JPH05210100A - Manufacture of ferroelectric liquid crystal element - Google Patents

Manufacture of ferroelectric liquid crystal element

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Publication number
JPH05210100A
JPH05210100A JP4060592A JP4060592A JPH05210100A JP H05210100 A JPH05210100 A JP H05210100A JP 4060592 A JP4060592 A JP 4060592A JP 4060592 A JP4060592 A JP 4060592A JP H05210100 A JPH05210100 A JP H05210100A
Authority
JP
Japan
Prior art keywords
liquid crystal
rubbing
ferroelectric liquid
substrates
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4060592A
Other languages
Japanese (ja)
Other versions
JP2769943B2 (en
Inventor
Yasuhito Kodera
泰人 小寺
Takatsugi Wada
隆亜 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP4040605A priority Critical patent/JP2769943B2/en
Priority to US07/956,400 priority patent/US5353141A/en
Publication of JPH05210100A publication Critical patent/JPH05210100A/en
Application granted granted Critical
Publication of JP2769943B2 publication Critical patent/JP2769943B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To provide the manufacture of the ferroelectric liquid crystal element which has excellent bistability. CONSTITUTION:In a process of rubbing a couple of upper and lower substrates 11a and 11b provided with stripped electrodes 12a and 12b for multiplexing driving, unevenness in orientation control force due to the difference between the ridge directions of the stripped electrodes 12a and 12b is compensated by unevenness in the extent of the rubbing to manufacture the ferroelectric liquid crystal element while a deviation in the threshold value of switching between two different optical stable states is eliminated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、強誘電性液晶を用いた
液晶素子の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal element using a ferroelectric liquid crystal.

【0002】[0002]

【従来の技術】液晶分子の屈折異方性を利用して偏光素
子との組み合わせにより透過光線を制御する型の表示素
子がクラーク(Clark)およびラガーウオル(La
gerwall)により提案されている(米国特許第4
367934号明細書、米国特許第4639089号公
報等)。
2. Description of the Related Art A display device of a type in which transmitted light rays are controlled by utilizing a refractive anisotropy of liquid crystal molecules in combination with a polarizing element is a Clark or Lagerwall (La).
Gerwall) (US Patent No. 4)
376934, U.S. Pat. No. 4,690,089, etc.).

【0003】この表示素子は、カイラルスメクチック液
晶をマルチプレクシング駆動するための走査電極と信号
電極とで構成したマトリクス電極を備え、走査電極に
は、順次走査信号が印加され、該走査信号と同期して信
号電極には情報信号が印加される。
This display element is provided with a matrix electrode composed of scanning electrodes and signal electrodes for multiplexing driving of chiral smectic liquid crystal, to which scanning signals are sequentially applied and synchronized with the scanning signals. An information signal is applied to the signal electrode.

【0004】この表示素子に用いられるカイラルスメク
チック液晶は、一般に特定の温度域において、カイラル
スメクチックC相(SmC* )またはH相(SmH*
を有し、この状態において、加えられる電界に応答して
第1の光学的安定状態と第2の光学的安定状態のいずれ
かをとり、かつ電界の印加のないときはその状態を維持
する性質、すなわち双安定性を有し、また、電界の変化
に対する応答も速やかであり、高速ならびに記憶型の表
示素子用としての広い利用が期待されている。
The chiral smectic liquid crystal used in this display device generally has a chiral smectic C phase (SmC * ) or H phase (SmH * ) in a specific temperature range.
And has a property of taking one of the first optical stable state and the second optical stable state in response to an applied electric field in this state and maintaining the state when no electric field is applied. That is, it has bistability and has a quick response to changes in the electric field, and is expected to be widely used for high-speed and memory type display elements.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、現状
は、必ずしも良好な双安定性の素子が得られているとは
言えない。この原因の一つとして、液晶を配向させる為
の配向処理における問題が挙げられる。
However, at present, it cannot be said that a good bistable device has been obtained. One of the causes of this is a problem in the alignment treatment for aligning the liquid crystal.

【0006】マルチプレクシング駆動するためのストラ
イプ状の電極(ストライプ電極)を設けた、ストライプ
状の段差を有する一対の上下基板に対して、ラビング処
理をおこなう場合、ストライプ電極の稜線方向が上下基
板で異なる為、従来のように、同様のラビング処理をお
こなっても、上下基板に付与される配向規制力が異なっ
てくる。
When a rubbing process is performed on a pair of upper and lower substrates having stripe-shaped steps (striped electrodes) provided for multiplexing driving, the ridge line direction of the stripe electrodes is the upper and lower substrates. Because of the difference, even if the same rubbing treatment is performed as in the conventional case, the alignment regulating force applied to the upper and lower substrates is different.

【0007】これにより上下基板界面での液晶分子との
成すプレチルト角が異なり、第1の光学的安定状態と第
2の光学的安定状態が等価な関係でなくなってくる。
As a result, the pretilt angles formed by the liquid crystal molecules at the interfaces of the upper and lower substrates are different, and the first optically stable state and the second optically stable state are no longer in an equivalent relationship.

【0008】このため、一方の光学的安定状態から、他
方の光学的安定状態へのスイッチングにおける、しきい
値(電圧又はパルスの長さ)が互いに異なり、このこと
が双安定性をくずすことになると考えられる。
For this reason, the threshold values (voltage or pulse length) in switching from one optically stable state to the other optically stable state are different from each other, which causes the bistability to be destroyed. It is considered to be.

【0009】本発明の目的は、上記従来技術の問題点に
鑑みなされたもので、上記しきい値に差のない、良好な
双安定性の強誘電性液晶素子の製造方法を提供すること
にある。
An object of the present invention was made in view of the above problems of the prior art, and it is an object of the present invention to provide a method of manufacturing a ferroelectric liquid crystal device having good bistability and having no difference in the threshold value. is there.

【0010】[0010]

【課題を解決するための手段及び作用】本発明者らの研
究によれば、ラビング方向に対し、ストライプ電極の稜
線方向が、平行から垂直方向になるにしたがい、ストラ
イプ電極による段差のために、ラビング布との摩擦抵抗
が大きくなり、基板に付与する配向規制力が、逆に弱ま
っていくことが解った。また、同一のラビング布で複数
回のラビング処理を施すと、順次配向規制力が弱まって
いくことが解った。これはラビング布の劣化等の影響で
あると考えられている。
According to the research conducted by the present inventors, as the ridgeline direction of the stripe electrode is changed from parallel to the direction perpendicular to the rubbing direction, a step due to the stripe electrode causes It was found that the frictional resistance with the rubbing cloth increased and the alignment regulating force applied to the substrate weakened. It was also found that when the same rubbing cloth was rubbed multiple times, the alignment regulating force gradually weakened. This is considered to be due to the deterioration of the rubbing cloth.

【0011】本発明は、上述の内容を踏まえ、一対の上
下基板に対して、ラビング処理を行う場合、ラビング処
理の順序を定めるか、あるいは、各々のラビング処理の
強さを変えることにより、各基板に付与される配向規制
力を等しくし、これにより前述のしきい値のずれを防ぐ
ことができる。
In view of the above contents, according to the present invention, when rubbing treatment is performed on a pair of upper and lower substrates, the order of the rubbing treatment is determined or the strength of each rubbing treatment is changed. The orientation regulation forces applied to the substrates are made equal, and thus the above-mentioned shift of the threshold value can be prevented.

【0012】即ち本発明は、第1にマルチプレクシング
駆動するためのストライプ状の電極を設けた一対の基板
と、該基板間に強誘電性液晶を配置してなる、強誘電性
液晶素子の製造方法において、上記一対の基板のラビン
グ処理時に、ラビング方向に対し、ストライプ電極の稜
線方向が垂直もしくは、垂直により近い方の基板を、先
にラビング処理を行い、次にストライプ電極の稜線方向
が平行もしくは、平行により近い方の基板をラビング処
理することを特徴とする強誘電性液晶素子の製造方法で
あり、好ましくは、前記一対の基板のラビング処理を、
繰り返し行うことを特徴とする上記の強誘電性液晶素子
の製造方法であり、第2に、マルチプレクシング駆動す
るためのストライプ状の電極を設けた一対の基板と、該
基板間に強誘電性液晶を配置してなる、強誘電性液晶素
子の製造方法において、上記一対の基板のラビング処理
時に、各基板を異なる強さでラビングすることを特徴と
する強誘電性液晶素子の製造方法である。
That is, the present invention firstly manufactures a ferroelectric liquid crystal device comprising a pair of substrates provided with stripe-shaped electrodes for multiplexing driving, and a ferroelectric liquid crystal disposed between the substrates. In the method, during the rubbing treatment of the pair of substrates, the ridge line direction of the stripe electrode is perpendicular to the rubbing direction or the substrate closer to the vertical direction is first rubbed, and then the ridge line direction of the stripe electrode is parallel. Alternatively, it is a method of manufacturing a ferroelectric liquid crystal device, characterized in that the substrate closer to parallel is subjected to a rubbing treatment, preferably, the rubbing treatment of the pair of substrates,
A method for manufacturing a ferroelectric liquid crystal device as described above, which is characterized by being repeatedly performed. Second, a pair of substrates provided with stripe-shaped electrodes for multiplexing driving, and a ferroelectric liquid crystal between the substrates. In the method for manufacturing a ferroelectric liquid crystal element, the substrates are rubbed with different strengths during the rubbing treatment of the pair of substrates.

【0013】次に図面を用いて本発明を詳細に説明す
る。
Next, the present invention will be described in detail with reference to the drawings.

【0014】図1は、本発明に係る液晶素子の一例を模
式的に示す斜視図であり、図2は図1のA−A’線に沿
って取った断面図である。図2に示すように、この液晶
素子は、一対の平行に配置した上基板11a及び下基板
11bと、それぞれの基板に配線した例えば厚さが約4
00〜2,000Åのストライプ状の透明電極12aと
12bを備えている。11aと11bとの間には、強誘
電性液晶、好ましくは少なくとも2つの光学的安定状態
をもつ非らせん構造の強誘電性スメクチック液晶15が
配置されている。
FIG. 1 is a perspective view schematically showing an example of a liquid crystal element according to the present invention, and FIG. 2 is a sectional view taken along the line AA 'in FIG. As shown in FIG. 2, this liquid crystal element includes a pair of upper substrate 11a and lower substrate 11b arranged in parallel, and a thickness of, for example, about 4 which is wired on each substrate.
It has stripe-shaped transparent electrodes 12a and 12b of 00 to 2,000Å. A ferroelectric liquid crystal, preferably a non-helical ferroelectric smectic liquid crystal 15 having at least two optically stable states is arranged between 11a and 11b.

【0015】また、14aと14bは、配向制御膜であ
り、配向制御膜14a,14bと透明電極12a,12
bとの間に例えば厚さが200Å〜3,000Åの絶縁
膜13a,13b(SiO2 ,TiO2 ,Ta2 5
など)を配置してもよい。上下基板11a,11bの間
隔は強誘電性スメクチック液晶15内に散布された平均
粒径約1.5μm(一般に0.1〜3.5μm)のシリ
カビーズ16により保持される。
Further, 14a and 14b are alignment control films, and the alignment control films 14a and 14b and the transparent electrodes 12a and 12 are provided.
insulation 200Å~3,000Å is, for example, a thickness between the b layer 13a, 13b (SiO 2, TiO 2, Ta etc. 2 O 5 film) may be arranged. The space between the upper and lower substrates 11a and 11b is held by silica beads 16 having an average particle diameter of about 1.5 μm (generally 0.1 to 3.5 μm) dispersed in the ferroelectric smectic liquid crystal 15.

【0016】配向制御膜14a,14bには、スメクチ
ック液晶を配向させるためのラビング処理が施される
が、本発明第1では、一対の上下基板のラビング処理工
程において、図3(a)に示すように、ラビング方向に
対し、ストライプ電極の稜線方向が、垂直もしくは垂直
により近い方の基板を先にラビング処理を行い、次に、
図3(b)に示すようにストライプ電極の稜線方向が、
平行もしくは平行により近い方の基板をラビング処理す
る。より好ましくは、上記の順序で複数回、繰り返しラ
ビング処理する。
The orientation control films 14a and 14b are subjected to a rubbing treatment for orienting the smectic liquid crystal. In the first aspect of the present invention, the rubbing treatment step for a pair of upper and lower substrates is shown in FIG. As described above, the rubbing process is performed first on the substrate whose ridgeline direction of the stripe electrode is vertical or closer to the vertical with respect to the rubbing direction.
As shown in FIG. 3B, the ridgeline direction of the stripe electrode is
Rubbing is performed on the substrates that are parallel or closer to parallel. More preferably, the rubbing treatment is repeated a plurality of times in the above order.

【0017】上記のラビング処理方法では、ラビング方
向とストライプ電極による段差の方向の関係から生じる
配向規制力の強弱と、ラビング布の劣化による配向規制
力の強弱を互いに補償するものである。
In the above rubbing treatment method, the strength of the alignment control force caused by the relationship between the rubbing direction and the direction of the step due to the stripe electrode and the strength of the alignment control force due to the deterioration of the rubbing cloth are mutually compensated.

【0018】また本発明第2では、一対の上下基板のラ
ビング処理工程において、ストライプ電極による段差の
大きさや、ラビング方向とストライプ電極による段差の
方向の関係から生じる配向規制力の強弱を、各基板を異
なる強さでラビングすることにより補償するものであ
る。
Further, in the second aspect of the present invention, in the rubbing process of a pair of upper and lower substrates, the strength of the alignment regulating force caused by the size of the step due to the stripe electrodes and the relationship between the rubbing direction and the direction of the step due to the stripe electrodes is controlled for each substrate. Is compensated by rubbing with different intensities.

【0019】以下本発明を実施例及び比較例を用いて詳
細に説明する。
The present invention will be described in detail below with reference to examples and comparative examples.

【0020】[0020]

【実施例】本実施例を図2に基づいて説明すると、ま
ず、1.1+ mm厚のガラス基板11a,11b上にI
TOのストライプ状電極12a,12bを形成した。I
TOの厚さは、2,000Åであった。さらに上下電極
のショート防止絶縁体膜13a,13bとして、SiO
2 をスパッタ法により1,000Å形成した。その上に
ポリイミド形成液を塗布し、加熱焼成処理を施してポリ
イミド配向膜14a,14bを形成した。
EXAMPLE This example will be described with reference to FIG. 2. First, I was formed on the glass substrates 11a and 11b having a thickness of 1.1 + mm.
The TO stripe electrodes 12a and 12b were formed. I
The thickness of TO was 2,000Å. Further, as the short-circuit prevention insulator films 13a and 13b of the upper and lower electrodes, SiO
2 was formed by the sputtering method at 1,000 Å. A polyimide forming liquid was applied thereon, and heated and baked to form polyimide alignment films 14a and 14b.

【0021】次に、上記により作成した1組の上下基板
にナイロンのパイル糸を有するラビング布で、まず一方
の基板に対しては、ストライプ電極の稜線方向に垂直な
方向にラビング処理を施し、次に他方の基板に対しては
ストライプ電極の稜線方向に平行な方向にラビング処理
を施した。同様の方法で計10組の上下基板のラビング
処理を行った。次に、貼り合わせる基板の一方に1.5
μmのシリカビーズを散布し、もう一方の基板にエポキ
シ樹脂の接着シール剤を印刷し、それぞれラビング方向
が平行となる様(ストライプ電極が上下基板で直交する
様)に貼り合わせ、10組のパネルを作成した(ラビン
グ処理の順番でNo.1〜10のパネルとした)。これ
らのパネルにフェニルピリミジンを主成分とする混合強
誘電性液晶を注入した。
Next, a pair of upper and lower substrates prepared as described above is rubbed with nylon pile threads. First, one substrate is rubbed in a direction perpendicular to the ridgeline direction of the stripe electrode. Next, the other substrate was rubbed in a direction parallel to the ridgeline direction of the stripe electrode. A total of 10 sets of upper and lower substrates were rubbed by the same method. Next, 1.5 on one of the substrates to be bonded.
Disperse silica beads of μm, print an epoxy resin adhesive sealant on the other substrate, and bond them so that the rubbing directions are parallel (the stripe electrodes are orthogonal to each other on the upper and lower substrates), and 10 sets of panels (Panels No. 1 to 10 were formed in the order of rubbing treatment). A mixed ferroelectric liquid crystal containing phenylpyrimidine as a main component was injected into these panels.

【0022】次に各パネルをクロスニコル下で20Vの
矩形波をパルス巾を変えながら印加し、白→黒のしきい
値(パルス巾)を測定し、次に逆極性の矩形波をパルス
巾を変えながら印加し、黒→白のしきい値を測定した。
その結果を表1に示す。
Next, a rectangular wave of 20 V is applied to each panel under crossed Nicols while changing the pulse width, and the threshold value (pulse width) of white → black is measured. Was applied while changing the voltage, and the threshold value of black → white was measured.
The results are shown in Table 1.

【0023】[0023]

【表1】 以上の様にすべてのパネルにおいて白→黒、黒→白のし
きい値に差が見られなかった。
[Table 1] As described above, no difference was observed in the threshold values of white → black and black → white in all the panels.

【0024】[0024]

【比較例】本実施例と同様の方法で10組の基板を用意
し、ラビング処理を行い、同様な方法でセル化し、液晶
を注入した。但しラビング工程では、一対の上下基板の
うち、まず一方の基板に対してはストライプ電極の稜線
方向に平行な方向にラビング処理を施し、次に他方の基
板に対してはストライプ電極の稜線方向に垂直な方向に
ラビング処理を施した。
[Comparative Example] Ten sets of substrates were prepared by the same method as in this example, subjected to rubbing treatment, made into cells by the same method, and liquid crystal was injected. However, in the rubbing process, of the pair of upper and lower substrates, first, one substrate is subjected to rubbing treatment in a direction parallel to the ridgeline direction of the stripe electrode, and then the other substrate is rubbed in the ridgeline direction of the stripe electrode. Rubbing treatment was applied in the vertical direction.

【0025】この順序で10組の上下基板のラビング処
理を行いNo.1’〜10’のパネルとした。次に本実
施例と同様な方法で白→黒、黒→白のしきい値(パルス
巾)を測定した。その結果を表2に示す。
In this order, 10 sets of upper and lower substrates were rubbed and No. The panel was 1'to 10 '. Next, the threshold values (pulse width) of white → black and black → white were measured by the same method as in this example. The results are shown in Table 2.

【0026】[0026]

【表2】 以上の様に、いずれのパネルにおいても、白→黒、黒→
白のしきい値に大きな差を生じた。
[Table 2] As described above, in any panel, white → black, black →
There was a large difference in the white threshold.

【0027】上記実施例、比較例により、ストライプ状
の段差を有する一対の上下電極に対して、ラビング処理
の順序を替えることにより、しきい値のずれが大きく変
化することがわかる。本発明の第1のラビング処理方法
を用いた本実施例では、上記しきい値のずれが解消され
ている。
From the above-mentioned Examples and Comparative Examples, it is understood that the threshold deviation largely changes by changing the order of the rubbing process for a pair of upper and lower electrodes having stripe-shaped steps. In the present embodiment using the first rubbing processing method of the present invention, the deviation of the threshold value is eliminated.

【0028】また、本発明第2のラビング処理方法を用
いた場合にも、上記しきい値のずれが、本実施例と同程
度とすることができた。
Also, when the second rubbing method of the present invention was used, the deviation of the threshold value could be made approximately the same as in this embodiment.

【0029】[0029]

【発明の効果】以上説明したように、強誘電性液晶素子
の製造方法において、ラビング処理工程時に、第1には
ストライプ電極を施設してある一対の上下基板に対し
て、ラビング処理の順序を定めるか、あるいは、第2に
はラビング処理の強さを変えることにより、各基板に付
与される配向規制力を等しくすることができる。
As described above, in the method of manufacturing a ferroelectric liquid crystal device, during the rubbing process step, first, the rubbing process is performed on a pair of upper and lower substrates having stripe electrodes. It is possible to equalize the alignment regulating force applied to each substrate by setting the value or, secondly, changing the strength of the rubbing process.

【0030】即ち、第1の方法においてはラビング方向
とストライプ電極による段差の方向の関係から生じる配
向規制力の強弱と、ラビング布の劣化による配向規制力
の強弱を補償することができ、第2の方法においては、
ストライプ電極による段差の大きさや、ラビング方向と
ストライプ電極による段差の方向の関係から生じる配向
規制力の強弱を、各基板を異なる強さでラビングするこ
とにより補償することができた。
That is, in the first method, it is possible to compensate the strength of the alignment control force caused by the relationship between the rubbing direction and the direction of the step due to the stripe electrode and the strength of the alignment control force due to the deterioration of the rubbing cloth. In the method of
It was possible to compensate the strength of the alignment control force generated by the size of the step due to the stripe electrode and the relationship between the rubbing direction and the direction of the step due to the stripe electrode by rubbing each substrate with different strengths.

【0031】この様にして、上下基板の配向規制力を等
しくすることにより、2つの異なる光学的安定状態間の
スイッチングにおける、しきい値のずれがなくなり、良
好な双安定性の強誘電性液晶素子となる。
In this way, by making the alignment regulating forces of the upper and lower substrates equal, there is no shift in the threshold value during switching between two different optically stable states, and a ferroelectric liquid crystal of good bistability. It becomes an element.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る液晶素子の一例を模式的に示す斜
視図である。
FIG. 1 is a perspective view schematically showing an example of a liquid crystal element according to the present invention.

【図2】図1のA−A’線に沿って取った断面図であ
る。
FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG.

【図3】本発明におけるラビング方向と、ストライプ電
極基板の関係を示す模式図である。
FIG. 3 is a schematic diagram showing a relationship between a rubbing direction and a stripe electrode substrate in the present invention.

【符号の説明】[Explanation of symbols]

11a,11b 上下基板 12a,12b ストライプ状電極 13a,13b 絶縁膜 14a,14b 配向制御膜 15 強誘電性スメクチック液晶 16 シリカビーズ 11a, 11b Upper and lower substrates 12a, 12b Striped electrodes 13a, 13b Insulating films 14a, 14b Alignment control film 15 Ferroelectric smectic liquid crystal 16 Silica beads

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 マルチプレクシング駆動するためのスト
ライプ状の電極を設けた一対の基板と、該基板間に強誘
電性液晶を配置してなる、強誘電性液晶素子の製造方法
において、上記一対の基板のラビング処理時に、ラビン
グ方向に対し、ストライプ状電極の稜線方向が垂直もし
くは、垂直により近い方の基板を、先にラビング処理を
行い、次にストライプ状電極の稜線方向が平行もしく
は、平行により近い方の基板をラビング処理することを
特徴とする強誘電性液晶素子の製造方法。
1. A method of manufacturing a ferroelectric liquid crystal device, comprising: a pair of substrates provided with stripe electrodes for multiplexing driving; and a ferroelectric liquid crystal disposed between the substrates. When rubbing the substrate, the ridgeline direction of the striped electrode is perpendicular to the rubbing direction, or the substrate closer to the vertical is rubbed first, and then the ridgeline direction of the striped electrode is parallel or parallel. A method of manufacturing a ferroelectric liquid crystal device, characterized by subjecting a substrate closer to the substrate to a rubbing treatment.
【請求項2】 前記一対の基板のラビング処理を繰り返
し行うことを特徴とする請求項1に記載の強誘電性液晶
素子の製造方法。
2. The method of manufacturing a ferroelectric liquid crystal device according to claim 1, wherein the rubbing treatment of the pair of substrates is repeated.
【請求項3】 マルチプレクシング駆動するためのスト
ライプ状の電極を設けた一対の基板と、該基板間に強誘
電性液晶を配置してなる、強誘電性液晶素子の製造方法
において、上記一対の基板のラビング処理時に、各基板
を異なる強さでラビングすることを特徴とする強誘電性
液晶素子の製造方法。
3. A method of manufacturing a ferroelectric liquid crystal device, comprising: a pair of substrates provided with stripe-shaped electrodes for multiplexing driving; and a ferroelectric liquid crystal disposed between the substrates. A method of manufacturing a ferroelectric liquid crystal device, wherein each substrate is rubbed with different strength during a rubbing treatment of the substrate.
JP4040605A 1991-10-08 1992-01-31 Manufacturing method of ferroelectric liquid crystal device Expired - Fee Related JP2769943B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4040605A JP2769943B2 (en) 1992-01-31 1992-01-31 Manufacturing method of ferroelectric liquid crystal device
US07/956,400 US5353141A (en) 1991-10-08 1992-10-05 Method for aligning treatment of liquid crystal device including varying with time the feeding speed of the rubbing roller

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4040605A JP2769943B2 (en) 1992-01-31 1992-01-31 Manufacturing method of ferroelectric liquid crystal device

Publications (2)

Publication Number Publication Date
JPH05210100A true JPH05210100A (en) 1993-08-20
JP2769943B2 JP2769943B2 (en) 1998-06-25

Family

ID=12585151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4040605A Expired - Fee Related JP2769943B2 (en) 1991-10-08 1992-01-31 Manufacturing method of ferroelectric liquid crystal device

Country Status (1)

Country Link
JP (1) JP2769943B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008510195A (en) * 2004-08-17 2008-04-03 ネモプティック Liquid crystal display device with improved switching means at the periphery of the display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257128A (en) * 1986-04-30 1987-11-09 Sharp Corp Ferroelectric liquid crystal display device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257128A (en) * 1986-04-30 1987-11-09 Sharp Corp Ferroelectric liquid crystal display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008510195A (en) * 2004-08-17 2008-04-03 ネモプティック Liquid crystal display device with improved switching means at the periphery of the display device

Also Published As

Publication number Publication date
JP2769943B2 (en) 1998-06-25

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