JPH0478139A - Method for controlling temperature of radiation type substrate heating device - Google Patents
Method for controlling temperature of radiation type substrate heating deviceInfo
- Publication number
- JPH0478139A JPH0478139A JP19222890A JP19222890A JPH0478139A JP H0478139 A JPH0478139 A JP H0478139A JP 19222890 A JP19222890 A JP 19222890A JP 19222890 A JP19222890 A JP 19222890A JP H0478139 A JPH0478139 A JP H0478139A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- partition plates
- temperature
- cooling water
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 238000010438 heat treatment Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 14
- 230000005855 radiation Effects 0.000 title description 16
- 238000005192 partition Methods 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000498 cooling water Substances 0.000 abstract description 24
- 239000010453 quartz Substances 0.000 abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 238000001816 cooling Methods 0.000 abstract description 11
- 229910052736 halogen Inorganic materials 0.000 abstract description 11
- 150000002367 halogens Chemical class 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 239000003086 colorant Substances 0.000 abstract description 5
- 238000004040 coloring Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は熱処理すべき基板を熱源の輻射熱により加熱す
る輻射式基板加熱装置、さらに詳しくいえばVLSI製
造プロセスにおける熱処理工程等に好適に使用できる輻
射式基板加熱装置の温度制御方法に関する。Detailed Description of the Invention (Industrial Application Field) The present invention can be suitably used in a radiant substrate heating device that heats a substrate to be heat-treated using radiant heat from a heat source, and more specifically, in a heat treatment step in a VLSI manufacturing process. The present invention relates to a temperature control method for a radiant substrate heating device.
(従来の技術) 集積回路の製造プロセス中に成1m技術がある。(Conventional technology) There is a 1m technology during the manufacturing process of integrated circuits.
この成膜制御の信頼性を高めるため現在は基板を加熱す
る方式として輻射式基板加熱方式が一般に使用されてい
る。In order to improve the reliability of this film formation control, a radiation substrate heating method is currently generally used as a method for heating the substrate.
輻射式基板加熱方式は降温時は熱源自体の輻射を停止さ
せるとともに常圧の装置ではHe等の熱伝導の良好な媒
体を流して基板を直接冷却したり、減圧の装置では基板
の自然冷却によって冷却したりするものである。The radiation type substrate heating method stops the radiation of the heat source itself when the temperature drops, and in normal pressure equipment, cools the substrate directly by flowing a medium with good heat conduction such as He, and in the case of reduced pressure equipment, it cools the substrate naturally. It is used for cooling.
(発明が解決しようとする課題)
しかしながら、従来の装置では冷却のため熱源の輻射を
停止させても、熱源自体および熱源周囲が持つ余熱によ
る輻射があるため、基板温度の降温速度に限度があった
。(Problem to be Solved by the Invention) However, in conventional devices, even if the radiation of the heat source is stopped for cooling, there is a limit to the rate at which the substrate temperature can decrease because of the radiation due to the residual heat of the heat source itself and the surroundings of the heat source. Ta.
本発明の目的は輻射式基板加熱装置において、熱源およ
び熱源周囲の蓄熱部からの輻射量も制御して基板を高速
に冷却できる温度制御方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a temperature control method in a radiation type substrate heating apparatus that can cool a substrate at high speed by controlling the amount of radiation from a heat source and a heat storage section around the heat source.
(課題を解決するための手段)
前記目的を達成するために本発明による輻射式基板加熱
装置の温度制御方法は熱源と基板とを対向させ前記熱源
の輻射熱によって前記基板を加熱する輻射式基板加熱装
置の温度制御方法において、前記熱源と前記基板の間に
2枚の透明隔壁板を配置し、前記基板の昇温および一定
温度維持時、前記透明隔壁板の間に水を流し、前記基板
の降温時、前記透明隔壁板の間に着色した水または他の
媒質を流すように構成しである。(Means for Solving the Problems) In order to achieve the above object, a temperature control method for a radiant substrate heating device according to the present invention is a radiant substrate heating method in which a heat source and a substrate are opposed to each other and the substrate is heated by the radiant heat of the heat source. In the temperature control method for an apparatus, two transparent partition plates are arranged between the heat source and the substrate, and when the temperature of the substrate is raised and maintained at a constant temperature, water is flowed between the transparent partition plates, and when the temperature of the substrate is lowered. , configured to flow colored water or other medium between the transparent partition plates.
(作用)
このような構成によれば、基板は熱源からの輻射により
加熱されるが、昇温時は通常の透明の冷却水を隔壁板間
に流し、輻射エネルギーの損失を減少させ、降温時はヒ
ータへの通電を止め、着色した冷却水を流し、熱源およ
び熱源周辺部の熱容量による熱輻射の吸収効率を上げ、
基板への熱輻射量を低減でき、降温速度を上げることが
できる。(Function) According to this configuration, the substrate is heated by radiation from the heat source, but when the temperature rises, ordinary transparent cooling water is flowed between the partition plates to reduce the loss of radiant energy, and when the temperature falls, the substrate is heated by radiation from the heat source. turns off the power to the heater and flows colored cooling water to increase the absorption efficiency of heat radiation by the heat source and the heat capacity of the area around the heat source.
The amount of heat radiation to the substrate can be reduced and the rate of temperature drop can be increased.
(実施例) 以下、図面を参照して本発明をさらに詳しく説明する。(Example) Hereinafter, the present invention will be explained in more detail with reference to the drawings.
第1図は本発明による温度制御方法を適用した減圧ラン
プ式基板加熱装置の実施例を示す図で、同図fa)は正
面から見た概略断面図、同図OD)は第1図′(a)の
A−A断面図である。FIG. 1 is a diagram showing an embodiment of a reduced pressure lamp type substrate heating apparatus to which the temperature control method according to the present invention is applied. It is an AA sectional view of a).
実施例の容器外壁6は円筒形状をしており、内部は石英
の透明隔壁板2,3によってランプ室18と試料室19
に分けられている。The outer wall 6 of the container in this embodiment has a cylindrical shape, and the interior is divided into a lamp chamber 18 and a sample chamber 19 by transparent partition plates 2 and 3 made of quartz.
It is divided into
ランプ室11こは熱源であるハロゲンランプ1が配置さ
れている。A halogen lamp 1 serving as a heat source is arranged in a lamp chamber 11.
ハロゲンランプ1は電源14により通電制御される。The halogen lamp 1 is energized and controlled by a power source 14 .
試料室19には加熱対象であるシリコン基板4が配置さ
れている。シリコン基板4は石英サセプタ5によって支
持されている。試料室19は図示しない排気装置で真空
にされる。A silicon substrate 4 to be heated is placed in the sample chamber 19 . Silicon substrate 4 is supported by quartz susceptor 5. The sample chamber 19 is evacuated using an exhaust device (not shown).
ハロゲンランプ1とシリコン基板4は石英の透明隔壁板
2,3を挟んで対向した位置関係である。The halogen lamp 1 and the silicon substrate 4 are in a positional relationship facing each other with transparent partition plates 2 and 3 of quartz interposed therebetween.
容器外壁6には冷却用バイブ7が設置され、この冷却用
パイプ7に図示しない冷却水循環系から冷却水が供給さ
れる。A cooling vibrator 7 is installed on the outer wall 6 of the container, and cooling water is supplied to the cooling pipe 7 from a cooling water circulation system (not shown).
この冷却用パイプ7は容器の昇温を防止するためのもの
である。This cooling pipe 7 is for preventing the temperature of the container from rising.
容器外壁6aと石英の透明隔壁板2との間および容器外
壁6bと石英の透明隔壁板3との間にはそれぞれOリン
グ13aおよび13bが挿入され、ランプ室18および
試料室19は大気より完全に遮断されている。O-rings 13a and 13b are inserted between the container outer wall 6a and the quartz transparent partition plate 2 and between the container outer wall 6b and the quartz transparent partition plate 3, respectively, so that the lamp chamber 18 and the sample chamber 19 are completely isolated from the atmosphere. is blocked by.
石英の透明隔壁板2と3の間は冷却水の流路になってお
り、その一端は冷却水供給系20に接続され、他端は図
示しない排水系に接続されている。A cooling water flow path is formed between the quartz transparent partition plates 2 and 3, one end of which is connected to a cooling water supply system 20, and the other end connected to a drainage system (not shown).
冷却水供給系20は2系統から構成されている。The cooling water supply system 20 is composed of two systems.
1系統は冷却水23がバルブ16.バイブ21およびバ
ルブ8を経由して石英の透明隔壁板2,3間の流路に接
続されるルートである。In one system, the cooling water 23 is connected to the valve 16. This route is connected to the flow path between the transparent quartz partition plates 2 and 3 via the vibrator 21 and the valve 8.
他の1系統は冷却水23がバルブ17.バイブ22およ
びバルブ9を経由して石英の透明隔壁板2゜3間の流路
に接続されるルートである。In the other system, the cooling water 23 is connected to the valve 17. This route is connected to the flow path between the quartz transparent partition plates 2.3 via the vibrator 22 and the valve 9.
このルートのバイブ22の中間部にはタンク15に繋が
るバイブ24のノズル11が挿入されている。The nozzle 11 of the vibrator 24 connected to the tank 15 is inserted into the middle part of the vibrator 22 along this route.
タンク15ムこは着色剤が充虜されており、バルブ10
を開くことにより冷却水を着色できる。Tank 15 is filled with colorant, and valve 10
Cooling water can be colored by opening it.
各系統の選択はバルブ8.9.16および17の開閉に
よって行うことができる。Selection of each system can be made by opening and closing valves 8.9.16 and 17.
ハロゲンランプlの輻射熱は石英の透明隔壁板2.3と
その間に流れる冷却水を透過してシリコン基板4に達す
る。The radiant heat of the halogen lamp l passes through the quartz transparent partition plate 2.3 and the cooling water flowing between them and reaches the silicon substrate 4.
基板を加熱する場合は、バルブ8,16を開いて冷却水
を流し、ハロゲンランプ1を点灯する。When heating the substrate, the valves 8 and 16 are opened to allow cooling water to flow, and the halogen lamp 1 is turned on.
透明石英板2,3および冷却水を透過することによる熱
エネルギーの損失は極わずかで基板は急速に加熱される
。The loss of thermal energy due to transmission through the transparent quartz plates 2 and 3 and the cooling water is extremely small, and the substrate is rapidly heated.
基板温度を降温する場合は、ハロゲンランプ1を消灯す
る。しかし、ハロゲンランプlおよびその周辺部の蓄熱
部からの熱放射は依然として続く。When lowering the substrate temperature, the halogen lamp 1 is turned off. However, heat radiation from the halogen lamp l and the heat storage section around it still continues.
そこでバルブ8および16を閉じ、バルブ9および17
を開き、さらに着色バルブ1oを開く。Then valves 8 and 16 are closed and valves 9 and 17 are closed.
, and then open the coloring valve 1o.
これによりノズル11からは着色剤がバイブ22に流れ
込み、着色した冷却水が石英の透明隔壁板2.3の間の
流路を流れランプ室18から試料室19に輻射する熱を
吸収するので試料室19への熱の輻射を防止できる。As a result, the coloring agent flows from the nozzle 11 into the vibrator 22, and the colored cooling water flows through the channel between the quartz transparent partition plates 2.3 and absorbs the heat radiated from the lamp chamber 18 to the sample chamber 19, so that the sample can be sampled. Heat radiation to the chamber 19 can be prevented.
第2図は第1図の装置によって加熱冷却を行った場合の
基板温度と時間との関係を示すグラフである。FIG. 2 is a graph showing the relationship between substrate temperature and time when heating and cooling are performed using the apparatus shown in FIG.
基板温度は1050”Cまで上げ、その温度を3分間保
持した後、降温させたものである。The substrate temperature was raised to 1050''C, held at that temperature for 3 minutes, and then lowered.
昇温時および一定温度維持時には冷却水は着色すること
なく流した。When the temperature was raised and when the temperature was maintained constant, the cooling water flowed without coloring.
降温時はハロゲンランプ1への通電を止め、冷却水に着
色剤を添加した。着色剤は墨である。When the temperature was lowered, the halogen lamp 1 was turned off and a coloring agent was added to the cooling water. The colorant is ink.
基板は抵抗率0.001Ω1以下のシリコン基板を用い
、基板温度はW / Re熱電対をシリコン基板に埋め
込み測定した。A silicon substrate with a resistivity of 0.001Ω1 or less was used as the substrate, and the substrate temperature was measured by embedding a W/Re thermocouple in the silicon substrate.
曲線31は昇温5隆温時ともに透明の冷却水を流した場
合を、曲線32は昇温時には透明の冷却水を、降温時に
冷却水を着色した場合をそれぞれ示している。Curve 31 shows the case where transparent cooling water is flowed during both the five temperature rises, and the curve 32 shows the case where transparent cooling water is used when the temperature is rising and the cooling water is colored when the temperature is falling.
両者を比較すると、ともに昇温、降温後シリコン基板温
度が安定するまでの時間が同しであるが、降温時は明ら
かな相違が認められる。Comparing the two, it is found that the time required for the silicon substrate temperature to stabilize after the temperature rise and fall is the same in both cases, but there is a clear difference when the temperature falls.
着色した冷却水を用いた場合、降温速度が速くなること
が明らかである。It is clear that when colored cooling water is used, the temperature decrease rate becomes faster.
これはランプ室18例のM熱部からの熱の流入が十分に
遮られた結果、基板の冷却効率が上がったと思料できる
。This can be considered to be due to the fact that the inflow of heat from the M heat section of the 18 lamp chambers was sufficiently blocked, resulting in an increase in the cooling efficiency of the substrate.
以上、減圧式の基板加熱装置の実施例について説明した
が、他の形式の輻射式基板加熱装置、例えば常圧式等の
基板加熱装置でも通用でき同様の効果を得ることができ
る。Although the embodiments of the reduced pressure type substrate heating apparatus have been described above, other types of radiation type substrate heating apparatuses, such as normal pressure type substrate heating apparatuses, can also be used and similar effects can be obtained.
(発明の効果)
以上、説明したように本発明による温度制御方法を輻射
式の基板加熱装置に適用すれば、降温時に基板への熱輻
射量を著しく減少させることができるので、基板の降温
速度を向上させることができるという効果がある。(Effects of the Invention) As explained above, if the temperature control method according to the present invention is applied to a radiation-type substrate heating device, the amount of heat radiation to the substrate during temperature reduction can be significantly reduced, so the temperature reduction rate of the substrate can be reduced. It has the effect of being able to improve the
第1図(a)は本発明による温度制御方法を適用した減
圧ランプ式基板加熱装置の実施例を示す概略断面図、第
1図山)は第1図(a)のA−A断面図である。第2図
は降温時着色した水と着色していない水を流したときの
基板温度と時間の関係を示すグラフである。
1・・・ハロゲンランプ
2.3・・・石英の透明隔壁板
4・・・シリコン基板
5・・・石英サセプタ
6・・・容器外壁
7・・・冷却用パイプ
8.9.10,16.17・・・バルブ11・・・ノズ
ル
12・・・冷却水
13・・・0リング
14・・・電源
特許出願人 日電アネルバ株式会社
代理人 弁理士 井ノロ 壽Fig. 1(a) is a schematic sectional view showing an embodiment of a reduced pressure lamp type substrate heating apparatus to which the temperature control method according to the present invention is applied, and Fig. 1(a) is a sectional view taken along line A-A in Fig. 1(a). be. FIG. 2 is a graph showing the relationship between substrate temperature and time when colored water and non-colored water are flowed during cooling. 1...Halogen lamp 2.3...Quartz transparent partition plate 4...Silicon substrate 5...Quartz susceptor 6...Container outer wall 7...Cooling pipe 8.9.10,16. 17...Valve 11...Nozzle 12...Cooling water 13...0 ring 14...Power supply patent applicant Nichiden Anelva Co., Ltd. Agent Patent attorney Hisashi Inoro
Claims (1)
基板を加熱する輻射式基板加熱装置の温度制御方法にお
いて、前記熱源と前記基板の間に2枚の透明隔壁板を配
置し、前記基板の昇温および一定温度維持時、前記透明
隔壁板の間に水を流し、前記基板の降温時、前記透明隔
壁板の間に着色した水または他の媒質を流すようにした
ことを特徴とする輻射式基板加熱装置の温度制御方法。In a temperature control method for a radiant substrate heating device, in which a heat source and a substrate are opposed to each other and the substrate is heated by radiant heat from the heat source, two transparent partition plates are disposed between the heat source and the substrate, and the substrate is heated. A radiant substrate heating device characterized in that water is flowed between the transparent partition plates when the temperature is maintained at a constant temperature, and colored water or other medium is flowed between the transparent partition plates when the temperature of the substrate is lowered. Temperature control method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19222890A JP2927903B2 (en) | 1990-07-20 | 1990-07-20 | Temperature control method of radiation type substrate heating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19222890A JP2927903B2 (en) | 1990-07-20 | 1990-07-20 | Temperature control method of radiation type substrate heating device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0478139A true JPH0478139A (en) | 1992-03-12 |
JP2927903B2 JP2927903B2 (en) | 1999-07-28 |
Family
ID=16287796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19222890A Expired - Fee Related JP2927903B2 (en) | 1990-07-20 | 1990-07-20 | Temperature control method of radiation type substrate heating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2927903B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09326365A (en) * | 1996-06-04 | 1997-12-16 | Nippon Pillar Packing Co Ltd | Vertical heat treatment equipment |
-
1990
- 1990-07-20 JP JP19222890A patent/JP2927903B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09326365A (en) * | 1996-06-04 | 1997-12-16 | Nippon Pillar Packing Co Ltd | Vertical heat treatment equipment |
Also Published As
Publication number | Publication date |
---|---|
JP2927903B2 (en) | 1999-07-28 |
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