JPH0478594B2 - - Google Patents

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Publication number
JPH0478594B2
JPH0478594B2 JP27908188A JP27908188A JPH0478594B2 JP H0478594 B2 JPH0478594 B2 JP H0478594B2 JP 27908188 A JP27908188 A JP 27908188A JP 27908188 A JP27908188 A JP 27908188A JP H0478594 B2 JPH0478594 B2 JP H0478594B2
Authority
JP
Japan
Prior art keywords
garnet
crystal
gadolinium
gallium
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP27908188A
Other languages
Japanese (ja)
Other versions
JPH02129096A (en
Inventor
Yasuto Myazawa
Shigeyuki Kimura
Nobuhiro Kodama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Original Assignee
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO filed Critical KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority to JP27908188A priority Critical patent/JPH02129096A/en
Priority to US07/429,455 priority patent/US5043231A/en
Publication of JPH02129096A publication Critical patent/JPH02129096A/en
Publication of JPH0478594B2 publication Critical patent/JPH0478594B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気光学素子や光熱磁気記録媒体の
単結晶基板あるいは発光中心になる遷移金属元素
または希土類元素を添加するためのホスト結晶と
して利用し得る新組成のガーネツト結晶に関す
る。
[Detailed Description of the Invention] [Industrial Application Field] The present invention can be used as a single crystal substrate of a magneto-optical element or a photothermal magnetic recording medium, or as a host crystal for doping a transition metal element or a rare earth element that becomes a luminescence center. This paper relates to a new composition of garnet crystals that can be used.

〔従来の技術〕[Conventional technology]

ガーネツト結晶は12面体8配位、8面体6配位
および4面体4配位の3つの異なる原子占有サイ
トを持つている。
Garnet crystals have three different atomic occupancy sites: 8 dodecahedral coordinations, 6 octahedral coordinations, and 4 tetrahedral coordinations.

従来、12面体8配位サイトをガドリニウムが占
め、4面体4配位サイトをガリウムが占めるガー
ネツト結晶としては、ガドリニウムガリウムガー
ネツト結晶(Gd3Ga5O12)およびガドリウムスカ
ンジウムガリウムガーネツト結晶(Gd3Sc2Ga3
O12)が知られている。これら従来のガーネツト
結晶は、格子定数が12.38〜12.56Aの範囲にあり、
磁気光学素子や光熱磁気記録媒体の単結晶基板あ
るいは発光域を広くするためのホスト結晶として
用いた場合、格子定数が小さいために良好な磁気
光学素子等を得にくいと言う問題があつた。
Conventionally, garnet crystals in which gadolinium occupies dodecahedral 8-coordination sites and gallium occupies tetrahedral 4-coordination sites include gadolinium gallium garnet crystal (Gd 3 Ga 5 O 12 ) and gadolinium scandium gallium garnet crystal ( Gd 3 Sc 2 Ga 3
O12 ) is known. These conventional garnet crystals have lattice constants ranging from 12.38 to 12.56A,
When used as a single crystal substrate for a magneto-optical element or a photothermal magnetic recording medium, or as a host crystal for widening the light emitting region, there is a problem in that it is difficult to obtain a good magneto-optical element etc. due to the small lattice constant.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

本発明は、上述の問題を解消するためになされ
たものであり、従来のガドリニウムガリウムガー
ネツト結晶やガドリニウムスカンジウムガリウム
ガーネツト結晶の格子定数よりも大きな格子定数
を持つガーネツト結晶の提供を目的とする。
The present invention was made to solve the above-mentioned problems, and aims to provide a garnet crystal having a lattice constant larger than that of conventional gadolinium gallium garnet crystals or gadolinium scandium gallium garnet crystals. .

〔課題を解決するための手段〕[Means to solve the problem]

本発明者らは、前記目的を達成すべく鋭意研究
の結果、従来のガドリニウムガリウムガーネツト
結晶におけるガリウムの一部あるいはガドリニウ
ムスカンジウムガリウムガーネツト結晶における
スカンジウムをルテチウムで置換したようなガー
ネツト結晶ができること、そしてその置換によつ
て格子定数が大きくなることを見出した。
As a result of intensive research to achieve the above object, the present inventors have discovered that a garnet crystal can be produced in which part of the gallium in a conventional gadolinium gallium garnet crystal or the scandium in a gadolinium scandium gallium garnet crystal is replaced with lutetium. We also found that the lattice constant increases with this substitution.

本発明は、この知見に基いてなされたものであ
り、一般式(Gd1-xLux3(GdyLuzGa1-y-z2Ga3
O12(ただし、x,y,zはそれぞれ0≦x≦0.4、
0≦y≦0.05、0.6≦z≦1.0の範囲の数値を示す)
で表されるガドリニウムルテチウムガリウムガー
ネツト結晶にある。
The present invention was made based on this knowledge, and has the general formula (Gd 1-x Lu x ) 3 (Gd y Lu z Ga 1-yz ) 2 Ga 3
O 12 (However, x, y, z are each 0≦x≦0.4,
(Indicates numerical values in the range of 0≦y≦0.05, 0.6≦z≦1.0)
It is found in gadolinium lutetium gallium garnet crystals.

〔作用〕[Effect]

本発明のガーネツト結晶は、前記一般式のx,
y,zが所定の範囲にあることによつて単相とし
て格子定数が従来のガーネツト結晶の格子常数よ
りも大きい単結晶を得ることができる。これに対
して、x,y,zが所定の範囲から外れると、ペ
ロブスカイト相などの第二相が生成し単結晶を得
ることはできない。
The garnet crystal of the present invention has the general formula x,
By setting y and z within predetermined ranges, it is possible to obtain a single-phase single crystal whose lattice constant is larger than that of conventional garnet crystals. On the other hand, if x, y, and z deviate from the predetermined range, a second phase such as a perovskite phase is generated and a single crystal cannot be obtained.

〔実施例〕〔Example〕

実施例 1 ガドリニウム、ルテチウム、ガリウムの酸化物
をGd:Lu:Ga(原子比)=3.0:1.6:3.4になるよ
うに調整した混合物を従来公知の方法で固相反応
させることにより結晶に合成した。得られた結晶
は、X線回折によりガーネツト単相で、格子定数
aがa=12.64Aであることが確認された。
Example 1 A mixture of gadolinium, lutetium, and gallium oxides adjusted to have a Gd:Lu:Ga (atomic ratio) = 3.0:1.6:3.4 was synthesized into crystals by solid-phase reaction using a conventionally known method. . It was confirmed by X-ray diffraction that the obtained crystal had a garnet single phase and a lattice constant a=12.64A.

実施例 2 ガドリニウム、ルテチウム、ガリウムの酸化物
Gd:Lu:Ga(原子比)=2.41:2.3:3.3になるよ
うに調整した混合物を従来公知の方法で溶融固化
させることにより結晶に合成した。これにより得
られた結晶も、X線回折によりガーネツト単相
で、格子定数aがa=12.60Aであることが確認
された。
Example 2 Oxides of gadolinium, lutetium, and gallium
A mixture adjusted to have Gd:Lu:Ga (atomic ratio) = 2.41:2.3:3.3 was melted and solidified by a conventionally known method to synthesize crystals. The crystal thus obtained was also confirmed by X-ray diffraction to have a garnet single phase and a lattice constant a=12.60A.

〔発明の効果〕〔Effect of the invention〕

本発明の新組成ガーネツト結晶は、従来のガド
リニウムガリウムガーネツト結晶あるいはガドリ
ニウムスカンジウムガリウムガーネツト結晶に較
べて格子定数が大きいから、磁気光学素子や光熱
磁気記録媒体の単結晶基板あるいは発光材料とし
てきわめて有用である。
The new composition garnet crystal of the present invention has a larger lattice constant than conventional gadolinium gallium garnet crystals or gadolinium scandium gallium garnet crystals, so it is extremely useful as a single crystal substrate for magneto-optical devices and photothermal magnetic recording media, or as a light-emitting material. It is.

Claims (1)

【特許請求の範囲】 1 一般式 (Gd1-xLux3(GdyLuzGa1-y-z2Ga3O12 (ただし、x,y,zはそれぞれ0≦x≦0.4、
0≦y≦0.05、0.6≦z≦1.0の範囲の数値を示す) で表されるガドリニウムルテチウムガリウムガー
ネツト結晶。
[Claims] 1 General formula (Gd 1-x Lu x ) 3 (Gd y Lu z Ga 1-yz ) 2 Ga 3 O 12 (where x, y, and z are each 0≦x≦0.4,
0≦y≦0.05, 0.6≦z≦1.0) Gadolinium lutetium gallium garnet crystal.
JP27908188A 1988-11-04 1988-11-04 Gadolinium lutetium gallium garnet crystal Granted JPH02129096A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP27908188A JPH02129096A (en) 1988-11-04 1988-11-04 Gadolinium lutetium gallium garnet crystal
US07/429,455 US5043231A (en) 1988-11-04 1989-10-31 Gadolinium-lutetium-gallium garnet crystal, process for its production and substrate for magneto-optical device made thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27908188A JPH02129096A (en) 1988-11-04 1988-11-04 Gadolinium lutetium gallium garnet crystal

Publications (2)

Publication Number Publication Date
JPH02129096A JPH02129096A (en) 1990-05-17
JPH0478594B2 true JPH0478594B2 (en) 1992-12-11

Family

ID=17606150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27908188A Granted JPH02129096A (en) 1988-11-04 1988-11-04 Gadolinium lutetium gallium garnet crystal

Country Status (1)

Country Link
JP (1) JPH02129096A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4860368B2 (en) * 2006-06-27 2012-01-25 富士フイルム株式会社 Garnet-type compounds and methods for producing the same

Also Published As

Publication number Publication date
JPH02129096A (en) 1990-05-17

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