JPH0498831A - Manufacturing apparatus for semiconductor device - Google Patents

Abstract

PURPOSE:To cut down the wafer heating time thereby increasing the throughput of the wafers by a method wherein the transmitted light without being absorbed into the wafers is reflected on the wafer side again furthermore, a movable reflecting sheet is provided in case of wafer carriage time, etc. CONSTITUTION:A wafer 4 held by a wafer holding base 5 is heated directly by the light emitted from a heating lamp 1 or by the reflected light on a lower part reflecting sheet 3 so as to be controlled at the specific temperature by a temperature controlling thermocouple 2. When the wafer 4 is covered with a substrate and further with an oxide film, the light in longer wavelength is absorbed into the wafer 4. However, the transmitted light by an upper part reflecting sheet 6 is reflected on the wafer 4 side to be absorbed into the wafer 4 again so that the heating time may be cut down to increase the throughput of the wafers 4.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device manufacturing apparatus, and particularly to a wafer heating mechanism of an apparatus for forming a metal thin film on a wafer in vacuum (hereinafter referred to as a sputtering apparatus). Pause.

[Conventional technology]

Conventionally, a heating mechanism of a sputtering apparatus that optically heats a wafer includes a lamp 1 that emits heating light, a thermocouple 2 for temperature control, and a lower reflector plate 3, as shown in the cross-sectional view of FIG. There is. The light emitted from the heating lamp 1 heats the wafer 4 supported on the wafer support 5 either directly or by being reflected by the lower reflector 3, and is controlled by the temperature control thermocouple 2 to reach a desired temperature. The structure is such that

[Problem to be solved by the invention]

The heating mechanism of the conventional sputtering equipment described above has a poor absorption rate for light with long wavelengths (infrared rays, etc.) depending on the type of wafer and its surface condition, and it takes time to heat the wafer to the desired temperature. There was a problem in that the number of sheets processed each time was significantly reduced.

[Means to solve the problem]

The semiconductor device manufacturing apparatus of the present invention has a heating mechanism for optically heating a wafer from below in a vacuum to form a metal thin film by sputtering, and the light that has passed through the upper side without being absorbed by the wafer is transferred to the wafer again. A reflector plate for reflecting the light to the side is provided above the wafer, and this upper reflector plate has a mechanism for moving its position during transport of the wafer.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 shows a sputtering apparatus according to Embodiment 1 of the present invention.
FIG. The wafer 4 supported by the wafer support table is heated by the light emitted from the heating lamp 1, either directly or by the light reflected by the lower reflector plate 3, and is controlled to a desired temperature by the temperature control thermocouple 2.

If the wafer 4 is a silicon substrate further covered with an oxide film, the wafer 4 will absorb and transmit more light with long wavelengths (infrared rays, etc.), making it difficult for the wafer to heat up. . However, the transmitted light is reflected toward the wafer 4 by the upper reflection plate 6 provided above the wafer 4 and absorbed by the wafer 4 again. Therefore, since heating can be performed in about 1/2 to 2/3 of the time required when the upper reflector 6 is not provided, the heating time is shortened and the number of sheets processed per unit time is increased by 1.5 to 2 times.

The upper reflector 6 is moved by the upper reflector drive device 7 when the wafer 4 is being transported and when the upper reflector 6 is not needed.
It can be moved by a heating mechanism. Furthermore, if the upper reflector 6 is made of the same material as the lower reflector 3, the same reflectance can be obtained on the upper and lower sides.

FIG. 2 is a sectional view of Example 2 of the present invention. The basic structure and operation are the same as in Example 1, but since the upper reflector 6 is shaped like a concave portion relative to the wafer 4, the structure allows light to converge more easily than in Example 1, further improving heating efficiency. ing.

〔Effect of the invention〕

As explained above, the present invention reflects light that has passed through the wafer without being absorbed by the wafer again, and has an upper reflector that is movable during wafer transportation, thereby improving the surface condition of the wafer. Since the wafer can be heated during the dead time regardless of the time, it has the effect of increasing the number of wafers processed per unit time6

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of a heating mechanism in a sputtering apparatus according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view of a heating mechanism according to a second embodiment, and FIG. 3 is a cross-sectional view of a conventional heating mechanism. 1... Heating lamp, 2... Thermocouple for temperature control, 3
...lower reflector, 4...wafer, 5...wafer support stand, 6...upper reflector, 7...upper reflector drive device. Figure 1

Claims (1)

[Claims] In a semiconductor device manufacturing apparatus having a heating mechanism for optically heating a wafer from below in a vacuum to form a metal thin film by sputtering, a device for reflecting light that has passed through the wafer back toward the wafer at the top of the heating mechanism. 1. A semiconductor device manufacturing apparatus, characterized in that a reflecting plate is provided.