JPH0493676A - Test method and device for integrated circuit - Google Patents

Abstract

PURPOSE:To perform highly accurate voltage measurement on a measuring pad by measuring an analyzed voltage value compensated by strength of a secondary electron signal to be detected, utilizing the compensated relational equation, and measuring the extent of voltage in the measuring pad. CONSTITUTION:0A shift of an S curve by contamination being accumulated in a measuring pad is divided into a secondary electron signal strength axial shift and an analyzed voltage axial shift and, after compensation for a slice level by the secondary electron signal strength axial shift is carried out in consideration of a variation in secondary electron signal strength in the mini mum analyzed voltage, compensation for a factor in a relational expression between the analyzed voltage 24 by the analyzed voltage axial shift and the measuring pad voltage 83 is made so as to be carried out in consideration of an amount of the analyzed voltage axial shift, so that in regard to the slice level 85 and a factor of a relational expression between the analyzed voltage 86 and the measuring pad voltage 83, highly accurate compensation can be done. Consequently, even in the case where contamination is accumulated on the measuring pad 83, highly accurate voltage measurement for this measuring pad 83 is performable.

Description

[Detailed Description of the Invention] [Summary] Detection of secondary electrons emitted by irradiation of an electron beam to a measurement pad electrically connected to an external bin of an integrated circuit, and an energy analyzer through which the secondary electrons pass. A method for testing integrated circuits through measuring the voltage of a measuring pad using a relational expression between the analysis voltage applied to the measuring pad and the measuring pad voltage. The aim is to compensate for the slice level by the secondary electron signal intensity axial shift of the analysis voltage vs. secondary electron signal intensity curve to account for the change in the secondary electron signal intensity at the minimum analysis voltage. After that, the coefficient of the relational expression between the analysis voltage and the measurement pad voltage is corrected by the shift in the analysis voltage axis direction of the analysis voltage vs. secondary electron signal intensity curve, taking into account the amount of shift in the analysis voltage axis direction. , a slice corrected by the intensity of the detected secondary electron signal.
The analysis voltage when the voltage reaches the level is measured, and the voltage of the measurement pad is measured using the relational expression between the analysis voltage with the coefficient corrected and the measurement pad voltage.

[Industrial Application Field] The present invention relates to a test method and a test device for integrated circuits (hereinafter referred to as LSI), and more specifically, to a measurement pad electrically connected to an external pin of an LSI, which is emitted by irradiation with an electron beam. A method for testing an LSI through detection of secondary electrons, and measurement of voltage on a measurement pad using the relational expression between the analysis voltage applied to an energy analyzer through which the secondary electrons pass and the measurement pad voltage, and this test method This invention relates to a test device for carrying out the test.

[Prior Art] Conventionally, an LSI testing device, the main part of which is shown in FIG. 5, has been proposed.

In the figure, 1 is a lens barrel, 2 is an opening formed in the lens barrel 1, 3 is a substrate made of ceramic that is immovably mounted on the lens barrel 1 so as to close the opening 2, and 4 is a base plate of the substrate 3. A measurement pad is formed on the bottom surface, 5 is a socket fixed to the top surface of the board 3, and 6 is an LSI to be tested mounted on the socket 5.
, 7 is an LSI drive circuit that drives the LSI 6, 8 is a measurement pad voltage measurement means, and this measurement pad voltage measurement means 8 has a parameter table 81 and an analysis voltage
, and the measurement pad voltage ■1.

a, b registration unit 82 for registering the coefficients a, b in the parameter table 81, and the relational expression y
The measurement pad voltage calculation section 83 is provided for calculating the measurement pad voltage (2) using s = a + b × V r.

Here, external pin 9 of LSI 6 is connected to wiring 1 inside the socket.
0 and the measurement pad 4 via wiring 11 in the board 3. Further, all or part of the wiring 11 within the substrate 3 is branched within the substrate 3 and connected to the LSI drive circuit 7 via an external wiring 12. This is to drive the LSI 6 via the external wiring 12. In addition, L
Reference phase voltage data, strobe signals, etc. are supplied from the SI drive circuit 7 to the measurement pad voltage measuring means 8.
Voltage data of the measurement pad 4 and the like are supplied from the measurement pad voltage measuring means 8 to the LSI drive circuit 7.

In addition, 13 is an exhaust pump for exhausting the inside of the lens barrel 1.]
4 is an electron gun that generates an electron beam, 15 is an electron beam generated from the electron gun 14, and 16.17 is an electron beam 15.
18 is an electron beam pulse gate that chops the electron beam 15 and forms it into a pulse, a so-called EB pulse gate; 19 is an EB pulse gate driver that drives the EB pulse gate 18, a so-called gate driver. , this gate driver 19 is configured to drive the EB pulse gate 18 based on the EB pulse generation phase control signal supplied from the measurement pad voltage measuring means 8.

Further, 20 is a deflection coil for deflecting the electron beam 15, and 21 is a deflection driver for driving this deflection coil 20. This deflection driver 21 receives a deflection position control signal supplied from the measurement pad voltage measuring means 8. The deflection coil 20 is configured to be driven based on the deflection coil 20.

In addition, 22 is a measurement pad 4 which is irradiated with the electron beam 15.
23 is an energy analyzer that controls the passage of the secondary electrons 22 based on the analysis voltage ■ and makes it possible to measure the voltage of the measurement pad 4; 24 is an energy analyzer 23 that applies the analysis voltage (2) This analysis voltage generator 24 is configured to generate the analysis voltage (1) based on the analysis voltage control signal supplied from the measurement pad voltage measuring means 8. .

Further, 25 is a secondary electron detector that detects the secondary electrons 22 that have passed through the energy analyzer 23 and outputs an electric signal with an intensity corresponding to the energy of the secondary electrons 22, a so-called secondary electron signal. The secondary electron signal is supplied to the measurement pad voltage measuring means 8.

Further, 26 is an input device for specifying a measurement pad for voltage measurement, and 27 is a measurement result output device composed of a CRT or the like.

In such a conventional test device, when testing the LSI 6, first, as shown in FIG.
Analysis voltage versus secondary electron signal intensity curve (hereinafter referred to as S curve) 2 at B-1° and maximum value VB-h1□
8.29 is determined through irradiation of the measurement pad 4 with the electron beam 15 and detection of the secondary electrons 22 by the secondary electron detector 25.

Next, a predetermined secondary electron signal strength (hereinafter referred to as slice level) Stbo is set, and in the S curve 28.29, the secondary electron signal strength reaches the slice level S th
analysis voltage Vr-low, Vr=b l consistent with o
gb is calculated.

Next, when the detected secondary electron signal strength is at the slice level 5tho, the relational expression between the analysis voltage 7 and the measurement pad voltage % is the lowest value of the voltage that the measurement pad 4 can take. V @-low
and the analysis voltage Vr-, at that time. , and measurement pad 4
The maximum voltage that can be taken by Vs-b1. By substituting b and the analysis voltage Vr-hl□ at that time, a and b are obtained, and these a and b are registered in the parameter table 81. By the way, a and b are calculated as follows V r-b +x
b V r-lowVr-blgh Vr-1ow Note that FIG. 7 illustrates equation (1).

Measuring pad 4 when driving LSI6 eco-friendly
The voltage value is the secondary electron signal intensity at the slice level S
It can be calculated by measuring the analysis voltage (2) such that tho, and substituting this analysis voltage (7) into equation (1). Note that this calculation is performed in the measurement pad voltage calculation section 83.

By the way, in such an LSI testing device, if the measurement pad 4 is continuously irradiated with the electron beam 15, the measurement pad 4 will accumulate dirt due to hydrocarbons, etc., so-called contamination, and the S curve 28.29 will become 2. For example, as shown in FIG. 8, a shift occurs as shown in S curves 30 and 31, and a change occurs in the slice level s tho, making it impossible to use equation (1) as is.

Regarding this point, in conventional LSI testing equipment, for example, the secondary electron signal strength Sth is measured when the measurement pad voltage (1) is Vs5-1o and the analysis voltage (1) is Vr-1°. The coefficients a and b of equation (1) were corrected using this secondary electron signal strength Stb as a new slice level, and then equation (1) was used.

[Problem to be Solved by the Invention] In this way, in the conventional LSI testing method, the shift in the secondary electron signal intensity axis direction and the shift in the analysis voltage axis direction of the S curve 28, 29 must be dealt with separately. First, a shift in the secondary electron signal intensity axis and a shift in the analysis voltage axis are simultaneously addressed. Therefore, although the actual relational expression between the analysis voltage and the measurement pad voltage is as shown by the broken line 32 in FIG. 9, when using this conventional method, it becomes as shown by the solid line 33. For this reason, in the conventional test method, there was a problem in that highly accurate voltage measurement could not be performed on the measurement pad 4.

In view of the above, the present invention provides an LSI testing method and testing device that enables highly accurate voltage measurements on the measurement pads even when contamination accumulates on the measurement pads. The purpose is to provide

[Means for Solving the Problems] The LSI testing method according to the present invention includes a lens barrel in which an electron beam irradiation mechanism is provided, an opening is formed in the electron beam irradiation direction, and the opening is closed. The LSI to be tested is mounted on the outer part of the lens barrel via a socket, and the inner part of the lens barrel is formed with a measurement pad that is electrically connected to the external bin of the LSI, and an electronic an energy analyzer that controls the passage of secondary electrons emitted from the measurement pad by beam irradiation using an analysis voltage; and a secondary electron detector that detects the secondary electrons that have passed through the energy analyzer as a secondary electron signal. 1. A method for testing an LSI using an LSI testing apparatus comprising The first S when the pad is at the lowest possible voltage
After determining the curve and a second S-curve in the case where the voltage of the measurement pad is a second voltage higher than the first voltage, for example, the highest voltage that the measurement pad can take,
Determining a relational expression between the analysis voltage and the measurement pad voltage at the slice level from the first and second S curves, and measuring the analysis voltage when the detected secondary electron signal intensity is at the slice level. In the LSI testing method for measuring the voltage of a measurement pad from the above relational expression, the shift of the first and second S curves due to dirt accumulated on the measurement pad is defined as a shift in the secondary electron signal intensity axis direction. After dividing into shifts in the analysis voltage axis direction and correcting the predetermined secondary electron signal intensity by the shift in the secondary electron signal intensity axis direction, taking into account the change in the secondary electron signal intensity at the lowest analysis voltage, The coefficient of the relational expression between the analysis voltage and the measurement pad voltage is corrected by the shift in the analysis voltage axis direction, and the intensity of the detected secondary electron signal is then corrected by taking into account the shift amount in the analysis voltage axis direction. The analysis voltage when the corrected predetermined secondary electron signal intensity is reached is measured, and the voltage of the measurement pad is measured using the relational expression obtained by correcting the coefficient.

Here, the correction of the slice level, that is, the new slice level is a minimum analysis voltage, a secondary electron signal intensity when the electron beam is cut off (hereinafter referred to as beam off level), The beam off level obtained by subtracting the beam off level from the slice level and dividing the value obtained by subtracting the beam off level from the intensity of the secondary electron signal at the minimum analysis voltage by 15. The intensity ratio between the slice level and the secondary electron signal intensity at the minimum analysis voltage is registered, and the secondary electron signal intensity at the forward bending minimum analysis voltage is measured. The beam from
It can be determined by multiplying the value obtained by subtracting the off level by the intensity ratio and adding the beam off level.

In addition, the correction of the coefficients of the relational expression, that is, the new coefficients of the relational expression, for example, register the coefficients in the relational expression, apply a known voltage to the measurement pad, and detect at this time. measuring the analysis voltage when the intensity of the secondary electron signal is the corrected predetermined secondary electron signal intensity,
It can be determined by substituting the value of the analysis voltage and the value of the known voltage applied to the measurement pad into the relational expression.

Further, the LSI testing apparatus according to the present invention is an apparatus for carrying out the LSI testing method according to the present invention, and includes an electron beam irradiation mechanism provided therein, and a mirror having an opening in the electron beam irradiation direction. A measurement method in which the tube and the opening are closed, the integrated circuit to be tested is mounted on the outer part of the tube via a socket, and the inner part of the tube is electrically connected to the external bottle of the integrated circuit. a substrate on which a pad is formed; an energy analyzer that controls passage of secondary electrons emitted from the measurement pad by irradiation with an electron beam using an analysis voltage; A secondary electron detector detects a secondary electron signal, and the analysis voltage is scanned so that the intensity of the secondary electron signal detected by the secondary electron detector becomes a predetermined secondary electron signal intensity. a coefficient in the relational expression between the analysis voltage and the measurement pad voltage, the secondary electron signal intensity when the electron beam is interrupted, the predetermined secondary electron signal intensity, the minimum analysis voltage, and the secondary electron signal intensity when the electron beam is interrupted; a storage unit that stores an intensity ratio between the predetermined secondary electron signal intensity based on the secondary electron signal intensity and the secondary electron signal intensity at the minimum analysis voltage, and corrects parameters necessary for calculating the measurement pad voltage; a parameter correction section for
and a measurement pad voltage calculation section that calculates the measurement pad voltage based on the parameter or the corrected parameter.

[Function] In the LSI testing method according to the present invention, the shift of the S curve due to contamination accumulated on the measurement pad is divided into a shift in the direction of the secondary electron signal intensity axis and a shift in the direction of the analysis voltage axis. After the slice level is corrected by the shift in the intensity axis direction by taking into account the change in the secondary electron signal intensity at the minimum analysis voltage, the relational expression between the analysis voltage and the measurement pad voltage by the shift in the analysis voltage axis direction is Since the coefficients are corrected in consideration of the amount of shift in the axis direction of the analysis voltage, it is possible to perform highly accurate correction of the slice level and the coefficients of the relational expression between the analysis voltage and the measurement pad voltage.

Therefore, even if contamination is accumulated on the measurement pad, highly accurate voltage measurement can be performed on the measurement pad.

Furthermore, in order to carry out the LSI testing method according to the present invention, the LSI testing apparatus according to the present invention is configured such that the intensity of the secondary electron signal detected by the secondary electron detector is at a slice level. Coefficients of the relational expression between the analysis voltage and the voltage of the measurement pad, the slice level, the minimum analysis voltage, the secondary electron signal at the slice level and the minimum analysis voltage based on the beam cut level A storage unit is provided to store the intensity ratio.

[Example] Hereinafter, with reference to FIGS. 1 to 4, an LSI according to the present invention will be described.
An example of the test method and test device will be explained. In FIG. 1, parts corresponding to those in FIG. 5 are denoted by the same reference numerals, and redundant explanation thereof will be omitted.

FIG. 1 is a conceptual diagram showing the essential parts of an embodiment of an LSI test device according to the present invention.The test device of this embodiment is different from the conventional test device shown in FIG. 8 is registered (described later) in the parameter table 81, a, b registration section 82, measurement pad voltage calculation section 83, beam off level registration section 84, slice level registration section 85, and minimum analysis voltage registration section 86. 87 and a parameter correction section 88, and the rest of the structure is the same as that of the conventional example shown in FIG.

In this embodiment, when testing the LSI 6, as shown in FIG.
(., and the S curve 28 at the highest value Va-h1gh
．． 29 is irradiation of the electron beam 15 onto the measurement pad 4;
It is determined through detection of secondary electrons 22 by a secondary electron detector 25.

Next, a predetermined slice level S iho is set;
In S-curve 28.29, the analysis voltage Vr-10 at which the secondary electron signal intensity matches the slice level 5thO
W and V r-bllb are calculated.

Next, the secondary electron signal strength is determined by the slice level S tb
The relational expression between the analysis voltage (1) and the measurement bat voltage (1) when the analysis voltage (7) is varied so that the voltage (1) is the lowest voltage that the measurement pad 4 can take. Ho
.

and the analysis voltage Vr-low and measurement pad 4 at that time.
By substituting the highest possible voltage value Vm-high and the analysis voltage Vr-h1gb at that time, a and b are obtained, and these are registered in the parameter table 81.

In addition, in this embodiment, the beam off level 58-0f
f, slice level 5tbo, minimum analysis voltage V r-
sc-ml. , the secondary electron signal strength 5e-ba □ at the minimum analysis voltage V r-m1m with respect to the beam off level S @-off and the slice level S iho
is registered as the intensity ratio between . These are performed via the beam off level registration section 84, slice level registration section 85, minimum analysis voltage registration section 86, and registration section 87.

Here, if there is no shift in the S curve 28.29 due to contamination accumulated on the measurement pad 4, (1)
The voltage of the measurement pad 4 can be measured using the equation as is. However, as shown in FIG. 2, if the S curve 28.29 is shifted to the S curve 34.35, for example, it is necessary to correct the coefficient a in equation (1).

In this case, in this example, the S curves 28 and 29 are shifted in the direction of the secondary electron signal axis to become S curves 36 and 37, and this S curve 36 and 37 is further shifted along the analysis voltage axis. It is assumed that the direction has shifted to an S curve of 34.35.

Therefore, first, the slice level S tho is corrected. This is done by measuring the secondary electron signal intensity 5e-base at the minimum analysis voltage Vr-me-aLn,
As a result, the obtained S e-base is substituted into equation (2), that is, the slice level 8 □ at S curve 36.37 is obtained from the equation %.
th is calculated.

Next, as shown in FIG. 3, a known voltage V a-atd is applied to the measurement pad 4, and in this case, the analysis voltage Vr when the secondary electron signal intensity becomes the slice level S, -1 is applied.
-Measure atd. Here, when b is unchanged and the slice level is S thQ, equation (1) becomes V, -a +bXv, -= (3>) when the slice level is 5e-th. Since it is, V, − is added to this equation (3).
Substitute Vs-atd, Vr = Vr-sad and set a = ■, -@t, 1-bXV*-mtd as a
is calculated. Therefore, from now on, the voltage of the measurement pad 4 is measured using equation (3).

That is, the detected secondary electron signal intensity is at the slice level S
The analysis voltage (2) such that e-th is measured is measured, and the voltage measurement of the measurement pad 4 is performed by substituting the analysis voltage Vr at this time into equation (3). Note that such parameter correction is performed in the parameter correction section 88.

In this way, in this example, the S curve 28.29
is divided into a shift in the secondary electron signal intensity axis direction and a shift in the analysis voltage axis direction, and the correction of the slice level S tho due to the shift in the secondary electron signal intensity axis direction is calculated as follows: After taking into account the change in the next electron signal intensity, the coefficient a in equation (1) is corrected by taking into account the shift amount in the analysis voltage axis direction. - Highly accurate correction can be made for the level and f-thread number a.

Therefore, according to this embodiment, even if contamination is accumulated on the measurement pad 4, highly accurate voltage measurement can be performed on the measurement pad 4.

Note that the setting of the minimum analysis voltage Vr-sc-ml is done empirically, but for example, if it is set as shown in FIG.
When shifted as follows, the minimum analysis voltage V r-ac1
An error ε occurs in the secondary electron signal intensity at 1A, and an error ε× occurs when determining the corrected slice level S, -□. Therefore, when changing the minimum analysis voltage V r-me-+mln in proportion to the shift amount in the analysis voltage axis direction of the S curve, that is, the minimum analysis voltage V r-me-w at S curve 34.35
After correcting and registering in゛, next
When correcting levels, it is important to make accurate corrections.
Moreover, the LSI testing apparatus according to the present invention is frightening ζf.
In the fourth section, Vr-sc-saw indicates the maximum analysis voltage when carrying out the LSI testing method according to the present invention.
can.

[Effects of the Invention] According to the LSI testing method according to the present invention, the shift of the S curve due to contamination accumulated on the measurement pad is divided into a shift in the secondary electron signal intensity axis direction and a shift in the analysis voltage axis direction. After the slice level is corrected by a shift in the secondary electron signal intensity axis, taking into account the change in the secondary electron signal intensity at the minimum analysis voltage, the analysis voltage and the measurement pad voltage are By taking into account the amount of shift in the axis direction of the analysis voltage when correcting the coefficients of the relational expression, the coefficients of the relational expression between the slice level and the analysis voltage and the measurement pad voltage can be corrected with high precision. Therefore, even if contamination is accumulated on the measurement pad, highly accurate voltage measurement can be performed on the measurement pad.

[Brief explanation of the drawing]

FIG. 1 is a conceptual diagram showing the main parts of an embodiment of an LSI testing device according to the present invention, FIG. 2 is a diagram showing an S curve, and FIG. 3 is a relational expression between analysis voltage and measurement pad voltage. is a diagram for explaining that it is preferable to correct the minimum analysis voltage, Figure 5 is a conceptual diagram showing the main parts of a conventional LSI test device, Figure 6 is a diagram showing an S curve, Figure 7 shows the relationship between the analysis voltage and the measurement pad voltage, and Figure 8 shows the method for correcting the coefficient in the relational expression between the analysis voltage and the measurement pad voltage, which was adopted in the conventional LSI testing method. Figure 9 shows problems with conventional LSI testing methods, and is a diagram showing the relational expression between the analysis voltage and the measurement node voltage. 8...Measurement pad voltage Measurement means 81 Parameter table 82 A, b registration section 83 Measurement pad voltage calculation section 84 Beam off level registration section 85 Slice level registration section 86 Minimum analysis voltage Registration unit 87...Registration unit 88...Parameter correction unit 0\

Claims (5)

[Claims] (1) A lens barrel in which an electron beam irradiation mechanism is installed and an opening is formed in the direction of electron beam irradiation, the opening is closed, and an integrated circuit to be tested is placed on the outside of the lens barrel. a substrate mounted through a socket and formed with a measurement pad electrically connected to an external pin of the integrated circuit on the inner side of the lens barrel; and secondary electrons emitted from the measurement pad when irradiated with an electron beam. An integrated circuit testing device is used, which includes an energy analyzer that controls the passage of the energy analyzer using an analysis voltage, and a secondary electron detector that detects the secondary electrons that have passed through the energy analyzer as a secondary electron signal. A first analysis voltage versus secondary electron signal intensity curve when the measurement pad is irradiated with the electron beam and the voltage of the measurement pad is a first voltage. and after determining a second analysis voltage versus secondary electron signal intensity curve in the case where the voltage of the measurement pad is a second voltage higher than the first voltage, the first and second analysis voltages are determined. A relational expression between the analysis voltage and the measurement pad voltage at a predetermined secondary electron signal strength is determined from the secondary electron signal strength curve, and when the detected secondary electron signal strength is the predetermined secondary electron signal strength, A method for testing an integrated circuit in which the voltage of the measurement pad is measured from the relational expression by measuring the value of the analysis voltage, wherein the voltage of the first and second analysis voltages due to dirt accumulated on the measurement pad vs. The shift of the electron signal intensity curve is divided into a shift in the secondary electron signal intensity axis direction and a shift in the analysis voltage axis direction, and the correction of the predetermined secondary electron signal intensity due to the shift in the secondary electron signal intensity axis direction is analyzed at a minimum. After taking into account the change in the secondary electron signal intensity due to the voltage, the coefficient of the relational expression between the analysis voltage and the measurement pad voltage is corrected by the shift in the analysis voltage axis direction by the amount of shift in the analysis voltage axis direction. Measure the value of the analysis voltage when the intensity of the detected secondary electron signal becomes the corrected predetermined secondary electron signal intensity, and perform the measurement using the relational expression in which the coefficient is corrected. A method for testing an integrated circuit, comprising measuring the voltage at a pad. (2) The correction of the predetermined secondary electron signal intensity is based on the minimum analysis voltage, the secondary electron signal intensity when the electron beam is blocked, and the correction of the electron beam from the predetermined secondary electron signal intensity. The electron beam obtained by subtracting the secondary electron signal intensity when the electron beam is cut off by the value obtained by subtracting the secondary electron signal intensity when the electron beam is blocked from the secondary electron signal intensity at the minimum analysis voltage. The intensity ratio between the predetermined secondary electron signal strength and the secondary electron signal strength at the minimum analysis voltage is registered, based on the secondary electron signal strength when the secondary electron signal strength is cut off. The electron signal intensity is measured, and the value obtained by subtracting the secondary electron signal intensity when the electron beam is blocked from the secondary electron signal intensity is multiplied by the intensity ratio, and the secondary electron signal intensity when the electron beam is blocked is calculated. 2. The method for testing an integrated circuit according to claim 1, wherein the method is carried out by adding up electronic signal intensities. (3) To correct the coefficient of the relational expression between the analysis voltage and the measurement pad voltage, register the coefficient in the relational expression between the analysis voltage and the measurement pad voltage, and apply a known voltage to the measurement pad. , Measure the value of the analysis voltage when the intensity of the secondary electron signal detected at this time becomes the corrected predetermined secondary electron signal intensity, and calculate the value of the analysis voltage and the known voltage applied to the measurement pad. 2. The integrated circuit testing method according to claim 1, wherein a new coefficient is obtained by substituting the value of . (4) correcting the minimum analysis voltage to a value corresponding to the shift amount in the analysis voltage axis direction of the first and second analysis voltage versus secondary electron signal intensity curves, and measuring the voltage of the measurement pad; The method for testing an integrated circuit according to claim 1, characterized in that: (5) A lens barrel in which an electron beam irradiation mechanism is provided and an opening is formed in the direction of electron beam irradiation, the opening is closed, and an integrated circuit to be tested is placed on the outside of the lens barrel. A substrate mounted through a socket and having a measurement pad formed on the inner side of the lens barrel to be electrically connected to an external pin of the integrated circuit, and secondary electrons emitted from the measurement pad when irradiated with an electron beam. an energy analyzer that controls passage of the secondary electrons by an analysis voltage; a secondary electron detector that detects the secondary electrons that have passed through the energy analyzer as a secondary electron signal; The coefficient in the relational expression between the analysis voltage and the measurement pad voltage when the analysis voltage is scanned so that the intensity of the secondary electron signal becomes a predetermined secondary electron signal intensity; Secondary electrons at the predetermined secondary electron signal intensity and the minimum analysis voltage based on the electron intensity, the predetermined secondary electron signal intensity, the minimum analysis voltage, and the secondary electron signal intensity when the electron beam is blocked. a storage unit that stores an intensity ratio to a signal strength; a parameter correction unit that corrects parameters necessary to calculate a measurement pad voltage; and a measurement pad that calculates the measurement pad voltage based on the parameter or the corrected parameter. 1. A testing device for an integrated circuit, comprising: a voltage calculation section.