JPH05109831A - Bonding device and its method - Google Patents

Bonding device and its method

Info

Publication number
JPH05109831A
JPH05109831A JP27091191A JP27091191A JPH05109831A JP H05109831 A JPH05109831 A JP H05109831A JP 27091191 A JP27091191 A JP 27091191A JP 27091191 A JP27091191 A JP 27091191A JP H05109831 A JPH05109831 A JP H05109831A
Authority
JP
Japan
Prior art keywords
semiconductor
lead
leads
bonding
pressing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27091191A
Other languages
Japanese (ja)
Inventor
Masaharu Yoshida
正治 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP27091191A priority Critical patent/JPH05109831A/en
Publication of JPH05109831A publication Critical patent/JPH05109831A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/79Apparatus for Tape Automated Bonding [TAB]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To press a plurality of leads against the junction of a semiconductor equally by clamping the bases of leads and pressing the middle parts of the leads, and pressing the tops to the side of the semiconductor, resisting spring property. CONSTITUTION:This device comprises a material feeding mechanism, which feeds a semiconductor 1 onto a semiconductor cradle 3, a positioning means, which places a lead 9 on the semiconductor 1 and positions it, and a junction means, which joins the lead 9 with the semiconductor 1. Time positioning mechanism is equipped with a clamp means 5 consisting of a pair of holders 6 and 7n which clamp the base of the lead 9. On side of a pair of holders 6 and 7 is extended to the middle part of the lead 9, and this extension end is provided with a pressing projection 7a which presses the top of the this lead to the side of the semiconductor, resisting the spring property of this lead 9. And, laser equipment is arranged, as a junction means, above the semiconductor 1. Hereby, a device, which can press the lead 9 pressed equally, and also is highly accurate, can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体にリードを接続
するボンディング装置およびボンディング方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding apparatus and a bonding method for connecting leads to a semiconductor.

【0002】[0002]

【従来の技術】図2は、一般的な従来のボンディング装
置の要部側面図である。同図において、1は、半導体
で、上面の両側端縁に接続端子であるバンプ2が2列に
複数配列されている。3は、半導体1を水平に載置する
半導体受け台で、半導体1を載置する上端面は平坦状
で、かつ水平に保持されている。15は、絶縁テープ1
6上に形成されたリード、17は、前記バンプ2にリー
ド15を接合するために上下方向に垂直に往復移動可能
なボンディングツールである。
2. Description of the Related Art FIG. 2 is a side view of essential parts of a general conventional bonding apparatus. In the figure, reference numeral 1 denotes a semiconductor, and a plurality of bumps 2 serving as connection terminals are arranged in two rows on both side edges of the upper surface. Reference numeral 3 denotes a semiconductor pedestal on which the semiconductor 1 is mounted horizontally, and an upper end surface on which the semiconductor 1 is mounted is flat and held horizontally. 15 is an insulating tape 1
Leads 17 formed on 6 are reciprocating vertically bonding tools for joining the leads 15 to the bumps 2.

【0003】次に、このような構成のボンディング装置
におけるボンディング方法の動作を説明する。まず、半
導体受け台3に、図示しない半導体給材機構によって半
導体1を給材して所定の中央位置に載置する。次に、テ
ープ16が貼着されたリード15の先端を、図示しない
位置決め手段によって前記半導体1のバンプ2上に位置
決め載置する。最後に、ボンディングツール17を上方
より、下降させて先端部分で前記リード15を加圧およ
び加熱し、これにより、リード15を半導体1に接合し
ている。
Next, the operation of the bonding method in the bonding apparatus having such a structure will be described. First, the semiconductor 1 is fed to the semiconductor cradle 3 by a semiconductor feeding mechanism (not shown) and placed at a predetermined center position. Next, the tips of the leads 15 to which the tape 16 is attached are positioned and mounted on the bumps 2 of the semiconductor 1 by a positioning means (not shown). Finally, the bonding tool 17 is lowered from above to pressurize and heat the lead 15 at the tip portion, thereby joining the lead 15 to the semiconductor 1.

【0004】[0004]

【発明が解決しようとする課題】従来のボンディング装
置およびボンディング方法は以上のように構成されてい
るので、半導体1の複数のバンプ2に接合される複数の
リード15をバンプ2または半導体1に均一に加圧する
必要があり、このため、半導体受け台3が傾いていた
り、半導体受け台3の上端面に水平度がでていなかった
り、あるいはリード15の半導体受け台3での載置状態
が悪いと、リード15とバンプ2間との間に平行度がで
ず、これによってボンディング状態に不均一が生じると
いった問題点があった。また、ボンディングする際にボ
ンディングツール自体でリードを半導体に加圧する必要
があるため、ボンディングツールの使用機種が限定さ
れ、このため、比較的ボンディング精度の高い非接触型
のレーザ機器を使用できない欠点があった。本発明は、
上記した従来の問題点あるいは欠点に鑑みてなされたも
のであり、その目的とするところは、リードを半導体に
均一に加圧できると共に精度の高いボンディング装置お
よびボンディング方法を提供することにある。
Since the conventional bonding apparatus and bonding method are configured as described above, the plurality of leads 15 bonded to the plurality of bumps 2 of the semiconductor 1 are evenly formed on the bumps 2 or the semiconductor 1. Therefore, the semiconductor pedestal 3 is tilted, the upper end surface of the semiconductor pedestal 3 is not level, or the lead 15 is not properly placed on the semiconductor pedestal 3. However, there is a problem in that the parallelism between the leads 15 and the bumps 2 does not appear, and thus the bonding state becomes non-uniform. In addition, since it is necessary to press the leads onto the semiconductor by the bonding tool itself during bonding, the type of bonding tool to be used is limited. there were. The present invention is
The present invention has been made in view of the above-mentioned conventional problems or drawbacks, and an object thereof is to provide a bonding apparatus and a bonding method that can press a lead evenly on a semiconductor and have high accuracy.

【0005】[0005]

【課題を解決するための手段】この目的を達成するため
に、本発明に係るボンディング装置は、半導体を半導体
受け台に給材する給材機構と、前記半導体上にリードを
載置し位置決めする位置決め手段と、前記リードを前記
半導体に接合する接合手段とからなり、前記位置決め機
構に前記リードの根元部をクランプする一対の把持部か
らなるクランプ手段を備え、前記一対の把持部の一方を
前記リードの中間部まで延長し、この延長端に前記リー
ドのばね性に抗してこのリードの先端部を前記半導体側
に押圧する押圧突起を設けると共に、前記接合手段とし
てレーザ機器を前記半導体の上方に配置したものであ
る。また、本発明に係るボンディング方法は、半導体を
半導体受け台に給材し、この半導体上にリードを位置決
め載置し、しかるのちにリードを半導体に接合する方法
であって、前記リードの位置決め載置の際にリードの根
元部をクランプすると共に、リードの中間部を押圧して
リードの先端部をリードのばね性に抗して半導体側に押
圧し、しかるのちリードの先端部を上方からの放射熱の
加熱により半導体に接合したものである。
To achieve this object, in a bonding apparatus according to the present invention, a material feeding mechanism for feeding a semiconductor to a semiconductor pedestal and a lead is placed and positioned on the semiconductor. The positioning mechanism includes a joining means for joining the lead to the semiconductor, and the positioning mechanism includes a clamping means including a pair of gripping portions for clamping the root of the lead, and one of the pair of gripping portions is A lead is extended to the middle portion of the lead, and a pressing projection is provided at this extended end to push the tip end of the lead against the semiconductor side against the springiness of the lead. It was placed in. Further, the bonding method according to the present invention is a method for feeding a semiconductor to a semiconductor pedestal, positioning and mounting the leads on the semiconductor, and then bonding the leads to the semiconductor. When mounting, the root part of the lead is clamped, the middle part of the lead is pressed, and the tip part of the lead is pressed against the semiconductor side against the spring property of the lead, and then the tip part of the lead is pressed from above. It is bonded to a semiconductor by heating with radiant heat.

【0006】[0006]

【作用】本発明においては、リードの先端部がリードの
ばね性に抗して半導体側に一応に押圧される。また、ク
ランプ手段で加圧し、しかも加圧部はリードの中間部に
よって行っているので、ボンディングツールでの加圧は
不要となり、しかもボンディング部であるリードの先端
部の上方にはクランプ手段が存在しない。
In the present invention, the tips of the leads are temporarily pressed against the semiconductor side against the springiness of the leads. Further, since the pressure is applied by the clamp means and the pressurizing part is performed by the middle part of the lead, the pressurization by the bonding tool is unnecessary, and the clamp means is present above the tip part of the lead which is the bonding part. do not do.

【0007】[0007]

【実施例】以下、本発明の一実施例を図に基づいて説明
する。図1は、本発明に係るボンディング装置の要部側
面図である。同図において、リード9のバンプ2への位
置決め載置機構には、リード9の根元部をクランプする
上下一対の把持部6、7を有するクランプ手段5が備え
られている。そして、上方の把持部7は、下方の把持部
6よりも先端がリード9の中間部付近まで延長されて、
この延長端に下方に突出した突起7aが設けられてい
る。10は、リード9とバンプ2との接合手段でボンデ
ィング部分であるバンプ2の上方に配置された、図示を
省略した加熱用のレーザ機器からの熱線である。
An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a side view of a main part of a bonding apparatus according to the present invention. In the figure, the positioning and mounting mechanism of the lead 9 on the bump 2 is provided with a clamp means 5 having a pair of upper and lower grips 6 and 7 for clamping the root of the lead 9. The tip of the upper grip portion 7 is extended to the vicinity of the middle portion of the lead 9 as compared with the lower grip portion 6,
A protrusion 7a protruding downward is provided at this extension end. Reference numeral 10 denotes a heat ray from a laser device for heating (not shown) which is arranged above the bump 2 which is a bonding portion by a joining means of the lead 9 and the bump 2.

【0008】以下、動作を説明する。半導体受け台3に
半導体1を載置し、しかるのち、クランプ手段5の両把
持部6、7とでリード9の根元部をクランプして、図示
しない位置決め載置手段でリード9の先端を半導体1の
バンプ2上に位置決め載置する。このとき、把持部7の
突起7aがリード9の先端部をリード9のばね性に抗し
て強制的に押圧しているので、複数のリード9は半導体
1の複数のバンプ2に、一応に平坦状態で均一に押圧さ
れる。しかるのち、レーザ機器からの熱線10によって
リード9の先端部とバンプ2とを接合する。
The operation will be described below. The semiconductor 1 is placed on the semiconductor cradle 3, and thereafter, the root portions of the leads 9 are clamped by the both gripping portions 6 and 7 of the clamp means 5, and the tips of the leads 9 are placed on the semiconductor by the positioning and placing means (not shown). Positioning and mounting on the bump 2 of 1. At this time, the protrusions 7a of the grip portion 7 forcibly press the tip portions of the leads 9 against the springiness of the leads 9, so that the leads 9 are tentatively applied to the bumps 2 of the semiconductor 1. It is pressed uniformly in a flat state. Then, the tip end of the lead 9 and the bump 2 are joined by the heat wire 10 from the laser device.

【0009】[0009]

【発明の効果】以上説明したように本発明によれば、リ
ードを半導体に位置決めする際に、リードの根元部をク
ランプすると共に、リードの中間部を押圧してリードの
先端部をリードのばね性に抗して半導体側に押圧したの
で、複数のリードを半導体の接合部に均一に加圧でき、
このためリードの接触不良を防止できる。また、ボンデ
ィングツールで接合する以前に既にリードが加圧され、
しかもボンディング部であるリードの先端部の上方には
クランプ手段が存在していないので、ボンディングツー
ルは、リードに対して必ずしも加圧および接触を必要と
せず、このため、ボンディングツールとしてボンディン
グ精度の高いレーザ機器を使用できる効果がある。
As described above, according to the present invention, when the lead is positioned on the semiconductor, the root portion of the lead is clamped and the middle portion of the lead is pressed so that the tip end portion of the lead is held by the spring of the lead. Since it pressed against the semiconductor side against the property, it is possible to uniformly press multiple leads to the semiconductor junction,
Therefore, it is possible to prevent the contact failure of the leads. Also, the lead is already pressed before joining with the bonding tool,
Moreover, since the clamp means is not present above the tip of the lead, which is the bonding portion, the bonding tool does not necessarily need to apply pressure and contact to the lead. There is an effect that laser equipment can be used.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係るボンディング装置の要部側面図で
ある。
FIG. 1 is a side view of a main part of a bonding apparatus according to the present invention.

【図2】従来のボンディング装置の要部側面図である。FIG. 2 is a side view of a main part of a conventional bonding apparatus.

【符号の説明】[Explanation of symbols]

1 半導体 2 バンプ 3 半導体受け台 5 クランプ手段 7a 突起 9 リード 10 熱線 DESCRIPTION OF SYMBOLS 1 Semiconductor 2 Bump 3 Semiconductor pedestal 5 Clamping means 7a Protrusion 9 Lead 10 Hot wire

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体を半導体受け台に給材する給材機
構と、前記半導体上にリードを載置し位置決めする位置
決め手段と、前記リードを前記半導体に接合する接合手
段とからなるボンディング装置において、前記位置決め
機構に前記リードの根元部をクランプする一対の把持部
からなるクランプ手段を備え、前記一対の把持部の一方
を前記リードの中間部まで延長し、この延長端に前記リ
ードのばね性に抗してこのリードの先端部を前記半導体
側に押圧する押圧突起を設けると共に、前記接合手段と
してレーザ機器を前記半導体の上方に配置したことを特
徴とするボンディング装置。
1. A bonding apparatus comprising a material supplying mechanism for supplying a semiconductor to a semiconductor pedestal, a positioning means for mounting and positioning a lead on the semiconductor, and a bonding means for bonding the lead to the semiconductor. The positioning mechanism is provided with a clamp means composed of a pair of grips for clamping the root of the lead, and one of the pair of grips is extended to an intermediate part of the lead, and the spring property of the lead is provided at the extension end. The bonding apparatus is characterized in that a pressing projection for pressing the tip end portion of the lead against the semiconductor is provided against the above, and a laser device is arranged above the semiconductor as the joining means.
【請求項2】 半導体を半導体受け台に給材し、この半
導体上にリードを位置決め載置し、しかるのちにリード
を半導体に接合するボンディング方法において、前記リ
ードの位置決め載置の際にリードの根元部をクランプす
ると共に、リードの中間部を押圧してリードの先端部を
リードのばね性に抗して半導体側に押圧し、しかるのち
リードの先端部を上方からの放射熱の加熱により半導体
に接合したことを特徴とするボンディング方法。
2. A bonding method in which a semiconductor is supplied to a semiconductor pedestal, leads are positioned and mounted on the semiconductor, and then the leads are bonded to the semiconductor. In the bonding method, the leads are positioned and mounted. While clamping the root part, pressing the middle part of the lead to press the tip part of the lead against the semiconductor side against the spring property of the lead, and then the tip part of the lead is heated by radiant heat from above. A bonding method characterized by being bonded to.
JP27091191A 1991-10-18 1991-10-18 Bonding device and its method Pending JPH05109831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27091191A JPH05109831A (en) 1991-10-18 1991-10-18 Bonding device and its method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27091191A JPH05109831A (en) 1991-10-18 1991-10-18 Bonding device and its method

Publications (1)

Publication Number Publication Date
JPH05109831A true JPH05109831A (en) 1993-04-30

Family

ID=17492707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27091191A Pending JPH05109831A (en) 1991-10-18 1991-10-18 Bonding device and its method

Country Status (1)

Country Link
JP (1) JPH05109831A (en)

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