間にZnIn2 Se4 層あるいはZnIn2 Te
4 層を挿入することによりCu、Cdの拡散が防止される。
また、CdIn2 Se4 層あるいはCdIn2 Te4 層を挿入するこ
とによりCuの拡散が防止される。[Operation] ZnIn 2 Se 4 layer or ZnIn 2 Te layer between semiconductor junctions
Cu and Cd diffusion is prevented by inserting 4 layers.
Further, Cu is prevented from diffusing by inserting a CdIn 2 Se 4 layer or a CdIn 2 Te 4 layer.
【０００７】[0007]
【実施例】図１は本発明の一実施例により製造された太
陽電池の断面図を示す。この太陽電池を製造するにはガ
ラス基板１上に透明電極２を形成し、その上にｎ型CdＳ
層３とｐ型ZnIn2 Se4 層４を順次成膜する。この中間層
のZnIn2 Se4 層４の上にさらにｐ型CuInSe2 層５および
裏面金属電極６を順次積層することにより電池は完成す
る。図２はこの電池のバンド図を示し、ZnIn2 Se4 は1.
８eVのバンド幅をもつためこの層での吸収ロスは少な
い。また、中間層のバンド幅を広くしたことにより、不
純物拡散防止のほかにも開放電圧向上の効果もある。EXAMPLE FIG. 1 is a sectional view of a solar cell manufactured according to an example of the present invention. To manufacture this solar cell, a transparent electrode 2 is formed on a glass substrate 1 and n-type CdS is formed on the transparent electrode 2.
The layer 3 and the p-type ZnIn 2 Se 4 layer 4 are sequentially formed. The battery is completed by sequentially stacking the p-type CuInSe 2 layer 5 and the backside metal electrode 6 on the intermediate layer ZnIn 2 Se 4 layer 4. Figure 2 shows the band diagram of this battery, ZnIn 2 Se 4 is 1.
Since it has a bandwidth of 8 eV, the absorption loss in this layer is small. In addition, widening the band width of the intermediate layer has the effect of improving the open circuit voltage as well as preventing diffusion of impurities.
【０００８】図３はこのZnIn2 Se4 層４の膜厚を変化さ
せた場合の電池特性の変化を示す。図より50Åから開放
電圧の向上がみられ200 Å以上で0.45Ｖ以上の開放電圧
を持つことがわかる。膜厚が１μｍを越えると曲線因子
が低下するのは、この層のキャリア拡散長による。従っ
てZnIn2 Se4 層４の膜厚は50Åないし１μｍの範囲がよ
い。FIG. 3 shows changes in battery characteristics when the film thickness of the ZnIn 2 Se 4 layer 4 is changed. From the figure, it can be seen that the open-circuit voltage is improved from 50 Å and that it has an open-circuit voltage of 0.45 V or higher at 200 Å or higher. The fill factor decreases when the film thickness exceeds 1 μm because of the carrier diffusion length of this layer. Therefore, the film thickness of the ZnIn 2 Se 4 layer 4 is preferably in the range of 50Å to 1 μm.
【０００９】図４は図１の太陽電池のCuInSe2 層５を２
層に分離し、裏面電極６の側にｐ+層51を設けたことを
特徴とする。また、この場合にCuInSe2 層の膜厚を0.５
μｍから1.５μｍにすると開放電圧がさらに向上する。
これは、CuInSe2 層内部での再結合の減少による。以上
の実施例では中間層にZnIn2 Se4 を用いたがZnIn2 T
e4 、CdIn2 Se4 、CdIn2 Te4 を用いても同様にCuInSe
2 層成膜時のCu拡散防止の効果が得られる。FIG. 4 shows the CuInSe 2 layer 5 of the solar cell of FIG.
It is characterized in that the p + layer 51 is provided on the side of the back electrode 6 separated into layers. In addition, in this case, the film thickness of the CuInSe 2 layer is 0.5
When the thickness is changed from μm to 1.5 μm, the open circuit voltage is further improved.
This is due to the reduction of recombination inside the CuInSe 2 layer. In the above examples, ZnIn 2 Se 4 was used for the intermediate layer, but ZnIn 2 T
Even if e 4 , CdIn 2 Se 4 , and CdIn 2 Te 4 are used, CuInSe
The effect of preventing Cu diffusion during double- layer film formation can be obtained.
【００１０】図５は基板１と反対側から光を入射させる
太陽電池の例で、ガラス基板１の上にMo電極７を形成
し、その上にｐ型CuInSe2 層５、ZnIn2 Se4 層４、ｎ型
CdＳ層３、透明電極２を順次積層し、透明電極２の上の
一部に集電電極８を形成したものである。この場合もZn
In2 Se4 層がCdＳ層３成膜時のCuInSe2 層５の中へのCd
の拡散を防止するので、同様に開放電圧の向上が見られ
る。なお、ZnIn2 Se4 の代わりにZnIn2 Te4 を用いるこ
ともできる。FIG. 5 shows an example of a solar cell in which light is incident from the side opposite to the substrate 1. A Mo electrode 7 is formed on the glass substrate 1, and a p-type CuInSe 2 layer 5 and a ZnIn 2 Se 4 layer are formed thereon. 4, n type
The CdS layer 3 and the transparent electrode 2 are sequentially laminated, and the collector electrode 8 is formed on a part of the transparent electrode 2. Again, Zn
In 2 Se 4 layer is Cd in CuInSe 2 layer 5 when CdS layer 3 is formed
Since the diffusion is prevented, the open circuit voltage is similarly improved. Note that ZnIn 2 Te 4 can be used instead of ZnIn 2 Se 4 .
【００１１】[0011]
【発明の効果】本発明によれば、積層成膜時の接合界面
を通しての拡散を中間層の挿入により防止することによ
り、化合物半導体を用いた太陽電池のような光電変換装
置の特性を向上させることができた。According to the present invention, it is possible to improve the characteristics of a photoelectric conversion device such as a solar cell using a compound semiconductor by preventing the diffusion through the bonding interface at the time of stacking film formation by inserting the intermediate layer. I was able to.
【図１】本発明の一実施例による太陽電池の断面図FIG. 1 is a sectional view of a solar cell according to an embodiment of the present invention.
【図２】図１の太陽電池のバンド図FIG. 2 is a band diagram of the solar cell of FIG.
【図３】図１の太陽電池の特性と中間層の膜厚との関係
線図FIG. 3 is a relationship diagram of characteristics of the solar cell of FIG. 1 and film thickness of an intermediate layer.
【図４】本発明の別の実施例による太陽電池の断面図FIG. 4 is a sectional view of a solar cell according to another embodiment of the present invention.
【図５】本発明のさらに別の実施例による太陽電池の断
面図FIG. 5 is a sectional view of a solar cell according to still another embodiment of the present invention.
１ ガラス基板 ２ 透明電極 ３ ｎ型CdＳ層 ４ ZnSe2 Te4 層 ５ ｐ型CuInSe2 層 ６ 金属電極 ７ Mo電極1 glass substrate 2 transparent electrode 3 n-type CdS layer 4 ZnSe 2 Te 4 layer 5 p-type CuInSe 2 layer 6 metal electrode 7 Mo electrode
Claims (5)
構成元素とする化合物半導体層、ZnIn2 Se4 あるいはZn
In2 Te4 よりなる中間層および第二導電型でCdを構成元
素とする化合物半導体層を順次積層し、その上に透明電
極層を設けることを特徴とする光電変換装置の製造方
法。1. A compound semiconductor layer of the first conductivity type containing Cu as a constituent element, ZnIn 2 Se 4 or Zn on a substrate through an electrode layer.
A method for manufacturing a photoelectric conversion device, which comprises sequentially stacking an intermediate layer made of In 2 Te 4 and a compound semiconductor layer having a second conductivity type and Cd as a constituent element, and providing a transparent electrode layer thereon.
型でCdを構成要素とする化合物半導体層、ZnIn2 Se4 あ
るいはZnIn2 Te4 よりなる中間層および第一導電型でCu
を構成元素とする化合物半導体層を順次積層し、その上
に電極層を設けることを特徴とする光電変換装置の製造
方法。2. A compound semiconductor layer having a second conductivity type and having Cd as a constituent element, an intermediate layer made of ZnIn 2 Se 4 or ZnIn 2 Te 4 and a first conductivity type Cu on a transparent substrate through a transparent electrode layer.
A method for manufacturing a photoelectric conversion device, comprising: sequentially laminating compound semiconductor layers each having a constituent element, and providing an electrode layer thereon.
型でCdを構成要素とする化合物半導体層、CdIn2 Se4 あ
るいはCdIn2 Te4 よりなる中間層および第一導電型でCu
を構成元素とする化合物半導体層を順次積層し、その上
に電極層を設けることを特徴とする光電変換装置の製造
方法。3. A compound semiconductor layer having Cd as a constituent element of the second conductivity type, an intermediate layer made of CdIn 2 Se 4 or CdIn 2 Te 4 and a Cu of the first conductivity type on a transparent substrate through a transparent electrode layer.
A method for manufacturing a photoelectric conversion device, comprising: sequentially laminating compound semiconductor layers each having a constituent element, and providing an electrode layer thereon.
Cuを構成元素とする化合物半導体がCuInSe2 である請求
項１、２あるいは３記載の光電変換装置の製造方法。4. The first conductivity type is p-type and the second conductivity type is n-type,
The method for manufacturing a photoelectric conversion device according to claim 1, 2 or 3, wherein the compound semiconductor having Cu as a constituent element is CuInSe 2 .
Cdを構成元素とする化合物半導体がCdＳである請求項１
ないし４のいずれかに記載の光電変換装置の製造方法。5. The first conductivity type is p-type and the second conductivity type is n-type,
The compound semiconductor having Cd as a constituent element is CdS.
5. The method for manufacturing a photoelectric conversion device according to any one of 4 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4021480A JPH05218478A (en) | 1992-02-07 | 1992-02-07 | Manufacture of photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4021480A JPH05218478A (en) | 1992-02-07 | 1992-02-07 | Manufacture of photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05218478A true JPH05218478A (en) | 1993-08-27 |
Family
ID=12056141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4021480A Pending JPH05218478A (en) | 1992-02-07 | 1992-02-07 | Manufacture of photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05218478A (en) |
-
1992
- 1992-02-07 JP JP4021480A patent/JPH05218478A/en active Pending
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