JPH0499269A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- JPH0499269A JPH0499269A JP21099190A JP21099190A JPH0499269A JP H0499269 A JPH0499269 A JP H0499269A JP 21099190 A JP21099190 A JP 21099190A JP 21099190 A JP21099190 A JP 21099190A JP H0499269 A JPH0499269 A JP H0499269A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- temp
- sputtering target
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- 230000006835 compression Effects 0.000 claims abstract description 7
- 238000007906 compression Methods 0.000 claims abstract description 7
- 238000001953 recrystallisation Methods 0.000 claims abstract description 5
- 238000005096 rolling process Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 238000001640 fractional crystallisation Methods 0.000 abstract description 2
- 238000004508 fractional distillation Methods 0.000 abstract description 2
- 230000000977 initiatory effect Effects 0.000 abstract description 2
- 238000007670 refining Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、スパッタリングターゲットに関するものであ
り、詳しくは、材料強度を高めて使用時の軟化変形を阻
止するように改良された高純度アルミニウムより成るス
パッタリングターゲットに関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a sputtering target, and more particularly, it is made of high-purity aluminum that has been improved to increase material strength and prevent softening and deformation during use. The present invention relates to a sputtering target consisting of:
スパッタ法は、イオンをターゲットに照射し、ターゲッ
ト表面の物質と衝突させてこれを蒸発させ、蒸発したタ
ーゲット物質を基板上に沈着させて薄膜を形成させる方
法であり、薄膜形成の分野テ広（用いられている。スパ
ッタ装置は、衝撃イオン源であるイオン化カスまたは放
電プラズマの発生の仕方、印加電源の種類、電極の構造
などにより、二極ＤＣクロー放電型、三極ＤＣり′ロー
放電型、二極ＲＦグロー放電型、イオンビーム型、マク
ネトロン型等に分けられ、用途によって使い分けられて
いる。The sputtering method is a method in which ions are irradiated onto a target, collided with a material on the target surface to evaporate it, and the evaporated target material is deposited on a substrate to form a thin film. Sputtering equipment can be of the two-pole DC claw discharge type or the three-pole DC low discharge type, depending on the method of generating ionized dust or discharge plasma as an impact ion source, the type of applied power, the structure of the electrodes, etc. , bipolar RF glow discharge type, ion beam type, Macnetron type, etc., and are used depending on the purpose.
第２図は、スパッタ装置の一例としてマクネトロン型ス
パッタ装置の構成を模式的に示すものである。薄膜を形
成させる基板（４）及びターゲット（５）は、真空チェ
ンバー（１）内に収容され、ターゲットのスパッタ表面
（９）は、基板の薄膜形成面（１０）と対向させられて
いる。この装置でスパッタリングを行なうには、例えば
、先ず、真空排気口（３）から排気してチェンバー内を
１０−７ｔｏｒｒ程度の高真空にした後、スパッタガス
供給口（２）からスパッタガス（Ａｒなど）を導入して
チェンバー内を１０−”ｔｏｒｒ程度の低圧に保つ。次
に、基板が陽極になり、ターゲットが陰極となるように
電圧をかけると、ターゲット表面から電子が放出され、
これがチェンバー内のスパッタカスと衝突してイオン（
Ａｒ−など）が生成し、これか電場で加速されてターゲ
ットのスパッタ表面に衝突する。この衝突エネルギーに
よってスパッタ表面の原子が放出され、これか基板の薄
膜形成面上に堆積してターゲット物質の薄膜が形成され
る。FIG. 2 schematically shows the configuration of a McNetron type sputtering device as an example of a sputtering device. A substrate (4) on which a thin film is to be formed and a target (5) are housed in a vacuum chamber (1), and the sputtering surface (9) of the target is opposed to the thin film forming surface (10) of the substrate. To perform sputtering with this device, for example, first, the chamber is evacuated from the vacuum exhaust port (3) to create a high vacuum of about 10-7 torr, and then the sputter gas (Ar, etc.) is supplied from the sputter gas supply port (2). ) to keep the chamber at a low pressure of about 10-” torr.Next, when voltage is applied so that the substrate becomes an anode and the target becomes a cathode, electrons are emitted from the target surface.
This collides with the sputtered residue in the chamber and ions (
(Ar-, etc.) is generated, which is accelerated by the electric field and collides with the sputtering surface of the target. This collision energy causes atoms on the sputtering surface to be ejected and deposited on the thin film forming surface of the substrate to form a thin film of the target material.
ターゲット物質としてアルミニウムを使用すれは、アル
ミニウムスパッタリングが行なわれる。When aluminum is used as the target material, aluminum sputtering is performed.
アルミニウムスパッタリンク′の主な用途は、ＩＣやＬ
ＢＩ上の配線である。この場合、先ず、シリコンウェハ
の全面にスパッタリングによりアルミニウム薄膜を形成
し、次いで、該薄膜を回路パターンに従ってエツチング
して回路細線を形成させる。The main uses of aluminum sputter links are IC and L
This is the wiring on BI. In this case, first, a thin aluminum film is formed on the entire surface of a silicon wafer by sputtering, and then the thin film is etched according to a circuit pattern to form thin circuit lines.
なお、第２図中、（６）は磁石、（７）は冷却水入口、
（８）は冷却水出口である。In addition, in Figure 2, (6) is the magnet, (7) is the cooling water inlet,
(8) is a cooling water outlet.
〔発明が解決しようとする問題点〕
しかしながら、純度が９９．９９重量％以上の高純度ア
ルミニウムから成るスパッタリングターゲットは、裏面
から冷却されるにも拘わらす、スパッタリンク時に発生
する熱や熱応力によって変形を起こし、正常なスパッタ
リングができないという問題かある。[Problems to be Solved by the Invention] However, sputtering targets made of high-purity aluminum with a purity of 99.99% by weight or more are cooled from the back side, but due to the heat and thermal stress generated during sputter linking. There is a problem that deformation occurs and normal sputtering cannot be performed.
本発明は、上記実情に鑑みなされたものであり、その目
的は、材料強度を高めて使用時の温度（約２００〜２５
０°Ｃ）における軟化変形を阻止するように改良された
高純度アルミニウムより成るスパッタリングターゲット
の提供にある。The present invention was made in view of the above-mentioned circumstances, and its purpose is to increase the strength of the material so that the temperature during use (approximately 200 to 250
An object of the present invention is to provide a sputtering target made of high-purity aluminum that is improved to prevent softening deformation at 0°C.
すなわち、本発明の要旨は、純度が９９．９９重量％以
上のアルミニウムから成り、再結晶開始温度未満の温度
において、圧延率２０〜６０％の処理を施したことを特
徴とするスパッタリングターゲットに存する。That is, the gist of the present invention resides in a sputtering target made of aluminum with a purity of 99.99% by weight or more and subjected to a rolling reduction treatment of 20 to 60% at a temperature below the recrystallization start temperature. .
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明のスパッタリングターゲットは、純度が９９、９
９重量％以上、好ましくは、９９．９９９重量％以上の
高純度アルミニウムより成る。そして、純度が上記範囲
内であれば、他の合金元素、例えば、Ｓｉ、Ｃｕ等を含
有していてもよい。このような高純度アルミニウムは、
例えは、電解精製、分別結晶、分留なとの方法により得
ることかできる。The sputtering target of the present invention has a purity of 99.9.
It consists of 9% by weight or more, preferably 99.999% by weight or more of high purity aluminum. Further, as long as the purity is within the above range, other alloying elements such as Si, Cu, etc. may be contained. This kind of high-purity aluminum is
For example, it can be obtained by methods such as electrolytic refining, fractional crystallization, and fractional distillation.
本発明のスパンタリンク′ターケットは、上記のような
高純度アルミニウムから成り、再結晶開始温度未満の温
度において、圧延率２０〜６０％の圧縮加工を施してい
ることを特徴とする。The spuntalink target of the present invention is made of the above-mentioned high-purity aluminum and is characterized in that it is compressed at a rolling rate of 20 to 60% at a temperature below the recrystallization initiation temperature.
ここに、圧延率とは、次の式にて定義される概念である
。Here, the rolling rate is a concept defined by the following formula.
圧延率（％）
圧縮加工を施すことにより、材料に加工歪を与えてその
硬度を高める方法は、加工硬化法としてそれ自体公知で
ある。Rolling ratio (%) A method of increasing the hardness of a material by applying processing strain to the material by compression processing is known per se as a work hardening method.
しかしながら、強加工による場合は、高温加熱により加
工歪か除去され高温での硬化は達成されない。However, in the case of strong processing, processing strain is removed by high-temperature heating, and hardening at high temperatures is not achieved.
本発明の意義は、約２００〜２５０°Ｃの温度において
高い硬度を維持するために、圧延率を特定の軽加工の範
囲で規定した点にあり、前記範囲の軽加工の圧縮加工に
より、初めて、上記の目的が達成される。The significance of the present invention is that in order to maintain high hardness at a temperature of about 200 to 250°C, the rolling rate is specified in a specific range of light processing, and for the first time, compression processing of light processing in the above range , the above objectives are achieved.
圧縮加工の方法としては、圧延、鍛造等が挙げられる。Examples of compression processing methods include rolling and forging.
そして、圧縮加工は、熱処理やその他の加工処理を施す
場合には、その後の最終加工段階で施す必要がある。If heat treatment or other processing is to be performed, compression processing must be performed at the subsequent final processing stage.
圧縮加工の温度は、再結晶開始温度未満の温度であれは
特に制限はないが、−船釣には、５０’Ｃ前後以下の温
度であり、通常は室温とされる。The temperature for compression processing is not particularly limited as long as it is below the recrystallization start temperature; however, for boat fishing, the temperature is around 50'C or less, usually room temperature.
本発明のスパッタリングターゲツト材は、上記のように
して得られ、目的とするスパッタ装置に応じた形状（例
えば、円形、長方形、これらの中央部をくり抜いたドー
ナツ形など）に切り出して使用される。そして、２５０
℃において、１５以上の高いピッカス硬度を有する。The sputtering target material of the present invention is obtained as described above, and is used by cutting it into a shape (for example, a circle, a rectangle, a donut shape with a hollowed out center part, etc.) according to the intended sputtering apparatus. And 250
It has a high Pickus hardness of 15 or more at ℃.
以下、本発明を実施例により更に詳細に説明するが、本
発明は、その要旨を超えない限り、以下の実施例に限定
されるものではない。EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to examples, but the present invention is not limited to the following examples unless it exceeds the gist thereof.
実施例１
三層電解法で精製した高純度アルミニウム（純度９９．
９９９５％）のスラブに室温下で圧延処理（圧延率２０
％、３０％、４０％、６０％）を施し、次いて、直径１
７８ｍｍ、厚さ３４ｍｍの円形に切り出して、本発明の
スパッタリングターゲットを得た。Example 1 High purity aluminum (purity 99.
9995%) was rolled at room temperature (rolling rate 20
%, 30%, 40%, 60%), then diameter 1
A sputtering target of the present invention was obtained by cutting out a circle with a size of 78 mm and a thickness of 34 mm.
上記の各ターゲットについて、常温から４００℃の範囲
におけるピッカス硬度を測定し、第１図に示す結果を得
た。The Pickchus hardness of each of the above targets was measured in the range from room temperature to 400° C., and the results shown in FIG. 1 were obtained.
第２図に示すマグネトロンスパッタ装置に、圧延率２０
％のターットを取り付けてシリコンウェハ上基板上への
アルミニウムスパッタリングを行なった結果、ターゲッ
トの変形は起こらず、正常なスパッタリングが実施でき
た。The magnetron sputtering apparatus shown in Fig. 2 has a rolling rate of 20.
As a result of sputtering aluminum onto a silicon wafer substrate with a tart of 50% attached, the target did not deform and normal sputtering could be performed.
比較のために、圧延率を８０％に変更した以外は、上記
と同様にして得たスパッタリングターゲットについて、
ピッカス硬度を測定し、その結果を第１図に併記した。For comparison, sputtering targets obtained in the same manner as above except that the rolling ratio was changed to 80%.
The Picchus hardness was measured and the results are also shown in FIG.
なお、前記と同様にして、上記のターゲットを使用して
スパッタリングを実施したところ、ターゲットが変形し
た。Note that when sputtering was performed using the above target in the same manner as above, the target was deformed.
〔発明の効果コ
以上説明した本発明によれは、特定圧延率の軽加工を施
すことにより、使用時の軟化変形が阻止された高純度ア
ルミニウムターゲットが提供される。[Effects of the Invention] According to the present invention described above, a high-purity aluminum target is provided which is prevented from softening and deforming during use by performing light processing at a specific rolling rate.
第１図は、異なる圧延率の高純度アルミニュウムターゲ
ットについて、温度とピッカス硬度との関係の一例を示
すグラフであり、図中の各％は圧延率を示す。
第２図は、マクネトロン型スパッタ装置の構成を模式的
に示す図である。
１：真空チェンバー ２ニスバッタガス供給口３：真空
排気口 ４：基板
５：ターゲット ６：磁石
７：冷却水人口 ８：冷却水出口FIG. 1 is a graph showing an example of the relationship between temperature and Picchus hardness for high-purity aluminum targets having different rolling ratios, and each percentage in the figure indicates the rolling ratio. FIG. 2 is a diagram schematically showing the configuration of a Macnetron type sputtering apparatus. 1: Vacuum chamber 2 Varnish batter gas supply port 3: Vacuum exhaust port 4: Substrate 5: Target 6: Magnet 7: Cooling water population 8: Cooling water outlet
Claims (1)
成り、再結晶開始温度未満の温度において、圧延率２０
〜６０％の圧縮加工を施したことを特徴とするスパッタ
リングターゲット。(1) Made of aluminum with a purity of 99.99% by weight or more, rolled at a rolling rate of 20 at a temperature below the recrystallization start temperature.
A sputtering target characterized by being subjected to ~60% compression processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21099190A JPH0499269A (en) | 1990-08-08 | 1990-08-08 | Sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21099190A JPH0499269A (en) | 1990-08-08 | 1990-08-08 | Sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499269A true JPH0499269A (en) | 1992-03-31 |
Family
ID=16598516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21099190A Pending JPH0499269A (en) | 1990-08-08 | 1990-08-08 | Sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499269A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1018028A (en) * | 1996-07-05 | 1998-01-20 | Japan Energy Corp | Sputtering target of aluminum or aluminum alloy |
| JP2001316806A (en) * | 2000-05-08 | 2001-11-16 | Hitachi Metals Ltd | High purity al target and wiring film |
-
1990
- 1990-08-08 JP JP21099190A patent/JPH0499269A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1018028A (en) * | 1996-07-05 | 1998-01-20 | Japan Energy Corp | Sputtering target of aluminum or aluminum alloy |
| JP2001316806A (en) * | 2000-05-08 | 2001-11-16 | Hitachi Metals Ltd | High purity al target and wiring film |
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