JPH0517864A - Base material having hard carbon film - Google Patents
Base material having hard carbon filmInfo
- Publication number
- JPH0517864A JPH0517864A JP19744891A JP19744891A JPH0517864A JP H0517864 A JPH0517864 A JP H0517864A JP 19744891 A JP19744891 A JP 19744891A JP 19744891 A JP19744891 A JP 19744891A JP H0517864 A JPH0517864 A JP H0517864A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- intermediate layer
- hard film
- carbon hard
- carbon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、表面に中間層を介して
カーボン硬質膜を形成した基材に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate having a carbon hard film formed on its surface with an intermediate layer interposed therebetween.
【０００２】[0002]
【従来の技術】従来技術によるカーボン硬質膜を形成し
た基材は、黒色を呈し、ダイヤモンドと良く似た性質を
持っており、機械的硬度が大きく、低摩擦係数、高熱伝
導率であり、電気絶縁性、耐蝕性に優れていることか
ら、装飾品、医療機器、磁気ヘッド、工具等、あらゆる
分野でのコーティングが提案されている。2. Description of the Related Art A substrate having a carbon hard film formed by a conventional technique has a black color and has properties similar to those of diamond, has a large mechanical hardness, a low friction coefficient, a high thermal conductivity, and an electrical conductivity. Because of its excellent insulation and corrosion resistance, coatings in various fields such as ornaments, medical devices, magnetic heads, tools, etc. have been proposed.
【０００３】カーボン硬質膜を基材表面に直接形成させ
た場合、表面の密着が非常に弱いことから特開昭５９─
１４３４９８号公報のように、カーボン硬質膜と密着の
良い中間層として、シリコン、アモルファスシリコンな
どが提案されている。When a carbon hard film is directly formed on the surface of a substrate, the adhesion of the surface is very weak, and therefore, JP-A-59-59
As disclosed in Japanese Patent No. 143498, silicon, amorphous silicon, etc. have been proposed as an intermediate layer having good adhesion to a carbon hard film.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、基材表
面に直接形成させた場合、基材の種類によって、カーボ
ン硬質膜が形成できない、あるいは剥離するなどの問題
があり、結果的に基材を限定せざるを得なかった。However, when it is formed directly on the surface of the base material, there is a problem that the carbon hard film cannot be formed or peels off depending on the kind of the base material. As a result, the base material is limited. I had to do it.
【０００５】また、シリコン、アモルファスシリコンな
どカーボン硬質膜と密着の良い膜を中間層として介在さ
せたものについてはカーボン硬質膜と中間層との密着性
よりも、基材と中間層の密着性が悪いことに問題があ
り、非常に応用範囲の狭いものであった。Further, in the case where a film having good adhesion to a carbon hard film such as silicon or amorphous silicon is interposed as an intermediate layer, the adhesion between the base material and the intermediate layer is higher than that between the carbon hard film and the intermediate layer. There was a problem with it, and it had a very narrow range of applications.
【０００６】本発明の目的は、上記問題を解決し、基材
とカーボン硬質膜の密着性を向上させる中間層を形成す
ることにより、安定性、信頼性が優れ、基材の種類に限
定されることなく応用範囲の広いカーボン硬質膜を形成
した基材を提供するところにある。The object of the present invention is to solve the above problems and form an intermediate layer for improving the adhesion between the base material and the carbon hard film, whereby the stability and reliability are excellent and the type of the base material is limited. It is intended to provide a base material on which a carbon hard film having a wide range of applications is formed without any use.
【０００７】[0007]
【課題を解決するための手段】本発明は、表面に中間層
を介してカーボン硬質膜を形成した基材において、中間
層がＳｉＯx （０．１≦ｘ≦０．５）の式で示される非
化学量論的な組成の酸化シリコンであることを特徴とす
るものである。According to the present invention, in a substrate having a carbon hard film formed on the surface thereof with an intermediate layer, the intermediate layer is represented by the formula of SiO x (0.1 ≦ x ≦ 0.5). It is characterized by being a non-stoichiometric composition of silicon oxide.
【０００８】[0008]
【実施例】以下本発明の実施例を図面に基づいて詳述す
る。図１は実施例を示すカーボン硬質膜を被覆した部材
の要部断面図である。Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a sectional view of an essential part of a member coated with a carbon hard film showing an embodiment.
【０００９】基材１を洗浄した後、基材１上に、中間層
２である特定の組成をもつ酸化シリコンおよびカーボン
硬質膜３を形成する。After the base material 1 is washed, a silicon oxide and carbon hard film 3 having a specific composition, which is the intermediate layer 2, is formed on the base material 1.
【００１０】中間層２である特定の組成をもつ酸化シリ
コンはＰＶＤ法の中の例えばスパッタリング法を使用し
た場合は、真空槽内を１×１０-5Torr以下の真空度に排
気し、基材１表面を充分に清浄するために、アルゴンガ
スを導入し、イオンボンバードを行う。For the silicon oxide having a specific composition which is the intermediate layer 2, when the PVD method such as the sputtering method is used, the inside of the vacuum chamber is evacuated to a vacuum degree of 1 × 10 −5 Torr or less, and the substrate is 1 In order to sufficiently clean the surface, argon gas is introduced and ion bombardment is performed.
【００１１】つぎに、真空槽内に微量の酸素ガスを導入
しアルゴンガスとの混合ガスを反応ガスとして１〜５×
１０-3Torrに保持する。そして、シリコンターゲットを
スパッタし基材１上に膜厚０．５μｍの酸化シリコンを
形成する。Next, a small amount of oxygen gas is introduced into the vacuum chamber, and a mixed gas with argon gas is used as a reaction gas in an amount of 1 to 5 ×.
Hold at 10 -3 Torr. Then, a silicon target is sputtered to form silicon oxide having a film thickness of 0.5 μm on the base material 1.
【００１２】次に基材１上に形成された中間層２上に炭
化水素を含有するガス雰囲気中におけるプラズマ重合処
理によりカーボン硬質膜３を形成する。例えばプラズマ
ＣＶＤ法を用いた場合は、真空槽内にマッチングボック
スを介して高周波電源と接続されているカソード電極上
に中間層２が形成された基材１を設置する。Next, a carbon hard film 3 is formed on the intermediate layer 2 formed on the base material 1 by plasma polymerization in a gas atmosphere containing a hydrocarbon. For example, when the plasma CVD method is used, the base material 1 in which the intermediate layer 2 is formed on the cathode electrode connected to the high frequency power source through the matching box is installed in the vacuum chamber.
【００１３】真空槽を排気後、ガス導入口より炭化水素
ガスであるメタンガスを導入し、プラズマを発生させ、
膜厚約１μｍのカーボン硬質膜３を形成した。成膜条件
としては真空度０．１Torr、高周波１３．５６ＭＨｚ、
高周波電力３００Ｗで行った。After evacuating the vacuum chamber, methane gas, which is a hydrocarbon gas, is introduced from the gas introduction port to generate plasma,
A carbon hard film 3 having a film thickness of about 1 μm was formed. The film forming conditions are vacuum degree 0.1 Torr, high frequency 13.56 MHz,
The high frequency power was 300 W.
【００１４】以上のようにしてカーボン硬質膜３を形成
した本発明の基材を分析した結果、中間層２はＳｉＯx
（ｘ＝０．３）の式で示される非化学量論的な組成の酸
化シリコンであることが判った。また、ｘが０．５をこ
えると中間層２とカーボン硬質膜３間の密着が悪く、ｘ
が０．１未満であると基材１と中間層２の密着が悪いこ
とも判った。好ましくはｘ＝０．１以上、ｘ＝０．３以
下が良い。As a result of analyzing the base material of the present invention on which the carbon hard film 3 is formed as described above, the intermediate layer 2 is formed of SiO x.
It was found to be a silicon oxide having a non-stoichiometric composition represented by the formula (x = 0.3). If x exceeds 0.5, the adhesion between the intermediate layer 2 and the carbon hard film 3 is poor, and x
It was also found that when the ratio was less than 0.1, the adhesion between the base material 1 and the intermediate layer 2 was poor. Preferably, x = 0.1 or more and x = 0.3 or less.
【００１４】さらに、本発明のカーボン硬質膜３を形成
した基材１と従来の純粋なシリコンを中間層に用いカー
ボン硬質膜を形成した基材とを耐摩耗試験により比較を
行った。試験機に試料を固定し、摩耗輪に炭化珪素６０
０番の研磨紙を貼り付け、２．５ｋｇの荷重をかけて摩
耗輪を回転させて、カーボン硬質膜が形成された試料の
基材が露出するまでのサイクル数を比較した。結果は本
発明のものが４００サイクルで、従来のものが１００サ
イクルで基材が露出した。Further, the substrate 1 on which the carbon hard film 3 of the present invention was formed and the conventional substrate on which the carbon hard film was formed using pure silicon as an intermediate layer were compared by an abrasion resistance test. Fix the sample on the tester and use silicon carbide 60 on the wear wheel.
No. 0 polishing paper was attached, the wear wheel was rotated by applying a load of 2.5 kg, and the number of cycles until the base material of the sample on which the carbon hard film was formed was exposed was compared. As a result, the substrate of the present invention was exposed after 400 cycles and the conventional one after 100 cycles.
【００１５】尚、本実施例では中間層２の形成方法をス
パッタリング法を用いたが、これに代えてイオンプレー
ティング法などのＰＶＤ法あるいはＣＶＤ法でもよい。
また、カーボン硬質膜３の形成もスパッタリング法でも
可能である。Although the sputtering method is used as the method for forming the intermediate layer 2 in this embodiment, a PVD method such as an ion plating method or a CVD method may be used instead.
Further, the carbon hard film 3 can also be formed by a sputtering method.
【００１６】[0016]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、基材上に中間層として特定の組成をもつ酸化シ
リコンを介在させカーボン硬質膜を形成させることによ
り、優れた耐摩耗性と強固な密着性がえられ、信頼性に
優れたカーボン硬質膜を形成した基材を提供することが
でき、応用範囲が大幅に広がった。As is apparent from the above description, according to the present invention, excellent wear resistance can be obtained by forming a carbon hard film on a substrate with silicon oxide having a specific composition interposed as an intermediate layer. It is possible to provide a base material on which a carbon hard film having excellent reliability and strong adhesion and excellent reliability is formed, and the range of application is greatly expanded.
【図１】本発明の実施例を示すカーボン硬質膜を形成し
た基材の要部断面図である。FIG. 1 is a cross-sectional view of a main part of a base material on which a carbon hard film is formed showing an embodiment of the present invention.
【符号の説明】 １ 基材 ２ 中間層 ３ カーボン硬質膜[Explanation of symbols] 1 base material 2 intermediate layer 3 carbon hard film
Claims (1)
形成した基材において、中間層がＳｉＯx （０．１≦ｘ
≦０．５）の式で示される非化学量論的な組成の酸化シ
リコンであることを特徴とするカーボン硬質膜を形成し
た基材。Claim: What is claimed is: 1. A base material having a carbon hard film formed on the surface thereof via an intermediate layer, wherein the intermediate layer is SiO x (0.1 ≦ x).
A substrate having a carbon hard film formed thereon, which is silicon oxide having a non-stoichiometric composition represented by the formula: ≦ 0.5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19744891A JPH0517864A (en) | 1991-07-12 | 1991-07-12 | Base material having hard carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19744891A JPH0517864A (en) | 1991-07-12 | 1991-07-12 | Base material having hard carbon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0517864A true JPH0517864A (en) | 1993-01-26 |
Family
ID=16374679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19744891A Pending JPH0517864A (en) | 1991-07-12 | 1991-07-12 | Base material having hard carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0517864A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012246545A (en) * | 2011-05-30 | 2012-12-13 | Denso Corp | Sliding member and sliding system using the same |
-
1991
- 1991-07-12 JP JP19744891A patent/JPH0517864A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012246545A (en) * | 2011-05-30 | 2012-12-13 | Denso Corp | Sliding member and sliding system using the same |
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