JPH05211357A - Resistance controlling method of resistor element - Google Patents

Abstract

PURPOSE:To provide a method of controlling a resistor element in resistance, which is able to accurately determine a junction resistance between a wiring metal and a resistor element thin film. CONSTITUTION:Aluminum wiring metals 9 are arranged on a P-type semiconductor substrate 1, and the ends of the wiring metal 9 are formed in slant in cross section. A ferromagnetic magnetoresistive element thin film 10 is provided extending from a slant 9a inclined in cross section. Letting the junction resistivity between the aluminum wiring metal 9 and the thin film 10 be rhoc, the angle of inclination of the slope 9a of the aluminum wiring metal 9 be theta, the thickness of a thinner one out of the aluminum wiring metals 9 and the thin film 10 at a contact between the wiring metal 9 and the thin film 10 be t, and the length of the contact be L, the junction resistance Rc between the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 is determined by a formula, Rc=rhoc.sintheta/(t.L).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistance adjusting method for a resistance element.

[0002]

2. Description of the Related Art Conventionally, in a magnetic detection device, Japanese Patent Laid-Open No.
As disclosed in Japanese Patent Laid-Open No. 4-125882, as a method of electrically connecting a thin film wiring metal formed on a substrate and a ferromagnetic magnetoresistive element thin film, a tilt angle of the thin film wiring metal is set to 78.
The ferromagnetic magnetoresistive element thin film is formed and connected directly thereon. By doing so, the step coverage is improved and the disconnection failure is reduced.

[0003]

However, it has been unclear how to determine the junction resistance value between the aluminum-based thin film wiring metal and the nickel-based ferromagnetic magnetoresistive element thin film. That is, the junction resistance between the metal film (aluminum layer wiring) varies depending on the junction area, the junction resistance Rc is the junction resistivity [rho _c, and the area of the joint and A, Rc = ρ _c / A In the case of using an aluminum-based thin film wiring metal having a slanted section and a nickel-based ferromagnetic magnetoresistive element thin film, it does not depend on the area A of the junction.

Therefore, an object of the present invention is to provide a resistance adjusting method for a resistance element which can accurately determine a junction resistance value between a wiring metal and a resistance element thin film.

[0005]

According to the present invention, an aluminum-based wiring metal whose end portion is formed in a slanted cross section is arranged on a substrate, and a nickel series resistive element thin film is extended from the slanted cross section. In the resistance element, the junction resistivity between the aluminum-based wiring metal and the nickel-based resistance element thin film is ρ _c , the inclination angle of the oblique section of the aluminum-based wiring metal is θ, the aluminum-based wiring metal and the nickel-based resistance. When the thinner one of the aluminum-based wiring metal and the nickel-based resistance element thin film at the contact portion of the element thin film is t and the length of the contact portion is L, the aluminum-based wiring metal and the nickel-based resistance element thin film are Junction resistance Rc
Is the method of adjusting the resistance of the resistance element, which is determined by Rc = ρ _c · sin θ / (t · L).

Further, when the nickel-based resistance element thin film is formed on the aluminum-based wiring metal by using a vacuum deposition method, the aluminum-based wiring metal and the nickel-based resistance element thin film are joined in two or more directions. It is good to place it in the closed state.

[0007]

[Function] When the resistance of the resistance element is adjusted, the junction resistivity of the aluminum-based wiring metal and the nickel-based resistance element thin film is ρ _c ,
The inclination angle of the oblique section of the aluminum-based wiring metal is θ, and the thinner one of the aluminum-based wiring metal and the nickel-based resistance element thin film at the contact portion between the aluminum-based wiring metal and the nickel-based resistance element thin film is t. , Where the length of the contact portion is L, the joint resistance Rc between the aluminum-based wiring metal and the nickel-based resistance element thin film Rc
Is determined by Rc = ρ _c · sin θ / (t · L).

Further, when the nickel-based resistance element thin film is placed on the aluminum-based wiring metal, if the aluminum-based wiring metal and the nickel-based resistance element thin film are joined in two or more directions using a vacuum deposition method, Even if the incident angle of the nickel-based resistance element thin film varies during vapor deposition, there is at least one direction in which the necking of the nickel-based resistance element thin film does not occur.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is embodied in a magnetic sensor will be described below with reference to the drawings. FIG. 1 is a sectional view of a magnetic sensor in which a ferromagnetic magnetoresistive element thin film 10 and a signal processing circuit are integrated on the same substrate. Further, FIG. 2 shows an enlarged view of the D portion of FIG. 1, and FIG. 3 shows a plan view of the D portion.

4 to 7 show the manufacturing process. First, as shown in FIG. 4, a vertical NPN bipolar transistor is formed on the main surface of a P-type semiconductor substrate (silicon substrate) 1 by using a known semiconductor processing technique. That is, P
The N ⁺ type buried layer 2 and the N ⁻ type epitaxial layer 3 are formed on the main surface of the type semiconductor substrate 1. Then, a silicon oxide film 4 is formed on the main surface of the N ⁻ type epitaxial layer 3 by a thermal oxidation method, the silicon oxide film 4 is photoetched by a desired circuit pattern, and a P ⁺ type element isolation region is formed by diffusion of impurities. 5, P ⁺ type diffusion region 6, N ⁺ type diffusion region 7,
8 is formed. That is, phosphorus is selectively formed for N ^{+ and} boron is selectively formed for P ⁺ by an ion implantation method or a diffusion method. In this way, the vertical NPN bipolar transistor is constituted by the N ⁺ type buried layer 2, the N ⁻ type epitaxial layer 3, the P ⁺ type diffusion region 6, and the N ⁺ type diffusion regions 7 and 8, which will be described later. The signal from the ferromagnetic magnetoresistive element thin film 10 is amplified.

Next, the opening 4a is selectively opened in the silicon oxide film 4 by photolithography to form a contact portion. Then, as shown in FIG. 5, thin-film aluminum wiring metal 9 is deposited on the main surface of P-type semiconductor substrate 1 by vapor deposition or sputtering, and this aluminum wiring metal 9 is patterned by photoetching. At this time, the cross section of the end portion of the aluminum wiring metal 9 is processed into an inclined shape (tapered shape) having an inclination angle θ of 80 ° or less (in the figure, the inclined portion is indicated by 9a). After that, an ohmic contact between the aluminum wiring metal 9 and the circuit element (silicon) is performed by a heat treatment process (alloying treatment is performed). At this time, an oxide layer is formed on the surface of the aluminum wiring metal 9.

Subsequently, the P-type semiconductor substrate 1 is placed in a vacuum container, and the oxide layer on the surface of the aluminum wiring metal 9 is removed by etching by plasma etching with an inert gas (eg, Ar gas). After that, as shown in FIG. 6, the ferromagnetic magnetoresistive element thin film 10 is deposited by electron beam vacuum evaporation in the same vacuum container while maintaining the vacuum. Therefore, an oxide layer does not exist at the interface between the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10, resulting in a metal junction. This ferromagnetic magnetoresistive element thin film 10 uses a Ni—Co thin film, and the ferromagnetic magnetoresistive element thin film 10 is thinner than the aluminum wiring metal 9 (see FIG. 2).

Then, as shown in FIG. 7, the ferromagnetic magnetoresistive element thin film 10 is etched into a desired bridge pattern by photoetching. At this time, the ferromagnetic magnetoresistive element thin film 10 and the aluminum wiring metal 9 sufficiently overlap the ferromagnetic magnetoresistive element thin film 10 with the slanted portion 9a of the aluminum wiring metal 9 as shown in FIG. This slanted portion 9a
Thus, the ferromagnetic magnetoresistive element thin film 10 and the aluminum wiring metal 9 are electrically connected.

At this time, the ferromagnetic magnetoresistive element thin film 10 functioning as a magnetic sensor is formed on the silicon oxide film 4, and the ferromagnetic magnetoresistive element thin film 10 has a width W, for example, as shown in FIG. Is photoetched to 10 to 15 μm, and the specific resistance, the thickness t (see FIG. 2) and the width W of the ferromagnetic magnetoresistive element thin film 10 are adjusted so as to obtain a desired bridge resistance.
Determine the length from.

Finally, as shown in FIG. 1, the surface protective film 1
1 is formed to protect the ferromagnetic magnetoresistive element thin film 10 and the circuit element formed on the main surface of the P-type semiconductor substrate 1 from the outside air.

In the magnetic sensor manufactured as described above, the NPN transistor formed on the main surface of the P-type semiconductor substrate 1 and circuit elements such as a PNP transistor, a diffusion resistor and a capacitor (not shown) are electrically connected by the aluminum wiring metal 9. To function as an electric circuit.

Considering the actual resistance Ro of the ferromagnetic magnetoresistive element thin film 10, the resistance R _Ni-Co of the ferromagnetic magnetoresistive element thin film 10, the ferromagnetic magnetoresistive element thin film 10 and the aluminum wiring metal 9 are considered. Is represented by the sum of the junction resistance Rc of (Ro = R _Ni-Co + 2 · Rc). This means that in order to make the resistance Ro of the ferromagnetic magnetoresistive element thin film 10 as designed, not only the pattern processing accuracy of the ferromagnetic magnetoresistive element thin film 10 but also the ferromagnetic magnetoresistive element thin film 10 and the aluminum wiring metal 9 are required. The junction resistance of 1 must be made as small as possible so that the resistance value is determined only by the pattern of the ferromagnetic magnetoresistive element thin film 10.

The present inventor investigated by experiments what determines the junction resistance of Ni-Co / Al. Conventionally, contact resistance between the metal film (aluminum layer wiring) varies depending on the junction area, the junction resistance Rc is the junction resistivity [rho _c, and the area of the joint and A, Rc = ρ _c / A It is represented by. However, in the Ni—Co / Al system structure, the junction resistance does not depend on the area A of the junction, but only the contact area of the ferromagnetic magnetoresistive element thin film 10 and the slanted portion 9a of the aluminum wiring metal 9 has a junction resistance. Found to depend on. The junction resistance Rc in this structure is the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 1
The junction resistivity with 0 is ρ _c , the slanted portion 9 of the aluminum wiring metal 9
The inclination angle of a is θ (see FIG. 2), and the aluminum wiring metal 9 at the contact portion between the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10
Of the ferromagnetic magnetoresistive element thin film 10 and the thinner one (that is,
If the thickness of the ferromagnetic magnetoresistive element thin film 10) is t and the length of the contact portion is L, then Rc = ρ _c · sin θ / (t · L) (1) From this, the junction resistance Rc can be set to a value according to a desired design value. Further, it is possible to devise to reduce the junction resistance Rc from the equation (1). That is,
In order to increase L and decrease Rc in the equation (1), as shown in FIG.
As shown in FIG. 3, a concave portion 12 is formed at the tip of the aluminum wiring metal 9, and the ferromagnetic magnetoresistive element thin film 10 is formed on the concave portion 12.
To place. As a result, L becomes L1 + L2 + L3,
L can be made longer than when there is no recess 12.
That is, conventionally, the line width of the ferromagnetic magnetoresistive element thin film 10 (which is determined by the design value of the magnetoresistive change rate and the design value of the bridge resistance) remains, and the aluminum wiring metal 9 also remains in the strip shape. Since the aluminum wiring metal 9 is bonded to the aluminum wiring metal 9, the bonding resistance is increased. However, by adopting the shape of FIG. 3 (shape of the recess 12), the bonding resistance can be reduced by one digit or more.

Further, the length of one side of the recess 12 in FIG. 3 is more than twice the thickness of the aluminum wiring metal 9. More specifically, in this embodiment, the thickness of the aluminum wiring metal 9 is 1 μm.
In addition, the length of one side of the recess 12 is 16 μm, and the length of one side of the recess 12 is 16 times the thickness of the aluminum wiring metal 9.

With such a structure having the concave portion 12, in the conventional structure having no concave portion shown in FIG. 8, the direction at the junction between the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 is one direction (see FIG. 8 is in the A direction), but in the present embodiment of FIG. 3, the two are joined in three directions (A, B, C directions). In other words, the current inrush surface in three directions (A, B, C directions) is formed.

That is, the aluminum wiring metal 9 in the conventional one direction
In the method in which the ferromagnetic magnetoresistive element thin film 10 and the ferromagnetic magnetoresistive element thin film 10 are joined, as shown in FIG. The ferromagnetic magnetoresistive element thin film 10 is constricted at the end of the contact portion with. As a result, the allowable current capacity is reduced, and the ferromagnetic magnetoresistive element thin film 10 may be broken at the constricted portion. However, as in this embodiment, the recess 1
With the structure having 2, the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 are joined in three directions, so that the incident angle of the ferromagnetic magnetoresistive element thin film 10 varies during vapor deposition. Even though the ferromagnetic magnetoresistive element thin film 10 shown in FIG. 9 has a constricted direction, at least one direction in which the ferromagnetic magnetoresistive element thin film 10 does not have a constricted direction exists as shown in FIG.

Here, as shown in FIG. 11, two recesses 1 are formed.
The destruction rate of the ferromagnetic magnetoresistive element thin film 10 was measured for the case where 2a and 12b were formed and the case where there was no recess as shown in FIG. In FIGS. 11 and 12, the ferromagnetic magnetoresistive element thin film 10 and the aluminum wiring metal 9 are joined to each other at the wide portion 13 on the tip side of the ferromagnetic magnetoresistive element thin film 10.
And the contact portion length L is lengthened.

The results are shown in FIG. FIG. 13 shows the ratio of the ferromagnetic magnetoresistive element thin film 10 at the end of the aluminum wiring metal 9 to the current value, which is burned out and destroyed. It is standardized. From this FIG. 13, it was found that the breakdown current value of the ferromagnetic magnetoresistive element thin film 10 at the end of the aluminum wiring metal 9 can be tripled or more. That is, the value of 0.26 when there is no recess is two recesses 12.
When a and 12b are formed, it becomes 0.95, and 0.9
The breakdown current value could be increased to 5 / 0.26≈3.6 times. As described above, the allowable current capacity is increased by joining the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 in three directions to allow a current to flow in a direction without constriction and by increasing the contact portion length L. Increased.

In addition, in order to join the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 in at least three directions, as shown in FIG. 14, in addition, as shown in FIG. Around the ferromagnetic magnetoresistive element thin film 1
You may make it cover with 0. That is, the aluminum wiring metal 9 is formed in the wide portion 14 on the tip side of the ferromagnetic magnetoresistive element thin film 10.
It is also possible to join the side surfaces of the aluminum wiring metal 9 so that the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 are joined in three directions, and to lengthen the contact portion length L. In this structure, the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 are arranged so as to be joined in three directions. Further, as shown in FIG. 15, the circumference of the circular aluminum wiring metal 9 may be covered with the ferromagnetic magnetoresistive element thin film 10. In this structure, the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 can be joined from almost all directions.

On the other hand, when the ferromagnetic magnetoresistive element thin film 10 and the aluminum wiring metal 9 are joined, a slanted portion 9a is formed at the tip of the aluminum wiring metal 9 and heat treated (in forming gas) to form a circuit element. Although an ohmic contact is obtained, the surface of the aluminum wiring metal 9 is oxidized by this step, and when the ohmic contact is formed between the ferromagnetic magnetoresistive element thin film 10 and the aluminum wiring metal 9, a barrier layer is formed.
When the equation is not satisfied, the junction resistivity ρ _c is 10 ⁻⁴
It becomes as large as Ωcm ² to 10 ^-5 Ωcm ² . However, as described above, the junction resistivity ρ _c can be reduced to 10 ⁻⁶ Ωcm ² or less by etching away the oxide layer on the surface of the aluminum wiring metal 9. As a result, the junction resistance can be reduced.

FIG. 16 shows the measurement results of the junction resistance value when the oxide layer on the surface of the aluminum wiring metal 9 was removed by etching and when the oxide layer was not removed by etching. As shown in the figure, by removing the oxide layer by etching, both the variation in the junction resistance and the resistance value are reduced to about 1/3 or less, and the contact resistivity (ρ _c ) is 10 ⁻⁶ Ωcm.
² or less.

As described above, in this embodiment, the aluminum wiring metal 9 whose end portion is formed in a slanted cross section is arranged on the P-type semiconductor substrate 1, and the nickel-based ferromagnetic magnetoresistive element is placed on the slanted cross section 9a. In the magnetoresistive element in which the element thin film 10 is extended, the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 are provided.
, Ρ _c , the inclination angle of the oblique section 9a of the aluminum wiring metal 9 is θ, and the aluminum wiring metal 9 at the contact portion between the aluminum wiring metal 9 and the nickel-based ferromagnetic magnetoresistive element thin film 10
If the thickness of the thinner one of the nickel-based ferromagnetic magnetoresistive element thin film 10 (nickel-based ferromagnetic magnetoresistive element thin film 10) is t and the length of the contact portion is L, the aluminum wiring metal 9 and the nickel-based strong alloy thin film 10 are strong. Junction resistance R with the magnetic magnetoresistive element thin film 10
c was determined by Rc = ρ _c · sin θ / (t · L). Therefore, the junction resistance Rc between the aluminum wiring metal 9 and the nickel-based ferromagnetic magnetoresistive element thin film 10 can be accurately determined.

Further, when the nickel-based ferromagnetic magnetoresistive element thin film 10 is arranged on the aluminum wiring metal 9, the film is formed by the vacuum evaporation method, and the recess 12 in FIG. 3 is formed.
By disposing the aluminum wiring metal 9 and the nickel-based ferromagnetic magnetoresistive element thin film 10 in a state of being joined to each other in the direction or more, even if the incident angle of the nickel-based ferromagnetic magnetoresistive element thin film 10 varies during vapor deposition. Thus, there is at least one direction in which the necking of the nickel-based ferromagnetic magnetoresistive element thin film 10 does not occur. In other words, if the length of the linear opposing line between the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 is increased in order to prevent the constriction of the ferromagnetic magnetoresistive element thin film 10, the joint area becomes wider and the Ni- Co
When trying to control the incident angle during vapor deposition, it was necessary to set the holder at the optimum position in the vacuum vapor deposition device.
In the present embodiment, such a thing is avoided, and more easily,
In addition, the aluminum wiring metal 9 and the ferromagnetic magnetoresistive element thin film 10 can be reliably joined.

Further, when the Ni-Co type ferromagnetic magnetoresistive element thin film 10 is used as the magnetic sensor, the value of Rc is decreased by increasing the value of L, and the offset voltage generated due to the variation of the resistance value between the bridges. Is 1 /
It can be greatly reduced to 3 to 1/2. Furthermore, when using this magnetic sensor for vehicle use, when the battery voltage is directly applied to the ferromagnetic magnetoresistive element thin film 10,
If the Ni-Co / Al junction resistance is large, this portion may be burnt out, but in the present embodiment, such a defect can be avoided by making the junction resistance as designed.

When the ferromagnetic magnetoresistive element thin film 10 is directly deposited by the electron beam evaporation method after the Al sintering step (heat treatment step), an oxide layer on the surface of the aluminum wiring metal 9 formed in the aluminum sintering step. However, as in the present embodiment, the oxide layer on the surface of the aluminum wiring metal 9 is first removed by etching in the same vacuum container by plasma etching with an inert gas (for example, Ar gas). After that, the ferromagnetic magnetoresistive element thin film 10
Since the electron beam evaporation is performed without breaking the vacuum, a metal junction is formed without an oxide layer at the interface between the ferromagnetic magnetoresistive element thin film 10 and the aluminum wiring metal 9.

The present invention is not limited to the above-mentioned embodiment. For example, in the above-mentioned embodiment, the aluminum wiring metal 9 is used.
Since the ferromagnetic magnetoresistive element thin film 10 is thinner than the ferromagnetic magnetoresistive element thin film 10, "t" in the above formula (1) is defined as the thickness of the ferromagnetic magnetoresistive element thin film 10. When 9 is thinner, the thickness of the aluminum wiring metal 9 may be set to “t” in the above formula (1).

In the above embodiment, the case where the bipolar IC is formed on the semiconductor substrate 1 is shown. However, even if the circuit is formed by the MOS structure, the insulating layer is formed on the glass substrate or silicon without being integrated. On the substrate on which Ni-Co / Al was formed
It may be applied when a joint is provided.

Further, in the above embodiment, the Ni--Co thin film was used as the ferromagnetic magnetoresistive element thin film, but in addition, N
A ferromagnetic magnetoresistive element thin film such as i-Fe or Ni-Fe-Co may be used.

In the above embodiment, the aluminum wiring after the heat treatment step (sinter step) has been described. However, an oxide layer is easily formed on the aluminum surface even if left in the air or washed with water. The ferromagnetic magnetoresistive element thin film 10 may be formed after removing the oxide layer.

Further, as shown in FIG. 17, in a magnetic sensor having a ferromagnetic magnetoresistive element thin film 10 (Ni-Co thin film), the ferromagnetic magnetoresistive element thin film 10 is made of a ferromagnetic material to protect it from surge voltage. Magnetoresistive element thin film 1
The protective resistor 15 made of the same material as 0 may be used. That is, on the P-type semiconductor substrate 1, the aluminum wiring metal 9 whose end portion is formed in a slanted cross section is arranged, and the ferromagnetic magnetoresistive element thin film 10 is formed from the slanted cross section 9a.
In the magnetic sensor in which the protective resistor 15 made of the same material as the above is provided, the junction resistance Rc is Rc = ρ _c · sin θ /
It may be determined by (t · L).

[0036]

As described in detail above, according to the present invention,
The excellent effect that the joint resistance value between the wiring metal and the resistive element thin film can be accurately determined is exhibited.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a magnetic sensor of an example.

FIG. 2 is an enlarged view of part D in FIG.

FIG. 3 is a plan view showing a bonded state of a ferromagnetic magnetoresistive element thin film and an aluminum wiring metal.

FIG. 4 is a cross-sectional view showing the manufacturing process of the magnetic sensor.

FIG. 5 is a cross-sectional view showing the manufacturing process of the magnetic sensor.

FIG. 6 is a cross-sectional view showing the manufacturing process of the magnetic sensor.

FIG. 7 is a cross-sectional view showing the manufacturing process of the magnetic sensor.

FIG. 8 is a plan view showing a bonded state of a ferromagnetic magnetoresistive element thin film and an aluminum wiring metal for comparison.

FIG. 9 is a cross-sectional view showing a joint between a ferromagnetic magnetoresistive element thin film and an aluminum wiring metal.

FIG. 10 is a cross-sectional view showing a joint between a ferromagnetic magnetoresistive element thin film and an aluminum wiring metal.

FIG. 11 is a plan view of a magnetic sensor.

FIG. 12 is a plan view of a magnetic sensor for comparison.

FIG. 13 is a diagram showing a relationship between a current value and a film breakage rate.

FIG. 14 is a plan view of a magnetic sensor of an application example.

FIG. 15 is a plan view of a magnetic sensor of an application example.

FIG. 16 is a diagram showing measurement results of junction resistance.

FIG. 17 is a cross-sectional view of another magnetic sensor of another example.

[Explanation of symbols]

 1 P-type semiconductor substrate 9 Aluminum wiring metal 9a Diagonal portion 10 Ferromagnetic magnetoresistive element thin film

Claims (2)

[Claims] 1. A resistance element in which an aluminum-based wiring metal whose end portion is formed in a slanted section is arranged on a substrate, and a nickel-based resistance element thin film is extended from the slanted section in a cross section. The junction resistivity between the wiring metal and the nickel-based resistance element thin film is ρ _c , the inclination angle of the oblique section of the aluminum-based wiring metal is θ, and the aluminum at the contact portion between the aluminum-based wiring metal and the nickel-based resistance element thin film is The thickness of the thinner of the system wiring metal and the nickel-based resistance element thin film is t, and the length of the contact portion is L.
Then, the resistance adjustment of the resistance element is characterized in that the junction resistance Rc between the aluminum-based wiring metal and the nickel-based resistance element thin film is determined by Rc = ρ _c · sin θ / (t · L). Method. 2. The nickel-based resistance element thin film is formed on the aluminum-based wiring metal by using a vacuum deposition method when the nickel-based resistance element thin film is arranged, and the aluminum-based wiring metal and the nickel-based resistance element thin film are joined in two or more directions. The resistance adjusting method of the resistance element according to claim 1, wherein the resistance adjusting method is arranged in a state.