JPH05136128A - Ic chip - Google Patents

Abstract

PURPOSE:To form a circuit wiring without using a photo mask, and obtain a circuit wiring system of an IC chip which system can flexibly correspond to the change of a wiring pattern. CONSTITUTION:On an IC chip 1a which has only the common part or the general purpose part 15 out of circuit wiring and is unfinished or half finished, an addition part 17 of the circuit wiring which part is composed of an ultrafine particle film is drawn and wired by using a gas deposition method, and an IC chip 1b for a specified use is completed.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to an IC chip. Specifically, an IC having circuit wiring made of an ultrafine particle film
Regarding chips.

[0002]

2. Description of the Related Art Conventionally, when a circuit wiring is formed on an IC chip, an electrode material such as Al is vapor-deposited on the surface of a wafer and then a resist ink is printed on the entire surface of an Al vapor deposition film. A photomask is overlaid on the resist ink, exposed, and developed to form a resist film having a predetermined pattern, and an Al vapor deposition film is etched through the resist film to form a circuit wiring having a predetermined pattern.

[0003]

Therefore, a photomask is required to form circuit wiring on an IC chip by the conventional method, and even if an IC chip is ordered, a photomask must be manufactured first. As a result, the period from order receipt to delivery has to be long.

Further, only one type of IC chip can be manufactured from one photomask, and if the pattern of circuit wiring is changed even at one place, it is necessary to remake the photomask, and the circuit wiring pattern can be flexibly changed. We could not respond to the change.

The present invention has been made in view of the above-mentioned drawbacks of the conventional examples, and an object thereof is to form a circuit wiring without using a photomask, and further to change a wiring pattern. In particular, it is to provide an IC chip which can be flexibly dealt with.

[0006]

A first IC according to the present invention
The chip is characterized in that the circuit wiring is formed on the surface of the conductor ultrafine particle film formed by the gas deposition method.

The second IC chip according to the present invention is
It is characterized in that the circuit wiring is completed by the uncompleted or semi-completed circuit wiring and the additional circuit wiring made of the conductor ultrafine particle film formed by the gas deposition method.

[0008]

In the present invention, the circuit wiring having a desired pattern can be formed by moving the nozzle or the like for spraying the ultrafine particles onto the wafer relative to the wafer. Therefore, a photomask is not required and etching is not required, and circuit wiring having a desired pattern can be formed by a drawing method in a dry atmosphere.

Further, since it is not necessary to fabricate a photomask and it is not necessary to perform etching, cleaning after etching, etc., it is possible to shorten the manufacturing period and delivery period of the IC chip.

Further, if only the common portion having high versatility is formed as an unfinished or semi-finished circuit wiring and the circuit wiring of the ultrafine particle film is added depending on the application, 1
It is possible to obtain a plurality of types of circuit wirings from various types of unfinished or semi-finished circuit wirings, and it is possible to support customization of IC chips.

Further, by combining with a method for cutting circuit wiring using laser light, the circuit wiring can be easily corrected.

Further, the circuit wiring can be formed, modified, or added not only in the state of the wafer but also in the state of the chip or after being mounted on the substrate or the like.

[0013]

EXAMPLE FIG. 1 is a schematic diagram showing an ultrafine particle film forming apparatus 3 for forming a conductor ultrafine particle film 2. This is a device that directly draws the ultrafine particle film 2 by using the gas deposition method (published in the material of the 90th New Ceramics Forum), and the ultrafine particle generation chamber 4 and the film are used. A forming chamber 5 is provided, and both chambers 4 and 5 are connected by a transfer pipe 6. In addition, the inside of the ultrafine particle generation chamber 4 and the film formation chamber 5
The inside can be depressurized by a vacuum pump 7. A gas 9 such as He gas is supplied to the ultrafine particle generation chamber 4 via a flow rate adjusting valve 8. This ultrafine particle generation chamber 4
Is provided with an evaporation tank 10 using a resistance heating method as a heat source. Inside the evaporation tank 10, a conductor raw material 11 for forming the ultrafine particle film 2 is placed. On the other hand, a manipulator 12 for holding and moving the IC chip 1 is provided in the film forming chamber 5, and a nozzle 13 projects from the transfer pipe 6 toward the manipulator 12 side.

Thus, the IC chip 1 is held by the manipulator 12, the film forming chamber 5 is depressurized by the vacuum pump 7, and the gas 9 is sent to the ultrafine particle generating chamber 4 for pressurization, while the vaporization tank 10 conducts the conductive material. When 11 is heated to evaporate, the evaporated atoms aggregate in the air to become ultrafine particles,
Due to the pressure difference between the ultrafine particle generation chamber 4 and the film forming chamber 5, the gas 9 such as He gas is sent to the film forming chamber 5 through the carrier pipe 6 and is jetted from the nozzle 13 to the surface of the IC chip 1 at high speed. The ultrafine particle film 2 is formed as shown in FIG. At this time, by moving and scanning the IC chip 1, the ultrafine particle film 2 having a desired pattern can be formed without using a mask.

For example, by manipulator 12, IC
By forming the ultrafine particle film 2 while linearly moving the chip 1, the ultrafine particle film 2 having a linear pattern can be formed as shown in FIG. The width of the linear ultrafine particle film 2 is determined by the tip diameter of the nozzle 13. If the nozzle 13 is opened and closed by the shutter at that time, the ultrafine particle film 2 having an intermittent (or dot-like) pattern can be obtained as shown in FIG. 3B. Further, if the IC chip 1 is rotated by the manipulator 12, as shown in FIG. 3C, the ultrafine particle film 2 having an annular pattern can be formed. Also, IC chip 1
It is also possible to form a planar ultrafine particle film 2 by scanning the two-dimensionally.

In this way, by forming the ultrafine particle film 2 on the IC chip 1 by the gas deposition method, it is possible to form the circuit wiring made of the ultrafine particle film 2 inline without using a mask or the like, and mass production. Suitable for Moreover, the conductor raw material 11 that can be used as circuit wiring
The selection range of the material of is also widened. Further, since the IC chip 1 is not heated, it is possible to use an IC chip having no heat resistance or an IC chip having low heat resistance. Furthermore, the density, grain size, crystal grain boundaries, etc. of the ultrafine particle film 2 are changed depending on the pressure difference between the ultrafine particle generating chamber 4 and the film forming chamber 5, the temperature of the IC chip 1, the temperature of the ultrafine particles, the jetting speed, the flow rate, and the like. The film thickness of the ultrafine particle film 2 can be changed by the moving speed of the IC chip 1, the injection amount of the ultrafine particles, the overcoating of the ultrafine particle film, and the like. Therefore, by controlling these, the ultrafine particle film can be controlled. The resistance value of 2 can be adjusted.

As the material for forming the ultrafine particle film 2, various materials can be used, for example, Fe and N.
i, Co, Fe-Ni, Fe-Co, Ni-Cu, C
u, Ag, Au, Sn, Ag-Cu, Ti, Mn, T
a, Mo, Al, Pb, In, Cr, Pt, Sr, P
It is possible to use d, Y, Nb, Li, Ba, C, Bi, Ca, and other metal and alloy systems.

If an alloy of metals having the same boiling point temperature is put in the evaporation tank 10, the ultrafine particle film 2 of the alloy can be formed. Furthermore, if two or more evaporation tanks 10 are provided in the ultrafine particle generation chamber 5 and different metal materials are put therein, even if the boiling temperatures of both metal materials are different, binary alloys (eutectic alloys) The ultrafine particle film 2 can be formed. For example, according to such an alloy manufacturing method, it is possible to improve the ohmic contact property of the ultrafine particle film 2 and to add an appropriate dopant to the base metal.

FIG. 4 is a schematic diagram showing another ultrafine particle film forming apparatus 14. This is two ultrafine particle generation chambers 4
a and 4b and a film forming chamber 5, both ultrafine particle generating chambers 4a,
4b and the film forming chamber 5 are connected by transfer pipes 6a and 6b, respectively. Each ultrafine particle generation chamber 4a, 4b is provided with an evaporation tank 10a, 10b using a resistance heating method as a heat source, and a different raw material 11a for forming the ultrafine particle film 2 is provided in each evaporation tank 10a, 10b. , 11b (at least one of which is a conductive material). on the other hand,
A manipulator 12 for holding and moving the IC chip 1 is provided in the film forming chamber 5, and nozzles 13a and 13b are respectively provided from the adjacent transfer pipes 6a and 6b toward the manipulator 12 side. Is protruding.

Then, the manipulator 12 causes the I
While moving the C chip 1, ultrafine particles of the first raw material 11a are jetted from the nozzle 13a to the IC chip 1 at high speed to form the lower ultrafine particle film 2a, and the second raw material 11b.
The ultrafine particles consisting of are ejected from the nozzle 13b to form the upper ultrafine particle film 2b on the lower ultrafine particle film 2a. As a result, the ultrafine particle film 2 composed of the lower ultrafine particle film 2a and the upper ultrafine particle film 2b having the gradient composite composition as shown in FIG. 5 is obtained.

Therefore, if the circuit wiring made of the ultrafine particle film is formed by the gas deposition method using the apparatus as described above, the circuit wiring is formed in the IC chip 1 in the dry atmosphere by the drawing method without using the mask. can do. Further, the circuit wiring of the IC chip 1 may be entirely formed of an ultrafine particle film formed by a gas deposition method, or a part thereof may be formed of an ultrafine particle film formed by a gas deposition method, which is suitable for a custom IC or the like. Therefore, a specific circuit wiring configuration will be described below.

FIGS. 6A and 6B are plan views showing a semi-finished IC chip (custom IC chip) 1a and a finished IC chip 1b according to an embodiment of the present invention. The semi-finished IC chip 1a has a circuit wiring 15 of a common portion of the circuit wiring on the surface of a wafer having a predetermined semiconductor structure completed.
Only, and the passivation film 16 is formed thereon. This (commonly completed) circuit wiring 15
Is formed by vapor-depositing a metal material for electrodes such as Al on the surface of a wafer and etching this, and wiring pads 15a are formed so that necessary wiring can be provided later depending on the application. Passivation film 16
Exposed from.

Therefore, in order to make the semi-finished product (general-purpose product) of the IC chip 1a into a finished product for a specific purpose, the gas deposition method is used by using the above ultrafine particle film forming apparatus at the time of shipping or assembling. Wiring pad 15a that needs to be connected by
Circuit wirings 17 made of ultrafine particles are drawn in a diagonal pattern as shown in FIG. 6B to complete the IC chip 1b and its circuit wirings.

When the use is different, depending on the use, for example, as shown in FIG. 7A, the wiring pads 15a facing each other are connected by the circuit wiring 17 of the ultrafine particle film, An IC chip 1b for different applications may be provided by wiring the circuit wiring 17 in series with the wiring pad 15a as shown in FIG. 7B or by wiring as shown in FIG. 7C.
Can be manufactured. In addition to the addition of the circuit wiring 17 made of the ultrafine particle film by the gas deposition method, if the circuit wiring of the semi-finished IC chip 1a is disconnected by the laser light, more kinds of IC chips can be manufactured. You can

FIG. 8 (a) shows another pattern of the circuit wiring 15 of the semi-finished IC chip 1a according to another embodiment of the present invention, in which the end portions of the circuit wiring 15 are connected as needed. Are approaching each other and facing each other. Therefore, when it is necessary to connect the circuit wirings 15 to each other, the circuit shown in FIG.
As shown in (b), circuit wiring 17 made of an ultrafine particle film is formed in a dot shape by a gas deposition method to form wiring pad 1
5a need only be electrically connected to each other, circuit wiring 17
Drawing efficiency is improved. Moreover, since the exposed length or exposed area of the circuit wiring 17 is reduced, the reliability of the IC chip 1b is not easily impaired.

9A and 9B show a circuit wiring method for an IC chip according to still another embodiment of the present invention. What is shown in FIG. 9A is a CPU (microprocessor).
18 is an unfinished IC chip 1a in which standard cells such as 18 and memory 19 are provided without wiring. As shown in FIG. 9B, this IC chip 1a is C
The electrode of the PU 18 and the electrode of the memory 19 are connected by a circuit wiring 17 made of an ultrafine particle film by a gas deposition method,
The IC chip 1b for a specific application is manufactured according to the specifications required by the user.

FIGS. 10A and 10B show another circuit wiring method for an IC chip according to another embodiment of the present invention. FIG. 10A shows a state in which the IC chip 1a of FIG. 9A is mounted on the substrate 20 and a wire 21 is bonded between the IC chip 1a and the substrate 20. The circuit wiring of the IC chip 1a is possible even after mounting on the substrate 20, and FIG. 10 (b) shows the I wiring as shown in FIG. 10 (a).
It shows a state in which the circuit wiring 17 made of an ultrafine particle film is provided between the CPU 18 and the memory 19 by the gas deposition method with the C chip 1a mounted on the substrate 20.

FIG. 11 is a sectional view showing an IC chip 1b according to still another embodiment of the present invention. In this embodiment, after the circuit wirings 17a and 17b made of the ultrafine particle film are formed on the wafer 22 by the gas deposition method,
The passivation film 23 is formed on the circuit wiring by the gas deposition method to improve the moisture resistance and migration resistance of the IC chip 1b. Also,
By covering the circuit wirings 17a and 17b with the passivation film 23, the circuit wirings 17a and 17b are crossed to perform crossover wiring.

[0029]

According to the present invention, an ultrafine particle flow or IC
An ultrafine particle film having a desired pattern can be obtained by scanning the chip, and circuit wiring can be formed by a simple process by a dry method without using a photomask or the like. Therefore, the manufacturing period and delivery date of the IC chip can be shortened.

Moreover, according to the gas deposition method, the material of the ultrafine particle film is not limited, and the selection range of the wiring material is widened. In addition, the risk of applying thermal stress to the IC chip is reduced.

If only the common parts having high versatility are formed as unfinished circuit wiring and the circuit wiring of the ultrafine particle film is added according to the application, one kind of unfinished circuit wiring is used. Multiple types of circuit wiring can be obtained, and IC
It is also possible to customize the chip.

Furthermore, the circuit wiring can be formed, modified, or added not only in the state of the wafer but also in the state of the chip or after being mounted on the substrate or the like.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram showing an ultrafine particle film forming apparatus according to an embodiment of the present invention.

FIG. 2 is a partially cutaway front view showing an ultrafine particle film formed on an IC chip by the same device.

3 (a), (b) and (c) are diagrams showing several examples of patterns of an ultrafine particle film formed by the ultrafine particle film forming apparatus.

FIG. 4 is a schematic configuration diagram showing an ultrafine particle film forming apparatus according to another embodiment of the present invention.

FIG. 5 is a partially cutaway front view showing an ultrafine particle film formed on an IC chip by the same device.

6A and 6B are one embodiment of the present invention, in which FIG. 6A is a plan view showing a semi-finished IC chip, and FIG. 6B is a plan view showing a finished IC chip.

7 (a), (b) and (c) are plan views showing another wiring example of the same.

8A and 8B are another embodiment of the present invention, wherein FIG. 8A is a plan view showing circuit wiring of a semi-finished IC chip, and FIG. 8B is a plan view showing circuit wiring of a finished IC chip. is there.

9A and 9B are still another embodiment of the present invention, in which FIG. 9A is a plan view showing an unfinished IC chip, and FIG. 9B is a plan view showing circuit wiring of the finished IC chip.

FIG. 10 is still another embodiment of the present invention, including (a)
FIG. 3A is a perspective view showing an unfinished IC chip mounted on a substrate, and FIG. 6B is a perspective view showing a finished IC chip mounted on a substrate.

FIG. 11 is a sectional view showing still another embodiment of the present invention.

[Explanation of symbols]

 1a, 1b IC chip 15 circuit wiring 17, 17a, 17b Circuit wiring made of ultrafine particle film

Claims (2)

[Claims] 1. An IC in which circuit wiring is formed on the surface by a conductor ultrafine particle film formed by a gas deposition method.
Chips. 2. An IC in which circuit wiring is completed by uncompleted or semi-completed circuit wiring and additional circuit wiring formed of a conductor ultrafine particle film formed by a gas deposition method.
Chips.