JPH05166486A - Ion implantation device - Google Patents

Abstract

PURPOSE:To effect ion implantation over a wide area through making-large in diameter of the ion beams from a compact-sized ion source, and effect uniform ion implantation through adjustment of a beam intensity distribution and selection of an ion kind. CONSTITUTION:The ion beams from an ion source 1 describe different locuses of movement through passing through a fixed magnetic field generated from a sector 2, by which selection is made from among kinds of ions and a desired kind of ions is passed through an analyzing slit 3. It is accelerated by an acceleration tube 4 up to a specified energy. When passing through quartet pole magnetic lenses 61, 62, the beam section is made large into a rectangular shape. When passing through sextet pole magnetic lenses 51, 52, the beam comes to have a uniform intensity distribution in a horizontal direction X of the substrate surface. The reshaped ion beam propagates through a drift space and reaches a position P. A sensor means 7 senses the beam current, and a control means 81 reads the detection signal and adds thereto a beam current data to send the resulting signal to an overall controller 82. In response to the information sent thereto, it controls the current of the lenses 61, 62 and adjusts the beam size at a position P, to thereby make adjustment of the fixed intensity of the lenses 51, 52.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to an ion implanter.

[0002]

2. Description of the Related Art Ion implanters are used for manufacturing various semiconductor devices, modifying the surface of materials for wear resistance, corrosion resistance, etc.
It is widely used for forming a thin film such as a superconducting film on the surface of an object. This ion implantation apparatus usually turns a source gas into plasma, emits an ion beam through an ion passage hole of an ion source electrode in front of the plasma source, irradiates the surface of an object, and implants ions.

Therefore, the area range in which ions can be implanted depends on the diameter of the ion source. In order to perform ion implantation over a wide area, a large-diameter ion source that requires a special processing technique is used, the ion beam from the ion source is accelerated, and ions are implanted into a target such as a substrate.

[0004]

However, in such a conventional device, all the ion species extracted from the ion source are injected into the substrate or the like. Therefore, for example, when P is injected into the semiconductor substrate using PH ₃ gas, H is also injected at the same time, which serves as an energy source to heat the substrate,
There are problems such as deterioration of semiconductor quality.

Further, the ion beam intensity distribution at each portion of the ion implantation position depends only on the distribution of the ion passage holes of the ion source electrode. Therefore, the degree of freedom for adjusting the beam intensity distribution is limited. Further, as the implantation area increases, the diameter of the ion source must be increased, which makes manufacturing more difficult.

Therefore, the present invention does not require the use of a large-diameter ion source and uses a compact ion source to easily expand the ion beam diameter from the ion source to a desired size and implant ions into a large area. In addition, the intensity distribution state can be adjusted so that the beam intensity distribution is uniform over the entire wide area, and a desired ion species among the ions extracted from the ion source can be easily selected. It is an object of the present invention to provide an ion implantation device capable of implanting ions into a substrate.

[0007]

According to the above object, the present invention provides an ion source, an electromagnet for mass analysis (for example, a sector electromagnet) for selecting a desired ion species from an ion beam emitted from the ion source, and an ion emitted from the electromagnet. Of these, an analysis slit that removes unnecessary ions and passes the desired ion species, an electromagnet lens device that expands the diameter of the ion beam that has passed through the analysis slit, and a uniform ion beam intensity distribution at the injection position on the target object A correction electromagnet lens device for correcting so that the ion beam intensity distribution state at the ion implantation position is detected, a means for controlling the magnetic field of the mass analysis electromagnet so that a desired ion species can be selected, and at the implantation position. Based on the desired ion beam expansion diameter and the data from the beam intensity distribution state detecting means, Based on the data from the means for controlling the magnetic field of the electromagnet lens in the electromagnet lens device for enlarging the ion beam diameter so as to obtain the ion beam expansion diameter, the desired ion beam intensity distribution at the implantation position and the beam intensity distribution state detecting means. The present invention provides an ion implanting device, which is provided with means for controlling a magnetic field of an electromagnet lens in the correcting electromagnet lens device so as to obtain the desired beam intensity distribution.

If necessary, the apparatus may be provided with accelerating means for accelerating the ion beam after passing through the analysis slit, for example, an ion beam accelerating tube. Also,
A means for controlling the power source of the ion source and a means for controlling the power source of the acceleration means may be provided. Examples of the electromagnet lens device that expands the diameter of the ion beam include, for example, a multi-pole magnet lens that focuses the ion beam in one direction and diverges in a direction perpendicular to the direction, and a multipole magnet lens that diverges in the one direction and focuses in the perpendicular direction. A lens system is contemplated that includes a multipole magnet lens. As a typical example of such a multi-pole magnet lens,
A quadrupole magnet lens can be mentioned.

When the correction electromagnet lens device makes the ion beam intensity distribution in the implantation position uniform in one direction, the beam intensity distribution in the direction perpendicular to the one direction is also made uniform. The electrodes of the ion source can be formed such that the distribution of ion passage holes is rough or absent at the central portion and dense at both ends in the orthogonal direction. An example of the correction electromagnet lens device may include a device including a multipole magnet lens such as a hexapole magnet lens.

The ion source may be provided with a shutter device capable of opening and closing the ion beam at the beam exit thereof. The means for detecting the beam intensity distribution state at the ion implantation position may be, for example, one capable of detecting the two-dimensional distribution state of the beam, and more specifically, a beam such as a Faraday cup capable of measuring individual beam currents. An example is a detection system in which a plurality of detectors are two-dimensionally distributed.

[0011]

According to the ion implantation apparatus of the present invention, the ion beam emitted from the ion source is passed through the electromagnet for mass analysis whose magnetic field strength is controlled so that a desired ion species can be selected, so that the ion beam is required for ion implantation. Only the desired ionic species,
Alternatively, the ion beam is mainly composed of the ion species. Then, by the ion beam diameter expanding electromagnet lens device in which the magnetic field strength is controlled so as to obtain a desired expanded beam diameter,
A state in which the diameter of the ion beam is expanded according to the surface area of the target object to be ion-implanted, the target surface is irradiated, and the beam intensity distribution is made uniform in at least one direction by an electromagnet lens device for correcting the beam intensity distribution. And is ion-implanted with desired ion species over each part of the target surface.

The beam diameter expansion by the beam diameter enlarging electromagnet lens device and the beam intensity distribution correction by the beam intensity distribution correcting electromagnet lens device are performed by the beam intensity distribution detected by the means for detecting the beam intensity distribution state at the ion implantation position. A beam diameter enlarging electromagnet lens device and a correcting electromagnet lens so as to obtain the desired enlarging diameter and beam intensity distribution based on state data and a predetermined desired beam enlarging diameter and desired beam intensity distribution state. This is achieved by controlling the magnetic field of the device.

If there is a means of controlling the power source of the ion source, this will control the power source output and the desired beam current exiting the ion source. When the accelerating means for accelerating the ion beam is provided, the ion beam after exiting the analysis slit can be accelerated by this. When a means for controlling the power source of the acceleration means is provided, the power source output can be controlled by this means and the ion beam can be accelerated so as to obtain a desired energy.

Further, the beam intensity distribution correcting electromagnet lens device makes the beam intensity distribution uniform in one direction, and the ion source electrode is arranged so that the ion passage hole distribution is rough or absent in the central portion and is orthogonal to the one. If the lens device is formed so as to be dense at both ends in the direction, the nonuniformity of the beam intensity distribution caused by the ion beam aberration due to the passage of the electromagnet for mass analysis is made uniform in one direction, The density of the ion passage hole distribution in the source electrode makes the beam intensity distribution uniform in the direction perpendicular to the one direction.

[0015]

Embodiments of the present invention will be described below with reference to the drawings. 1 is a schematic perspective view of one embodiment, FIG. 2 is a plan view showing a part of the device of FIG. 1 in a partial horizontal section, and FIG. 3 is a part of the device of FIG. 1 in a vertical section. It is a side view. This ion implanter includes an ion source 1 having an extraction shape of 8 cm in length and 4 cm in width, a sector magnet 2 for mass analysis, an analysis slit 3, an ion beam accelerating tube 4, a hexapole magnet lens 51 for aberration correction, an ion beam. A pair of quadrupole magnet lenses 61, 62 for expanding the diameter and another hexapole magnet lens 52 for aberration correction are provided. Further, this ion implantation apparatus mainly includes a detection apparatus 7 for detecting an ion beam intensity distribution state at an ion implantation position P for injecting ions into a target object, a first controller 81 centered on a computer, and a computer. A second controller 82 is provided. A display 83 and a keyboard 84 for inputting various data are connected to the controller 82.

An object to be placed at the position P, for example, a semiconductor substrate, is placed at the position P at the time of ion implantation by the device 91 (see FIG. 2) for loading and unloading the substrate at the ion implantation position P, and at the time of beam adjustment. At the end of the ion implantation, the position P is retracted. The ion source 1 is supplied with power from a power source P1 whose voltage (or current) is variable. As shown in FIG. 4A, the electrode arranged in front of the plasma source of the ion source 1 has the ion passage hole 11 a of the electrode 11 in the horizontal direction X.
However, it is densely distributed over the height of about 2 cm at the upper and lower ends in the vertical direction (Y direction), and not at the central part.

A shutter device 10 capable of blocking the ion beam is attached to the ion source. Device 10
Includes a beam shutter 12 that opens and closes the beam emission port of the ion source, and a motor 14 that opens and closes the beam shutter through a transmission device 13. The sector magnet 2 has a yoke 2 around which an energizing coil 21 is wound, as shown in the cross section of FIG.
2 a pair of upper and lower pole pieces 23 (radius of curvature R = 50c
m) is fixed at an interval of 10 cm, and the ion beam passes between the pole pieces. As shown in FIG. 2, this magnet has a function of obliquely entering and exiting the pole piece in order to enable focusing and divergence of the ion beam in the horizontal direction (X direction) and the vertical direction (Y direction). Is added. In this example, the incident angle α is 7.8 degrees and the outgoing angle β is 30 degrees. This angle is necessary for the beam to focus at the analysis slit 3.
In addition, the cross section of the pole piece may have a finite radius of curvature (usually an infinite radius) in order to correct the aberration caused by the beam passing through this magnet. In this example, the radius of curvature r is
= 90 cm. The coil 21 is a variable current power source P.
Power is supplied from 2 (see FIG. 1).

The ion beam accelerating tube 4 is a power source P with a variable voltage.
Voltage is applied from 4. Quadrupole magnet lens 6
As shown in FIG. 6 as an example of its cross section, each of the Nos. 1 and 62 has four cores wound with coils arranged at equal angular intervals, and a current is passed through each coil.
The poles and the S poles are formed alternately. By controlling the magnitude of the current flowing in the coil, the magnetic field strength can be controlled and the beam shape (beam diameter) at the ion implantation position P can be changed. .. The coil of the lens 61 has a variable current source P61, and the coil of the lens 62 has a variable current source P.
Power is supplied from 62.

The magnet 61 focuses the ion beam in the horizontal direction X and diverges it in the vertical direction Y. Here, the magnetic field effective length is 20 cm and the inner diameter r6 = 10 c.
It is set to m. The magnet 62 diverges the ion beam in the horizontal direction X and focuses the ion beam in the vertical direction Y. Here, the magnetic field effective length is 20 cm and the inner diameter is r.
It is set to 6 = 10 cm. With these two lenses, the ion beam diameter can be expanded in a rectangular shape.

When the beam shape (beam diameter) becomes large,
Aberration caused by the ion beam passing through the sector magnet 2 causes distortion of the beam, resulting in non-uniform intensity distribution of the beam or deviation of the center of the beam from the center of the beam line. The hexapole magnet lens 5 arranged before and after the quadrupole magnet lens system 5
1, 52 are for solving this problem. By controlling the magnetic field intensities of these two hexapole magnet lenses, that is, the coil current, the beam intensity distribution at the ion implantation position P can be corrected to be uniform.

Each of the sextupole magnet lenses 51 and 52 has six cores, each having a coil wound around it, arranged at equal central angular intervals, as shown in the cross section of FIG. The magnetic field strength can be controlled by controlling the magnitude of the electric current flowing through the coil. Power can be supplied to the coil of the lens 51 from a power source P51 with a variable current, and power can be supplied to the coil of the lens 52 from a power source P52 with a variable current. The magnet lenses 51 and 52 are configured so that the beam distribution at the ion implantation position P can be made uniform in the horizontal direction (X direction). The magnet lenses 51 and 52 are set to have a magnetic field effective length of 10 cm and an inner diameter r5 of 20 cm, respectively.

The apparatus 7 for detecting the ion beam intensity distribution state comprises n (a plurality) Faraday cups 71 arranged in the horizontal direction X and the vertical direction Y, respectively, and supported by a support 72. 71 can detect the beam current that arrives at it and send it to the controller 81 via an amplifier (not shown). By knowing the beam current at each part of the ion implantation position with these two-dimensionally arranged cups, the beam intensity distribution and the expanded beam diameter size can be known. It should be noted that the cup 71 group is retracted from the implantation position P during ion implantation by the drive device 73 (see FIG. 1) of the support body 72, and during detection or measurement,
It is located at position P.

The controller 81 reads the signal from each Faraday cup 71, adds beam current data to the position data of each cup, and sends it to the controller 82. The controller 82 image-processes the beam current distribution based on the beam data sent from the controller 81, and displays it on the display 83. Also, based on the beam data, the currents of the power supplies P61 and P62 are controlled so that the beam diameter at the ion implantation position P becomes a predetermined size (area S), and the magnetic field strength of each magnet lens 61 and 62 is adjusted. .. Further, the dispersion of the beam intensity distribution is calculated, and the power supplies P51 and P52 are set so that the value is equal to or less than a predetermined value (σ) representing the uniformity of the desired beam intensity distribution.
Is controlled to adjust the magnetic field strength of each magnet lens 51, 52.

The controller 82 further sets the current of the beam emitted from the ion source 1 to a desired beam current value (I).
As described above, the power source P1 is controlled to control the current of the power source P2 so as to adjust the magnetic field strength of the sector magnet 2 so that the desired ion species can be selected, and the required ion beam energy (E ) Is obtained in the acceleration tube 4, the beam shutter 12 is extracted from the ion source 1 during ion implantation to allow beam passage, and the shutter 12 is inserted during beam adjustment to block the beam. 14, the Faraday cup 71 is arranged at the position P when the beam intensity distribution state is detected at the ion implantation position P, and the drive device 73 is controlled so as to retract the cup 71 from the position P when not detected. Sometimes, an object to be ion-implanted, for example, a semiconductor substrate is placed at position P, and when the beam is adjusted or the implantation is completed, The to move to a position P out controlling the substrate driving device 91.

Desired ion species, beam energy value (E), beam current value (I), size of substrate for ion implantation (in other words, required expanded beam diameter area S),
Uniformity value of desired beam distribution (σ, for example, σ = ± 10
%), Desired injection amount (φ), and other data can be input from the keyboard 84. The uniformity value σ is a predetermined horizontal direction X,
Value obtained by averaging the beam distribution at each position in the vertical direction Y
The ratio of standard deviation stdevIX, stdevIY to meanIX, meanIY, that is, stdevIX / meanIX, stdevIY / meanIY
Is.

With the apparatus of the embodiment described above, for example, on the surface of the semiconductor substrate 9 arranged at the ion implantation position P,
A case will be described in which PH ₃ is used as a source gas in the ion source and P ions are implanted. The substrate is 40 cm in this example
A square of × 40 cm was formed, and the edges were aligned in the horizontal direction X and the vertical direction Y. First, the cup 71 of the beam intensity distribution detector 7 is placed at the position P according to an instruction from the controller 82, and the desired ion species and data E, I, S, σ, and φ are input using the keyboard 84. Next, each power source is started in control operation according to an instruction from the controller 82 based on the input data. An ion beam close to parallel is extracted from the ion source 1. This ion beam is generated by the ion passage hole distribution of the electrode 11 shown in FIG.
As shown in FIG. 4 (B), a substantially uniform distribution is drawn in the X direction, and as shown in FIG. 4 (C), the upper and lower parts are large in the Y direction, and the central part is small or absent. Be withdrawn.

The ion beam emitted from the ion source 1 passes through a constant magnetic field in the sector magnet 2 for mass analysis, and a difference in momentum occurs depending on the ion species, and a different locus of motion is drawn, whereby ion implantation is performed. The desired ionic species required is selected, then unwanted ionic species are removed in the analysis slit 3 and the desired ionic species pass through.

The ion beam passing through the analysis slit 3 is accelerated by the acceleration tube 4 until a predetermined energy is obtained,
Enter the next lens system 51, 61, 62, 52. In this lens system, the ion beam diameter is shaped and the beam intensity distribution is corrected. That is, by passing through the pair of quadrupole magnet lenses 61 and 62, the ion beam diameter is expanded so as to spread in a rectangular shape. Further, the beam intensity distribution in the horizontal direction X on the substrate surface is made uniform by passing through the hexapole magnet lenses 51 and 52. Further, by adopting the ion passage hole distribution in the ion source electrode 11, the beam intensity distribution in the vertical direction Y of the substrate surface is made uniform. The shaped ion beam continues to move in the drift space to reach the position P.

At position P, each cup 71 of the device 7 detects the current of the beam incident on it. Controller 8
1 reads this detection signal through an amplifier, adds beam current data to the position data of each cup, and sends it to the controller 82. The controller 82 uses the power source P61 so that the beam diameter at the position P is expanded to a predetermined size (area S), that is, a size capable of covering the surface of the substrate 9, based on the beam data sent from the controller 81.
By controlling the current of P62, each magnet lens 61, 62
Adjust the magnetic field strength of. Further, the dispersion of the beam intensity distribution is calculated, and the currents of the power supplies P51 and P52 are controlled so as to be equal to or less than the uniformity value (σ).
The magnetic field strength of 1, 52 is adjusted.

Thus, when the beam diameter size and the beam distribution state at the position P are controlled to desired values, the cup 71 retracts from the position P based on the instruction of the controller 82, and the substrate 9 is moved to the position P instead. It is carried in and ion implantation is started. When the cup is retracted and the substrate is loaded, the ion source 1 is closed by the beam shutter 12 according to an instruction from the controller 82. The shutter is also closed when the substrate is carried out. Even during ion implantation, the controller 82 reads the data from the controller 81, determines whether the beam intensity distribution uniformity is σ or less, and adjusts the sextupole magnet lens power source as necessary.

Thus, the desired ion species can be used on the surface of the substrate to uniformly and satisfactorily ion-implant each part. Next, the operation of the controller 81 will be described with reference to the flowchart of FIG. 8, and the operation of the controller 82 will be described with reference to the flowcharts of FIGS. 9 and 10. It should be noted that each step in the flowchart is indicated by the letter "S" and the number following it.

As shown in FIG. 8, in the controller 81, when the program starts, the i-th cup in the X direction and the j-th cup in the Y direction are designated in order to determine which Faraday cup 71 to read the beam current. (S1), the beam current Iij detected by the cup
Is read (S2). Beam data is created by adding Iij to the cup position data (S3), and this data is transmitted to the controller 82. This operation is sequentially repeated for each cup 71.

As shown in FIGS. 9 and 10, in the controller 82, when the program starts, the ion species and data E, I, S
σ and φ are read (S5), a gas source (not shown) is selected according to the desired ion species, and this is connected to the ion source 1 (S6). Next, the output of the ion source power supply P1 is adjusted according to the beam current I (S7), and further the power supply P2 of the mass spectrometry sector magnet 2 is adjusted according to the ion species and ion extraction energy (S8). Next, the acceleration voltage of the acceleration tube power source P4 is adjusted according to the ion energy E (S9), and the power sources P61 and P62 of the quadrupole magnet lenses 61 and 62 are adjusted according to the substrate size (area S) (S10).

At the position P of the cup 71, the beam data is read from the controller 81 (S11), the beam intensity distribution range is calculated (S12), and it is determined whether the beam diameter size at the position P matches the area S ( S1
3) If "No", steps S10 to S12 are repeated. When the area S is satisfied, the power supplies P51 and P52 of the hexapole magnet lenses 51 and 52 are adjusted (S1).
4).

The beam data is read from the controller 81 (S15), and the uniformity of the beam intensity distribution is calculated (S15).
16), determine whether the uniformity is σ or less (S17),
In the case of "no", steps S14 to S16 are repeated, and?
In the following cases, insert the beam shutter 12 (S1
8), retract the cup 71 and position the substrate 9 at the position P.
It is carried in to (S19). After that, the shutter 12 is extracted (S20), and ion implantation is started (S21).

Implantation time counting is started by starting the ion implantation (S22), the beam data is read again from the controller 81 (S23), the beam intensity distribution uniformity is calculated (S24), and it is determined whether the uniformity is σ or less. A judgment is made (S25). The calculation in step S24 is performed as follows. Since the data of all the cups 71 cannot be read during the ion implantation, the data of a plurality of cups 71 in a place which is distributed a little wider than the substrate 9 and is not covered by the substrate 9 is read. At this time, instead of calculating the uniformity, it is compared with the cup data before the ion implantation to judge whether or not it is within a certain range.
The cup data F at the locations F ₁₁ , F _12, ... As shown in 1 are read, and the respective values are compared with the data before injection. In the comparison calculation, individual data may be compared, or an average of data at four corners may be calculated and compared with data before injection. If it exceeds a certain variation range, it is determined that the uniformity is abnormal, and a command signal for inserting the beam shutter is issued in step S30.

As a specific example, whether or not the uniformity is abnormal can be determined by whether or not the following Expression 1 or Expression 2 is satisfied. In Formula 1, B is an index before injection, P is an index during injection, and K ₁ is a value such as 10 ^-2 . In Expression 2, SF is F at a plurality of points in a corner.
Standard deviation, MF is the average value of F at multiple points in a corner, K ₂
Is a value such as 10 ^-2 . This comparison is performed at the four corners, and if there is any abnormality in one place, the injection is stopped.

[0038]

[Equation 1]

[0039]

[Equation 2]

In this way, when it is not below σ, the beam shutter 12 is inserted again (S30), the substrate 9 is retracted (S31), the cup 71 is placed at the position P, and the beam shutter 12 is pulled out (S32). ), After adjusting the power supplies P51 and P52 of the hexapole magnet lens (S3
3), the beam data is read from the controller 81 (S34), and the beam intensity distribution uniformity is calculated (S3).
5) It is determined whether or not the uniformity is σ or less (S35).

If not less than σ, steps S33 to S3
Repeat 5 When σ becomes less than or equal to σ, the beam shutter 12 is inserted (S37), the cup 71 is retracted to position the substrate 9 at the position P (S38), and the shutter 12 is pulled out (S).
39). After this step S39, or step S2
In step 5, if the uniformity is less than or equal to σ, it is judged whether or not the injection time has been reached (S26), and if not, step S
23, and if it has reached, the ion implantation is terminated (S
27), the shutter 12 is inserted (S28), and the substrate 9 is carried out (S29).

The injection time T is represented by T = qφS / I. q is the charge of the electron. Here, as a specific example,
Assuming that a conventional type ion source electrode in which the ion passage holes are evenly distributed over the entire electrode is adopted, the ion beam intensity distribution at the time of emission is ± 3 in the horizontal direction X as shown in FIG. 0.6%, ± 2.4 in the vertical direction Y
The case of using an ion source that can extract a% ion beam will be described.

In FIG. 12A, Xi represents the distance from the center of the beam emission port in the horizontal direction X, and IXi represents the number of beams at each position Xi. If meanIX is the average number of beams in the X direction and stdevIX is the standard deviation,
stdevIX / meanIX is the beam intensity distribution in the X direction ± 3.
It will be 6%. In FIG. 12B, Yi represents the distance from the center of the beam emission port in the vertical direction Y, and IYi represents the number of beams at each position Yi. If meanIY is the average number of beams in the Y direction and stdevIY is the standard deviation, stdevI
Y / meanIY becomes the beam intensity distribution in the Y direction of ± 2.4%.

In the above-described apparatus employing the ion source 1 capable of emitting such an ion beam, the intensity distribution of the ion beam extracted from the ion source 1 is due to the non-uniform distribution of the ion passage holes 11a in the electrode 11. ,
As shown in FIG. That is, about 4c in the X direction
Beams in the range of about 2 cm are vertically distributed in the m and Y directions.

Finally, the beam intensity distribution in the X direction at the ion implantation position P is ± 8.9% as shown in FIG. 14A, and the beam distribution in the Y direction is shown in FIG.
As shown in (B) of, the value was ± 8.7%, and in all cases, the desired value σ was ± 10% or less. According to the ion implantation apparatus described above, even if the substrate size, desired ion species, etc. are changed, the beam is automatically adjusted after the data is input, which is extremely convenient.

[0046]

According to the ion implantation apparatus of the present invention, it is not necessary to use a large-diameter ion source, and a compact ion source can be used to easily expand the ion beam diameter from the ion source to a desired size. Ions can be implanted in a wide area, and the distribution state can be adjusted so that the distribution state of the ion beam intensity is uniform over the entire large area, and a desired ion species can be selected from the ions extracted from the ion source, which is complicated. The desired ion species can be easily and uniformly ion-implanted without the need for beam adjustment, whereby a high-quality device can be manufactured.

[Brief description of drawings]

FIG. 1 is a schematic perspective view of an embodiment.

FIG. 2 is a plan view showing a part of the device of FIG. 1 in a horizontal section.

3 is a side view of the device of FIG. 1 in a vertical section.

4A is a front view of an ion source electrode, FIG. 4B is a diagram showing an ion beam distribution in the horizontal direction by the electrode, and FIG. 4C is a vertical direction by the electrode. It is a figure which shows the ion beam distribution of.

FIG. 5 is a schematic sectional view of a sector magnet.

FIG. 6 is a diagram showing a schematic example of a cross section of a quadrupole magnet lens.

FIG. 7 is a diagram showing a schematic example of a cross section of a hexapole magnet lens.

FIG. 8 is a flowchart showing an operation of the first controller.

FIG. 9 is a part of a flowchart showing the operation of the second controller.

FIG. 10 is the rest of the flowchart showing the operation of the second controller.

FIG. 11 is an explanatory diagram of beam intensity distribution uniformity calculation during ion implantation.

12A and 12B are diagrams showing horizontal and vertical intensity distribution states of an ion beam when emitted from a conventional electrode of an ion source. FIG. 12A shows a horizontal distribution and FIG. 12B shows a vertical distribution. Is shown.

13 is a diagram showing an ion beam intensity distribution state at the time of emission from the ion source in the embodiment of FIG.

14A and 14B are diagrams showing an ion beam intensity distribution state at an ion implantation position according to the embodiment of FIG. 1, wherein FIG. 14A shows a horizontal distribution and FIG. 14B shows a vertical distribution.

[Explanation of symbols]

 1 Ion Source 11 Ion Source Electrode 11a Ion Passage Hole 10 Shutter Device 12 Shutter P1 Ion Source Power Supply 2 Sector Magnet P2 Sector Magnet Power Supply 3 Analysis Slit 4 Acceleration Tube P4 Acceleration Tube Power Supply 51, 52 6-pole Magnet Lens P51, P52 6-fold Pole magnet lens power supply 61, 62 Quadrupole magnet lens P61, P62 Quadrupole magnet lens power supply 7 Beam distribution state detection device 71 Faraday cup 73 Cup drive device 81 First controller 82 Second controller 83 Display 84 Keyboard 9 Board 91 Board Loading / unloading device P Ion implantation position

Claims (5)

[Claims] 1. An ion source, an electromagnet for mass analysis for selecting a desired ion species from an ion beam emitted from the ion source, and unnecessary ions of ions leaving the electromagnet are removed to allow passage of the desired ion species. Analysis slit, electromagnet lens device for enlarging the diameter of the ion beam that has passed through the analysis slit, correction electromagnet lens device for correcting the ion beam intensity distribution at the ion implantation position on the object to be uniform, and ions at the ion implantation position Means for detecting a beam intensity distribution state, means for controlling the magnetic field of the mass analysis electromagnet so that a desired ion species can be selected,
The magnetic field of the electromagnet lens in the ion beam diameter enlarging electromagnet lens device is controlled so as to obtain the desired ion beam expansion diameter based on the desired ion beam expansion diameter at the implantation position and the data from the beam intensity distribution state detecting means. Means for controlling the magnetic field of the electromagnet lens in the correction electromagnet lens device so as to obtain the desired ion beam intensity distribution at the implantation position and the data from the beam intensity distribution state detecting means. An ion implantation apparatus comprising means. 2. The ion implantation apparatus according to claim 1, further comprising an acceleration means for accelerating the ion beam after passing through the analysis slit. 3. The ion implantation apparatus according to claim 2, further comprising means for controlling the power source of the ion source and means for controlling the power source of the acceleration means. 4. The correction electromagnet lens device uniformizes the ion beam intensity distribution at the implantation position in one direction, and the electrode of the ion source is configured to make the ion passage hole distribution coarse or absent in the central portion. ., Are formed so as to be dense at both ends in a direction perpendicular to the one direction.
The ion implanter according to 2 or 3. 5. The ion implanter according to claim 1, wherein a shutter device capable of blocking an ion beam is provided at a beam exit of the ion source.