JPH05106033A - Thin film forming apparatus - Google Patents

Abstract

PURPOSE:To provide a thin film forming apparatus capable of forming a thin carbon film and a thin silicon film having superior film structure with excellent adhesive strength even on a substrate having low heat resistance. CONSTITUTION:This apparatus has a vacuum tank 1 for film formation, where thin film forming materials and hydrogen gas are introduced, a substrate holder 13 disposed in the vacuum tank and used for holding a substrate 100, a means 13' of heating the substrate holder 13, means 10, 20 of supplying the thin film forming materials into the vacuum tank, and means 5, 14, 17 of supplying hydrogen atoms to the vicinity of the substrate. Further, the apparatus is constituted and the means are taken so that film formation can be done while supplying the hydrogen atoms in high concentration to the vicinity of the substrate. By supplying the hydrogen atoms in high concentration to the vicinity of the surface of the substrate, the decomposition reaction of the materials can be accelerated at the surface of the substrate and, as a result, the formation at low temp., of the thin carbon film and the thin silicon film having superior film structure can be facilitated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus capable of forming a carbon thin film or a silicon thin film with good quality at low temperature.

[0002]

2. Description of the Related Art The applicant of the present invention has previously proposed, as a thin film forming apparatus for forming various thin films on a thin film forming substrate, a grid between an opposing electrode for holding the substrate facing the evaporation source and the evaporation source. A device for arranging a filament for generating thermoelectrons between the grid and the evaporation source and making the grid a positive potential with respect to the filament to form a thin film has been proposed (see Japanese Patent Publication No. 1-53351). .. In this device, the evaporation material evaporated from the evaporation source is first ionized by thermoelectrons from the filament. When the ionized vaporized substance passes through the grid in this way, it is accelerated by the action of the electric field from the grid toward the counter electrode and collides with the substrate,
A film with good adhesion is formed. In addition to this, various means such as a CVD method and a PVD method have been conventionally proposed as a means for forming a carbon thin film or a silicon thin film on a thin film forming substrate, and the methods are extremely diverse. ..

[0003]

However, in the conventional thin film forming apparatus, the adhesion of the formed film to the substrate is weak, and the film structure of good quality (crystallinity, electrical characteristics,
In order to form a carbon thin film or a silicon thin film having hardness, etc., it is necessary to raise the thin film forming temperature (substrate temperature), and there are problems such as difficulty in forming a film on a substrate having low heat resistance. It was The present invention has been made in view of the above circumstances, the reactivity is higher than that of a conventional apparatus, film formation is possible at a relatively low temperature, a carbon thin film or a silicon thin film having a good film structure, An object of the present invention is to provide a novel thin film forming apparatus capable of forming a film with good adhesion even on a substrate having low heat resistance.

[0004]

In order to achieve the above object, the thin film forming apparatus according to claim 1 is a thin film forming apparatus for forming a carbon thin film or a silicon thin film, and a thin film forming material and hydrogen gas are introduced. It has a film forming vacuum tank, a substrate holder arranged in the vacuum tank for holding a thin film forming substrate, means for heating the thin film forming substrate, and means for supplying a thin film forming material into the vacuum tank. In the vicinity of the thin film formation substrate, however, an apparatus configuration and means are provided so that film formation can be performed while supplying hydrogen atoms at a high concentration. The thin film forming apparatus according to claim 2, wherein the thin film forming apparatus has a means for supplying hydrogen gas in the vicinity of the thin film forming substrate as a method for supplying a high concentration of hydrogen atoms in the vicinity of the thin film forming substrate, and laser irradiation is performed. Alternatively, the hydrogen atom is dissociated by irradiation with a mercury lamp or the like to increase the concentration of hydrogen atoms in the vicinity of the thin film formation substrate. In the thin film forming apparatus of claim 3, in the thin film forming apparatus of claim 2, in order to efficiently perform hydrogen dissociation by laser irradiation, a total reflection mirror is installed near the surface of the thin film forming substrate to improve irradiation efficiency. It is characterized by

According to a fourth aspect of the thin film forming apparatus of the first aspect, as a method for supplying a high concentration of hydrogen atoms in the vicinity of the thin film forming substrate, a thin film forming apparatus may be provided in front of or on the side surface of the thin film forming substrate. The feature is that a hydrogen atom supply unit is installed. The thin film forming apparatus according to claim 5 is the thin film forming apparatus according to claim 4, in which a hydrogen filament for dissociating hydrogen is installed in the hydrogen atom supply unit so that a high pressure is applied to the film forming vacuum tank. Is introduced into the hydrogen atom supply unit, and the injection hole of the hydrogen atom supply unit is formed into a nozzle shape so that hydrogen atoms are efficiently injected onto the surface of the thin film formation substrate. The thin film forming apparatus according to claim 6 is characterized in that, in the thin film forming apparatus according to claim 5, the hot filament in the hydrogen atom supply part is set to a negative potential with respect to the inner wall of the hydrogen atom supply part main body to promote hydrogen dissociation. To do. In the thin film forming apparatus according to claim 7, in the thin film forming apparatus according to claim 5 or 6, laser light is radiated to a portion in the hydrogen atom supply portion near the hot filament,
It is characterized by promoting hydrogen dissociation.

In the thin film forming apparatus of the eighth aspect, a film forming vacuum tank into which an active gas or an inert gas or a mixed gas of both of them is introduced, and a vapor supplied from outside the vacuum through a material supply passage provided in the vacuum tank. Alternatively, a material supply unit capable of spraying a mist-like thin film forming material to the substrate with good directionality and uniformity, and a thin film formation substrate provided so as to face the material supply unit in the vacuum chamber. A holding counter electrode, a grid that is provided between the material supply unit and the counter electrode in the vacuum tank and allows a thin film forming material to pass therethrough, and is provided between the grid and the material supply unit in the vacuum tank. To generate a thermoelectron, a means for heating the thin film forming substrate, a potential means for making the grid a positive potential with respect to the filament, and a predetermined potential distribution in the vacuum chamber. And a conductive means for electrically connecting the inside of the vacuum chamber and the power supply means to each other, and forming a film while supplying a high concentration of hydrogen atoms in the vicinity of the surface of the thin film formation substrate. It is characterized in that a device configuration and means for performing the above are adopted.

[0007]

In the thin film forming apparatus of the present invention, since the apparatus structure and means are adopted so that film formation can be performed while supplying high concentration of hydrogen atoms in the vicinity of the surface of the thin film forming substrate, The hydrogen atom assist can accelerate the decomposition reaction of the material, and enables the low-temperature formation of carbon thin films and silicon thin films having excellent crystallinity and electrical properties, which have been considered difficult in the past.

[0008]

EXAMPLES The structure and operation of the thin film forming apparatus of the present invention will be described more specifically below. An apparatus for forming a carbon thin film and a silicon thin film according to a first aspect includes a film forming vacuum tank, a substrate holder, a substrate heating unit, a material supply unit, and a hydrogen atom supply unit. A reactive gas, which is a material, and a hydrogen gas for accelerating the reaction are introduced into the film forming vacuum chamber. The substrate holder is adapted to hold a thin film formation substrate (hereinafter referred to as a substrate),
It is arranged in the film forming vacuum tank. The substrate heating means is a means for electrically heating or indirectly heating the substrate, and is appropriately used depending on the film formation situation. The material supplying means is a means for quantitatively and stably supplying the reactive gas as a material substance into the film forming vacuum tank, and various methods such as shower discharge and nozzle injection are used according to the film forming situation. The hydrogen atom supply means is a means for supplying high concentration of hydrogen atoms near the substrate, and the hydrogen atoms effectively contribute to the decomposition reaction of the material.
Therefore, when the vapor deposition process is performed in this thin film forming apparatus, the decomposition reaction of the material is promoted by the hydrogen atom assist in the vicinity of the substrate surface, so that the low temperature formation of carbon and silicon thin films having excellent crystallinity and electrical characteristics is possible. It will be even easier.

According to a second aspect of the present invention, there is provided a thin film forming apparatus in which the hydrogen gas is injected onto the surface of the substrate as a method for supplying a high concentration of hydrogen atoms near the surface of the substrate.
By dissociating hydrogen by laser irradiation, mercury lamp irradiation, etc., the concentration of hydrogen atoms near the substrate is increased.
As a result, the decomposition reaction of the material by hydrogen atom assist in the vicinity of the substrate surface is further promoted, so that low-temperature formation of carbon and silicon thin films having excellent crystallinity and electrical characteristics can be achieved.
It will be even easier.

Next, referring to FIG. 1 as an embodiment of the thin film forming apparatus according to claims 1 and 2, the structure and operation will be described. Figure 1
Reference numeral 1 indicates a film forming vacuum chamber. Although not shown in FIG. 1, a door-type lid for performing work inside the vacuum chamber is integrated with a side surface of the vacuum chamber 1 through packing. The hole 1A provided in the vacuum chamber 1 is connected to an exhaust system (not shown). The material supply unit 10 is supported by the material supply passage 20 and can supply the material substance from the outside of the vacuum chamber. The material supply unit 10 includes a plurality of small hole nozzles 10a and a heater 10.
b, the material can be emitted toward the substrate with desired kinetic energy in a well-oriented and uniform manner. Although nozzle injection is used in the example of FIG. 1, a known gas introduction method may be used and the present invention is not limited to this.

The substrate 100 is held on the substrate holder 13 by a suitable method on the surface facing the material supply unit 10. The substrate heater 13 'is used for heating the substrate and supplies electric power from outside the vacuum chamber, but is omitted in FIG. 1 for simplicity. Hydrogen gas supply unit 14
Is a means for supplying hydrogen gas from the outside of the vacuum chamber to the surface of the substrate by a known appropriate method as indicated by reference numeral 5, and in the example of FIG. Quartz glass is attached to a window 16 provided on the side surface of the vacuum chamber 1, and a laser beam of several eV or a mercury lamp or the like can be irradiated from the window 16 toward the substrate or the substrate surface. ing. Note that the laser light from the laser light source 17 is periodically scanned so as to cover the area of the substrate.

The hydrogen gas supply unit 14, the quartz window 16, and the laser light source 17 are means (hydrogen atom supply means) for dissociating hydrogen in the vicinity of the substrate surface to increase the hydrogen atom concentration, and the hydrogen atoms are material substances. Accelerate the decomposition reaction of. Therefore, when performing the vapor deposition process with this thin film forming apparatus,
Since the decomposition reaction of the material is promoted by the assistance of hydrogen atoms near the surface of the substrate, the low temperature formation of the carbon thin film and the silicon thin film, which are excellent in crystallinity and electrical characteristics, becomes easier. For example, as a material substance, C ₂ H ₂ or CH
_{If 4} is used, a good carbon thin film or diamond thin film can be formed even on a substrate at a relatively low temperature, and if SiH ₄ is used, a good silicon thin film can be formed.

Next, in the thin film forming apparatus of the third aspect, in the thin film forming apparatus of the second aspect, in order to efficiently perform hydrogen dissociation by laser irradiation, a reflection mirror is installed in front of or on the side surface of the substrate. This is intended to improve the irradiation efficiency. In this apparatus, except for the laser irradiation and the total reflection mirror portion, the structure and operation are the same as those in claim 2, so only the portion near the substrate is shown in FIG. Figure 2 (a)
1 is an example in which a cylindrical total reflection mirror 18 is arranged near the surface of the substrate, and the total reflection mirror 18 confines the laser light near the surface of the substrate 100 and effectively uses the power of the laser light. The situation is shown in FIG. This device is more advantageous than the device of claim 2 in that not only the power of the laser light is effectively used by the mirror 18, but also the scanning of the laser light is not required. The mirror 18 has a cylindrical shape in the example of FIG.
The shape may be a polygonal tubular shape or the like, and is appropriately determined according to the shape of the substrate and the installation condition.

Next, a thin film forming apparatus according to a fourth aspect is the thin film forming apparatus according to the first aspect, wherein as a method for supplying a high concentration of hydrogen atoms near the substrate surface, a hydrogen atom supply unit is provided in front of or on the side surface of the substrate surface. Is installed. Hereinafter, the configuration and operation will be described with reference to FIG. 3 as an example of the above apparatus. In FIG. 3, reference numeral 1 indicates a film forming vacuum chamber. Although not shown in FIG. 3, a door-type lid for performing work inside the vacuum chamber is integrated with the side surface of the vacuum chamber 1 through packing. The hole 1A provided in the vacuum chamber 1 is connected to an exhaust system (not shown). The material supply unit 10 is supported by the material supply passage 20 and can supply the material substance from the outside of the vacuum chamber. The material supply unit 10 has a plurality of small hole nozzles 10a and a heater 10b, and can discharge the material substance with desired kinetic energy to the substrate uniformly and with good directionality. Although nozzle injection is used in the example of FIG. 3, a known gas introduction method may be used and the present invention is not limited to this.

The substrate 100 is held by the substrate holder 13 on the surface facing the material supply unit 10 by an appropriate method. The substrate heater 13 'is used for heating the substrate and supplies electric power from outside the vacuum chamber, but is omitted in FIG. 3 for simplicity. Hydrogen atom supply unit 15
Is supplied with hydrogen gas from the outside of the vacuum chamber by a known appropriate method as indicated by reference numeral 5, and hydrogen atoms are discharged from the discharge port toward the vicinity of the substrate surface. Accelerates the decomposition reaction of the material. Therefore, when the vapor deposition process is performed by this thin film forming apparatus, the decomposition reaction of the material is promoted by the hydrogen atom assist in the vicinity of the substrate surface. , Became even easier. For example, as the material substance, C ₂ H ₂ or CH ₄
Can be used to form a good quality carbon thin film or diamond thin film even on a substrate at a relatively low temperature, and SiH ₄ can be used to form a good quality silicon thin film.

Next, a thin film forming apparatus according to a fifth aspect of the present invention is the thin film forming apparatus according to the fourth aspect, in which a hydrogen filament for dissociating hydrogen is installed in the hydrogen atom supply unit and a high pressure is applied to the film forming vacuum chamber. As described above, hydrogen gas is introduced into the hydrogen atom supply part, and the injection hole of the hydrogen atom supply part is formed into a nozzle shape so that hydrogen atoms are efficiently injected onto the substrate surface. This device has the same structure except the hydrogen atom supply unit.
Since the action is the same as that of claim 4, only the hydrogen atom supply part is shown in FIG. In FIG. 4, the hot filament 15a in the hydrogen atom supply unit 15 is for thermal dissociation of hydrogen, and
It is installed near 5b. Further, the injection hole 15b of the hydrogen atom supply unit 15 has a nozzle shape so that hydrogen atoms can be efficiently injected onto the substrate surface. A part of the hydrogen gas introduced into the hydrogen atom supply unit having such a configuration is dissociated when passing through the hot filament 15a and becomes hydrogen atoms, which are efficiently released from the injection holes 15b toward the substrate. ..

Next, the thin film forming apparatus of claim 6 is the thin film forming apparatus of claim 5, wherein the hot filament in the hydrogen atom supply part is set to a negative potential with respect to the inner wall of the hydrogen atom supply part main body,
This is one in which hydrogen dissociation is promoted by electron irradiation. This device has the same structure and operation as those of claims 4 and 5 except for the hydrogen atom supply unit, so only the hydrogen atom supply unit is shown in FIG. In FIG. 5, the hot filament 15a in the hydrogen atom supply unit 15 is for thermal dissociation of hydrogen and is installed near the injection hole 15b. In the case of this device, the hot filament 15
DC power supply 1 between a and the inner wall of the main body of the hydrogen atom supply unit 15
5c is connected so that the potential of the hot filament 15a is set to a negative potential with respect to the inner wall of the main body of the hydrogen atom supply unit, and thermoelectrons from the hot filament 15a are accelerated toward the inner wall of the main body to further promote hydrogen dissociation. It has become. Further, the injection hole 15b of the hydrogen atom supply unit 15 has a nozzle shape so that hydrogen atoms can be efficiently injected onto the substrate surface. A part of the hydrogen gas introduced into the hydrogen atom supply unit having such a configuration is dissociated when passing through the hot filament 15a and becomes hydrogen atoms, which are efficiently released from the injection holes 15b toward the substrate. ..

Next, in the thin film forming apparatus of claim 7, in the thin film forming apparatus of claim 5 or 6, laser irradiation is applied to a portion in the vicinity of the hot filament in the hydrogen atom supply part to accelerate hydrogen dissociation. It is a thing. This apparatus is constructed and operated except for the hydrogen atom supply section.
Therefore, only the hydrogen atom supply unit is shown in FIG. Figure 6
In the hydrogen atom supply unit 15, the hot filament 15
a is for thermal dissociation of hydrogen and is installed in the vicinity of the injection hole 15b. The laser light from the laser 17 light source is irradiated from the outside of the vacuum chamber through the quartz window 16 and the quartz glass portion 15d of the hydrogen atom supply unit 15 to the vicinity of the hot filament 15a, and is used for promoting hydrogen dissociation. In the case of this device, the inner wall of the hydrogen atom supply part is made into a reflection mirror so that the laser light can be confined inside and used efficiently. Further, the injection hole 15b of the hydrogen atom supply unit 15
Has a nozzle shape so that hydrogen atoms can be efficiently injected onto the substrate surface. The hydrogen gas introduced into the hydrogen atom supply unit having such a configuration is partially dissociated into hydrogen atoms in the hydrogen atom supply unit by thermal radiation of the hot filament 15a and laser irradiation from the laser light source 17. It is efficiently discharged from the injection hole 15b toward the substrate.

Next, the thin film forming apparatus according to the present invention comprises a film forming vacuum chamber, a material supplying section, a counter electrode, a grid, a filament, a hydrogen atom supplying means, a power supply means, and a conducting means. Have. An active gas, an inert gas, or a mixed gas of both of them is introduced into the film forming vacuum chamber, and a material supply unit, a counter electrode, a grid, a filament, and hydrogen as a hydrogen atom supply means are used. The atom supply unit and the like are arranged in this vacuum chamber. The counter electrode and the material supply unit are arranged so as to face each other, and the counter electrode also serves as a substrate holder and holds the substrate on the side facing the material supply unit. The material supply unit is provided with a plurality of small-diameter nozzles as material substance discharge holes on the surface facing the counter electrode, and a heater for heating the material substance is attached, so that the pressure difference between the inside and outside of the material supply unit is It is adjustable so that the material substance can be jetted to the substrate in a well-directed and uniform manner with appropriate kinetic energy.

The grid is a material which allows the material to pass therethrough, and is arranged between the material supply section and the counter electrode, and has a positive potential with respect to the filament. Therefore, the electric field generated is directed from the grid to the filament. The filament supplies thermoelectrons and is arranged between the material supply section and the grid. The hydrogen atom supply means is a means for supplying a high concentration of hydrogen atoms in the vicinity of the substrate, and the hydrogen atom supply part is installed in front of or on the side surface of the substrate and is one method of the hydrogen atom supply means. The power supply means is a means for realizing a predetermined electrical state in the vacuum chamber, and the power supply means and the interior of the vacuum chamber are electrically connected by a conductive means.

The structure and operation of the thin film forming apparatus according to the eighth aspect of the present invention will be described below with reference to FIG. In FIG. 7, reference numeral 1 denotes a film forming vacuum tank, and although not shown in FIG. 7, a side surface of the vacuum tank 1 is used for performing work inside the vacuum tank through packing. Door type lid is integrated. The hole 1A provided in the vacuum chamber 1 is connected to an exhaust system (not shown). An active gas and / or an inert gas can be introduced into the internal space of the film forming vacuum chamber 1 by a known appropriate method as indicated by reference numeral 4. In the film forming vacuum tank 1, the electrodes 21a, 21b, 22 and 23 also serving as a support, the material supply passage 20, and the hydrogen gas supply passage are provided while maintaining the internal airtightness and the electrical insulation. 24 are provided, and these electrodes 21a, 21b, 22, 23 and the material supply path 2 are provided.
The 0 and the hydrogen gas supply path 24 electrically connect the inside and the outside of the vacuum chamber, and constitute a conductive means together with other wiring tools.

The material supply unit 10 is supported by the material supply passage 20 and can supply the material substance from the outside of the vacuum chamber. In addition, the material supply unit 10 has a plurality of small hole nozzles 10a and a heater 10b, and the material is uniformly directed with desired kinetic energy in the substrate 1
It can be released toward 00. The filament 11 is for generating thermoelectrons, and can cover the spread of the vaporized substance. An AC power supply 31 is connected to the pair of electrodes 21a and 21b supporting the filament 11, but a DC power supply may be used instead of the AC power supply 31, and in that case, the positive and negative directions may be either direction. .. The electrode 22 supporting the grid 12 is a DC voltage power source 3
2 is connected to the positive electrode side, and the negative electrode side of the DC voltage power supply 32 is connected to the electrode 21a. The grid 12 is shaped so as to allow the vaporized substance to pass to the counter electrode 13 side, but in this example, it has a mesh shape.

The electrode 23 supporting the counter electrode 13 is directly connected to the electrode 21a in the example of FIG. 7, but a DC power supply may be put in the meantime to bias the counter electrode 13. The counter electrode 13 also serves as a substrate holder, and the substrate 100 is held on the surface facing the material supply unit 10 by an appropriate method. The substrate heater 13 ′ installed on the counter electrode 13 is used for heating the substrate 100,
Electric power is supplied from outside the vacuum chamber, but illustration is omitted in FIG. 7 for simplicity. The hydrogen atom supply unit 15 is a means for supplying hydrogen atoms to the vicinity of the substrate surface, is supported by the hydrogen gas supply passage 24, and dissociates the hydrogen gas supplied from the outside of the vacuum chamber to release it to the vicinity of the substrate. ing. As the hydrogen atom supply means, the hydrogen atom supply means according to any one of claims 1 to 7 can be appropriately used depending on the apparatus shape, film forming conditions and the like. In the example of FIG. 7, the material supply passage 20
Are electrically connected to the electrodes 21a, but this is not necessary. Further, the grounding in the figure is not always necessary.

Now, by the above power supply means, the grid 1
2 has a positive potential with respect to the filament 11, and the electric field goes from the grid 12 to the filament 11. In addition, FIG.
When the counter electrode 13 is set to have a negative potential with respect to the grid 12 as in the above example, an electric field is also generated from the grid 12 to the counter electrode 13. Therefore, in this thin film forming apparatus, a stable plasma state can be created between the grid and the filament and between the grid and the counter electrode by adjusting the filament heating power supply 31 and the grid DC voltage power supply 32. still,
Actually, the electrical connection includes switches forming a part of the conductive means, and the vapor deposition process is executed by operating these switches, but these switches are not shown.

Now, when the vapor deposition process is executed in the thin film forming apparatus configured as described above, the material substance released from the material supply unit 10 is ionized in the plasma and accelerated toward the substrate 100 by the electric field. The effect of the kinetic energy of the ion particles and the hydrogen atom supply unit 1
The effect of accelerating the decomposition reaction of the material substance by the assist of hydrogen atoms near the substrate surface supplied from
It is possible to obtain a carbon thin film and a silicon thin film having excellent adhesion to 0 and good crystallinity at a lower temperature. For example,
Ar or the like is selected as the introduction gas, hydrogen atoms are supplied to the vicinity of the substrate by the hydrogen atom supply unit 15, and the pressure in the vacuum chamber 1 is adjusted to 10 to 1/10 ² Pa. If C ₂ H ₂ or CH ₄ is used as the material, a good quality carbon thin film or diamond thin film can be formed even on a substrate at a relatively low temperature, and if SiH ₄ is used as the material, good quality silicon can be obtained. A thin film can be formed. Similarly, N ₂ and / or Ar is selected as the introduced gas, hydrogen atoms are supplied near the substrate, and SiH ₄ + is used as the material.
If NH ₃ is used, it is possible to form a high quality compound thin film such as a SiN _x thin film.

[0026]

As described above, in the thin film forming apparatus of the present invention, the film forming process can be performed while supplying a high concentration of hydrogen atoms in the vicinity of the substrate surface. The formation of carbon thin film and silicon thin film, which can accelerate the decomposition reaction of substances and which has been considered difficult in the past, with excellent crystallinity and electrical characteristics, gives high film formation temperature (crystallization temperature, reaction temperature). It can be realized without any further and becomes even easier. Therefore, according to the thin film forming apparatus of the present invention, a carbon thin film or a silicon thin film having a good film structure excellent in crystallinity and electrical characteristics can be easily formed with good adhesion even to a substrate having low heat resistance. can do.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a thin film forming apparatus showing one embodiment of claims 1 and 2.

FIG. 2 is a diagram showing one embodiment of claim 3, (a)
Is a side sectional view showing only a portion near the substrate of the thin film forming apparatus,
(B) is a plan view of a portion near the substrate.

FIG. 3 is a schematic configuration diagram of a thin film forming apparatus showing an embodiment of claim 4.

FIG. 4 is a diagram showing an embodiment of claim 5 and is a diagram showing a schematic configuration of a hydrogen atom supply unit of the thin film forming apparatus.

FIG. 5 is a diagram showing an embodiment of claim 6 and is a diagram showing a schematic configuration of a hydrogen atom supply unit of the thin film forming apparatus.

FIG. 6 is a diagram showing an embodiment of claim 7 and is a diagram showing a schematic configuration of a hydrogen atom supply unit of the thin film forming apparatus.

FIG. 7 is a schematic configuration diagram of a thin film forming apparatus showing an embodiment of claim 8.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber for film formation 5 ... Hydrogen gas introduction means 10 ... Material supply part 11 ... Filament 12 ... Grid 13 ... Substrate holder (counter electrode) 13 '... Substrate Heating unit 14 ... Hydrogen gas supply unit 15 ... Hydrogen atom supply unit 16 ... Window 17 ... Laser light source 18 ... Total reflection mirror 20 ... Material supply path 21a, 21b, 22, 23・ ・ ・ Support / electrode 31 ・ ・ ・ Filament heating power supply 32 ・ ・ ・ DC voltage power supply 100 ・ ・ ・ Thin film forming substrate

Claims (8)

[Claims] 1. A thin film forming apparatus for forming a carbon thin film or a silicon thin film, comprising: a film forming vacuum tank into which a thin film forming material and hydrogen gas are introduced; and a thin film forming substrate held in the vacuum tank to hold a thin film forming substrate. And a means for heating the substrate on which the thin film is to be formed and a means for supplying a thin film forming material into the vacuum chamber, and forming a film while supplying a high concentration of hydrogen atoms in the vicinity of the substrate on which the thin film is formed. An apparatus for forming a thin film, characterized in that an apparatus configuration and means for achieving the above are adopted. 2. The thin film forming apparatus according to claim 1, wherein as a method for supplying a high concentration of hydrogen atoms in the vicinity of the thin film forming substrate, means for supplying hydrogen gas in the vicinity of the thin film forming substrate is provided, and laser irradiation is performed. Alternatively, the thin film forming apparatus is characterized in that hydrogen is dissociated by irradiation with a mercury lamp or the like to increase the concentration of hydrogen atoms in the vicinity of the thin film forming substrate. 3. The thin film forming apparatus according to claim 2, wherein in order to efficiently dissociate hydrogen by laser irradiation, a total reflection mirror is installed near the surface of the thin film forming substrate to improve irradiation efficiency. Thin film forming apparatus. 4. The thin film forming apparatus according to claim 1, wherein a method for supplying a high concentration of hydrogen atoms in the vicinity of the thin film forming substrate is to install a hydrogen atom supply unit in front of or on the side surface of the thin film forming substrate. A thin film forming apparatus characterized by the above. 5. The thin film forming apparatus according to claim 4, wherein a hydrogen filament for hydrogen dissociation is installed in the hydrogen atom supply unit, and hydrogen gas is supplied to the film formation vacuum tank so that the hydrogen gas has a high pressure. The thin film forming apparatus is characterized in that it is introduced into the inside of the chamber, and the injection hole of the hydrogen atom supply unit is formed into a nozzle shape so that hydrogen atoms are efficiently injected onto the surface of the thin film forming substrate. 6. The thin film forming apparatus according to claim 5, wherein the hot filament in the hydrogen atom supplying unit is set to a negative potential with respect to the inner wall of the main body of the hydrogen atom supplying unit to promote hydrogen dissociation. .. 7. The thin film forming apparatus according to claim 5 or 6, wherein a portion of the hydrogen atom supplying portion near the hot filament is irradiated with laser light to promote hydrogen dissociation. .. 8. A vacuum tank for film formation into which an active gas or an inert gas or a mixed gas of both of them is introduced, and a thin film formed in the vacuum tank from outside the vacuum to vapor or mist from a material supply passage. A material supply unit capable of spraying a material onto the substrate with good directionality and uniformity; a counter electrode arranged to face the material supply unit in the vacuum chamber and holding a thin film forming substrate; A grid that is provided between the material supply unit and the counter electrode in the vacuum chamber and allows the thin film forming material to pass therethrough; and for thermionic generation that is provided between the grid and the material supply unit in the vacuum chamber. A filament, a means for heating the thin film formation substrate, a potential means for making the grid a positive potential with respect to the filament, and a power supply means for realizing a predetermined potential distribution in the vacuum chamber. An apparatus configuration having conductive means for electrically connecting the inside of the vacuum chamber and the power source means, and capable of performing film formation while supplying a high concentration of hydrogen atoms in the vicinity of the surface of the thin film formation substrate, and A thin film forming apparatus characterized in that a means is taken.