JPH0493078A - Schottky diode - Google Patents
Schottky diodeInfo
- Publication number
- JPH0493078A JPH0493078A JP2209105A JP20910590A JPH0493078A JP H0493078 A JPH0493078 A JP H0493078A JP 2209105 A JP2209105 A JP 2209105A JP 20910590 A JP20910590 A JP 20910590A JP H0493078 A JPH0493078 A JP H0493078A
- Authority
- JP
- Japan
- Prior art keywords
- schottky diode
- formula
- hydrogen atom
- organic semiconductor
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 229920000642 polymer Polymers 0.000 claims abstract description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 4
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 3
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 abstract 3
- 125000000129 anionic group Chemical group 0.000 abstract 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- -1 monobutylammonium hexafluorophosphate Chemical compound 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、安定性に優れ、電解重合法により容易に形
成可能な導電性重合体からなるＰ型半導体の表面に特定
の金属層が形成されてなるショクＩ・キーダイオードに
関する。Detailed Description of the Invention (Field of Industrial Application) This invention is directed to the formation of a specific metal layer on the surface of a P-type semiconductor made of a conductive polymer that has excellent stability and can be easily formed by electrolytic polymerization. Regarding Shoku I/Key diodes.
（従来の技術）
従来のＰ現有機半導体を用いたショットキーダイオード
としては、例えば特開昭５６−１４６２８４号公報、特
開昭５６−１４７４８７号公報に開示されているような
導電性ポリアセチレンにアルミニウム等の金属を被着し
てなるショットキーダイオードが知られている。(Prior art) Schottky diodes using conventional P-based organic semiconductors include conductive polyacetylene and aluminum as disclosed in, for example, JP-A-56-146284 and JP-A-56-147487. Schottky diodes are known, which are made by depositing metals such as .
（発明が解決しようとする課題）
しかしながら、このような従来の導電性ポリアセチレン
を用いたショットキーダイオードにあっては、空気中の
酸素や水分によって極めて酸化劣化し易いためそのショ
ットキーダイオードは整流性等の電気的特性が安定して
得られないという問題点があった。(Problem to be solved by the invention) However, Schottky diodes using such conventional conductive polyacetylene are extremely susceptible to oxidative deterioration due to oxygen and moisture in the air, so the Schottky diodes have poor rectifying properties. There was a problem that stable electrical characteristics such as these could not be obtained.
（課題を解決するための手段）
かかる現況に鑑み本発明者らは従来のショットキーダイ
オードの問題点を解決すべく鋭意研究を行った結果、次
の構造式
（式中のＧは水素原子、アルキル基、またはアルコキシ
ル基を示し、ｎは０または１を示す）で表わされる、電
解酸化法により得られた酸化重合体を用いることにより
解決し得ることを知見し、この発明を達成するに至った
。(Means for Solving the Problems) In view of the current situation, the present inventors conducted intensive research to solve the problems of conventional Schottky diodes, and as a result, the following structural formula (G in the formula is a hydrogen atom, They found that the problem could be solved by using an oxidized polymer represented by an alkyl group or an alkoxyl group (where n is 0 or 1) obtained by an electrolytic oxidation method, and were able to achieve this invention. Ta.
従って、この発明のショットキーダイオードは、式（１
）で表わされる繰返し単位を有する、電解酸化法により
得られた重合体から成るＰ現有機半導体膜の表面にアル
ミニウム（ＡＩ）、インジウム（Ｉｎ）およびガリウム
（Ｇａ）よりなる群から選ばれた少なくとも１種の金属
層が形成されてなるものである。Therefore, the Schottky diode of the present invention has the formula (1
) at least selected from the group consisting of aluminum (AI), indium (In), and gallium (Ga) on the surface of a P-based organic semiconductor film made of a polymer obtained by an electrolytic oxidation method and having repeating units represented by It is formed by forming one type of metal layer.
この発明において、上記Ｐ現有機半導体膜を形成する重
合体としては、式（１）のｎが０または１のいずれかの
繰返し単位を有する重合体またはｎが０または１の式（
１）の繰返し単位を有する重合体が任意の割合で混合さ
れてなる重合体が用いられる。In this invention, the polymer forming the above-mentioned P-based organic semiconductor film is a polymer having a repeating unit of formula (1) where n is either 0 or 1 or a formula (
A polymer obtained by mixing polymers having the repeating unit 1) in an arbitrary ratio is used.
（実施例）
以下、図面を参照してこの発明を実施例により説明する
。(Examples) Hereinafter, the present invention will be explained by examples with reference to the drawings.
裏旌拠上
式（１）において、Ｇが水素原子、ｎがＯのモノマブチ
ルアンモニウムへキサフルオロフォスフェートを含むベ
ンゾニトリル溶液中でガラス基板上に設けた酸化インジ
ウム錫 （ＩＴＯ）を作用電極として、電解酸化を行い
電解重合膜から成るＰ型半導体の膜（３０００人）を得
た。これを約１０％アニオンドーピングしたのち、アセ
トム１−リルで洗浄し、乾燥した後、上部電極として八
１を蒸着しく５００人）、第１図に示すようなショット
キーダイオード（へ１／Ｐ型有機半導体／ＩＴＯ）を作
製した。第１図において１はガラス基板、２はＩＴＯ，
３はＰ型半導体、４はアルミニウム、５はリード線を示
す。In the above formula (1), indium tin oxide (ITO) provided on a glass substrate in a benzonitrile solution containing monobutylammonium hexafluorophosphate, where G is a hydrogen atom and n is O, is used as a working electrode. , Electrolytic oxidation was performed to obtain a P-type semiconductor film (3000 people) consisting of an electrolytically polymerized film. After anion doping of about 10%, washing with acetom 1-lyl and drying, evaporate 81 as the upper electrode (500 people), and form a Schottky diode (1/P type Organic semiconductor/ITO) was produced. In Fig. 1, 1 is a glass substrate, 2 is an ITO,
3 is a P-type semiconductor, 4 is aluminum, and 5 is a lead wire.
このようにして得たダイオードの電流−電圧特性を第２
図に示す。±３．５ｖにおける整流比は１１倍であった
。第２図から明らかなように得られたショットキーダイ
オードは良好な整流性を有し、またこの特性は経時的に
変化することなく、安定したものであった。The current-voltage characteristics of the diode obtained in this way are
As shown in the figure. The rectification ratio at ±3.5v was 11 times. As is clear from FIG. 2, the obtained Schottky diode had good rectifying properties, and this characteristic did not change over time and was stable.
実施撚１
式（１）において、Ｇが水素原子、ｎが０のモノマを１
；４の割合で調整した混合溶液から電解重合膜を電解酸
化により形成した以外は、実施例１と同様にしてショッ
トキーダイオード（ＡＩ／Ｐ型有機半導体／ＩＴＯ）を
作製した。Practical twist 1 In formula (1), G is a hydrogen atom and n is 0 monomer.
A Schottky diode (AI/P-type organic semiconductor/ITO) was produced in the same manner as in Example 1, except that an electropolymerized film was formed by electrolytic oxidation from a mixed solution prepared at a ratio of 4.
第３図かられかるように逆方向は電流はほとんど流さず
、±３，５ｖでの整流比は１０２以上であった。As can be seen from FIG. 3, almost no current flowed in the reverse direction, and the rectification ratio at ±3.5V was 102 or more.
このように得られたショットキーダイオードは良好な整
流性を有し、またこの特性は経時的に変化することなく
安定したものであった。The thus obtained Schottky diode had good rectifying properties, and this property was stable without changing over time.
（発明の効果）
以上説明してきたように、この発明によれば、その構成
をトリフェニルアミンにチオフェン部位が直接結合した
モノマーの電解酸化重合膜からなるＰ型有機半導体表面
に特定の金属層を被着したショットキーダイオードとし
たため、酸素および水分等によって劣化することがなく
安定に使用できる。また電解重合法によって重合体を形
成することができる点できわめて容易に、ショットキー
ダイオードを作製できるという効果が得られる。(Effects of the Invention) As described above, according to the present invention, a specific metal layer is formed on the surface of a P-type organic semiconductor, which is composed of an electrolytically oxidized polymer film of a monomer in which a thiophene moiety is directly bonded to triphenylamine. Since it is a coated Schottky diode, it can be used stably without being degraded by oxygen, moisture, etc. Furthermore, since the polymer can be formed by electrolytic polymerization, it is possible to produce a Schottky diode very easily.
更にドーピングレベルの調節により、重合体膜の抵抗お
よび光の吸光度を調節することも容易であり、かかるシ
ョットキーダイオードは電子阻止回路におけるダイオー
ドや太陽電池等の用途に役立つ。Moreover, by adjusting the doping level, it is easy to adjust the resistance and light absorbance of the polymer film, making such Schottky diodes useful for applications such as diodes in electronic blocking circuits and solar cells.
第１図は、本発明の一例のショットキーダイオードの断
面図、
第２図および第３図はそれぞれ実施例１および実施例２
のショットキーダイオード（ＡＩ／Ｐ型有機半導体＃Ｔ
Ｏ）の電流−電圧特性図である。
１・・・ガラス基板 ２・・・ＩＴＯ３・・・Ｐ
型半導体 ４・・・アルミニウム５・・・リード
線FIG. 1 is a cross-sectional view of a Schottky diode as an example of the present invention, and FIGS. 2 and 3 are Example 1 and Example 2, respectively.
Schottky diode (AI/P-type organic semiconductor #T
It is a current-voltage characteristic diagram of O). 1...Glass substrate 2...ITO3...P
Type semiconductor 4... Aluminum 5... Lead wire
Claims (1)
ル基を示し、ｎは０または１を示す）で表わされる繰返
し単位を有する、電解酸化法により得られた重合体から
成るＰ型有機半導体膜の表面にアルミニウム、インジウ
ムおよびガリウムよりなる群から選ばれた少なくとも１
種の金属層が形成されてなることを特徴とするショット
キーダイオード。 ２、ｎが０または１の式（１）の繰返し単位を有する
重合体が任意の割合で混合されてなる重合体を用いたこ
とを特徴とする請求項１記載のショットキーダイオード
。[Claims] 1. The following structural formula ▲ Numerical formula, chemical formula, table, etc. ▼... (1) (In the formula, G represents a hydrogen atom, an alkyl group, or an alkoxyl group, and n is 0 or 1. At least one member selected from the group consisting of aluminum, indium and gallium is coated on the surface of a P-type organic semiconductor film made of a polymer obtained by an electrolytic oxidation method and having a repeating unit represented by
A Schottky diode characterized by forming a seed metal layer. 2. The Schottky diode according to claim 1, characterized in that the Schottky diode uses a polymer obtained by mixing polymers having repeating units of formula (1) in which n is 0 or 1 in an arbitrary ratio.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2209105A JPH0493078A (en) | 1990-08-09 | 1990-08-09 | Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2209105A JPH0493078A (en) | 1990-08-09 | 1990-08-09 | Schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0493078A true JPH0493078A (en) | 1992-03-25 |
Family
ID=16567375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2209105A Pending JPH0493078A (en) | 1990-08-09 | 1990-08-09 | Schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0493078A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004508731A (en) * | 2000-09-11 | 2004-03-18 | シーメンス アクチエンゲゼルシヤフト | Use of organic rectifiers, circuits, RFID tags, and organic rectifiers |
| JP2006520478A (en) * | 2003-01-17 | 2006-09-07 | ダイオード・ソリューションズ・インコーポレーテッド | Display using organic materials |
| US8193594B2 (en) | 2006-11-07 | 2012-06-05 | Cbrite Inc. | Two-terminal switching devices and their methods of fabrication |
| US8222077B2 (en) | 2006-11-07 | 2012-07-17 | Cbrite Inc. | Metal-insulator-metal (MIM) devices and their methods of fabrication |
| US9741901B2 (en) | 2006-11-07 | 2017-08-22 | Cbrite Inc. | Two-terminal electronic devices and their methods of fabrication |
-
1990
- 1990-08-09 JP JP2209105A patent/JPH0493078A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004508731A (en) * | 2000-09-11 | 2004-03-18 | シーメンス アクチエンゲゼルシヤフト | Use of organic rectifiers, circuits, RFID tags, and organic rectifiers |
| JP2006520478A (en) * | 2003-01-17 | 2006-09-07 | ダイオード・ソリューションズ・インコーポレーテッド | Display using organic materials |
| US8253910B2 (en) | 2003-01-17 | 2012-08-28 | Cbrite Inc. | Display employing organic material |
| US8193594B2 (en) | 2006-11-07 | 2012-06-05 | Cbrite Inc. | Two-terminal switching devices and their methods of fabrication |
| US8222077B2 (en) | 2006-11-07 | 2012-07-17 | Cbrite Inc. | Metal-insulator-metal (MIM) devices and their methods of fabrication |
| US9741901B2 (en) | 2006-11-07 | 2017-08-22 | Cbrite Inc. | Two-terminal electronic devices and their methods of fabrication |
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