JPH047815A - Vertical stepper - Google Patents

Vertical stepper

Info

Publication number
JPH047815A
JPH047815A JP2107648A JP10764890A JPH047815A JP H047815 A JPH047815 A JP H047815A JP 2107648 A JP2107648 A JP 2107648A JP 10764890 A JP10764890 A JP 10764890A JP H047815 A JPH047815 A JP H047815A
Authority
JP
Japan
Prior art keywords
wafer
mask
laser
gas
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2107648A
Other languages
Japanese (ja)
Inventor
Fumio Tabata
文夫 田畑
Hidenori Sekiguchi
英紀 関口
Toru Kamata
徹 鎌田
Yuji Sakata
裕司 阪田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2107648A priority Critical patent/JPH047815A/en
Publication of JPH047815A publication Critical patent/JPH047815A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enable the precise stage position to be measured constantly by a method wherein a gas leakage cut off means is arranged in the route of laser beams emitted from a laser interference type position measuring instrument. CONSTITUTION:A gas leakage cutting-off means 11 comprising a cylindrical sealing material seals up a stage movable part 1 including a wafer chuck and a fixing base 3. The position of a wafer 101 (or a mask 103) during exposure step is measured by the laser beams 102 emitted from a laser interference type measuring instrument 104. At this time, the gas (inert gas) filling up the atmosphere encircling the mask 103 and the wafer 101 is cut off by said cutting off means 11 not to leak out in the laser pass side. Through these procedures, the laser pass will not be disturbed by the insert gas thereby enabling the precise stage position to be measured constantly.

Description

【発明の詳細な説明】 〔概 要〕 シンクロトロン放射光を光源として、マスク上に描かれ
たLSIパターンをウェハ上に露光、転写するための縦
型ステッパに関し、 レーザ干渉式位置測定器により常に正確なステージ位置
を計測できるようにすることを目的とし、マスク上に描
かれた回路パターンをウェハ上に露光、転写する際に用
いられ、露光用光源にシンクロトロン放射光を使用する
とともに、前記マスクと前記ウェハを取り囲む雰囲気中
に特定の気体を充満させる機構と、前記マスクあるいは
前記ウェハの位置を検出するレーザ干渉式位置測定器と
を備えた縦型ステッパにおいて、前記位置測定器のレー
ザ光が通過する経路中に前記特定の気体が漏れないよう
にするための気体漏れ遮断手段を設けた構成とする。
[Detailed Description of the Invention] [Summary] This invention relates to a vertical stepper that uses synchrotron radiation light as a light source to expose and transfer an LSI pattern drawn on a mask onto a wafer. It is used to expose and transfer the circuit pattern drawn on the mask onto the wafer, with the aim of making it possible to accurately measure the stage position. Synchrotron radiation is used as the exposure light source, and the In a vertical stepper equipped with a mechanism for filling an atmosphere surrounding a mask and the wafer with a specific gas, and a laser interferometric position measuring device for detecting the position of the mask or the wafer, the laser beam of the position measuring device is The configuration is such that a gas leakage blocking means is provided to prevent the specific gas from leaking into the path through which the gas passes.

〔産業上の利用分野] 本発明は、シンクロトロン放射光(以下SORと略称)
と光源として、マスク上に描かれたLSIパターンをウ
ェハ上に露光、転写するための縦型ステッパに関するも
のである。
[Industrial Application Field] The present invention is directed to synchrotron radiation (hereinafter abbreviated as SOR).
The invention relates to a vertical stepper used as a light source to expose and transfer an LSI pattern drawn on a mask onto a wafer.

近年、64Mビット以上のD RA M (Dynam
icRandom Access Memory)に代
表される高集積度LSIを置屋する手段として、SOR
による露光転写方式が注目されている。この露光方式は
、従来の紫夕1線Cg線51線)を使用してパターンの
転写を行う方式と比較し2て1.■光源の強度が大きい
ため、スルー・プツトが大きい、■光源に波長の短いX
iを用い2・ため1.サブミクロンの幅を持つパターン
の転写が可能である、■光源の平行性が良いため、マフ
、・り、!ウェハの間隔を合わせることが比較的各町び
する1、等の特徴を持っている。
In recent years, DRAM (Dynam
As a means of storing highly integrated LSIs such as icRandom Access Memory), SOR
The exposure transfer method based on the method is attracting attention. This exposure method has 2 points compared to the conventional method of transferring a pattern using Shiyu 1 line Cg line 51 lines). ■The light source has a high intensity, so the throughput is large. ■The light source has a short wavelength
Using i, 2. Save 1. It is possible to transfer patterns with sub-micron widths. ■Because the light source has good parallelism, it can be used as a muff! It has the characteristics that adjusting the spacing between the wafers makes each area relatively larger.

このS ORJ、;Tよる露光は通常大気中で行われる
が、SORによりマスクあるいばウェハが大気中の酩累
と反応4起こしてマスク白濁等の不都合を生ずるため1
、マスクとウェハを取り囲む露光雰囲気をト1.4や)
16等の不活性ガスで充満する手段が必要である。
This SORJ,;T exposure is normally performed in the atmosphere, but due to SOR, the mask or wafer reacts with the intoxication in the atmosphere, causing problems such as clouding of the mask.
, the exposure atmosphere surrounding the mask and wafer (T1.4)
A means of filling with an inert gas such as 16 is required.

〔従来の技術〕 従来のSOR使用縦型ステッパにおいては、クオータミ
ラし1ンのパターン幅を持つパターンの露光転写を目標
にしているため、マスクとウェハの面内相対位置を10
万分の1nuaの暗度で合わせなければならない。この
ため、ステー・ジの位置を検出する手段とし゛し、第6
図に示すように、微動XY軸ステージにおいて、ウェハ
101を保持するウェハチャックを含むステージ可動部
】と連動する平面ミラー2にレーザ干渉式位置測定器1
04からの1ノーザビーム102を照射し、その反射光
の干渉を利用してステージの位置を検出する高精度位置
検出方式が用いられている。
[Prior art] In a conventional vertical stepper using SOR, the target is exposure transfer of a pattern with a quarter mirror pattern width of 1 inch, so the in-plane relative position of the mask and wafer is adjusted to 10 mm.
The darkness must be adjusted to 1/10,000th of a nua. Therefore, the sixth stage is used as a means for detecting the position of the stage.
As shown in the figure, in a fine movement XY-axis stage, a laser interferometric position measuring device 1 is attached to a plane mirror 2 that is linked to a stage movable section including a wafer chuck that holds a wafer 101.
A high-precision position detection method is used in which the position of the stage is detected by irradiating one norther beam 102 from 04 and using the interference of the reflected light.

第6図におい”こ、103はマスク、3はマスク103
を保持するマスクチャック(図示セず)固定用の固定台
である。
In Figure 6, 103 is a mask, 3 is a mask 103
This is a fixing base for fixing a mask chuck (not shown) that holds the mask.

〔発明が解決シフ、よ・うとする課題′jところが、こ
の干渉を利用した位置測定器はレーザバス側、が通過す
る経路(以下、レーザバスと略記)の気体の挑らぎや屈
折率の変化、気圧、温度、湿度等の影響を受けて測月値
が微妙に変化し、測長値Gご誤差を住j゛7るという欠
点がある。一方、特にSORを光源とする露光方式では
、マスクやウェハが大気中の酸素と反応してマスク白濁
を生ずる不都合を防ぐために、第6図に矢印線で示すよ
うに、HeやN2等の不活性ガスによってマスク。
[Problems that the invention attempts to solve']However, the position measuring device that uses this interference has problems with the gas, changes in the refractive index, and atmospheric pressure in the path that the laser bus passes through (hereinafter abbreviated as the laser bus). There is a drawback that the monthly value changes slightly due to the influence of temperature, humidity, etc., resulting in an error in the length measurement value G. On the other hand, especially in the exposure method using SOR as a light source, in order to prevent the inconvenience of the mask or wafer reacting with oxygen in the atmosphere and causing the mask to become cloudy, as shown by the arrow line in Fig. Masked by active gas.

ウェハを取り囲む露光雰囲気を満たす必要がある。It is necessary to fill the exposure atmosphere surrounding the wafer.

4はlie等の不活性ガスの吹き出し口である。4 is an inert gas outlet such as lie.

しかし1、この不活性ガスがレーザバス側に漏れると、
レーザの屈折率が変化し、測長誤差が飛躍的に大きくな
るという欠点を生じていた。
However, 1. If this inert gas leaks to the laser bus side,
This has the disadvantage that the refractive index of the laser changes and the length measurement error increases dramatically.

本発明は、レーザ干渉式位置測定器により常に正確なス
テージ位置を計測することのできる縦型ステッパを提供
することを目的としている。
An object of the present invention is to provide a vertical stepper that can always accurately measure the stage position using a laser interferometric position measuring device.

〔課題を解決するための手段〕[Means to solve the problem]

第1図を本発明の原理説明図で、図中、11は気体漏れ
遮断手段である。なお、従来と同様の構成部材には同符
号を用いている。
FIG. 1 is an explanatory diagram of the principle of the present invention, and in the figure, reference numeral 11 indicates gas leakage blocking means. Note that the same reference numerals are used for the same constituent members as in the prior art.

気体漏れ遮断手段11は、本図では、断面り形の円筒状
シール材で構成された例を示しており、該シール材は、
ウェハチャックを含むステージ可動部1と固定台3の間
を塞いでいる。
The gas leakage blocking means 11 is shown in this figure as an example composed of a cylindrical sealing material with a cross-sectional shape, and the sealing material is
The space between the stage movable part 1 including the wafer chuck and the fixed base 3 is closed.

〔作 用〕[For production]

露光に際しては、ウェハチャック1を位置決めして、8
亥つエハチャソクエ上のウェハ101をマスク103に
対向させ、第1図の右方からSORを照射してウェハ1
01上へのマスクパターンの露光を行う。
During exposure, position the wafer chuck 1 and
The wafer 101 on the wafer is placed opposite the mask 103, and the wafer 1 is irradiated with SOR from the right side of FIG.
A mask pattern is exposed onto the 01.

この作業時におけるウェハ101 (またはマスク10
3)の位置は、レーザ干渉式位置測定器からのレーザビ
ーム102により従来と同様に行われる。この場合、マ
スク103とウェハ101を取り囲む雰囲気中に充満す
る気体(不活性ガス)は気体漏れ遮断手段11により遮
断されてレーザバス側に漏れ出さない。従って、レーザ
バスが不活性ガスにより乱されることはなく、常に正確
なステージ位置計測を行うことが可能になる。
The wafer 101 (or mask 10
The positioning in step 3) is performed in the same manner as in the prior art using a laser beam 102 from a laser interferometric position measuring device. In this case, the gas (inert gas) filling the atmosphere surrounding the mask 103 and the wafer 101 is blocked by the gas leakage blocking means 11 and does not leak out to the laser bus side. Therefore, the laser bus is not disturbed by the inert gas, making it possible to always accurately measure the stage position.

〔実施例〕〔Example〕

以下、第2図及至第5図に関連して本発明の詳細な説明
する。なお、従来と同様の部材には同符号を用いている
The present invention will now be described in detail with reference to FIGS. 2 to 5. Note that the same reference numerals are used for members similar to those in the past.

第2図は以下に述べる各実施例に共通の縦型ステッパの
ステージ構成の概要を示すもので、ステージは、ウェハ
101をその面内方向に微動させる微動XY軸ステージ
12と、マスク103をその面外方向(ギャップ13σ
)方向)に微動させる微動ギャップ合わせ軸ステージ1
4とに大別される。微動XY軸ステージの可動部である
ウェハチャッークを含むステージ可動部1は1.微動x
Y軸ステージの固定部15に平行ばね16を介し支持さ
れ、直動のアクチュエータ(図示せず)により面内で変
位する構造となっている。ステージの位置は、ウェハチ
ャックを含むステージ可動部1に取り付けられたミラー
2にレーザ干渉式位置測定器からのレーザビームl[j
2を照射することにより、高精度で測定される。また、
微動XY軸ステージの固定部15は、真空吸着により、
微動ギヤツブ合わせ軸ステージ14の固定台、i 1.
’二吸着固定されている。“7スク103は、固定1’
93にグイ°アフラムばね18を介し7支持される7ブ
戸、り千ヤック17(微動ギャップ合わせ軸ヌテ・〜ジ
1.4の可動部に相当)Vこ真空吸着され、マス、’!
、l(’+3.ウェハ101間のギャップ量及び(櫓M
 +:5“j:、q、、(’ ((Pきを合わせる方向
に駆!Jされる。不活性ガフでちるHeは、下方の吹き
出し704から一定流量で吹き出され、平行ばね16や
ダイアフうムばね1Bの隙間を通って矢印線で示すよう
に流1れる。気体漏れ遮断手段のない第2図の状態では
、平行ばね16の隙間から漏れたHeは1ノ−ザビーム
102のビームパスに進入してレーザビーム102を乱
し、その測長精度が低下する。
FIG. 2 shows an outline of the stage configuration of a vertical stepper that is common to each of the embodiments described below. Out-of-plane direction (gap 13σ
) Direction) Fine movement gap alignment axis stage 1
It is broadly divided into 4. The stage movable part 1 including the wafer chuck which is the movable part of the fine movement XY axis stage is 1. Microtremor x
It is supported by a fixed part 15 of the Y-axis stage via a parallel spring 16, and is configured to be displaced within a plane by a linear actuator (not shown). The position of the stage is determined by a laser beam l[j
2, it can be measured with high accuracy. Also,
The fixed part 15 of the fine movement XY axis stage is fixed by vacuum suction.
Fixing base for fine movement gear knob alignment axis stage 14, i 1.
'Double adsorption is fixed. "7th screen 103 is fixed 1'
93 is supported via the aphram spring 18, and the 7-piece rack 17 (corresponding to the movable part of the micro-adjustment gap adjustment shaft nut 1.4) is vacuum-adsorbed, and the mass is vacuum-adsorbed.
, l('+3. Gap amount between wafers 101 and (turret M
+: 5 "j:, q, , (' ((P is driven in the direction of matching!J. He is blown out by the inert gaff at a constant flow rate from the lower air outlet 704, and the parallel spring 16 and diaphragm He flows through the gap between the wing springs 1B as shown by the arrow line.In the state shown in FIG. The laser beam enters and disturbs the laser beam 102, reducing its length measurement accuracy.

次にこの問題を解決する気体漏れ遮断手段を備えた各種
実施例を説明する。
Next, various embodiments equipped with gas leakage blocking means to solve this problem will be described.

第3図に第1の実施例を示す。FIG. 3 shows a first embodiment.

第3図は本例の縦型ステッパの要部構造説明図で、21
はOリング(気体漏れ遮断手段)である。
FIG. 3 is an explanatory diagram of the main part structure of the vertical stepper of this example, and is 21
is an O-ring (gas leakage blocking means).

Oリング2Jは、固定部15とウェハチャック】の間に
挿入され、これにより、少なくともレーザビーム側にば
Heが漏れない構造となっている。
The O-ring 2J is inserted between the fixing part 15 and the wafer chuck, thereby creating a structure that prevents He from leaking at least toward the laser beam side.

すなわち、本例によれば、1ノ・−ザバスが不活性ガス
により乱されろことはなく、常に正確なステージ位置計
測を行うことが可能になる。
That is, according to this example, the one-no-the-bath is not disturbed by the inert gas, making it possible to always accurately measure the stage position.

第4図に第2・7.)実施例を示す6 第4図は本例の縦型ステッ・マの要部措i;5説明図で
、31はラビリンスシール(気体漏れ遮断手段)である
。ラビリンスシール31は、周知の構造のもので、固定
部J5とウェハチャックを含むステージ可動部1にそれ
ぞれ設けられて微小間隙を介し噛み合う複数の突起32
.33により構成される。
Figure 4 shows numbers 2 and 7. ) Embodiment 6 FIG. 4 is an explanatory view of the main parts of the vertical stemmer of this example, and 31 is a labyrinth seal (gas leakage blocking means). The labyrinth seal 31 has a well-known structure, and includes a plurality of protrusions 32 that are provided on the fixed part J5 and the stage movable part 1 including the wafer chuck, respectively, and that engage with each other through minute gaps.
.. 33.

本例の場合は、前例の構造が接触式であり用途によって
は使用できない問題を解決することができ、レーザビー
・ム側に漏れるHsの量を最小限に抑えることが可能で
ある。但し、ラビリンスシールは非接式のシールである
ため、若干Heがレーザビーム側に漏れる懸念がある6 第5図に第3の実施例を示す。
In the case of this example, it is possible to solve the problem that the structure of the previous example is a contact type, which makes it unusable depending on the application, and it is possible to minimize the amount of Hs leaking to the laser beam side. However, since the labyrinth seal is a non-contact type seal, there is a concern that some He may leak to the laser beam side. A third embodiment is shown in FIG.

第5図は本例の縦型ステッパの要部構造説明図で、・1
1は気体漏れ遮断手段で上、る。気体漏れ遮断手段41
は、ウェハチャ・ツクを含むステージ可動部】に設けら
れたHe吸い込み口42と2該吸い込み口42と孔4;
3を介し連続する吸い込みバイブ44と、該吸い込みバ
イブ44と接続する図示しないブロア等の吸気源と7措
成される、レーザビーム側に漏れるHeはこの気体漏れ
遮断手段4】により全て吸い込まれ、レーザビーム側へ
のHeの漏れはなくなる。
Figure 5 is an explanatory diagram of the main part structure of the vertical stepper of this example.
1 is the gas leakage blocking means. Gas leakage blocking means 41
The He suction port 42 and the hole 4 provided in the stage movable part including the wafer chuck;
3, a suction vibrator 44 connected to the suction vibrator 44, and a suction source such as a blower (not shown) connected to the suction vibrator 44. All He leaking to the laser beam side is sucked by the gas leakage blocking means 4. Leakage of He to the laser beam side is eliminated.

本例の場合は、非接触式でありながら、Heの上方への
漏れをなくして第1の実施例と同様の効果を得ることが
できる。
In the case of this example, although it is a non-contact type, upward leakage of He can be eliminated and the same effect as the first example can be obtained.

〔発明の効果〕〔Effect of the invention〕

以上述べたように、本発明によれば、マスク。 As described above, according to the present invention, a mask is provided.

ウェハを取り囲む雰囲気に満たされたHe等の不活性ガ
スが、ステージの位置を計測しでいるレーザ干渉式位置
測定器のレーザビームバスに漏れるのを最小限に抑える
ことができるため、常に正確にステージ4;i置を計測
する。二とが可北’r’ニーなる。
It is possible to minimize the leakage of inert gas such as He that fills the atmosphere surrounding the wafer into the laser beam bus of the laser interferometric position measuring device that measures the stage position, ensuring accurate positioning at all times. Stage 4: Measure i position. Two and two are kahoku 'r' knees.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の原理説明図、 第2図は本発明の実施例の縦型ステッパのステージ構成
概要図、 第3図は本発明の第1の実施例の酪型ステッパの要部構
造説明図、 第4図は本発明の第2の実施例の定型ステッパの要部構
造説明図、 第5図は本発明の第3の実施例の縦型ステ、7パの要部
構造説明図、 第6図は従来の縦型ステッパの要部構造説明図で、 図中、 11は気体漏れ遮断手段、 101はウェハ、 103はマスクである。
Fig. 1 is a diagram explaining the principle of the present invention, Fig. 2 is a schematic diagram of the stage configuration of a vertical stepper according to an embodiment of the present invention, and Fig. 3 is a main structure of a dairy stepper according to a first embodiment of the present invention. Explanatory diagram, Fig. 4 is an explanatory diagram of the main part structure of a regular stepper according to the second embodiment of the present invention, and Fig. 5 is an explanatory diagram of the main part structure of a vertical stepper, 7 pax, according to the third embodiment of the present invention. FIG. 6 is an explanatory diagram of the main part structure of a conventional vertical stepper. In the figure, 11 is a gas leak blocking means, 101 is a wafer, and 103 is a mask.

Claims (1)

【特許請求の範囲】  マスク(103)上に描かれた回路パターンをウェハ
(101)上に露光、転写する際に用いられ、露光用光
源にシンクロトロン放射光を使用するとともに、前記マ
スク(103)と前記ウェハ(101)を取り囲む雰囲
気中に特定の気体を充満させる機構と、前記マスク(1
03)あるいは前記ウェハ(101)のいずれかの位置
を検出するレーザ干渉式位置測定器(104)とを備え
た縦型ステッパにおいて、 前記位置測定器(104)のレーザ光が通過する経路中
に前記特定の気体が漏れないようにするための気体漏れ
遮断手段(11)を設けたことを特徴とする縦型ステッ
パ。
[Scope of Claims] Used when exposing and transferring a circuit pattern drawn on a mask (103) onto a wafer (101), synchrotron radiation is used as an exposure light source, and the mask (103) ), a mechanism for filling a specific gas into the atmosphere surrounding the wafer (101), and a mechanism for filling the atmosphere surrounding the wafer (101) with a specific gas;
03) Or in a vertical stepper equipped with a laser interferometric position measuring device (104) that detects the position of any one of the wafers (101), in the path through which the laser beam of the position measuring device (104) passes. A vertical stepper characterized in that a gas leakage blocking means (11) is provided to prevent the specific gas from leaking.
JP2107648A 1990-04-25 1990-04-25 Vertical stepper Pending JPH047815A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2107648A JPH047815A (en) 1990-04-25 1990-04-25 Vertical stepper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2107648A JPH047815A (en) 1990-04-25 1990-04-25 Vertical stepper

Publications (1)

Publication Number Publication Date
JPH047815A true JPH047815A (en) 1992-01-13

Family

ID=14464517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2107648A Pending JPH047815A (en) 1990-04-25 1990-04-25 Vertical stepper

Country Status (1)

Country Link
JP (1) JPH047815A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2003030229A1 (en) * 2001-09-27 2005-01-20 株式会社ニコン Exposure apparatus and device manufacturing method
JP2007189073A (en) * 2006-01-13 2007-07-26 Nsk Ltd Exposure system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2003030229A1 (en) * 2001-09-27 2005-01-20 株式会社ニコン Exposure apparatus and device manufacturing method
JP2007189073A (en) * 2006-01-13 2007-07-26 Nsk Ltd Exposure system

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