JPH05183680A - Close contact type image sensor unit - Google Patents

Close contact type image sensor unit

Info

Publication number
JPH05183680A
JPH05183680A JP3346131A JP34613191A JPH05183680A JP H05183680 A JPH05183680 A JP H05183680A JP 3346131 A JP3346131 A JP 3346131A JP 34613191 A JP34613191 A JP 34613191A JP H05183680 A JPH05183680 A JP H05183680A
Authority
JP
Japan
Prior art keywords
image sensor
light
sensor unit
substrate
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3346131A
Other languages
Japanese (ja)
Inventor
Tetsuro Nakamura
哲朗 中村
Shinji Fujiwara
慎司 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3346131A priority Critical patent/JPH05183680A/en
Publication of JPH05183680A publication Critical patent/JPH05183680A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To provide the simple, compact and inexpensive close contact type image sensor unit in which a semiconductor image sensor element is mounted on a printed circuit board simply in a short time, a convergent rod lens is assembled with no adjustment and an original is read with high resolution. CONSTITUTION:A semiconductor image sensor having a light receiving element array 6 is mounted on the surface of a 1st light transmission board 1 on the surface of which a circuit conductor layer 2 is formed via a light curing type insulation resin 5 in a face-down way so that its electrode 4 and the circuit conductor layer 2 are pressed into contact. A convergent rod lens array 7 placed between light transparent plates 8 is mounted on the rear side of the said 1st light transparent board 1 and a 2nd light transparent board 9 with the same thickness as the 1st light transparent board 1 is mounted on the rear side furthermore the rear side of the 2nd light transparent board 9 is used for an original close contact face and the original is lighted from the upper part with a light source (LED array) 10 to read the original.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光学画像を電気信号に変
換する密着型イメージセンサユニットに関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact image sensor unit for converting an optical image into an electric signal.

【0002】[0002]

【従来の技術】従来、密着型イメージセンサユニット
は、図2に於て導体配線を形成した基板21上に、受光
素子アレイ31を含む半導体素子22を導電性接着剤に
より固定し、半導体の電極29と回路導体層28とをワ
イヤーボンド法により金やアルミニウムなどの金属細線
30で接続し、さらに、その上から透明なガラス封止材
23によって封止してイメージセンサを作製し、このイ
メージセンサと、LEDアレイ25(光源)及び集束性
ロッドレンズ24とを、各々ホルダー27へ立体的に組
立、調整しなければならなかった。
2. Description of the Related Art Conventionally, in a contact type image sensor unit, a semiconductor element 22 including a light receiving element array 31 is fixed on a substrate 21 on which conductor wiring is formed in FIG. 29 and the circuit conductor layer 28 are connected by a metal thin wire 30 such as gold or aluminum by a wire bonding method, and further sealed with a transparent glass sealing material 23 to produce an image sensor. The LED array 25 (light source) and the converging rod lens 24 had to be three-dimensionally assembled and adjusted to the holder 27.

【0003】[0003]

【発明が解決しようとする課題】しかしながら上記のよ
うな構成では、ワイヤーボンド等複雑な工程が必要な上
に、イメージセンサユニットを作る上で、集束性ロッド
レンズをイメージセンサに位置調整して組み込む必要が
あるという課題があった。
However, in the above-mentioned structure, a complicated process such as wire bonding is required, and the focusing rod lens is position-adjusted and incorporated into the image sensor when the image sensor unit is manufactured. There was a problem that it was necessary.

【0004】[0004]

【課題を解決するための手段】上記課題を解決するため
に本発明は、表面上に回路導体層を形成した第一の透光
性基板に、光硬化型絶縁樹脂を介して受光素子アレイを
有する半導体素子を、フェイスダウンで、その素子上に
形成された取り出し電極が上記回路導体層に当接するよ
うに実装することによりイメージセンサを作成し、この
イメージセンサの裏面に集束性ロッドレンズアレイ及び
第一の透光性基板と同じ厚みの第二の透光性基板をはり
つけ、この裏面を原稿密着面とし、半導体素子の上方か
ら照明を当てる構造とした密着型イメージセンサユニッ
トを作製するものである。
In order to solve the above-mentioned problems, the present invention provides a first light-transmissive substrate having a circuit conductor layer formed on the surface thereof with a light-receiving element array via a photo-curable insulating resin. An image sensor is created by mounting the semiconductor element having the element face down so that the extraction electrode formed on the element is in contact with the circuit conductor layer, and a focusing rod lens array and a converging rod lens array are provided on the back surface of the image sensor. A second light-transmissive substrate having the same thickness as the first light-transmissive substrate is adhered, and the back surface of the second light-transmissive substrate is used as a document contact surface to produce a contact image sensor unit having a structure in which illumination is applied from above the semiconductor element. is there.

【0005】[0005]

【作用】本発明は上記した構成によって、位置調整が不
必要でしかも高分解能で原稿を読み取ることができるシ
ンプル、コンパクトで高性能の密着型イメージセンサユ
ニットが実現する。
With the above-described structure, the present invention realizes a simple, compact and high-performance contact type image sensor unit which does not require position adjustment and can read a document with high resolution.

【0006】[0006]

【実施例】以下本発明の実施例の密着型イメージセンサ
ユニットについて、図面を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A contact image sensor unit according to an embodiment of the present invention will be described below with reference to the drawings.

【0007】図1は、本発明の実施例における密着型イ
メージセンサユニットの正面断面図を示すものである。
1は第一透光性基板、2は第一透光性基板1の表面上に
形成された回路導体層、3は半導体イメージセンサ素子
として用いた半導体イメージセンサ素子、4は半導体イ
メージセンサ素子3に設けられている電極、5は半導体
イメージセンサ素子3を第一透光性基板1へ実装するた
めの透明光硬化型絶縁樹脂、6は半導体イメージセンサ
素子3に設けられている受光素子アレイ、7は第一透光
性基板1の裏面に装着れた集束性ロッドレンズアレイ、
8は集束性ロッドレンズアレイ7の側面で第一透光性基
板1の裏面に設けられた透光性プレート、9は集束性ロ
ッドレンズアレイ7及び透光性プレート8の裏面に装着
した第二透光性基板、10は第一透光性基板1、透光性
プレート8及び第二透光性基板9を通して原稿11を照
明するLEDアレイである。
FIG. 1 is a front sectional view of a contact image sensor unit according to an embodiment of the present invention.
Reference numeral 1 is a first transparent substrate, 2 is a circuit conductor layer formed on the surface of the first transparent substrate 3, 3 is a semiconductor image sensor element used as a semiconductor image sensor element, and 4 is a semiconductor image sensor element 3. , 5 is a transparent photo-curable insulating resin for mounting the semiconductor image sensor element 3 on the first transparent substrate 1, 6 is a light receiving element array provided in the semiconductor image sensor element 3, 7 is a focusing rod lens array mounted on the back surface of the first transparent substrate 1,
Reference numeral 8 is a side surface of the converging rod lens array 7 and a translucent plate provided on the back surface of the first translucent substrate 1, and 9 is a second side mounted on the back surfaces of the converging rod lens array 7 and the translucent plate 8. A transparent substrate 10 is an LED array that illuminates the original 11 through the first transparent substrate 1, the transparent plate 8 and the second transparent substrate 9.

【0008】以上のように構成された密着型イメージセ
ンサユニットの製造方法を説明する。
A method of manufacturing the contact type image sensor unit having the above structure will be described.

【0009】まず半導体プロセスを用いて単結晶シリコ
ン基板(ウエハ)上に、フォトトランジスタまたはフォ
トダイオード等の受光素子アレイ6とCCDやMOS、
バイポーラIC等のアクセス回路(図示せず)を設けた
ものを作る。各電極4については、2層Al配線のプロ
セスを用い、スパッタリング方法により数μm程度ウエ
ハ表面より突出した構造になっている。その後このウエ
ハを高精度ダイシング技術により切断し、半導体イメー
ジセンサ素子3を作る。次に厚さ1.1mm程度のガラ
スを用いた第一透光性基板1の表面上に、AuやAg等
の金属を、厚膜印刷を用いて厚さ3μm〜10μmで回
路導体層2を形成する。この透光性基板1の所定の位置
に、アクリレート系の透明光硬化型絶縁樹脂5をスタン
ピング法やスクリーン印刷法等で規定量塗布し、その上
に半導体イメージセンサ素子3を電極4が所定の回路導
体層2に当接するようにフェイスダウンで配置する。そ
の後、この半導体イメージセンサ素子3の上方から所定
の圧力を加えながら、透明光硬化型絶縁樹脂5に透光性
基板1を通して紫外線照射をし、硬化させ、実装を完了
する。さらにその上から透明シリコーン等の樹脂をディ
スペンサー等で塗布し、保護層(図示せず)を形成しイ
メージセンサを作製する。
First, a light receiving element array 6 such as a phototransistor or a photodiode and a CCD or a MOS are formed on a single crystal silicon substrate (wafer) by using a semiconductor process.
An access circuit (not shown) such as a bipolar IC is provided. Each electrode 4 has a structure in which it protrudes from the wafer surface by about several μm by a sputtering method using a two-layer Al wiring process. After that, this wafer is cut by a high-precision dicing technique to make a semiconductor image sensor element 3. Next, on the surface of the first translucent substrate 1 made of glass having a thickness of about 1.1 mm, a metal such as Au or Ag is used to form the circuit conductor layer 2 with a thickness of 3 μm to 10 μm by thick film printing. Form. An acrylate-based transparent photo-curable insulating resin 5 is applied to a predetermined position of the light-transmissive substrate 1 in a predetermined amount by a stamping method, a screen printing method, or the like, and a semiconductor image sensor element 3 and an electrode 4 having a predetermined electrode are applied thereon. It is arranged face down so as to contact the circuit conductor layer 2. After that, while applying a predetermined pressure from above the semiconductor image sensor element 3, the transparent photocurable insulating resin 5 is irradiated with ultraviolet rays through the transparent substrate 1 to be cured and the mounting is completed. Further, a resin such as transparent silicone is applied from above with a dispenser or the like to form a protective layer (not shown) to manufacture an image sensor.

【0010】さらにこのイメージセンサの第一透光性基
板1の裏面に透光性プレート8に挟まれた集束性ロッド
レンズアレイ7を透明接着剤で実装し、さらにその裏面
に第一透光性基板1と同じ厚み(1.1mm)のガラス
よりなる第二透光性基板9を同じく透明接着剤を用いて
実装する。最後に、LEDアレイ10をイメージセンサ
の上方で、近接した位置に配置する。この様にして、密
着型イメージセンサユニットが完成する。
Further, a converging rod lens array 7 sandwiched between translucent plates 8 is mounted on the back surface of the first translucent substrate 1 of this image sensor with a transparent adhesive, and the back surface thereof has the first translucent property. A second light-transmissive substrate 9 made of glass and having the same thickness (1.1 mm) as the substrate 1 is mounted using the same transparent adhesive. Finally, the LED array 10 is arranged in a close position above the image sensor. In this way, the contact image sensor unit is completed.

【0011】上記本発明の密着型イメージセンサユニッ
トの動作原理に関しては、LEDアレイ10により第一
透光性基板1、透光性プレート8及び第二透光性基板9
を通して原稿11を照明し、原稿からの光情報を集束性
ロッドレンズ7により正立等倍で受光素子アレイ6に導
き、電気信号に変換する仕組みになっている。
Regarding the operation principle of the contact type image sensor unit of the present invention, the LED array 10 includes a first transparent substrate 1, a transparent plate 8 and a second transparent substrate 9.
The document 11 is illuminated through the light source, and the light information from the document is guided to the light receiving element array 6 by the converging rod lens 7 at an erecting equal-magnification ratio and converted into an electric signal.

【0012】なお、ここで用いた半導体イメージセンサ
素子には、フォトトランジスタを受光素子アレイとし、
走査回路にはサイリスタシフトレジスタを用いたバイポ
ーラICチップを採用した。
In the semiconductor image sensor element used here, a phototransistor is used as a light receiving element array,
A bipolar IC chip using a thyristor shift register is adopted for the scanning circuit.

【0013】上記の様に、集束性ロッドレンズアレイ7
を無調整で組み立てた本発明の密着型イメージセンサユ
ニットの分解能は、MTF(モシ゛ュレーション-トランスファ-ファンクショ
ン)値が約60%(4lp/mm)と高い値を示した。
As described above, the focusing rod lens array 7
The contact type image sensor unit of the present invention assembled without adjustment had a high MTF (modulation-transfer-function) value of about 60% (4 lp / mm).

【0014】[0014]

【発明の効果】以上のように本発明のイメージセンサユ
ニットによれば、半導体イメージセンサ素子を複雑な金
属細線による配線(ワイヤーボンド)作業を行なわず、
また、半導体素子においてもバンプ電極を形成すること
なく、回路導体層を設けた透光性基板に、高信頼性で実
装することができ、さらに光学的に無調整で集束性ロッ
ドレンズ等を組み立てることができ、非常にシンプル、
コンパクト、かつ低コストで原稿を読み取ることができ
る。
As described above, according to the image sensor unit of the present invention, the semiconductor image sensor element is not subjected to the wiring (wire bonding) work with a complicated metal thin wire,
Further, even in the case of a semiconductor element, it can be mounted with high reliability on a light-transmissive substrate provided with a circuit conductor layer without forming bump electrodes, and assembling a focusing rod lens or the like without optical adjustment. Can be very simple,
The original is compact and can be read at low cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】第1の発明の実施例の密着型イメージセンサの
正面断面図である。
FIG. 1 is a front sectional view of a contact image sensor according to an embodiment of the first invention.

【図2】従来例の正面断面図である。FIG. 2 is a front sectional view of a conventional example.

【符号の説明】[Explanation of symbols]

1 第一透光性基板 2 回路導体層 3 半導体イメージセンサ素子 4 電極 5 透明光硬化型絶縁樹脂 6 受光素子アレイ 7 集束性ロッドレンズアレイ 8 透光性プレート 9 第二透光性基板 10 LEDアレイ 11 原稿 21 基板 22 半導体イメージセンサ素子 23 ガラス封止材 24 集束性ロッドレンズアレイ 25 LEDアレイ 26 原稿 27 ホルダー 28 回路導体層 29 半導体素子電極 30 金属細線 31 受光素子アレイ DESCRIPTION OF SYMBOLS 1 1st translucent board 2 Circuit conductor layer 3 Semiconductor image sensor element 4 Electrode 5 Transparent light hardening type insulating resin 6 Light receiving element array 7 Focusing rod lens array 8 Translucent plate 9 2nd translucent substrate 10 LED array DESCRIPTION OF SYMBOLS 11 manuscript 21 substrate 22 semiconductor image sensor element 23 glass sealing material 24 converging rod lens array 25 LED array 26 manuscript 27 holder 28 circuit conductor layer 29 semiconductor element electrode 30 metal fine wire 31 light receiving element array

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 表面上に回路導体層を形成した第一の透
光性基板と、この第一の透光性基板の表面上に、受光素
子アレイを有する半導体素子とを備え、上記半導体素子
はフェイスダウンで、その素子上に形成された取り出し
電極が上記回路導体層に当接する構造をし、上記透光性
基板の裏面には、上記受光素子アレイに対応するように
集束性ロットレンズアレイを実装し、更にその裏面に、
第二の透光性基板を実装し、この第二の透光性基板の裏
面を原稿密着面とし、上記半導体素子の上方に光源を設
けた密着型イメージセンサユニット。
1. A semiconductor device comprising: a first light-transmitting substrate having a circuit conductor layer formed on a surface thereof; and a semiconductor element having a light-receiving element array on the surface of the first light-transmitting substrate. Is a face-down structure in which the extraction electrode formed on the element is in contact with the circuit conductor layer, and on the back surface of the transparent substrate, a focusing lot lens array corresponding to the light receiving element array is formed. Mounted on the back side,
A contact-type image sensor unit in which a second light-transmissive substrate is mounted, a back surface of the second light-transmissive substrate is used as a document contact surface, and a light source is provided above the semiconductor element.
【請求項2】 受光素子アレイを有する半導体素子を第
一の透光性基板の表面に実装するのに透明光硬化型絶縁
樹脂を用いた請求項1記載の密着型イメージセンサユニ
ット
2. The contact type image sensor unit according to claim 1, wherein a transparent photo-curable insulating resin is used to mount the semiconductor element having the light receiving element array on the surface of the first transparent substrate.
【請求項3】 第一の透光性基板と第二の透光性基板の
厚みが等しい請求項1記載の密着型イメージセンサユニ
ット
3. The contact image sensor unit according to claim 1, wherein the first transparent substrate and the second transparent substrate have the same thickness.
JP3346131A 1991-12-27 1991-12-27 Close contact type image sensor unit Pending JPH05183680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3346131A JPH05183680A (en) 1991-12-27 1991-12-27 Close contact type image sensor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3346131A JPH05183680A (en) 1991-12-27 1991-12-27 Close contact type image sensor unit

Publications (1)

Publication Number Publication Date
JPH05183680A true JPH05183680A (en) 1993-07-23

Family

ID=18381342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3346131A Pending JPH05183680A (en) 1991-12-27 1991-12-27 Close contact type image sensor unit

Country Status (1)

Country Link
JP (1) JPH05183680A (en)

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