JPH05160659A - Production of piezoelectric oscillating element - Google Patents

Production of piezoelectric oscillating element

Info

Publication number
JPH05160659A
JPH05160659A JP31826491A JP31826491A JPH05160659A JP H05160659 A JPH05160659 A JP H05160659A JP 31826491 A JP31826491 A JP 31826491A JP 31826491 A JP31826491 A JP 31826491A JP H05160659 A JPH05160659 A JP H05160659A
Authority
JP
Japan
Prior art keywords
piezoelectric substrate
vibrating element
piezoelectric
drive electrode
driving electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP31826491A
Other languages
Japanese (ja)
Inventor
Masaki Yanai
雅紀 谷内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP31826491A priority Critical patent/JPH05160659A/en
Publication of JPH05160659A publication Critical patent/JPH05160659A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To improve the performance with respect to the production of an energy two-dimensional confinement type perpendicular slip oscillating element. CONSTITUTION:Driving electrodes 3, 4 are formed on the central part of a piezoelectric substrate 2, and a part 13 of the piezoelectric substrate 2 on the side of driving electrodes 3, 4 is made amorphous. This constitution is characterized by forming driving electrodes 3, 4 on the central part of the piezoelectric substrate 2 and giving a part 13 of the piezoelectric substrate 2, which is placed on the side of driving electrodes 3, 4, with the processing strain remaining treatment. The piezoelectric substrate 2 is so cut out that chippings 14 are formed in the peripheral edge part, and driving electrodes 3, 4 are formed on the central part of the piezoelectric substrate 2. Many chippings 14 are formed in the outer edge part of the piezoelectric substrate 2 whose central part has the driving electrodes 3 and 4 formed thereon.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はエネルギ2次元閉じ込め
型厚みすべり振動素子の製造方法、特に、電圧制御発振
器に使用したときの発振周波数特性を改善する製造方法
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an energy two-dimensional confinement type thickness shear vibration element, and more particularly to a method for improving the oscillation frequency characteristic when used in a voltage controlled oscillator.

【0002】[0002]

【従来の技術】従来、エネルギ2次元閉じ込め型厚みす
べり振動素子(以下,振動素子と略記する)は、タンタ
ル酸リチウムまたはニオブ酸リチウムの単結晶より、例
えば正方形または円形の圧電基板を切出し、圧電基板の
中心部の駆動電極および駆動電極から延在するリードを
形成してなる。
2. Description of the Related Art Conventionally, an energy two-dimensional confinement type thickness-shear vibrating element (hereinafter abbreviated as vibrating element) is formed by cutting out a piezoelectric substrate having a square or circular shape from a single crystal of lithium tantalate or lithium niobate. A drive electrode at the center of the substrate and a lead extending from the drive electrode are formed.

【0003】図7は従来の振動素子を示す平面図(イ) と
その側面図(ロ) であり、振動素子1の圧電基板2は、タ
ンタル酸リチウムまたはニオブ酸リチウムの単結晶より
切り出したものであり、基板2の表面には、その中心部
に位置する駆動電極3と、電極3より右方向に延在する
リード5をパターン形成し、基板2の裏面には、駆動電
極3に対向する駆動電極4と、電極より左方向に延在す
るリード6をパターン形成してなる。
FIG. 7 is a plan view (a) and a side view (b) showing a conventional vibrating element. The piezoelectric substrate 2 of the vibrating element 1 is cut out from a single crystal of lithium tantalate or lithium niobate. The drive electrode 3 located at the center of the substrate 2 and the lead 5 extending rightward from the electrode 3 are pattern-formed on the front surface of the substrate 2, and the drive electrode 3 is opposed to the back surface of the substrate 2. The drive electrode 4 and the lead 6 extending leftward from the electrode are patterned.

【0004】かかる振動素子は、例えばパッケージ基板
に端子電極を形成し、その端子電極と前記リードの外端
部とを導電性接着剤等により接続する。
In such a vibrating element, for example, a terminal electrode is formed on a package substrate, and the terminal electrode and the outer end portion of the lead are connected by a conductive adhesive or the like.

【0005】[0005]

【発明が解決しようとする課題】図8は従来方法で製造
した振動素子のアドミッタンス特性、図9は従来方法で
製造した振動素子の制御電圧と発振周波数との関係を示
す図である。
FIG. 8 is a diagram showing the admittance characteristic of the resonator element manufactured by the conventional method, and FIG. 9 is a diagram showing the relationship between the control voltage and the oscillation frequency of the resonator element manufactured by the conventional method.

【0006】図8において、縦軸は減衰量,横軸は周波
数であり、発振範囲が18.125MHz±0.2MHzである振動
素子のアドミッタンス特性Aには、外郭振動の高調波に
より多数のスプリアスsが発生し、特に、発振範囲(17.
925MHz〜18.325MHz)内のスプリアスsが有害となる。
In FIG. 8, the vertical axis is the attenuation amount, the horizontal axis is the frequency, and the admittance characteristic A of the vibrating element having an oscillation range of 18.125 MHz ± 0.2 MHz has many spurious s due to the harmonics of the external vibration. Occurs, especially in the oscillation range (17.
Spurious s within 925MHz to 18.325MHz is harmful.

【0007】図9において、縦軸は発振周波数,横軸は
制御電圧であり、図8に示す如く発振範囲内にスプリア
スsのある振動素子を、例えば電圧制御発振器として使
用すると、発振周波数と制御電圧の相関特性Bには、制
御電圧-1.8Vの位置にジャンプjが発生し、線形性の悪
いものとなってしまう。
In FIG. 9, the ordinate represents the oscillation frequency and the abscissa represents the control voltage. When an oscillating element having spurious s within the oscillation range as shown in FIG. 8 is used as, for example, a voltage controlled oscillator, the oscillation frequency and the control are controlled. In the voltage correlation characteristic B, a jump j occurs at the position of the control voltage -1.8V, resulting in poor linearity.

【0008】なお、スプリアスsをなくす従来技術とし
て、吸音材(樹脂)を圧電基板2に塗布する方法もあ
る。しかし、かかる従来方法は、圧電基板2に滴下した
吸音材が硬化前および硬化中に広がるため、塗布領域お
よび塗布量のコントロールが困難であり、吸音材の一部
が駆動電極に被さると共振抵抗が急激に悪くなり、使用
できなくなるという欠点がある。
As a conventional technique for eliminating spurious s, there is a method of applying a sound absorbing material (resin) to the piezoelectric substrate 2. However, in such a conventional method, since the sound absorbing material dropped on the piezoelectric substrate 2 spreads before and during the curing, it is difficult to control the application area and the application amount, and when a part of the sound absorbing material covers the drive electrode, the resonance resistance is reduced. Has the drawback that it suddenly deteriorates and becomes unusable.

【0009】[0009]

【課題を解決するための手段】図1は本発明方法の概念
図である。図1(イ) において振動素子11は、圧電基板2
をタンタル酸リチウムまたはニオブ酸リチウムの単結晶
より切り出し、圧電基板2の表面と裏面には駆動電極
3,4およびリード5,6をパターン形成し、圧電基板
2の表面と裏面との少なくとも一方には、駆動電極3ま
たは4より離れた一部(上側方部分および下側方部分)
13を、レーザ光照射等によってアモルファス化させた
り、ラッピング加工する等によって内部ひずみが残留す
るようにする。
FIG. 1 is a conceptual diagram of the method of the present invention. In FIG. 1A, the vibration element 11 is the piezoelectric substrate 2
Are cut out from a single crystal of lithium tantalate or lithium niobate, and drive electrodes 3, 4 and leads 5, 6 are patterned on the front surface and the back surface of the piezoelectric substrate 2, and at least one of the front surface and the back surface of the piezoelectric substrate 2 is formed. Is a part apart from the drive electrodes 3 or 4 (upper side part and lower side part)
13 is made amorphous by laser light irradiation or the like, and internal strain is left by lapping.

【0010】図1(ロ) において振動素子12は、タンタル
酸リチウムまたはニオブ酸リチウムの単結晶より切り出
し中心部に駆動電極3,4を形成した圧電基板(2,8) の
外縁部には、多数のチッピング(ぎざぎざ)14を形成せ
しめる。
In FIG. 1B, the vibration element 12 is cut out from a single crystal of lithium tantalate or lithium niobate, and the drive electrodes 3 and 4 are formed in the central portion of the piezoelectric substrate (2, 8). A large number of chippings 14 are formed.

【0011】[0011]

【作用】上記手段によれば、圧電基板の前記アモルファ
ス化,内部ひずみ残留処理またはチッピングを形成させ
ることにより、スプリアスの原因となる輪郭振動を減衰
し乱反射させるようになり、不要波の高調波によるスプ
リアスが抑制され、圧電振動子の特性が改善される。
According to the above means, the amorphization of the piezoelectric substrate, the internal strain residual treatment, or the chipping is formed so that the contour vibration that causes the spurious is attenuated and diffusely reflected. Spurious is suppressed and the characteristics of the piezoelectric vibrator are improved.

【0012】[0012]

【実施例】図2は本発明の第1の実施例による振動素子
の主要製造工程の説明図、図3は図2に示す方法で製造
した振動素子のアドミッタンス特性図、図4は図2に示
す方法で製造した振動素子を電圧制御発振器として使用
したときの制御電圧と発振周波数との関係を示す図、図
5は本発明の第2の実施例による振動素子の主要製造工
程の説明図、図6は本発明の第3の実施例による振動素
子の主要製造工程の説明図である。
FIG. 2 is an explanatory view of the main manufacturing steps of a vibration element according to the first embodiment of the present invention, FIG. 3 is an admittance characteristic diagram of the vibration element manufactured by the method shown in FIG. 2, and FIG. FIG. 5 is a diagram showing a relationship between a control voltage and an oscillation frequency when a vibrating element manufactured by the method shown is used as a voltage controlled oscillator, FIG. 5 is an explanatory view of main manufacturing steps of the vibrating element according to the second embodiment of the present invention, FIG. 6 is an explanatory view of main manufacturing steps of the vibration element according to the third embodiment of the present invention.

【0013】図2(イ) において、タンタル酸リチウムま
たはニオブ酸リチウムの単結晶より圧電基板(量産的に
はウエーハ)2を切り出したのち、図2(ロ) に示す如
く、圧電基板2の表面と裏面とに電極形成膜7を被着さ
せる。
In FIG. 2 (a), a piezoelectric substrate (wafer in mass production) 2 is cut out from a single crystal of lithium tantalate or lithium niobate, and then the surface of the piezoelectric substrate 2 as shown in FIG. 2 (b). The electrode forming film 7 is applied to the back surface and the back surface.

【0014】次いで、電極形成膜7の不要部を除去して
図2(ハ) に示す如く、駆動電極3,4およびリード5,
6(量産的には1枚のウエーハに多数の電極とリード)
をパターン形成したのち、駆動電極3または駆動電極4
あるいは駆動電極3と4の上,下側方部分(アモルファ
ス化領域) 13には図2(ニ) に示す如く、多数のアモルフ
ァス化スポット15、例えばレーザ光 (熱線) スポットを
数十回程度照射してなるアモルファス化スポット15を、
量産的には分割前のウエーハの各アモルファス化領域13
にアモルファス化スポット15を形成し、振動素子1-1
完成する。
Then, unnecessary portions of the electrode forming film 7 are removed and, as shown in FIG. 2C, the drive electrodes 3, 4 and the leads 5,
6 (Many electrodes and leads on one wafer for mass production)
After forming the pattern, the drive electrode 3 or the drive electrode 4
Alternatively, as shown in FIG. 2D, the upper and lower side portions (amorphization regions) 13 of the drive electrodes 3 and 4 are irradiated with a large number of amorphization spots 15, for example, laser light (heat ray) spots about tens of times. Amorphized spot 15 formed by
In terms of mass production, each amorphized region of the wafer before division 13
An amorphized spot 15 is formed on the surface, and the vibration element 1-1 is completed.

【0015】このようなアモルファス化処理を施した振
動素子1-1のアドミッタンス特性A -1は、縦軸を減衰量
とし、横軸を周波数とした図3に示す如き曲線となり、
図中に破線で示す如くアモルファス化処理前に発生した
スプリアスsが解消する。
A shaker which has been subjected to such an amorphization treatment
Moving element 1-1Admittance characteristics A -1Is the amount of attenuation on the vertical axis
And the horizontal axis is the frequency, and the curve is as shown in Fig. 3,
It occurred before the amorphization process as shown by the broken line in the figure.
Spurious s disappears.

【0016】さらに、振動素子1-1を電圧制御発振器と
して使用したとき、発振周波数と制御電圧との相関特性
-1は、縦軸を発振周波数,横軸を制御電圧とした図4
に示す如くなり、アモルファス化処理前に発生したジャ
ンプj(図9参照)が消滅し線形性(直線性)が改善さ
れる。
Further, when the vibrating element 1 -1 is used as a voltage controlled oscillator, the correlation characteristic B -1 between the oscillation frequency and the control voltage is shown in FIG. 4 with the ordinate indicating the oscillation frequency and the abscissa indicating the control voltage.
The jump j (see FIG. 9) generated before the amorphization process disappears and the linearity (linearity) is improved.

【0017】図5(イ) において、タンタル酸リチウムま
たはニオブ酸リチウムの単結晶より圧電基板(量産的に
はウエーハ)2を切り出したのち、図5(ロ) に示す如
く、圧電基板2の表面と裏面とに電極形成膜7を被着さ
せる。
In FIG. 5A, a piezoelectric substrate (wafer in mass production) 2 is cut out from a single crystal of lithium tantalate or lithium niobate, and then the surface of the piezoelectric substrate 2 is cut as shown in FIG. 5B. The electrode forming film 7 is applied to the back surface and the back surface.

【0018】次いで、電極形成膜7の不要部を除去して
図5(ハ) に示す如く、駆動電極3,4およびリード5,
6(量産的には1枚のウエーハに多数の電極とリード)
をパターン形成したのち、駆動電極3または駆動電極4
あるいは駆動電極3と4の上,下側方部分(加工ひずみ
残留領域)13には図5(ニ) に示す如く、加工ひずみ残留
処理、例えばラッピングまたは研磨紙や金属カッターに
よって多数の微細疵16を付け、振動素子1-2が完成す
る。
Then, the unnecessary portions of the electrode forming film 7 are removed and, as shown in FIG. 5C, the drive electrodes 3, 4 and the leads 5,
6 (Many electrodes and leads on one wafer for mass production)
After forming the pattern, the drive electrode 3 or the drive electrode 4
Alternatively, as shown in FIG. 5D, in the upper and lower side portions (working strain residual area) 13 of the drive electrodes 3 and 4, a large number of fine scratches 16 are formed by a processing strain residual treatment, for example, lapping or polishing paper or a metal cutter. Paste, vibrating element 1 -2 completed.

【0019】このような微細疵16を付けることによっ
て、加工ひずみが残留する振動素子1 -2のアドミッタン
ス特性は、アモルファス化処理を施した振動素子1-1
それ(図3)と同様に、加工ひずみ残留処理前のスプリ
アスが解消すると共に、振動素子1-2を電圧制御発振器
として使用したとき、発振周波数と制御電圧との相関特
性も、アモルファス化処理を施した振動素子1-1のそれ
(図4)と同様に、ジャンプj(図9参照)が消滅し線
形性が改善される。
By attaching such fine flaws 16
Resonance element 1 with residual processing strain -2Admittant
The vibration characteristic is that the vibrating element 1 that has been amorphized-1of
Similar to that (Fig. 3), sprinkles before processing strain residual treatment
Asbestos is eliminated and the vibration element 1-2Voltage controlled oscillator
When used as, the correlation characteristics between oscillation frequency and control voltage
The vibrating element 1 that has undergone amorphization treatment-1That of
Similar to (Fig. 4), jump j (see Fig. 9) disappears and the line
Shape is improved.

【0020】図6(イ) において、タンタル酸リチウムま
たはニオブ酸リチウムの単結晶よりウエーハ(圧電基
板)8を切り出したのち、ウエーハ8の表面と裏面とに
電極形成膜(7) を被着し、図6(ロ) に示す如く、その電
極形成膜の不要部を除去して多数の駆動電極3 (と図示
しない4)およびリード5 (と図示しない6)をパターン形
成する。
In FIG. 6 (a), a wafer (piezoelectric substrate) 8 is cut out from a single crystal of lithium tantalate or lithium niobate, and an electrode forming film (7) is adhered to the front and back surfaces of the wafer 8. As shown in FIG. 6B, unnecessary portions of the electrode formation film are removed and a large number of drive electrodes 3 (and 4 not shown) and leads 5 (and 6 not shown) are patterned.

【0021】しかるのち、図6(ハ) に示す一点鎖線9に
沿ってウエーハ8を、従来方法より低速回転または早送
りしてダイシング (切断)すると、図1(ロ) に示す如
く、圧電基板2の周縁部に多数のチッピング(ぎざぎ
ざ)14を有する振動素子12が完成する。
Thereafter, when the wafer 8 is diced (cut) along the alternate long and short dash line 9 shown in FIG. 6C by rotating at a slower speed or faster than the conventional method, as shown in FIG. A vibrating element 12 having a large number of chippings 14 on the peripheral edge thereof is completed.

【0022】このようなチッピング処理を施した振動素
子12のアドミッタンス特性は、アモルファス化処理を施
した振動素子1-1のそれ(図3)と同様に、正しい直線
(または曲線) に切断した生じるスプリアスが解消する
と共に、振動素子12を電圧制御発振器として使用したと
き、発振周波数と制御電圧との相関特性も、アモルファ
ス化処理を施した振動素子1-1のそれ(図4)と同様
に、ジャンプj(図9参照)が消滅し線形性が改善され
る。
[0022] Similar to the admittance characteristics of the vibrating element 12 subjected to such chipping process, that of the vibrating elements 1 -1 subjected to amorphization process (FIG. 3), the correct linear
The spurious generated by cutting into (or the curve) is eliminated, and when the vibrating element 12 is used as a voltage controlled oscillator, the correlation characteristic between the oscillation frequency and the control voltage is also that of the vibrating element 1 -1 which has been subjected to the amorphization process. Similar to (FIG. 4), the jump j (see FIG. 9) disappears and the linearity is improved.

【0023】[0023]

【発明の効果】以上説明したように本発明方法によれ
ば、アドミッタンス特性におけるスプリアスが解消し、
発振器として使用したとき温度,負荷容量等に対する安
定性が向上し、電圧制御発振器として使用したとき、発
振周波数と制御電圧との相関特性の線形性が改善された
効果がある。
As described above, according to the method of the present invention, spurious in the admittance characteristic is eliminated,
When used as an oscillator, the stability with respect to temperature, load capacitance, etc. is improved, and when used as a voltage controlled oscillator, the linearity of the correlation characteristic between the oscillation frequency and the control voltage is improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明方法の概念図である。FIG. 1 is a conceptual diagram of the method of the present invention.

【図2】 本発明の第1の実施例による振動素子の主要
製造工程の説明図である。
FIG. 2 is an explanatory diagram of main manufacturing steps of the resonator element according to the first embodiment of the present invention.

【図3】 図2に示す方法で製造した振動素子のアドミ
ッタンス特性図である。
3 is an admittance characteristic diagram of the resonator element manufactured by the method shown in FIG.

【図4】 図2に示す方法で製造した振動素子を使用し
た電圧制御発振器における制御電圧と発振周波数との相
関図である。
FIG. 4 is a correlation diagram between a control voltage and an oscillation frequency in a voltage controlled oscillator using the vibration element manufactured by the method shown in FIG.

【図5】 本発明の第2の実施例による振動素子の主要
製造工程の説明図である。
FIG. 5 is an explanatory diagram of main manufacturing steps of the resonator element according to the second embodiment of the present invention.

【図6】 本発明の第3の実施例による振動素子の主要
製造工程の説明図である。
FIG. 6 is an explanatory diagram of main manufacturing steps of the resonator element according to the third embodiment of the present invention.

【図7】 従来の振動素子の説明図である。FIG. 7 is an explanatory diagram of a conventional vibrating element.

【図8】 従来方法で製造した振動素子のアドミッタン
ス特性図である。
FIG. 8 is an admittance characteristic diagram of the resonator element manufactured by the conventional method.

【図9】 従来方法で製造した振動素子を使用した電圧
制御発振器における制御電圧と発振周波数との相関図で
ある。
FIG. 9 is a correlation diagram between a control voltage and an oscillation frequency in a voltage controlled oscillator using a vibration element manufactured by a conventional method.

【符号の説明】[Explanation of symbols]

2は圧電基板(ウエーハ) 3,4は駆動電極 5,6は駆動電極より延在するリード 8はウエーハ(圧電基板) 11, 11-1, 11-2, 12は振動素子 13はアモルファス化処理または加工ひずみ残留処理領域 14はチッピング2 is a piezoelectric substrate (wafer) 3, 4 is a drive electrode 5, 6 is a lead extending from the drive electrode 8 is a wafer (piezoelectric substrate) 11, 11 -1, 11 -2 , 12 is an oscillating element 13 is amorphized Or processing strain residual processing area 14 is chipped

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 エネルギ2次元閉じ込め型厚みすべり振
動素子であって、タンタル酸リチウムまたはニオブ酸リ
チウムの単結晶より切り出した圧電基板(2)の中心部に
駆動電極(3,4) を形成し、該駆動電極(3,4) の側方に位
置する該圧電基板(2) の一部(13)をアモルファス化させ
ることを特徴とする圧電振動素子の製造方法。
1. A two-dimensional energy confinement type thickness-shear vibrating element, in which a drive electrode (3, 4) is formed at the center of a piezoelectric substrate (2) cut from a single crystal of lithium tantalate or lithium niobate. A method for manufacturing a piezoelectric vibrating element, characterized in that a part (13) of the piezoelectric substrate (2) located on the side of the drive electrode (3, 4) is made amorphous.
【請求項2】 請求項1記載のアモルファス化がレーザ
光照射であることを特徴とする請求項1記載の圧電振動
素子の製造方法。
2. The method for manufacturing a piezoelectric vibrating element according to claim 1, wherein the amorphization according to claim 1 is laser light irradiation.
【請求項3】 エネルギ2次元閉じ込め型厚みすべり振
動素子であって、タンタル酸リチウムまたはニオブ酸リ
チウムの単結晶より切り出した圧電基板(2)の中心部に
駆動電極(3,4) を形成し、該駆動電極(3,4) の側方に位
置する該圧電基板(2) の一部(13)に内部ひずみ残留処理
を施すことを特徴とする圧電振動素子の製造方法。
3. A two-dimensional energy confinement type thickness-shear vibration element, in which a drive electrode (3, 4) is formed at the center of a piezoelectric substrate (2) cut out from a single crystal of lithium tantalate or lithium niobate. A method for manufacturing a piezoelectric vibrating element, characterized in that a part (13) of the piezoelectric substrate (2) located on the side of the drive electrode (3, 4) is subjected to internal strain residual treatment.
【請求項4】 請求項3記載の加工ひずみ残留処理がラ
ッピング処理であることを特徴とする請求項3記載の圧
電振動素子の製造方法。
4. The method for manufacturing a piezoelectric vibration element according to claim 3, wherein the processing strain residual treatment according to claim 3 is a lapping treatment.
【請求項5】 エネルギ2次元閉じ込め型厚みすべり振
動素子であって、タンタル酸リチウムまたはニオブ酸リ
チウムの単結晶より切り出し中心部に駆動電極(3,4) が
形成された圧電基板(2,8) の外縁部に、多数のチッピン
グ(14)を形成せしめることを特徴とする圧電振動素子の
製造方法。
5. A two-dimensional energy confinement type thickness-shear vibrating element, which is a piezoelectric substrate (2,8) having a drive electrode (3,4) formed at the center thereof, which is cut out from a single crystal of lithium tantalate or lithium niobate. A method for manufacturing a piezoelectric vibrating element, characterized in that a large number of chippings (14) are formed on the outer edge of
JP31826491A 1991-12-03 1991-12-03 Production of piezoelectric oscillating element Withdrawn JPH05160659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31826491A JPH05160659A (en) 1991-12-03 1991-12-03 Production of piezoelectric oscillating element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31826491A JPH05160659A (en) 1991-12-03 1991-12-03 Production of piezoelectric oscillating element

Publications (1)

Publication Number Publication Date
JPH05160659A true JPH05160659A (en) 1993-06-25

Family

ID=18097262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31826491A Withdrawn JPH05160659A (en) 1991-12-03 1991-12-03 Production of piezoelectric oscillating element

Country Status (1)

Country Link
JP (1) JPH05160659A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243933B1 (en) * 1996-04-16 2001-06-12 Matsushita Electric Industrial Co., Ltd. Piezoelectric resonator and method for fabricating the same
JP2005318312A (en) * 2004-03-31 2005-11-10 Kyocera Kinseki Corp Method for manufacturing crystal oscillator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243933B1 (en) * 1996-04-16 2001-06-12 Matsushita Electric Industrial Co., Ltd. Piezoelectric resonator and method for fabricating the same
JP2005318312A (en) * 2004-03-31 2005-11-10 Kyocera Kinseki Corp Method for manufacturing crystal oscillator

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