JPH0484362U - - Google Patents
Info
- Publication number
- JPH0484362U JPH0484362U JP12654990U JP12654990U JPH0484362U JP H0484362 U JPH0484362 U JP H0484362U JP 12654990 U JP12654990 U JP 12654990U JP 12654990 U JP12654990 U JP 12654990U JP H0484362 U JPH0484362 U JP H0484362U
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- raw material
- single crystal
- crystal manufacturing
- feeder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002994 raw material Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 5
- 238000004090 dissolution Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000002955 isolation Methods 0.000 claims 3
- 239000000155 melt Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990126549U JPH0711177Y2 (ja) | 1990-11-30 | 1990-11-30 | 半導体単結晶製造装置の原料供給機構 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990126549U JPH0711177Y2 (ja) | 1990-11-30 | 1990-11-30 | 半導体単結晶製造装置の原料供給機構 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0484362U true JPH0484362U (US07135483-20061114-C00003.png) | 1992-07-22 |
| JPH0711177Y2 JPH0711177Y2 (ja) | 1995-03-15 |
Family
ID=31874100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990126549U Expired - Lifetime JPH0711177Y2 (ja) | 1990-11-30 | 1990-11-30 | 半導体単結晶製造装置の原料供給機構 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0711177Y2 (US07135483-20061114-C00003.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011162380A (ja) * | 2010-02-08 | 2011-08-25 | Sumco Corp | シリコン原料の溶解方法および供給装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01122988A (ja) * | 1987-11-06 | 1989-05-16 | Kawasaki Steel Corp | 単結晶を成長させる方法および単結晶製造装置 |
| JPH02279582A (ja) * | 1989-04-21 | 1990-11-15 | Komatsu Denshi Kinzoku Kk | 半導体単結晶製造装置及び製造方法 |
-
1990
- 1990-11-30 JP JP1990126549U patent/JPH0711177Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01122988A (ja) * | 1987-11-06 | 1989-05-16 | Kawasaki Steel Corp | 単結晶を成長させる方法および単結晶製造装置 |
| JPH02279582A (ja) * | 1989-04-21 | 1990-11-15 | Komatsu Denshi Kinzoku Kk | 半導体単結晶製造装置及び製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011162380A (ja) * | 2010-02-08 | 2011-08-25 | Sumco Corp | シリコン原料の溶解方法および供給装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0711177Y2 (ja) | 1995-03-15 |
