JPH05144384A - Material for shadow mask - Google Patents

Material for shadow mask

Info

Publication number
JPH05144384A
JPH05144384A JP33306291A JP33306291A JPH05144384A JP H05144384 A JPH05144384 A JP H05144384A JP 33306291 A JP33306291 A JP 33306291A JP 33306291 A JP33306291 A JP 33306291A JP H05144384 A JPH05144384 A JP H05144384A
Authority
JP
Japan
Prior art keywords
shadow mask
crystal grains
thermal expansion
less
iron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33306291A
Other languages
Japanese (ja)
Inventor
Emiko Higashinakagaha
恵美子 東中川
Michihiko Inaba
道彦 稲葉
Yasuhisa Otake
康久 大竹
Fumio Mori
二美男 盛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of JPH05144384A publication Critical patent/JPH05144384A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a fine-grained material for a shadow mask by which a color difference is hardly caused and which is suitable for realizing a color television to display a distinct image. CONSTITUTION:A raw material for a shadow mask is mainly composed of nickel and iron, and dislocation density of crystal grains at least in a surface layer exceeds 10<11>(d) 1/cm<2>. Or the raw material contains the nickel by 25-50% in weight %, and contains further cobalt by 2-10% if necessary, and the residual part is composed substantially of iron. It is low thermal expansion alloy having a coefficient of thermal expansion equal to or smaller than the 7X10<-6>/ deg.C, and the crystal grains are also equal to or larger than the grain size number (according to JISG551) 13. This material for the shadow mask can be manufactured easily by cooling/transforming a melted body (molten metal) of the low thermal expansion alloy rapidly into a thin plate by means of a twin roller method.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、たとえばカラーテレビ
のシャドウマスク構成に適するシャドウマスク用素材に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shadow mask material suitable for a shadow mask construction of a color television, for example.

【0002】[0002]

【従来の技術】一般にカラーテレビのシャドウマスク
は、エッチング性および成形性がよく、かつ電子ビーム
の反射軽減にきよする酸化膜を表面に形成し易いリムド
鋼やAlキルド鋼などで構成していた。しかしながら、各
種のニューメディアに対応すべく、カラーブラウン管に
ついての高品質化、換言すると表示画像の見易さやきめ
細かさ要求に対して、前記リムド鋼やAlキルド鋼で構成
したシャドウマスクでは次のような不都合がある。すな
わち、カラーブラウン管の動作時には、前記シャドウマ
スクの温度が30〜100 ℃に上昇して熱膨脹を起こすた
め、シャドウマスクの成形形状の歪みに起因したいわゆ
るドーミングが生じる。その結果、シャドウマスクと蛍
光面との間の相対位置関係にズレが生じ、ビュリテイー
ドリフト(PD)と称される色ズレが発生する。特に高品
位カラーブラウン管の場合は、シャドウマスクの電子ビ
ーム通過孔の径およびそのピッチが非常に小さいので、
前記電子ビーム通過孔の相対的ズレ量の割合が大きくな
るという問題がある。
2. Description of the Related Art Generally, a shadow mask for a color television is made of rimmed steel or Al-killed steel which has a good etching property and a good formability and which easily forms an oxide film on the surface to reduce the reflection of an electron beam. .. However, in order to support various new media, in order to improve the quality of color cathode-ray tubes, in other words, for the viewability and fineness of the displayed image, the shadow mask made of the rimmed steel or Al-killed steel is as follows. There is a disadvantage. That is, when the color cathode ray tube operates, the temperature of the shadow mask rises to 30 to 100 ° C. to cause thermal expansion, so that so-called doming occurs due to distortion of the shape of the shadow mask. As a result, the relative positional relationship between the shadow mask and the fluorescent screen is deviated, and a color misregistration referred to as beauty drift (PD) occurs. Especially in the case of high-quality color cathode ray tubes, the diameter and pitch of the electron beam passage holes of the shadow mask are very small,
There is a problem that the ratio of the relative deviation amount of the electron beam passage hole increases.

【0003】こうした問題に対応して、カラーテレビ、
特に大型で画質が高精細なカラーテレビのシャドウマス
クの構成に、たとえば36重量%ニッケル−鉄(36%Ni-F
e) を中心としたアンバー合金の使用が試みられてい
る。すなわち、前記アンバー合金は熱膨脹係数が小さい
ため、シャドウマスクとしての使用において、電子の衝
突によりシャドウマスクが昇温しても、電子線通過孔の
位置ズレを起し難いので、結果的に色ズレの防止を図り
易いからである。なお、前記アンバー合金系のシャドウ
マスク用素材は、原料素材の溶解、熱間鍛造、熱間圧
延、焼鈍、調整圧延の工程を経て製造されており、この
ようにして得られたアンバー合金の調整圧延の場合は、
結晶粒が微細といっても 6μm 以上(JIS G0551 で規定
された粒度番号では12以下)である。
In response to these problems, color televisions,
For example, 36% by weight nickel-iron (36% Ni-F)
Attempts have been made to use amber alloys centered on e). That is, since the amber alloy has a small coefficient of thermal expansion, when used as a shadow mask, even if the shadow mask is heated by the collision of electrons, it is difficult for the electron beam passage hole to be displaced, resulting in a color shift. This is because it is easy to prevent The material for the shadow mask of the amber alloy type is manufactured through the steps of melting the raw material material, hot forging, hot rolling, annealing, and adjusting rolling, and adjusting the amber alloy thus obtained. For rolling,
Even if it is said that the crystal grains are fine, it is 6 μm or more (12 or less in the grain size number specified in JIS G0551).

【0004】[0004]

【発明が解決しようとする課題】しかしながら、大型で
画質が高精細なカラーテレビの開発・実用化に伴い、シ
ャドウマスクについても高精度に、精細ないし微細な電
子線通過孔の形設(開孔)が要求されつつある。つま
り、シャドウマスク用素材について、熱膨脹係数が小さ
いこととともに、高精度に所要の微細な電子線通過孔の
形設可能なことが望まれることになるが、前記従来のア
ンバー合金では結晶粒が微細といっても 6μm 以上で、
エッチング速度について見ると、前記リムド鋼やAlキル
ド鋼の場合に比べてエッチング速度が 1/3程度と低く、
生産性が劣るという問題があって、なお満足し得るもの
とはいえない。換言すると、結晶粒が微細である程、フ
ォトエッチングで平滑性の良好な内壁面を有する微細な
開孔を形設し得るのに対し、微細といっても結晶粒が 6
μm 以上の従来のアンバー合金では十分とはいい難い。
However, with the development and practical use of a large-sized and high-definition color TV, the shadow mask is also formed with high precision and fine electron beam passage holes (open holes). ) Is being demanded. In other words, it is desirable for the shadow mask material to have a small coefficient of thermal expansion and to be capable of forming required fine electron beam passage holes with high precision. However, in the conventional Amber alloy, the crystal grains are fine. Even if it is 6 μm or more,
Looking at the etching rate, the etching rate is about 1/3 lower than that of the above-mentioned rimmed steel or Al killed steel,
There is a problem of poor productivity, which is still not satisfactory. In other words, the finer the crystal grains are, the finer the openings having the inner wall surface with good smoothness can be formed by photoetching.
It is hard to say that the conventional amber alloy with a size of μm or more is sufficient.

【0005】一方、前記エッチング性を改善したシャド
ウマスク用素材として、ニッケル(Ni)および鉄(Fe)を主
成分とし、かつ結晶粒内の転位密度が1011dl/cm2 以下
と選択・設定した素材も知られている。つまり、所要の
原料素材を溶解し、熱間圧延、焼鈍、調整圧延の工程を
経て製造する工程において、焼鈍時の温度や時間,冷却
速度などをてきぎ選択・組み合わせて結晶粒内の転位密
度を1011dl/cm2 以下に制御した Ni-Fe系金属でシャド
ウマスクを構成することも知られている。しかし、この
結晶粒内の転位密度を1011dl/cm2 以下に制御した Ni-
Fe系金属の場合、エッチング性が改善されているとはい
え、エッチング速度が十分高いとはいい難く、生産性が
劣るという問題が依然残っている。
On the other hand, as a material for a shadow mask with improved etching properties, nickel (Ni) and iron (Fe) are the main components, and the dislocation density in the crystal grains is selected and set to 10 11 dl / cm 2 or less. The materials that have been made are also known. In other words, in the process of melting the required raw materials and performing the processes of hot rolling, annealing, and controlled rolling, the temperature, time, cooling rate, etc. during annealing are carefully selected and combined, and the dislocation density in the crystal grains is It is also known that the shadow mask is composed of a Ni-Fe-based metal whose C is controlled to 10 11 dl / cm 2 or less. However, the dislocation density in the crystal grains is controlled to 10 11 dl / cm 2 or less.
In the case of Fe-based metal, although the etching property is improved, it is difficult to say that the etching rate is sufficiently high, and the problem of poor productivity still remains.

【0006】本発明は上記事情に対処してなされたもの
で、熱膨脹係数が小さいとともに、少なくとも表面層の
結晶粒内の転位密度が比較的高く、もしくは結晶粒もよ
り微細で良好なエッチング性を呈し、高精度に所要の微
細な電子線通過孔の形設可能なシャドウマスク用素材の
提供を目的とする。
The present invention has been made in view of the above circumstances, and has a small coefficient of thermal expansion and at least a relatively high dislocation density in the crystal grains of the surface layer, or the crystal grains are finer and have good etching properties. An object of the present invention is to provide a material for a shadow mask in which a required fine electron beam passage hole can be formed with high accuracy.

【0007】[0007]

【課題を解決するための手段】本発明に係る第1のシャ
ドウマスク用素材は、ニッケルおよび鉄を主成分とし、
かつ少くとも表面層の結晶粒内の転位密度が1011dl/cm
2 を超えていることを特徴とし、また第2のシャドウマ
スク用素材は、重量比でニッケルを25〜50%、残部が実
質的に鉄もしくは鉄を主体とした鉄−コバルト系から成
り、熱膨脹係数が 7×10-6/℃以下の低熱膨脹合金でか
つ、結晶粒が粒度番号(JIS G0551 による)13以上であ
ることを特徴とする。
A first shadow mask material according to the present invention contains nickel and iron as main components,
And the dislocation density in the crystal grains of the surface layer is at least 10 11 dl / cm
The second shadow mask material is 25 to 50% by weight of nickel, and the balance is substantially iron or iron-cobalt based iron, and has a thermal expansion coefficient. It is a low thermal expansion alloy with a coefficient of 7 × 10 -6 / ° C or less, and the grain size is 13 or more (according to JIS G0551).

【0008】本発明に係る第1のシャドウマスク用素材
は、前記のように Ni-Fe系において、少くとも表面層の
結晶粒内の転位密度を1011dl/cm2 を超えるように制御
されており、好ましくは結晶粒度も粒度番号(JIS G055
1 による) 8以上、さらに好ましくは13以上のものであ
る。そして、前記 Ni-Fe系における組成比は、熱膨脹係
数を 9×10-6/℃以下程度に押さえるため、重量比でNi
25〜45%,残部が実質的にFeであることが望ましいが、
たとえば結晶粒を揃えるため、重量比で 7%程度以下の
Coを添加してもよいし、また転位の絡まりを少なくする
ため、重量比で5%程度以下のCrを添加してもよい。こ
こで、少くとも表面層(10nm〜0.05mm程度)の結晶粒内
の転位密度を1011dl/cm2 を超えるように選択・設定し
たのは、エッチング液(通常はFeCl2 )に対する濡れ性
および迅速なエッチング性を得るためで、少くとも表面
層の結晶粒内の転位密度を1011〜1013dl/cm2 に選択・
制御することがさらに望ましい。さらに、前記 Ni-Fe系
においては、結晶粒や転位密度を制御するため Bや N、
析出硬化成分すたとえばTi,Al,Zr,Nb,Ta,Cuなどで置換
したものでもよく、また不可避的な不純物として、たと
えば重量比でCrを0.2 %以下,C を0.02%以下,Alを0.
02%以下,S を0.0!%以下,P を0.1%以下,Moを0.02
%以下,Coを0.1 %以下,窒素を50 ppm以下,酸素を10
0 ppm 以下,脱酸剤としてのMnを0.5 %以下,Siを0.1
%以下など含んでいてもよい。
As described above, the first shadow mask material according to the present invention is controlled in the Ni-Fe system so that the dislocation density in the crystal grains of the surface layer exceeds 10 11 dl / cm 2. The grain size is preferably also the grain size number (JIS G055
(Depending on 1) 8 or more, more preferably 13 or more. The composition ratio in the Ni-Fe system is Ni by weight in order to keep the coefficient of thermal expansion below 9 × 10 -6 / ° C.
25-45%, the balance is preferably essentially Fe,
For example, in order to arrange the crystal grains, the weight ratio should be about 7% or less.
Co may be added, or Cr may be added in an amount of about 5% by weight or less in order to reduce disentanglement. Here, the dislocation density in the crystal grains of at least the surface layer (about 10 nm to 0.05 mm) was selected and set so as to exceed 10 11 dl / cm 2 because the wettability with the etching solution (usually FeCl 2 ). And to obtain rapid etching property, at least the dislocation density in the crystal grains of the surface layer is selected to be 10 11 to 10 13 dl / cm 2.
It is more desirable to control. Furthermore, in the Ni-Fe system, B and N, in order to control the crystal grains and dislocation density,
It may be replaced by a precipitation hardening component such as Ti, Al, Zr, Nb, Ta, or Cu. As unavoidable impurities, for example, Cr is 0.2% or less by weight ratio, C is 0.02% or less, Al is 0% or less. .
02% or less, S 0.0% or less, P 0.1% or less, Mo 0.02
% Or less, Co 0.1% or less, nitrogen 50 ppm or less, oxygen 10
0 ppm or less, Mn as a deoxidizer of 0.5% or less, Si of 0.1
% Or less may be included.

【0009】なお、前記結晶粒内の転位密度(ρ)の測
定は、いろいろの方法で成し得るが、最も迅速な方法と
してハム(Ham)法がある。この方法は、先ず被測定試料
をエッチングによって薄片化し、透過電子顕微鏡(TEM)
により直接観察して、転位が容易に観察できるように数
万倍の写真をたとえば10枚程度撮り、この写真に全長L
の複数の任意の線を引き、転位線と交わる数を Nとした
場合、次式が得られる。 ρ=2 N/ Lt ρ:転位密度(単位はdislocation line/cm2 ) t :試料薄片の厚み そして、この式より平均の転位密度を計算する。
The dislocation density (ρ) in the crystal grains can be measured by various methods, and the fastest method is the Ham method. In this method, the sample to be measured is first thinned by etching and then transmitted electron microscope (TEM)
Directly observe and take, for example, about ten tens of thousands of photographs so that dislocations can be easily observed.
If N is the number of lines intersecting with the dislocation line, the following equation is obtained. ρ = 2 N / L t ρ: Dislocation density (unit is dislocation line / cm 2 ) t: Thickness of sample slice Then, the average dislocation density is calculated from this formula.

【0010】本発明に係る第2のシャドウマスク用素材
は、重量比でNiを25〜50%もしくはNiを25〜50%および
Coを 2〜10%含み、残部が実質的に鉄から成り、熱膨脹
係数が 7×10-6/℃以下の低熱膨脹合金でかつ、結晶粒
が粒度番号(JIS G0551 による)13以上において、好ま
しくは16以上である。ここで、熱膨脹係数が 7×10-6
℃以下の低熱膨脹合金としては、たとえば前記したいわ
ゆるアンバー合金を始め、スーパーアンバ合金(32Ni-5
Co-63Fe)などが挙げられ、またアンバー合金のNi成分の
一部(数%以内)を、たとえばTi,Al,Zr,Nb,Ta,Cr,Cuな
どで置換したものでもよく、さらに不可避的な不純物と
して、たとえば重量比でCrを0.2 %以下,C を0.02%以
下,Alを0.02%以下,S を0.0!%以下,Pを0.1 %以
下,Moを0.02%以下,Coを0.1 %以下,窒素を50 ppm以
下,酸素を100 ppm 以下,脱酸剤としてのMnを0.5 %以
下,Siを0.1 %以下など含んでいてもよい。しかし、熱
膨脹係数が 7×10-6/℃以下で、かつ結晶粒が粒度番号
(JIS G0551 による)13以上の微細粒であることが要求
される。その理由は、熱膨脹係数が 7×10-6/℃以下で
ないと電子の衝突による昇温で電子線通過孔の位置ズレ
が起り、また結晶粒が粒度番号(JIS G0551 による)13
以上でないと平滑性の良好な内壁面を有する電子線通過
孔を高精度に形設し得ないことがそれぞれ実験的に確認
されたからである。 なお、本発明によればシャドウマ
スクにおける電子線通過孔の孔径を約 100μm としたと
き、これらの孔内に存在していた結晶粒の数は約107
以上であり、また、結晶粒が粒度番号(JIS G0551 によ
る)No.12 以下の結晶粒の数は約5×106 個以下とな
る。
The second shadow mask material according to the present invention comprises, by weight, 25 to 50% Ni or 25 to 50% Ni and
A low thermal expansion alloy containing 2 to 10% of Co, the balance being substantially iron, having a thermal expansion coefficient of 7 × 10 -6 / ° C or less, and having crystal grains with a grain size number (according to JIS G0551) of 13 or more, preferably Is 16 or more. Here, the coefficient of thermal expansion is 7 × 10 -6 /
Examples of the low thermal expansion alloy having a temperature of ℃ or below include the so-called amber alloy described above, and super-amber alloy (32Ni-5
Co-63Fe), etc., and a part (within a few percent) of the Ni component of the amber alloy may be replaced with, for example, Ti, Al, Zr, Nb, Ta, Cr, Cu, etc. As the impurities, for example, Cr is 0.2% or less by weight, C is 0.02% or less, Al is 0.02% or less, S is 0.0!% Or less, P is 0.1% or less, Mo is 0.02% or less, Co is 0.1% or less. , Nitrogen 50 ppm or less, Oxygen 100 ppm or less, Mn as a deoxidizer of 0.5% or less, Si may be 0.1% or less. However, it is required that the coefficient of thermal expansion is 7 × 10 −6 / ° C. or less and that the crystal grains are fine grains having a grain size number (according to JIS G0551) of 13 or more. The reason is that if the coefficient of thermal expansion is not less than 7 × 10 -6 / ° C, the electron beam passage hole will be misaligned due to the temperature rise due to electron collision, and the crystal grains will have a grain size number (according to JIS G0551).
This is because it was experimentally confirmed that the electron beam passage hole having the inner wall surface with good smoothness could not be formed with high accuracy unless the above conditions were satisfied. According to the present invention, when the hole diameter of the electron beam passage holes in the shadow mask is set to about 100 μm, the number of crystal grains existing in these holes is about 10 7 or more, and the crystal grains are The number of crystal grains with a grain size number (according to JIS G0551) No. 12 or less is approximately 5 x 10 6 or less.

【0011】このような本発明は、いわゆるアンバー合
金など Ni-Fe系合金の溶融体を双ロール法などにより急
冷キャスティング後、冷間圧延,焼鈍を繰り返し薄帯化
した場合、あるいは双ロール法などにより急冷して、厚
さ数mm程度の薄膜化ないし薄帯化し、さらに要すれば焼
鈍した後、冷間圧延してたとえば0.13〜0.25mm程度の薄
板にした場合、従来の手段で調整圧延などした場合に比
べて、いずれの場合も容易に、かつ一様な孔径の電子線
通過孔を穿設(開孔)し得ることを見出し達成したもの
である。つまり、結晶粒内の転位密度が1011dl/cm2
超えた場合、迅速なエッチング性を呈するとともに微細
孔のエッチング穿設が可能こと、もしくは結晶粒が粒度
番号(JIS G0551 による)13以上の場合、結晶粒は1/3
程度以下のほぼ均一な微細状態を呈して微細孔のエッチ
ング穿設が可能であるとの知見に基づくものである。
According to the present invention, a melt of a Ni-Fe alloy such as a so-called amber alloy is rapidly cooled by a twin roll method and then cold rolled and annealed repeatedly to form a thin strip, or a twin roll method is used. If it is rapidly cooled to a thin film or a ribbon with a thickness of about several mm, and if necessary, after annealing, it is cold rolled into a thin plate of, for example, 0.13 to 0.25 mm. The inventors have found that the electron beam passage hole having a uniform diameter can be easily formed (opened) in any case as compared with the above case. In other words, when the dislocation density in the crystal grains exceeds 10 11 dl / cm 2 , it exhibits a rapid etching property and enables fine holes to be formed by etching, or the crystal grains have a grain size number (according to JIS G0551) of 13 or more. In case of, the crystal grain is 1/3
It is based on the knowledge that it is possible to form fine holes by etching by exhibiting a substantially uniform fine state below a certain level.

【0012】[0012]

【作用】本発明に係るシャドウマスク用素材は、熱膨脹
係数が 7×10-6/℃以下の低熱膨脹合金なので、電子の
衝突により昇温した場合も形設された電子線通過孔の位
置ズレが起こる恐れも解消されるばかりてなく、少くと
も表面層は結晶粒内の転位密度が比較的高く、あるいは
全体的に結晶粒も微細状態を保持しているので、フォト
エッチング手法により所要の微細な電子線通過孔を、容
易かつ高精度に形設することが可能となる。
The material for the shadow mask according to the present invention is a low thermal expansion alloy having a thermal expansion coefficient of 7 × 10 −6 / ° C. or less, so that the position shift of the electron beam passage hole formed even when the temperature is increased by the collision of electrons. Not only is the possibility of occurrence of the above-mentioned problem resolved, but at least the surface layer has a relatively high dislocation density in the crystal grains, or the crystal grains as a whole hold a fine state. It is possible to easily and accurately form a large electron beam passage hole.

【0013】[0013]

【実施例】以下本発明の実施例を説明する。EXAMPLES Examples of the present invention will be described below.

【0014】実施例1〜6 表−1に示す組成の合金を用意し、それぞれ融点以上で
溶融して調製した溶湯を、高速回転する双ロール上に流
し急冷して厚さ 2 mm 、幅800 mmの薄板を得た。これら
の薄板を 800℃で 時間真空アニール(焼鈍)した後、
94%の圧下率で冷間圧延して厚さ0.15 mm のシャドウマ
スク用素材を得た。
Examples 1 to 6 Alloys having the compositions shown in Table 1 were prepared, melts prepared by melting each of them at a melting point or higher were poured onto twin rolls rotating at high speed and rapidly cooled to a thickness of 2 mm and a width of 800. A thin plate of mm was obtained. After vacuum annealing (annealing) these thin plates at 800 ° C for an hour,
Cold rolling was performed at a reduction rate of 94% to obtain a shadow mask material having a thickness of 0.15 mm.

【0015】上記で得た各シャドウマスク用素材につい
て、前記した結晶粒内の転位密度の測定方法により、表
面層および内部における結晶粒内の転位密度をそれぞれ
測定した結果を表−1に併せて示した。なお、比較例1
として、インゴットから鍛造,熱間圧延,冷間圧延を繰
り返して得た表面層の結晶粒内の転位密度が1011dl/cm
2 以下の場合も併せて示した。(以下余白) 前記の各シャドウマスク用素材の両面に、フォトレジス
トを塗布し、これを乾燥した後レジスト膜表面にスロッ
トもしくはドット形状の基準パターンが形成されたフィ
ルムを密着配置し、前記レジスト膜を露光,現像した。
この現像により未露光部分のフォトレジストを溶解除去
した後、残存しているレジストパターンをマスクとし
て、露出しているシャドウマスク用素材面を、FeCl2
液で選択エッチングし、電子ビーム通過孔を開孔(穿
設)した。その後、マスクとして機能したレジストパタ
ーンを、熱アルカリ溶液により除去して、シャドウマス
クの原板となるフラットマスクを製作した。このフラッ
トマスク製作過程での、FeCl2 溶液によるエッチング速
度をそれぞれ測定したところ、表−1に示すごとくであ
った。なお、エッチング速度は比較例1の場合を 1とし
たときの相対値である。次いで、上記でそれぞれ得たフ
ラットマスクを、 H2 気流中, 830℃で焼鈍を施して耐
力を下げてから、 150℃で温間プレス加工してシャドウ
マスクの形に仕上げた。その後、これらをトリクロルエ
タンの蒸気で洗浄し、 690℃に保持された連続黒化炉で
20分間加熱したところ、各実施例の場合は表面に密着性
の良好な黒色被膜が成長したシャドウマスクが得られ
た。これら各実施例のシャドウマスクを用いて構成した
カラーブラウン管を動作させたところ、色ズレがなくき
めの細かい画像が得られた。すなわち、色ズレなど認め
られない高品位の画像を呈するカラーテレビとして機能
した。
With respect to each of the shadow mask materials obtained above, the results of measuring the dislocation densities inside the crystal grains in the surface layer and inside by the above-mentioned measuring method of the dislocation densities inside the crystal grains are also shown in Table 1. Indicated. Comparative Example 1
As a result, the dislocation density in the crystal grains of the surface layer obtained by repeating forging, hot rolling and cold rolling from the ingot is 10 11 dl / cm 2.
The case of 2 or less is also shown. (Below margin) Photoresist is applied to both sides of each of the shadow mask materials described above, dried, and then a film having a slot or dot-shaped reference pattern formed on the resist film surface is closely arranged, and the resist film is exposed and developed. did.
After this development, the photoresist in the unexposed area is dissolved and removed, and the exposed shadow mask material surface is selectively etched with FeCl 2 solution using the remaining resist pattern as a mask to open electron beam passage holes. A hole was made. After that, the resist pattern functioning as a mask was removed by a hot alkaline solution to manufacture a flat mask which became a master plate of the shadow mask. The etching rates of the FeCl 2 solution in the flat mask manufacturing process were measured, and the results were as shown in Table 1. The etching rate is a relative value when the value of Comparative Example 1 is 1. Next, each of the flat masks obtained above was annealed at 830 ° C. in a H 2 stream to reduce the yield strength, and then warm pressed at 150 ° C. to finish it into a shadow mask shape. After that, these were washed with trichloroethane vapor and then in a continuous blackening furnace maintained at 690 ° C.
After heating for 20 minutes, in each of the examples, a shadow mask having a black film with good adhesion grown on the surface was obtained. When the color CRT constructed by using the shadow mask of each of these examples was operated, a fine image without color shift was obtained. In other words, it functioned as a color television that provided high-quality images with no discernible color shift.

【0016】実施例7〜9 重量比で36%Ni、残部が実質的にFeから成る合金をその
融点以上で溶融して調製した溶湯を、高速回転する双ロ
ール上に流し急冷して厚さ2.5 mm、幅800 mmの薄板を得
た。この薄板を 700℃で1時間焼鈍後、94%の圧下率で
冷間圧延して厚さ0.15 mm のシャドウマスク用素材を得
た。このようにして得たシャドウマスク用素材につい
て、常套の手段で熱膨脹係数を測定したところ、1.2 ×
10-6/℃であり、またJISGO551の規定により結晶粒を測
定した結果、粒度番号No.17 (粒径約 1μm )以下であ
った。
Examples 7 to 9 A molten metal prepared by melting an alloy having a weight ratio of 36% Ni and the balance substantially consisting of Fe at a temperature equal to or higher than its melting point was poured onto twin rolls rotating at high speed and rapidly cooled to a thickness. A thin plate having a width of 2.5 mm and a width of 800 mm was obtained. This thin plate was annealed at 700 ° C. for 1 hour and then cold rolled at a reduction rate of 94% to obtain a material for a shadow mask having a thickness of 0.15 mm. For the shadow mask material thus obtained, the coefficient of thermal expansion was measured by a conventional method to find that it was 1.2 ×
The particle size was 10 −6 / ° C. and the crystal grains were measured according to JIS GO551. As a result, the grain size was No. 17 (particle size: about 1 μm) or less.

【0017】上記で得たシャドウマスク用素材(実施例
7)を所定の大きさに切断した後、いわゆるフォトエッ
チングによって、所要の電子線通過孔を形設(開孔)し
た。この電子線通過孔を形設(開孔)したシャドウマス
ク用素材について観察したところ、電子線通過孔の内壁
面は全体的に平滑性が良好で、高精度に所定寸法の開孔
を成していた。また、このシャドウマスク用素材は、前
記結晶粒の小さいことに伴い、すぐれた機械的強度を呈
するため、各種の操作においても取扱い易かった。
After the material for a shadow mask (Example 7) obtained above was cut into a predetermined size, a required electron beam passage hole was formed (opened) by so-called photo-etching. Observation of the shadow mask material in which the electron beam passage hole was formed (opened) revealed that the inner wall surface of the electron beam passage hole had good smoothness as a whole, and the hole of a predetermined size was formed with high accuracy. Was there. In addition, since this shadow mask material exhibits excellent mechanical strength due to the small crystal grains, it was easy to handle in various operations.

【0018】次いで、前記電子線通過孔を形設(開孔)
したシャドウマスク用素材をプレス成型してから、黒化
膜を付けてシャドウマスクとし、このシャドウマスクを
用いてカラーテレビを構成した。そして、このように構
成されたカラーテレビを動作させたところ、色ズレがな
くきめの細かい画像が得られた。すなわち、色ズレなど
認められない高品位の画像を呈するカラーテレビとして
機能した。
Next, the electron beam passage hole is formed (open hole).
The above shadow mask material was press-molded, and then a blackening film was attached to form a shadow mask, and a color television was constructed using this shadow mask. Then, when the color television configured as described above was operated, a finely detailed image without color misregistration was obtained. In other words, it functioned as a color television that provided high-quality images with no discernible color shift.

【0019】なお、上記において、溶湯を高速回転する
双ロール上に流し急冷する条件などを変え、JISGO551の
規定による結晶粒が、粒度番号No.14 (粒径約 3μm )
…実施例8、組成を32Ni-5Co-63Fe とした以外は、実施
例7の場合と同様にして得た粒度番号No.17 のシャウマ
スク用素材…実施例9…および実施例7において粒度番
号のみを粒度番号No.12 (粒径約 6μm )とした比較例
2のシャドウマスク用素材をそれぞれ得て、前記と同様
の処理・加工によりシャドウマスクを作成し、電子線通
過孔の形状を調べた結果は表−2に示すごとくであっ
た。(以下余白)
[0019] In the above, the conditions for quenching the molten metal by flowing it on a twin roll rotating at a high speed are changed, and the crystal grains according to JIS GO551 have a grain size number No. 14 (grain size about 3 μm).
… Example 8, except for the composition being 32Ni-5Co-63Fe, obtained in the same manner as in Example 7 and having a grain size number of No. 17, which is the material for the shroud mask ... Example 9 ... and Example 7 Only the material for the shadow mask of Comparative Example 2 having only No. 12 as the particle size number (about 6 μm in particle size) was prepared, and the shadow mask was prepared by the same processing and processing as above, and the shape of the electron beam passage hole was examined. The results are shown in Table 2. (Below margin)

【0020】[0020]

【発明の効果】上記説明したように、本発明に係るシャ
ドウマスク用素材は、熱膨脹係数が小さいばかりでな
く、結晶粒内の転位密度が1011dl/cm2 を超えたものと
することにより、あるいは結晶粒をJISG0551の規定によ
る粒度番号No.13 以上の微細粒形型が、特に選択されて
いる。したがって、たとえばフォトエッチングによる電
子線通過孔の形設(開孔)において、高精度に孔径の一
様な電子線通過孔を形設し得るとともに、電子の衝突に
よる昇温に伴う電子線通過孔の位置ズレも防止され、カ
ラーテレビに組み込んで実用に供した場合、色ズレなど
起こらず鮮明できめ細かい(高画質の)画像が得られ
る。しかも、前記シャドウマスク用素材は、結晶粒内の
転位密度が1011dl/cm2 を超えたものの場合は、前記フ
ォトエッチングによる電子線通過孔の形設(開孔)にお
いて、その迅速なエッチング性により生産性を大幅に改
善し得るし、また結晶粒が粒度番号No.13 以上の微細粒
形とした場合は、すぐれた耐ハウリング性を有するばか
りでなく、いわゆる双ロール急冷法によって容易に製造
し得るなどの利点もある。
As described above, the shadow mask material according to the present invention has not only a small coefficient of thermal expansion but also a dislocation density in the crystal grains of more than 10 11 dl / cm 2. Alternatively, a fine grain type with a grain size of No. 13 or more according to JIS G0551 is particularly selected. Therefore, for example, in the formation (opening) of the electron beam passage hole by photoetching, the electron beam passage hole having a uniform hole diameter can be formed with high accuracy, and the electron beam passage hole due to the temperature rise due to the collision of electrons can be formed. The position shift is also prevented, and when it is put into a color television and put into practical use, a clear and fine (high quality) image can be obtained without causing color shift. Moreover, when the dislocation density in the crystal grains exceeds 10 11 dl / cm 2 , the material for the shadow mask is quickly etched in the formation (opening) of electron beam passage holes by the photoetching. The productivity can be greatly improved by the properties, and when the crystal grains have a fine grain size of No. 13 or more, they not only have excellent howling resistance, but can be easily processed by the so-called twin roll quenching method. It also has the advantage that it can be manufactured.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 盛 二美男 神奈川県横浜市磯子区新杉田町8番地 株 式会社東芝横浜事業所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshio Mori 8 Shinsita-cho, Isogo-ku, Yokohama-shi, Kanagawa Stock company Toshiba Yokohama office

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ニッケルおよび鉄を主成分とし、かつ少
くとも表面層の結晶粒内の転位密度が1011dl/cm2 を超
えていることを特徴とするシャドウマスク用素材。
1. A material for a shadow mask, which is mainly composed of nickel and iron and has a dislocation density in crystal grains of a surface layer of at least 10 11 dl / cm 2 .
【請求項2】 重量比でニッケルを25〜50%、残部が実
質的に鉄もしくは鉄を主体とした鉄−コバルト系から成
り、熱膨脹係数が 7×10-6/℃以下の低熱膨脹合金でか
つ、結晶粒が粒度番号(JIS G0551 による)13以上であ
ることを特徴とするシャドウマスク用素材。
2. A low thermal expansion alloy having a thermal expansion coefficient of 7 × 10 −6 / ° C. or less, comprising 25 to 50% by weight of nickel, the balance being substantially iron or an iron-cobalt system containing iron as a main component. In addition, the material for shadow masks is characterized in that the crystal grain size is 13 or more (according to JIS G0551).
JP33306291A 1991-09-25 1991-12-17 Material for shadow mask Pending JPH05144384A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3-245535 1991-09-25
JP24553591 1991-09-25

Publications (1)

Publication Number Publication Date
JPH05144384A true JPH05144384A (en) 1993-06-11

Family

ID=17135142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33306291A Pending JPH05144384A (en) 1991-09-25 1991-12-17 Material for shadow mask

Country Status (1)

Country Link
JP (1) JPH05144384A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000046692A (en) * 1998-12-31 2000-07-25 구자홍 Cathode electrode for cathode ray tube
WO2019098167A1 (en) * 2017-11-14 2019-05-23 大日本印刷株式会社 Metal plate for producing vapor deposition masks, production method for metal plates, vapor deposition mask, production method for vapor deposition mask, and vapor deposition mask device comprising vapor deposition mask

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000046692A (en) * 1998-12-31 2000-07-25 구자홍 Cathode electrode for cathode ray tube
WO2019098167A1 (en) * 2017-11-14 2019-05-23 大日本印刷株式会社 Metal plate for producing vapor deposition masks, production method for metal plates, vapor deposition mask, production method for vapor deposition mask, and vapor deposition mask device comprising vapor deposition mask
JP2020079441A (en) * 2017-11-14 2020-05-28 大日本印刷株式会社 Metal plate for producing vapor deposition mask, method for producing metal plate, vapor deposition mask, method for producing vapor deposition mask, and vapor deposition mask apparatus provided with vapor deposition mask
JPWO2019098167A1 (en) * 2017-11-14 2020-12-17 大日本印刷株式会社 A metal plate for manufacturing a vapor deposition mask, a method for manufacturing the metal plate, a vapor deposition mask, a method for manufacturing the vapor deposition mask, and a vapor deposition mask apparatus including the vapor deposition mask.
JP2021036076A (en) * 2017-11-14 2021-03-04 大日本印刷株式会社 Metal plate for manufacturing vapor deposition mask, manufacturing method of metal plate, vapor deposition mask, manufacturing method of vapor deposition mask, and vapor deposition mask device including vapor deposition mask
US11237481B2 (en) 2017-11-14 2022-02-01 Dai Nippon Printing Co., Ltd. Metal plate for manufacturing deposition mask and manufacturing method for metal plate, and deposition mask and manufacturing method for deposition mask
US11733607B2 (en) 2017-11-14 2023-08-22 Dai Nippon Printing Co., Ltd. Metal plate for producing vapor deposition masks, inspection method for metal plates, production method for metal plates, vapor deposition mask, vapor deposition mask device, and production method for vapor deposition masks

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