JPH0478388A - Valve device - Google Patents
Valve deviceInfo
- Publication number
- JPH0478388A JPH0478388A JP19259390A JP19259390A JPH0478388A JP H0478388 A JPH0478388 A JP H0478388A JP 19259390 A JP19259390 A JP 19259390A JP 19259390 A JP19259390 A JP 19259390A JP H0478388 A JPH0478388 A JP H0478388A
- Authority
- JP
- Japan
- Prior art keywords
- valve
- valve seat
- valve body
- electromagnet
- seat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000696 magnetic material Substances 0.000 claims description 13
- 239000012530 fluid Substances 0.000 abstract description 14
- 239000007789 gas Substances 0.000 description 14
- 238000010926 purge Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Magnetically Actuated Valves (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、弁装置に関し、特に迅速な開閉作動と多数回
の開閉操作を必要とする装置、例えば原子層エピタキシ
ャル成長（＾ｔｏｍｌｃ Ｌａｙｅｒ Ｐ、ｐｉＬａｘ
ｙＡＬＥ）装置に使用するのに適した弁装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to valve devices, and in particular to devices that require quick opening/closing operations and multiple opening/closing operations, such as atomic layer epitaxial growth (^tomlc Layer P, piLax).
The present invention relates to a valve device suitable for use in a yALE) device.
ＡＬＥは、極薄膜の量子効果を利用した半導体素子用の
結晶成長技術として、近年注目を集めている。ALE has attracted attention in recent years as a crystal growth technology for semiconductor devices that utilizes the quantum effect of ultra-thin films.
ここで、第５図に示す一般的なＡＬＥ装置を用いてガリ
ウム／上素（ＧａＡｓ）の薄膜を成長させる場合につい
て説明する。Here, a case will be described in which a gallium/silicon (GaAs) thin film is grown using a general ALE apparatus shown in FIG.
上記ＧａＡｓのＡＬＥを行う場合は、現在、トノメチル
ガリウム（ＴＭＧ）とアルシンとが原料として用いられ
ており、このＴＭＧとアルシンとを、それぞれの流量制
御器１ａ、ｌｂて流量を調節するとともに、切換弁２ａ
、２ｂの切換えにより、その一方を、キャリアガスライ
ン３に供給されるキャリアガスに同伴させて反応炉４に
供給し、他方を、パージガスライン５に供給されるパー
ジガスに同伴させて排気ポンプ６に排出する。そして反
応炉４に供給した原料ガスが、基板７上に生成する膜が
略−原子層成長に相当する量に達したときに、前記切換
弁２ａ、２ｂを切換えて他方の原料ガスを反応炉４に供
給し、交互に略−原子層ずつ成長させる。When performing the above-mentioned ALE of GaAs, tonomethyl gallium (TMG) and arsine are currently used as raw materials, and the flow rates of TMG and arsine are adjusted using respective flow rate controllers 1a and 1b. Switching valve 2a
, 2b, one of them is supplied to the reactor 4 along with the carrier gas supplied to the carrier gas line 3, and the other is supplied to the exhaust pump 6 along with the purge gas supplied to the purge gas line 5. Discharge. When the raw material gas supplied to the reactor 4 reaches an amount equivalent to approximately atomic layer growth of the film formed on the substrate 7, the switching valves 2a and 2b are switched to supply the other raw material gas to the reactor. 4 and alternately grow approximately -atomic layers at a time.
従って、デバイス作成に必要な数１．０００ Ａから数
ミクロンの厚さの層を成長させるためには、−回の成長
において数１０００回の切換弁の開閉を必要とする。そ
のため、この切換弁の開閉制御には、コンピューターが
使用されている。Therefore, in order to grow a layer with a thickness of several 1,000 A to several microns required for device fabrication, it is necessary to open and close the switching valve several thousand times in - times of growth. Therefore, a computer is used to control the opening and closing of this switching valve.
ここで、従来のＡＬＥ装置は、基本的に有機金属気相成
長法（ＭＯＶＰＥ）又はその他の気相成長法において開
発された原料供給装置を利用してきた。そのため、上記
切換弁としても、例えば第６図に示す構造の弁が用いら
れていた。Here, conventional ALE apparatuses have basically utilized raw material supply apparatuses developed in metal organic vapor phase epitaxy (MOVPE) or other vapor phase epitaxy methods. Therefore, for example, a valve having the structure shown in FIG. 6 has been used as the switching valve.
第６図に示す弁は、アクチュエーター１０への空気圧の
供給によりダイヤフラム１１及びロッド１２がバネ１３
の力に抗して押し下げられ、ロッド先端の弁シート１４
が弁座１５に押付けられて弁の閉動作が行われる。また
、アクチュエーター１０への空気圧を取り除くとバネ１
３の力でロッド１２が押し上げられ、弁シート１４が弁
座１５から離れて弁の開動作が行われる。この際、弁の
内部を気密に保ちつつ弁シート１４を上下動させるため
、ダイヤフラム１１や金属ベローズ１６が用いられてい
る。また、作動源として電磁力を利用したものも、作動
原理は上記と同様であり、いずれにしても、弁体の外部
に設けたアクチュエーターの作動力を、気密保持と運動
導入の目的を持ったダイヤフラムやベローズ等を介して
弁シートに伝える構造を有している。In the valve shown in FIG. 6, a diaphragm 11 and a rod 12 are connected to a spring 13 by supplying air pressure to an actuator 10.
The valve seat 14 at the tip of the rod is pushed down against the force of
is pressed against the valve seat 15, and the valve is closed. Also, if the air pressure to the actuator 10 is removed, the spring 1
The rod 12 is pushed up by the force of 3, the valve seat 14 is separated from the valve seat 15, and the valve is opened. At this time, a diaphragm 11 and a metal bellows 16 are used to move the valve seat 14 up and down while keeping the inside of the valve airtight. In addition, the operating principle for those that use electromagnetic force as the operating source is the same as above, and in any case, the operating force of the actuator installed outside the valve body is used to maintain airtightness and introduce motion. It has a structure in which the information is transmitted to the valve seat via a diaphragm, bellows, etc.
しかしながら、上記ＡＬＥ装置で製造するＡＬＥ成長層
をデバイスに応用するときには、通常］０００Ａ以上の
膜厚を必要とするので、原料ガスを一原子層ずつ供給す
ることに起因して弁の開閉回数が非常に多くなる。例え
ば、１ミクロンのＡＬＥ層を成長させるためには、およ
そ３０００回の弁の開閉を必要とする。ところか、上述
の弁構造において、ダイヤフラムやベローズ等の耐久性
能は、一般に１０万回程度であるので、ＡＬＥ装置に上
記構造の弁を用いると、わずか３０回の薄膜成長しか行
えないことになる。However, when applying the ALE grown layer produced by the above ALE apparatus to a device, a film thickness of 000A or more is usually required, so the number of opening and closing of the valve is reduced due to supplying the raw material gas one atomic layer at a time. It becomes very large. For example, approximately 3000 valve openings and closings are required to grow a 1 micron ALE layer. However, in the above-mentioned valve structure, the durability of the diaphragm, bellows, etc. is generally about 100,000 cycles, so if a valve with the above structure is used in an ALE device, thin film growth can only be performed 30 times. .
そこで、本発明は、開閉の耐久性を飛躍的に向上させる
ことのできる弁装置を提供することを目的としている。Therefore, an object of the present invention is to provide a valve device that can dramatically improve the durability of opening and closing.
上記した目的を達成するために、本発明の弁装置は、非
磁性体でなる弁箱内に、弁座を開閉可能な磁性体または
磁石でなる弁体を移動可能に収納するとともに、弁箱の
外部に、前記弁体を弁座の開閉方向に移動させる磁石ま
たは磁性体でなる駆動部を配設したことを特徴としてい
る。In order to achieve the above-mentioned object, the valve device of the present invention movably houses a valve body made of a magnetic material or a magnet that can open and close a valve seat in a valve box made of a non-magnetic material. The present invention is characterized in that a drive section made of a magnet or a magnetic material is disposed outside the valve body to move the valve body in the opening/closing direction of the valve seat.
弁箱を非磁性体で形成したので、弁体及び駆動部の一方
を磁性体で、他方を磁石で構成することにより、弁箱の
内部に磁界を形成することができる。従って、例えば弁
体を鉄等の磁性体で、また、駆動部を磁石で構成するこ
とにより、駆動部が永久磁石の場合は駆動部の移動によ
り、駆動部が電磁石の場合は励磁することにより、弁箱
内の弁体を弁座の開閉方向に移動して流路をｎｒＱ Ｈ
できるとともに、ダイヤフラムやベローズ等の変形運動
部材を使用していないので、耐久性を大幅に向上できる
。Since the valve box is made of a non-magnetic material, a magnetic field can be created inside the valve box by making one of the valve body and the driving section a magnetic material and the other a magnet. Therefore, for example, by configuring the valve body with a magnetic material such as iron and the drive unit with a magnet, if the drive unit is a permanent magnet, the drive unit can be moved, or if the drive unit is an electromagnet, it can be energized. , move the valve body in the valve box in the opening/closing direction of the valve seat to open the flow path nrQ H
In addition, since no deformable movement members such as diaphragms or bellows are used, durability can be greatly improved.
以下、本発明を図面に示す実施例に基づいて、さらに詳
細に説明する。Hereinafter, the present invention will be explained in more detail based on embodiments shown in the drawings.
まず、第１図は、本発明の第１実施例を示すもので、本
発明を一般の開閉弁に適用したしのである。First, FIG. 1 shows a first embodiment of the present invention, in which the present invention is applied to a general on-off valve.
弁箱２０は、略円筒状に形成されており、その下部には
、該弁箱２０の内径より小さな径の弁座２１が設けられ
、弁箱２０内には、弁箱２０の内径より小さく、弁座２
１の径よりも大きな径を有する球形の弁体２２が弁座２
１を開閉可能に、かつ弁箱２０内周との間に流体の流路
を形成できるように収納されている。The valve box 20 is formed into a substantially cylindrical shape, and a valve seat 21 having a diameter smaller than the inner diameter of the valve box 20 is provided at the lower part thereof. , valve seat 2
A spherical valve body 22 having a diameter larger than that of the valve seat 2
1 is housed so as to be openable and closable and to form a fluid flow path between it and the inner periphery of the valve box 20.
上記弁箱２０は、例えば５ＬＩＳ３０４，５ＵＳ３］６
等の非磁性のステンレススチールや非磁性のセラミック
ス等の非磁性体により形成される。The valve box 20 is, for example, 5LIS304, 5US3]6
It is made of non-magnetic materials such as non-magnetic stainless steel and non-magnetic ceramics.
また、弁体２２は、上記弁座２１に密着して弁座２１を
閉塞する弁シート２２ａの内部に磁性体２２ｂを埋め込
んだもので、弁シート２２ａの材質としては、適宜な材
質、例えば各種樹脂、金属を用いることができる。また
、弁体２２全体を磁性体で形成してもよい。Further, the valve body 22 has a magnetic material 22b embedded inside a valve seat 22a that closely contacts the valve seat 21 and closes the valve seat 21. The valve seat 22a may be made of an appropriate material, such as various materials. Resin and metal can be used. Further, the entire valve body 22 may be formed of a magnetic material.
また、上記弁座２１には流体入口管２３が接続され、弁
箱２０の上部側方には流体出口管２４が接続されている
。さらに弁箱２０の外部には、その上下にリング状の電
磁石２５ａ、２５ｂが配設されている。Further, a fluid inlet pipe 23 is connected to the valve seat 21, and a fluid outlet pipe 24 is connected to the upper side of the valve box 20. Furthermore, ring-shaped electromagnets 25a and 25b are disposed on the top and bottom of the outside of the valve box 20.
このように弁装置を構成することにより、いずれか一方
の電磁石、例えば上部の電磁石２５ａに通電して該電磁
石２５ａを励磁することにより、該電磁石２５ａに弁体
２２が吸引され、第１図に示す状態となり、弁をの開状
態とする。逆に下部の電磁石２５ｂに通電すると、弁体
２２が下方に移動して弁座２１に着座し、弁が閉じ状態
となる。By configuring the valve device in this way, by energizing one of the electromagnets, for example, the upper electromagnet 25a, to excite the electromagnet 25a, the valve body 22 is attracted to the electromagnet 25a, and as shown in FIG. The valve will be in the open state. Conversely, when the lower electromagnet 25b is energized, the valve body 22 moves downward and seats on the valve seat 21, and the valve is in a closed state.
即ち、上下の電磁石２５ａ、２５ｂへの通電を切換える
だけで弁の開閉を行うことができ、弁箱２０内の弁体２
２以外には動きを生じないので弁の開閉により疲労する
部分がなく、該弁体２２と弁座２１の離接が耐久性を決
定する大きな要因になる。そのため、この弁体２２と弁
座２１の材質を適当に選定すれば半永久的に使用するこ
とも可能となり、開閉の耐久性を飛躍的に向上させるこ
とかできる。さらに、運動部分が弁体２２のみであり、
ロッド等を必要としないので、運動部分の質量を小さく
でき、弁の高速開閉が可能になる。That is, the valve can be opened and closed simply by switching the energization to the upper and lower electromagnets 25a and 25b, and the valve body 2 in the valve box 20
Since there is no movement other than 2, there is no part that gets fatigued by opening and closing of the valve, and the contact and separation between the valve body 22 and the valve seat 21 is a major factor in determining durability. Therefore, if the materials of the valve body 22 and the valve seat 21 are appropriately selected, they can be used semi-permanently, and the durability of opening and closing can be dramatically improved. Furthermore, the only moving part is the valve body 22,
Since rods and the like are not required, the mass of the moving parts can be reduced and the valve can be opened and closed at high speed.
尚、電磁石２５ａ、２５ｂは弁箱２０に埋め込むことも
てき、電磁石に代えて磁石を設け、該磁石を弁体２２の
開閉方向に移動させるようにしても良い。また、第１図
では、弁箱２０の上下に電磁石を設けているが、流体入
口管２３を流体の出口管とするときは、弁体２２の自重
で弁座２１を閉塞することができ、電磁石を一つとする
こともてきる。また、弁箱２０及び流体出入口管２３．
２４等の形状や位置を、適宜に設定すれば、弁体２２を
横方向に移動させて弁の開閉を行うこともでき、様々な
態様が考えられる。Note that the electromagnets 25a and 25b may be embedded in the valve box 20, or a magnet may be provided in place of the electromagnet and the magnet may be moved in the opening/closing direction of the valve body 22. Further, in FIG. 1, electromagnets are provided above and below the valve box 20, but when the fluid inlet pipe 23 is used as a fluid outlet pipe, the valve seat 21 can be closed by the weight of the valve body 22. It is also possible to use only one electromagnet. Also, the valve box 20 and the fluid inlet/outlet pipe 23.
If the shape and position of 24 and the like are set appropriately, the valve body 22 can be moved laterally to open and close the valve, and various embodiments are possible.
次に、第２図乃至第４図は、本発明の第２実施例を示す
もので、流路を２系統に切換えらる切換弁に本発明を適
用した例を示すものである。Next, FIGS. 2 to 4 show a second embodiment of the present invention, and show an example in which the present invention is applied to a switching valve that switches the flow path between two systems.
筒状に形成された弁箱３０には、その中央部側方に流体
人口管３１が接続され、上下両端部には、第１導管３２
に連通ずる第１弁座３３と第２導管３４に連通ずる第２
弁座３５とが設けられている。A fluid manifold pipe 31 is connected to the cylindrical valve box 30 on the sides of its center, and a first conduit 32 is connected to the upper and lower ends of the valve box 30.
The first valve seat 33 communicates with the second valve seat 33 and the second valve seat 33 communicates with the second conduit 34.
A valve seat 35 is provided.
そして、弁箱３０内には、磁性体３６ａを埋め込んだ弁
体３６が移動可能に収納され、弁箱３０の外部には、上
下にそれぞれ弁体駆動用の電磁石３７ａ、３７ｂが配設
されている。A valve body 36 in which a magnetic material 36a is embedded is movably housed in the valve box 30, and electromagnets 37a and 37b for driving the valve bodies are arranged on the upper and lower sides of the outside of the valve body 30, respectively. There is.
本実施例の弁装置は、上部の電磁石３７ａに通電して該
電磁石３７ａを励磁すると、該電磁石３７ａに弁体３６
が吸引されて第１弁座３３が閉じられ、流体入口管３１
から弁箱３０内に流入した流体は、第２弁座３５を経て
第２導管３４に流出する。逆に下部の電磁石３７ｂに通
電すると、該電磁石３７ｂに弁体３６が吸引されて第２
弁座３５が閉じられ、流体が第１弁座３３から第１導管
３２に流出する。また、上下の両型磁石３７ａ。In the valve device of this embodiment, when the upper electromagnet 37a is energized to excite the electromagnet 37a, the valve body 36
is suctioned, the first valve seat 33 is closed, and the fluid inlet pipe 31
The fluid that has flowed into the valve body 30 through the second valve seat 35 flows out into the second conduit 34 . Conversely, when the lower electromagnet 37b is energized, the valve body 36 is attracted to the electromagnet 37b and the second
Valve seat 35 is closed and fluid flows from first valve seat 33 into first conduit 32 . Also, upper and lower double-type magnets 37a.
３７ｂを適当な磁力に設定しておけば、第３図に示すよ
うに両弁座３３．３５を開いた状態に保持させることも
できる。さらに、流体人口管３１部分にも弁座を形成し
、この弁座方向に弁体を吸引するような電磁石を設けて
おけば、流体入口管３】の閉塞も行うことができ、三方
弁も容易に形成することができる。If 37b is set to a suitable magnetic force, both valve seats 33, 35 can be held in an open state as shown in FIG. Furthermore, by forming a valve seat in the fluid manifold pipe 31 and providing an electromagnet that attracts the valve body in the direction of this valve seat, the fluid inlet pipe 3] can be closed, and the three-way valve can also be closed. Can be easily formed.
第４図は、上記弁装置を前述のＡＬＥ装置に使用したも
ので、一方の弁４０ａは、ＴＭＧ導入用に、他方の弁４
０ｂはアルシン導入用に用いられ、それぞれの流体入口
管３１がそれぞれの流量制御器４１ｇ、４１ｂに接続さ
れ、第１導管３２がキャリアガス導管４２、第２導管３
４がパージガスライン４３に対応している。FIG. 4 shows the above-mentioned valve device used in the above-mentioned ALE device, in which one valve 40a is used for introducing TMG, and the other valve 40a is used for introducing TMG.
0b is used for introducing arsine, each fluid inlet pipe 31 is connected to each flow controller 41g, 41b, the first conduit 32 is connected to the carrier gas conduit 42, the second conduit 3
4 corresponds to the purge gas line 43.
運転にあたっては、排気ポンプ４４を駆動して反応炉４
５．キャリアガス導管４２．パージガスライン４３の排
気を行うとともに、キャリアガス導管４２．パージガス
ライン４３にそれぞれキャリアガスとパージガスとを流
通し、圧力計４６の指示により調節弁４７を開閉して反
応炉４５内を所定の圧力に保持し、さらに差圧計４８の
指示により調節弁４９を開閉してキャリアガス導管４２
とパージガスライン４３の間の圧力差が数トール以下に
なるように調節する。During operation, the exhaust pump 44 is driven to exhaust the reactor 4.
5. Carrier gas conduit 42. While evacuating the purge gas line 43, the carrier gas conduit 42. A carrier gas and a purge gas are passed through the purge gas lines 43 respectively, and the control valve 47 is opened and closed according to the instructions from the pressure gauge 46 to maintain the inside of the reactor 45 at a predetermined pressure. Open and close carrier gas conduit 42
The pressure difference between the purge gas line 43 and the purge gas line 43 is adjusted to be several torr or less.
このように圧力差を設定することにより、両弁４０ａ、
４０ｂの弁座３３，３５の閉動作における気密保持力は
、数トールの圧力に耐えられる力で良くなるとともに、
原料ガスの切換えの際の圧力変動も小さくなり、原料ガ
スを安定して反応炉４５に供給することができる。By setting the pressure difference in this way, both valves 40a,
The airtightness in the closing operation of the valve seats 33 and 35 of 40b is good with a force that can withstand several torr of pressure, and
Pressure fluctuations at the time of switching the raw material gas are also reduced, and the raw material gas can be stably supplied to the reactor 45.
そして、弁装置の上下の電磁石３７ａ、３７ｂに、両弁
４０ａ、４０ｂで位相を変えて交互に通電することによ
り、両原料ガスを交互に反応炉４５に供給することがで
きる。このとき、弁の開閉にかかる圧力差が小さいので
、僅かな力で確実に開閉できるため、弁の開閉に伴って
弁体３６や弁座３３，３５に加わる衝撃が小さく、これ
らが破損するおそれはほとんど無く、しかも僅かな電力
で迅速に開閉することができる。Then, by alternately energizing the upper and lower electromagnets 37a and 37b of the valve device while changing the phase between the valves 40a and 40b, both raw material gases can be alternately supplied to the reactor 45. At this time, since the pressure difference applied when opening and closing the valve is small, the valve can be opened and closed reliably with a small amount of force, so the impact applied to the valve body 36 and valve seats 33 and 35 as the valve opens and closes is small, so there is no risk of damaging these. It requires almost no electricity and can be opened and closed quickly with very little electricity.
以上説明したように、本発明の弁装置は、弁箱内の弁体
を磁力によって移動させて弁の開閉を行うようにしたか
ら、繰り返して使用して疲労破壊する部分が無いので、
多数回の開閉に対しての寿命が大幅に改善される。また
、弁の開閉時に運動する部分の質量を小さくてきるので
、弁の高速開閉が可能となり、正確な開閉制御を行うこ
とかできる。As explained above, since the valve device of the present invention opens and closes the valve by moving the valve body in the valve box using magnetic force, there is no part that will break due to fatigue due to repeated use.
The lifespan is significantly improved against multiple openings and closings. Furthermore, since the mass of the parts that move when the valve is opened and closed can be reduced, the valve can be opened and closed at high speed, and accurate opening and closing control can be performed.
従って、本発明の弁装置は、ＡＬＥ装置の弁のように、
多数回の開閉作動を必要とする弁に最適であり、良質な
ＡＬＥ成長層を製造することができる。Therefore, the valve device of the present invention, like the valve of an ALE device,
It is ideal for valves that require multiple opening and closing operations, and can produce high-quality ALE growth layers.
第１図は本発明の第１実施例を示す弁装置の断面図、第
２図乃至第４図は本発明の第２実施例を示すもので、第
２図は弁装置の斜視図、第３図は同じく断面図、第４図
はＡＬＥ装置の系統図、第５図は従来のＡＬＥ装置の一
例を示す系統図、第６図は従来のＡＬＥ装置に使用され
る弁の一例を示す断面図である。
２０．３０・・・弁箱 ２１・・弁座 ２２，３６
・・・弁体 ２２ａ、３６ａ・・・磁性体 ２５ａ
。
２５ ｂ 、 ３７ ａ 、 ３７ ｂ−−−電磁
石 ３３−・・第１弁座 ３５・・・第２弁座
声１圏
カ２円
■Fig. 1 is a sectional view of a valve device showing a first embodiment of the present invention, Figs. 2 to 4 show a second embodiment of the invention, and Fig. 2 is a perspective view of the valve device; Figure 3 is a sectional view, Figure 4 is a system diagram of an ALE device, Figure 5 is a system diagram showing an example of a conventional ALE device, and Figure 6 is a cross section showing an example of a valve used in a conventional ALE device. It is a diagram. 20.30...Valve box 21...Valve seat 22,36
...Valve body 22a, 36a...Magnetic body 25a
. 25 b, 37 a, 37 b---Electromagnet 33---First valve seat 35...Second valve seat voice 1 area 2 yen■
Claims (1)
または磁石でなる弁体を移動可能に収納するとともに、
弁箱の外部に、前記弁体を弁座の開閉方向に移動させる
磁石または磁性体でなる駆動部を配設したことを特徴と
する弁装置。 ２、前記弁箱の外部に配設した磁石が電磁石であること
を特徴とする請求項１記載の弁装置。[Claims] 1. A valve body made of a magnetic material or a magnet that can open and close the valve seat is movably housed in a valve box made of a non-magnetic material, and
A valve device characterized in that a drive unit made of a magnet or a magnetic material is disposed outside a valve box to move the valve body in the opening/closing direction of a valve seat. 2. The valve device according to claim 1, wherein the magnet disposed outside the valve box is an electromagnet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19259390A JPH0478388A (en) | 1990-07-20 | 1990-07-20 | Valve device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19259390A JPH0478388A (en) | 1990-07-20 | 1990-07-20 | Valve device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0478388A true JPH0478388A (en) | 1992-03-12 |
Family
ID=16293857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19259390A Pending JPH0478388A (en) | 1990-07-20 | 1990-07-20 | Valve device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0478388A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002151489A (en) * | 2000-08-11 | 2002-05-24 | Tokyo Electron Ltd | Substrate processing apparatus and processing method |
| JP2005164025A (en) * | 2003-11-10 | 2005-06-23 | Ckd Corp | Fluid control valve |
| JP2006203208A (en) * | 2005-01-19 | 2006-08-03 | Samsung Electronics Co Ltd | Manufacturing apparatus of semiconductor element having four-way valve, controlling method of valve of the manufacturing apparatus of semiconductor element, and manufacturing method of semiconductor element using the same |
| JP2013064484A (en) * | 2011-09-20 | 2013-04-11 | Riido:Kk | Flow path shut-off device and beverage server system with the device |
-
1990
- 1990-07-20 JP JP19259390A patent/JPH0478388A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002151489A (en) * | 2000-08-11 | 2002-05-24 | Tokyo Electron Ltd | Substrate processing apparatus and processing method |
| JP2005164025A (en) * | 2003-11-10 | 2005-06-23 | Ckd Corp | Fluid control valve |
| JP2006203208A (en) * | 2005-01-19 | 2006-08-03 | Samsung Electronics Co Ltd | Manufacturing apparatus of semiconductor element having four-way valve, controlling method of valve of the manufacturing apparatus of semiconductor element, and manufacturing method of semiconductor element using the same |
| US9029244B2 (en) | 2005-01-19 | 2015-05-12 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
| US9406502B2 (en) | 2005-01-19 | 2016-08-02 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
| US9702041B2 (en) | 2005-01-19 | 2017-07-11 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
| JP2013064484A (en) * | 2011-09-20 | 2013-04-11 | Riido:Kk | Flow path shut-off device and beverage server system with the device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4690371A (en) | Electromagnetic valve with permanent magnet armature | |
| US5400824A (en) | Microvalve | |
| JP3619032B2 (en) | Vacuum pressure control valve | |
| AU584858B2 (en) | Fluid-flow isolation and control apparatus and method | |
| US20040237895A1 (en) | Magnetically-actuatable throttle valve | |
| JPH05251350A (en) | Particulate reducing system in manufacturing of semiconductor | |
| AU2011201570A1 (en) | Pneumatically actuated valve | |
| JP2007509286A (en) | High flow micro valve | |
| EP1679460B1 (en) | Valve | |
| JPH0478388A (en) | Valve device | |
| US20090277586A1 (en) | Gas Introducing Apparatus, Manufacturing Method for the Gas Introducing Apparatus and Processing Apparatus | |
| US4773445A (en) | Solenoid valve | |
| JPH0989146A (en) | Solenoid valve mechanism | |
| JP2570615Y2 (en) | Etchant gas trace supply equipment for dry etching equipment | |
| JP3681463B2 (en) | Pressure reducing valve | |
| US20230001529A1 (en) | Vacuum machining system having a process chamber with a vacuum regulating valve | |
| KR102323804B1 (en) | mass flow controller | |
| JP2687213B2 (en) | Fluid powder control valve | |
| JPH0599359A (en) | Flow regulating valve and flow control method | |
| US3485268A (en) | Pressure operated expansion valve | |
| JP2021134909A (en) | Solenoid valve, flow rate controller, fluid controller and semiconductor manufacturing device | |
| JPH03205395A (en) | Gas molecular beam valve | |
| JP2005249175A (en) | Opening and closing valve | |
| KR100446163B1 (en) | two valve | |
| JP3172834B2 (en) | Gas introduction device in gas source MBE |