JPH0517138A - Amorphous ferroelectric oxide material and its production - Google Patents

Abstract

PURPOSE:To provide an amorphous ferroelectric material usable as thin-film capacitor element, ferroelectric memory, electrooptical device, etc., and to provide a process for producing the material. CONSTITUTION:The objective material consists of a ternary oxide having amorphous structure and is composed mainly of a transition metal oxide (M2O3)- antimony oxide (Sb2O3)-LiNbO3 compound (ABO3), wherein M2O3 is at least one kind of oxide selected from the oxides of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zr, Nb, Mo, Pd, Hf, Ta, W, In and lanthanoid elements and ABO3 is an LiNbO3-type compound exhibiting ferroelectricity, antiferroelectricity or paraelectricity.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an amorphous ferroelectric oxide material capable of forming a thin film capacitor element, a ferroelectric memory, an electro-optical device and the like, and a method for producing the same.

[0002]

2. Description of the Related Art Conventionally, in an inorganic ferroelectric material represented by a perovskite dielectric material,
The ferroelectric property is expressed based on a certain rule in crystal symmetry. Similarly, in the LiNbO ₃ dielectric material, which is also known to exhibit ferroelectricity, the cause of the ferroelectricity is due to a certain rule in crystal symmetry. For this reason, it is important to enhance the crystallinity of the material in order to make the ferroelectricity remarkable. In fact, LiN
In the material having the bO ₃ crystal structure, many efforts have been made in relation to the above-mentioned matters such as adjusting the firing temperature or improving the sintering density in order to enhance the crystallinity. On the other hand, in the case of capacitors, ferroelectric memories, etc. to which such ferroelectrics are applied, when the material is polycrystalline, the existence of grain boundaries causes a decrease in withstand voltage, and leakage current occurs along the grain boundaries. However, there is a problem that it causes a loss in the condenser and impairs the retention of information in the memory. In addition, it is difficult to miniaturize various devices due to the existence of crystal grain boundaries, which is a big problem in today's miniaturization of various devices applying dielectric characteristics. Also, when developing a dielectric material as an electro-optical element, the presence of crystal grain boundaries causes light scattering, which reduces the optical signal intensity in order to make the optical device function,
There are serious problems such as increased noise. To solve these problems, there is an attempt to configure a ferroelectric material in a thin film to form a microdevice-shaped capacitor, a ferroelectric memory, or an electro-optical device. In order to avoid the generation of crystal grain boundaries, attempts have been made to produce single crystal dielectric thin films and amorphous dielectric thin films. In the single crystal dielectric thin film, a single crystal substrate of sapphire, MgO, GGG, or the like is used as a substrate in consideration of matching of lattice constants with the thin film in order to promote epitaxial growth. Further, a method such as a sputtering method or a liquid phase epitaxial growth method (LPE method) is used for forming the film.
However, in any of the methods, an expensive single crystal substrate is used as a substrate, various conditions must be controlled strictly for epitaxial growth, and the crystal axis of crystal growth is restricted to the orientation of the single crystal. Further, if the difference between the lattice constant of the single crystal substrate and the lattice constant of the thin film becomes too large, it becomes difficult to grow the single crystal thin film, and thus actual thin film production is not easy. Furthermore, in the epitaxial growth method as described above, for thin film single crystallization,
Since a high heat treatment temperature of approximately 600 ° C. or higher is required, there is also a problem that the heat treatment of the film impairs the surface property of the film, which has been a major barrier in making a ferroelectric material into a microdevice.

Amorphous thin films, like single crystal thin films,
Since there is no crystal grain boundary, it is expected to be put to practical use in order to solve various problems occurring in the above-mentioned ferroelectric polycrystalline material. However, there is no conventional example in which an amorphous ferroelectric thin film is produced using a LiNbO ₃ type dielectric.

[0004]

The object of the present invention is that the material according to the present invention has an amorphous structure, and for this reason there is no grain boundary or pores found in a sintered body, a capacitor with small loss and a ferroelectric memory with high information retention. , Or a material applicable to an electro-optical device or the like.

[0005]

SUMMARY OF THE INVENTION The present invention is a transition metal oxide (M ₂ O ₃ ) -antimony oxide (Sb ₂ O ₃ ) -L.
A ternary oxide containing an iNbO ₃ type compound (ABO ₃ ) as a main component is deposited on a substrate by using an amorphous film forming means such as vacuum deposition or sputtering while maintaining the substrate temperature at 300 ° C. or lower. The above problem is solved by adopting a method in which a ferroelectric thin film is produced as it is without being subjected to heat treatment or the like, which is produced as a crystalline thin film. That is, the present invention is a transition metal oxide (M ₂ O ₃ ) -antimony oxide (Sb ₂ O ₃ )-
Amorphous ferroelectric material (provided that M ₂ O ₃ is Sc in terms of M ₂ O ₃ is composed of a ternary oxide containing a LiNbO ₃ type compound (ABO ₃ ) as a main component, and the ternary oxide has an amorphous structure. , Ti, V, Cr, Mn, F
e, Co, Ni, Y, Zr, Nb, Mo, Pd, Hf,
It is at least one selected from the group consisting of oxides of Ta, W, In and lanthanum series elements, and is a LiNbO ₃ type compound exhibiting ABO ₃ ferroelectricity. ) Is provided. Further, according to the present invention, the above ternary oxide is formed as an amorphous thin film on a substrate by using a film forming means while keeping the substrate temperature at 300 ° C. or lower, and the ferroelectric film is produced as it is. The present invention provides a method for producing an amorphous ferroelectric oxide material, which is characterized by obtaining an oxide material.

The amorphous ferroelectric oxide material of the present invention is a transition metal oxide (M ₂ O ₃ ) -antimony oxide (S).
b ₂ O ₃ ) -LiNbO ₃ type compound (ABO ₃ ) as a main component. Where M ₂ O ₃ is S
c, Ti, V, Cr, Mn, Fe, Co, Ni, Y, Z
r, Nb, Mo, Pd, Hf, Ta, W, In, and L
a, Ce, Pr, Nd, Sm, Eu, Gd, Tb, D
It is at least one selected from the group consisting of oxides of lanthanum series elements of y, Ho, Er, Tm, Yb and Lu, and ABO ₃ is a LiNbO ₃ type compound exhibiting ferroelectricity. The amorphous ferroelectric oxide material of the present invention is formed by forming the ternary oxide in the form of an amorphous structure. FIG. 1 shows a composition showing ferroelectricity while the thin film has an amorphous structure. The composition region is a region surrounded by α, β, γ, δ, ε, φ in FIG. Here, the straight line αβ is aM ₂ O ₃ − (1-a) Sb ₂ O ₃
The straight line βγ is 0.90Sb ₂ O ₃
Is a straight line represented by -0.10 (bM ₂ O _3- (1-b) ABO ₃ ), and the straight line γδ is cSb ₂ O _3- (1-c).
It is a straight line represented by ABO ₃ , and the straight line δε is 0.20.
_{(DSb 2 O 3 - (1} -d) M 2 O 3) -0.80AB
A straight line represented by O ₃ , and the straight line εφ is eABO ₃ −
(1-e) is a straight line represented by M ₂ O ₃ , and the straight line φα is 0.90 M ₂ O ₃ -0.10 (fABO _3- (1-f)
Sb ₂ O ₃ ), each of which has a composition line of 0.10 ≦ a ≦ 0.90 and 0.00 ≦ b ≦ 1.0.
0 and 0.20≤c≤0.90 and 0.00≤d≤1.
00 and 0.20 ≦ e ≦ 0.90 and 0.00 ≦ f ≦
It is a composition line defined in the range of 1.00. In the figure, ABO ₃ represents various LiNbO ₃ type dielectric materials (Li
Ferroelectric materials such as TaO ₃ and LiNbO ₃ ). In FIG. 1 and in the triangular composition diagram described later, the division of the three sides represents one scale of 0.1 (mol ratio). As can be seen from this figure, an amorphous film cannot be formed in a region where the concentration of the LiNbO ₃ type dielectric material is high. However, if M ₂ O ₃ or Sb ₂ O ₃ is excessively added to this, the material becomes amorphous and exhibits ferroelectricity.

According to the method for producing an amorphous ferroelectric thin film of the present invention, the above ternary oxide is formed as an amorphous thin film on a substrate using a film forming means while maintaining the substrate temperature at 300 ° C. or lower. By manufacturing, a ferroelectric oxide material can be obtained as it is. As the film forming means, a generally used thin film forming process such as a vacuum vapor deposition method and a sputtering method is used. During film formation, the substrate temperature was set to the crystallization temperature (500 to 6) of the amorphous composite oxide.
By forming a film in an oxygen atmosphere at a substrate temperature of 00 ° C.) or lower, preferably 300 ° C. or lower, an amorphous oxide thin film having ferroelectricity can be obtained. According to the present invention, a thin film exhibiting ferroelectric properties can be easily obtained without performing heat treatment for crystallizing a thin film after epitaxial growth or film formation using a single crystal substrate or the like at the time of film formation. For this reason, it is possible to significantly reduce the time and effort required to produce a ferroelectric thin film, and to produce a film with very good surface properties and without grain boundaries. It is expected to be applied to micro devices such as capacitors and electro-optical devices.

[0008]

【Example】

Example 1 An RF magnetron sputtering apparatus was used to prepare a thin film, and a stainless petri dish having a diameter of 76 mm and a depth of 4 mm was placed on a cathode plate, and Sb ₂ O ₃ and Fe ₂ were placed therein.
What was filled with a mixed powder of O ₃ and LiTaO ₃ was used as a target. Sb ₂ O ₃ , Fe ₂ O ₃ , LiTa
Each powder of O ₃ was wet-mixed for 30 minutes with a paint shaker using ethanol as a solvent, which was prepared by mixing powders of oxide materials, before being filled in a petri dish made of stainless steel. Thereafter, the solvent was removed and dried, and then the stainless dish was filled and used as a sputtering target. The sputtering gas is a mixed gas of Ar: O ₂ = 7: 3, and the purity of each gas of Ar and O ₂ is 99.
The thing of 995% or more was used. A (111) oriented Si wafer was used as the substrate. The Si wafer was an n-type and had a resistivity of about 1 (Ωcm). Si
An SiO ₂ layer having a film thickness of 200 nm is previously provided on the wafer by oxidation. The purpose of providing this layer is mainly to secure electrical insulation at the time of evaluation of dielectric properties. Prior to film formation, raise the substrate temperature to 200 ℃,
The desorption treatment of the water adsorbed on the substrate surface was mainly performed. Furthermore, pre-sputtering was performed for about 30 minutes before film formation to clean the target surface and stabilize the film quality and thin film composition during sputtering film formation.
The degree of vacuum is 2 × 10 ^-7 Tor before introducing the sputtering gas.
It was confirmed that the value was below r. During the sputtering film formation, the total gas pressure was kept constant at 25 mTorr. During sputtering, the copper anode fixing the substrate was water-cooled and the substrate temperature during film formation was maintained at 20 to 25 ° C. The high frequency input power was 110 W, and the sputtering film formation was performed for 30 to 60 minutes. The thin films obtained in this manner showed a change in film thickness due to a change in the sputtering rate depending on the composition of the target, but each thin film showed a film thickness of 500 to 1000 nm.

By the thin film forming process as described above, S
A sputtered thin film containing ternary b ₂ O ₃ , Fe ₂ O ₃ , and LiTaO ₃ was prepared. No. 2 in FIG. The compositions shown by the numbers 1 to 25 were prepared, and the film structure was evaluated and the dielectric properties were measured for each composition. When the correspondence between the target composition and the thin film composition of the obtained thin film was examined by the inductive plasma emission analysis method, it was found that the two compositions corresponded with an error of about 3%. Therefore, in the following description, the composition of the target is used as the composition of the thin film. The dielectric properties were evaluated by a soya tower circuit commonly used in the characterization. Using this circuit, the electric field dependence of the electric flux density (D) was evaluated and the value of spontaneous polarization (Ps) was obtained. In the evaluation of the dielectric property, the electrode configuration as shown in FIG. 3 was used, and the electrode 4 for applying an electric field to the thin film 1 was taken out from the oxide thin film 2 side so that two capacitors C ₁ could be equivalently formed. , C ₂ are connected in series to prevent the Schottky characteristic generated at the interface between the metal electrode and Si when the metal electrode is taken out from the Si 3 side, and an accurate dielectric evaluation is performed. As the metal electrode, an Au electrode having a thickness of about 100 nm and a diameter of 4 mm was formed on the surface of the thin film by a sputtering method.

As-deposited state (As-de) of the sputtering thin film produced by the above-mentioned thin film forming method.
The structure and dielectric properties of the (position state) were evaluated.
First, the results of evaluating the structure of the thin film will be described. FIG. 4 shows the XRD diffraction results of the films formed on the dotted line A in FIG. 2 after the sputter deposition of various compositions. No. shown in FIG. 10, No. 15, No. 18 is shown in FIG.
It corresponds to the number inside and represents the composition of the thin film sample. XR
A Cu target was used as the radiation source of D, and a monochromator was attached. In the XRD result shown in FIG. 4, the diffraction line corresponding to the (111) plane of Si used as the substrate is also seen to be superimposed on the diffraction result of the thin film. LiTaO
₃ Thin film No. In No. 7, the thin film was crystallized in the As-deposit state, but Sb ₂ O ₃ and Fe ₂ O
Compositions in which ₃ is excessive (No. 10, No. 15, No.
In 18), no X-ray diffraction line due to crystallization of the thin film was observed, which shows that the thin film is in an amorphous state.
Further, FIG. 5 shows the XRD diffraction result of the film after the sputter film formation of various compositions produced on the dotted line B of FIG. No. shown in FIG. 3, No. 16, No. 22 is shown in FIG.
It corresponds to the number inside and represents the composition of the thin film sample. Figure 5
As is clear from, XRD results show that Si (11
1) There is no clear diffraction line other than the diffraction line corresponding to the plane,
It can be seen that the thin films having these compositions all have an amorphous structure. Further, No. 2 shown in FIG. 1 to N
o. As a result of XRD analysis of all the 25 films, in the thin films indicated by black circles in FIG.
There is no clear diffraction line other than the diffraction line corresponding to the (111) plane, and the region surrounded by α, β, γ, δ, ε, φ in FIG. It was found that the thin film has an amorphous structure in the (-deposit state).

Then, in order to observe the fine structure of the amorphous structure, No. 1 in FIG. High-resolution TEM observation was performed on the film having the composition of 15. In TEM observation, etching is performed from the surface side and the substrate side of the thin film, and the structure near the midpoint in the thickness direction of the thin film is observed. According to this, the lattice image could not be recognized even at the resolution of 0.3 nm. The thin film sample was subjected to selected area electron diffraction in a region with a diameter of about 200 nm, and the observed diffraction ring showed a very wide halo pattern, indicating that the thin film has a very high amorphous property.

Next, the dielectric characteristics will be described. First,
FIG. 6 shows the change in the dielectric hysteresis loop on the dotted line A in FIG. No. on the same line. In the film of No. 7, the thin film became conductive, and the dielectric characteristics could not be evaluated. The number on the left shoulder of the hysteresis loop in FIG. 6 is
It corresponds to the number indicating the composition in FIG. As is clear from this result and the result of the structural analysis of FIG.
o. 10, No. 15, No. It was found that the thin film of 18 exhibits ferroelectricity while having an amorphous structure. In addition, the thin film composition on the straight line A in FIG.
_{(0.5Fe 2 O 3 -0.5Sb 2 O} 3) - (1-y)
When expressed as LiTaO ₃ , the dependence of the saturation charge density (Ps) of the thin film on y is shown. Figure 6 shows the saturated charge density.
From the hysteresis loop of the dielectric characteristics shown in
The electric field dependence of the electric flux density (D) at ˜500 kV / cm was extrapolated to the E = 0 axis, and the electric flux density at the point intersecting with the coaxial was defined as the saturated charge density. It can be seen that Ps is present over a wider composition range than in FIG. 7 and the thin film exhibits ferroelectricity, but on the same line, the ferroelectricity disappears in a composition region close to LiTaO ₃ . Understand.
It is considered that the phase precipitated in this composition region is not the ferroelectric phase but the paraelectric phase. Also, FIG. 2, line B
The composition dependence of the hysteresis loop was also shown for each composition (Fig. 8). The numbers on the left shoulder of the hysteresis loop in FIG. 8 correspond to the numbers indicating the composition in FIG. As is clear from this, it is clear that ferroelectricity is observed in the thin films in all compositions. The saturation charge density (Ps) was obtained by the method described above from this hysteresis loop. The composition change of the straight line B is 0.80 (xS
_{b 2 O 3 - (1-} x) Fe 2 O 3) -0.20LiTa
It is represented by the notation O ₃ . The dependence of Ps on x is shown in FIG. As can be seen from the figure, it can be seen that Ps exists for all x values and exhibits ferroelectricity. Further, the dielectric characteristics and the structure by X-ray were evaluated for the compositions of all the thin films shown in FIG. The results are shown together in the figure. That is, in the figure, the black circles indicate the composition of the thin film exhibiting amorphous ferroelectricity, and the shaded circles indicate the composition exhibiting paraelectricity while having an amorphous structure. Further, the white circles are crystalline thin films, and the thin films showed conductivity. The structure and dielectric properties of the thin films of various compositions examined on the same composition diagram are summarized. As is clear from this figure, the composition of the thin film material that exhibits ferroelectricity while having an amorphous structure is widely distributed in the figure, and in the figure, α, β,
Area surrounded by γ, δ, ε, φ (portion with thin ink)
Can be defined as a composition region in which ferroelectricity is exhibited while taking an amorphous structure. Table 1 shows the correspondence between the thin film composition and the saturation charge density Ps for all the compositions shown in FIG. About 42 for a thin film showing ferroelectricity
It has a saturated charge density of (nC / cm ² ) or more, and it is found that the charge density reaches a maximum of about 132 (nC / cm ² ), and it has sufficient practical characteristics as a ferroelectric. it is conceivable that.

[0013]

[Table 1]

Example 2 A thin film was formed by changing the substrate to a glass substrate by the film forming method described in Example 1. No. of Corning on the glass substrate. 7059 was used. No. 2 shown in FIG. 1
5 and No. 5 A thin film having a composition of 20 was prepared. The film thickness of the sputtered thin film was about 200 nm.
The prepared thin film had an amber color. In each of the thin films, an antireflection film was applied in the near infrared region, and the light transmittance was measured. FIG. 10 shows the light wavelength dependence of the transmittance. As can be seen from this result, it is understood that the amorphous ferroelectric thin film has a light transmittance of 90% or more in the near infrared region, and that the thin film can be applied to an electro-optical element.

Example 3 A thin film was prepared by using LiNbO ₃ instead of ferroelectric LiTaO ₃ as the LiNbO ₃ dielectric material by the same film forming method as in Example 1. The composition of the produced thin film is shown in the triangular composition diagram of FIG. 1 and No. 1 25-No. Four
The numbers up to 8 are shown as points with additional notes. As-dep
The osit thin film was subjected to structural analysis by dielectric properties and X-rays. The results are shown together in FIG. In the figure, the black circles indicate the composition of the thin film showing amorphous ferroelectricity, and the shaded circles indicate the composition of the thin film exhibiting paraelectricity while having an amorphous structure. Further, the white circles are crystalline thin films, which indicate the composition of the thin films having conductivity. From this result, in the triangular composition diagram, α,
It was found that the region surrounded by β, γ, δ, ε, φ (portion applied with thin ink) expresses amorphous ferroelectricity in the composition region applied with thin ink. Here, it has been found that even a LiNbO ₃ material which exhibits antiferroelectricity by itself shows remarkable ferroelectricity by adding Fe ₂ O ₃ or Sb ₂ O ₃ in excess. Table 2 shows a list of saturated charge densities for each composition shown in FIG. According to the table, in the Sb ₂ O ₃ —Fe ₂ O ₃ —LiNbO ₃ system amorphous ferroelectric thin film, the maximum is 168 (nC / cm).
² ) Saturated charge density was observed.

[0016]

[Table 2]

[0017] In Example _{4 M 2 O 3 -Sb 2 O} 3 -LiTaO 3 system, Table 3
Each thin film was prepared using the elements shown in. The thin film was manufactured by the method described in Example 1. Further, the structure evaluation of the thin film was performed by the X-ray diffraction method, and the conditions thereof were as described in Example 1. Furthermore, the method of evaluating the dielectric properties of the thin film is the same as in Example 1. However, in the sputtering film formation, M is Zr, Mo, Pd, Hf, T
In the case of a and W, metal fine powder of each element was used instead of M ₂ O ₃ as a target. Other Sc, T
i, V, Cr, Mn, Co, Ni, Y, Nb, In, L
a, Ce, Pr, Nd, Sm, Eu, Gd, Tb, D
For y, Ho, Er, Tm, Yb and Lu, M ₂ O ₃
Type oxide material was used as the target. Also, Ni ₂ O
_As for No. ₃ , since it contains water of crystallization, before using it as a target, it is heated up to about 200 ° C. and the water of crystallization is skipped,
Anhydrous. Films having compositions indicated by circles in FIG. 12 were prepared for all M elements, and the structure and dielectric properties of the films were evaluated in the As-deposit state. In the figure, the black circles indicate the composition of the thin film showing amorphous ferroelectricity, and the shaded circles indicate the composition of the thin film exhibiting paraelectricity while having an amorphous structure. Further, the white circles are crystalline thin films, indicating the composition of the thin films that became conductive. From this result, α, β,
Area surrounded by γ, δ, ε, φ (portion with thin ink)
It has been found that amorphous ferroelectricity is exhibited in the composition region where light black ink is applied. No. in the composition diagram Table 3 shows the saturated charge densities (Ps) measured at various M values for the film having the composition noted 49. From this, it can be understood that Ps is observed in all the thin films shown in the table and that the ferroelectric properties are exhibited in each thin film.

[0018]

[Table 3]

[0019]

As described above, M ₂ O ₃ --Sb ₂ O ₃ --A
By thinning a BO ₃ (ABO ₃ is a LiNbO ₃ type dielectric) thin film at a low substrate temperature by RF sputtering or the like, for example, at a substrate temperature of about 25 ° C., a highly transparent ferroelectric having an amorphous structure is formed. Thin film is obtained, and it can be applied to sensors, memories, and electro-optical elements that apply ferroelectricity.

[Brief description of drawings]

FIG. 1 is a composition system diagram for explaining the present invention.

FIG. 2 is a composition system diagram for explaining an example of the present invention, and an explanatory diagram of dielectric properties and a thin film structure.

FIG. 3 is a structural diagram of a thin film for explaining the dielectric property evaluation method of the present invention.

FIG. 4 is an X diagram for explaining an embodiment of the present invention.
It is a line diffraction pattern.

FIG. 5 is an X-ray diffraction pattern for explaining the same example.

FIG. 6 is a diagram showing the electric field dependence of dielectric properties for explaining the same example.

FIG. 7 is a graph showing composition dependence of saturated charge density for explaining the same embodiment.

FIG. 8 is a diagram showing the electric field dependence of dielectric properties for explaining the same example.

FIG. 9 is a diagram showing composition dependence of saturated charge density for explaining the same example.

FIG. 10 is a diagram showing wavelength-independent characteristics of light transmittance for explaining the embodiment.

FIG. 11 is a composition system diagram for explaining another embodiment of the present invention, and an explanatory diagram of dielectric characteristics and a thin film structure.

FIG. 12 is a composition system diagram for explaining another embodiment of the present invention, and an explanatory diagram of dielectric characteristics and a thin film structure.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Reference number within the agency FI Technical indication location H01G 7/06 7924-5E (72) Inventor Hiroyuki Nii 5 Ube, 1978, Kobegushi, Ube City, Yamaguchi Prefecture Usan Laboratory, Kosan Co., Ltd.

Claims (4)

[Claims] 1. A transition metal oxide (M ₂ O ₃₎ - antimony oxide (Sb ₂ O ₃₎ -LiNbO ₃ type compounds (ABO
An amorphous ferroelectric oxide material comprising a ternary oxide containing ₃ ) as a main component, and the ternary oxide having an amorphous structure. (However, M ₂ O ₃ is
Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Y,
At least one selected from the group consisting of oxides of Zr, Nb, Mo, Pd, Hf, Ta, W, In, and lanthanum series elements, and ABO ₃ is LiNbO exhibiting ferroelectricity.
It is a type ₃ compound. ) 2. The ternary oxide is M ₂ O ₃ , Sb ₂ O ₃ or A.
In the composition diagram of the three components of BO ₃ , aM ₂ O ₃ − (1-
a) Sb ₂ O _3, as well as, 0.90Sb ₂ O ₃ -0.1
0 (bM ₂ O _3- (1-b) ABO ₃ ) and cS
_{b 2 O 3 - (1-} c) ABO 3 and, 0.20 (d
_{Sb 2 O 3 - (1-} d) M 2 O 3) -0.80ABO 3
And eABO _3- (1-e) M ₂ O ₃ and
0.90 M ₂ O ₃ -0.10 (fABO _3- (1-f)
Sb ₂ O ₃ ) in each composition line represented by 0.10
≦ a ≦ 0.90 and 0.00 ≦ b ≦ 1.00 and 0.2
0 ≦ c ≦ 0.90 and 0.00 ≦ d ≦ 1.00 and 0.
The amorphous ferroelectric oxide according to claim 1, having a composition surrounded by six composition lines defined in a range of 20≤e≤0.90 and 0.00≤f≤1.00. material. 3. The amorphous ferroelectric oxide material according to claim 1 or 2, wherein the ternary oxide is formed in the form of a thin film. 4. A ternary oxide is formed as an amorphous thin film on a substrate using a film forming means while maintaining the substrate temperature at 300 ° C. or lower, and the ferroelectric oxide is produced as it is. The method for producing an amorphous ferroelectric oxide material according to claim 3, wherein a material is obtained.