JPH0478594B2 - - Google Patents
Info
- Publication number
- JPH0478594B2 JPH0478594B2 JP27908188A JP27908188A JPH0478594B2 JP H0478594 B2 JPH0478594 B2 JP H0478594B2 JP 27908188 A JP27908188 A JP 27908188A JP 27908188 A JP27908188 A JP 27908188A JP H0478594 B2 JPH0478594 B2 JP H0478594B2
- Authority
- JP
- Japan
- Prior art keywords
- garnet
- crystal
- gadolinium
- gallium
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 30
- 239000002223 garnet Substances 0.000 claims description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- OSGMVZPLTVJAFX-UHFFFAOYSA-N [Gd].[Lu] Chemical compound [Gd].[Lu] OSGMVZPLTVJAFX-UHFFFAOYSA-N 0.000 claims description 2
- 239000012071 phase Substances 0.000 description 5
- TVFHPXMGPBXBAE-UHFFFAOYSA-N [Sc].[Gd] Chemical compound [Sc].[Gd] TVFHPXMGPBXBAE-UHFFFAOYSA-N 0.000 description 4
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical group [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910003443 lutetium oxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁気光学素子や光熱磁気記録媒体の
単結晶基板あるいは発光中心になる遷移金属元素
または希土類元素を添加するためのホスト結晶と
して利用し得る新組成のガーネツト結晶に関す
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention can be used as a single crystal substrate of a magneto-optical element or a photothermal magnetic recording medium, or as a host crystal for doping a transition metal element or a rare earth element that becomes a luminescence center. This paper relates to a new composition of garnet crystals that can be used.
ガーネツト結晶は12面体8配位、8面体6配位
および4面体4配位の3つの異なる原子占有サイ
トを持つている。
Garnet crystals have three different atomic occupancy sites: 8 dodecahedral coordinations, 6 octahedral coordinations, and 4 tetrahedral coordinations.
従来、12面体8配位サイトをガドリニウムが占
め、4面体4配位サイトをガリウムが占めるガー
ネツト結晶としては、ガドリニウムガリウムガー
ネツト結晶(Gd3Ga5O12)およびガドリウムスカ
ンジウムガリウムガーネツト結晶(Gd3Sc2Ga3
O12)が知られている。これら従来のガーネツト
結晶は、格子定数が12.38〜12.56Aの範囲にあり、
磁気光学素子や光熱磁気記録媒体の単結晶基板あ
るいは発光域を広くするためのホスト結晶として
用いた場合、格子定数が小さいために良好な磁気
光学素子等を得にくいと言う問題があつた。 Conventionally, garnet crystals in which gadolinium occupies dodecahedral 8-coordination sites and gallium occupies tetrahedral 4-coordination sites include gadolinium gallium garnet crystal (Gd 3 Ga 5 O 12 ) and gadolinium scandium gallium garnet crystal ( Gd 3 Sc 2 Ga 3
O12 ) is known. These conventional garnet crystals have lattice constants ranging from 12.38 to 12.56A,
When used as a single crystal substrate for a magneto-optical element or a photothermal magnetic recording medium, or as a host crystal for widening the light emitting region, there is a problem in that it is difficult to obtain a good magneto-optical element etc. due to the small lattice constant.
本発明は、上述の問題を解消するためになされ
たものであり、従来のガドリニウムガリウムガー
ネツト結晶やガドリニウムスカンジウムガリウム
ガーネツト結晶の格子定数よりも大きな格子定数
を持つガーネツト結晶の提供を目的とする。
The present invention was made to solve the above-mentioned problems, and aims to provide a garnet crystal having a lattice constant larger than that of conventional gadolinium gallium garnet crystals or gadolinium scandium gallium garnet crystals. .
本発明者らは、前記目的を達成すべく鋭意研究
の結果、従来のガドリニウムガリウムガーネツト
結晶におけるガリウムの一部あるいはガドリニウ
ムスカンジウムガリウムガーネツト結晶における
スカンジウムをルテチウムで置換したようなガー
ネツト結晶ができること、そしてその置換によつ
て格子定数が大きくなることを見出した。
As a result of intensive research to achieve the above object, the present inventors have discovered that a garnet crystal can be produced in which part of the gallium in a conventional gadolinium gallium garnet crystal or the scandium in a gadolinium scandium gallium garnet crystal is replaced with lutetium. We also found that the lattice constant increases with this substitution.
本発明は、この知見に基いてなされたものであ
り、一般式(Gd1-xLux)3(GdyLuzGa1-y-z)2Ga3
O12(ただし、x,y,zはそれぞれ0≦x≦0.4、
0≦y≦0.05、0.6≦z≦1.0の範囲の数値を示す)
で表されるガドリニウムルテチウムガリウムガー
ネツト結晶にある。 The present invention was made based on this knowledge, and has the general formula (Gd 1-x Lu x ) 3 (Gd y Lu z Ga 1-yz ) 2 Ga 3
O 12 (However, x, y, z are each 0≦x≦0.4,
(Indicates numerical values in the range of 0≦y≦0.05, 0.6≦z≦1.0)
It is found in gadolinium lutetium gallium garnet crystals.
本発明のガーネツト結晶は、前記一般式のx,
y,zが所定の範囲にあることによつて単相とし
て格子定数が従来のガーネツト結晶の格子常数よ
りも大きい単結晶を得ることができる。これに対
して、x,y,zが所定の範囲から外れると、ペ
ロブスカイト相などの第二相が生成し単結晶を得
ることはできない。
The garnet crystal of the present invention has the general formula x,
By setting y and z within predetermined ranges, it is possible to obtain a single-phase single crystal whose lattice constant is larger than that of conventional garnet crystals. On the other hand, if x, y, and z deviate from the predetermined range, a second phase such as a perovskite phase is generated and a single crystal cannot be obtained.
実施例 1
ガドリニウム、ルテチウム、ガリウムの酸化物
をGd:Lu:Ga(原子比)=3.0:1.6:3.4になるよ
うに調整した混合物を従来公知の方法で固相反応
させることにより結晶に合成した。得られた結晶
は、X線回折によりガーネツト単相で、格子定数
aがa=12.64Aであることが確認された。
Example 1 A mixture of gadolinium, lutetium, and gallium oxides adjusted to have a Gd:Lu:Ga (atomic ratio) = 3.0:1.6:3.4 was synthesized into crystals by solid-phase reaction using a conventionally known method. . It was confirmed by X-ray diffraction that the obtained crystal had a garnet single phase and a lattice constant a=12.64A.
実施例 2
ガドリニウム、ルテチウム、ガリウムの酸化物
Gd:Lu:Ga(原子比)=2.41:2.3:3.3になるよ
うに調整した混合物を従来公知の方法で溶融固化
させることにより結晶に合成した。これにより得
られた結晶も、X線回折によりガーネツト単相
で、格子定数aがa=12.60Aであることが確認
された。Example 2 Oxides of gadolinium, lutetium, and gallium
A mixture adjusted to have Gd:Lu:Ga (atomic ratio) = 2.41:2.3:3.3 was melted and solidified by a conventionally known method to synthesize crystals. The crystal thus obtained was also confirmed by X-ray diffraction to have a garnet single phase and a lattice constant a=12.60A.
本発明の新組成ガーネツト結晶は、従来のガド
リニウムガリウムガーネツト結晶あるいはガドリ
ニウムスカンジウムガリウムガーネツト結晶に較
べて格子定数が大きいから、磁気光学素子や光熱
磁気記録媒体の単結晶基板あるいは発光材料とし
てきわめて有用である。
The new composition garnet crystal of the present invention has a larger lattice constant than conventional gadolinium gallium garnet crystals or gadolinium scandium gallium garnet crystals, so it is extremely useful as a single crystal substrate for magneto-optical devices and photothermal magnetic recording media, or as a light-emitting material. It is.
Claims (1)
0≦y≦0.05、0.6≦z≦1.0の範囲の数値を示す) で表されるガドリニウムルテチウムガリウムガー
ネツト結晶。[Claims] 1 General formula (Gd 1-x Lu x ) 3 (Gd y Lu z Ga 1-yz ) 2 Ga 3 O 12 (where x, y, and z are each 0≦x≦0.4,
0≦y≦0.05, 0.6≦z≦1.0) Gadolinium lutetium gallium garnet crystal.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27908188A JPH02129096A (en) | 1988-11-04 | 1988-11-04 | Gadolinium lutetium gallium garnet crystal |
US07/429,455 US5043231A (en) | 1988-11-04 | 1989-10-31 | Gadolinium-lutetium-gallium garnet crystal, process for its production and substrate for magneto-optical device made thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27908188A JPH02129096A (en) | 1988-11-04 | 1988-11-04 | Gadolinium lutetium gallium garnet crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02129096A JPH02129096A (en) | 1990-05-17 |
JPH0478594B2 true JPH0478594B2 (en) | 1992-12-11 |
Family
ID=17606150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27908188A Granted JPH02129096A (en) | 1988-11-04 | 1988-11-04 | Gadolinium lutetium gallium garnet crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02129096A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4860368B2 (en) * | 2006-06-27 | 2012-01-25 | 富士フイルム株式会社 | Garnet-type compounds and methods for producing the same |
-
1988
- 1988-11-04 JP JP27908188A patent/JPH02129096A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH02129096A (en) | 1990-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Shafer | Preparation and crystal chemistry of divalent europium compounds | |
Hibst | Hexagonal ferrites from melts and aqueous solutions, magnetic recording materials | |
Vasylechko et al. | Crystal structure of LaGaO3 and (La, Gd) GaO3 solid solutions | |
Vaughey et al. | Synthesis, structure, and properties of LaSrCuGaO5 | |
Toda et al. | Unusual concentration quenching of europium luminescence in new layered perovskite compound, RbLa1− xEuxTa2O7 (0≤ x≤ 1) | |
JPH0478594B2 (en) | ||
AU534871B2 (en) | Polycrystalline garnet | |
US5043231A (en) | Gadolinium-lutetium-gallium garnet crystal, process for its production and substrate for magneto-optical device made thereof | |
JPH01283802A (en) | Strontium ferrite magnet | |
GB1580848A (en) | Calcium-gallium-germanium garnet single crystal | |
JPH0629134B2 (en) | Gadolinium indium gallium garnet | |
Gaviko et al. | X-ray study of the crystal structure of La 1− x Ba x MnO 3 | |
JPH04202095A (en) | Gadolinium-lutetium-scandium-gallium garnet | |
JP2812915B2 (en) | Grain-free manganese oxide-based crystal and magnetoresistive element using the same | |
JP3190038B2 (en) | Garnet crystal for magneto-optical crystal film and method for producing the same | |
Lefebvre et al. | Substituted lanthanum hexagallates as epitaxial growth substrates | |
JP3653764B2 (en) | Method for producing high-concentration bismuth-substituted iron garnet fine particles | |
SU1438921A1 (en) | Method of producing hard magnetic ferrite materials | |
JP2535781B2 (en) | Priderite type compound and its synthesis method | |
Rykov et al. | Quadrupole Interactions and Vibrational Anisotropy of Tetrahedral Fe (Ill) in the" 123" Derivative LnSr, Cu, Ga, _, Fe, O,(Ln= Y, Ho) | |
JPH0513093B2 (en) | ||
JPS5857706A (en) | Permanent magnet for biased field of magnetic bubble memory | |
JPH0424685B2 (en) | ||
JPH0588127A (en) | Magnetic-optical material, its production, and optical element using same | |
Imaeda et al. | Discontinuous Grain Growth and the Grain Boundary in a Solid-Solid Reaction Growth Method for Ferrite Single Crystals |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |