JPH051961A - Atomospheric pressure sensor - Google Patents

Atomospheric pressure sensor

Info

Publication number
JPH051961A
JPH051961A JP3153098A JP15309891A JPH051961A JP H051961 A JPH051961 A JP H051961A JP 3153098 A JP3153098 A JP 3153098A JP 15309891 A JP15309891 A JP 15309891A JP H051961 A JPH051961 A JP H051961A
Authority
JP
Japan
Prior art keywords
pressure
sensitive element
substrate
amplifier
amplification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3153098A
Other languages
Japanese (ja)
Inventor
Makoto Miwa
誠 三輪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Industries Corp
Original Assignee
Toyoda Automatic Loom Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Automatic Loom Works Ltd filed Critical Toyoda Automatic Loom Works Ltd
Priority to JP3153098A priority Critical patent/JPH051961A/en
Publication of JPH051961A publication Critical patent/JPH051961A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901Structure
    • H01L2224/4903Connectors having different sizes, e.g. different diameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Landscapes

  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To provide a small atmospheric pressure-sensor easy to adjust and having excellent reliability and good temperature characteristic. CONSTITUTION:A pressure-sensitive element for detecting the atmospheric pressure, an amplifier IC 12 having a pressure-sensitive element installation area for installing the pressure-sensitive element 13 on the surface major section and arranged with input/output electrodes on the surface periphery section, and a hybrid IC board 11 having an amplifying element installation area for installing the amplifier IC 12 on part of the surface are provided. The back face of the amplifier IC 12 is fixed to the amplifying element installation area of the hybrid IC board 11, and the input/output electrodes of the amplifier IC 12 and the wiring pattern on the surface of the hybrid IC board 11 are connected with bonding wires 14. The back face of the pressure-sensitive element 13 is fixed to the pressure-sensitive element installation area of the amplifier IC 12, and the operating electrode on the surface of the pressure-sensitive element 13 and the input/output electrodes of the amplifier IC 12 are connected with the bonding wires 14.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、気圧センサに関するも
のであり、詳しくは、半導体で形成した抵抗体領域のピ
エゾ抵抗効果を利用して大気圧等を計測するよう構成し
た絶対圧型の気圧センサに係わるものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a barometric pressure sensor, and more particularly to an absolute pressure type barometric pressure sensor configured to measure atmospheric pressure and the like by utilizing the piezoresistive effect of a resistor region formed of a semiconductor. Related to.

【0002】[0002]

【従来の技術】一般に、半導体に抵抗体領域とこの抵抗
体領域を含む膜状のダイヤフラムとを形成した感圧素子
によって大気圧を計測する絶対圧型の気圧センサを得る
場合、その構成時の容易性や実際の使用時の利便性など
の理由から、感圧素子の出力を増幅する増幅素子や感度
調整用のトリミング抵抗等を感圧素子と共に一つの回路
基板に搭載することにより、全体をハイブリッドIC
(混成集積回路)の形態としてその集積化を図る手法が
採られている。
2. Description of the Related Art Generally, in the case of obtaining an absolute pressure type atmospheric pressure sensor for measuring atmospheric pressure by a pressure sensitive element having a semiconductor body having a resistive region and a film-like diaphragm including the resistive region, it is easy to configure the absolute pressure type atmospheric pressure sensor. Performance and convenience during actual use, an amplification element that amplifies the output of the pressure-sensitive element, a trimming resistor for sensitivity adjustment, etc. are mounted together with the pressure-sensitive element on a single circuit board, making the whole hybrid. IC
As a form of (hybrid integrated circuit), a method for achieving its integration is adopted.

【0003】図4(a)及び(b)は、ハイブリッドI
Cの形態を採る従来の気圧センサの内部構造をその上面
形態及び側面形態によって示す図である。同図に示すよ
うに、まず、回路基板を成す10×25mm程度の大き
さのハイブリッドIC基板1の表面には、気圧検出用の
2×3mm程度の大きさの感圧素子2と、増幅素子とし
ての5mm角程度の大きさのアンプIC3と、トリミン
グ抵抗としての複数の厚膜印刷抵抗4とが設置されてい
る。そして、ハイブリッドIC基板1の表面には、所定
の配線パターン(図示せず)が選択的に配置されてお
り、この配線パターンと、感圧素子2の表面に配置され
た作動電極(後述)との間と、アンプIC3の表面に配
置された入出力電極(図示せず)との間とは、複数のボ
ンディング・ワイヤ5でそれぞれ結線されており、ま
た、ハイブリッドIC基板1の縁部には、その領域にお
ける配線パターンとの電気的な接続を図りながら複数の
入出力ピン(ダミーを含む)6が配置されている。
FIGS. 4A and 4B show a hybrid I
It is a figure which shows the internal structure of the conventional atmospheric pressure sensor which takes the form of C by the top surface form and the side surface form. As shown in the figure, first, on the surface of a hybrid IC substrate 1 having a size of about 10 × 25 mm, which constitutes a circuit board, a pressure-sensitive element 2 having a size of about 2 × 3 mm for detecting atmospheric pressure and an amplifying element are provided. An amplifier IC 3 having a size of about 5 mm square and a plurality of thick film printed resistors 4 as trimming resistors are installed. A predetermined wiring pattern (not shown) is selectively arranged on the surface of the hybrid IC substrate 1, and this wiring pattern and an actuation electrode (described later) arranged on the surface of the pressure sensitive element 2 are provided. And the input / output electrodes (not shown) arranged on the surface of the amplifier IC 3 are connected by a plurality of bonding wires 5, respectively, and the edge of the hybrid IC substrate 1 is connected to each other. , A plurality of input / output pins (including dummy) 6 are arranged while making electrical connection with the wiring pattern in that region.

【0004】ここで、ハイブリッドIC基板1に対する
感圧素子2の具体的な設置の状態は以下のようになって
いる。図5は、図4に示したハイブリッドIC基板1に
対する感圧素子2の設置状態をその側面形態によって示
す図である。
Here, the specific installation state of the pressure sensitive element 2 on the hybrid IC substrate 1 is as follows. FIG. 5 is a view showing a state in which the pressure sensitive element 2 is installed on the hybrid IC substrate 1 shown in FIG.

【0005】同図に示すように、まず、ここで用いられ
る感圧素子2は、0.3〜0.5mm程度の厚みを有し
ており、その表面周縁部には前述の作動電極7が配置さ
れ、さらに、表面中央部には抵抗体領域(図示せず)を
含む5〜数十μm程度の厚みを有するダイヤフラム(図
示せず)が形成されたものとなっている。なお、このよ
うに形成された感圧素子2の裏面には、0.5〜数mm
程度の厚みを有する台座8が接合されており、この台座
8により、感圧素子2の全体を常に安定な状態に維持す
るために必要な強度が付与されると共に、膜状のダイヤ
フラムの下部に位置する気室(図示せず)の内部圧力が
一定の状態に保持されるようになっている。そして、台
座8が接合された感圧素子1は、その台座8の裏面に接
着剤9を介しつつハイブリッドIC基板1の表面におけ
る所定の領域に固定された状態となっており、以下、図
示のように、この状態にある感圧素子2の作動電極7と
ハイブリッドIC基板1の配線パターンとがボンディン
グ・ワイヤ5でそれぞれ結線されるようになっている。
As shown in the figure, the pressure sensitive element 2 used here has a thickness of about 0.3 to 0.5 mm, and the above-mentioned working electrode 7 is provided on the peripheral portion of the surface thereof. Further, a diaphragm (not shown) including a resistor region (not shown) having a thickness of about 5 to several tens of μm is formed in the central portion of the surface. In addition, on the back surface of the pressure-sensitive element 2 formed in this way, 0.5 to several mm
A pedestal 8 having a certain thickness is joined, and the pedestal 8 gives strength necessary for always maintaining the entire pressure-sensitive element 2 in a stable state, and at the bottom of the membrane diaphragm. The internal pressure of the located air chamber (not shown) is kept constant. The pressure-sensitive element 1 to which the pedestal 8 is joined is fixed to a predetermined area on the front surface of the hybrid IC substrate 1 with an adhesive 9 on the back surface of the pedestal 8, and will be described below. As described above, the working electrode 7 of the pressure sensitive element 2 and the wiring pattern of the hybrid IC substrate 1 in this state are connected by the bonding wires 5, respectively.

【0006】[0006]

【発明が解決しようとする課題】ところで、図4に示す
ように、上述した従来の気圧センサにおいては、ハイブ
リッドIC基板1の表面に対し、感圧素子2、アンプI
C3、厚膜印刷抵抗4等の必要な回路素子を並べて搭載
していることから、その横方向に対する大きさが当然に
大きなものとなってしまう。また、厚膜印刷抵抗4によ
る感圧素子2の感度やオフセット等の調整は、必然的
に、回路素子をハイブリッドIC基板1に全て搭載し、
さらに、それらのボンディング・ワイヤによる全ての結
線が完了した後に行う必要があるので非常に面倒なもの
となる。
By the way, as shown in FIG. 4, in the above-described conventional atmospheric pressure sensor, the pressure sensitive element 2 and the amplifier I are arranged on the surface of the hybrid IC substrate 1.
Since the necessary circuit elements such as C3 and the thick film printed resistor 4 are mounted side by side, the size in the lateral direction naturally becomes large. Further, adjustment of the sensitivity, offset, etc. of the pressure sensitive element 2 by the thick film printed resistor 4 inevitably mounts all circuit elements on the hybrid IC substrate 1,
Further, it is very troublesome since it needs to be performed after all the connections by the bonding wires are completed.

【0007】一方、図5に示すように、感圧素子2は、
その裏面に台座8を介しながらハイブリッドIC基板1
の表面に設置されているので、感圧素子2の表面とハイ
ブリッドIC基板1の表面との間には著しい高低差が生
じており、これにより、感圧素子2における作動電極7
とハイブリッドIC基板1における配線パターンとのボ
ンディング・ワイヤによる結線が困難となってその信頼
性が充分に確保されない場合がある。また、ハイブリッ
ドIC基板1の熱膨張率は、感圧素子2のそれとは著し
く異なるものであることから、この熱膨張率の差によ
り、ハイブリッドIC基板1が周囲の温度の変動に応じ
て膨張又は収縮したときの歪みが接着剤9及び台座8を
介して感圧素子2に伝えられてしまい、その伝えられた
歪みに感圧素子2のダイヤフラムが反応して適性な気圧
の検出が為されなくなる。
On the other hand, as shown in FIG.
The hybrid IC substrate 1 with the pedestal 8 on its back surface
Since it is installed on the surface of the pressure sensitive element 2, there is a significant difference in height between the surface of the pressure sensitive element 2 and the surface of the hybrid IC substrate 1.
In some cases, it may be difficult to connect the wiring pattern to the wiring pattern on the hybrid IC substrate 1 with a bonding wire, and the reliability may not be sufficiently secured. Further, the coefficient of thermal expansion of the hybrid IC substrate 1 is significantly different from that of the pressure sensitive element 2, so that the difference in the coefficient of thermal expansion causes the hybrid IC substrate 1 to expand or contract in accordance with fluctuations in ambient temperature. The strain when contracted is transmitted to the pressure sensitive element 2 via the adhesive 9 and the pedestal 8, and the diaphragm of the pressure sensitive element 2 reacts to the transmitted strain and an appropriate atmospheric pressure cannot be detected. .

【0008】本発明は、こうした様々な実情に鑑みて為
されたものであり、その第1の目的は、小型で調整が容
易な気圧センサを提供することにあり、その第2の目的
は、信頼性に優れ温度特性が良好な気圧センサを提供す
ることにある。
The present invention has been made in view of these various circumstances, and a first object thereof is to provide a barometric pressure sensor which is small in size and easy to adjust, and a second object thereof. An object is to provide a barometric pressure sensor having excellent reliability and excellent temperature characteristics.

【0009】[0009]

【課題を解決するための手段】本発明の手段は以下のそ
れぞれに示すとおりである。まず、請求項1記載の発明
は、気圧検出用の感圧素子と、感圧素子を設置するため
の感圧素子設置領域を表面主要部に有すると共に入出力
電極を表面周縁部に配置して成る増幅素子と、増幅素子
を設置するための増幅素子設置領域を表面の一部に有し
て成る回路基板とを具備しており、感圧素子をその裏面
を以て増幅素子における感圧素子設置領域に固定し、感
圧素子の表面に配置されている作動電極と増幅素子にお
ける入出力電極とをボンディング・ワイヤで結線すると
共に、増幅素子をその裏面を以て回路基板における増幅
素子設置領域に固定し、増幅素子における入出力電極と
回路基板の表面に配置されている配線パターンとをボン
ディング・ワイヤで結線して成ることを特徴とするもの
である。
Means for solving the problems Means of the present invention are as follows. First, the invention according to claim 1 has a pressure-sensitive element for pressure detection and a pressure-sensitive element installation region for installing the pressure-sensitive element in the main surface portion, and the input / output electrodes are arranged in the peripheral portion of the surface. And a circuit board having an amplification element installation area for installing the amplification element on a part of the front surface thereof. The pressure-sensitive element is installed on the back surface of the pressure-sensitive element in the amplification element installation area. And connecting the working electrode arranged on the surface of the pressure sensitive element and the input / output electrode of the amplifying element with a bonding wire, and fixing the amplifying element with its back surface to the amplifying element installation region on the circuit board, It is characterized in that the input / output electrodes of the amplification element and the wiring pattern arranged on the surface of the circuit board are connected by bonding wires.

【0010】また、請求項2の発明は、気圧検出用の感
圧素子と、感圧素子を設置するための感圧素子設置領域
を表面主要部に有すると共に入出力電極を表面主要部と
表面周縁部とに配置して成る増幅素子と、増幅素子を設
置するための増幅素子設置領域を表面の一部に有して成
る回路基板とを具備しており、感圧素子をその表面を下
にしつつ増幅素子における感圧素子設置領域に載置し、
感圧素子の表面に配置されている作動電極と増幅素子の
表面主要部における入出力電極とをバンプで接合すると
共に、増幅素子をその裏面を以て回路基板における増幅
素子設置領域に固定し、増幅素子の表面周縁部における
入出力電極と回路基板の表面に配置されている配線パタ
ーンとをボンディング・ワイヤで結線して成ることを特
徴とするものである。
According to a second aspect of the present invention, a pressure-sensitive element for detecting atmospheric pressure and a pressure-sensitive element installation region for installing the pressure-sensitive element are provided on the main surface portion, and the input / output electrodes are provided on the main surface portion and the surface. It has an amplifying element arranged on the periphery and a circuit board having an amplifying element installation region for installing the amplifying element on a part of the surface, and the pressure sensitive element is placed on the lower surface. Place it in the pressure sensitive element installation area of the amplification element while
The actuating electrodes arranged on the surface of the pressure sensitive element and the input / output electrodes on the main surface of the amplifying element are joined by bumps, and the amplifying element is fixed to the amplifying element installation area on the circuit board with the back surface of the amplifying element. And a wiring pattern arranged on the surface of the circuit board is connected by a bonding wire.

【0011】そして、請求項3記載の発明は、請求項1
又は2記載の増幅素子の表面周縁部にトリミング抵抗を
さらに設置して成ることを特徴とするものである。さら
に、請求項4記載の発明は、気圧検出用の感圧素子と、
感圧素子を設置するための感圧素子設置領域を表面主要
部に有すると共にランド電極を表面主要部と表面周縁部
との間に連続的に配置して成る所定の材質の中間基板
と、中間基板を設置するための中間基板設置領域を表面
の一部に有して成る回路基板とを具備しており、感圧素
子をその表面を下にしつつ中間基板における感圧素子設
置領域に載置し、感圧素子の表面に配置されている作動
電極と中間基板の表面主要部におけるランド電極とをバ
ンプで接合すると共に、中間基板をその裏面を以て回路
基板における中間基板設置領域に固定し、中間基板の表
面周縁部におけるランド電極と回路基板の表面に配置さ
れている配線パターンとをボンディング・ワイヤで結線
して成ることを特徴とするものである。
The invention according to claim 3 is the same as claim 1
Alternatively, a trimming resistor is further installed on the peripheral portion of the surface of the amplifying element described in 2. Furthermore, the invention according to claim 4 is a pressure-sensitive element for detecting atmospheric pressure,
An intermediate substrate of a predetermined material, which has a pressure sensitive element installation region for installing a pressure sensitive element on the main surface portion and continuously disposes land electrodes between the main surface portion and the peripheral edge portion of the surface, and an intermediate substrate. A circuit board having an intermediate board installation area for setting a board on a part of its surface, and mounting the pressure sensitive element on the pressure sensitive element installation area of the intermediate board with its surface facing down. Then, the working electrode arranged on the surface of the pressure-sensitive element and the land electrode on the main surface of the intermediate substrate are joined by bumps, and the intermediate substrate is fixed to the intermediate substrate installation area of the circuit substrate with the back surface of the intermediate substrate. It is characterized in that the land electrode on the peripheral portion of the surface of the substrate and the wiring pattern arranged on the surface of the circuit board are connected by bonding wires.

【0012】そしてさらに、請求項5記載の発明は、請
求項4記載の中間基板を成す材質の熱膨張率が感圧素子
を成す材質の熱膨張率と同等であることを特徴とするも
のである。
Further, the invention according to claim 5 is characterized in that the coefficient of thermal expansion of the material forming the intermediate substrate according to claim 4 is equal to the coefficient of thermal expansion of the material forming the pressure sensitive element. is there.

【0013】[0013]

【作用】本発明の作用は以下のそれぞれに示すとおりで
ある。まず、請求項1記載の発明においては、感圧素子
を設置するための感圧素子設置領域を表面主要部に有す
ると共に入出力電極を表面周縁部に配置して成る増幅素
子を用意し、感圧素子をその裏面を以て増幅素子におけ
る感圧素子設置領域に固定した後に感圧素子の表面に配
置されている作動電極と増幅素子における入出力電極と
をボンディング・ワイヤで結線し、かつ、増幅素子をそ
の裏面を以て回路基板における増幅素子設置領域に固定
した後に増幅素子における入出力電極と回路基板の表面
に配置されている配線パターンとをボンディング・ワイ
ヤで結線することにより、回路基板の表面の一部に感圧
素子を直接設置する必要がなくなって横方向に対する大
きさが縮小される。
The function of the present invention is as follows. First, in the invention according to claim 1, an amplifying element having a pressure sensitive element installation region for installing a pressure sensitive element in a main surface portion and input / output electrodes arranged in a peripheral edge portion of the surface is prepared. After fixing the pressure element to the pressure sensitive element installation region of the amplification element with its back surface, the working electrode and the input / output electrode of the amplification element are connected with a bonding wire, and the amplification element Is fixed to the amplification element installation area of the circuit board with its back surface, and then the input / output electrodes of the amplification element and the wiring pattern arranged on the front surface of the circuit board are connected by bonding wires, thereby making Since it is not necessary to directly install the pressure sensitive element on the section, the size in the lateral direction is reduced.

【0014】また、請求項2記載の発明においては、感
圧素子を設置するための感圧素子設置領域を表面主要部
に有すると共に入出力電極を表面主要部と表面周縁部と
に配置して成る増幅素子を用意し、感圧素子をその表面
を下にしつつ増幅素子における感圧素子設置領域に載置
した後に感圧素子の表面に配置されている作動電極と増
幅素子の表面主要部における入出力電極とをバンプで接
合し、かつ、増幅素子をその裏面を以て回路基板におけ
る増幅素子設置領域に固定した後に増幅素子の表面周縁
部における入出力電極と回路基板の表面に配置されてい
る配線パターンとをボンディング・ワイヤで結線するこ
とにより、回路基板の表面の一部に感圧素子を直接設置
する必要がなくなって横方向に対する大きさが縮小され
ると同時に縦方向に対する大きさも縮小される。
Further, in the invention of claim 2, the pressure sensitive element installation region for installing the pressure sensitive element is provided in the main surface portion, and the input / output electrodes are arranged in the main surface portion and the peripheral portion of the surface. In the main part of the surface of the amplifying element and the working electrode arranged on the surface of the pressure sensitive element Wiring arranged on the front surface of the circuit board after connecting the input / output electrodes with bumps and fixing the amplifier element to the amplifier element installation area on the circuit board with its back surface By connecting the pattern to the bonding wire with a bonding wire, it is not necessary to directly install the pressure sensitive element on a part of the surface of the circuit board, and the size in the horizontal direction is reduced, and at the same time, the vertical direction. Size against is also reduced.

【0015】そして、請求項3記載の発明においては、
請求項1又は2記載の増幅素子の表面周縁部にトリミン
グ抵抗をさらに設置することにより、回路基板の表面の
一部にトリミング抵抗を設置する必要がなくなって横方
向に対する大きさがさらに縮小されると共に、トリミン
グ抵抗による感圧素子の感度やオフセット等の調整が増
幅素子を回路基板の表面の一部に設置する以前において
可能となる。
According to the invention of claim 3,
By further installing the trimming resistor on the peripheral portion of the surface of the amplifying element according to claim 1 or 2, it is not necessary to install the trimming resistor on a part of the surface of the circuit board, and the size in the lateral direction is further reduced. At the same time, the sensitivity and offset of the pressure sensitive element can be adjusted by the trimming resistor before the amplification element is installed on a part of the surface of the circuit board.

【0016】さらに、請求項4記載の発明においては、
感圧素子を設置するための感圧素子設置領域を表面主要
部に有すると共にランド電極を表面主要部と表面周縁部
との間に連続的に配置して成る所定の材質の中間基板を
用意し、感圧素子をその表面を下にしつつ中間基板にお
ける感圧素子設置領域に載置した後に感圧素子の表面に
配置されている作動電極と中間基板の表面主要部におけ
るランド電極とをバンプで接合し、かつ、中間基板をそ
の裏面を以て回路基板における中間基板設置領域に固定
した後に中間基板の表面周縁部におけるランド電極と回
路基板の表面に配置されている配線パターンとをボンデ
ィング・ワイヤで結線することにより、感圧素子の表面
における作動電極と回路基板における配線パターンとを
ボンディング・ワイヤで直接結線する必要がなくなる。
Further, in the invention according to claim 4,
An intermediate substrate of a predetermined material is prepared, which has a pressure sensitive element installation area for installing a pressure sensitive element on the main surface portion and continuously disposes land electrodes between the main surface portion and the peripheral edge portion of the surface. , The bump is used to place the pressure sensitive element on the surface of the intermediate substrate after placing the pressure sensitive element on the pressure sensitive element installation region of the intermediate substrate and the land electrode on the main part of the surface of the intermediate substrate. After bonding and fixing the intermediate substrate with the back surface thereof to the intermediate substrate installation area of the circuit substrate, the land electrode on the peripheral portion of the surface of the intermediate substrate and the wiring pattern arranged on the surface of the circuit substrate are connected by a bonding wire. By doing so, it is not necessary to directly connect the working electrode on the surface of the pressure sensitive element and the wiring pattern on the circuit board with a bonding wire.

【0017】そしてさらに、請求項5記載の発明におい
ては、請求項4記載の中間基板を成す材質の熱膨張率が
感圧素子を成す材質の熱膨張率と同等であることから、
周囲温度が変動した場合でも感圧素子と中間基板とは同
等な割合で膨張又は縮小し、その周囲温度の変動時の回
路基板の膨張又は縮小によって生じる歪みが感圧素子に
与える影響が可及的に抑制される。
Further, in the invention according to claim 5, since the coefficient of thermal expansion of the material forming the intermediate substrate according to claim 4 is equal to the coefficient of thermal expansion of the material forming the pressure-sensitive element,
Even if the ambient temperature fluctuates, the pressure-sensitive element and the intermediate board expand or contract at the same rate, and the strain caused by the expansion or contraction of the circuit board when the ambient temperature fluctuates can affect the pressure-sensitive element. Will be suppressed.

【0018】[0018]

【実施例】以下、本発明の実施例について図面を参照し
ながら詳細に説明する。なお、本実施例においては、請
求項1又は3に対応する第1の実施例と、請求項2又は
3に対応する第2の実施例と、請求項4又は5に対応す
る第3の実施例とについて順に説明するものとする。
Embodiments of the present invention will now be described in detail with reference to the drawings. In addition, in this embodiment, the first embodiment corresponding to claim 1 or 3, the second embodiment corresponding to claim 2 or 3, and the third embodiment corresponding to claim 4 or 5. Examples and will be explained in order.

【0019】まず、図1(a)及び(b)は、本発明の
第1の実施例に係る気圧センサの内部構造をその上面形
態及び側面形態によって示す図である。同図に示すよう
に、回路基板としてのハイブリッドIC基板11の表面
の一部には、増幅素子としてのアンプIC12を設置す
るための所定の領域(増幅素子設置領域)が確保されて
おり、この所定の領域に対し、シリコン・ウェハから形
成された5mm角程度の大きさのベア・チップ状態のア
ンプIC12がその裏面に合成樹脂等の材質から成る接
着剤(図示せず)を介して固定されている。ただし、こ
こで用いられるアンプIC12は、その表面の主要部に
感圧素子13を設置するための所定の領域(感圧素子設
置領域)を有しており、かつ、その表面の周縁部に入出
力電極(図示せず)を配置して成るものである。また、
ハイブリッドIC基板11の表面には、所定の配線パタ
ーン(図示せず)が選択的に配置されており、この配線
パターンとアンプIC12の表面における入出力電極と
は、両者間の電気的な接続を図るために、金やアルミニ
ウム等の材質から成るボンディング・ワイヤ14でそれ
ぞれ結線されている。さらに、ハイブリッドIC基板1
1の縁部には、その領域における配線パターンとの電気
的な接続を図って複数の入出力ピン15が配置されてい
る。なお、ハイブリッドIC基板11は、アンプIC1
2を接着剤によって確実に設置できる絶縁性を有するも
のであれば、どのような材質のものでもよい。
First, FIGS. 1A and 1B are views showing the internal structure of a barometric pressure sensor according to a first embodiment of the present invention in terms of its top face shape and side face shape. As shown in the figure, a predetermined area (amplification element installation area) for installing the amplifier IC 12 as an amplification element is secured in a part of the surface of the hybrid IC board 11 as a circuit board. An amplifier IC 12 in a bare chip state of about 5 mm square formed from a silicon wafer is fixed to a predetermined area on its back surface via an adhesive (not shown) made of a material such as synthetic resin. ing. However, the amplifier IC 12 used here has a predetermined area (pressure-sensitive element installation area) for installing the pressure-sensitive element 13 in the main part of the surface thereof, and is located at the peripheral portion of the surface. An output electrode (not shown) is arranged. Also,
A predetermined wiring pattern (not shown) is selectively arranged on the surface of the hybrid IC substrate 11, and this wiring pattern and the input / output electrodes on the surface of the amplifier IC 12 are electrically connected to each other. For the purpose of illustration, they are connected by bonding wires 14 made of a material such as gold or aluminum. Furthermore, the hybrid IC substrate 1
A plurality of input / output pins 15 are arranged at the edge portion of 1 for electrical connection with the wiring pattern in the area. The hybrid IC board 11 is the amplifier IC1.
Any material may be used as long as it has an insulating property so that 2 can be surely installed with an adhesive.

【0020】そして、アンプIC12の表面の主要部に
おける感圧素子13を設置するための所定の領域には、
シリコン・ウェハから形成された気圧検出用の2×3m
m程度の大きさの感圧素子13がその裏面に絶縁性合成
樹脂等の材質から成る接着剤(図示せず)を介して固定
されている。ただし、この感圧素子13は、従来と全く
同様な構造を有しており、その表面の一部に配置された
作動電極(図示せず)とアンプIC12の表面における
入出力電極とは、両者間の電気的な接続を図るために、
金やアルミニウム等の材質から成るボンディング・ワイ
ヤ14でそれぞれ結線されている。
Then, in a predetermined area for installing the pressure sensitive element 13 in the main part of the surface of the amplifier IC 12,
2 x 3m for pressure detection made from silicon wafer
A pressure-sensitive element 13 having a size of about m is fixed to the back surface of the pressure-sensitive element 13 with an adhesive (not shown) made of a material such as insulating synthetic resin. However, this pressure-sensitive element 13 has a structure exactly the same as the conventional one, and an operating electrode (not shown) arranged on a part of its surface and an input / output electrode on the surface of the amplifier IC 12 are both In order to establish an electrical connection between
The wires are connected by bonding wires 14 made of a material such as gold or aluminum.

【0021】ここで、この気圧センサは、アンプIC1
2の表面の周縁部に薄膜又は厚膜から成るトリミング抵
抗(図示せず)をさらに設置して構成されており、この
トリミング抵抗による感圧素子13の感度やオフセット
等の調整を、アンプIC12をハイブリッドIC基板1
1の表面の一部に実際に設置する以前に行うことが可能
となっている。すなわち、この感度やオフセット等の調
整は、アンプIC12と感圧素子13との電気的な接続
が図られた状態であれば可能であることから、この気圧
センサを構成する際に、まず、未だウェハ状態にあるア
ンプIC12に対して感圧素子13を個々に設置した後
にアンプIC12と感圧素子13とをボンディング・ワ
イヤ14でそれぞれ結線し、この状態で、トリミング抵
抗による感圧素子13の調整を施した後にウェハ状態の
アンプIC12をダイシングによって分割し、最後に、
その感圧素子13の設置及び調整を経た状態の分割後の
アンプIC12をハイブリッドIC基板11の表面の一
部に設置すればよい。
Here, this atmospheric pressure sensor is an amplifier IC1.
A trimming resistor (not shown) made of a thin film or a thick film is further installed on the peripheral portion of the surface of 2. The amplifier IC 12 is used to adjust the sensitivity and offset of the pressure sensitive element 13 by the trimming resistor. Hybrid IC board 1
It is possible to do this before the actual installation on part of the surface of 1. That is, since the sensitivity, the offset, and the like can be adjusted when the amplifier IC 12 and the pressure-sensitive element 13 are electrically connected to each other, when the pressure sensor is constructed, the adjustment is not yet made. After the pressure sensitive element 13 is individually installed to the amplifier IC 12 in the wafer state, the amplifier IC 12 and the pressure sensitive element 13 are respectively connected by the bonding wires 14, and in this state, the pressure sensitive element 13 is adjusted by the trimming resistor. After performing the process, the wafer-state amplifier IC 12 is divided by dicing, and finally,
The divided amplifier IC 12 after the pressure sensitive element 13 has been installed and adjusted may be installed on a part of the surface of the hybrid IC substrate 11.

【0022】以上、この第1の実施例に係る気圧センサ
の構成によれば、ハイブリッドIC基板11の表面の一
部に感圧素子13を直接設置する必要がなくなると共
に、ハイブリッドIC基板の11表面の一部にトリミン
グ抵抗を設置する必要がなくなるので、例えば、そのハ
イブリッドIC基板11の横方向に対する大きさを10
×15mm程度にまで縮小させて全体の小型化を図るこ
とが可能となる。また、トリミング抵抗による感圧素子
13の感度やオフセット等の調整が、アンプIC12を
ハイブリッドIC基板11の表面の一部に設置する以前
において可能となることから、その調整の形態が極めて
容易でかつ効率的なものとなる。
As described above, according to the structure of the atmospheric pressure sensor according to the first embodiment, it is not necessary to directly install the pressure sensitive element 13 on a part of the surface of the hybrid IC substrate 11, and the surface of the hybrid IC substrate 11 is removed. Since it is not necessary to install a trimming resistor in a part of the hybrid IC substrate 11, for example, the size of the hybrid IC substrate 11 in the lateral direction is
It is possible to reduce the size to about 15 mm and to reduce the overall size. Further, since the sensitivity, offset, etc. of the pressure sensitive element 13 can be adjusted by the trimming resistor before the amplifier IC 12 is installed on a part of the surface of the hybrid IC substrate 11, the adjustment form is extremely easy and It will be efficient.

【0023】次に、図2(a)及び(b)は、本発明の
第2の実施例に係る気圧センサの内部構造をその上面形
態及び側面形態によって示す図である。同図に示すよう
に、回路基板としてのハイブリッドIC基板21の表面
の一部には、先の第1の実施例と同様に、増幅素子とし
てのアンプIC22を設置するための所定の領域(増幅
素子設置領域)が確保されており、この所定の領域に対
し、シリコン・ウェハから形成された5mm角程度の大
きさのベア・チップ状態のアンプIC22がその裏面に
合成樹脂等の材質から成る接着剤(図示せず)を介して
固定されている。ただし、ここで用いられるアンプIC
22は、その表面の主要部に感圧素子23を設置するた
めの所定の領域(感圧素子設置領域)を有しており、か
つ、その表面における主要部と周縁部とに入出力電極
(図示せず)を配置して成るものである。また、ハイブ
リッドIC基板21の表面には、所定の配線パターン
(図示せず)が選択的に配置されており、この配線パタ
ーンとアンプIC22の表面における入出力電極とは、
両者間の電気的な接続を図るために、金やアルミニウム
等の材質から成るボンディング・ワイヤ24でそれぞれ
結線されている。さらに、ハイブリッドIC基板21の
縁部には、その領域における配線パターンとの電気的な
接続を図って複数の入出力ピン25が配置されている。
なお、ハイブリッドIC基板21は、アンプIC22を
接着剤によって確実に設置できる絶縁性を有するもので
あれば、どのような材質のものを用いてもよい。
Next, FIGS. 2 (a) and 2 (b) are views showing the internal structure of the atmospheric pressure sensor according to the second embodiment of the present invention in terms of its top and side forms. As shown in the figure, in a part of the surface of the hybrid IC substrate 21 as a circuit substrate, a predetermined area (amplification) for installing the amplifier IC 22 as an amplification element is provided as in the first embodiment. A device mounting area) is secured, and a bare chip-shaped amplifier IC 22 formed of a silicon wafer and having a size of about 5 mm square is bonded to the predetermined area on the back surface with a material such as synthetic resin. It is fixed via an agent (not shown). However, the amplifier IC used here
22 has a predetermined area (pressure-sensitive element installation area) for installing the pressure-sensitive element 23 on the main part of its surface, and the input / output electrodes ( (Not shown) are arranged. Further, a predetermined wiring pattern (not shown) is selectively arranged on the surface of the hybrid IC substrate 21, and the wiring pattern and the input / output electrodes on the surface of the amplifier IC 22 are
In order to establish an electrical connection between the two, they are respectively connected by a bonding wire 24 made of a material such as gold or aluminum. Further, at the edge of the hybrid IC substrate 21, a plurality of input / output pins 25 are arranged for electrical connection with the wiring pattern in that region.
The hybrid IC substrate 21 may be made of any material as long as it has an insulating property so that the amplifier IC 22 can be surely installed with an adhesive.

【0024】そして、アンプIC22の表面の主要部に
おける感圧素子23を設置するための所定の領域には、
シリコン・ウェハから形成された気圧検出用の2×3m
m程度の大きさの感圧素子23がその表面を下にして載
置されている。なお、この感圧素子23は、先の第1の
実施例におけるものと全く同様な構造を有するものであ
り、ここでは、その表面の一部に配置された作動電極
(図示せず)とアンプIC22の表面における入出力電
極とが、両者間の電気的な接続を図るために、ハンダ等
の材質から成るバンプ26でそれぞれ接合されたものと
なっている(フリップチップ・ボンディング)。
Then, in a predetermined area for installing the pressure sensitive element 23 in the main part of the surface of the amplifier IC 22,
2 x 3m for pressure detection made from silicon wafer
A pressure-sensitive element 23 having a size of about m is placed with its surface facing down. The pressure-sensitive element 23 has a structure exactly the same as that of the first embodiment, and here, an operating electrode (not shown) and an amplifier arranged on a part of the surface thereof are provided. The input / output electrodes on the surface of the IC 22 are joined together by bumps 26 made of a material such as solder (flip chip bonding) in order to establish electrical connection between them.

【0025】ここで、この気圧センサも、先の第1の実
施例におけるのと同様、アンプIC22の表面の周縁部
に薄膜又は厚膜から成るトリミング抵抗(図示せず)を
さらに設置して構成されており、このトリミング抵抗に
よる感圧素子23の感度やオフセット等の調整を、アン
プIC22をハイブリッドIC基板21の表面の一部に
実際に設置する以前に行うことが可能となっている。す
なわち、この気圧センサを構成する際には、まず、未だ
ウェハ状態にあるアンプIC22に対して感圧素子23
を個々に設置した後にアンプIC22と感圧素子23と
をバンプ26でそれぞれ接合し、この状態で、トリミン
グ抵抗による感圧素子23の調整を施した後にウェハ状
態のアンプIC22をダイシングによって分割し、最後
に、その感圧素子23の設置及び調整を経た状態の分割
後のアンプIC22をハイブリッドIC基板21の表面
の一部に設置すればよい。
Here, this atmospheric pressure sensor is also constructed by further installing a trimming resistor (not shown) made of a thin film or a thick film on the peripheral portion of the surface of the amplifier IC 22 as in the first embodiment. Therefore, it is possible to adjust the sensitivity and offset of the pressure sensitive element 23 by the trimming resistor before actually installing the amplifier IC 22 on a part of the surface of the hybrid IC substrate 21. That is, when constructing this atmospheric pressure sensor, first, the pressure sensitive element 23 is added to the amplifier IC 22 which is still in the wafer state.
, The amplifier IC 22 and the pressure-sensitive element 23 are bonded to each other by the bumps 26, and in this state, the pressure-sensitive element 23 is adjusted by the trimming resistance, and then the amplifier IC 22 in the wafer state is divided by dicing, Finally, the divided amplifier IC 22 after the pressure sensitive element 23 has been installed and adjusted may be installed on a part of the surface of the hybrid IC substrate 21.

【0026】以上、この第2の実施例に係る気圧センサ
の構成によれば、先の第1の実施例の効果に加え、先の
第1の実施例のようなボンディング・ワイヤによる結線
が必要とされないので、縦方向に対する大きさを縮小さ
せて全体の小型化を図ることが可能となる。また、同様
の理由により、感圧素子23とのボンディング用のアン
プIC22の表面の周縁部における入出力電極が不要と
なることから、アンプIC22の表面の大きさを若干縮
小させることも可能となり、これに伴い、ハイブリッド
IC基板21の横方向に対する大きさを一段と縮小させ
て全体の一層の小型化を図ることが可能となる。
As described above, according to the structure of the atmospheric pressure sensor of the second embodiment, in addition to the effect of the first embodiment, the connection by the bonding wire as in the first embodiment is necessary. Therefore, it is possible to reduce the size in the vertical direction and reduce the size of the entire device. Further, for the same reason, since the input / output electrodes at the peripheral portion of the surface of the amplifier IC 22 for bonding with the pressure sensitive element 23 are unnecessary, it is possible to reduce the size of the surface of the amplifier IC 22 slightly. As a result, the size of the hybrid IC substrate 21 in the lateral direction can be further reduced, and the overall size can be further reduced.

【0027】続いて、図3は、本発明の第3の実施例に
係る気圧センサの内部構造をその側面形態によって示す
図である。同図に示すように、回路基板としてのハイブ
リッドIC基板31の表面の一部には、中間基板32を
設置するための所定の領域(中間基板設置領域)が確保
されており、この所定の領域に対し、0.5mm程度の
厚みを有する中間基板32がその裏面に合成樹脂等の材
質から成る接着剤33を介して固定されている。ただ
し、ここで用いられる中間基板32は、その表面の主要
部に感圧素子34を設置するための所定の領域(感圧素
子設置領域)を有しており、かつ、その表面における主
要部と周縁部との間にランド電極(図示せず)を連続的
に配置して成るものである。また、ハイブリッドIC基
板31の表面には、所定の配線パターン(図示せず)が
選択的に配置されており、この配線パターンと中間基板
32の表面の周縁部におけるランド電極とは、両者間の
電気的な接続を図るために、金やアルミニウム等の材質
から成るボンディング・ワイヤ35でそれぞれ結線され
ている。さらに、ハイブリッドIC基板31の縁部に
は、その領域における配線パターンとの電気的な接続を
図って複数の入出力ピン36が配置されている。
Next, FIG. 3 is a view showing the internal structure of a barometric pressure sensor according to a third embodiment of the present invention in a side view. As shown in the figure, a predetermined area (intermediate board installation area) for installing the intermediate board 32 is secured in a part of the surface of the hybrid IC board 31 as a circuit board. On the other hand, the intermediate substrate 32 having a thickness of about 0.5 mm is fixed to the back surface of the intermediate substrate 32 with an adhesive 33 made of a material such as synthetic resin. However, the intermediate substrate 32 used here has a predetermined area (pressure-sensitive element installation area) for installing the pressure-sensitive element 34 on the main part of its surface, and the main part on the surface is A land electrode (not shown) is continuously arranged between the peripheral portion and the peripheral portion. Further, a predetermined wiring pattern (not shown) is selectively arranged on the surface of the hybrid IC substrate 31, and the wiring pattern and the land electrode on the peripheral portion of the surface of the intermediate substrate 32 are provided between the two. In order to achieve electrical connection, they are respectively connected by bonding wires 35 made of a material such as gold or aluminum. Further, at the edge of the hybrid IC substrate 31, a plurality of input / output pins 36 are arranged for electrical connection with the wiring pattern in that region.

【0028】そして、中間基板32の表面の主要部にお
ける感圧素子34を設置するための所定の領域には、シ
リコン・ウェハから形成された気圧検出用の0.3mm
程度の厚みを有する感圧素子34がその表面を下にして
載置されており、さらに、この感圧素子34の表面の一
部に配置された作動電極(図示せず)と中間基板32の
表面の主要部におけるランド電極とは、両者間の電気的
な接続を図るために、ハンダ等の材質から成るバンプ3
7でそれぞれ接合されている(フリップチップ・ボンデ
ィング)。
A predetermined area for installing the pressure sensitive element 34 on the main part of the surface of the intermediate substrate 32 has a 0.3 mm pressure detecting area formed from a silicon wafer.
A pressure-sensitive element 34 having a certain thickness is placed with its surface facing downward, and further, an operating electrode (not shown) arranged on a part of the surface of this pressure-sensitive element 34 and the intermediate substrate 32. The land electrode on the main part of the surface is the bump 3 made of a material such as solder in order to establish an electrical connection between them.
They are bonded together at 7 (flip chip bonding).

【0029】ここで、中間基板32に用いる材質として
は、感圧素子34の材質と同一であるシリコンか、又
は、感圧素子34の裏面に接合される台座38の材質と
して用いられ、その感圧素子34の熱膨張率とほぼ同等
の熱膨張率を有している所定のガラスが好適である。す
なわち、中間基板32をシリコンで形成することでその
熱膨張率が感圧素子34の熱膨張率と必然的に同等とな
り、中間基板32を台座38の材質として用いられるガ
ラスで形成することでその熱膨張率34が感圧素子34
の熱膨張率とほぼ同等になる。そして、シリコン又はガ
ラスから成る中間基板32の表面に対してランド電極を
形成する際には、アルミニウム等の金属を薄膜技術又は
厚膜技術を用いて選択的に設置すればよく、これによ
り、感圧素子34の表面における作動電極に接合された
状態のバンプ37と、ハイブリッドIC基板31の表面
における配線パターンに結線された状態のボンディング
・ワイヤ35との両者間の電気的な接続が図られるよう
になる。
The material used for the intermediate substrate 32 is the same as the material of the pressure sensitive element 34, or the material of the pedestal 38 joined to the back surface of the pressure sensitive element 34. A predetermined glass having a coefficient of thermal expansion substantially equal to that of the pressure element 34 is suitable. That is, the thermal expansion coefficient of the intermediate substrate 32 is necessarily equal to that of the pressure sensitive element 34 by forming the intermediate substrate 32, and the intermediate substrate 32 is formed of glass used as the material of the pedestal 38. The coefficient of thermal expansion 34 is the pressure sensitive element 34.
The coefficient of thermal expansion is almost the same. Then, when the land electrode is formed on the surface of the intermediate substrate 32 made of silicon or glass, a metal such as aluminum may be selectively installed by using a thin film technique or a thick film technique. Electrical connection is made between the bump 37 bonded to the actuation electrode on the surface of the piezoelectric element 34 and the bonding wire 35 connected to the wiring pattern on the surface of the hybrid IC substrate 31. become.

【0030】以上、この第3の実施例に係る気圧センサ
の構成によれば、感圧素子34の表面における作動電極
と中間基板32の表面の主要部におけるランド電極とを
バンプ37で接合し、さらに、高低差がわずかな中間電
極32の表面の周縁部におけるランド電極とハイブリッ
ドIC基板31の表面における配線パターンとをボンデ
ィング・ワイヤ35で結線したので、そのボンディング
・ワイヤ35の結線に関する信頼性が充分に確保される
ようになる。また、中間基板32を成す材質の熱膨張率
が感圧素子34を成す材質の熱膨張率と同等であること
から、周囲温度が変動した場合でも中間基板32と感圧
素子34とは同等な割合で膨張又は縮小し、その周囲温
度の変動時のハイブリッドIC基板31の膨張又は縮小
によって生じる歪みが感圧素子に与える影響が可及的に
抑制されてその温度特性が飛躍的に向上するようにな
る。
As described above, according to the structure of the atmospheric pressure sensor of the third embodiment, the working electrode on the surface of the pressure sensitive element 34 and the land electrode on the main part of the surface of the intermediate substrate 32 are joined by the bumps 37, Further, since the land electrode on the peripheral portion of the surface of the intermediate electrode 32 having a small height difference and the wiring pattern on the surface of the hybrid IC substrate 31 are connected by the bonding wire 35, the reliability of the connection of the bonding wire 35 is improved. It will be fully secured. In addition, since the coefficient of thermal expansion of the material forming the intermediate substrate 32 is equal to the coefficient of thermal expansion of the material forming the pressure sensitive element 34, the intermediate substrate 32 and the pressure sensitive element 34 are equal even when the ambient temperature changes. The temperature characteristics are dramatically improved by expanding or contracting at a rate, and suppressing the influence of the strain caused by the expansion or contraction of the hybrid IC substrate 31 when the ambient temperature fluctuates on the pressure sensitive element as much as possible. become.

【0031】[0031]

【発明の効果】以上、詳細に説明したように、請求項
1、2又は3記載の発明によれば、回路基板の横方向に
対する大きさを縮小させて全体の小型化を図ることが可
能となると共にその縦方向に対する大きさをも若干縮小
させて全体の小型化を図ることが可能になり、さらに、
トリミング抵抗による感圧素子の調整の形態も極めて容
易かつ効率的なものとなる。
As described above in detail, according to the first, second or third aspect of the present invention, it is possible to reduce the size of the circuit board in the lateral direction and to reduce the overall size. In addition, it is possible to reduce the size in the vertical direction a little and to downsize the whole.
The adjustment of the pressure sensitive element by the trimming resistor is also extremely easy and efficient.

【0032】また、請求項4又は5記載の発明によれ
ば、ボンディング・ワイヤの結線に関する信頼性が充分
に確保されるようになり、さらに、周囲温度の変動時に
おける回路基板の膨張又は縮小によって生じる歪みが感
圧素子に与える影響が可及的に抑制されてその温度特性
が飛躍的に向上するようになる。
Further, according to the invention of claim 4 or 5, the reliability regarding the connection of the bonding wire can be sufficiently ensured, and further, by the expansion or contraction of the circuit board when the ambient temperature changes. The influence of the generated strain on the pressure sensitive element is suppressed as much as possible, and the temperature characteristic thereof is dramatically improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例に係る気圧センサの内部
構造をその上面形態及び側面形態によって示す図であ
る。
FIG. 1 is a diagram showing an internal structure of a barometric pressure sensor according to a first embodiment of the present invention by its top surface form and side surface form.

【図2】本発明の第2の実施例に係る気圧センサの内部
構造をその上面形態及び側面形態によって示す図であ
る。
FIG. 2 is a diagram showing an internal structure of a barometric pressure sensor according to a second embodiment of the present invention in terms of its top surface form and side face form.

【図3】本発明の第3の実施例に係る気圧センサの内部
構造をその側面形態によって示す図である。
FIG. 3 is a diagram showing an internal structure of a barometric pressure sensor according to a third embodiment of the present invention in a side view thereof.

【図4】ハイブリッドICの形態を採る従来の気圧セン
サの内部構造をその上面形態及び側面形態によって示す
図である。
FIG. 4 is a diagram showing an internal structure of a conventional barometric pressure sensor in the form of a hybrid IC by its top surface form and side face form.

【図5】図4に示したハイブリッドIC基板に対する感
圧素子の設置状態をその側面形態によって示す図であ
る。
FIG. 5 is a view showing a state in which a pressure sensitive element is installed on the hybrid IC substrate shown in FIG. 4 in a side view thereof.

【符号の説明】[Explanation of symbols]

11 ハイブリッドIC基板 12 アンプIC 13 感圧素子 14 ボンディング・ワイヤ 21 ハイブリッドIC基板 22 アンプIC 23 感圧素子 24 ボンディング・ワイヤ 26 バンプ 31 ハイブリッドIC基板 32 中間基板 34 感圧素子 35 ボンディング・ワイヤ 37 バンプ 11 Hybrid IC board 12 amplifier IC 13 Pressure-sensitive element 14 Bonding wire 21 Hybrid IC substrate 22 Amplifier IC 23 Pressure-sensitive element 24 Bonding wire 26 bumps 31 Hybrid IC substrate 32 Intermediate substrate 34 Pressure-sensitive element 35 Bonding wire 37 bumps

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 気圧検出用の感圧素子と、該感圧素子を
設置するための感圧素子設置領域を表面主要部に有する
と共に入出力電極を表面周縁部に配置して成る増幅素子
と、該増幅素子を設置するための増幅素子設置領域を表
面の一部に有して成る回路基板とを具備しており、前記
感圧素子をその裏面を以て前記増幅素子における感圧素
子設置領域に固定し、前記感圧素子の表面に配置されて
いる作動電極と前記増幅素子における入出力電極とをボ
ンディング・ワイヤで結線すると共に、前記増幅素子を
その裏面を以て前記回路基板における増幅素子設置領域
に固定し、前記増幅素子における入出力電極と前記回路
基板の表面に配置されている配線パターンとをボンディ
ング・ワイヤで結線して成ることを特徴とする気圧セン
サ。
1. A pressure-sensitive element for detecting atmospheric pressure, and an amplification element having a pressure-sensitive element installation region for installing the pressure-sensitive element in a main surface portion and input / output electrodes arranged in a peripheral edge portion of the surface. A circuit board having an amplification element installation area for installing the amplification element on a part of a front surface thereof, the pressure sensitive element having a back surface thereof in a pressure sensitive element installation area of the amplification element. While fixing, the working electrode arranged on the surface of the pressure sensitive element and the input / output electrode of the amplifying element are connected by a bonding wire, and the amplifying element is arranged on the rear surface of the amplifying element in the amplifying element installation region of the circuit board. An atmospheric pressure sensor, which is fixed and is formed by connecting an input / output electrode of the amplifying element and a wiring pattern arranged on the surface of the circuit board with a bonding wire.
【請求項2】 気圧検出用の感圧素子と、該感圧素子を
設置するための感圧素子設置領域を表面主要部に有する
と共に入出力電極を表面主要部と表面周縁部とに配置し
て成る増幅素子と、該増幅素子を設置するための増幅素
子設置領域を表面の一部に有して成る回路基板とを具備
しており、前記感圧素子をその表面を下にしつつ前記増
幅素子における感圧素子設置領域に載置し、前記感圧素
子の表面に配置されている作動電極と前記増幅素子の表
面主要部における入出力電極とをバンプで接合すると共
に、前記増幅素子をその裏面を以て前記回路基板におけ
る増幅素子設置領域に固定し、前記増幅素子の表面周縁
部における入出力電極と前記回路基板の表面に配置され
ている配線パターンとをボンディング・ワイヤで結線し
て成ることを特徴とする気圧センサ。
2. A pressure-sensitive element for detecting atmospheric pressure and a pressure-sensitive element installation area for installing the pressure-sensitive element are provided on the main surface portion, and input / output electrodes are arranged on the main surface portion and the peripheral portion of the surface. And a circuit board having an amplification element installation region for installing the amplification element on a part of the surface thereof, and the amplification is performed with the pressure sensitive element facing down. The amplification element is mounted on the pressure sensitive element installation region of the element, and the working electrode arranged on the surface of the pressure sensitive element and the input / output electrode on the main surface portion of the amplification element are joined by bumps. The back surface is fixed to the amplification element installation region of the circuit board, and the input / output electrodes on the peripheral portion of the front surface of the amplification element and the wiring pattern arranged on the front surface of the circuit board are connected by bonding wires. Features and Barometric pressure sensor.
【請求項3】 前記増幅素子の表面周縁部にトリミング
抵抗をさらに設置して成ることを特徴とする請求項1又
は2記載の気圧センサ。
3. The barometric pressure sensor according to claim 1, further comprising a trimming resistor installed on a peripheral portion of a surface of the amplifying element.
【請求項4】 気圧検出用の感圧素子と、該感圧素子を
設置するための感圧素子設置領域を表面主要部に有する
と共にランド電極を表面主要部と表面周縁部との間に連
続的に配置して成る中間基板と、該中間基板を設置する
ための中間基板設置領域を表面の一部に有して成る回路
基板とを具備しており、前記感圧素子をその表面を下に
しつつ前記中間基板における感圧素子設置領域に載置
し、前記感圧素子の表面に配置されている作動電極と前
記中間基板の表面主要部におけるランド電極とをバンプ
で接合すると共に、前記中間基板をその裏面を以て前記
回路基板における中間基板設置領域に固定し、前記中間
基板の表面周縁部におけるランド電極と前記回路基板の
表面に配置されている配線パターンとをボンディング・
ワイヤで結線して成ることを特徴とする気圧センサ。
4. A pressure-sensitive element for detecting atmospheric pressure, and a pressure-sensitive element installation region for installing the pressure-sensitive element in a main surface portion, and a land electrode is continuously provided between the main surface portion and the peripheral portion of the surface. And a circuit board having an intermediate substrate installation region for installing the intermediate substrate on a part of the surface thereof. While being mounted on the pressure sensitive element installation region of the intermediate substrate, the working electrode arranged on the surface of the pressure sensitive element and the land electrode on the main surface portion of the intermediate substrate are bonded by bumps, and the intermediate The substrate is fixed to the intermediate substrate installation region of the circuit substrate with the back surface thereof, and the land electrode in the peripheral portion of the surface of the intermediate substrate and the wiring pattern arranged on the surface of the circuit substrate are bonded.
An atmospheric pressure sensor characterized by being connected by a wire.
【請求項5】 前記中間基板を成す材質の熱膨張率が前
記感圧素子を成す材質の熱膨張率と同等であることを特
徴とする請求項4記載の気圧センサ。
5. The barometric sensor according to claim 4, wherein the coefficient of thermal expansion of the material forming the intermediate substrate is equal to the coefficient of thermal expansion of the material forming the pressure sensitive element.
JP3153098A 1991-06-25 1991-06-25 Atomospheric pressure sensor Withdrawn JPH051961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3153098A JPH051961A (en) 1991-06-25 1991-06-25 Atomospheric pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3153098A JPH051961A (en) 1991-06-25 1991-06-25 Atomospheric pressure sensor

Publications (1)

Publication Number Publication Date
JPH051961A true JPH051961A (en) 1993-01-08

Family

ID=15554935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3153098A Withdrawn JPH051961A (en) 1991-06-25 1991-06-25 Atomospheric pressure sensor

Country Status (1)

Country Link
JP (1) JPH051961A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005345304A (en) * 2004-06-03 2005-12-15 Denso Corp Pressure sensor
JP2008165949A (en) * 2007-01-05 2008-07-17 Hitachi Global Storage Technologies Netherlands Bv Magnetic disk unit, preamplifier for magnetic disk unit, and flexible printed cable assembly for magnetic disk unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005345304A (en) * 2004-06-03 2005-12-15 Denso Corp Pressure sensor
JP2008165949A (en) * 2007-01-05 2008-07-17 Hitachi Global Storage Technologies Netherlands Bv Magnetic disk unit, preamplifier for magnetic disk unit, and flexible printed cable assembly for magnetic disk unit

Similar Documents

Publication Publication Date Title
US11053115B2 (en) Multi-device transducer modulus, electronic apparatus including the transducer modulus and method for manufacturing the transducer modulus
US8186226B2 (en) Pressure sensor with on-board compensation
US10605684B2 (en) Multi-transducer modulus, electronic apparatus including the multi-transducer modulus and method for manufacturing the multi-transducer modulus
JPH08178778A (en) Semiconductor pressure detector
JPH05231971A (en) Pressure sensor and manufacture thereof
US20070238215A1 (en) Pressure transducer with increased sensitivity
US5279164A (en) Semiconductor pressure sensor with improved temperature compensation
JP3009104B2 (en) Semiconductor sensor and semiconductor sensor package
JPH0660906B2 (en) Semiconductor acceleration sensor
JPH051961A (en) Atomospheric pressure sensor
JPH0814517B2 (en) Semiconductor pressure sensor
JP3173256B2 (en) Semiconductor acceleration sensor and method of manufacturing the same
US6236095B1 (en) Carrier structure for semiconductor transducers
JP2002372474A (en) Semiconductor sensor device
JP2800463B2 (en) Method for manufacturing semiconductor device
JPH06258342A (en) Semiconductor acceleration sensor and semiconductor pressure sensor
JP3449417B2 (en) Pressure detector
JPH1168120A (en) Semiconductor pressure sensor and its production
JPS63191037A (en) Semiconductor pressure sensor
JPH09138173A (en) Semiconductor pressure sensor
JPS6056314B2 (en) Pressure/vibration-electrical conversion device
JPH0245721A (en) Absolute pressure type semiconductor pressure sensor
JPS5828754B2 (en) Pressure-electric conversion device
JPH02218171A (en) Semiconductor pressure sensor
JPS61245036A (en) Semiconductor pressure detector

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19980903