JPH05197381A - Musical sound generator - Google Patents

Abstract

PURPOSE: To provide a musical sound generating device for generating a code suitable for a musical instrument. CONSTITUTION: First and second supporting members 214, 216 are separately and oppositely arranged, 1st and 3rd conductors 220, 240 and 2nd and 4th conductors 230, 50 can be mutually moved so as to keep electrically conductive relation in response to the impression of voltage, a pressure-sensitive semiconductor layer 260 is arranged between the 1st and 3rd conductors 220, 240 or between the 2nd and 4th conductors 230, 250 to form contact resistance between them, and the contact resistance is changed in response to a change in pressure. A 1st application circuit 264 is connected to the 3rd conductor 240 and a 2nd application circuit 266 is connected to the 2nd and 4th conductors.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure sensitive conversion device. In particular, it relates to a device provided with a thin layer of semiconductor material consisting of fine particles having a large number of surface contact protrusions located between at least two electrical contacts.

[0002]

BACKGROUND OF THE INVENTION It is known to generate musical tones by electrical devices. However,
Most electrical devices have the problem that the volume can only continuously change one of the tones. This limits the player's freedom of musical expression. SUMMARY OF THE INVENTION The present invention provides a new and simple device for utilizing pressure sensitive conversion with a contact resistance that varies inversely with the pressure applied to the analog converter. When used in electronic musical instruments, a plurality of such variable resistors or switches are placed in parallel to form a keyboard. Some switches are used to change the tone by changing the characteristics of one or more of the musical instrument generating circuits of the musical instrument.

Pressure sensitive analog switches are known. For example, Ruben US Pat. No. 2,375,375.
No. 178 and US Pat. No. 3,386,067 to Costanzo disclose an analog switch in which a fibrous or spongy layer containing a conductive material is sandwiched between two conductive plates. As the two conductor plates are compressed together, the number of electrically conductive paths through the sandwiched layers is increased, which reduces the electrical resistance of that layer. However, in these devices, the intermediate layer is required to have elasticity so as to separate the conductive plates and disconnect most of the conductive paths when the compressive force is released. Furthermore, the semiconductor layer depends on the macroscopic state of compaction in order to increase the number of conductive paths between the upper and lower conductor plates. Therefore, the sandwiched layers must be relatively thick. Eventually, in such devices, the elasticity of the fibrous or spongy layer may diminish with use, thus degrading the operating characteristics of the switch.

In Mitchell, US Pat. No. 3,806,471, a pressure sensitive semiconductor material such as molybdenum sulfide is disclosed which is inserted between conductor plates to form a variable resistor or transducer. Has been done. However, Mitchell makes use of volume resistance, that is, the relatively thick volume resistance of the molybdenum sulfide layer. On the other hand, the present invention utilizes the contact resistance or surface resistance of a very thin layer of molybdenum sulfide (more specifically, molybdenum disulfide). In particular, Mitchell forms many finite current circuits that spread three-dimensionally through the resistance layer.
Disclosed is 0.00254 to 2.54 cm thick molybdenum sulfide with particles of molybdenum sulfide ranging from 0 to 600 mesh. When compressed, the current circuit between the particles in the volume increases and the resistance value decreases. The semiconductor layer is permanently placed between the two electrodes.

In addition to the above-mentioned functional difference, in the Mitchell structure, the semiconductor layer is not exposed between the two conductor plates or between the conductor plate and the non-conductor plate, and the semiconductor surface is not exposed to the insulating plate or the conductor plate. Have to be arranged. Such a shape is fundamentally different from Applicant's invention where the pressure sensitive layer is not in intimate contact with either the conductor or the other pressure sensitive layer as necessary, but some contact must be at least .. Such an arrangement facilitates the use of the physical contact resistance of the surface of the composition rather than the use of the surface resistance of the individual material particles that Mitchell initially utilized.

The semiconductor layer of the present invention also uses particles of the order of 1 micron and preferably has a layer thickness of 0.002.
It is exemplified that the height is 54 cm or less. In addition, the surface of the semiconductor layer may initially be spatially separated from or in contact with the conductor electrode, as different resistance values occur depending on the magnitude of the surrounding surface contact, but intimate contact with the opposing surface. You must not do it. When the conductor electrode is pressed down on the surface of the thin semiconductor layer, numerous contact points are formed along the surface. This contact point increases as pressure is applied, reducing the resistance between the conductor plates or the contacts of the semiconductor layers. The surface contact semiconductor layer comprises a semiconductor layer material consisting of suitable particulates which are held on the surface by a binder.

An important advantage of the thin semiconductor layer of the present invention is that the semiconductor material used to form the semiconductor layer and the binder and binder thinner are mixed and sprayed onto the desired layer to form a submicron thick layer. It may be silk screened. Therefore, the labor and materials required for production are significantly reduced.

In addition to the above advantages, the use of molybdenum sulfide (specifically molybdenum disulfide) to effectively coat the conductor layer can prevent the conductor layer from contacting air. This can reduce the problems that occur when using a conductor plate that gradually corrodes when exposed to air. For example, copper conductor plates corrode when exposed to the atmosphere. To prevent this, expensive silver, or similar expensive alternative materials, must be used. However, when molybdenum sulfide is sprayed to cover the conductor plate, the degree of corrosion is greatly reduced, and an inexpensive conductor material such as copper can be used.

It should be noted that although the conductor plate and the surface of the semiconductor layer or the surfaces of the two semiconductor layers are not in intimate contact with each other, they are in contact with each other rather than being separated from each other. The other important advantage of is that the chattering inherent in most switches can be significantly, if not completely reduced. However, even if there is chattering, it only occurs when the resistance across the contacts of the switch device is very high, so the change in voltage due to the change in resistance that causes chattering is very small. Therefore, the switch structure according to the embodiment of the present invention does not cause bounce. Such bounce-free switches have valuable commercial applications in the ever-demanding computer industry over the improved bounce-free switches disclosed herein. Moreover, not only does the switch not bounce, but it is less expensive than conventional non-bounced switches.

Pearlman US Pat. No. 4,004,64
No. 2 discloses the use of touch resistance devices in musical instruments. However, the device sandwiches the semiconductor material between the two in a manner similar to Reuben and Costanzo. In particular, Perlman uses elastic materials such as foam rubber containing special materials such as dispersed graphite or foam-like synthetic polymeric materials. The structure of the switch has a foam semiconductor layer sandwiched between two conductor plates and an insulating layer having an orifice. When the compressive force is added in this way, the elastic foamy layer filled with graphite becomes
It transforms into an orifice in an insulating material so that electrical contact is made to operate the instrument. After that, the applied compressive force reduces the resistance between the two conductor plates by the method described above, and Perlman, which changes the volume and sound quality, uses a porous foam-like substance, so the atmosphere is easily discharged. Since it returns through the porous resistive material, there is no problem with atmospheric compression in the cavity when the switch is pressurized. Furthermore, Perlman utilizes the physical elasticity of the graphite-impregnated foamy material, so that its semiconductor layer is essentially thicker than that of the present invention. Furthermore, the reduction of the mechanical elasticity of the semiconductor layer also causes a deterioration of the switch characteristics.

Therefore, it is desirable to use an analog converter which has a variable pressure-sensitive resistor in the on-state, but does not use the elasticity of the semiconductor layer to turn off the switch when the pressure is removed. Further, it is always desirable to have an analog converter that does not use volume resistance through a relatively thick semiconductor layer in contact between two conductor plates or two electrodes.

[0012]

Embodiments of the present invention relate to a chord keyboard suitable for musical instruments. In such a chord keyboard, a large number of chord switches are used like a keyboard so that when one chord switch is pressed, one or more musical sounds can be produced. Each cord switch is assembled by providing several individually electrically independent touch switches. The touch switches are then placed in close proximity to close several touch switches when a certain contact force is applied. One feature of the present invention is that at least some of the cord switches make a common switch contact (several electrically isolated switches form each cord switch). This common switch contact provides an output bus where two or more different signals are mixed when the individual switches are closed. This dual function combines the semiconductor layer between two contacts (one of which is common with the other switch) and a contact electrically separated from its corresponding contact of the other switch. It becomes possible by doing.

Another important advantage of the present invention is that the cord can be created by applying a unique contact force. Then, the chord is changed by changing the position to which the contact force is applied by simply rotating the finger and adjusting one or more notes. This causes one or more electrically independent switches of the cord switch to open and close. To accomplish this function, each code switch is provided with individual segments that form separate contacts for the individual switches. These segments are relatively close together so that by applying a single contact force all switches are closed by electrically contacting the upper single conductor layer with the individual conductor segments. However, they are arranged in a non-contact relationship. Different signals are associated with each segment. These signals couple through the resistive layer and mix on the second contact of the single conductor layer switch.

The chords can be easily changed by the performer simply by rotating the finger which applies pressure. By rotating this finger, the single conductor layer is brought into electrical contact with another segment, or the contact between one or more segments and the single conductor layer, which are conventionally in contact, is broken.

In another embodiment of the invention, a single contact force can be applied to simultaneously achieve various independent switching functions. The device is particularly applicable to battery-powered musical instruments. In said instrument, the keyboard consists of touch switches interconnected as a resistive network to replace the strings and keys used in conventional instruments. In the above musical instrument, since a two-tone chord is formed by applying a single pressure,
It is desired to be able to generate two musical tones. There is also a demand for a switch device capable of slightly changing the frequency of one tone and keeping the frequencies of the other tones constant. If a certain sound in the two-tone chord can be changed as described above, a new music effect can be created.

The present invention enables a structure having a double switch structure in which the double switches simultaneously operate in response to a single contact force. Further, the present invention provides a semiconductor layer that covers the contacts of at least one switch such that the contact resistance of the switch varies inversely with the applied pressure.
The vibrato or tremolo effect of a musical sound whose pressure is rapidly increased or decreased can be created without changing the frequency of other musical sounds.

[0017]

The first principle of implementing the present invention will be described below.
It will be described with reference to FIGS. As shown in FIG. 1, the Allog switch has first and second conductive plates 50, 52.
And they are separated from each other by spacers 54 to form a gap or chamber 60 therebetween. At least one of the conductor plates 50 and 52 is resilient so that it is pressed towards the other conductor plate to close the switch.

The first conductor plate 50 has a thin conductor layer 66 of silver or other conductive material on the surface facing the second conductor plate 52.
Elastic support plate 64 like a Mylar with
Can be formed by. The second conductor plate 52 comprises a rigid plastic substrate member 68 having a thin copper surface 70 disposed thereon. Of course, the base member 68 may be resilient and the thin surface 70 may be made of silver or other suitable conductive material. Wires 56 and 58 are connected to silver layer 66 and copper surface 70, respectively, to electrically connect the analog switch to a suitable utilization circuit.

Finally, a thin layer 62 containing semiconductor material is sprayed, coated or otherwise planarized on the copper surface 70. Alternatively, the semiconductor layer 62 may be provided on the conductor layer 66 or both the copper surface 70 and the conductor layer 66. The semiconductor material may be of any suitable composition capable of being sprayed, screened, or otherwise applied flat to form a smooth surface. For example, the semiconductor material may be molybdenum sulfide (specifically molybdenum disulfide) consisting of fine particles having particles 1 to 10 microns in size mixed with a binder such as a resin to make it liquid. Resin thinner may be added to provide the proper concentration for spraying. In that case, the amount of binder and molybdenum sulfide particles is selected so that the weight ratio of binder to molybdenum sulfide in the resulting dry semiconductor layer is about 1: 1 and the amount of binder solvent is at least the binder. The molybdenum sulfide particles and the solvent of the binder are selected so that the spray method, the screen method, or other methods can be used. Then, the prepared solution is coated on the copper layer 70 on the conductor layer 66 of the support plate 64 or the base member 68 by a spray method, a screen method or another method to form a wet semiconductor layer, and then the wet semiconductor layer is formed. The layers are dried to form the semiconductor layer. Of course, the semiconductor layer may have any thickness as long as it has an exposed smooth semiconductor layer surface. However, a thickness of less than about 0.00254 cm is preferred to protect the semiconductor material and minimize surface non-uniformities that occur when thick semiconductor layers are used.

By using a very thin semiconductor layer,
The semiconductor material can be elastically moved by pushing down the conductor plate 50. In addition, when pressure is applied, it is the surface contact resistance that decreases, not the volume resistance, which reduces the amount of semiconductor material used and makes the switch faster, easier and less costly than conventional devices. Need less The minimum resistance through the semiconductor layer can be selected by adjusting the ratio of semiconductor material to binder.

Of course, it will be appreciated that the semiconductor material may be polished, coated or placed on the selected surface by any method so as to obtain a uniform and smooth exposed surface. Due to the change in pressure applied to press the second conductor against the semiconductor surface, a large number of contact points on the semiconductor surface may change, resulting in a change in the resistance across the semiconductor member. Any semiconductor material may be used as long as it provides a contact point. The resistance value of the semiconductor layer can be changed by changing the ratio of the semiconductor material and the resin. Since the resistance change is based on the surface resistance and not the volume resistance, the weight ratio of binder to semiconductor material is preferably about 1: 1.

FIG. 2 illustrates a pressure sensitive variable contact resistance analog switch 10 having a substrate member 12 of rigid plastic, resilient mylar (polyethylene terephthalate), or any other suitable material. A conductor portion 13 composed of first and second contact conductors 14 and 15 which are spatially separated is arranged on one surface of the base member 12. An insulating spacer 18 is attached to the base member 12 around the conductor portion 13. The cover 19 is the conductor portion 1.
3 and an insulating spacer 18 for forming a space 24 therebetween.

The cover 19 is composed of a flexible support member 20 made of, for example, a thin Mylar sheet. Conductor part 1
The side surface of the support member 20 facing the No. 3 is a suitable resin, for example, Specialty Coatings and Chemicals Co., Ltd.
s & Chemicals, Inc. ), A pressure sensitive semiconductor layer 22 made of a mixture of acrylic resin such as R-20 and molybdenum sulfide is sprayed. In one example, the liquid composition sprayed is 5 to 10 cc of resin,
Manufactured by mixing 40 cc of resin thinner with 8.5 grams of molybdenum sulfide. Of course, numerous other resin and semiconductor material compositions may be used without departing from the spirit of the invention. Molybdenum sulfide is preferred because of its low noise lubricity, but especially spongy iron powder and iron oxide or tungsten carbide powder, tin oxide powder, boron powder or any other semiconductor material is used. May be.

The cover 19 is bonded to at least the upper portion of the insulating spacer 18 so that the pressure-sensitive resistance layer 22 is always spatially separated from the conductor portion 13 (that is, the switch is normally open). Attached or mechanically fixed.
The covering is adhered or fixed so that air leakage occurs. Otherwise, an air flow path must be provided, as will be mentioned later in other embodiments.

In FIG. 3, a pressure-sensitive resistance layer 42 is arranged on top of the conductor portion 13, and a conductor layer 36 made of, for example, an extremely thin layer of silver faces the resistance layer 42 on the conductor portion 13. It is arranged on the surface of the member.

When the cover 19 is pushed down so as to come into contact with the conductor portion 13, the pressure-sensitive resistance layer 22, 42 or 62.
The pressure-sensitive semiconductor layer has a conductor portion 13 and a cover 19 so that (corresponding to FIGS. 2, 3 and 1 respectively) are in series between the first contact conductor and the second contact conductor. Other configurations are possible as long as they are in between. When more or less pressure is applied to the resistive layer, the accompanying surface contact occurs and the resistance between adjacent conductors changes.

Referring again to FIGS. 2 and 3, the support member 2
When 0 is pressed, the air 24 stored in the enclosure 24 is compressed and, for example, between the cover 19 and the insulating spacer 18,
Alternatively, it is discharged through the junction between the insulating spacer 18 and the base member 12. When the pressure is removed from the shroud 19, the elastic force of the support member 20 is insufficient to overcome the partial vacuum conditions that occur in the enclosure 24 and the shroud 19 remains pressed. Therefore, the switch 10 is prevented from returning to the normally open state. To avoid this problem, when the cover is compressed, or when pressure is removed, an orifice 26 is provided through the base member 12 to allow air to flow into or out of the enclosure 24 when pushing or releasing the enclosure. To spill from. Of course, any other suitable pressure relief mechanism is possible, for example the re-office 26 may be provided on the cover 19 or on the insulating spacer 18. However, it is desirable to provide the base member 12 with an orifice 26 as shown.

Next, FIG. 4 schematically shows usable conductor patterns. In particular, the pressure-sensitive variable resistance analog switch is shown with the cover removed to show the connection relationship between the pattern of the contact conductors 14 and 16 and the utilization circuit 28. In particular, the first conductor 32 is connected between one input terminal of the utilization circuit 28 and a plurality of circular first conductors 16 having different diameters and open ends. The second conductor 34 is connected between the other terminal of the utilization circuit 28 and the plurality of second conductors 14 having different diameters and open ends. The circular portions of the first and second conductors 16 and 14 are arranged so as to be sandwiched by each other while being separated from each other in space, and are arranged on the base member 12 together with an insulating spacer such as an insulating ring 18 surrounding the conductor portion 13. It By pressing the cover 19 in this manner, the first conductor 16 and the second conductor 14 are pressed.
An electrical path is formed through the resistor 31 formed by the semiconductor layer between and.

The range of resistance values produced between conductors 32 and 34 by applying pressure can be increased by increasing the spacing between conductors 14 and 16.

FIG. 5 illustrates another example of the principles of the present invention which provides a bounce-free switch device having a surface contact resistance that varies inversely with the applied pressure. In particular, the bounce-free switch device 100 has a first support member 102 made of mylar, a hard plastic material, or any other non-conductive material.
The first conductor 104 is disposed on the support member 102 and
Of pressure sensitive resistive layer 106 is disposed on the conductor 104 in electrical contact therewith.

A support member 110 of Mylar, hard plastic or other suitable non-conductive material facing the first pressure sensitive layer 106, a conductor 112 disposed on one surface of the support member 110, The second pressure-sensitive layer 1 which is arranged so as to cover the conductor 112 and be in electrical connection therewith.
A structure including 14 is provided. Second support member 11
0, the structure composed of the second conductor 112 and the second pressure-sensitive layer 114 faces the first support member 102, the structure composed of the first conductor 104, and the first pressure-sensitive layer 106. Positioned. The exposed surface 108 of the first pressure-sensitive layer 106 is the second
In intimate contact relationship with the exposed surface 116 of the pressure sensitive layer 114, thereby forming a non-intimate contact joint 118.

As indicated previously, the first and second pressure sensitive layers can be formed in larger shapes, but are preferably formed from a special particulate semiconductor material consisting of particles of a few microns in size. It The finely divided semiconductor material is mixed with a binder material, if desired a binder thinner, and deposited on the conductors 104 and 112 by a spray method, a silk screen method or another method, respectively. The pressure-sensitive layers 106 and 114 thus formed have a large number of particles protruding from the average surface thereof and form minute projections of a semiconductor material composed of fine particles. Because of this minute protrusion, the first
And the second pressure sensitive layer are in intimate electrical contact. However, when pressure is applied so that the two surfaces meet and are compressed, the microscopic protrusions press against each other on the pressure sensitive layer, further increasing the number of electrical contacts and reducing the resistance of the junction 118. However, since there are already a small number of electrical contact points (unless each pressure sensitive layer is compressed against each other, there are very few contact points, which results in a very high resistance of the joint. 2.) Chattering that occurs when the mechanical contacts touch one another in conventional switches is largely eliminated. Moreover, chattering occurs only when the resistance of junction 118 is very high and the voltage drop across junction 118 is very high.

When pressure is applied during operation and the pressure-sensitive layers compress each other, the number of contact points between the minute projections of the semiconductor member increases, which reduces the resistance of the joint 118, thus reducing the resistance of the joint. Reduce the voltage drop. Therefore, the conductor 12 connecting the conductor 104 to the threshold circuit or utilization circuit 122
The output voltage on 8 increases as shown in FIG. By applying this output voltage to the threshold circuit 122, switching from the off state to the on state in which there is no bounce and chattering at the output section 130 of the threshold circuit 122 is achieved as shown in FIG. be able to.

Next, FIG. 8 shows another example showing the principle of the present invention in which only one conductor has a pressure sensitive layer. In this example, a conductor 132 having a pressure sensitive layer 134 arranged in intimate electrical contact is arranged on top of the insulating support member 130. Second conductor 138 is also second
Of the support member 140 of FIG. Second conductor 13
No. 8 is arranged so as not to be in intimate contact with the surface 136 of the pressure-sensitive layer 134, but in contact therewith. As described above, the conductors 138 are connected to the semiconductor layer 132 by the fine protrusions.
And is in a non-conductive relationship with each other, which causes a very high contact resistance between the conductor 138 and the pressure-sensitive layer surface 136.

According to this example, although it is possible to select various particle sizes and layer thicknesses, the amount of electrical chattering generated by opening and closing the contact of the switch and the particle size of molybdenum sulfide are determined. It was found that there was a clear inverse relationship between them. That is, the finer the particles of molybdenum sulfide, the smoother the switching from the open state to the closed state and vice versa. In particular, when the particle size is 1 micron or less, or preferably about 0.7 micron, the switch with almost no chattering can be switched.

FIGS. 9 and 10 show a dual pressure switching device according to the invention. The switch device has a support member 212 made of a flexible elastic material such as a thin sheet of Mylar. The support member 212 further includes a first portion or bottom 214 and a second portion or top 216. First support member
Portion 214 and second portion 216 of second portion 216
Is separated from the first portion 214 by a fold line 218 that is folded over and overlaid.

A plurality of conductors are arranged on the support member 212. The first conductor 220 electrically connected to the first terminal 222 is arranged on the surface of the support member 212 in a first pattern 224, which is shown as U-shaped in FIG. 9 but may be any pattern. It The second conductor 230, which is electrically connected to the second terminal 232, is a linear conductor pattern that is located between the legs of the U-shaped pattern 224 of the first conductor 220 in FIG. The pattern 234 is disposed on the support member 212. The first pattern 224 of the first conductor 220 and the second pattern 23 of the second conductor 230.
4 is arranged on the first portion 214 of the support member 212.

The third conductor 240 is electrically connected to the third terminal 2
42, and is disposed on the second portion 216 of the support member 212 with the conductor pattern 244 in a mirror image relationship with the first conductor pattern 224. The fourth conductor 250 is electrically connected to the fourth terminal 252. The fourth conductor 250 extends across the first portion 214 to support member 212.
Up to the second portion 216 of. 4th conductor 2
50 is a pattern 254 in a mirror image relationship with the second pattern 234 and is arranged on the second portion 216 of the support member 212.

The semiconductor layer 260 includes the first, second, third and fourth layers.
Are placed on at least one of the conductors. Of course, the semiconductor layer 260 may be arranged on a plurality of conductors as shown in FIG. In FIG. 9, the semiconductor layer is disposed on the first and third conductors 220 and 240. Therefore, direct electrical contact with the conductor on which the semiconductor layer 260 is arranged does not occur. Rather, electrical contact must occur through the semiconductor layer. Therefore, a contact resistance is effectively formed between the conductors 220 and 240 so that there is an electrical resistance in series with the switch formed by the conductors 220 and 240.

The structure of the double pressure-operated switch according to the present invention can be formed by folding back the support member 212 along the folding line 218. In that case first
The pattern of the conductor 220 and the third conductor 240 and the pattern of the second conductor 230 and the fourth conductor 250 are vertically aligned. Thus, the first and third conductors form one switch contact of the dual switch arrangement and the second and fourth conductors form the second switch contact.

Spacer 262 maintains the first conductor 220 and the third conductor 240, and the second conductor 230 and the fourth conductor 250 in a spatially separated relationship so that the first portion and the first conductor are separated from each other. It is arranged around the conductor between the two parts. The force applied in the vertical direction further causes the first and third conductors 220 to
And 240 and the third and fourth conductors 230 and 250 are in electrical connection at the same time, the first conductor 220 and the second conductor 230 and the second portion 21 on the first portion 214.
The third conductor 240 and the fourth conductor 250 on 6 must be laterally adjacent.

The switch device described above may be used in musical instruments. In particular, the first and second utilization circuits 264 and 266
May be used for musical instruments having. First utilization circuit 26
4 produces a first tone having a first frequency and a second utilization circuit 266 produces a second tone having a second frequency or, for example, for adjusting the volume of the first tone. It is provided. Utilization circuits 264 and 266 can change the tone, for example, by changing the value of a selected resistor in the circuit.
It may have any suitable circuit configuration such as that disclosed in No. 9,203 or No. 3,796,756. One important advantage of the present invention is that the semiconductor composition layer 260
Is that the resistance of a certain utilization circuit can be changed by the action of pressure.

The double switch device described above with the finger is used to
By applying force as shown in the figure, two musical tones or one musical tone parameter can be controlled simultaneously. This force closes the first switch composed of the first and third conductors 230 and 240 and the second switch composed of the second and fourth conductors 230 and 250. The semiconductor layer 260 disposed on the first conductor 220 and the third conductor 240 shown in FIGS. 9 and 10 prevents direct contact between the first and third conductors 220 and 240. As a result, when the first and third conductors 220 and 240 are closed, a current flows through the semiconductor layer 260. The amount of contact resistance can be changed by changing the amount of contact force of the semiconductor layer.
Thus, in a preferred embodiment of the present invention, a change in the finger pressure applied to the switch device causes the first utilization circuit 2 to
The frequency of the musical sound produced by 64 can be changed while the frequency from the other utilization circuit 266 not connected to the semiconductor layer is kept constant. The switch device can provide a sound effect for a musical instrument.

It goes without saying that various structural changes can be made. For example, the pattern formed by the conductors of the support member may have any structure as long as the conductors of the two switches are sufficiently close to each other and can be actuated simultaneously by the operator's fingers. Furthermore, the first and third terminals may be attached to the first support member, and the second and fourth terminals may be attached to the second support member.

In this embodiment only one support need be flexible and therefore the other supports may be rigid.

The dual structure switch has many other possible applications. For example, one switch may be connected between the circuit and the power supply to open and close the circuit, and the other switch may be used to change the volume, for example.

An important advantage of the semiconductor layer described above is that it makes the switch containing the semiconductor layer almost free of bounce. Thus, the semiconductor layer provides a contact resistance that does not cause signal spikes that occur when the switch contacts are first contacted.

FIG. 11 shows another embodiment of the present invention. It comprises a first support member 270 and a second support member 272. The first support member 270 is a flexible mylar, a stiff plastic material, or any other suitable non-conductive support member. Further, the second support member 272 faces the first support member 270 and is positioned with a certain interval. The first conductor 274 is disposed on the surface of the first support member 270. The conductor 274 includes a first contact member 276 having a plurality of interdigital electrode fingers 278. The second contact member 280 also has a plurality of interdigital electrode fingers 282. The first contact member 276 is electrically connected to the first terminal 284,
The second contact member 280 is electrically connected to the second terminal 286. The first utilization circuit 288 uses the first terminal 284 and the second terminal 2 as already described in the embodiment of FIG.
It is electrically connected between 86.

A second conductor 290 is similarly disposed on the surface of the first support member 270. The second conductor 290 has a U-shaped pattern arranged around the first conductor 274. As in the previous embodiments, the first conductor 274 and the second conductor 290 have a single longitudinally applied pressure that simultaneously actuates a switch having the first conductor 274 and the second conductor 290, respectively. Thus, it is arranged on the first support member in a sufficiently close lateral direction.

The embodiment of the invention shown in FIG. 11 also includes a first conductor 27 on one surface of a second support member 272.
4 and the third conductor 292 arranged to face the second conductor 290 and the second conductor 290 on the same surface of the second support member 272.
And a fourth conductor 294 arranged so as to oppose to. Therefore, the first conductor 274 and the third conductor 292 are
Form the contact of the first switch, and the second conductor 290 and the fourth conductor 294 form the contact of the second switch.

In this embodiment, the third conductor 292 is
Is a second conductor having a shape that fully covers the first conductor 274.
Is a conductive portion on the support member 272 of. Fourth conductor 294
Has a size and shape corresponding to the second conductor 290. First, second, third and fourth conductors 274, 290, 2
92 and 294 may be composed of any suitable material,
It may be, for example, a thin layer of sprayed silver, a thin layer of copper or other suitable conductive material.

In order to obtain a variable contact resistance, the semiconductor layer 29
6 may be arranged to cover the first conductor 274. The semiconductor layer 296 may be arranged so as to cover the third conductor 292. Alternatively, the semiconductor layer may be disposed on one or both of the second and fourth conductors 290, 294 so that the two switches have variable contact resistance.

In yet another embodiment, the semiconductor layer 296 may be omitted and the third conductor 292 may simply be formed of a semiconductor composition. In this case, it is not necessary to provide the third conductor 292 with a separate conductive layer such as the silver layer or the copper layer described above.
Of course, this is the interdigital electrode fingers 278 and 28.
Each of the 0's is close enough to allow lateral resistance of the semiconductor layers to be relatively low when maximum pressure is applied.

The second utilization circuit 298 includes a second conductor 290.
And a fourth conductor 294.

A plurality of similar double switches can be arranged in a keyboard structure, in which case the fourth contact of each switch is connected in common and the contacts connecting the plurality of double switches to the keyboard structure are interconnected. The number can be minimized.

According to the present invention, there is provided a multi-touch switch device which is particularly suitable for constructing a touch board of an electronic musical instrument. In a multi-touch switch device, one conductor of the switch device serves to mix two or more signals having different frequencies, which allows chords to be generated.

FIG. 12 shows a partial cross-sectional view of a multiple touch switch device 310 which produces chords when a single contact pressure is applied. Multiple touch switches have a plurality of individually electrically separated switches that are functionally divided into two or more sets. Each set is equipped with a chord switch. A plurality of cord switches are arranged side by side to form a keyboard. In particular, the multi-touch switch device 310 has a first support layer 320 made of a rigid plastic insulating material or an elastically deformable material such as Mylar. The conductive layer 322 having a plurality of multiple segments is disposed on the upper surface 332 of the first support layer 320.
Attached to. Each of the conductive layers 322 has individually electrically isolated switches 325, 327, 329, 33.
Conductors 324, 326, 32 corresponding to one contact of
1 shows a chord switch with 8,330. A chord is generated when a single contact force is applied. In an embodiment of the invention, several electrically isolated conductors 324, 3
26, 328, 330 are conductors 324, 326, 32 when the operator's finger pushes the multiple touch switch device 310.
The upper surface of 8,330 can be contacted, which allows the switch 32
5, 327, 329, 331 are arranged close enough to each other to close.

The conductors 324, 326, 328 and 330 may be a single layer of conductive material, but preferably each of these conductors is a conductor layer mounted on top of the first support layer 320 and its The conductor layer is formed from semiconductor layers deposited by spraying, coating break, electrostatic plating, vacuum deposition or otherwise to form a very thin line of semiconductor over the entire surface.

For example, the conductor 324 has a conductor layer 334 on which a semiconductor layer 326 is formed.

The conductors 324, 326, 328, 330 are laterally separated from each other to provide the necessary electrical insulation. Since no insulating spacers are used between the conductors forming the chord switch, a smooth transition of chords can be achieved simply by sliding the player's finger over the surface of the touch switch. On the other hand, an insulating spacer is required to surround the multi-segment conductor layer 322 or chord switch. For example, in the embodiment of FIG. 13, the upper surface 372
A set of a plurality of individually electrically isolated switches disposed above is surrounded by a spacer 338.

The multiple touch switch device 310 further comprises a second support layer 344 having a bottom surface 340 having a single conductor layer 342 common to all cord switches. The conductor layer 342 is formed on the bottom surface 340 of the second support layer 344 by plating, spraying, electrostatic plating, or another suitable method.

A second semiconductor layer 346 is preferably, but not necessarily, formed on the other surface of conductor layer 342. Second support layer 344, conductor layer 342 and semiconductor layer 34
6 has a structure in which the semiconductor layer 3 is formed on the lateral spacer 338.
46 is mounted such that it is positioned with respect to the semiconductor layer of the cord switch. Second support layer 344, conductor layer 34
2 and the semiconductor layer composition layer 346 are elastically deformable,
Therefore, if the multiple touch switch device 310 is pressed with a finger,
The semiconductor layer 346 has conductors 324, 326, 328, 330.
Make electrical contact with one or more of the semiconductor layers of the set.

Therefore, each of the switches 325, 327, 329, 331 corresponding to one cord switch operates as an independent switch, and all or some of these switches are closed at the same time.

As shown in FIG. 12, a voltage controlled oscillator (VCO) 350 for generating a single high frequency signal is connected to a known maximum octave generator 352. This generator consists, for example, of a frequency divider which generates a plurality of signals having different frequencies. The multiple touch switch device 31 described above
In order to generate a chord using 0, it is only necessary to select four notes and check the individual frequencies of these notes. The octave oscillator output line that outputs one of the frequencies that make up a chord is a conductor 324, 326, 32.
The other conductor is connected to the appropriate output of an octave generator 352 which outputs an output signal of another selected frequency. Therefore, when a contact force is applied to the multiple touch switch device 310, the semiconductor layer 346 is pushed down and the conductors 324, 326, 32 are pressed.
It comes into contact with one or more semiconductor layers of 8,330. Thus, one or more signals having different frequencies are combined into a single conductor layer 342, where they are mixed and input to the amplifier 354 and then converted into sound by the speaker 356.

In the illustrated example, the conductor layer 334 of the conductor 324.
Is an octave generator 3 that outputs the root frequency of the chord
52 is connected to the output terminal. In addition, the conductor 324 is formed wider than the other 326, 328, 330 to make it easier to play the root note of the chord.

If the player wants to play a chord having four notes of different frequencies, a contact force is applied to the position where the semiconductor layer 346 is brought into contact with each of the conductors 324, 326, 328 and 330. All you have to do is To remove a chord from a chord, the player may slightly move his finger to remove contact pressure and release one or more switches. That is, the contact between the semiconductor layer 346 and one or more semiconductor layers on the conductors 324, 326, 328, 330 is opened when the contact force is removed because the second support layer 344 has elasticity. To do.

The above description shows four conductors 324, 326, and
Although made with respect to 328 and 330, obviously any number of switches may be utilized for each cord switch. Further, in order to allow the performer to play various different chords individually or in combination, a number of chord switches can be arranged in a row in the form of a keyboard.
When a plurality of code switches are arranged in a row in a keyboard shape, the second supporting layer 344, the conductor layer 342 and the semiconductor layer 346 may be the same for all the code switches forming the keyboard.

The multiple touch switch device 310 may include a single open / close switch stacked in a keyboard switch array. For example, in FIG. 12, the first open / close switch conductor 360 is disposed on the upper surface of the second support layer 344, and the second open / close switch conductor 362 is provided on the third support so as to face the first open / close switch conductor 360. Layer 364
Is located on the bottom of the. First open / close switch conductor 3
60 and the second opening / closing switch conductor 362 are, for example, the second
Spacer 36 consisting of a strip having a rectangular cross-section secured between a support layer 344 and a third support layer 364.
They are separated from each other by 6 and are in a normally open switch form.

In one use example, the open / close switch is connected between the voltage source 361, the voltage controlled oscillator (VCO) and the octave generator. Therefore, no power is supplied to the VCO or octave generator while the keyboard is not operated.

FIG. 13 shows four conductors 370 each.
A top cross-sectional view of a plurality of cord switches 372 having a set 322 is shown. Each of the electrically isolated conductors 370, as previously described, represents an individual switch coupled to one output of the octave generator 352 shown in FIG. When the switch is closed by contacting the conductor 370 with the semiconductor layer 346 of FIG. 12, one signal from the octave generator is coupled through the semiconductor layer with another signal having a different frequency and the first conductor layer 3
Mix on 42.

FIG. 14 illustrates another embodiment in which the multi-segment conductor layer 322 of FIG. 12 comprises a single continuous conductor rather than four electrically isolated conductors. .. In this example, the keyboard is formed by connecting each conductor to the output from the octave generator 352 shown in FIG. In particular, FIG. 14 shows a number of electrically continuous conductors 380, 382, 384, each conductor being a spacer 3 to keep the individual switches in the normally open state.
It is surrounded by 90.

FIG. 15 shows a cross section of the multiple switch device shown in FIG. Conductors 380, 382
And 384 are disposed on the first support layer 379 and the spacer 390 is disposed between the conductors 380, 382 and 384.

The conductor 380 has a conductor layer 387 located on the upper surface of the first support layer 379 and a semiconductor layer 388 covering the upper surface of the conductor layer 387.

The second support layer 392 having a low surface, in which the conductor layer 393 and the semiconductor layer 394 are overlapped and fixed, is disposed above the spacer 390 so as to face the conductors 380, 382 and 384 in the same manner as described above. Is attached to.

The multiple switch device of FIG. 15 can be stacked with additional open / close switches. In this open / close switch, the conductor layer 397 is formed on the upper surface of the second support layer 392, and the third support layer 395 which faces the conductor layer 397 is further formed.
Can be formed by forming a conductor layer 396 on the lower surface of the. The support layers 395 are separated by spacers 390.

FIG. 16 shows the function solved by the present invention described above. The power supply 610 is connected to and powers the circuit 612, which converts the input signal into an output signal. The switch 614 is provided between the power source 610 and the circuit 612 and can be opened and closed to supply or cut off power to the circuit 612. Similarly, the other switch 616 is connected to the input line of the circuit 612 to supply or cut off the input signal. To achieve the objects of the invention, switches 614 and 616 are interconnected to open and close simultaneously in response to a single applied pressure. Switch 616
The contact of switch 616 comprises a pressure sensitive semiconductor material to provide a pressure sensitive variable resistor in series with.

FIG. 17 shows a dual-function touch switch device having a first supporting member 620 made of a flexible or rigid insulator. First support member 6
20 has an upper surface 622, on which the first conductor layer 62
4 are provided. The first conductor layer 624 is a layer of copper, silver or the like formed by the same method as described above.

The second supporting member 626 is also made of an insulating material, and is arranged on the first supporting member 620 so as to be separated therefrom. The second conductor layer 630 is positioned or fixed to the bottom surface of the second support member 626, and is arranged so as to face the first conductor layer 624 with a space therebetween. Since the second support member 626 is made of an elastically deformable material, the second conductor layer 6 is
30 is a first conductor layer 624 due to a single longitudinal pressure F.
Is pushed down to come into contact with. Therefore, the first touch switch 632 is formed.

The second touch switch 642 is also operable in response to the same pressure F. Third conductor layer 634
Is provided on the upper surface of the second support member 626. Third
The supporting member of 1 is also made of an elastically deformable material, and is disposed on the third conductor layer 634 by the second spacer 640 so as to be spaced apart therefrom. The fourth conductor layer 638 is the third
Is fixed to the bottom surface of the third supporting member 636 while facing the conductor layer 634 of FIG. The third support member 636 and the fourth conductor layer 638 form the second spacer 64.
It is separated by 0 from the second support member 626 and the third conductor layer 634. The second spacer 640 is the third and fourth
Are arranged so as to surround each of the conductor layers 634 and 638.

In operation, when a vertical pressure F is applied to the upper surface of the third support member 636, the third support member 636 is pressed.
And the fourth conductor layer 638 is elastically deformed and the third conductor layer 63
4, the second switch 642 is brought into conductive contact with the power supply terminal 4 and the power source 643 and the power supply terminal of the utilization circuit 644 are connected.
When further pressure is applied, the second support member 626, the third support member 626,
Of the conductor layer 634 and the second conductor layer 630 are elastically deformed, the second conductor layer 630 is in conductive contact with the first conductor layer 624, the first switch 632 is closed, and the input signal is input to the utilization circuit 644. Supply.

In the basic embodiment of the present invention, the first, second, third and fourth conductor layers 624, 630, 634, 63 are used.
8 is an appropriate first, second and third support member 620, 6
26, 636, and a conductor layer or a conductor plate disposed on the conductor plate. The conductor layer is formed from materials and methods similar to those previously described.

In the embodiment, preferably, a semiconductor layer for providing a resistance in series with the switch is arranged on the upper surface of at least one of the first and second conductor layers 624 and 630. In particular, referring to FIG. 23, the first semiconductor layer 648 is disposed on the exposed surface of the first conductor layer 646 in the manner previously described. Similarly, the second conductor layer 630 is the second semiconductor layer 6
It has a second conductor layer 650 covered with 52. The semiconductor layer is arranged by a silk screen method, a spray method or another method.

In the preferred embodiment, the semiconductor layer is preferably made from a mixture of molybdenum sulfide and a binder made of a suitable resin. Of course, it is also possible to use a suitable elastic substance. The thickness of the semiconductor layer is preferably 0.00254 cm or less. As described above, when pressure is applied, a large number of contact points are formed between the semiconductor layers 652 and 648, so that the surface contact resistance is reduced. Therefore, a pressure sensitive variable resistor is formed in series with the switch.

Of course, the third and fourth conductor layers 634, 63
A semiconductor layer can be provided on the upper surface of 8 to form another variable resistor.

The switches 632 and 642 of the touch switch device having the dual function are closed at almost the same time, or in reality, the time when the fourth conductor layer 638 and the third conductor layer 634 are in contact with each other and the second conductor layer 630. There is a time lag between the contact time of the first conductor layer 624 and the contact time. Therefore, before the input signal is given to the utilization circuit 644, the utilization circuit 64
4 is supplied with electric power. Therefore, the various circuit elements are sufficiently warmed up and ready for operation before the input signal is applied.

[Brief description of drawings]

FIG. 1 is a plan cross-sectional view of a pressure sensitive analog switch having a pressure sensitive coating layer located between two spaced conductors.

FIG. 2 is a preferred plan sectional view of a pressure-sensitive analog switch.

FIG. 3 is a plan sectional view of a pressure-sensitive analog switch having a thin resistance coating on a conductor.

FIG. 4 is a schematic diagram of an uncovered pressure sensitive analog switch connected to a utilization circuit.

FIG. 5 is a side sectional view of a switch device without bounce.

FIG. 6 is a diagram of pressure and voltage showing a change in voltage between semiconductor layers when the pressure applied to two semiconductor layers increases.

FIG. 7 is a diagram showing an output of the switch shown in FIG. 5 in which bounce does not occur.

FIG. 8 is a side sectional view of a bounce-free switch having only one semiconductor layer.

FIG. 9 is an exploded partial schematic view of two unfolded side-by-side conversion switches.

10 is a cross-sectional view taken along line 10-10 of the switch device shown in FIG.

FIG. 11 is another exploded partial schematic view of two side-by-side switches.

FIG. 12 is a partial schematic view and a partial broken sectional perspective view showing the structure of one cord switch.

FIG. 13 is a simplified plan view of an uncovered chord keyboard showing individual segments of multiple chord switches.

FIG. 14 is a plan view showing an electrically connected conductor array utilized in a single keyboard configuration.

FIG. 15 is a cross-sectional view of electrically connected conductors of the only keyboard of FIG.

FIG. 16 is a schematic view showing the operation of the double stack switch.

FIG. 17 is a cross-sectional view of a dual function touch switch device.

[Explanation of symbols]

 212 Support Member 214 First Part of Support Member 216 Second Part of Support Member 220 First Conductor 230 Second Conductor 260 Semiconductor Layer 240 Third Conductor 250 Fourth Conductor 264 First Utilization Circuit 266 Circuit of 2

 ─────────────────────────────────────────────────── --Continued from the front page (31) Priority claim number 140921 (32) Priority date April 16, 1980 (33) Priority claim country United States (US) (31) Priority claim number 140937 (32) Priority date April 16, 1980 (33) Priority claiming countries United States (US)

Claims (2)

[Claims] 1. A switch device, a first utilization circuit, and a second utilization circuit, wherein the switching device comprises a first support member and a first conductor arranged on the first support member. A second conductor disposed on the first support member, a second conductor
Of the first support member, the third conductor arranged on the second support member, the fourth conductor arranged on the second support member, and the pressure-sensitive semiconductor layer. The second support members are spaced apart and are opposed to each other, the first and third conductors and the second and fourth conductors are closely arranged so as to operate simultaneously, and the first and third conductors and the first and third conductors are provided. The second and fourth conductors are movable so as to be electrically connected to each other in response to the application of pressure, and the pressure-sensitive semiconductor layer is composed of the first and third conductor pairs and the second and fourth conductors. A contact resistance is formed between at least one conductor pair of the pair so as to be disposed between the conductor pairs, the contact resistance changing in response to a change in pressure, and the first utilization circuit is Is connected to a conductor, and the second utilization circuit is the second
And a musical tone generating device connected to a fourth conductor. 2. A switch device having a double structure, a first use circuit and a second use circuit, wherein the double structure switch device is bendable having a first portion and a second portion. A support member, a first conductor disposed on the first portion of the support member, a second conductor disposed on the first portion of the support member, and a second conductor disposed on the second portion of the support member. 3 conductors, and a fourth conductor disposed on the second portion of the support member,
A pressure sensitive semiconductor layer disposed to cover at least one of the first, second, third and fourth conductors to form a contact resistance, the support member comprising first and third support members. Conductors spaced apart from the second and fourth conductors and bent to face and face each other, the first and third conductors and the second and fourth conductors forming first and second switches, respectively. , The first and third conductors and the second and fourth conductors are each movable in an electrically conductive relationship, and the first and second switches are simultaneously operable in response to pressure. The tone generating device is characterized in that the first utilization circuit is connected between first and third conductors, and the second utilization circuit is connected between second and fourth conductors.