JPH05173168A - Liquid crystal spatial optical modulating element - Google Patents

Liquid crystal spatial optical modulating element

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Publication number
JPH05173168A
JPH05173168A JP33735691A JP33735691A JPH05173168A JP H05173168 A JPH05173168 A JP H05173168A JP 33735691 A JP33735691 A JP 33735691A JP 33735691 A JP33735691 A JP 33735691A JP H05173168 A JPH05173168 A JP H05173168A
Authority
JP
Japan
Prior art keywords
liquid crystal
light
semiconductor layer
voltage
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33735691A
Other languages
Japanese (ja)
Inventor
Yukio Tojo
行雄 東條
Shunichi Sato
俊一 佐藤
Toshihiko Takano
俊彦 高野
Terutaka Tokumaru
照高 徳丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP33735691A priority Critical patent/JPH05173168A/en
Publication of JPH05173168A publication Critical patent/JPH05173168A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To omit a process for forming a transparent electrode and a reflection layer in a manufacture process and to eliminate the need for a driving device such as a power source for driving liquid crystal by employing a semiconductor layer which provides abnormal light photovoltanic effect for an optical address type liquid crystal spatial optical modulating element. CONSTITUTION:The semiconductor layer 3 of Sb2S3, etc., which provides the abnormal light photovoltanic effect and a liquid crystal layer 4 consisting of nematic liquid crystal, etc., are formed between transparent substrates 1 and 2 made of glass, etc. Write light 5 having wavelength for generating a large photoelectromotive voltage in the semiconductor layer 3 is made incident from the side of the semiconductor layer 3 for writing and the light part irradiated with the light generate the photoelectric motive voltage in the semiconductor layer 3 to apply the voltage to the liquid crystal. Consequently, a voltage pattern corresponding to the pattern of the write light 5 is applied to the liquid crystal and when read light 6a having wavelength which generates no photoelectromotive voltage is made incident from the side of the semiconductor layer 3, the light passes through the liquid crystal layer 4 to obtain read light 6b spatially modulated with the write light 5.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光を変調する手段とし
て液晶を用いる光アドレス型液晶空間光変調素子に関す
るもので、さらに詳しくは、液晶を駆動するために電圧
を印加する手段を必要としない液晶空間光変調素子に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photo-addressable liquid crystal spatial light modulator using liquid crystal as a means for modulating light, and more specifically, it requires means for applying a voltage to drive the liquid crystal. It does not relate to a liquid crystal spatial light modulator.

【0002】[0002]

【従来の技術】近年、大画面ディスプレイに応用される
投射型ディスプレイ装置や、光情報処理などの技術にお
いて、光を空間的に変調する手段として用いられる液晶
空間光変調素子の研究が盛んになってきた。この液晶空
間光変調素子は、二次元情報を光により直接書き込む光
アドレス型と、時系列電気信号により書き込む電気アド
レス型とがある。このうち光アドレス型は、二次元情報
を瞬時に入力できる利点を有しており、また、電気アド
レス型が電極配線に伴う解像度の制約があるのに対し、
光アドレス型は高解像度を実現できる可能性を有してい
る。
2. Description of the Related Art In recent years, liquid crystal spatial light modulators used as means for spatially modulating light in projection display devices applied to large-screen displays and optical information processing technologies have become popular. Came. This liquid crystal spatial light modulation element is classified into an optical address type in which two-dimensional information is directly written by light and an electrical address type in which two-dimensional information is written by a time series electric signal. Among them, the optical address type has an advantage that two-dimensional information can be input instantly, and the electric address type has a limitation of resolution associated with electrode wiring,
The optical address type has a possibility of realizing high resolution.

【0003】従来の代表的な光アドレス型液晶空間光変
調素子は、図3に示すように、光導電層7、反射層8、
液晶層9を2枚の透明電極10を形成したガラス等の透
明基板11の間に挟んだ構造である。通常、光導電層7
にはアモルファスシリコン(a−Si)、単結晶シリコ
ン(Si)、硫化カドミウム(CdS)あるいはアモル
ファスシリコンのフォトダイオードなどが用いられ、反
射層8には誘電体多層構造の反射鏡、アルミニウム(A
l)等金属膜などが用いられ、液晶層9には強誘電性液
晶、ネマチック液晶などが用いられ、透明電極10には
ITOなどが用いられ、また光導電層7と反射層8との
間に遮光層が形成される場合もある。
As shown in FIG. 3, a typical conventional photo-addressable liquid crystal spatial light modulator has a photoconductive layer 7, a reflective layer 8,
It has a structure in which the liquid crystal layer 9 is sandwiched between transparent substrates 11 such as glass on which two transparent electrodes 10 are formed. Usually photoconductive layer 7
Amorphous silicon (a-Si), single crystal silicon (Si), cadmium sulfide (CdS), or amorphous silicon photodiode is used as the reflective layer 8, and a reflective mirror having a dielectric multilayer structure, aluminum (A-Si) is used as the reflective layer 8.
l) or the like, a metal film or the like is used, a ferroelectric liquid crystal, a nematic liquid crystal, or the like is used for the liquid crystal layer 9, ITO or the like is used for the transparent electrode 10, and between the photoconductive layer 7 and the reflective layer 8. In some cases, a light-shielding layer may be formed.

【0004】次に、この従来の代表的な光アドレス型液
晶空間光変調素子の動作原理について述べる。両端の透
明電極10に交流あるいは直流の電圧を印加し、図3の
ように、光導電層7側から明暗のパターンを有する書き
込み光12を光導電層7に投射すると、光が照射された
明部は光導電層7のインピーダンスが低下し、光が照射
されない暗部に比べて高い電圧が液晶に印加される。こ
のため、書き込み光12のパターンに相当する電圧パタ
ーンが液晶に加わり、読み出し光13aを液晶層9側か
ら照射すると、液晶層9において電圧パターンに応じて
読み出し光13aの光学特性が変化する。このようにし
て、液晶層9を介して反射層8により反射された読み出
し光13bは、書き込み光12により空間的に変調され
る。
Next, the operation principle of this conventional typical photo-address type liquid crystal spatial light modulator will be described. When an AC or DC voltage is applied to the transparent electrodes 10 at both ends and the writing light 12 having a bright and dark pattern is projected onto the photoconductive layer 7 from the photoconductive layer 7 side, as shown in FIG. In the area, the impedance of the photoconductive layer 7 is lowered, and a higher voltage is applied to the liquid crystal than in the dark area where the light is not irradiated. Therefore, when a voltage pattern corresponding to the pattern of the writing light 12 is applied to the liquid crystal and the reading light 13a is irradiated from the liquid crystal layer 9 side, the optical characteristics of the reading light 13a in the liquid crystal layer 9 change according to the voltage pattern. In this way, the read light 13b reflected by the reflective layer 8 via the liquid crystal layer 9 is spatially modulated by the write light 12.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、前記従
来の液晶空間光変調素子は、液晶を駆動させるのに、液
晶層に電圧を印加するための透明電極を形成しなければ
ならず、また、外部から電圧を供給するための電源や駆
動装置を必要とした。このため、液晶空間光変調素子の
作製工程において、透明基板上に透明電極を形成する工
程が必要不可欠であることや、また、液晶空間光変調素
子を用いた装置においては、液晶を駆動するための電源
等の駆動装置を組み込まなければならないなどの欠点を
有した。
However, in the above-mentioned conventional liquid crystal spatial light modulator, in order to drive the liquid crystal, a transparent electrode for applying a voltage to the liquid crystal layer must be formed, and the external liquid crystal light modulator needs to be formed. It required a power supply and a driving device to supply the voltage from. Therefore, in the manufacturing process of the liquid crystal spatial light modulation element, the step of forming the transparent electrode on the transparent substrate is indispensable, and in the device using the liquid crystal spatial light modulation element, the liquid crystal is driven. However, it has a drawback in that a driving device such as a power source of the above must be incorporated.

【0006】また、前記従来の液晶空間光変調素子は、
反射型であるため反射層を形成しなければならなかっ
た。特に誘電体多層構造の反射鏡を形成する場合は、フ
ッ化マグネシウム(MgF2)等の低屈折率物質と硫化
亜鉛(ZnS)等の高屈折率物質を交互に高精度の膜厚
制御を行いながら何層も積層しなければならず、極めて
困難で経済的にもコストの高い方法であった。
Further, the above-mentioned conventional liquid crystal spatial light modulator is
Since it is a reflection type, a reflection layer had to be formed. In particular, when forming a reflecting mirror having a dielectric multilayer structure, a low-refractive index material such as magnesium fluoride (MgF 2 ) and a high-refractive index material such as zinc sulfide (ZnS) are alternately controlled with high precision. However, many layers had to be laminated, which was a very difficult and economically expensive method.

【0007】本発明は、液晶空間光変調素子の作製工程
において液晶を駆動させるための透明電極を形成する工
程及び反射層を形成する工程を省略することができ、ま
た、液晶を駆動させるための電源等の駆動装置を必要と
しない、安価な光アドレス型液晶空間光変調素子の提供
を目的とする。
The present invention can omit the step of forming the transparent electrode for driving the liquid crystal and the step of forming the reflective layer in the manufacturing process of the liquid crystal spatial light modulating element, and can also drive the liquid crystal. An object of the present invention is to provide an inexpensive photo-addressable liquid crystal spatial light modulator that does not require a driving device such as a power source.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するた
め、光を変調する手段として液晶を用いる光アドレス型
液晶空間光変調素子において、液晶層と異常光起電力効
果を示す半導体層を有し、また、前記半導体層は、Sb
23、Sb2Se3、CdTe、Cd3As2、PbS、P
bI2、GaAs、Ga2Te3、GaP、InP、In
Te、AgInTe2、ZnS、ZnSe、HgTe等
の半導体材料からなり、さらに、前記半導体層は、Sb
23、Sb2Se3、CdTe、Cd3As2、PbS、P
bI2、GaAs、Ga2Te3、GaP、InP、In
Te、AgInTe2、ZnS、ZnSe、HgTe等
の半導体材料を斜方蒸着により形成される。
In order to solve the above problems, in an optically addressed liquid crystal spatial light modulator using liquid crystal as a means for modulating light, a liquid crystal layer and a semiconductor layer exhibiting an abnormal photovoltaic effect are provided. The semiconductor layer is Sb
2 S 3 , Sb 2 Se 3 , CdTe, Cd 3 As 2 , PbS, P
bI 2 , GaAs, Ga 2 Te 3 , GaP, InP, In
It is made of a semiconductor material such as Te, AgInTe 2 , ZnS, ZnSe, and HgTe, and the semiconductor layer is made of Sb.
2 S 3 , Sb 2 Se 3 , CdTe, Cd 3 As 2 , PbS, P
bI 2 , GaAs, Ga 2 Te 3 , GaP, InP, In
A semiconductor material such as Te, AgInTe 2 , ZnS, ZnSe, and HgTe is formed by oblique vapor deposition.

【0009】[0009]

【作用】本発明で用いる異常光起電力効果は、The Anom
alous Photovoltaic Effect. PANKOVE J I(RCA Laborat
ories): Physical Status Solidi A 61,127(1980)等の
文献に詳述されており、斜方蒸着により形成されるいく
つかの半導体材料において、エネルギギャップより数倍
大きな光起電圧の値が得られる光起電力効果である。ま
た光照射により生じる光起電圧の値は、照射光の波長に
対する依存性を示し、特定の照射光の波長で大きな光起
電圧を発生し、別の特定の波長で光起電圧を生じない。
[Operation] The abnormal photovoltaic effect used in the present invention is
alous Photovoltaic Effect. PANKOVE JI (RCA Laborat
(Articles): Physical Status Solidi A 61, 127 (1980) and others, and in some semiconductor materials formed by oblique evaporation, a photovoltage that is several times larger than the energy gap is obtained. It is an electromotive force effect. Further, the value of the photovoltage generated by the light irradiation shows the dependence on the wavelength of the irradiation light, a large photovoltage is generated at the wavelength of the specific irradiation light, and no photovoltage is generated at another specific wavelength.

【0010】従って、この異常光起電力効果を有する半
導体層と液晶層を組み合わせることにより、大きな光起
電圧を生じる波長の明暗のパターンを有する書き込み光
を半導体層側から照射して書き込めば、光が照射された
明部は半導体層において光起電力効果により光起電圧を
生じ、この光起電圧が液晶に印加される。このため、書
き込み光のパターンに相当する電圧パターンが液晶に加
わり、光起電圧を生じない波長の読み出し光を書き込み
光と同じく半導体層側から照射すれば、半導体層で光起
電圧を生じることなく、液晶層において電圧パターンに
応じて読み出し光の光学特性が変化する。このようにし
て、書き込み光により空間的に変調された読み出し光が
得られる。
Therefore, if the semiconductor layer having the extraordinary photovoltaic effect and the liquid crystal layer are combined, the writing light having the pattern of light and dark of the wavelength that produces a large photovoltaic voltage is irradiated from the semiconductor layer side to write the light. In the semiconductor layer, the bright portion irradiated with is generated a photovoltaic voltage by the photovoltaic effect, and this photovoltaic voltage is applied to the liquid crystal. Therefore, if a voltage pattern corresponding to the pattern of the writing light is applied to the liquid crystal and the reading light of a wavelength that does not generate the photovoltage is irradiated from the semiconductor layer side like the writing light, the photovoltage is not generated in the semiconductor layer. In the liquid crystal layer, the optical characteristics of the read light change according to the voltage pattern. In this way, the read light spatially modulated by the write light is obtained.

【0011】このように本発明によれば、上記のような
異常光起電力効果を示す半導体層を液晶空間光変調素子
に採用することにより、作製工程において液晶を駆動さ
せるための透明電極を形成する工程及び反射層を形成す
る工程を省略することができ、また、液晶を駆動させる
ための電源等の駆動装置を必要としない、安価な光アド
レス型液晶空間光変調素子を構成することが可能にな
る。
As described above, according to the present invention, by adopting the semiconductor layer exhibiting the above-mentioned extraordinary photovoltaic effect in the liquid crystal spatial light modulation element, the transparent electrode for driving the liquid crystal is formed in the manufacturing process. It is possible to omit the process for forming the reflective layer and the process for forming the reflective layer, and to configure an inexpensive optical address liquid crystal spatial light modulator that does not require a driving device such as a power source for driving the liquid crystal. become.

【0012】[0012]

【実施例】以下、本発明の一実施例を図面を参照して説
明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

【0013】図1は、本発明による液晶空間光変調素子
の構造を示す断面図である。図1のように、透明基板1
と透明基板2の間には、異常光起電力効果を示す半導体
層3、及び液晶層4が形成されている。半導体層3で大
きな光起電圧を生じる波長の明暗のパターンを有する書
き込み光5を半導体層3側から照射して書き込めば、光
が照射された明部は半導体層3において異常光起電力効
果により光起電圧を生じ、この光起電圧が液晶に印加さ
れる。このため、書き込み光5のパターンに相当する電
圧パターンが液晶に加わり、光起電圧を生じない波長の
読み出し光6aを書き込み光5と同じく半導体層3側か
ら照射すれば、半導体層3で光起電圧を生じることな
く、液晶層4において電圧パターンに応じて読み出し光
6aの光学特性が変化する。このようにして、書き込み
光5により空間的に変調された読み出し光6bが得られ
る。
FIG. 1 is a sectional view showing the structure of a liquid crystal spatial light modulator according to the present invention. As shown in FIG. 1, the transparent substrate 1
The semiconductor layer 3 exhibiting an extraordinary photovoltaic effect and the liquid crystal layer 4 are formed between the transparent substrate 2 and the transparent substrate 2. When writing is performed by irradiating writing light 5 having a pattern of light and dark of wavelengths that generate a large photovoltaic voltage in the semiconductor layer 3 from the side of the semiconductor layer 3 and writing, the bright portion irradiated with the light is caused by an abnormal photovoltaic effect in the semiconductor layer 3. A photovoltaic voltage is generated and this photovoltaic voltage is applied to the liquid crystal. Therefore, a voltage pattern corresponding to the pattern of the writing light 5 is applied to the liquid crystal, and if the reading light 6a having a wavelength that does not generate a photovoltaic voltage is irradiated from the semiconductor layer 3 side like the writing light 5, the semiconductor layer 3 emits light. The optical characteristics of the read light 6a change in the liquid crystal layer 4 according to the voltage pattern without generating a voltage. In this way, the read light 6b spatially modulated by the write light 5 is obtained.

【0014】実施例においては、透明基板1、2として
ガラス基板を用いた。一方のガラス基板には、異常光起
電力効果を示す半導体層3としてSb23膜を、基板温
度100°C、蒸着角度45°の条件で斜方蒸着により
1μmの膜厚に形成し、このSb23膜上に液晶が垂直
配向するように配向処理を施した。また他方のガラス基
板には、液晶が垂直配向するように配向処理を施した。
そしてこれらのガラス基板の配向処理を施した面をスペ
ーサを介して接着し、ネマチック液晶を挟持させて液晶
層4を形成した。
In the examples, glass substrates were used as the transparent substrates 1 and 2. On one of the glass substrates, an Sb 2 S 3 film was formed as a semiconductor layer 3 exhibiting an abnormal photovoltaic effect to a film thickness of 1 μm by oblique vapor deposition under the conditions of a substrate temperature of 100 ° C. and a vapor deposition angle of 45 °. An alignment treatment was performed on the Sb 2 S 3 film so that the liquid crystal was vertically aligned. The other glass substrate was subjected to an alignment treatment so that the liquid crystal was vertically aligned.
Then, the surfaces of these glass substrates that had been subjected to the alignment treatment were adhered to each other through a spacer, and a nematic liquid crystal was sandwiched to form a liquid crystal layer 4.

【0015】ここで異常光起電力効果を示す半導体層と
して用いたSb23膜における照射光の波長に対する光
起電圧の依存性は図2のようになり、530nmの光に
対しては、最も大きな光起電圧を生じ、590nmの光
に対しては光起電圧を生じないことがわかる。
The dependence of the photovoltaic voltage on the wavelength of the irradiation light in the Sb 2 S 3 film used as the semiconductor layer exhibiting the extraordinary photovoltaic effect is as shown in FIG. 2, and for 530 nm light, It can be seen that the largest photovoltaic voltage is generated and no photovoltaic voltage is generated for light of 590 nm.

【0016】次に、上記のように、異常光起電力効果を
示す半導体層3としてSb23膜を用いて作製した液晶
空間光変調素子において、空間光変調動作の実験を行っ
た。まず、書き込み光5として530nmの波長の光に
より明暗のパターンを書き込みを行い、読み出し光6a
として590nmの光を照射した。そして、空間光変調
素子を通過した読み出し光6bを観察した結果、書き込
み光のパターンに応じて明部のみの位相が変化している
ことが確認できた。これは、Sb23膜で大きな光起電
圧を生じる波長である530nmの書き込み光5をSb
23膜に照射して書き込みを行い、光が照射された明部
で異常光起電力効果により発生した光起電圧が書き込み
光5のパターンに相当する電圧パターンに応じて液晶層
4に印加され、ネマチック液晶の配向状態が変化したた
め、Sb23膜で光起電圧を生じない590nmの読み
出し光6aが液晶層4を通過し、書き込み光5のパター
ンにより空間的に位相変調された読み出し光6bが得ら
れたのである。
Next, as described above, the spatial light modulation operation of the liquid crystal spatial light modulator manufactured by using the Sb 2 S 3 film as the semiconductor layer 3 exhibiting the extraordinary photovoltaic effect was tested. First, as the writing light 5, a light and dark pattern is written with light having a wavelength of 530 nm, and the reading light 6a
Was irradiated with light of 590 nm. Then, as a result of observing the read light 6b that has passed through the spatial light modulator, it was confirmed that the phase of only the bright portion was changed according to the pattern of the write light. This is because the writing light 5 having a wavelength of 530 nm, which is a wavelength at which a large photovoltaic voltage is generated in the Sb 2 S 3 film,
2 The S 3 film is irradiated to perform writing, and the photovoltaic voltage generated by the abnormal photovoltaic effect in the bright portion irradiated with light is applied to the liquid crystal layer 4 according to the voltage pattern corresponding to the pattern of the writing light 5. Then, since the alignment state of the nematic liquid crystal is changed, the read light 6a of 590 nm which does not generate a photovoltage in the Sb 2 S 3 film passes through the liquid crystal layer 4 and is read spatially phase-modulated by the pattern of the write light 5. The light 6b is obtained.

【0017】なお、実施例において、異常光起電力効果
を示す半導体層3としてSb23膜を用いたが、Sb2
Se3、CdTe、Cd3As2、PbS、PbI2、Ga
As、Ga2Te3、GaP、InP、InTe、AgI
nTe2、ZnS、ZnSe、HgTe等の半導体材料
においても異常光起電力効果が確認されており、これら
を異常光起電力効果を示す半導体層3として用いても、
同様の効果が得られることは明らかである。
[0017] In the examples, it was used Sb 2 S 3 film as the semiconductor layer 3 exhibiting abnormal photovoltaic effect, Sb 2
Se 3 , CdTe, Cd 3 As 2 , PbS, PbI 2 , Ga
As, Ga 2 Te 3 , GaP, InP, InTe, AgI
Anomalous photovoltaic effects have been confirmed in semiconductor materials such as nTe 2 , ZnS, ZnSe, and HgTe, and even if these are used as the semiconductor layer 3 exhibiting the anomalous photovoltaic effect,
It is clear that the same effect can be obtained.

【0018】[0018]

【発明の効果】以上のように、本発明によれば、異常光
起電力効果を示す半導体層を液晶空間光変調素子に採用
することにより、作製工程において液晶を駆動させるた
めの透明電極を形成する工程及び反射層を形成する工程
を省略することができ、また、液晶を駆動させるための
電源等の駆動装置を必要としない、安価な光アドレス型
液晶空間光変調素子が極めて簡単な構成で作製すること
ができる。また、このような生産性の高い液晶空間光変
調器により、多くの応用が可能となる。
As described above, according to the present invention, by adopting a semiconductor layer exhibiting an extraordinary photovoltaic effect in a liquid crystal spatial light modulator, a transparent electrode for driving a liquid crystal is formed in a manufacturing process. It is possible to omit the step of forming a reflective layer and the step of forming a reflection layer, and does not require a driving device such as a power source for driving the liquid crystal. It can be made. Further, such a highly productive liquid crystal spatial light modulator enables many applications.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による液晶空間光変調素子の構造を示す
断面図。
FIG. 1 is a sectional view showing the structure of a liquid crystal spatial light modulator according to the present invention.

【図2】Sb23膜における照射光の波長に対する光起
電圧の依存性を示すグラフ。
FIG. 2 is a graph showing the dependence of the photovoltaic voltage on the wavelength of irradiation light in the Sb 2 S 3 film.

【図3】従来の液晶空間光変調素子の構造を示す断面
図。
FIG. 3 is a sectional view showing a structure of a conventional liquid crystal spatial light modulator.

【符号の説明】 1,2,11 透明基板 3 異常光起電力効果を示す半導体層 4,9 液晶層 5,12 書き込み光 6a,6b,13a,13b 読み出し光 7 光導電層 8 反射層 10 透明電極[Explanation of reference signs] 1,2,11 Transparent substrate 3 Semiconductor layer exhibiting extraordinary photovoltaic effect 4,9 Liquid crystal layer 5,12 Write light 6a, 6b, 13a, 13b Read light 7 Photoconductive layer 8 Reflective layer 10 Transparent electrode

フロントページの続き (72)発明者 徳丸 照高 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内Continued Front Page (72) Inventor Terutaka Tokumaru 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 光を変調する手段として液晶を用いる光
アドレス型液晶空間光変調素子において、液晶層と異常
光起電力効果を示す半導体層を有することを特徴とする
液晶空間光変調素子。
1. A photo-addressable liquid crystal spatial light modulator using liquid crystal as a means for modulating light, comprising a liquid crystal layer and a semiconductor layer exhibiting an extraordinary photovoltaic effect.
【請求項2】 前記半導体層は、Sb23、Sb2
3、CdTe、Cd3As2、PbS、PbI2、GaA
s、Ga2Te3、GaP、InP、InTe、AgIn
Te2、ZnS、ZnSe、HgTe等の半導体材料か
らなることを特徴とする特許請求の範囲第1項記載の液
晶空間光変調素子。
2. The semiconductor layer comprises Sb 2 S 3 and Sb 2 S
e 3 , CdTe, Cd 3 As 2 , PbS, PbI 2 , GaA
s, Ga 2 Te 3 , GaP, InP, InTe, AgIn
The liquid crystal spatial light modulator according to claim 1, which is made of a semiconductor material such as Te 2 , ZnS, ZnSe, and HgTe.
【請求項3】 前記半導体層は、Sb23、Sb2
3、CdTe、Cd3As2、PbS、PbI2、GaA
s、Ga2Te3、GaP、InP、InTe、AgIn
Te2、ZnS、ZnSe、HgTe等の半導体材料を
斜方蒸着により形成されることを特徴とする特許請求の
範囲第1項記載の液晶空間光変調素子。
3. The semiconductor layer comprises Sb 2 S 3 and Sb 2 S
e 3 , CdTe, Cd 3 As 2 , PbS, PbI 2 , GaA
s, Ga 2 Te 3 , GaP, InP, InTe, AgIn
The liquid crystal spatial light modulator according to claim 1, wherein a semiconductor material such as Te 2 , ZnS, ZnSe, and HgTe is formed by oblique vapor deposition.
JP33735691A 1991-12-20 1991-12-20 Liquid crystal spatial optical modulating element Pending JPH05173168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33735691A JPH05173168A (en) 1991-12-20 1991-12-20 Liquid crystal spatial optical modulating element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33735691A JPH05173168A (en) 1991-12-20 1991-12-20 Liquid crystal spatial optical modulating element

Publications (1)

Publication Number Publication Date
JPH05173168A true JPH05173168A (en) 1993-07-13

Family

ID=18307854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33735691A Pending JPH05173168A (en) 1991-12-20 1991-12-20 Liquid crystal spatial optical modulating element

Country Status (1)

Country Link
JP (1) JPH05173168A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005210017A (en) * 2004-01-26 2005-08-04 Yoshinori Oyama Photoelectromotive element
CN100445817C (en) * 2005-04-18 2008-12-24 京东方显示器科技公司 Tablet liquid crystal display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005210017A (en) * 2004-01-26 2005-08-04 Yoshinori Oyama Photoelectromotive element
CN100445817C (en) * 2005-04-18 2008-12-24 京东方显示器科技公司 Tablet liquid crystal display device

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